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Supplier: Richardson RFPD
Description: The CHA2098b is a high gain broadband three-stage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The
- Frequency Range: 20,000 to 40,000 MHz
- Maximum Gain: 19 dB
- Output Power( P1dB): 16 dBm
- Noise Figure: 10 dB
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Supplier: Broadcom Inc.
Description: The MGA-565P8 is buffer amplifier designed for use in LO chains to drive high dynamic range passive mixers with consistent high Psat of 20dBm with 0dBm input power, isolation of 42dB and small signal gain of 22dB gain, ideal for use as a buffer amplifier in
- Frequency Range: 3,500 MHz
- Minimum Gain: 22 dB
- Maximum Gain: 22 dB
- Input VSWR: 2 :1
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Supplier: Win Source Electronics
Description: Rejection Ratio: 65 dB Number of Amplifiers: 1 Categories: Linear - Amplifiers - Instrumentation,OP Amps,Buffer Amps Case / Package: SOT-25 Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Mount: Surface Mount RoHS: Compliant Radiation
- Input Offset Voltage (VOS): 7 millivolts
- Gain-Bandwidth Product (GBW): 1 MHz
- Slew Rate (SR): 0.4 V/µs
- Bandwidth: 1 MHz
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 010793-BA4558RF-E2 Packaging: Reel - TR Number of Circuits: 2 Mounting: SMD (SMT) Amplifier Type: General Purpose Slew Rate: 1 V/μs Current - Input Bias: 60nA Voltage - Input Offset: 500μV Categories: Integrated Circuits Status: Active
- Supply Voltage (VS): 8 to 30 volts
- Supply Current (IS): 3 milliamps
- Input Offset Voltage (VOS): 0.5 millivolts
- Input Bias Current (IBIAS): 0.06 µA
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 010795-BA4560RF-E2 Packaging: Reel - TR Number of Circuits: 2 Mounting: SMD (SMT) Amplifier Type: General Purpose Slew Rate: 4 V/μs Current - Input Bias: 50nA Voltage - Input Offset: 500μV Categories: Integrated Circuits Status: Active
- Supply Voltage (VS): 8 to 30 volts
- Supply Current (IS): 3 milliamps
- Input Offset Voltage (VOS): 0.5 millivolts
- Input Bias Current (IBIAS): 0.05 µA
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 010797-BA4580RF-E2 Packaging: Reel - TR Number of Circuits: 2 Mounting: SMD (SMT) Amplifier Type: General Purpose Slew Rate: 5 V/μs Current - Input Bias: 100nA Voltage - Input Offset: 300μV Family Name: BA4580 Categories: Integrated
- Supply Voltage (VS): 4 to 32 volts
- Supply Current (IS): 6 milliamps
- Input Offset Voltage (VOS): 0.3 millivolts
- Input Bias Current (IBIAS): 0.1 µA
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Supplier: Lingto Electronic Limited
Description: IC OPAMP GP 2 CIRCUIT 8SOP
- Supply Current (IS): 6 milliamps
- Features: Instrumentation Amplifiers, Other
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Supplier: Radwell International
Description: (PRICE/TC),OP-AMP, 1MHZ, 7V/US, SOIC-8, NO. OF AMPLIFIERS:2 AMPLIFIER, BANDWIDTH:16MHZ, SLEW RATE:7V/µS, SUPPLY VOLTAGE RANGE:± 5V TO ± 18V, AMPLIFIER CASE STYLE:SOIC, NO. OF PINS:8PINS, OPERATING TEMPERATURE MIN:-40°C, OPERATING TEMPERATURE ROHS COMPLIAN. FREE 2 YEAR RADWELL
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Supplier: Quarktwin Technology Ltd.
Description: RF Amplifier IC VSAT 3.5GHz ~ 7GHz CR-3
- Features: Other
- Standards and Certifications: RoHS Compliant
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include op amp, operational amplifier, buffer amplifier, current sense, Dual, Operational Amplifier IC, Unclassified. This
- Features: Operational Amplifiers
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include op amp, operational amplifier, buffer amplifier, current sense,
- Supply Voltage (VS): 4 volts
- Slew Rate (SR): 3 V/µs
- Bandwidth: 6 MHz
- Operating Temperature: -40 C
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Supplier: Richardson RFPD
Description: buffer amplifier where high gain, excellent linearity and low power consumption are important. Because of its wide bandwidth, the MAAM28000 can be used in numerous commercial and government system applications, such as satellite communications, RLL, EW and radar. The MAAM280001 is
- Frequency Range: 2,000 to 8,000 MHz
- Maximum Gain: 18 dB
- Output Power( P1dB): 14 dBm
- Noise Figure: 6 dB
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Supplier: Acme Chip Technology Co., Limited
Description: AUDIO DIGITAL AMPLIFIER
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include Rf Amplifier, RF Amplifiers, electronic component, datasheet,
- Features: Other
- Standards: RoHS Compliant
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Supplier: Quarktwin Technology Ltd.
Description: General Purpose Amplifier 2 Circuit 8-SOP
- Supply Current (IS): 3 milliamps
- Input Offset Voltage (VOS): 0.5 millivolts
- Input Bias Current (IBIAS): 0.05 µA
- Gain-Bandwidth Product (GBW): 4 MHz
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Supplier: VAST STOCK CO., LIMITED
Description: Operational Amplifiers - Op Amps ICs, Amplifiers & Linear, Operational Amplifiers, Low Noise, Dual Supply Voltage
- Features: Operational Amplifiers, Other
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Description: MMIC,BUFFER AMP,PKG, QFN 16L (3X
- Frequency Range: 10,000 to 21,000 MHz
- Minimum Gain: 17 dB
- Maximum Gain: 17 dB
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: RF Amplifier 40-1000MHz Gain 24dB NF 2.5dB GaAs Product overview: S10040240P from Qorvo is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing
- Supply Voltage (VS): 24 volts
- Features: Other
- Standards: RoHS Compliant
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Supplier: DigiKey
Description: General Purpose Amplifier 2 Circuit 8-SOP
- Supply Current (IS): 3 milliamps
- Slew Rate (SR): 1 V/µs
- Operating Temperature: -40 to 105 C
- Features: Buffer, Instrumentation Amplifiers, Operational Amplifiers, Other
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Supplier: Richardson RFPD
Description: multiplier and buffer, and a wide dynamic range power detector on the output. The module is ideally suited for low to high capacity, high power E-band point to point radios. Each device is 100% RF tested to ensure performance compliance.
- Noise Figure: 16 dB
- Features: Other
- Applications: Terrestrial RF/Microwave Systems
- Converter Type: Upconverter
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOIC-8 Low Noise Amplifiers (LNA) - RF ROHS
- Standards and Certifications: RoHS Compliant
- Package Type: SOIC
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Supplier: ODG (Origin Data Global)
Description: MMIC,BUFFER AMP,PKG, QFN 16L (3X
- Features: Other
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Supplier: ODG (Origin Data Global)
Description: IC OPAMP GP 2 CIRCUIT 8SOP
- Supply Voltage (VS): 8 volts
- Input Offset Voltage (VOS): 0.5 millivolts
- Input Bias Current (IBIAS): 0.06 µA
- Gain-Bandwidth Product (GBW): 2 MHz
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Supplier: Broadcom Inc.
Description: The ADA-4643 is a general purpose Silicon Bipolar Darlington Amplifier housed in an industry standard SOT-343 (4-lead SC70) package. The device is a current driven amplifier that operates on a single current supply. It also exhibits flat gain, high linearity and unconditional
- Frequency Range: 2,500 MHz
- Minimum Gain: 15.5 dB
- Maximum Gain: 17.5 dB
- Output Power( P1dB): 14.700000000000006 dBm
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Supplier: ValueTronics International, Inc.
Description: The 461A is an Amplifier from HP. Amplify RF and Microwave signals to measure, test, and design circuits. Applications include radio communications, cellphones, EMI testing, and much more. Features: Frequency response is +/- 1dB. 40dB or 20dB gain Gain at 500 kHz: 40dB or 20dB gain Max
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Features: Operational Amplifiers
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Supplier: Infineon Technologies AG
Description: mA bias current at VCC = 3 V - Typical supply voltage: 2.5 to 5.0 V - SIEGET®-25 technology - Pb-free (RoHS compliant) package Target Applications: - Buffer amplifier - LNAs - Oscillator active devices
- Frequency Range: 3,000 MHz
- Minimum Gain: 23 dB
- Maximum Gain: 23 dB
- Noise Figure: 1.3 dB
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Supplier: Rochester Electronics
Description: 500 MHz to 1700 MHz, Dual-Balanced Mixer, LO Buffer, IF Amplifier, and RF BALUN
- Features: Buffer, Other
- RoHS Compliant: RoHS Compliant
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Supplier: Marki Microwave LLC
Description: The ADM-5974CH is a broadband, moisture resistant MMIC LO buffer amplifier. The ADM-5974 provides efficient, optimized LO drive to all Marki mixers in band with no required negative bias or sequencing. It is built with a moisture resistant pHEMT process to allow the bare chip to pass
- Frequency Range: 0 to 35,000 MHz
- Features: Other
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Supplier: Mini-Circuits
Description: Mini-Circuits ZVM-273HP+ is a three stage balanced, wideband coaxial amplifier delivering up to 0.5W power and operating over 13 to 26.5 GHz. It is unconditionally stable. Its outstanding isolation enables it to be used as a wideband isolation amplifier or buffer
- Minimum Operating Voltage: 14 volts
- Maximum Operating Voltage: 14 volts
- Nominal Impedance: 50 Ohms
- Package Type: Connectorized
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Supplier: Qorvo
Description: Qorvo's QPA9501 is high power amplifier module containing an internally matched 3-stage PA, compensated DC biasing circuit and output power detector. This PA module is optimized for the WiFi bands from 5.1-5.9GHz and hence well suited for LTE-U applications. It provides high gain (32 dB) and
- Frequency Range: 5,100 to 5,900 MHz
- Minimum Gain: 32 dB
- Maximum Gain: 32 dB
- Output Power( P1dB): 33 dBm
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Supplier: Marki Microwave LLC
Description: The A-3567UC is a broadband MMIC LO buffer amplifier that is capable of producing at least +18 dBm up to 67 GHz. This amplifier can be used to drive L- or H-diode mixers from 35-67 GHz, or L- or H-diode IQ mixers from 35-60 GHz. It also has built-in DC blocking capacitors on the
- Frequency Range: 30,000 to 67,000 MHz
- Package Type: Connectorized
- Features: Other
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Supplier: Renesas Electronics Corporation
Description: HA-2520, HA-2522, HA-2525 comprise a series of operational amplifiers delivering an unsurpassed combination of specifications for slew rate, bandwidth and settling time. These dielectrically isolated amplifiers are controlled at closed loop gains greater than 3 without external
- Supply Voltage (VS): 16 to 36 volts
- Supply Current (IS): 4 milliamps
- Input Offset Voltage (VOS): 10 millivolts
- Input Bias Current (IBIAS): 0.125 to 0.25 µA
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Supplier: Renesas Electronics Corporation
Description: The EL5166 and EL5167 amplifiers are of the current feedback variety and exhibit a very high bandwidth of 1.4GHz at AsubV/sub = +1 and 800MHz at AsubV/sub = +2. This makes these amplifiers ideal for today's high speed video and monitor applications, as well as a number of RF and
- Operating Range: Industrial
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. Countering UAS (C-UAS) consists of three subsystems: detecting, identifying, and defeating the UAS drone threat. Defeating the drone(s) requires either a kinetic response, directed energy response or an electromagnetic response. Empower RF Systems amplifiers are used in the defeat role of drone (read more)
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Amphenol RF offers safe and sustainable industrial-plating options with enhanced durability for a variety of harsh environments. These robust connectors and adapters are available in environmentally friendly, chromium-free tin-nickel plating for settings with extreme exposure (read more)
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controlled RF power amplifier ideal for ISM band and industrial wireless communication. With excellent small-signal gain of 32 dB and superior noise performance, it supports reliable mid-power amplification with flexible output control (read more)
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Implementation of RF design can be challenging and can often require fine-tuning and adjustments to achieve optimal performance. Design changes can lead to costly redesign or requalification. By extending the life of RF and Microwave ADI components, customers in long-lifecycle applications (read more)
Browse RF Amplifiers Datasheets for Rochester Electronics -
Package At Reference: 6 V / 70 mA / 5 GHz: - Gain: 13.5 dB - OIP3: 30 dBm - OP1dB: 16.5 dBm - Evaluation Board Noise Figure: 4.2 dB APPLICATIONS - Microwave Backhaul - C-Band Amplifiers - X-Band Amplifiers - Instrumentation (read more)
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available RF Power Amplifier product portfolio for wireless infrastructure that spans multiple levels of integration, including; discrete transistors, multistage IC’s, and multi-chip modules (MCM), as well as leveraging GaN and Silicon LDMOS from the latest cutting edge NXP fabs (read more)
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Family of RF Power Macro GaN Transistors from NXP (read more)
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Empower RF Systems released a high-performance X-Band pulsed power amplifier module for new Radar applications where portability and extended range are a key requirement.
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The ADM-8536PSM is the world's smallest 2-20 GHz high linearity, low noise amplifier solution, featuring 10.5 dB gain, +25 dBm OIP3 and 2.5 dB noise figure that makes it suitable for use in RF front ends. The amplifier is designed for ease of use due to its internal bias network, DC blocking and RF matching, while its compact 1.3 x 2 mm DFN package and low power consumption make it an ideal choice for low SWaP applications. (read more)
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Packaged, Integrated 32 to 40 GHz Millimeter-Wave Up-Converter
The up-converter comprises an LO chain, a pair of mixers in quadrature, and a RF buffer amplifier .
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Design of broadband, highly integrated, 20-30 GHz and 35-45 GHz MMIC up-converters
Fig. 11. shows that 25 dB of dynamic range is obtained by varying the gate bias of the up-converter’s RF buffer amplifier .
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X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology
operation, a balanced upconverter and an RF buffer amplifier for transmitter operation, and an LO buffer amplifier with switching hnction on a 2.3 x 2.3 mm chip; it offers 20 dB receiver gain and 13 dB transmitter gain.
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X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology
operation, a balanced upconverter and an RF buffer amplifier for transmitter operation, and an LO buffer amplifier with switching function on a 2.3 x 2.3 mm chip; it offers 20 dB receiver gain and 13 dE3 transmitter gain.
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Complete Wireless Design > Oscillator Design
If the oscillator’s output power is decreased too far, we can follow the pad by using a (preferably) high isolation 50-Ω RF buffer amplifier .
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http://focus.ti.com/lit/ds/symlink/trf6900a.pdf
RF Buffer Amplifier .
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Wireless strain and temperature measurement with radio telemetry
Fig. 2--Improved dynamic-strain transmitter with voltage regulator and RF buffer amplifier .
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A sensitive nuclear quadrupole resonance spectrometer for 2-60 MHz
Figure 8 shows the complete circuit including the varicap (BB105)bandspread circuit, the RF buffer amplifier Ts (BFX89). .
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Double-balanced, hybrid mixer with multi-decade bandwidth
RF buffer amplifiers have been added to the design.
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A high quality GaAs IC tuner for TV/VCR receivers
Figure 7 shows the mixer which has double balanced FETs ( Q l - Q b ) , a dif- ferential RF buffer amplifier (Q5,&6), a switching circuit (Q7), and an UHF buffer amplifier (Q8).
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