NPN Small-Signal Bipolar Transistors (BJT)

Last Updated: January 16, 2025 Reviewed by: Jon Lowy, consulting engineer

Description

NPN Small-Signal Bipolar Transistors (BJTs) are three-layer semiconductor devices consisting of two N-type regions separated by a thin P-type region. These transistors function as current-controlled current amplifiers, capable of amplifying weak electrical signals while maintaining signal fidelity. They operate with relatively low power and voltage requirements, typically handling currents below 100mA and voltages under 40V.

Working Principle

NPN BJTs operate through the controlled movement of charge carriers across semiconductor junctions. When a small positive voltage is applied to the base-emitter junction, it becomes forward-biased, allowing electrons to flow from the emitter to the base. Since the base region is very thin and lightly doped, only a small fraction of these electrons recombine with holes in the base. The majority of electrons are swept across the reverse-biased base-collector junction by the electric field present there. This creates a much larger collector current that is proportional to the base current, resulting in current amplification. The ratio of collector current to base current, known as current gain (ß or hFE), typically ranges from 100 to 300 in small-signal transistors.

Applications

NPN small-signal BJTs are extensively used in audio frequency preamplifiers for microphones and musical instruments, where they provide clean signal amplification with minimal noise. They're crucial components in FM radio receivers, particularly in RF and IF amplification stages. In industrial sensors, these transistors are employed in temperature measurement circuits, light detection systems, and proximity sensors. They're also found in analog computational circuits, servo motor control systems, and in the input stages of operational amplifiers. Modern smartphone audio circuits still utilize these transistors in their headphone amplifier stages due to their excellent linear response characteristics.

Limitations

NPN small-signal BJTs exhibit several significant limitations. They suffer from temperature sensitivity, with their gain characteristics changing approximately -2mV/°C, which can lead to stability issues in precision circuits. Their frequency response is limited by internal capacitances, typically restricting operation to frequencies below 100MHz in general-purpose devices. These transistors also display a phenomenon called thermal runaway, where increased temperature leads to higher collector current, which in turn causes further heating. Additionally, they're susceptible to noise, particularly at low current levels, and their gain characteristics can vary significantly between individual devices, even within the same manufacturing batch.

Considerations

When implementing NPN small-signal BJTs, initial costs are relatively low, typically ranging from $0.10 to $1.00 per unit in moderate quantities. However, the total cost of implementation must include consideration for additional biasing components and temperature compensation circuits. While these devices are generally reliable with a typical lifetime of 15-20 years under normal operating conditions, they require careful attention to thermal management and operating point stability. Replacement costs are minimal, but the labor involved in desoldering and resoldering surface-mount devices can be significant. Operating expenses are negligible due to their low power consumption, typically less than 100mW per device. Regular maintenance isn't required, but periodic testing of bias points is recommended in precision applications.

102 Results

Custom Parts - Custom Parts (0 - A) - 2N720AJAN -- 1174974-2N720AJAN - Image

Custom Parts - Custom Parts (0 - A) - 2N720AJAN -- 1174974-2N720AJAN [2N720AJAN from Microchip Technology, Inc.]
from Win Source Electronics

Manufacturer: Microchip Technology. Storage Condition: Dry storage cabinet & Humidity protection package. Win Source Part Number: 1174974-2N720AJAN. Polarity: NPN. Number of Elements: 1. Power Dissipation: 500 mW. Number of Pins: 3. Categories: Custom Parts. Case / Package: TO-18. Popularity:... [See More]

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1013476-SG2024J-883B [SG2024J-883B from Microchip Technology, Inc.]
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Polarity: NPN
Number of units in IC: 1

Package Type: TO-220; To-220ab

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1111978-BCM847BS-7 - Image

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1111978-BCM847BS-7 [BCM847BS-7 from DIODES Incorporated]
from Win Source Electronics

Win Source Part Number: 1111978-BCM847BS-7. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max): 45V. [See More]

Polarity: NPN
T_J: -65 to 150

I_C(max): 100
Package Type: SOT3

Bipolar Transistors -- 1035142 [MJE13007G from onsemi]
from RS Components, Ltd.

Transistor NPN 400V 8A SWITCHMODE TO220 [See More]

Polarity: NPN
Number of units in IC: 1

Package Type: TO-220; To-220ab

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1115115-EMX1FHAT2R - Image

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1115115-EMX1FHAT2R [EMX1FHAT2R from ROHM Semiconductor USA, LLC]
from Win Source Electronics

Win Source Part Number: 1115115-EMX1FHAT2R. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 8,000. Mounting: SMD (SMT). Power - Max: 150mW. Voltage - Collector Emitter Breakdown (Max): 50V. [See More]

Polarity: NPN
T_J: 150

I_C(max): 150
Package Type: SOT3

Bipolar Transistors -- 1035143 [MJL21194G from onsemi]
from RS Components, Ltd.

Transistor NPN 250V 16A 200W TO3BPL [See More]

Polarity: NPN
Number of units in IC: 1

Package Type: To-3bpl

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1115671-BC847BPN_R1_00001 - Image

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1115671-BC847BPN_R1_00001 [BC847BPN_R1_00001 from PANJIT SemiConductor]
from Win Source Electronics

Win Source Part Number: 1115671-BC847BPN_R1_00001. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max): 45V. Current - Collector... [See More]

Polarity: NPN; PNP
T_J: -55 to 150

I_C(max): 100
Package Type: SOT3

Bipolar Transistors -- 1035677 [BC846B,215 from Nexperia B.V.]
from RS Components, Ltd.

PS NPN transistor,BC846B 0.1A Ic 5Vce [See More]

Polarity: NPN
Number of units in IC: 1

Package Type: SOT23; Sot-23 (to-236ab)

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1119873-BC847BPN/ZLX - Image

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1119873-BC847BPN/ZLX [BC847BPN/ZLX from Nexperia B.V.]
from Win Source Electronics

Win Source Part Number: 1119873-BC847BPN/ZLX. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 1. Mounting: SMD (SMT). Power - Max: 300mW. Voltage - Collector Emitter Breakdown (Max):... [See More]

Polarity: NPN; PNP
T_J: 150

I_C(max): 100
Package Type: SOT3

Bipolar Transistors -- 1035678 [BC846BW from Nexperia B.V.]
from RS Components, Ltd.

NPN transistor,BC846BW 0.1A Ic 5Vce [See More]

Polarity: NPN
Number of units in IC: 1

Package Type: Umt

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1120400-BC847BPDW1T3G - Image

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1120400-BC847BPDW1T3G [BC847BPDW1T3G from onsemi]
from Win Source Electronics

Win Source Part Number: 1120400-BC847BPDW1T3G. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 10,000. Mounting: SMD (SMT). Power - Max: 380mW. Voltage - Collector Emitter Breakdown (Max): 45V. Current - Collector (Ic)... [See More]

Polarity: NPN; PNP
T_J: -55 to 150

I_C(max): 100
Package Type: SOT3

Bipolar Transistors -- 1035698 [BC846,215 from Nexperia B.V.]
from RS Components, Ltd.

NPN generalpurpose transistor,BC846 SST3 [See More]

Polarity: NPN
Number of units in IC: 1

Package Type: SOT23; Sot-23 (to-236ab)

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1124019-VT6X2T2R - Image

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1124019-VT6X2T2R [VT6X2T2R from ROHM Semiconductor USA, LLC]
from Win Source Electronics

Win Source Part Number: 1124019-VT6X2T2R. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 8,000. Mounting: SMD (SMT). Power - Max: 150mW. Voltage - Collector Emitter Breakdown (Max): 50V. Current - Collector (Ic) (Max):... [See More]

Polarity: NPN
T_J: 150

I_C(max): 100
Package Type: SOT3

Bipolar Transistors -- 1037548 [PUMH11,115 from Nexperia B.V.]
from RS Components, Ltd.

NPN/NPN transistor w/biasresistor,PUMH11 [See More]

Polarity: NPN
Number of units in IC: 2

Package Type: Umt

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1160004-BC847DS,115 - Image

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1160004-BC847DS,115 [BC847DS,115 from Nexperia B.V.]
from Win Source Electronics

Win Source Part Number: 1160004-BC847DS,115. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 380mW. Voltage - Collector Emitter Breakdown (Max):... [See More]

Polarity: NPN
T_J: 150

I_C(max): 100
Package Type: SOT3

Bipolar Transistors -- 1037551 [BC847BS from Nexperia B.V.]
from RS Components, Ltd.

Dual NPN transistor,BC847BS SOT363 100mA [See More]

Polarity: NPN
Number of units in IC: 2

Package Type: Sot-363 (sc-88)

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1181436-SG2824J-883B - Image

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1181436-SG2824J-883B [SG2824J-883B from Microchip Technology, Inc.]
from Win Source Electronics

Win Source Part Number: 1181436-SG2824J-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 21. Voltage - Collector Emitter Breakdown (Max): 95V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 8 NPN Darlington. Vce... [See More]

Polarity: NPN
T_J: -55 to 125

I_C(max): 500
Package Type: SOT3

Bipolar Transistors -- 1037563 [PMST2222A,115 from Nexperia B.V.]
from RS Components, Ltd.

PMST2222A NPN bipolar SMT transistor [See More]

Polarity: NPN
Number of units in IC: 1

Package Type: Umt

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1199058-SG2821J-883B - Image

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1199058-SG2821J-883B [SG2821J-883B from Microchip Technology, Inc.]
from Win Source Electronics

Win Source Part Number: 1199058-SG2821J-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 21. Voltage - Collector Emitter Breakdown (Max): 95V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 8 NPN Darlington. Vce... [See More]

Polarity: NPN
T_J: -55 to 125

I_C(max): 500
Package Type: SOT3

Bipolar Transistors -- 1037565 [PBSS4350T from Nexperia B.V.]
from RS Components, Ltd.

NPN Transistor 2A SOT23,PBSS4350T [See More]

Polarity: NPN
Number of units in IC: 1

Package Type: SOT23; Sot-23 (to-236ab)

Small Signal Bipolar Junction Transistor -- BC847BS
from PANJIT SemiConductor

Small signal bipolar junction transistor [See More]

Polarity: NPN
V_CEO: 45

h_fe: 450
I_C(max): 100

Hi-Rel NPN RAD Hard Small Signal Transistors - Image

Hi-Rel NPN RAD Hard Small Signal Transistors
from MACOM

MACOMs product portfolio of high reliability semiconductors for the military, defense, satellite and aerospace industries includes: Rectifiers, Switching diodes, Zener diodes, Temperature compensated zeners, Current regulators, Transient voltage suppressors, Silicon controlled rectifiers, Small... [See More]

Polarity: NPN
V_CEO: 30 to 80

h_fe: 35 to 800
V_CBO: 60 to 140

Bipolar Transistor -- 2N0918
from Semicoa

SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available in die form... [See More]

Polarity: NPN
V_CEO: 15

h_fe: 200
V_CBO: 30

Matched Transistor Array -- TT1300D - Image

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Matched Transistor Array -- TT1300D
from TT Semiconductor, Inc.

The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the PNP devices (30 ohms for... [See More]

Polarity: NPN
V_CEO: 36

h_fe: 60 to 100
V_CBO: 36 to 40

NPN Low VCE(sat) Transistor + NPN Digital transistor -- EMF8 - Image

NPN Low VCE(sat) Transistor + NPN Digital transistor -- EMF8
from ROHM Semiconductor USA, LLC

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth. [See More]

Polarity: NPN
I_C(max): 500

V_CEO: 12
T_J: -55 to 150

0 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-9 -- KSC838C-0-TA(BF240)-GEG - Image

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0 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-9 -- KSC838C-0-TA(BF240)-GEG
from Karl Kruse GmbH & Co. KG

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]

Polarity: NPN

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Bipolar Transistors -- IT121
from Linear Systems

The IT120A Series Monolithic Dual, NPN Transistor is a direct replacement for the Intersil IT120 Series. It is ideal for Small Signal Transistor Amplifier & Switching Applications. Available in PDIP 8L ROHS, TO-71 6L ROHS, TO-78 6L ROHS, SOIC 8L ROHS, and Tested Die. All Linear Systems devices... [See More]