2.1 What characteristics of the semiconductor material determine the frequency range over which it can be used for producing MMICs?

2.2 Which semiconductor substrate materials exhibit a wide band-gap, making them suitable for high-output power applications?

2.3 What are the typical gate voltage and drain current bias settings for a GaAs MESFET?

2.4 What is the bias voltage required between the base and emitter contacts of a typical silicon bipolar transistor to overcome the built-in junction potential and switch the transistor fully on?

2.5 Why must the electrical connections between components on an MMIC be treated as transmission lines?

2.6 How does the characteristic impedance of a microstrip transmission line vary as the width of the track is increased, and is this due to the track looking more inductive or capacitive?

2.7 Figure 2.36 shows the section and plan view of a nichrome resistor. If the nichrome film has a resistivity of 50 ?/square, what is the resistance of this resistor?

Figure 2.36: Section and plan view of a thin-film nichrome resistor.

2.8 Figure 2.37 shows the section and plan view of polyimide and silicon nitride MIM capacitors. Given that the silicon nitride has a thickness of 1,200 and a dielectric constant of ? = 7 x 10 ^-11 and the polyimide thickness is 1.5, ? m and has a dielectric constant of ? = 3.6 x 10 ^-11, what is the capacitance of...