3.10 Problems

For the problems in this chapter and all future chapters, assume the following transistor parameters:

• npn bipolar transistors:

  ? = 100

  V _A = 80 V

  ? _b = 13 ps

  ? _s = 4 ns

  r _b = 330 ?

• n-channel MOS transistors:

  ? _nC _ox = 190 ?A/V ²

  V _tn = 0.7 V

  ? = 0.6 V ^1/2

  r _ds ( ?) = 5000 L ( ?m)/ I _D (mA) in active region

  C _j = 5 10 ^?4 pF/( ?m) ²

  C _j-sw = 2.0 10 ^?4 pF/ ?m

  C _ox = 3.4 10 ^?3 pF/( ?m) ²

  C _gs(overlap) = C _gd(overlap) = 2.0 10 ^?4 pF/ ?m

• p-channel MOS transistors:

  ? _pC _ox = 50 ?A/V ²

  V _tp = ?0.8 V

  ? = 0.7 V ^1/2

  r _ds ( ?) = 6000L ( ?m)/ I _D (mA) in active region

  C _j = 6 10 ^?4 pF/( ?m) ²

  C _j-sw = 2.5 10 ^?4 pF/ ?m

  C _ox = 3.4 10 ^?3 pF/( ?m) ²

  C _gs(overlap) = C _gd(overlap) = 2.0 10