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Supplier: Win Source Electronics
Description: Transistors - FETs, MOSFETs - RF Case / Package: SOP Popularity: Low Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Shortage Lead Free: Yes RoHS: Compliant Continuous Drain Current (ID): 8 A Drain to Source Resistance: 26 mΩ
- rDS(on): 0.026 ohms
- PD: 1,800 milliwatts
- Output Power: 1.8 watts
- Transistor Type: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 60V, 45A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 45A, MOSFET
- Transistor Type: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 21.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 21.8A, MOSFET Transistor, Single FETs,
- V(BR)DSS: 30 volts
- PD: 8,700 milliwatts
- TJ: -55 C
- Features: Enhancement
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 209A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 209A, MOSFET Transistor, Single FETs,
- V(BR)DSS: 100 volts
- PD: 556 milliwatts
- TJ: -55 to 175 C
- Features: Enhancement, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, TO220, MOSFET Transistor, RF FETs,
- Transistor Type: MOSFET
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Description: MOSFET N-CH 30V 100A ATPAK
- V(BR)DSS: 30 volts
- IDSS: 100,000 milliamps
- Transistor Type: MOSFET
- Features: Other, Tape Reel
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Supplier: Newark, An Avnet Company
Description: MOSFET, N-CH, 30V, 218A, POWER 56; Transistor Polarity:N Channel; Continuous Drain Current Id:218A; Drain Source Voltage Vds:30V; On Resistance Rds(on):900µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1027852-ATP218-TL-H Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss):
- PD: 60,000 milliwatts
- TJ: 150 C
- Transistor Type: MOSFET
- Polarity: N-Channel
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Supplier: Newark, An Avnet Company
Description: MOSFET Transistor; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:20A; On Resistance Rds(on):0.0018ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V; No. of Pins:6Pins RoHS Compliant: Yes
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Supplier: VAST STOCK CO., LIMITED
Description: RF MOSFET Transistors RF LDMOS FET TO-272N
- Transistor Type: MOSFET
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Supplier: Newark, An Avnet Company
Description: P-CHANNEL MOSFET TRANSISTOR, TO-92; Channel Type:-; Drain Source Voltage Vds:-; Continuous Drain Current Id:3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:-; Gate Source Threshold Voltage Max:-; Power Dissipation:6.25W RoHS Compliant: No
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET TRENCH_MOSFETS
- Transistor Type: MOSFET
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Supplier: ODG (Origin Data Global)
Description: PDFN-8(3.3x3.3) MOSFETs ROHS
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Supplier: Richardson RFPD
Description: Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with
- rDS(on): 0.9 ohms
- Transistor Type: MOSFET, Power MOSFET
- Features: Other
- Package Type: TO-247
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Supplier: Utmel Electronic Limited
Description: 30V 21.8A 7mΩ@10V,21.8A 3.25W 2V@250uA N Channel TO-252 MOSFETs ROHS
- Transistor Type: MOSFET
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 60V 18.2A 73mΩ@10V,18.2A N Channel TO-252-2 MOSFETs ROHS
- V(BR)DSS: 60 volts
- rDS(on): 0.073 ohms
- Transistor Type: MOSFET
- Polarity: N-Channel
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Supplier: MACOM
Description: At MACOM we offer a broad range of TMOS and DMOS RF power MOSFET transistor products as discrete devices from DC to 1.0 GHz. Our high power MOSFET transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical
- Output Power: 2 to 600 watts
- Power Gain: 8 to 21 dB
- Operating Frequency: 5 to 1,000 MHz
- Transistor Grade / Operating Range: Commercial, Industrial
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Supplier: Solid State Devices, Inc.
Description: Features: Rugged construction Low RDS(on) and high transconductance Fast recovery and superior dv/dt performance Increased reverse energy capability Low input and transfer capacitance for easy paralleling Hermetically sealed package Very fast switching speed TX, TXV, S-Level screening
- V(BR)DSS: 125 volts
- IDSS: 0.1 milliamps
- VGS(off): 2.5 volts
- rDS(on): 7.5 ohms
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Supplier: Twilight Technology Inc.
Description: Twilight Technology, Inc. specializes in IC packaging and testing services focused on providing solutions for high reliability applications or obsolete components. Twilight Technology has manufactured and marketed a variety of standard and proprietary semiconductor packaging and memory module
- Transistor Type: Power MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Microchip Technology Category: Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs Package: Tube Product Status: Active FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss):
- Transistor Type: MOSFET
- Polarity: N-Channel
- Package Type: SOT3, TO-247
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Supplier: Win Source Electronics
Description: Manufacturer: onsemi Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs Series: SuperFET® III Package: Tube Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ)
- Transistor Type: MOSFET
- Package Type: SOT3, TO-220
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Supplier: Utmel Electronic Limited
Description: IRFB4615PBF N-channel MOSFET Transistor, 35 A, 150 V, 3-Pin TO-220AB
- V(BR)DSS: 150 volts
- rDS(on): 39,000,000 ohms
- PD: 144,000 milliwatts
- TJ: -55 to 175 C
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Transistor Type: MOSFET RF Transistors
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Supplier: DigiKey
Description: N-Channel 100V 209A (Tc) 556W (Tc) Through Hole TO-247AC
- Polarity: N-Channel
- Features: Other
- Package Type: TO-247
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Supplier: Utmel Electronic Limited
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; 36W; TO220AB
- V(BR)DSS: 400 volts
- rDS(on): 3.6 ohms
- PD: 36,000 milliwatts
- TJ: -55 to 150 C
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Supplier: Acme Chip Technology Co., Limited
Description: MOSFET N-CHANNEL 100V 28A TO220
- V(BR)DSS: 100 volts
- IDSS: 28,000 milliamps
- Transistor Type: MOSFET
- Features: Other
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Supplier: Allied Electronics, Inc.
Description: Enhancement Mode MOSFET Transistors
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Supplier: Utmel Electronic Limited
Description: Transistor MOSFET N-CH 700V 0.17A 3-Pin (2+Tab) TO-252
- V(BR)DSS: 700 volts
- PD: 2,500 milliwatts
- TJ: -55 to 150 C
- Number of Transistors in the Chip: 1
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Supplier: Allied Electronics, Inc.
Description: Power MOSFET; 100V; TO-220 FullPak
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Transistor Type: MOSFET
- Polarity: N-Channel
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Supplier: Allied Electronics, Inc.
Description: Features: 175°C Rated (Max. Junction Temperature) TrenchFET® Power MOSFETs
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Supplier: RS Components, Ltd.
Description: INFINEON MOSFET IRF100P218AKMA1
- Transistor Type: MOSFET
- Features: Other
- Package Type: TO-247
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Supplier: Radwell International
Description: TRANSISTOR, MOSFET, TO-218, 800V. FREE 2 YEAR RADWELL WARRANTY
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Supplier: ROHM Semiconductor USA, LLC
Description: MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.
- V(BR)DSS: -60 volts
- IDSS: -14,000 milliamps
- PD: 20,000 milliwatts
- TJ: -55 to 150 C
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Supplier: Toshiba America, Inc.
Description: Toshiba offers an extensive portfolio of low-VDSS and mid/high-VDSS MOSFETs in various circuit configurations and packages, featuring high speed, high performance, low loss, low on-resistance, small packaging, etc. Toshiba has decades of experience in the development and manufacturing of
- Transistor Grade / Operating Range: Automotive, Industrial
- Transistor Type: MOSFET, MOSFET RF Transistors
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The ALD1107 MOSFET is a high-precision P-channel MOSFET transistor array by Advanced Linear Devices. Its low threshold voltage of -0.7V, low input capacitance, and typical offset voltage of only 2mV make it ideal for analog switching and amplifying (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
STMicroelectronics' STDRIVEG600 is a single-chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFETs. The high-side section is designed to stand a voltage up to 600 V. It is suitable for applications with bus voltage up to 500 V. The STDRIVEG600 can (read more)
Browse Gate Drivers Datasheets for DigiKey -
The ALD1115 MOSFET by Advanced Linear Devices is a monolithic complementary N-channel and P-channel transistor pair that is designed for a broad range of analog applications. It contains an N-channel and a P-channel MOSFET in one package. These chips are (read more)
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The BSS138PS,115 is a high-performance, dual N-channel logic level enhancement mode Field Effect Transistor (FET) produced by NXP Semiconductors. This compact and efficient MOSFET is designed to meet the stringent requirements of modern electronic circuits, providing designers with a reliable (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
The ALD1105 by Advanced Linear Devices is engineered for precision and performance. It combines the power of an N-channel MOSFET with a P-channel MOSFET in a single package. The transistor pair is matched for minimum offset voltage and differential thermal (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD1116 from Advanced Linear Devices is a dual N-channel enhancement-mode MOSFET array designed for precision in analog circuits. It excels in low-frequency and near-DC conditions, making it ideal for a broad range of analog applications. The device features (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD1106 MOSFET by Advanced Linear Devices is designed to provide superior precision and performance in low-frequency and near-DC operating environments. It features matched transistor pairs that minimize offset voltage and differential thermal response (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
mm) package has seen increasingly wide adoption and is quickly becoming the ‘de-facto’ industry standard package for small-signal MOSFETs and bipolar transistors intended for use in automotive applications (read more)
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ideal for precision signal switching and amplifying in +2V to +10V systems, delivering low input bias current, low input capacitance, and fast switching speed. The MOSFET features a matched transistor pair, ensuring minimal offset voltage and consistent thermal responses. With a low threshold (read more)
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, and paste the specification and quantity label on the surface. (5) Package carton size: 21*21*12cm (6) Gross weight: 1.5 kg TO-3P-220-247-254-257-258-264 Aluminum Nitride Ceramic Thermal Pads Without Hole For MOSFET Transistor IGBT Transistor Heat Sink Package (read more)
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Page 3. Semiconductor parts with 343 in root number
Bipolar Power TO218 NPN 16A 160V POWER TRANSISTORS COMPLEMENTARY SILICON MOSFET -3.3 Amps, -12 Volts P-Channel TSOP-6 .
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A study of MOS-controlled thyristor driver
It can b e used to gate MCTs, IGBTs. and power MOSFETs , both iV a n d … T h e input capacitance of t h e tested MCT TO218 ic 18 nF. … silicon controlled rectifiers ( SCRsj gate turn-off thyrstors (GTOs),and insulated gate bipolar transistors (IGBTs) in the …
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Page 6. Semiconductor parts with 147 in root number
POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS Power MOSFET and Schottky Diode−20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 Bipolar Power TO218 PNP 10A 100V .
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Page 52. Semiconductor parts with 102 in root number
High−Current Complementary Silicon Power Transistors Bipolar Power TO218 NPN 15A 200V Power MOSFET -8.0 V, -4.6 A Dual P-Channel ChipFET™ .
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5603 datasheet : Datasheets for Electronic Components and Semiconductors
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications NPN Silicon Transistor Planar Silicon Transistor TO218 .
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Forward blocking comparison of P and N MCTs
… MOS Controlled Thyristor (MCT) is a power switching device which makes use of MOSFET technology to control … … behavior of N vs P-MCTs related to the behavior of their lower transistor which should be … These data were taken from MCTs fabricated in our laboratory facility and packaged in commercial TO218 packages.
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Marks’ Standard Handbook for Mechanical Engineers, Eleventh Edition > ELECTRONICS
The advantage of an IGBT over a power MOSFET is that it can be made with higher … Transistor amplifiers can take many different forms. TO127, TO218 , TO220 .
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ON Semiconductor
Protected MOSFETs (19 Package change from TO-218 to TO-247 for all Bipolar Power Transistors TO218 Plastic Tube Dimensions Change .
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ON Semiconductor
Low VCE(Sat) Transistors (150 MOSFETs (704 TO218 Plastic Tube Dimensions Change .
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Power MOS automotive electronics
DEVICE P CHANNEL MOS N CHANNEL MOS N CHANNEL DMOS NPN TRANSISTOR PNP TRANSISTOR ZENER DIODES RESISTORS … For instance the TO218 and TO270 have a junction to air thermal resistance of 30 and 62 … … L. Sutor, and L. E. Terry, "SMARTDISCRETESm A New Trend In The Power MOSFET Industry," The …