NPN Small-Signal Bipolar Transistors (BJT)
Last Updated: January 16, 2025 Reviewed by: Jon Lowy, consulting engineer
Description
NPN Small-Signal Bipolar Transistors (BJTs) are three-layer semiconductor devices consisting of two N-type regions separated by a thin P-type region. These transistors function as current-controlled current amplifiers, capable of amplifying weak electrical signals while maintaining signal fidelity. They operate with relatively low power and voltage requirements, typically handling currents below 100mA and voltages under 40V.
Working Principle
NPN BJTs operate through the controlled movement of charge carriers across semiconductor junctions. When a small positive voltage is applied to the base-emitter junction, it becomes forward-biased, allowing electrons to flow from the emitter to the base. Since the base region is very thin and lightly doped, only a small fraction of these electrons recombine with holes in the base. The majority of electrons are swept across the reverse-biased base-collector junction by the electric field present there. This creates a much larger collector current that is proportional to the base current, resulting in current amplification. The ratio of collector current to base current, known as current gain (ß or hFE), typically ranges from 100 to 300 in small-signal transistors.
Applications
NPN small-signal BJTs are extensively used in audio frequency preamplifiers for microphones and musical instruments, where they provide clean signal amplification with minimal noise. They're crucial components in FM radio receivers, particularly in RF and IF amplification stages. In industrial sensors, these transistors are employed in temperature measurement circuits, light detection systems, and proximity sensors. They're also found in analog computational circuits, servo motor control systems, and in the input stages of operational amplifiers. Modern smartphone audio circuits still utilize these transistors in their headphone amplifier stages due to their excellent linear response characteristics.
Limitations
NPN small-signal BJTs exhibit several significant limitations. They suffer from temperature sensitivity, with their gain characteristics changing approximately -2mV/°C, which can lead to stability issues in precision circuits. Their frequency response is limited by internal capacitances, typically restricting operation to frequencies below 100MHz in general-purpose devices. These transistors also display a phenomenon called thermal runaway, where increased temperature leads to higher collector current, which in turn causes further heating. Additionally, they're susceptible to noise, particularly at low current levels, and their gain characteristics can vary significantly between individual devices, even within the same manufacturing batch.
Considerations
When implementing NPN small-signal BJTs, initial costs are relatively low, typically ranging from $0.10 to $1.00 per unit in moderate quantities. However, the total cost of implementation must include consideration for additional biasing components and temperature compensation circuits. While these devices are generally reliable with a typical lifetime of 15-20 years under normal operating conditions, they require careful attention to thermal management and operating point stability. Replacement costs are minimal, but the labor involved in desoldering and resoldering surface-mount devices can be significant. Operating expenses are negligible due to their low power consumption, typically less than 100mW per device. Regular maintenance isn't required, but periodic testing of bias points is recommended in precision applications.
from RS Components, Ltd.
350V Audio Transistor, NPN, MJL4281AG [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: To-3pbl
from New Yorker Electronics Co., Inc.
Transistor, Dual NPN, 65V, 0.10A, SOT-363 [See More]
- Polarity: NPN
- IC(max): 100
- VCEO: 65
- Package Type: SOT-363
from Win Source Electronics
Manufacturer: Microchip Technology. Storage Condition: Dry storage cabinet & Humidity protection package. Win Source Part Number: 1174974-2N720AJAN. Polarity: NPN. Number of Elements: 1. Power Dissipation: 500 mW. Number of Pins: 3. Categories: Custom Parts. Case / Package: TO-18. Popularity:... [See More]
- Polarity: NPN; NPN
- TJ: -65
- PD: 500
- Package Type: SOT3; TO-18
from Rochester Electronics
Transistor Digital BJT NPN/PNP 50V 100mA [See More]
- Polarity: NPN; PNP
- Package Type: SC-88/SC70-6/SOT-363 6
- IC(max): 100
from RS Components, Ltd.
Power 15A 230V NPN, MJL3281AG [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: To-3bpl
from New Yorker Electronics Co., Inc.
Transistor, Dual NPN, 45V, 0.10A, SOT-563 [See More]
- Polarity: NPN
- IC(max): 100
- VCEO: 45
- Package Type: SOT-563
from Win Source Electronics
Win Source Part Number: 1005637-SG2803L-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 50. Mounting: SMD (SMT). Voltage - Collector Emitter Breakdown (Max): 50V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 8 NPN... [See More]
- Polarity: NPN
- TJ: -55 to 125
- IC(max): 500
- Package Type: SOT3
from Rochester Electronics
Trans GP BJT NPN 32V 4A 3-Pin TO-225 Bulk [See More]
- Polarity: NPN
- Packing Method: Bulk; Bulk
- Package Type: TO-225
from RS Components, Ltd.
Silicon Transistor Plastic, BC817-16LT1G [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: SOT23; Sot-23
from New Yorker Electronics Co., Inc.
Transistor, NPN, 50V, 0.8A, TO-39 [See More]
- Polarity: NPN
- IC(max): 800
- VCEO: 50
- Package Type: TO-39; TO-39
from Win Source Electronics
Win Source Part Number: 1006864-SBC847BPDW1T3G. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 10,000. Mounting: SMD (SMT). Power - Max: 380mW. Voltage - Collector Emitter Breakdown (Max):... [See More]
- Polarity: NPN; PNP
- TJ: -55 to 150
- IC(max): 100
- Package Type: SOT3
from Rochester Electronics
Trans GP BJT NPN 40V 0.025A 3-Pin TO-92 [See More]
- Polarity: NPN
- Package Type: TO-92; TO-92
from RS Components, Ltd.
Transistr,Pwr NPN, Audio Drivr,MJE15032G [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: TO-220; To-220ab
from New Yorker Electronics Co., Inc.
Transistor, NPN, 0.8A, 75V, TO-18 [See More]
- Polarity: NPN
- IC(max): 800
- VCEO: 75
- Package Type: TO-18
from Win Source Electronics
Win Source Part Number: 1008883-SG2813J-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 21. Voltage - Collector Emitter Breakdown (Max): 50V. Current - Collector (Ic) (Max): 600mA. Transistor Type: 8 NPN Darlington. Vce... [See More]
- Polarity: NPN
- TJ: -55 to 125
- IC(max): 600
- Package Type: SOT3
from Rochester Electronics
Trans Digital BJT NPN 50V 100mA 3-Pin SC-59 T/R [See More]
- Polarity: NPN
- Package Type: CPH3
- IC(max): 100
- Packing Method: Tape Reel; Tape & Reel
from RS Components, Ltd.
NPN Si Epitaxial Transistor,BCP56-16T1G [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: SOT223; Sot-223
from New Yorker Electronics Co., Inc.
Transistor, NPN, 40V, 0.60A, TO-92 [See More]
- Polarity: NPN
- IC(max): 600
- VCEO: 40
- Package Type: TO-92; TO-92
from Win Source Electronics
Win Source Part Number: 1013476-SG2024J-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 1. Voltage - Collector Emitter Breakdown (Max): 95V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 7 NPN Darlington. Vce... [See More]
- Polarity: NPN
- TJ: -55 to 125
- IC(max): 500
- Package Type: SOT3
from Rochester Electronics
TRANSISTOR GP BJT NPN 150V 1A 3-PIN SOT-23 [See More]
- Polarity: NPN
- Package Type: SOT23; SOT-23-3
from RS Components, Ltd.
Bipolar Power DPAK NPN 8A 80V,MJD44H11G [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: TO-252 (DPAK); Dpak (to-252)
from New Yorker Electronics Co., Inc.
Transistor, NPN, 65V, 0.10A, SOT-23 [See More]
- Polarity: NPN
- IC(max): 100
- VCEO: 65
- Package Type: SOT23; SOT-23
from Win Source Electronics
Win Source Part Number: 1019168-SG2003L-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 50. Mounting: SMD (SMT). Voltage - Collector Emitter Breakdown (Max): 50V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 7 NPN... [See More]
- Polarity: NPN
- TJ: -55 to 125
- IC(max): 500
- Package Type: SOT3
from RS Components, Ltd.
Transistor Bipolar NPN 65V 6A DPAK [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: TO-252 (DPAK); Dpak (to-252)
from New Yorker Electronics Co., Inc.
Transistor, NPN, 45V, 0.10A, SOT-323 [See More]
- Polarity: NPN
- IC(max): 100
- VCEO: 45
- Package Type: SOT323; SOT-323
from Win Source Electronics
Win Source Part Number: 1021519-SG2823L-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 50. Mounting: SMD (SMT). Voltage - Collector Emitter Breakdown (Max): 95V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 8 NPN... [See More]
- Polarity: NPN
- TJ: -55 to 125
- IC(max): 500
- Package Type: SOT3
from RS Components, Ltd.
Transistor Bipolar NPN 80V 8A TO252 [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: TO-252 (DPAK); Dpak (to-252)
from New Yorker Electronics Co., Inc.
Transistor, NPN, 100 mA, 50V, SOT-883 [See More]
- Polarity: NPN
- IC(max): 100
- VCEO: 50
- Package Type: SOT-883
from Win Source Electronics
Win Source Part Number: 1024225-ULQ2001A. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tube. Standard Package: 2,000. Voltage - Collector Emitter Breakdown (Max): 50V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 7 NPN Darlington. Vce... [See More]
- Polarity: NPN
- TJ: 150
- IC(max): 500
- Package Type: SOT3
from RS Components, Ltd.
Transistor NPN 30V 3A 100MHz SOT32 [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: Sot-32
from New Yorker Electronics Co., Inc.
Transistor, NPN, 45V, 0.10A, SOT-523 [See More]
- Polarity: NPN
- IC(max): 100
- VCEO: 45
- Package Type: SOT-523
from Win Source Electronics
Win Source Part Number: 1028180-KSC5200OTU. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Bulk. Standard Package: 1. Power - Max: 130W. Voltage - Collector Emitter Breakdown (Max): 230V. Current - Collector (Ic) (Max): 13A. Transistor Type: NPN. Vce... [See More]
- Polarity: NPN
- TJ: 150
- IC(max): 13000
- Package Type: SOT3
from RS Components, Ltd.
Transistor NPN 450V 0.5A SOT-32 [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: Sot-32
from New Yorker Electronics Co., Inc.
Transistor, NPN, 1A, 45V, 100-250hFE,SOT-223 [See More]
- Polarity: NPN
- IC(max): 1000
- VCEO: 45
- Package Type: SOT223; SOT-223
from Win Source Electronics
Win Source Part Number: 1033310-SG2023L-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 50. Mounting: SMD (SMT). Voltage - Collector Emitter Breakdown (Max): 95V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 7 NPN... [See More]
- Polarity: NPN
- TJ: -55 to 125
- IC(max): 500
- Package Type: SOT3
from RS Components, Ltd.
Transistor NPN 700V 8A TO-247 [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: TO-247; To-247
from New Yorker Electronics Co., Inc.
Transistor, NPN, 40V, 0.2A, DFN1006-3L [See More]
- Polarity: NPN
- IC(max): 200
- VCEO: 40
- Package Type: DFN1006-3L
from Win Source Electronics
Win Source Part Number: 1048409-BC847BPN,125. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 300mW. Voltage - Collector Emitter Breakdown (Max):... [See More]
- Polarity: NPN; PNP
- TJ: 150
- IC(max): 100
- Package Type: SOT3
from RS Components, Ltd.
NPN transistor,BC846B 0.1A Ic 5Vce [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: SOT23; Sot-23
from New Yorker Electronics Co., Inc.
Transistor, NPN, 140V, 20.00A, TO-3 [See More]
- Polarity: NPN
- IC(max): 20000
- VCEO: 140
- Package Type: TO-3; TO-3
from Win Source Electronics
Win Source Part Number: 1048413-BC847QAPNZ. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 5,000. Mounting: SMD (SMT). Power - Max: 350mW. Voltage - Collector Emitter Breakdown (Max): 45V. [See More]
- Polarity: NPN; PNP
- TJ: 150
- IC(max): 100
- Package Type: SOT3
from RS Components, Ltd.
Transistor NPN 30V 100mA hfe200 SOT23 [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: SOT23; Sot-23
from New Yorker Electronics Co., Inc.
Transistor, NPN, 260V, 0.50A, TO-126 [See More]
- Polarity: NPN
- IC(max): 500
- VCEO: 260
- Package Type: TO-126
from Win Source Electronics
Win Source Part Number: 1079528-MMDT2227A_R1_00001. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 225mW, 200mW. Voltage - Collector Emitter Breakdown (Max): 40V, 60V. Current -... [See More]
- Polarity: NPN; PNP
- TJ: -55 to 150
- IC(max): 600
- Package Type: SOT3
from RS Components, Ltd.
NPN transistor,MMBT3904 0.2A Ic 1Vce [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: SOT23; Sot-23
from Win Source Electronics
Win Source Part Number: 1102390-UP04534G0L. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 8,000. Mounting: SMD (SMT). Power - Max: 125mW. Voltage - Collector Emitter Breakdown (Max): 20V. Current - Collector (Ic)... [See More]
- Polarity: NPN
- TJ: 125
- IC(max): 15
- Package Type: SOT3
from RS Components, Ltd.
NPN power transistor,15A TO-204 2N3055 [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: To-204aa
from Win Source Electronics
Win Source Part Number: 1108930-BCM847BS,115. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 300mW. Voltage - Collector Emitter Breakdown (Max): 45V. Current - Collector (Ic)... [See More]
- Polarity: NPN
- TJ: 150
- IC(max): 100
- Package Type: SOT3
from RS Components, Ltd.
Transistor NPN 80V 10A 70W TO220AB [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: TO-220; To-220ab
from Win Source Electronics
Win Source Part Number: 1109505-EMX26T2R. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 8,000. Mounting: SMD (SMT). Power - Max: 150mW. Voltage - Collector Emitter Breakdown (Max): 50V. Current - Collector (Ic) (Max):... [See More]
- Polarity: NPN
- TJ: 150
- IC(max): 150
- Package Type: SOT3
from RS Components, Ltd.
Transistor NPN 400V 8A SWITCHMODE TO220 [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: TO-220; To-220ab
from Win Source Electronics
Win Source Part Number: 1111978-BCM847BS-7. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max): 45V. [See More]
- Polarity: NPN
- TJ: -65 to 150
- IC(max): 100
- Package Type: SOT3
from RS Components, Ltd.
Transistor NPN 250V 16A 200W TO3BPL [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: To-3bpl
from Win Source Electronics
Win Source Part Number: 1115115-EMX1FHAT2R. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 8,000. Mounting: SMD (SMT). Power - Max: 150mW. Voltage - Collector Emitter Breakdown (Max): 50V. [See More]
- Polarity: NPN
- TJ: 150
- IC(max): 150
- Package Type: SOT3
from RS Components, Ltd.
PS NPN transistor,BC846B 0.1A Ic 5Vce [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: SOT23; Sot-23 (to-236ab)
from Win Source Electronics
Win Source Part Number: 1115671-BC847BPN_R1_00001. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max): 45V. Current - Collector... [See More]
- Polarity: NPN; PNP
- TJ: -55 to 150
- IC(max): 100
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from RS Components, Ltd.
NPN transistor,BC846BW 0.1A Ic 5Vce [See More]
- Polarity: NPN
- Number of units in IC: 1
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from Win Source Electronics
Win Source Part Number: 1119873-BC847BPN/ZLX. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 1. Mounting: SMD (SMT). Power - Max: 300mW. Voltage - Collector Emitter Breakdown (Max):... [See More]
- Polarity: NPN; PNP
- TJ: 150
- IC(max): 100
- Package Type: SOT3
from RS Components, Ltd.
NPN generalpurpose transistor,BC846 SST3 [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: SOT23; Sot-23 (to-236ab)
from Win Source Electronics
Win Source Part Number: 1120400-BC847BPDW1T3G. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 10,000. Mounting: SMD (SMT). Power - Max: 380mW. Voltage - Collector Emitter Breakdown (Max): 45V. Current - Collector (Ic)... [See More]
- Polarity: NPN; PNP
- TJ: -55 to 150
- IC(max): 100
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from RS Components, Ltd.
NPN/NPN transistor w/biasresistor,PUMH11 [See More]
- Polarity: NPN
- Number of units in IC: 2
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from Win Source Electronics
Win Source Part Number: 1124019-VT6X2T2R. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 8,000. Mounting: SMD (SMT). Power - Max: 150mW. Voltage - Collector Emitter Breakdown (Max): 50V. Current - Collector (Ic) (Max):... [See More]
- Polarity: NPN
- TJ: 150
- IC(max): 100
- Package Type: SOT3
from RS Components, Ltd.
Dual NPN transistor,BC847BS SOT363 100mA [See More]
- Polarity: NPN
- Number of units in IC: 2
- Package Type: Sot-363 (sc-88)
from Win Source Electronics
Win Source Part Number: 1160004-BC847DS,115. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 380mW. Voltage - Collector Emitter Breakdown (Max):... [See More]
- Polarity: NPN
- TJ: 150
- IC(max): 100
- Package Type: SOT3
from RS Components, Ltd.
PMST2222A NPN bipolar SMT transistor [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: Umt
from Win Source Electronics
Win Source Part Number: 1181436-SG2824J-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 21. Voltage - Collector Emitter Breakdown (Max): 95V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 8 NPN Darlington. Vce... [See More]
- Polarity: NPN
- TJ: -55 to 125
- IC(max): 500
- Package Type: SOT3
from RS Components, Ltd.
NPN Transistor 2A SOT23,PBSS4350T [See More]
- Polarity: NPN
- Number of units in IC: 1
- Package Type: SOT23; Sot-23 (to-236ab)
from Win Source Electronics
Win Source Part Number: 1199058-SG2821J-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 21. Voltage - Collector Emitter Breakdown (Max): 95V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 8 NPN Darlington. Vce... [See More]
- Polarity: NPN
- TJ: -55 to 125
- IC(max): 500
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from Utmel Electronic Limited
Bipolar Transistors - BJT 180V 1A NPN HI VLTGE LO VCESAT TRANSISTOR [See More]
- Polarity: NPN; NPN
- VCEO: 180
- Transistor Technology / Material: SILICON
- IC(max): 1000
from Semicoa
SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available in die form... [See More]
- Polarity: NPN
- VCEO: 15
- hfe: 200
- VCBO: 30
from PANJIT SemiConductor
Small signal bipolar junction transistor [See More]
- Polarity: NPN
- VCEO: 45
- hfe: 450
- IC(max): 100
from ROHM Semiconductor USA, LLC
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth. [See More]
- Polarity: NPN
- IC(max): 500
- VCEO: 12
- TJ: -55 to 150
from ROHM Semiconductor GmbH
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth. [See More]
- Polarity: NPN; PNP
- IC(max): -150
- VCEO: -50
- TJ: -55 to 150
from Karl Kruse GmbH & Co. KG
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]
- Polarity: NPN
from Linear Systems
The IT120A Series Monolithic Dual, NPN Transistor is a direct replacement for the Intersil IT120 Series. It is ideal for Small Signal Transistor Amplifier & Switching Applications. Available in PDIP 8L ROHS, TO-71 6L ROHS, TO-78 6L ROHS, SOIC 8L ROHS, and Tested Die. All Linear Systems devices... [See More]
- Polarity: NPN
- Package Type: TO-71
from TT Semiconductor, Inc.
The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the PNP devices (30 ohms for... [See More]
- Polarity: NPN
- VCEO: 36
- hfe: 60 to 100
- VCBO: 36 to 40
from MACOM
MACOMs product portfolio of high reliability semiconductors for the military, defense, satellite and aerospace industries includes: Rectifiers, Switching diodes, Zener diodes, Temperature compensated zeners, Current regulators, Transient voltage suppressors, Silicon controlled rectifiers, Small... [See More]
- Polarity: NPN
- VCEO: 30 to 80
- hfe: 35 to 800
- VCBO: 60 to 140
from Utmel Electronic Limited
Bipolar Transistors - BJT 200mW Half H-Bridge [See More]
- Polarity: NPN; PNP; NPN, PNP
- VCEO: 60
- Transistor Technology / Material: SILICON
- IC(max): 600
from ROHM Semiconductor USA, LLC
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth. [See More]
- Polarity: NPN; PNP
- IC(max): -150
- VCEO: -50
- TJ: -55 to 150
from ROHM Semiconductor GmbH
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth. [See More]
- Polarity: NPN; PNP
- IC(max): -500
- VCEO: -12
- TJ: -55 to 150
from Utmel Electronic Limited
Bipolar Transistors - BJT 20V NPN SuperSOT4 [See More]
- Polarity: NPN; NPN
- VCEO: 20
- Transistor Technology / Material: SILICON
- IC(max): 4500
from Utmel Electronic Limited
Bipolar Transistors - BJT BIP NPN 5A 50V [See More]
- Polarity: NPN; NPN
- VCEO: 50
- Transistor Technology / Material: SILICON
- IC(max): 5000
from Utmel Electronic Limited
Bipolar Transistors - BJT BIPLR PW TRANS FLAT LEAD 4.5x4.0mm [See More]
- Polarity: NPN; NPN
- VCEO: 50
- Transistor Technology / Material: SILICON
- IC(max): 2000
from Utmel Electronic Limited
Bipolar Transistors - BJT BIPOLAR TRANSISTOR NPN [See More]
- Polarity: NPN; NPN
- VCEO: 15
- Transistor Technology / Material: SILICON
- IC(max): 5000
from Utmel Electronic Limited
Bipolar Transistors - BJT Comp Dual [See More]
- Polarity: NPN; PNP; NPN, PNP
- VCEO: 12
- Transistor Technology / Material: SILICON
- IC(max): 1250
from Utmel Electronic Limited
Bipolar Transistors - BJT H-Bridge-40V [See More]
- Polarity: NPN; PNP; NPN, PNP
- VCEO: 40
- Transistor Technology / Material: SILICON
- IC(max): 2000
from Utmel Electronic Limited
Bipolar Transistors - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor [See More]
- Polarity: NPN; NPN
- VCEO: 400
- Transistor Technology / Material: SILICON
- IC(max): 4000
from Utmel Electronic Limited
Bipolar Transistors - BJT NPN 1W [See More]
- Polarity: NPN; PNP; PNP
- VCEO: 50
- Transistor Technology / Material: SILICON
- IC(max): 3000
from Utmel Electronic Limited
Bipolar Transistors - BJT NPN 230V 15A [See More]
- Polarity: NPN; NPN
- VCEO: 230
- Transistor Technology / Material: SILICON
- IC(max): 15000
from Utmel Electronic Limited
Bipolar Transistors - BJT NPN Ampl/Switch [See More]
- Polarity: NPN; NPN
- IC(max): 1000
- VCEO: 65
- PD: 1000
from Utmel Electronic Limited
Bipolar Transistors - BJT NPN BIPOLAR [See More]
- Polarity: NPN; NPN
- VCEO: 50
- Transistor Technology / Material: SILICON
- IC(max): 150
from Utmel Electronic Limited
Bipolar Transistors - BJT NPN BIPOLAR [See More]
- Polarity: NPN; NPN
- VCEO: 45
- Transistor Technology / Material: SILICON
- IC(max): 100
from Utmel Electronic Limited
Bipolar Transistors - BJT NPN Epitaxial Sil [See More]
- Polarity: NPN; NPN
- IC(max): 500
- VCEO: 160
- PD: 20000
from Utmel Electronic Limited
Bipolar Transistors - BJT NPN Epitaxial Sil [See More]
- Polarity: NPN; NPN
- VCEO: 60
- Transistor Technology / Material: SILICON
- IC(max): 4000
from Utmel Electronic Limited
Bipolar Transistors - BJT NPN Epitaxial Sil Short Leads [See More]
- Polarity: NPN; NPN
- VCEO: 150
- Transistor Technology / Material: SILICON
- IC(max): 1500
from Utmel Electronic Limited
Bipolar Transistors - BJT NPN Epitaxial Transistor [See More]
- Polarity: NPN; NPN
- VCEO: 50
- Transistor Technology / Material: SILICON
- IC(max): 150
from Utmel Electronic Limited
Bipolar Transistors - BJT NPN Epitaxial Transistor [See More]
- Polarity: NPN; NPN
- VCEO: 140
- Transistor Technology / Material: SILICON
- IC(max): 700
from Utmel Electronic Limited
Bipolar Transistors - BJT NPN Epitaxial Transistor [See More]
- Polarity: NPN; NPN
- VCEO: 30
- Transistor Technology / Material: SILICON
- IC(max): 2000
from Utmel Electronic Limited
Bipolar Transistors - BJT NPN Epitaxial Transistor [See More]
- Polarity: NPN; NPN
- VCEO: 160
- Transistor Technology / Material: SILICON
- IC(max): 1000
from Utmel Electronic Limited
Bipolar Transistors - BJT NPN Gen Pur SS [See More]
- Polarity: NPN; NPN
- IC(max): 500
- VCEO: 50
- PD: 3000
from Utmel Electronic Limited
Bipolar Transistors - BJT NPN Gen Pur SS [See More]
- Polarity: NPN; NPN
- IC(max): 50
- VCEO: 30
- PD: 625
from Utmel Electronic Limited
Bipolar Transistors - BJT NPN General Purpose [See More]
- Polarity: NPN; NPN
- VCEO: 80
- Transistor Technology / Material: SILICON
- IC(max): 500
from Utmel Electronic Limited
Bipolar Transistors - BJT NPN GP Amp [See More]
- Polarity: NPN; NPN
- IC(max): 10000
- VCEO: 80
- PD: 150000