TABLE OF CONTENTS Semiconductor characterization techniques are used in order to gain knowledge on the physical properties of a semiconductor crystal. The process is similar to decoding the DNA sequence of a living organism as it involves understanding the nanoseale structure of the crystal, i.e. its atoms, electrons, their structures and their interactions with the surrounding environment. The knowledge gained from the characterization process is essential in determining whether the semiconductor crystal probed is suitable for a particular device component with certain functionalities.
Semiconductor characterization is generally initiated immediately after the synthesis of a crystal. We can distinguish three types of characterization techniques: structural, optical and electrical. In this Chapter, we will briefly review the most common of these semiconductor characterization techniques. The discussion and examples will he primarily directed toward semiconductor thin films, although most of the same techniques can be readily used for bulk crystals as well.
X-ray diffraction employs electromagnetic waves with a wavelength on the order of one angstrom. Since wave diffraction occurs when the dimensions of the diffracting object are of the same order of magnitude as the wavelength of the incident wave, x-rays are ideally suited to probe crystal lattice structures.
X-ray diffraction of semiconductor thin films is generally earned out in a diffractometer. The source of the x-rays is called an x-ray tube (Fig. 13.1) and consists of a water-cooled copper target onto which an accelerated electron beam (up to a few 10's of keV) is impinging...
