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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET TRENCH_MOSFETS
- Transistor Type: MOSFET
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Supplier: ODG (Origin Data Global)
Description: PDFN-8(3.3x3.3) MOSFETs ROHS
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Supplier: Win Source Electronics
Description: mO Number of Pins: 8 Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOP Popularity: Low Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Shortage Lead Free: Yes RoHS: Compliant Continuous Drain Current (ID): 8 A Drain to Source Resistance: 26 mO
- Package Type: SOT3, Other
- Transistor Type: MOSFET
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Description: MOSFET N-CH 30V 100A ATPAK
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: ODG (Origin Data Global)
Description: TO-247-3 MOSFETs ROHS
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Description: MOSFET N-CH 100V 209A TO247AC
- Package Type: TO-247, Other
- Transistor Type: MOSFET
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Description: MOSFET N-CH 100V 209A TO247AC
- Package Type: TO-247, Other
- Transistor Type: MOSFET
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Supplier: Utmel Electronic Limited
Description: 30V 21.8A 7mO@10V,21.8A 3.25W 2V@250uA N Channel TO-252 MOSFETs ROHS
- Transistor Type: MOSFET
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Supplier: ODG (Origin Data Global)
Description: MOSFET N-CH 100V 209A TO247AC
- Package Type: TO-247, Other
- Polarity: N-Channel, Other
- Transistor Type: MOSFET, Other
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Supplier: Toshiba America, Inc.
Description: MOSFETs. Its main products include the mid- to high-voltage DTMOS Series with a VDSS of 500V to 800V and the low-voltage U-MOS Series with a VDSS of 12V to 250V.
- Transistor Grade / Operating Range: Industrial, Automotive
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1027852-ATP218-TL-H Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to
- Package Type: SOT3
- Polarity: N-Channel
- Transistor Type: MOSFET
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Description: MV POWER MOS
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Acme Chip Technology Co., Limited
Description: MOSFET N/P-CH 60V 6.6A TO252-4L
- Transistor Type: MOSFET
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Supplier: MACOM
Description: At MACOM we offer a broad range of TMOS and DMOS RF power MOSFET transistor products as discrete devices from DC to 1.0 GHz. Our high power MOSFET transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical
- Package Type: Other
- Transistor Grade / Operating Range: Commercial, Industrial
- Transistor Type: MOSFET RF Transistors
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Supplier: Utmel Electronic Limited
Description: Transistors RF MOSFET Power 60W 1GHZ FET TO-270
- Polarity: N-Channel, Other
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: RF MOSFET Transistors RF LDMOS FET TO-272N
- Transistor Type: MOSFET
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Supplier: DigiKey
Description: N-Channel 100V 209A (Tc) 556W (Tc) Through Hole TO-247AC
- Package Type: TO-247, Other
- Polarity: N-Channel
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Supplier: Acme Chip Technology Co., Limited
Description: MOSFET PMV77EN TO-236AB REELLP
- Transistor Type: MOSFET
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Supplier: LCSC Electronics Technology (HK) Limited
Description: TO-252 MOSFETs ROHS
- Package Type: TO-251 / TO-252
- Transistor Type: MOSFET
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Supplier: LCSC Electronics Technology (HK) Limited
Description: TO-252 MOSFETs ROHS
- Package Type: TO-251 / TO-252
- Transistor Type: MOSFET
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Supplier: LCSC Electronics Technology (HK) Limited
Description: TO-252 MOSFETs ROHS
- Package Type: TO-251 / TO-252
- Transistor Type: MOSFET
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Supplier: LCSC Electronics Technology (HK) Limited
Description: TO-252 MOSFETs ROHS
- Package Type: TO-251 / TO-252
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: TO-252-3 Packaging: Reel Height: 2.3 mm Length: 6.5 mm Width: 6.22 mm
- Package Type: SOT3
- Transistor Type: MOSFET
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Supplier: Acme Chip Technology Co., Limited
Description: MOSFET TO252
- Transistor Type: MOSFET
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Supplier: Utmel Electronic Limited
Description: Transistor: P-MOSFET; unipolar; -100V; -0.23A; 0.7W; TO92
- Transistor Type: MOSFET
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Supplier: Utmel Electronic Limited
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220; UltraFET®
- Transistor Type: MOSFET
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Supplier: Acme Chip Technology Co., Limited
Description: RF MOSFET TO220FP
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: POWER MOS IV® MOSFET
- Package Type: TO-247, Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Package Type: TO-251 / TO-252, Other
- Polarity: P-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans RF MOSFET N-CH 20V 0.03A 4-Pin TO-50
- Polarity: N-Channel
- Transistor Type: MOSFET RF Transistors
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Supplier: Microchip Technology, Inc.
Description: Efficiency IN A 3.5kw Single Phase PFC Introduction to MOSFETs Latest Technology PT IGBTs vs. Power MOSFETs Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced Failures in
- Transistor Type: MOSFET
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Supplier: ODG (Origin Data Global)
Description: RF TRANSISTOR 100W TO-220
- Operating Frequency: 1.8 to 250 MHz
- Package Type: TO-220, Other
- Power Gain: 21.1 dB
- Transistor Type: MOSFET RF Transistors, Other
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Supplier: Twilight Technology Inc.
Description: reliability, CTE mismatches, obsolescence, custom packaging requirements, and board space issues. Our products, which we make available in commercial, industrial, and military grade levels, range from simple two-terminal discrete devices, to complex Application Specific Integrated Circuits
- Transistor Type: Power MOSFET
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Supplier: Solid State Devices, Inc.
Description: Features: Rugged construction Low RDS(on) and high transconductance Fast recovery and superior dv/dt performance Increased reverse energy capability Low input and transfer capacitance for easy paralleling Hermetically sealed package Very fast switching speed TX, TXV, S-Level screening
- Package Type: TO-39
- Polarity: N-Channel
- Transistor Grade / Operating Range: Military
- Transistor Type: MOSFET
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and
- Transistor Type: MOSFET RF Transistors
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The ALD1107 MOSFET is a high-precision P-channel MOSFET transistor array by Advanced Linear Devices. Its low threshold voltage of -0.7V, low input capacitance, and typical offset voltage of only 2mV make it ideal for analog switching and amplifying (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
STMicroelectronics' STDRIVEG600 is a single-chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFETs. The high-side section is designed to stand a voltage up to 600 V. It is suitable for applications with bus voltage up to 500 V. The STDRIVEG600 can (read more)
Browse Gate Drivers Datasheets for DigiKey -
The ALD1115 MOSFET by Advanced Linear Devices is a monolithic complementary N-channel and P-channel transistor pair that is designed for a broad range of analog applications. It contains an N-channel and a P-channel MOSFET in one package. These chips are (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The BSS138PS,115 is a high-performance, dual N-channel logic level enhancement mode Field Effect Transistor (FET) produced by NXP Semiconductors. This compact and efficient MOSFET is designed to meet the stringent requirements of modern electronic circuits, providing designers with a reliable (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
The ALD1105 by Advanced Linear Devices is engineered for precision and performance. It combines the power of an N-channel MOSFET with a P-channel MOSFET in a single package. The transistor pair is matched for minimum offset voltage and differential thermal (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD1116 from Advanced Linear Devices is a dual N-channel enhancement-mode MOSFET array designed for precision in analog circuits. It excels in low-frequency and near-DC conditions, making it ideal for a broad range of analog applications. The device features (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD1106 MOSFET by Advanced Linear Devices is designed to provide superior precision and performance in low-frequency and near-DC operating environments. It features matched transistor pairs that minimize offset voltage and differential thermal response (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
mm) package has seen increasingly wide adoption and is quickly becoming the ‘de-facto’ industry standard package for small-signal MOSFETs and bipolar transistors intended for use in automotive applications (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
ideal for precision signal switching and amplifying in +2V to +10V systems, delivering low input bias current, low input capacitance, and fast switching speed. The MOSFET features a matched transistor pair, ensuring minimal offset voltage and consistent thermal responses. With a low threshold (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
, and paste the specification and quantity label on the surface. (5) Package carton size: 21*21*12cm (6) Gross weight: 1.5 kg TO-3P-220-247-254-257-258-264 Aluminum Nitride Ceramic Thermal Pads Without Hole For MOSFET Transistor IGBT Transistor Heat Sink Package (read more)
Browse Aluminum Oxide and Alumina Ceramics Datasheets for Xiamen Innovacera Advanced Materials Co., Ltd.
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Page 3. Semiconductor parts with 343 in root number
Bipolar Power TO218 NPN 16A 160V POWER TRANSISTORS COMPLEMENTARY SILICON MOSFET -3.3 Amps, -12 Volts P-Channel TSOP-6 .
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A study of MOS-controlled thyristor driver
It can b e used to gate MCTs, IGBTs. and power MOSFETs , both iV a n d … T h e input capacitance of t h e tested MCT TO218 ic 18 nF. … silicon controlled rectifiers ( SCRsj gate turn-off thyrstors (GTOs),and insulated gate bipolar transistors (IGBTs) in the …
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Page 6. Semiconductor parts with 147 in root number
POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS Power MOSFET and Schottky Diode−20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 Bipolar Power TO218 PNP 10A 100V .
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Page 52. Semiconductor parts with 102 in root number
High−Current Complementary Silicon Power Transistors Bipolar Power TO218 NPN 15A 200V Power MOSFET -8.0 V, -4.6 A Dual P-Channel ChipFET™ .
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5603 datasheet : Datasheets for Electronic Components and Semiconductors
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications NPN Silicon Transistor Planar Silicon Transistor TO218 .
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Forward blocking comparison of P and N MCTs
… MOS Controlled Thyristor (MCT) is a power switching device which makes use of MOSFET technology to control … … behavior of N vs P-MCTs related to the behavior of their lower transistor which should be … These data were taken from MCTs fabricated in our laboratory facility and packaged in commercial TO218 packages.
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Marks’ Standard Handbook for Mechanical Engineers, Eleventh Edition > ELECTRONICS
The advantage of an IGBT over a power MOSFET is that it can be made with higher … Transistor amplifiers can take many different forms. TO127, TO218 , TO220 .
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ON Semiconductor
Protected MOSFETs (19 Package change from TO-218 to TO-247 for all Bipolar Power Transistors TO218 Plastic Tube Dimensions Change .
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ON Semiconductor
Low VCE(Sat) Transistors (150 MOSFETs (704 TO218 Plastic Tube Dimensions Change .
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Power MOS automotive electronics
DEVICE P CHANNEL MOS N CHANNEL MOS N CHANNEL DMOS NPN TRANSISTOR PNP TRANSISTOR ZENER DIODES RESISTORS … For instance the TO218 and TO270 have a junction to air thermal resistance of 30 and 62 … … L. Sutor, and L. E. Terry, "SMARTDISCRETESm A New Trend In The Power MOSFET Industry," The …
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