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Supplier: Newark, An Avnet Company
Description: MOSFET/IGBT DRIVER, HIGH/LOW SIDE, SOIC; No. of Channels:2Channels; Driver Configuration:High Side and Low Side; Power Switch Type:IGBT, MOSFET; No. of Pins:14Pins; IC Case / Package:SOIC; Input Type:Inverting; Source Current:400mA RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: MOSFET DRIVER, FULL REEL; No. of Channels:2Channels; Driver Configuration:High Side and Low Side; Power Switch Type:MOSFET; No. of Pins:8Pins; IC Case / Package:SOIC; Input Type:Non-Inverting; Source Current:1.25A; Sink Current:2A RoHS Compliant: Yes
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Supplier: Infineon Technologies AG
Description: IRF630N | N-Channel Power MOSFET IPD33CN10N G | N-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IRFP90N20D | N-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IRL530NS | N-Channel Power MOSFET IRL540N
- rDS(on): 0.58 ohms
- TJ: 175 C
- VGS(off): -4 to -2 volts
- Features: MOSFET, Other, Power MOSFET
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Supplier: Newark, An Avnet Company
Description: MOSFET DRIVER, SOIC-8; No. of Channels:2Channels; Driver Configuration:Low Side; Power Switch Type:MOSFET; No. of Pins:8Pins; IC Case / Package:SOIC; Input Type:Non-Inverting; Source Current:3A; Sink Current:3A; Input Delay:-; MSL:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: MOSFET DRIVER, SOT-23; No. of Channels:1Channels; Driver Configuration:Low Side; Power Switch Type:MOSFET; No. of Pins:5Pins; IC Case / Package:SOT-23; Input Type:Inverting, Non-Inverting; Source Current:3A; Sink Current:3A; MSL:- RoHS Compliant: Yes
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Supplier: Infineon Technologies AG
Description: IRFS3006 | N-Channel Power MOSFET IRFS3206 | N-Channel Power MOSFET IPD33CN10N G | N-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IRFP90N20D | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET
- Peak Output Current: 2.5 amps
- Supply Voltage: 10 to 20 volts
- Propagation Delay: 94 ns
- Driver Type: High-side Gate Driver, Low-side Gate Driver
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Supplier: Win Source Electronics
Description: Manufacturer: Texas Instruments Win Source Part Number: 1111558-TPS2811P Packaging: Tube/Rail Mounting: Through Hole Channel Type: Synchronous Input Type: Inverting Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel, P-Channel
- Peak Output Current: 2 amps
- Supply Voltage: 4 to 14 volts
- Rise Time: 14 ns
- Fall Time: 15 ns
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Supplier: Win Source Electronics
Description: Manufacturer: Texas Instruments Win Source Part Number: 1115977-UCC37325P Packaging: Tube/Rail Mounting: Through Hole Channel Type: Independent Input Type: Inverting, Non-Inverting Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel,
- Peak Output Current: 4 amps
- Supply Voltage: 4.5 to 15 volts
- Rise Time: 20 ns
- Fall Time: 15 ns
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Supplier: Win Source Electronics
Description: Manufacturer: Texas Instruments Win Source Part Number: 033775-TPS2813P Packaging: Tube/Rail Mounting: Through Hole Channel Type: Synchronous Input Type: Inverting, Non-Inverting Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel,
- Peak Output Current: 2 amps
- Supply Voltage: 4 to 14 volts
- Rise Time: 14 ns
- Fall Time: 15 ns
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1095248-SN75372P Category: Integrated Circuits (ICs)>PMIC - Gate Drivers Package: Tube Standard Package: 50 Channel Type: Synchronous Input Type: Inverting Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel
- Peak Output Current: 0.5 amps
- Supply Voltage: 4.75 to 24 volts
- Operating Temperature: 0 to 70 C
- Package Type: DIP
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 3A. Search-friendly keywords include gate driver IC, MOSFET driver, IGBT driver, power switching, 100V, 3A, Gate
- Peak Output Current: 4 amps
- Operating Temperature: -40 to 165 C
- Number of Outputs: 1
- Driver Type: Dual Gate Driver (Half-bridge)
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Supplier: Microchip Technology, Inc.
Description: MD1822 is a high speed, four channel MOSFET driver designed to drive high voltage P- and N-channel MOSFETs for medical ultrasound applications and other applications requiring a high output current for a capacitive load. The high-speed input stage of the
- Features: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 4A. Search-friendly keywords include gate driver IC, MOSFET driver, IGBT driver, power switching, Dual, 4A,
- Supply Voltage: 12 volts
- Fall Time: 40 ns
- Number of Outputs: 2
- Features: Other
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Supplier: Nexperia B.V.
Description: P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD
- V(BR)DSS: -20 volts
- IDSS: -2,900 milliamps
- VGS(off): 0.68 volts
- rDS(on): 0.11 ohms
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Supplier: Nexperia B.V.
Description: P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD
- V(BR)DSS: -12 volts
- IDSS: -3,200 milliamps
- VGS(off): 0.68 volts
- rDS(on): 0.098 ohms
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Supplier: Richardson RFPD
Description: Gate driver 2DMBxxxxxCC is a dual channel gate driver designed for IGBT and SiC MOSFET. The high breakdown voltage and low parasitic capacitance make it suitable for gate drives such as SiC MOSFET and IGBT. Features Ideal for drive of IGBT and
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 2A, 14V. Search-friendly keywords include gate driver IC, MOSFET driver, IGBT driver, power switching, Dual, 2A, 14V,
- Supply Voltage: 4 to 14 volts
- Fall Time: 35 ns
- Number of Outputs: 2
- Features: Other
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Supplier: Microchip Technology, Inc.
Description: MD1821 is a high speed, four channel MOSFET driver designed to drive high voltage P- and N-channel MOSFETs for medical ultrasound applications and other applications requiring a high output current for a capacitive load. The high-speed input stage of the
- Features: MOSFET
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Supplier: Littelfuse, Inc.
Description: Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables
- Features: Other
- Polarity: P-Channel
- Package Type: TO-247
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Supplier: Littelfuse, Inc.
Description: Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables
- Features: Other
- Polarity: P-Channel
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Supplier: Nexperia B.V.
Description: P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 1.8 V RDSon rated for Low Voltage Gate Drive AEC-Q101 qualified Trench MOSFET
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
- Package Type: SOT23
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Supplier: Nexperia B.V.
Description: The NGD4300 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply
- IC Package Type: Other
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Supplier: Wolfspeed
Description: Wolfspeed’s CGD15HB62P1 is a two-channel gate driver for 1200V SiC MOSFET power modules. Each of the two gate drive channels is protected by a desaturation circuit. In the event of a short circuit, the voltage across the MOSFET (VDS) rises until it
- Category: Development Board
- Supported System: Power
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Supplier: Richardson RFPD
Description: Wolfspeed’s CGD1200HB2P is a form-factor-fitting, two-channel gate driver for the BM2 power module platform. Each of the two gate drive channels is protected against over-current and reverse polarity. On-board 2 W isolated power supplies supporting 75 kHz switching
- Category: Development Board
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Supplier: Microchip Technology, Inc.
Description: The MD1716 is a three channel logic controller circuit with 12 low impedance MOSFET gate drivers. There are three sets of control logic inputs, one each for channels A, B and C. Each channel consists of two pairs of MOSFET gate drivers.
- Output Voltage: 3.6 volts
- Features: Other
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Supplier: Microchip Technology, Inc.
Description: The MD1715 is a two channel logic controller circuit with 12 low impedance MOSFET gate drivers. There are two sets of control logic inputs, one each for channels A and B. Each channel consists of three pairs of MOSFET gate drivers. These
- Output Voltage: 3.6 volts
- Features: Other
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Supplier: Renesas Electronics Corporation
Description: The ISL95808 is a high frequency, dual MOSFET driver with low shutdown current, optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. It is especially suited for mobile computing applications that require high efficiency and
- Production Status: Full Production
- Features: Other
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Supplier: Renesas Electronics Corporation
Description: The ISL6605 is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. This driver combined with an Intersil HIP63xx or ISL65xx Multiphase Buck PWM controller forms a complete single-stage
- Features: Other
- Package Type: SOIC / SOP
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Supplier: Renesas Electronics Corporation
Description: The ISL6208 and ISL6208B are high frequency, dual MOSFET drivers, optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. They are especially suited for mobile computing applications that require high efficiency and excellent
- Features: Other
- Package Type: SOIC / SOP
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Supplier: Infineon Technologies AG
Description: MOSFET BSZ013NE2LS5I | N-Channel Power MOSFET BSC014N04LSI | N-Channel Power MOSFET 2EDF7275K | Gate driver ICs BSC074N15NS5 | N-Channel Power MOSFET 2EDN7524G | Gate driver ICs BSS138W | Small signal/small power
- Internal RAM Size: 128 KB
- Supply Voltage (Vcc): 1.7 to 3.6 volts
- Number of A/D Converters: 2
- Pin Count: 52
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Supplier: Infineon Technologies AG
Description: (continuous conduction mode) ICs IRS44273L | Gate driver ICs IRS2982S | AC-DC LED Driver IC ICE2HS01G | Half-bridge and LLC controller IPP60R080P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDL23N06PJ | Gate driver ICs IDH06G65C6 | CoolSiC™ Schottky
- Output Current: 5 milliamps
- Form Factor: Integrated Circuit (IC)
- Features: RoHS Compliant
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Supplier: TRINAMIC Motion Control GmbH & Co. KG.
Description: The TMC34NP-PSO is a miniature N & P channel MOSFET complementary pair, ideally suited for motor drive applications. It perfectly complements the TMC239A-LA / TMC249A-LA stepper motor drivers, in order to build a 4A stepper motor driver the size of a stamp. The
- Features: MOSFET
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controllers, gate drivers, MOSFETs and motors to be used. In addition, each board provides convenient test points for power, motor drive, and sensing signals to aid with development and testing with Nexperia’s LFPAK56 MOSFET family. The motor controller board is designed for the Leonardo R3 and Nucleo development board form factors. (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Looking for a reliable MOSFET for efficient power and load management? The FDS6681Z N-channel MOSFET is designed for low- to (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
Optimized layout for multi-SiC MOSFET and diode chips assembly in phase leg topology Symmetrical design to accept up to 12 SiC MOSFET chips in parallel per switch All die in parallel with their own gate series resistor for homogenous current balancing High (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
Infineon Technologies BSS138NH6327XTSA2 Overview N-Channel MOSFET: Suitable for various applications requiring efficient power switching. 60V Drain-Source Breakdown Voltage: Capable of handling high voltages (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
The ALD1105 by Advanced Linear Devices is engineered for precision and performance. It combines the power of an N-channel MOSFET with a P-channel MOSFET in a single package. The transistor pair is matched for minimum offset voltage and differential thermal (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD310702 from Advanced Linear Devices is a monolithic quad P-channel MOSFET array with unrivaled precision in temperature tracking and simplified bias circuitry. The matched pair circuit is designed for the next generation of products requiring extremely low (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
its Si82Ex/Fx value and performance isolated gate drivers for silicon MOSFET, IGBT, SiC and GaN devices. Skyworks Solutions, Inc. provides an upgrade path for its Si823x (read more)
Browse LED Drivers Datasheets for Skyworks Solutions, Inc. -
The onsemi NTTFD1D8N02P1E is a high-performance, dual N-channel power MOSFET designed to deliver superior efficiency and compactness for a wide range of applications. Featuring a small footprint of just 3.3 mm x 3.3 mm, this MOSFET is ideal for space (read more)
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Dual High-Side/Low-Side Drive: Supports N-channel MOSFETs and IGBTs in complex bridge topologies with 11V–14V gate drive voltage (read more)
Browse Gate Drivers Datasheets for Win Source Electronics -
STMicroelectronics' STDRIVEG600 is a single-chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFETs. The high-side section is designed to stand a voltage up to 600 V. It is suitable for applications with bus voltage up to 500 V. The STDRIVEG600 can (read more)
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Page 2. Semiconductor parts with 832 in root number
P - Channel MOSFET With Gate Driver for Load Switch Application .
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Page 4. Semiconductor parts with 321 in root number
P - Channel MOSFET With Gate Driver for Load Switch Application .
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A Command and Data Handling unit for pico-satellite missions
The FDR8521L p - channel MOSFET with Gate Driver for Load Switch Application was selected as a physical switching network in the design of the Power Unit for the satellite [14].
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Battery management system with active inrush current control for Li-ion battery in light electric vehicles
The costs of the gate drive cir- cuits for both types of MOSFETs are relatively comparable because the gate driver for the P - channel MOSFET in our design has no galvanic separation and is the same simple as the gate driver for…
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Practical and cost-efficient design of fingerprint recognition system based on DSP
While the voltage on SENSE is higher than VIN + 20mV (VFR), the GATE pin is pulled up by Linear Gate Driver and the P - channel MOSFET path connected with batteries is turned off.
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CR4 - Thread: DC DC Converter
We also added an inverting level-shifting gate - driver for a proper P - channel MOSFET buck switch.
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Extended Temperature Fusion Family of Mixed Signal FPGAs
Features and Benefits
Designed to work with external p - or n- channel MOSFETs , the Gate driver is a configurable current sink or source and requires an external pull-up or pull-down resistor.
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Power booster audio amplifier
As a proof of concept, portable 5V PBA was built utilizing the electrolytic bridge capacitor C = 4 7 0 p , N-channel MOSFET SI4936DY as M1, P - channel MOSFET NDS8947 as M2, TC4427 gate driver , LT1016 comparator, TLC274 operational amplifier and passive…
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Fusion Family of Mixed Signal FPGAs
Designed to work with external p - or n- channel MOSFETs , the Gate driver is a configurable current sink or source and requires an external pull-up or pull-down resistor.
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Design of Low-Cost Address Energy Recovery Circuit of AC-PDP With Load-Adaptive Characteristics
Moreover, the proposed circuit, employing a p - channel MOSFET which does not require a complex floating gate driver , can be implemented with low cost.