Mosfet Modeling For VLSI Simulation: Theory And Practice

| Property | Si | SiO 2 | Si 3N 4 | Units |
|---|---|---|---|---|
| Atomic number | 14 |
|
| |
| Molecular weight | 28.29 | 60.08 | 140.28 | g/mol |
| Density at 300 K | 2.33 | 2.27 | 3.0 | g/cm -3 |
| Relative permittivitynb (Dielectric constant) | 11.7 | 3.9 | 7 7.5 |
|
| Breakdown field (Dielectric strength) | 3 10 5 | 8 10 6 | 1 10 7 | V/cm |
| Refractive index | 3.42 | 1.46 | 2.05 |
|
| Thermal conductivity | 1.412 | 0.01.4 |
| W/cm.K |
| Lattice constant | 5.431 |
| ||
| Energy gap E g | 1.12 | 8.0 | 5.0 | eV |
| Intrinsic carrier concentration n i | 1.45 10 10 |
|
| cm -3 |
| Intrinsic Debye length | 2.4 l0 -5 |
|
| cm |
| Bulk electron mobility ? n | 1350 | 2 30 |
| cm 2/V.s |
| Bulk hole mobility ? p | 480 |
|
| cm 2/V.s |
| Constant | Symbol | Magnitude | Units |
|---|---|---|---|
| Electronic charge | q | 1.602 10 -19 | C |
| Free-electron mass | m | 9.11 10 -28 | g |
| Boltzmann's Constant | k | 1.38 10 -23 | J/K |
| 8.62 10 -5 | eV/K | ||
| Planck's Constant | h | 6.25 10 -34 | J.s |
| Permittivity of free space | ? 0 | 8.854 10 -14 | F/cm |
| Thermal voltage at 300 K | V t = KT/ q | 0.02586 | V |
| Thermal energy at 300 K | kT | 0.02586 | eV |
| 1 ?m | (micrometer or micron) = 10 -6 meters = 10 -4 cm = 10 4 ? |