PNP Small-Signal Bipolar Transistors (BJT)

PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PMBS3904. Features and benefits. 100 mA collector current capability. Applications. General-purpose switching and amplification [See More]

• Polarity: PNP
• V_CEO: -40

• h_fe: 100 to 300
• I_C(max): -100

Win Source Part Number: 1006864-SBC847BPDW1T3G. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 10,000. Mounting: SMD (SMT). Power - Max: 380mW. Voltage - Collector Emitter Breakdown (Max):... [See More]

• Polarity: NPN; PNP
• T_J: -55 to 150

• I_C(max): 100
• Package Type: SOT3

2N5194 - Transistor GP BJT PNP 60V 4A 3-Pin TO-225 Bulk [See More]

• Polarity: PNP
• Packing Method: Bulk; Bulk

• Package Type: TO-225

TRANS PNP 12V 1A MCPH3 [See More]

• Polarity: PNP
• I_C(max): 1000

• V_CEO: 12
• T_J: 150

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth. [See More]

• Polarity: NPN; PNP
• I_C(max): -150

• V_CEO: -50
• T_J: -55 to 150

Pwr 3A 100V Discrete PNP, MJD32CT4G - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: PNP
• V_CBO: 100

• V_CEO: 100
• I_C(max): 3000

PNP general-purpose transistors in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. Features and benefits. Leadless ultra small SMD plastic package. Low package height of 0.37 mm. Power dissipation comparable to SOT23. AEC-Q101 qualified. Applications. [See More]

• Polarity: PNP
• V_CEO: -40

• h_fe: 120 to 270
• I_C(max): -100

Win Source Part Number: 1048409-BC847BPN,125. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 300mW. Voltage - Collector Emitter Breakdown (Max):... [See More]

• Polarity: NPN; PNP
• T_J: 150

• I_C(max): 100
• Package Type: SOT3

Trans GP BJT PNP 30V 0.1A 3-Pin TO-92 Box [See More]

• Polarity: PNP
• Packing Method: Bulk; Bulk

• Package Type: TO-92; TO-92

TRANS PNP 32V 2A SOT89-3 [See More]

• Polarity: PNP
• I_C(max): 2000

• V_CEO: 32
• T_J: -55 to 150

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth. [See More]

• Polarity: NPN; PNP
• I_C(max): -500

• V_CEO: -12
• T_J: -55 to 150

4A PNP Power,Audio Driver, MJE15035G - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: PNP
• V_CBO: 350

• V_CEO: 350
• I_C(max): 4000

PNP/PNP general-purpose double transistor in a SOT363 (SC-88) a very small Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PMBT3904YS. NPN/PNP complement: PMBT3946YPN. Features and benefits. General-purpose double transistor. Board-space reduction. AEC-Q101 qualified. Applications. [See More]

• Polarity: PNP
• V_CEO: -40

• h_fe: 100 to 300
• I_C(max): -200

Win Source Part Number: 1048413-BC847QAPNZ. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 5,000. Mounting: SMD (SMT). Power - Max: 350mW. Voltage - Collector Emitter Breakdown (Max): 45V. [See More]

• Polarity: NPN; PNP
• T_J: 150

• I_C(max): 100
• Package Type: SOT3

Trans GP BJT PNP 45V 0.5A 3-Pin SOT-23 T/R [See More]

• Polarity: PNP
• Packing Method: Tape Reel; Tape & Reel

• Package Type: SOT23; SOT-23-3

T-PNP SI- AF OUTPUT [See More]

• Polarity: PNP
• I_C(max): 600

• V_CEO: 60
• T_J: -55 to 150

Power 10A 80V PLA PNP, MJD45H11T4G - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: PNP
• I_C(max): 8000

• V_CEO: 80
• P_D: 1750

NPN general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Features and benefits. High power dissipation capability. Suitable for Automatic Optical Inspection (AOI) of solder joint. Smaller footprint compared... [See More]

• Polarity: NPN; PNP
• V_CEO: 65

• h_fe: 110 to 220
• I_C(max): 100

Win Source Part Number: 1048426-BC856SF. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 10,000. Mounting: SMD (SMT). Power - Max: 400mW. Voltage - Collector Emitter Breakdown (Max):... [See More]

• Polarity: PNP
• T_J: 150

• I_C(max): 100
• Package Type: SOT3

Trans GP BJT NPN/PNP 30V 0.1A 6-Pin SOT-363 T/R [See More]

• Polarity: NPN; PNP

• Package Type: SC-70-6

TRANS PNP 60V 0.6A [See More]

• Polarity: PNP
• I_C(max): 600

• V_CEO: 60
• T_J: -65 to 200

Transistor,PNP Pwr,AUDIO Drivr,MJE15033G - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: PNP
• V_CBO: 250

• V_CEO: 250
• I_C(max): 8000

PNP general-purpose transistor in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package. NPN complement: BC847AM. Features and benefits. Leadless ultra small SMD plastic package. Power dissipation comparable to SOT23. Board space 1.3 × 0.9 mm. AEC-Q101... [See More]

• Polarity: PNP
• V_CEO: -45

• h_fe: 125 to 250
• I_C(max): -100

Win Source Part Number: 1079528-MMDT2227A_R1_00001. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 225mW, 200mW. Voltage - Collector Emitter Breakdown (Max): 40V, 60V. Current -... [See More]

• Polarity: NPN; PNP
• T_J: -55 to 150

• I_C(max): 600
• Package Type: SOT3

BCP5316H - Trans BJTs PNP 80V 1A [See More]

• Polarity: PNP
• Packing Method: Tape Reel; Tape & Reel

• Package Type: PG-SOT223-4

TRANS PNP 40V 200MA TO92-3 [See More]

• Polarity: PNP
• I_C(max): 200

• V_CEO: 40
• T_J: -55 to 150

350V Audio Transistor, PNP, MJL4302AG - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: PNP
• V_CBO: 350

• V_CEO: 350
• I_C(max): 15000

PNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and soldarable side pads. Features and benefits. General-purpose transistors. Three current gain selections. Low package height of 0.37 mm. Suitable for Automatic... [See More]

• Polarity: PNP
• V_CEO: -45

• h_fe: 125 to 250
• I_C(max): -100

Win Source Part Number: 1079529-MMDT2907AQ-7-F. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel (TR). Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max): 60V. Current - Collector... [See More]

• Polarity: PNP
• T_J: -55 to 150

• I_C(max): 600
• Package Type: SOT3

Trans GP BJT PNP 80V 10A 3-Pin(3+Tab) TO-220AB Rail [See More]

• Polarity: PNP
• Packing Method: Tube; Tube

• Package Type: TO-220; TO-220AB

TRANS PNP 150V 600MA TO92-3 [See More]

• Polarity: PNP
• I_C(max): 600

• V_CEO: 150
• T_J: -55 to 150

Transistor Bipolar PNP 80V 1.5A SOT32 - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: PNP
• V_CBO: 80

• V_CEO: 80
• I_C(max): 1500

PNP general-purpose transistor in an ultra small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Features and benefits. High power dissipation capability. Suitable for Automatic Optical Inspection (AOI) of solder joint. Smaller footprint compared... [See More]

• Polarity: NPN; PNP
• V_CEO: -45

• h_fe: 125 to 250
• I_C(max): -100

Win Source Part Number: 1085643-PMBT3906YS,115. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 350mW. Voltage - Collector Emitter Breakdown... [See More]

• Polarity: PNP
• T_J: 150

• I_C(max): 200
• Package Type: SOT3

MPQ6100 - Trans GP BJT NPN/PNP 45V 0.05A 14-Pin CDIP [See More]

• Polarity: NPN; PNP
• Packing Method: Tube; Tube

• Package Type: CDIP

TRANS PNP 50V 150MA SOT323 [See More]

• Polarity: PNP
• I_C(max): 150

• V_CEO: 50
• T_J: 150

Transistor Bipolar PNP 80V 8A DPAK - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: PNP
• V_CBO: 80

• V_CEO: 80
• I_C(max): 8000

PNP/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC847RA. NPN/PNP complement: BC847RAPN. Features and benefits. Reduces component count. Reduces pick and place costs. Low package height of 0.5... [See More]

• Polarity: PNP
• V_CEO: -45

• h_fe: 200 to 450
• I_C(max): -100

Win Source Part Number: 1086362-PUMT1,115. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 300mW. Voltage - Collector Emitter Breakdown (Max): 40V. Current - Collector (Ic) (Max):... [See More]

• Polarity: PNP
• T_J: 150

• I_C(max): 100
• Package Type: SOT3

MSB709 - Trans GP BJT PNP 45V 0.1A 3-Pin SC-59 [See More]

• Polarity: PNP

• Package Type: CPH3

TRANS PNP 50V 0.15A SOT323 [See More]

• Polarity: PNP
• I_C(max): 150

• V_CEO: 50
• T_J: 150

Transistor PNP 65V 100mA hfe220 SOT23 - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: PNP
• V_CBO: 80

• V_CEO: 65
• I_C(max): 100

PNP/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. Features and benefits. Reduces component count. Reduces pick and place costs. AEC-Q101 qualified. Low package height of 0.37 mm. Applications. General-purpose switching and... [See More]

• Polarity: PNP
• V_CEO: -45

• h_fe: 200 to 450
• I_C(max): -100

Win Source Part Number: 1096258-SSM2220P. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tube. Standard Package: 50. Voltage - Collector Emitter Breakdown (Max): 36V. Current - Collector (Ic) (Max): 20mA. Transistor Type: 2 PNP (Dual). Vce Saturation... [See More]

• Polarity: PNP
• T_J: -65 to 150

• I_C(max): 20
• Package Type: SOT3

N-Channel MOSFET 20 V, 224 mA with Small Signal PNP BJT, 30 V, 500 mA [See More]

• Polarity: PNP
• Package Type: UFDFN6

• I_C(max): 224
• Packing Method: Tape Reel; Tape & Reel

TRANS PNP 50V 150MA SOT323 [See More]

• Polarity: PNP
• I_C(max): 150

• V_CEO: 50
• T_J: 150

PNP power transistor,MJE15031 8A - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: PNP
• V_CBO: 150

• V_CEO: 150
• I_C(max): 8000

PNP general-purpose transistors in a small SOT23 (TO-236AB) or SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. . Features and benefits. High current. Three current gain selections. AEC-Q101 qualified. Applications. General-purpose switching and amplification [See More]

• Polarity: PNP
• V_CEO: -45

• h_fe: 100 to 250
• I_C(max): -500

Win Source Part Number: 1106496-BC857BS,135. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 10,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max):... [See More]

• Polarity: PNP
• T_J: 150

• I_C(max): 100
• Package Type: SOT3

Digital BJT 2 PNP - Pre-Biased (Dual) 50V 100mA 350mW 6-SON T/R [See More]

• Polarity: PNP
• Package Type: SOT1216

• I_C(max): 100
• Packing Method: Tape Reel; Tape & Reel

TRANS PNP 40V 100MA DFN1006-3 [See More]

• Polarity: PNP
• I_C(max): 100

• V_CEO: 40
• T_J: 150

PNP power transistor,D45H11 10A - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: PNP
• I_C(max): 10000

• V_CEO: 80
• P_D: 2000

PNP general-purpose double transistor in a small SOT143B Surface-Mounted. Device (SMD) plastic package. Features and benefits. Low current (max. 100 mA). Low voltage (max. 30 and 6 V). AEC-Q101 qualified. Small SMD plastic package. Applications. General purpose switching and amplification. For use... [See More]

• Polarity: PNP
• V_CEO: -30

• h_fe: 220 to 475
• I_C(max): -100

Win Source Part Number: 1112673-MMDT4403-TP. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max): 40V. Current - Collector (Ic)... [See More]

• Polarity: PNP
• T_J: -55 to 150

• I_C(max): 600
• Package Type: SOT3

TRANS PNP 40V 100MA DFN1006-3 [See More]

• Polarity: PNP
• I_C(max): 100

• V_CEO: 40
• T_J: 150

Transistor PNP 80V 15A 83W TO220AB - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: PNP
• I_C(max): 15000

• V_CEO: 80
• P_D: 83000

Win Source Part Number: 1115671-BC847BPN_R1_00001. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max): 45V. Current - Collector... [See More]

• Polarity: NPN; PNP
• T_J: -55 to 150

• I_C(max): 100
• Package Type: SOT3

TRANS PNP 50V 0.5A SOT323 [See More]

• Polarity: PNP
• I_C(max): 500

• V_CEO: 50
• T_J: 150

PNP transistor,BCX53-16 1A - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: PNP
• V_CBO: 100

• V_CEO: 80
• I_C(max): 1000

Win Source Part Number: 1119873-BC847BPN/ZLX. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 1. Mounting: SMD (SMT). Power - Max: 300mW. Voltage - Collector Emitter Breakdown (Max):... [See More]

• Polarity: NPN; PNP
• T_J: 150

• I_C(max): 100
• Package Type: SOT3

TRANS PNP 20V 3A SOT89 [See More]

• Polarity: PNP
• I_C(max): 3000

• V_CEO: 20
• T_J: 150

General purposetransistor,BC807-40 SOT23 - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: PNP
• V_CBO: 50

• V_CEO: 45
• I_C(max): 500

Win Source Part Number: 1120400-BC847BPDW1T3G. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 10,000. Mounting: SMD (SMT). Power - Max: 380mW. Voltage - Collector Emitter Breakdown (Max): 45V. Current - Collector (Ic)... [See More]

• Polarity: NPN; PNP
• T_J: -55 to 150

• I_C(max): 100
• Package Type: SOT3

2PB709A - 45 V, 100 MA PNP GENER [See More]

• Polarity: PNP
• I_C(max): 100

• V_CEO: 45
• T_J: 150

NPN/PNP transistor,BC847BPN UMT6 100mA - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: NPN; PNP
• V_CBO: 50

• V_CEO: 45
• I_C(max): 100

Win Source Part Number: 1122229-DMA502010R. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 150mW. Voltage - Collector Emitter Breakdown (Max): 50V. Current - Collector (Ic)... [See More]

• Polarity: PNP
• T_J: 150

• I_C(max): 100
• Package Type: SOT3

TRANS PNP 45V 100MA TO236AB [See More]

• Polarity: PNP
• I_C(max): 100

• V_CEO: 45
• T_J: 150

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in... [See More]

• Polarity: PNP
• V_CBO: 20

• V_CEO: 20
• I_C(max): 5000

Win Source Part Number: 1141661-CMKT2907AG TR PBFREE. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 350mW. Voltage - Collector Emitter Breakdown (Max): 60V. Current - Collector... [See More]

• Polarity: PNP
• T_J: -65 to 150

• I_C(max): 600
• Package Type: SOT3

TRANS PNP 45V 100MA TO236AB [See More]

• Polarity: PNP
• I_C(max): 100

• V_CEO: 45
• T_J: 150

BJT,PNP,65V,100mA,SC-75 - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: PNP
• V_CBO: -50

• V_CEO: 45
• I_C(max): 100

Win Source Part Number: 1152359-BC857BV,115. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 4,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max): 45V. [See More]

• Polarity: PNP
• T_J: 150

• I_C(max): 100
• Package Type: SOT3

TRANS PNP 50V 200MA TO236AB [See More]

• Polarity: PNP
• I_C(max): 200

• V_CEO: 50
• T_J: 150

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors... [See More]

• Polarity: NPN; PNP
• V_CBO: 80

• V_CEO: 60
• I_C(max): 1000

Win Source Part Number: 1157643-HN3A51F(TE85L,F). Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 300mW. Voltage - Collector Emitter Breakdown (Max): 120V. Current - Collector... [See More]

• Polarity: PNP
• T_J: 150

• I_C(max): 100
• Package Type: SOT3

TRANS PNP 50V 500MA TO236AB [See More]

• Polarity: PNP
• I_C(max): 500

• V_CEO: 50
• T_J: 150

PNP bipolar RF BFT92 5GHz - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: PNP
• V_CBO: 20

• V_CEO: 15
• I_C(max): 25

Win Source Part Number: 1170580-CMLT3906EG TR PBFREE. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 150mW. Voltage - Collector Emitter Breakdown (Max): 40V. Current - Collector... [See More]

• Polarity: PNP
• T_J: -65 to 150

• I_C(max): 200
• Package Type: SOT3

TRANS PNP 50V 0.5A SOT-23 [See More]

• Polarity: PNP
• I_C(max): 500

• V_CEO: 50
• T_J: 150

PNP transistor,BC807-25 0.5A - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: PNP
• V_CBO: 50

• V_CEO: 45
• I_C(max): 500

Win Source Part Number: 1177148-2N5796U. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Bulk. Standard Package: 120. Mounting: SMD (SMT). Power - Max: 600mW. Voltage - Collector Emitter Breakdown (Max): 60V. Current - Collector (Ic) (Max): 600mA. [See More]

• Polarity: PNP
• T_J: -65 to 200

• I_C(max): 600
• Package Type: SOT3

TRANS PNP 50V 0.15A SOT-346 [See More]

• Polarity: PNP
• I_C(max): 150

• V_CEO: 50
• T_J: 150

PNP power transistor,BD438 4A - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: PNP
• V_CBO: 45

• V_CEO: 45
• I_C(max): 4000

Win Source Part Number: 1201248-MMDT3906TB6_R1_00001. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 4,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max): 40V. Current - Collector... [See More]

• Polarity: PNP
• T_J: -55 to 150

• I_C(max): 200
• Package Type: SOT3

TRANS PNP 50V 0.15A SOT-346 [See More]

• Polarity: PNP
• I_C(max): 150

• V_CEO: 50
• T_J: 150

Transistor PNP 5A 60V Fast DPAK - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: PNP
• I_C(max): 5000

• V_CEO: 60
• P_D: 15000

Win Source Part Number: 1206076-JANS2N3810U/TR. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Military, MIL-PRF-19500/336. Package: Tape & Reel (TR). Standard Package: 1. Mounting: SMD (SMT). Power - Max: 350mW. Voltage - Collector Emitter Breakdown... [See More]

• Polarity: PNP
• T_J: -65 to 200

• I_C(max): 50
• Package Type: SOT3

TRANS PNP 50V 0.15A SOT-323 [See More]

• Polarity: PNP
• I_C(max): 150

• V_CEO: 50
• T_J: 150

Gen Purp AF BJT PNP 60V 1A B=160 SOT89 - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: PNP
• V_CBO: 60

• V_CEO: 60
• I_C(max): 1000

Win Source Part Number: 1206518-JANTXV2N3810. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Military, MIL-PRF-19500/336. Package: Bulk. Standard Package: 1. Power - Max: 350mW. Voltage - Collector Emitter Breakdown (Max): 60V. Current - Collector (Ic)... [See More]

• Polarity: PNP
• T_J: -65 to 200

• I_C(max): 50
• Package Type: SOT3

TRANS PNP 50V 0.15A EMT3F [See More]

• Polarity: PNP
• I_C(max): 150

• V_CEO: 50
• T_J: 150

Transistor BJT PNP 45V 0.1A SOT23 - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: PNP
• V_CBO: 50

• V_CEO: 45
• I_C(max): 100

Manufacturer: onsemi. Win Source Part Number: 1324224-NSVT3946DXV6T1G. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Packaging: Reel - TR. Standard Package: 4,000. Mounting: Surface Mount. Power - Max: 500mW. Voltage - Collector Emitter Breakdown (Max): 40V. [See More]

• Polarity: NPN; PNP
• T_J: -55 to 150

• I_C(max): 200
• Package Type: SOT3; SOT-563, SOT-666

TRANS PNP 50V 0.15A SOT-416 [See More]

• Polarity: PNP
• I_C(max): 150

• V_CEO: 50
• T_J: 150

Lo Noise AF BJT PNP 32V 0.1A B=250 SOT23 - Discrete Semiconductors - Bipolar Transistors [See More]

• Polarity: PNP
• V_CBO: 45

• V_CEO: 45
• I_C(max): 100

Win Source Part Number: 957773-BC857SH6327XTSA1. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 250mW. Voltage - Collector Emitter Breakdown (Max): 45V. Current - Collector (Ic)... [See More]

• Polarity: PNP
• T_J: 150

• I_C(max): 100
• Package Type: SOT3

TRANS PNP 50V 2A SOT-89 [See More]

• Polarity: PNP
• I_C(max): 2000

• V_CEO: 50
• T_J: 150

The IT130A Series Monolithic Dual, PNP Transistor is a direct replacement for Intersil IT130 Series. It is ideal for Small Signal Transistor Amplifier & Switching Applications. Available in PDIP 8L ROHS, TO-71 6L ROHS, TO-78 6L ROHS, SOIC 8L ROHS, and Tested Die. All Linear Systems devices are... [See More]

• Polarity: PNP

• Package Type: TO-71

Small signal bipolar junction transistor [See More]

• Polarity: PNP
• V_CEO: 45

• h_fe: 450
• I_C(max): 100

BCX53 Series 80 V 1 A SMT PNP BJT Transistor - SOT-89 [See More]

• Polarity: PNP

PNP -3.0A -30V Middle Power Transistor [See More]

• Polarity: PNP
• I_C(max): -3000

• V_CEO: -30
• T_J: -55 to 150

MACOMs product portfolio of high reliability semiconductors for the military, defense, satellite and aerospace industries includes: Rectifiers, Switching diodes, Zener diodes, Temperature compensated zeners, Current regulators, Transient voltage suppressors, Silicon controlled rectifiers, Small... [See More]

• Polarity: PNP
• V_CBO: 40 to 120

• h_fe: 30 to 18000
• I_C(max): 1000 to 20000

SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available in die form... [See More]

• Polarity: PNP
• V_CEO: 60

• h_fe: 450
• V_CBO: 70

The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the PNP devices (30 ohms for... [See More]

• Polarity: PNP
• V_CEO: 36

• h_fe: 50 to 75
• V_CBO: -40 to -36

Karl Kruse  is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]

• Polarity: PNP

Bipolar (Bjt) Single Transistor, Pnp, -40 V, 1.6 W, -5 A, 250 Rohs Compliant: Yes [See More]

• Polarity: PNP; PNP
• V_CEO: -40

• Transistor Technology / Material: SILICON
• I_C(max): 5000

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth. [See More]

• Polarity: NPN; PNP
• I_C(max): -150

• V_CEO: -50
• T_J: -55 to 150

Bipolar Transistors - BJT 1A [See More]

• Polarity: PNP; PNP
• V_CEO: 60

• Transistor Technology / Material: SILICON
• I_C(max): 1000

Bipolar Transistors - BJT 1W -20V [See More]

• Polarity: PNP; PNP
• V_CEO: 20

• Transistor Technology / Material: SILICON
• I_C(max): 3000

Bipolar Transistors - BJT 200mW Half H-Bridge [See More]

• Polarity: NPN; PNP; NPN, PNP
• V_CEO: 60

• Transistor Technology / Material: SILICON
• I_C(max): 600

Bipolar Transistors - BJT 250mW 45V [See More]

• Polarity: PNP; PNP
• V_CEO: 45

• Transistor Technology / Material: SILICON
• I_C(max): 100

Bipolar Transistors - BJT 500mA 30V PNP [See More]

• Polarity: PNP; PNP
• V_CEO: 25

• Transistor Technology / Material: SILICON
• I_C(max): 500

Bipolar Transistors - BJT 600V 0.1A PNP high vltg low VCEsat tran [See More]

• Polarity: PNP; PNP
• V_CEO: 600

• Transistor Technology / Material: SILICON
• I_C(max): 100

Bipolar Transistors - BJT BIP PNP 4A 50V [See More]

• Polarity: PNP; PNP
• V_CEO: 50

• Transistor Technology / Material: SILICON
• I_C(max): 4000

Bipolar Transistors - BJT BIPLR PW TRANS FLAT LEAD 4.5x4.0mm [See More]

• Polarity: PNP; PNP
• V_CEO: 50

• Transistor Technology / Material: SILICON
• I_C(max): 2000

Bipolar Transistors - BJT BIPOLAR TRANS PNP [See More]

• Polarity: PNP; PNP
• V_CEO: 40

• Transistor Technology / Material: SILICON
• I_C(max): 200

Bipolar Transistors - BJT BIPOLAR TRANS,PNP -100V,-5A [See More]

• Polarity: PNP; PNP
• V_CEO: 100

• Transistor Technology / Material: SILICON
• I_C(max): 5000

Bipolar Transistors - BJT BIPOLAR TRANSISTOR NPN [See More]

• Polarity: NPN; PNP; PNP
• V_CEO: 20

• Transistor Technology / Material: SILICON
• I_C(max): 3500

Bipolar Transistors - BJT Comp Dual [See More]

• Polarity: NPN; PNP; NPN, PNP
• V_CEO: 12

• Transistor Technology / Material: SILICON
• I_C(max): 1250

Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm [See More]

• Polarity: PNP; PNP
• V_CEO: 50

• Transistor Technology / Material: SILICON
• I_C(max): 100

Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm [See More]

• Polarity: PNP; PNP
• V_CEO: 50

• Transistor Technology / Material: SILICON
• I_C(max): 100

Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K [See More]

• Polarity: PNP; PNP
• V_CEO: 45

• Transistor Technology / Material: SILICON
• I_C(max): 100

Bipolar Transistors - BJT H-Bridge-40V [See More]

• Polarity: NPN; PNP; NPN, PNP
• V_CEO: 40

• Transistor Technology / Material: SILICON
• I_C(max): 2000

Bipolar Transistors - BJT PNP 12V/1A Sch Comb [See More]

• Polarity: PNP; PNP
• V_CEO: 12

• Transistor Technology / Material: SILICON
• I_C(max): 4000

Bipolar Transistors - BJT PNP 15V VCEO 2A [See More]

• Polarity: PNP; PNP
• I_C(max): 3000

• Transistor Technology / Material: SILICON
• P_D: 1000

Bipolar Transistors - BJT PNP 80V 4A [See More]

• Polarity: PNP; PNP
• V_CEO: 80

• Transistor Technology / Material: SILICON
• I_C(max): 4000

Bipolar Transistors - BJT PNP BIPOLAR [See More]

• Polarity: PNP; PNP
• V_CEO: 45

• Transistor Technology / Material: SILICON
• I_C(max): 100

Bipolar Transistors - BJT PNP Epitaxial Sil [See More]

• Polarity: PNP; PNP
• V_CEO: 150

• Transistor Technology / Material: SILICON
• I_C(max): 2000

Bipolar Transistors - BJT PNP Epitaxial Transistor [See More]

• Polarity: PNP; PNP
• V_CEO: 50

• Transistor Technology / Material: SILICON
• I_C(max): 150

Bipolar Transistors - BJT PNP Epitaxial Transistor [See More]

• Polarity: PNP; PNP
• V_CEO: 120

• Transistor Technology / Material: SILICON
• I_C(max): 800