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Supplier: Rigaku Corporation
Description: Rigaku's WaferX 300 represents the culmination of 25 years of experience in the X-ray fluorescence analysis of thin films on silicon wafers. Specifically developed as an in-process metrology tool, the system incorporates "bridge tool" technology — servicing 6", 8", as well as
- Applications: Semiconductor Wafers
- Form Factor: Monitor / Instrument
- Maximum Wafer / Part Size: 150 to 300 mm
- Measurement Capability: Composition, Thickness - Film / Layer
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Supplier: Accuris
Description: Standard Guide for Application of Silicon Standard Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of Silicon
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Supplier: StellarNet, Inc.
Description: film and/or optical measurement requirements. Thin Film Applications Solar PV Increased production of Thin-Film Photovoltaics (TFPVs) is becoming more predominant due to lower costs than their silicon-wafer-based cousins. Getting accurate thickness
- Applications: Semiconductor Wafers, CVD / PVD Films, Data Storage / Memory, Flat Panel Displays, Optical Components , Polishing / CMP, Polymers / Photoresists, Other
- Form Factor: Monitor / Instrument
- Measurement Capability: Thickness - Film / Layer, Thickness - Wafer / Disc (TTV)
- Mounting / Loading: In-situ / System Mounted
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Supplier: ASTM International
Description: reference wafers in qualifying, calibrating, and controlling various types of resistivity instrumentation. 1.4 The guide provides criteria for selection of instruments for determining the resistivity of silicon resistivity reference materials, procedures for maintaining such
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Supplier: ASTM International
Description: calibrating resistivity reference wafers, and use of resistivity reference wafers in qualifying, calibrating, and controlling various types of resistivity instrumentation. 1.4 The guide provides criteria for selection of instruments for determining the resistivity of
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Supplier: ASTM International
Description: This standard was transferred to SEMI (www.semi.org) May 2003 1.1 This guide defines standardized positions for measuring diameter of circular wafers of silicon and other semiconducting materials that contain flats or notches on the periphery. It was developed for use with
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Industrial Thermometers - Infrared Pyrometer With Fiber Optic For Silicon Wafers -- IS 50-Si-LO plus
Description: Pyrometer with fiber optics for non-contact measurements on silicon wafers, e. g. in vacuum chambers with temperature ranges between 400 and 1600 °C. Key Features Very short response time below 1 ms Extremely short spot sizes, min. 0.45 mm Built-in LC
- Celsius Scale: 400 to 1600 C
- General Features: Records Min/Max Values, Application Software Included, Probe, Laser Spot Aiming / Sighting
- Scale: Celsius
- Technology Type: Thermal Pyrometer / Detector, Other
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Supplier: ASTM International
Description: monochromatic X-ray source. 1.2 This test method can be used for both n-type and p-type silicon. 1.3 This test method can be used to detect surface elemental contamination that is within the analyte depth of approximately 5 nm for highly mirror-polished silicon wafers. The
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Description: ISO 14701:2011 specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished
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Description: IEC 62047-47:2024 specifies the requirements and testing method to measure the bending strength of microstructures which are fabricated by micromachining technology used in silicon-based micro-electromechani cal system (MEMS). This document is applicable to the in-situ bending strength
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Supplier: CSA Group
Description: ISO 14701:2011 specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished
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Supplier: Marposs Corp
Description: has been designed to control the thickness of different type of parts, glass, plastic and silicon wafers. Thanks to the infrared light source is possible to measure none transparent materials too. Our gauges are designed to improve and maintain machine cycle times, quality of
- Technology: Non-contact
- Type: Thickness Gage
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Supplier: Shimadzu Scientific Instruments, Inc.
Description: -enhanci ng features to enable confident and convenient use for routine analysis as well as demanding research applications. The UV-2700 is capable of 8-Abs measurements, and optimal for measuring low transmittance samples. Validation software is provided as standard for both
- Application Software Included: Yes
- Computer Interface: Yes
- Detector Type: Photomultiplier, Other Detector
- Display Options: None
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Supplier: DataPhysics Instruments USA Corp.
Description: zoom lens and the reliable auto focus system by Data Physics Instruments, the OCA 200 is equipped to handle any kind of sample size from a macroscopic silicon wafer to the microscopic mesh structure of a coronary stent. In combination with the high-performance camera with USB 3
- Property Analyzed: Wettability / Contact Angle
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Supplier: Gilson Company, Inc.
Description: is oscillated at a known torque. Dynamic shear modulus and phase angle properties are measured. HM-86 Air-Bearing DSR tests asphalt binder in standard QC/QA testing and some research applications. The instrument can be operated in strain control or stress control modes. The system includes a
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Supplier: Gilson Company, Inc.
Description: is oscillated at a known torque. Dynamic shear modulus and phase angle properties are measured. HM-86 Air-Bearing DSR tests asphalt binder in standard QC/QA testing and some research applications. The instrument can be operated in strain control or stress control modes. The system includes a
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The IMS5420-TH white light interferometer opens up new perspectives in the thickness measurement of monocrystalline silicon wafers. Thanks to the high performance SLED, the IMS5420-TH can be used for undoped, doped and highly doped SI wafers (read more)
Browse Interferometers Datasheets for Micro-Epsilon Group -
interferometric sensor line can measure the thickness of substrates such as silicon, SiC, GaN, glass, and sapphire, as well as ultra-thin coatings such as silicon oxide and dielectric materials, including interlayer dielectrics. Marposs is also a leading supplier of sensors designed for (read more)
Browse Dimensional Gages and Instruments Datasheets for Marposs Corp -
Display (FPD) Production: High-speed material handling across LCD and OLED cleanroom assembly lines. Photovoltaic and New Energy Systems: High-throughput silicon wafer transport, solar module positioning, and automated visual inspection platforms (read more)
Browse Aluminum Oxide and Alumina Ceramics Datasheets for Fountyl Technologies Pte. Ltd. -
silicon, which undergoes multiple steps like photolithography, etching, doping, and layering. Each step adds or modifies specific features on the wafer to create intricate circuits. Photolithography, for instance, uses ultraviolet light to transfer circuit patterns onto the silicon wafer. This (read more)
Browse Microcontrollers (MCU) Datasheets for ODG (Origin Data Global) -
. It is important to note that at these narrow bandwidths, commercial instruments become incapable of measuring the filters effectively and specialized metrology techniques are required, as described elsewhere in application (read more)
Browse Optical Filters Datasheets for Alluxa, Inc.
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Moisture Measurement as Quality Assurance in High
High purity gases are used across an enormous range of applications, from carbon dioxide used as a. refrigerant gas, to argon used in the production of silicon wafers for the electronics industry. Moisture is. a common and undesirable contaminant in many high purity gases, and measuring moisture
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Bellows With a Twist (.doc)
What do a micron-precision silicon wafer cutter, a surgical microscope focusing mechanism, and a target sighting system for an MIA2 Abrams tank all have in common? Each contains an electrodeposited nickel bellows coupling. Such couplings excel in instrumentation and fractional-horsepower
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Counterfeit Electronics and Lasers
engraving systems, high-quality marks can also be made within very small dimension parameters. It is possible to mark everything from a corporate-supplied cellphone or laptop to PCB boards, silicon wafers and semiconductor parts. Figure 2: In the European Union, CE Markings are standard indicators
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Designing Atmospheric-Pressure Plasma Sources for Surface Engineering of Nanomaterials
for separation of. one particle type from a heterogeneous sample [8, 9, 11, 13,. 14, 16, 35]. 3 Methods. 3.1 Device fabrication. A silicon master stamp was fabricated on a o100> workinggrade. silicon substrate (University Wafer, South Boston, MA,. USA). The wafer was coated with AZ 9260 photoresist (AZ
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MSilica Nanoparticles Treated by Cold Atmospheric-Pressure Plasmas Improve the Dielectric Performance of Organic-Inorganic Nanocomposites
Fabrication. Experimental devices were fabricated using standard soft. lithography techniques [45]. First, AZ 9260 (AZ Electronic. Materials, Somerville, NJ, USA) photoresist was spun onto a. clean /100S silicon substrate. The wafer was exposed to UV. light for 60 s through a mask patterned
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Laser Fizeau interferometer for silicon wafer site flatness testing
In addition, the site flatness statistics of a silicon wafer measured by the instrument are given.
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An instrument for contactless lifetime measurements in semiconductor layers of silicon-on-insulator (SOI) materials
An instrument measuring lifetimes in silicon wafers and SIMOX structures was built on the basis of carrier genera- tion by short light pulses and contactless probing of the photoconductivity decay in a microwave resonator.
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Novel one-step aqueous solutions to replace pregate oxide cleans
The surface roughness of the silicon wafer was measured using a Digital Instruments DI-5000 atomic force microscope (AFM).
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Ultraviolet Thin Film Coating Characterization
However, it should be pointed out that on our instruments , epitaxial grade silicon wafers consistently measure out at 1 Angstrom RMS, so that the surfaces polished by vendor "D" therefore may be nearly damage free and close to the optimized optical surface.
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Ferroelectricity at the Nanoscale
The thickness of a type I LB film deposited on polished silicon wafer was measured with a commercial AFM instrument (NT-MDT model Solver P47) operated in noncontact mode with a silicon cantilever.
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Experimental design for optimizing the corrosion resistance of pulse reverse electrodeposited graphene oxide thin film
Before the measurement , the instrument was calibrat- ed by silicon wafer .
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Comparative studies on single-layer reduced graphene oxide films obtained by electrochemical reduction and hydrazine vapor reduction
Before measure- ment , the instrument was calibrated by silicon wafer .
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A New Line Width Standard For Reflected Light Inspection
Most line width measurement instruments presently used to measure features on silicon wafers operate in the following manner: .
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Low-level birefringence detection system for stress measurement in semiconductors
Birefringence measurement of a 2-inch silicon wafer for instrument repeatability assessment.
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Comparison of silicon oxide films deposited by RF ion beam sputtering and e-beam gun evaporation in visible to UV ranges
A silicon wafer was used for AFM measurement by Digital Instrument model SPM II.