Mosfet Modeling For VLSI Simulation: Theory And Practice

Appendix

Appendix A. Important Properties of Silicon, Silicon Dioxide and Silicon Nitride at 300 K

Property

Si

SiO 2

Si 3N 4

Units

Atomic number

14

Molecular weight

28.29

60.08

140.28

g/mol

Density at 300 K

2.33

2.27

3.0

g/cm -3

Relative permittivitynb (Dielectric constant)

11.7

3.9

7 7.5

Breakdown field (Dielectric strength)

3 10 5

8 10 6

1 10 7

V/cm

Refractive index

3.42

1.46

2.05

Thermal conductivity

1.412

0.01.4

W/cm.K

Lattice constant

5.431

Energy gap E g

1.12

8.0

5.0

eV

Intrinsic carrier concentration n i

1.45 10 10

cm -3

Intrinsic Debye length

2.4 l0 -5

cm

Bulk electron mobility ? n

1350

2 30

cm 2/V.s

Bulk hole mobility ? p

480

cm 2/V.s

Appendix B. Some Important Physical Constants at 300 K

Constant

Symbol

Magnitude

Units

Electronic charge

q

1.602 10 -19

C

Free-electron mass

m

9.11 10 -28

g

Boltzmann's Constant

k

1.38 10 -23

J/K

8.62 10 -5

eV/K

Planck's Constant

h

6.25 10 -34

J.s

Permittivity of free space

? 0

8.854 10 -14

F/cm

Thermal voltage at 300 K

V t = KT/ q

0.02586

V

Thermal energy at 300 K

kT

0.02586

eV

Appendix C. Unit Conversion Factors

1 ?m

(micrometer or micron) = 10 -6 meters = 10 -4 cm = 10 4 ?

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