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Supplier: Infineon Technologies AG
Description: | N-Channel Power MOSFET IR2110S | Gate driver ICs IR2112S | Gate driver ICs IRF630N | N-Channel Power MOSFET IRF530NS | N-Channel Power MOSFET IRF3415S | N-Channel Power MOSFET IRF7490 | N-Channel Power
- Package Type: TO-263, Other
- Packing Method: Tape Reel, Other
- Polarity: P-Channel, Other
- TJ: 150 C
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1095248-SN75372P Category: Integrated Circuits (ICs)>PMIC - Gate Drivers Package: Tube Standard Package: 50 Channel Type: Synchronous Input Type: Inverting Driven Configuration: Low-Side Number of Drivers: 2 Gate Type:
- Driver Type: Low-side Gate Driver
- IC Package Type: DIP
- Operating Temperature: 0.0 to 70 C
- Peak Output Current: 0.5000 amps
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Supplier: Infineon Technologies AG
Description: DPS368 | Pressure sensors for IoT BSS123N | Small signal/small power MOSFET IPD11DP10NM | P-Channel Power MOSFET IPD80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BAS70-04 | Schottky Diodes 1EDN8511B | Gate
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
- Polarity: P-Channel, Other
- TJ: 150 C
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Supplier: Infineon Technologies AG
Description: with IRF530NS | N-Channel Power MOSFET IRF3415S | N-Channel Power MOSFET IRF7490 | N-Channel Power MOSFET IPD33CN10N G | N-Channel Power MOSFET IRL530NS | N-Channel Power MOSFET IR2110S | Gate driver ICs
- Package Type: TO-251 / TO-252, Other
- Packing Method: Shipping Tube / Stick Magazine, Other
- Polarity: P-Channel, Other
- TJ: 175 C
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Supplier: Infineon Technologies AG
Description: IRFP90N20D | N-Channel Power MOSFET IR2110S | Gate driver ICs IR2112S | Gate driver ICs IRF530NS | N-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IRF3415S | N-Channel Power MOSFET IRF7490 | N-Channel
- Package Type: TO-220, Other
- Packing Method: Shipping Tube / Stick Magazine, Other
- Polarity: P-Channel, Other
- TJ: 175 C
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Supplier: Win Source Electronics
Description: Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.5A, 1.5A Rise / Fall Time (Typ): 25ns, 33ns Voltage - Supply: 4.5V ~ 30V Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC
- Driver Type: High-side Gate Driver, Low-side Gate Driver
- Fall Time: 33 ns
- IC Package Type: SOIC
- Operating Temperature: -40 to 150 C
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Supplier: Win Source Electronics
Description: Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.5A, 1.5A Rise / Fall Time (Typ): 19ns, 19ns Voltage - Supply: 4.5V ~ 18V Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package:
- Driver Type: Low-side Gate Driver
- Fall Time: 19 ns
- IC Package Type: SSOP
- Operating Temperature: -40 to 85 C
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Supplier: Win Source Electronics
Description: -Side Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.5A, 1.5A Rise / Fall Time (Typ): 10ns, 8ns Voltage - Supply: 4.5V ~ 30V Package / Case: 8-VDFN Exposed Pad Supplier Device
- Driver Type: Low-side Gate Driver
- Fall Time: 8 ns
- Operating Temperature: -55 to 150 C
- Output Configuration: Noninverting
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Supplier: Microchip Technology, Inc.
Description: MD1822 is a high speed, four channel MOSFET driver designed to drive high voltage P- and N-channel MOSFETs for medical ultrasound applications and other applications requiring a high output current for a capacitive load. The high-speed input stage of the
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: . The MD1715 is a two channel logic controller circuit with 12 low impedance MOSFET gate drivers. There are two sets of control logic inputs, one each for channels A and B. Each channel consists of three pairs of MOSFET gate drivers.
- IC Package Type: Other
- Output Voltage: 3.6 volts
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Supplier: Nexperia B.V.
Description: P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD
- Package Type: Other
- Polarity: P-Channel
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: Dual Channel SiC MOSFET Driver Gate Driver for 1200V SiC MOSFET Power Module Features 2 output channels Integrated isolated power supply Direct mount low inductance design Short circuit protection Under voltage protection
- IC Package Type: Other
- Peak Output Current: 9 amps
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Supplier: Littelfuse, Inc.
Description: Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables
- Package Type: Other
- Polarity: P-Channel
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Supplier: Nexperia B.V.
Description: The NGD4300-Q100 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap
- Package Type: Other
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Supplier: Renesas Electronics Corporation
Description: The ISL95808 is a high frequency, dual MOSFET driver with low shutdown current, optimized to drive two N-Channel power MOSFETs in a synchronous-rectifie d buck converter topology. It is especially suited for mobile computing applications that require high efficiency and
- IC Package Type: Other
- Production Status: Full Production
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Supplier: Richardson RFPD
Description: Six Channel SiC MOSFET Driver Gate Driver for 1200V SiC MOSFET Power Module Features 6 output channels Isolated power supply Direct mount low inductance design Short circuit protection Over temperature protection Under voltage
- Category: Development Board
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Supplier: Renesas Electronics Corporation
Description: 3000pF load with a low propagation delay and less than 10ns transition time. This product implements bootstrapping on the upper gate with an internal bootstrap Schottky diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective
- IC Package Type: SOIC / SOP, Other
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Supplier: Wolfspeed
Description: Wolfspeed’s CGD15HB62P1 is a two-channel gate driver for 1200V SiC MOSFET power modules. Each of the two gate drive channels is protected by a desaturation circuit. In the event of a short circuit, the voltage across the MOSFET (VDS) rises
- Category: Development Board
- Supported System: Power
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Supplier: RS Components, Ltd.
Description: The SiC530 is an integrated MOSFET power stage optimised for synchronous buck converter applications. Thermally enhanced PowerPAK package. Advanced MOSFET gate driver is incorporated. High efficiency performance. High frequency operation up to 2 MHz. Power ON reset. 5
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: TRINAMIC Motion Control GmbH & Co. KG.
Description: The TMC34NP-PSO is a miniature N & P channel MOSFET complementary pair, ideally suited for motor drive applications. It perfectly complements the TMC239A-LA / TMC249A-LA stepper motor drivers, in order to build a 4A stepper motor driver the size of a stamp. The
- Transistor Type: MOSFET
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Supplier: RS Components, Ltd.
Description: Linear Technologys MOSFET (FET) drivers provide a straight forward way to drive single, dual, triple or quad N-Channel and P-Channel FETs. Wide Input range of operation. Extended Temperature range of operation. Powerful gate drive. Short circuit protection Number
- Device Type / Applications: Other
- IC Package Type: SOIC
- Pin Count: 8 #
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Supplier: RS Components, Ltd.
Description: Linear Technologys MOSFET (FET) drivers provide a straight forward way to drive single, dual, triple or quad N-Channel and P-Channel FETs. Wide Input range of operation. Extended Temperature range of operation. Powerful gate drive. Short circuit protection Mounting
- IC Package Type: Other
- Operating Temperature: -40 to 85 C
- Regulator Category: Other
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Supplier: RS Components, Ltd.
Description: isolated and protected from high voltages. Mounting Type = Surface Mount Output Device = IGBT Gate Drive, MOSFET Maximum Forward Voltage = 1.95V Number of Channels = 1 Number of Pins = 8 Package Type = DIP Input Current Type = DC Typical Rise Time = 500ns Maximum Input Current =
- Isolation Voltage: 5000 volts
- Mounting Option: Surface Mount, Other
- Optocoupler Input: DC
- Optocoupler Output: Other
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Supplier: Microchip Technology, Inc.
Description: The dsPIC33EDV64MC205 System in Package (SiP) combines a 70 MIPS dsPIC® DSC core with a 12-volt 3-phase MOSFET Gate Driver. This SiP is designed for high-performance, precision motor control systems that require a compact size. Its idea for control of brushless DC
- Clock Speed: 70 MHz
- Data Bus: 16-Bit
- Interfaces: I²C
- MIPS: 70
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controllers, gate drivers, MOSFETs and motors to be used. In addition, each board provides convenient test points for power, motor drive, and sensing signals to aid with development and testing with Nexperia’s LFPAK56 MOSFET family. The motor controller board is designed for the Leonardo R3 and Nucleo development board form factors. (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Looking for a reliable MOSFET for efficient power and load management? The FDS6681Z N-channel MOSFET is designed for low- to (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
Optimized layout for multi-SiC MOSFET and diode chips assembly in phase leg topology Symmetrical design to accept up to 12 SiC MOSFET chips in parallel per switch All die in parallel with their own gate series resistor for homogenous current balancing High (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
Infineon Technologies BSS138NH6327XTSA2 Overview N-Channel MOSFET: Suitable for various applications requiring efficient power switching. 60V Drain-Source Breakdown Voltage: Capable of handling high voltages (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
The ALD1105 by Advanced Linear Devices is engineered for precision and performance. It combines the power of an N-channel MOSFET with a P-channel MOSFET in a single package. The transistor pair is matched for minimum offset voltage and differential thermal (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD310702 from Advanced Linear Devices is a monolithic quad P-channel MOSFET array with unrivaled precision in temperature tracking and simplified bias circuitry. The matched pair circuit is designed for the next generation of products requiring extremely low (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
its Si82Ex/Fx value and performance isolated gate drivers for silicon MOSFET, IGBT, SiC and GaN devices. Skyworks Solutions, Inc. provides an upgrade path for its Si823x (read more)
Browse LED Drivers Datasheets for Skyworks Solutions, Inc. -
The onsemi NTTFD1D8N02P1E is a high-performance, dual N-channel power MOSFET designed to deliver superior efficiency and compactness for a wide range of applications. Featuring a small footprint of just 3.3 mm x 3.3 mm, this MOSFET is ideal for space (read more)
Browse Power Supplies Datasheets for DigiKey -
Dual High-Side/Low-Side Drive: Supports N-channel MOSFETs and IGBTs in complex bridge topologies with 11V–14V gate drive voltage (read more)
Browse Gate Drivers Datasheets for Win Source Electronics -
STMicroelectronics' STDRIVEG600 is a single-chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFETs. The high-side section is designed to stand a voltage up to 600 V. It is suitable for applications with bus voltage up to 500 V. The STDRIVEG600 can (read more)
Browse Gate Drivers Datasheets for DigiKey
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Page 2. Semiconductor parts with 832 in root number
P - Channel MOSFET With Gate Driver for Load Switch Application .
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Page 4. Semiconductor parts with 321 in root number
P - Channel MOSFET With Gate Driver for Load Switch Application .
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A Command and Data Handling unit for pico-satellite missions
The FDR8521L p - channel MOSFET with Gate Driver for Load Switch Application was selected as a physical switching network in the design of the Power Unit for the satellite [14].
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Battery management system with active inrush current control for Li-ion battery in light electric vehicles
The costs of the gate drive cir- cuits for both types of MOSFETs are relatively comparable because the gate driver for the P - channel MOSFET in our design has no galvanic separation and is the same simple as the gate driver for…
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Practical and cost-efficient design of fingerprint recognition system based on DSP
While the voltage on SENSE is higher than VIN + 20mV (VFR), the GATE pin is pulled up by Linear Gate Driver and the P - channel MOSFET path connected with batteries is turned off.
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CR4 - Thread: DC DC Converter
We also added an inverting level-shifting gate - driver for a proper P - channel MOSFET buck switch.
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Extended Temperature Fusion Family of Mixed Signal FPGAs
Features and Benefits
Designed to work with external p - or n- channel MOSFETs , the Gate driver is a configurable current sink or source and requires an external pull-up or pull-down resistor.
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Power booster audio amplifier
As a proof of concept, portable 5V PBA was built utilizing the electrolytic bridge capacitor C = 4 7 0 p , N-channel MOSFET SI4936DY as M1, P - channel MOSFET NDS8947 as M2, TC4427 gate driver , LT1016 comparator, TLC274 operational amplifier and passive…
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Fusion Family of Mixed Signal FPGAs
Designed to work with external p - or n- channel MOSFETs , the Gate driver is a configurable current sink or source and requires an external pull-up or pull-down resistor.
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Design of Low-Cost Address Energy Recovery Circuit of AC-PDP With Load-Adaptive Characteristics
Moreover, the proposed circuit, employing a p - channel MOSFET which does not require a complex floating gate driver , can be implemented with low cost.