Plasma Etcher

Description: Windows are chamber lids designed to transmit RF (radio frequency) and microwave energy into the plasma etch chamber while resisting erosion from the harsh plasma etch environment. An effective window has a low loss tangent (high transmittance) across RF and microwave frequencies.

• Features: Alumina / Aluminum Oxide, Carbide Materials, Specialty Ceramic
• Specialty Ceramic Type: Aluminum Nitride, Silicon Carbide, Yttria
• Applications: Chemical / Materials Processing
• Shape / Form: Fabricated / Custom Shape

Description: Based on our popular BT-1, it shares the same robust and reliable characteristics while providing yet another example of Plasma Etch surface modification innovation. The large all aluminum chamber accommodates a generously sized circular, rotating active processing surface has the option of

• Features: Automated Loading, Gas Control Unit, Integral Process Controller, Other
• Materials Processed: Compound Semiconductors / GaAs, Metal, Tungsten / Refractory Metal
• Type: Factory / Free Standing
• Vacuum / Pressure Range: Medium (< 1, >10-3 torr)

Description: CoorsTek advanced, high-purity ceramic components are built to withstand the extreme environments in plasma etch (or "dry" etch) chambers — including vapor phase chemical etchants, high voltage RF (radio frequency) and microwave plasma, volatile byproducts, and aggressive cleaning

• Features: Alumina / Aluminum Oxide, Carbide Materials, Specialty Ceramic
• Specialty Ceramic Type: Aluminum Nitride, Silicon Carbide, Yttria
• Applications: Chemical / Materials Processing
• Shape / Form: Fabricated / Custom Shape

Description: components are built to withstand the extreme environments in plasma etch (or "dry" etch) chambers — including vapor phase chemical etchants, high voltage RF (radio frequency) and microwave plasma, volatile byproducts, and aggressive cleaning cycles. EXAMPLE ETCH PROCESS MATERIALS

• Features: Alumina / Aluminum Oxide, Carbide Materials, Specialty Ceramic
• Specialty Ceramic Type: Aluminum Nitride, Silicon Carbide, Yttria
• Applications: Chemical / Materials Processing
• Shape / Form: Fabricated / Custom Shape

Description: The K1050X is a modern, solid-state RF plasma barrel reactor designed to meet the requirements of research and development and small-scale production for a wide and varied range of plasma etching, plasma ashing and plasma cleaning applications. Key Features * Drawer type

• Reactor Design: Other Reactor Design

Description: Ceramic Focus Ring for Plasma Etch Equipment When aluminum alloy is selected as the chamber material of the etcher, it is easy to cause metal particle pollution. Instead, a dense anodic aluminum oxide layer is coated on the aluminum alloy to improve the corrosion resistance of the

Description: Built as an extension of our MK-II platform, it offers you the same repeatability, reliability and long life, as well as low maintenance costs. The Reactive Ion Etch (RIE) electrode offers the highest directional plasma effect. Etching with our roll to roll plasma etcher in the

• Materials Processed: Compound Semiconductors / GaAs, Metal, Tungsten / Refractory Metal
• Features: Gas Control Unit, Integral Process Controller, Other
• Vacuum / Pressure Range: Medium (< 1, >10-3 torr)
• Process: Plasma Etching / Cleaning

Description: First-of-its-kind design uses microwave oven to generate plasma cleaning medium Safely removes organic and many inorganic contaminants from a wide range of components and substrates Maintains low processing temperatures (25-200°C controllable) Produces higher plasma power and densities

• Temperature: 392 F
• Internal Length: 9 inch
• Internal Width: 7 inch
• Internal Depth / Height: 3 inch

Description: support these next-generation processes. The 9000 platform incorporates HHT’s new microwave ECR(Electron Cyclotron Resonance) plasma etching chamber that is proven in high volume manufacturing usage.

• Applications: Etching - Plasma / Wet
• Mounting / Loading: Floor Mounted / Stand-alone

Description: Plasma) etch system provides superior performance in profile control as well as in higher etching rate and selectivity compared to conventional ion-milling processes. Applicable wafer diameter 150mm, 200mm

• Applications: Etching - Plasma / Wet
• Mounting / Loading: Floor Mounted / Stand-alone

Description: loss in volume production. Non-Volatile Materials Etch System E-600/8000 Series: the EMCP (Electro Magnetically Coupled Plasma) offers an outstanding solution to this problem ensuring constant high performance even for non-volatile material etch.

• Applications: Etching - Plasma / Wet
• Mounting / Loading: Floor Mounted / Stand-alone

Description: Our welded aluminum vacuum chamber encloses a generous 500 square inches of active plasma processing surface. Surface modification with Plasma Etch yields increased bond strength and cleanliness of most any surface material.

• Materials Processed: Compound Semiconductors / GaAs, Metal, Tungsten / Refractory Metal
• Features: Gas Control Unit, Integral Process Controller, Other
• Type: Laboratory / Benchtop
• Vacuum / Pressure Range: Medium (< 1, >10-3 torr)

Description: Litmas is an all-in-one remote plasma source combining the power supply, LitmasMatch™ matching network, and plasma chamber into one compact chassis. Small-footprint point-of-use abatement solution Highly reliable, effective abatement with minimum utilities usage Lower cost of ownership

• Type: RF Plasma (ICP)
• Materials / Substrates: Semiconductors / Wafers
• Features: Specialty / Other

Description: As in all Plasma Etch systems a capacitive parallel plate design is used for the most effective plasma generation. Competitive units with glass/quartz barrel chambers cannot penetrate the vacuum containment vessel and therefore are restricted to inductive coupling using an RF coil

• Materials Processed: Compound Semiconductors / GaAs, Metal, Tungsten / Refractory Metal
• Features: Integral Process Controller, MEMS, Medical, Other, Photovoltaic / Solar, Research / Surface Analysis, Semiconductor Manufacturing
• Type: Laboratory / Benchtop
• Vacuum / Pressure Range: Medium (< 1, >10-3 torr)

Description: Litmas is an all-in-one remote plasma source combining the power supply, LitmasMatch™ matching network, and plasma chamber into one compact chassis. Small-footprint point-of-use abatement solution Highly reliable, effective abatement with minimum utilities usage Lower cost of ownership

Description: Emerald green industrial plating tape for disposition, plasma, lamination, alkaline, etch, photo develop with great chemical resistance. Features/Applications: disposition plasma lamination alkeline etch photo develop

• Adhesive: Silicone
• Features: Single-Sided Adhesive

Description: proven RF amplifier technology. Applications: The CLB series is designed to meet the performance demand in RF-driven plasma systems for semiconductor processing. Applications include etch, RIE, parallel plate, ICP, RF sputtering, CVD and PVD, as well as induction and dielectric heating

• Type: Plasma Power Supply

Description: Proven Reliability in Plasma Vacuum Systems Worldwide Performance: The CLX series low frequency RF power supplies are available in power ranges from 600 to 10,000 Watts with fixed frequencies from 20 kHz to 2 MHz, and frequency agile capability up to 10% bandwidth. The CLX 1250 provides 1250

• AC Input Voltage: 185 to 480 volts
• Output Frequency: 2 to 30 MHz
• Number of Outputs: 1 #
• DC Output Voltage: -5 to 10 volts

Description: Proven Reliability in Plasma Vacuum Systems Worldwide Performance: The CX series power supplies start at power ranges from 600 to 2500 Watts with fixed frequencies from 2 MHz to 30 MHz, and frequency agile capability up to 10% bandwidth. The solid-state design provides low cost of ownership

• AC Input Voltage: 115 to 480 volts
• Input Frequency: 50 to 60 Hz
• Output Frequency: 2 to 30 MHz
• Number of Outputs: 1 #

Description: Stable, Reliable, Low Frequency Power for Industrial Heating and Plasma Processing Applications Performance: The CLF series generators provide stable process power up to 5 kW. The CLF 500 provides 500 watts of power. The half-rack supplies operate at any fixed frequency from 20 to 50 kHz. In

• AC Input Voltage: 100 to 239 volts
• Input Frequency: 50 to 60 Hz
• Output Frequency: 0.02 to 0.05 MHz
• Number of Outputs: 1 #

Description: Thermoplastics with built-in release properties for use as etch mask for pattern transfer and the fabrication of nanopatterns Excellent properties for thermal NIL Longer life-time of anti-sticking layers on the mold High plasma etch resistance

• Applications: Electronics / Microelectronics
• Thick Film Type: Resistor

Description: Semitron® MPR 1000 shapes possess excellent heat resistance and low rates of erosion in plasma chambers. Due to these characteristics, it is often chosen for vacuum chamber applications within etch, CVD, and ion implant sub segmentations in the semiconductor and electronics industry.

• Tensile Strength (Break): 15,000 psi
• Tensile Modulus: 1,000 ksi
• Use Temperature: 500 F
• Industry: Electronics, Semiconductors / ICs

Description: plasma etch equipment, primarily in the etch chamber. The rings are strategically positioned to optimize plasma distribution and maintain uniformity during the etching process. Semiconductor manufacturing processes demand operation within cleanroom environments, especially for

• Features: Alumina / Aluminum Oxide, Specialty Ceramic

Description: General Digital offers optical bonding and optical film laminating services to enhance the optical performance of an LCD, OLED or Plasma display. Optically bonding an LCD, OLED or Plasma display improves both optical performance and durability. Optical Bonding is the affixing of two

• Coating: Antireflection, Filter, ITO, Protective
• Materials: Glass, Polymer
• Wavelength Range: IR, Visible
• Features: North America, Northeast US Only, Other, United States Only

Description: modes • Programmed for Lam Research analog and (single channel, single channel dual output or dual output Master/Slave) Applied Materials CHX plasma etcher interfaces

• Cooling Capacity: 1.2 kW
• Process Flow: 4 GPM
• Process Pressure: 33 psi
• Operating Temperature: 14 to 176 F

Description: from elastomer seals and ultra-low permeation rates. Key Material Attributes: Ultra pure with extremely low trace metal contaminants which may cause electrical yield problems. Excellent plasma resistance – ideal for most plasma chemistries except high F-radical processes. Plasma

• O-ring Size: "AS568" standard sizes (001-475), "AS568-" boss gasket sizes (901- and up), British Standard metric sizes, JIS standard sizes
• O-ring Hardness (Durometer): 65 durometer, 70 durometer, 75 durometer, 80 durometer
• Synthetic Rubbers: Fluoroelastomer (FKM), Perfluoroelastomer (FFKM, FFPM)

Description: from elastomer seals and ultra-low permeation rates. Key Material Attributes: Ultra pure with extremely low trace metal contaminants which may cause electrical yield problems. Excellent plasma resistance – ideal for most plasma chemistries except high F-radical processes. Plasma

• O-ring Size: "AS568" standard sizes (001-475), "AS568-" boss gasket sizes (901- and up), British Standard metric sizes
• O-ring Hardness (Durometer): 65 durometer, 70 durometer, 75 durometer, 80 durometer
• Synthetic Rubbers: Fluoroelastomer (FKM), Perfluoroelastomer (FFKM, FFPM)

Description: Nanofluor® Y75G is a highly fluorinated elastomer which incorporates relatively low levels of an advanced nanoparticle type filler system, producing a clean compound formulated for minimum particle generation. Nanofluor® Y75G has been tested in various plasma types and sources and benchmarked

Description: KMPR® 1000 develops in standard aqueous TMAH developers and can be removed more easily after fabrication compared to traditional epoxy resists. Available in five viscosities, KMPR® 1000 enables single‑coat thicknesses from 4–110 μm. With excellent adhesion, as well as strong chemical and

• Applications: Electronics / Microelectronics
• Thick Film Type: Resistor

Description: Gardacid P 4462/1 is a liquid sulfuric acidic pickling product used to remove laser and plasma cutting scale and rust from ferrous substrates. Gardacid P 4462/1 can also be used to clean and etch aluminum substrates. A fluoride additive is sometimes used with aluminum. The carefully balanced

• Type: Etchant / Pickle, Rust / Corrosion Remover, Strong Acid / Mineral Acid Cleaner (0 to 2 pH), Surface Treatment

Description: to 2MHz High voltage pulsed DC AM transmitters Plasma deposition/etch Series Gate Resistance (Rg) <0.1 ohm Tr and Tf times of <10ns Industry's Lowest Gate Charge Fast switching, uniform signal propagation Pulse power applications Fast switching, reduced gate drive power

Description: throughput pumps incorporating a hybrid pumping mechanism for higher gas flow. These are optimized for processes such as plasma etch. We also offer repair service.

Description: extract. Other instruments of equivalent sensitivity, such as inductively-coupled plasma/mass spectrometry, may be used. 1.7 The detection limit and method variation depend on the efficiency of the acid extraction procedure, sample size, the method interferences, the absorption spectrum of

Description: graphite furnace atomic-absorption spectroscopy to analyze trace metals content of the acid extract. Other instruments of equivalent sensitivity, such as inductively-coupled plasma/mass spectrometry, may be used. 1.7 The detection limit and method variation depend on the efficiency of the