Power Amplifier Design: A Collection from Applied Microwave & Wireless

1. H.F.Cooke, Microwave Transistors: Theory and Design, Proceedings IEEE , Vol. 59, No. 8, 1971.
2. S.M.Sze, Physics of Semiconductor Devices , New York: John Wiley and Sons, Inc., 1981.
3. R.Allison, Silicon Bipolar Microwave Power Transistors, IEEE Trans. Microwave Theory & Techniques. , Vol. MTT-27, No. 5, 1979.
4. E.O.Johnson, Physical Limitations on Frequency and Power Parameters of Transistors, RCA Review , Vol. 26, June 1965.
5. R.P.Arnold, D.S.Zorglu, A Quantitative Study of Emitter Ballasting, IEEE Trans. El. Dev. , Vol. TED-21, 1974.
6. B.S.Meyerson, High speed Silicon-Germanium Electronics, Scientific American , Vol. 270, No. 3, 1994.
7. P.Potyraj, et al, A 230 W S-Band SiGe Heterojunction Bipolar Transistor, IEEE Trans. Microwave Theory & Techniques , Vol. MTT-44, No. 12.
8. A.Wood, C.Dragon, W.Burger, High Performance Silicon LDMOS Technology for 2 GHz RF Power Amplifier Applications, IEDM Tech. Digest , 1996.
9. C.E.Weitzel, et al, Silicon Carbide High-Power Devices, IEEE Trans. El. Dev. , Vol. TED-43, 1996.