Casey Jr., H.C., and Panish M.B., Heterostructure Lasers, parts A & B, Academic Press, New York, 1978.

Chuang, S.L., Physics of Optoelectronic Devices, John Wiley & Sons, New York, p. 497, 1995.

Diaz, J., Yi, H.J., Kim, S., Wang, L.J., and Razeghi, M., "High Temperature Reliability of Aluminum-free 980 nm and 808 nm Laser Diodes," Compound Semiconductors 1995 (Institute of Physics Conference Series 145). eds. J.C. Woo and Y.S. Park, Institute of Physics Publishing, Bristol, UK, pp. 1041 1046, 1996.

Diaz, J., Yi, H.J., and Razeghi, M., "Long-term reliability of Al-free InGaAsP/GaAs ( ?=808nm) lasers at high-power high-temperature operation," Applied Physics Letters 71, pp. 3042 3044, 1997.

Evans, A., Yu, J.S., David, J., Doris, L., Mi, K., Slivken, S., and Razeghi, M., "High-temperature high-power continuous-wave operation of buried heterostmcture quantum-cascade lasers," Applied Physics Letters 84, pp. 314 316, 2004.

Faist, J., Capasso, F., Sivco, D.L., Hutchinson, A.L., and Cho, A.Y., "Quantum cascade laser," Science 264, pp. 553 556, 1994.

Felix, C.L., Meyer, J.R., Vurgaftman, L., Lin, C.H., Murry, S.J., Zhang, D., and Pei, S.S., "High-temperature 4.5 ?m type II quantum-well laser with Auger suppression," IEEE Photonics Technology Letters 9, pp. 734 736, 1997.

Fuchs, F., Weimer, U., Pletschen, W., Schmitz, J., Ahlswede, E., Walther, M., Wagner, J., and Koidl, P., "High performance InAs/Gai _1-xIn _xSb superlattice infrared photodiodes," Applied Physics Letters 71, pp. 3251 3253, 1997.

Henry, C.H., "Theory of the Line width of Semiconductor Lasers", IEEE Journal of...