Diodes are two-terminal semiconductors that allow current to flow through in only one direction.
Current limiting diodes (CLD) regulate current over a wide voltage range. There are several types of current limiting diodes (CLD). Examples include a current regulator diode, constant current diode, and current limit diodes.
Diode arrays are composed of multiple discrete (usually unconnected) diodes on a single silicon chip. Diode arrays are important semiconductor products because they save assembly time and improve reliability over individually packaged diodes. In general, diode arrays use four or more diodes in a single package.
Diodes are electronic components that conduct electric current in only one direction, functioning as a one-way valve. Diodes are manufactured using semiconductor materials such as silicon, germanium or selenium and are used as voltage regulators, signal rectifiers, oscillators and signal modulators / demodulators.
General-purpose diodes are electric components that conduct electric current in only one direction, functioning similarly to a one-way valve.
Gunn diodes or transfer electron devices (TED) exhibit a negative resistance region. They are used in high-frequency applications, often for building RF oscillators. Impact ionization avalanche transit-time (IMPATT) diodes are designed to operate at very high frequency and power. They are used as elements in RF and microwave devices.
High voltage diodes are designed for use in high-voltage applications.
Photodiodes are used for the detection of optical power (UV, Visible, and IR) and for the conversion of optical power to electrical power.
PIN diodes are three-layer semiconductor diodes consisting of an intrinsic layer separating heavily doped P and N layers. The charge stored in the intrinsic layer in conjunction with other diode parameters determines the resistance of the diode at RF and microwave frequencies.
Power diodes are used mainly in high-power applications. They are built with large P-N junctions in order to pass large amounts of current and dissipate large amounts of heat.
Rectifier diodes are designed for use in rectification circuits. Rectifiers are used to convert AC to DC.
RF diodes are designed to handle high-power radio frequency (RF) signals in stereo amplifiers, radio transmitters, television monitors, and other RF or microwave devices.
Schottky diodes in their simplest form consist of a metal layer that contacts a semiconductor element. The metal / semiconductor junctions exhibit rectifying behavior (i.e., the current passes through the structure more readily with one polarity than the other).
Step recovery diodes produce an abrupt turn-off (step) time by allowing a very fast release of stored charge when switching from forward to reverse bias, and from reverse to forward bias.
Transient voltage suppressor (TVS) diodes are designed to limit over-voltages. They can dissipate high amounts of transient power in a short period of time.
Tunnel diodes are heavily doped P-N diodes in which electron tunneling from the conduction band in the N-type material to the valence band in the P-type region produces a region of negative resistance. This negative-resistance region is the most important area of operation. As the voltage is increased, the current decreases. This feature makes tunneling diodes especially useful in oscillators and radio frequency (RF) applications.
Varactor diodes are p-n junction diodes that are designed to act as a voltage controlled capacitance when operated under reverse bias.
Zener diodes are PN junction devices that are designed to operate in the reverse-breakdown region.