TABLE OF CONTENTS In the previous chapter we had discussed the experimental setup needed for acquiring the different types of data required for MOSFET model parameter measurements and/or extraction. We had also discussed linear regression methods to determine basic MOSFET parameters. In this chapter we will be concerned with the nonlinear optimization techniques for extracting the device model parameters for various DC and AC models. These techniques are general purpose model parameter extraction methods that can be used for any nonlinear physical model. There are many books devoted to the area of optimization. Our intent here is only to provide an introduction to the optimization technique as applied to the device model parameter extraction. Various optimization programs (also called optimizers),which have been reported in the literature for device model parameter extraction, differ mainly in the optimization algorithms used.
We will first discuss methods used for model parameter extraction for any MOSFET model. This will be followed by some basic definitions, which will be useful in understanding the optimization methods in general, and then discuss the optimization algorithms that are most widely used for the device model parameter extraction. The estimation of the accuracy of the extracted parameters will be discussed using confidence intervals and the confidence region approach. We will conclude this chapter with examples of extracting DC and AC model parameters.
There are basically two ways to extract the model parameter values of any MOSFET model from the device I-V data or C-V data; (1) the linear...
