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Supplier: Accuris
Description: Standard Guide for Application of Silicon Standard Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of Silicon
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Supplier: ASTM International
Description: 1.2 This guide has not been evaluated for application to electronic materials other than silicon. 1.3 The guide covers the selection of materials for resistivity reference wafers, procedures for preparing and calibrating resistivity reference wafers, and use of resistivity
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Supplier: ASTM International
Description: This standard was transferred to SEMI (www.semi.org) May 2003 1.1 This guide defines standardized positions for measuring diameter of circular wafers of silicon and other semiconducting materials that contain flats or notches on the periphery. It was developed for use with
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Supplier: ASTM International
Description: resistivity reference wafers, and use of resistivity reference wafers in qualifying, calibrating, and controlling various types of resistivity instrumentation. 1.4 The guide provides criteria for selection of instruments for determining the resistivity of silicon
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Supplier: Daitron Co., Ltd.
Description: The wafer edge grinders are designed to grind edge and circumference of a wide variety of wafers including silicon, compound semiconductors, such as, SiC, GaN, GaAs, and InP, oxide wafers, such as sapphire, quartz, LT, and LN, and glass, at high precision through
- Maximum Wafer / Part Size: 50.799972568014816 to 203.19989027205926 mm
- Mounting / Loading: Floor Mounted / Stand-alone
- Form Factor: Monitor / Instrument
- Applications: Semiconductor Wafers
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Description: Pyrometer with fiber optics for non-contact measurements on silicon wafers, e. g. in vacuum chambers with temperature ranges between 400 and 1600 °C. Key Features Very short response time below 1 ms Extremely short spot sizes, min. 0.45 mm Built-in LC display Laser targeting light
- Temperature Range: 752 to 2,912 F
- Response Time: 1 to 10,000 milliseconds
- Electrical Output: Current
- Features: Laser Spot Aiming / Sighting
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Supplier: Rigaku Corporation
Description: Rigaku's WaferX 300 represents the culmination of 25 years of experience in the X-ray fluorescence analysis of thin films on silicon wafers. Specifically developed as an in-process metrology tool, the system incorporates "bridge tool" technology — servicing 6", 8", as well as the
- Maximum Wafer / Part Size: 150.00000000000003 to 300.00000000000006 mm
- Measurements: Composition, Thickness - Film / Layer
- Mounting / Loading: Floor Mounted / Stand-alone
- Form Factor: Monitor / Instrument
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Supplier: ASTM International
Description: source. 1.2 This test method can be used for both n-type and p-type silicon. 1.3 This test method can be used to detect surface elemental contamination that is within the analyte depth of approximately 5 nm for highly mirror-polished silicon wafers. The analytic depth increases
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Supplier: StellarNet, Inc.
Description: optical measurement requirements. Thin Film Applications Solar PV Increased production of Thin-Film Photovoltaics (TFPVs) is becoming more predominant due to lower costs than their silicon-wafer-based cousins. Getting accurate thickness measurement is extremely crucial to efficiency
- Applications: CVD / PVD Films, Polishing / CMP, Polymers / Photoresists, Semiconductor Wafers
- Features: Data Storage / Memory, Flat Panel Displays, In-situ / System Mounted, Non-contact, Non-destructive, Optical Components, Other
- Form Factor: Monitor / Instrument
- Technology: Reflectometer
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Supplier: CSA Group
Description: ISO 14701:2011 specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished
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Description: ISO 14701:2011 specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished
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Description: based on MEMS technique. This document does not need intricate instruments (such as scanning probe microscopy and nanoindenter) and special test specimens. Since in-situ on-chip tester in this document and device are fabricated with the same process on the same wafer, this document can
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Supplier: Marposs Corp
Description: designed to control the thickness of different type of parts, glass, plastic and silicon wafers. Thanks to the infrared light source is possible to measure none transparent materials too. Our gauges are designed to improve and maintain machine cycle times, quality of the final product
- Gaging Technology: Non-contact
- Attribute Measurement Capability: Thickness Gage
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Supplier: Shimadzu Scientific Instruments, Inc.
Description: enable confident and convenient use for routine analysis as well as demanding research applications. The UV-2700 is capable of 8-Abs measurements, and optimal for measuring low transmittance samples. Validation software is provided as standard for both instruments, so equipment
- Wavelength Range: 185 to 1,400 nm
- Spectral Resolution: 0.1 nm
- Wavelength Accuracy: 0.1 nm
- Wavelength Reproducibility: 0.05 nm
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Supplier: DataPhysics Instruments USA Corp.
Description: and the reliable auto focus system by Data Physics Instruments, the OCA 200 is equipped to handle any kind of sample size from a macroscopic silicon wafer to the microscopic mesh structure of a coronary stent. In combination with the high-performance camera with USB 3 interface
- Properties Analyzed: Wettability / Contact Angle
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Supplier: Gilson Company, Inc.
Description: torque. Dynamic shear modulus and phase angle properties are measured. HM-86 Air-Bearing DSR tests asphalt binder in standard QC/QA testing and some research applications. The instrument can be operated in strain control or stress control modes. The system includes a torque-measuring
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Supplier: Gilson Company, Inc.
Description: torque. Dynamic shear modulus and phase angle properties are measured. HM-86 Air-Bearing DSR tests asphalt binder in standard QC/QA testing and some research applications. The instrument can be operated in strain control or stress control modes. The system includes a torque-measuring
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The IMS5420-TH white light interferometer opens up new perspectives in the thickness measurement of monocrystalline silicon wafers. Thanks to the high performance SLED, the IMS5420-TH can be used for undoped, doped and highly doped SI wafers (read more)
Browse Interferometers Datasheets for Micro-Epsilon Group -
Product Overview Used as structural support members in precision metrology equipment, wafer inspection stages, coordinate measuring machines, and optical platforms where frame rigidity and dimensional stability directly determine measurement accuracy. Fountyl silicon (read more)
Browse Silicon Carbide and Silicon Carbide Ceramics Datasheets for Fountyl Technologies Pte. Ltd. -
Applications & Industries Silicon nitride ceramic porous tooling blocks are widely used in: Semiconductor Equipment: wafer handling fixtures, process supports (read more)
Browse Silicon Nitride and Silicon Nitride Ceramics Datasheets for Shenzhen Great Precision Ceramic CO., LTD. -
interferometric sensor line can measure the thickness of substrates such as silicon, SiC, GaN, glass, and sapphire, as well as ultra-thin coatings such as silicon oxide and dielectric materials, including interlayer dielectrics. Marposs is also a leading supplier of sensors designed for (read more)
Browse Dimensional Gages and Instruments Datasheets for Marposs Corp -
Display (FPD) Production: High-speed material handling across LCD and OLED cleanroom assembly lines. Photovoltaic and New Energy Systems: High-throughput silicon wafer transport, solar module positioning, and automated visual inspection platforms (read more)
Browse Aluminum Oxide and Alumina Ceramics Datasheets for Fountyl Technologies Pte. Ltd. -
. It is important to note that at these narrow bandwidths, commercial instruments become incapable of measuring the filters effectively and specialized metrology techniques are required, as described elsewhere in application (read more)
Browse Optical Filters Datasheets for Alluxa, Inc.
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Moisture Measurement as Quality Assurance in High
High purity gases are used across an enormous range of applications, from carbon dioxide used as a. refrigerant gas, to argon used in the production of silicon wafers for the electronics industry. Moisture is. a common and undesirable contaminant in many high purity gases, and measuring moisture
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Bellows With a Twist (.doc)
What do a micron-precision silicon wafer cutter, a surgical microscope focusing mechanism, and a target sighting system for an MIA2 Abrams tank all have in common? Each contains an electrodeposited nickel bellows coupling. Such couplings excel in instrumentation and fractional-horsepower
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Counterfeit Electronics and Lasers
engraving systems, high-quality marks can also be made within very small dimension parameters. It is possible to mark everything from a corporate-supplied cellphone or laptop to PCB boards, silicon wafers and semiconductor parts. Figure 2: In the European Union, CE Markings are standard indicators
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Designing Atmospheric-Pressure Plasma Sources for Surface Engineering of Nanomaterials
for separation of. one particle type from a heterogeneous sample [8, 9, 11, 13,. 14, 16, 35]. 3 Methods. 3.1 Device fabrication. A silicon master stamp was fabricated on a o100> workinggrade. silicon substrate (University Wafer, South Boston, MA,. USA). The wafer was coated with AZ 9260 photoresist (AZ
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MSilica Nanoparticles Treated by Cold Atmospheric-Pressure Plasmas Improve the Dielectric Performance of Organic-Inorganic Nanocomposites
Fabrication. Experimental devices were fabricated using standard soft. lithography techniques [45]. First, AZ 9260 (AZ Electronic. Materials, Somerville, NJ, USA) photoresist was spun onto a. clean /100S silicon substrate. The wafer was exposed to UV. light for 60 s through a mask patterned
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Laser Fizeau interferometer for silicon wafer site flatness testing
In addition, the site flatness statistics of a silicon wafer measured by the instrument are given.
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An instrument for contactless lifetime measurements in semiconductor layers of silicon-on-insulator (SOI) materials
An instrument measuring lifetimes in silicon wafers and SIMOX structures was built on the basis of carrier genera- tion by short light pulses and contactless probing of the photoconductivity decay in a microwave resonator.
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Novel one-step aqueous solutions to replace pregate oxide cleans
The surface roughness of the silicon wafer was measured using a Digital Instruments DI-5000 atomic force microscope (AFM).
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Ultraviolet Thin Film Coating Characterization
However, it should be pointed out that on our instruments , epitaxial grade silicon wafers consistently measure out at 1 Angstrom RMS, so that the surfaces polished by vendor "D" therefore may be nearly damage free and close to the optimized optical surface.
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Ferroelectricity at the Nanoscale
The thickness of a type I LB film deposited on polished silicon wafer was measured with a commercial AFM instrument (NT-MDT model Solver P47) operated in noncontact mode with a silicon cantilever.
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Experimental design for optimizing the corrosion resistance of pulse reverse electrodeposited graphene oxide thin film
Before the measurement , the instrument was calibrat- ed by silicon wafer .
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Comparative studies on single-layer reduced graphene oxide films obtained by electrochemical reduction and hydrazine vapor reduction
Before measure- ment , the instrument was calibrated by silicon wafer .
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A New Line Width Standard For Reflected Light Inspection
Most line width measurement instruments presently used to measure features on silicon wafers operate in the following manner: .
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Low-level birefringence detection system for stress measurement in semiconductors
Birefringence measurement of a 2-inch silicon wafer for instrument repeatability assessment.
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Comparison of silicon oxide films deposited by RF ion beam sputtering and e-beam gun evaporation in visible to UV ranges
A silicon wafer was used for AFM measurement by Digital Instrument model SPM II.