PNP Small-Signal Bipolar Transistors (BJT)

Last Updated: January 16, 2025 Reviewed by: Mohsen Mostafaei, consulting engineer

Description

A PNP Small-Signal Bipolar Junction Transistor is a three-layer semiconductor device consisting of a thin N-type base region sandwiched between two P-type regions (emitter and collector). These transistors are specifically designed to handle low-power signals, typically operating with collector currents below 100mA and collector-emitter voltages under 30V.

Working Principle

PNP transistors operate by controlling a large current flow between the emitter and collector using a small current at the base terminal. When a negative voltage is applied to the emitter relative to the base, and the base is negative relative to the collector, holes from the emitter region flow through the base to the collector. The base current controls this flow, creating an amplification effect where small changes in base current result in larger changes in collector current. This behavior makes them particularly effective for signal amplification and switching applications in low-power circuits.

Applications

PNP small-signal transistors are extensively used in audio preamplifier stages, particularly in high-end phonograph circuits where their low-noise characteristics are valuable. They're found in precision temperature sensing circuits, such as those in medical thermometers and industrial process controls. These transistors are also crucial components in active filter designs, especially in professional audio equipment where they're used in state-variable filters. In modern smartphones, they're employed in power management circuits, specifically for battery charging control and voltage regulation.

Limitations

PNP transistors inherently have lower switching speeds compared to their NPN counterparts due to the slower mobility of holes versus electrons. They typically exhibit higher noise levels at frequencies above 100 kHz, making them less suitable for high-frequency applications. Temperature sensitivity can be problematic, with significant variations in performance above 85°C. Their current gain (hFE) often shows considerable unit-to-unit variation, sometimes as much as ±40% from the nominal value, which can complicate mass production of precise circuits.

Considerations

Initial costs for PNP small-signal transistors are generally low, typically ranging from $0.10 to $0.50 per unit in moderate quantities. However, when considering highly matched pairs or specialized versions with tight specifications, costs can increase to several dollars per unit. Operating expenses are minimal due to their low power consumption, typically less than 100mW. Durability is excellent, with typical lifespans exceeding 15 years in proper operating conditions. Replacement is straightforward but may require recalibration of sensitive circuits. Special attention must be paid to static discharge protection during handling and installation, as these devices can be damaged by voltages as low as 100V.

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Bipolar Transistors -- 1007569 [MJD32CT4G from onsemi]
from RS Components, Ltd.

Pwr 3A 100V Discrete PNP, MJD32CT4G [See More]

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1006864-SBC847BPDW1T3G - Image
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1006864-SBC847BPDW1T3G [SBC847BPDW1T3G from onsemi]
from Win Source Electronics

Win Source Part Number: 1006864-SBC847BPDW1T3G. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 10,000. Mounting: SMD (SMT). Power - Max: 380mW. Voltage - Collector Emitter Breakdown (Max):... [See More]

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30 V, 100 mA PNP general purpose transistor -- BC859BW,115
from Nexperia B.V.

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1048409-BC847BPN,125 [BC847BPN,125 from Nexperia B.V.]
from Win Source Electronics

Win Source Part Number: 1048409-BC847BPN,125. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 300mW. Voltage - Collector Emitter Breakdown (Max):... [See More]

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1048413-BC847QAPNZ [BC847QAPNZ from Nexperia B.V.]
from Win Source Electronics

Win Source Part Number: 1048413-BC847QAPNZ. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 5,000. Mounting: SMD (SMT). Power - Max: 350mW. Voltage - Collector Emitter Breakdown (Max): 45V. [See More]

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PNP general-purpose transistors in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. Features and benefits. Leadless ultra small SMD plastic package. Low package height of 0.37 mm. Power dissipation comparable to SOT23. AEC-Q101 qualified. Applications. [See More]

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1048426-BC856SF [BC856SF from Nexperia B.V.]
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Win Source Part Number: 1048426-BC856SF. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 10,000. Mounting: SMD (SMT). Power - Max: 400mW. Voltage - Collector Emitter Breakdown (Max):... [See More]

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40 V, 200 mA PNP/PNP general-purpose double transistor -- PMBT3906YS,115
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PNP/PNP general-purpose double transistor in a SOT363 (SC-88) a very small Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PMBT3904YS. NPN/PNP complement: PMBT3946YPN. Features and benefits. General-purpose double transistor. Board-space reduction. Applications. General-purpose... [See More]

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Win Source Part Number: 1079528-MMDT2227A_R1_00001. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 225mW, 200mW. Voltage - Collector Emitter Breakdown (Max): 40V, 60V. Current -... [See More]

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1079529-MMDT2907AQ-7-F [MMDT2907AQ-7-F from DIODES Incorporated]
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Win Source Part Number: 1079529-MMDT2907AQ-7-F. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel (TR). Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max): 60V. Current - Collector... [See More]

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45 V, 100 mA PNP general-purpose transistor -- BC857AM,315
from Nexperia B.V.

PNP general-purpose transistor in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package. NPN complement: BC847AM. Features and benefits. Leadless ultra small SMD plastic package. Power dissipation comparable to SOT23. Board space 1.3 × 0.9 mm. AEC-Q101... [See More]

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1085643-PMBT3906YS,115 [PMBT3906YS,115 from Nexperia B.V.]
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Win Source Part Number: 1085643-PMBT3906YS,115. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 350mW. Voltage - Collector Emitter Breakdown... [See More]

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1086362-PUMT1,115 [PUMT1,115 from Nexperia B.V.]
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from Nexperia B.V.

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1119873-BC847BPN/ZLX - Image
View Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1119873-BC847BPN/ZLX [BC847BPN/ZLX from Nexperia B.V.]
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1120400-BC847BPDW1T3G - Image
View Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1120400-BC847BPDW1T3G [BC847BPDW1T3G from onsemi]
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Bipolar Transistors -- 1138676 [MMBT2907ALT1G from onsemi]
from RS Components, Ltd.

PNP transistor,MMBT2907A 0.6A [See More]

  • Polarity: PNP
  • IC(max): -600
  • VCEO: -60
  • PD: 350
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1141661-CMKT2907AG TR PBFREE - Image
View Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1141661-CMKT2907AG TR PBFREE [CMKT2907AG TR PBFREE from Central Semiconductor Corp.]
from Win Source Electronics

Win Source Part Number: 1141661-CMKT2907AG TR PBFREE. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 350mW. Voltage - Collector Emitter Breakdown (Max): 60V. Current - Collector... [See More]

  • Polarity: PNP
  • TJ: -65 to 150
  • IC(max): 600
  • Package Type: SOT3
Bipolar Transistors -- 1216295 - Image
Bipolar Transistors -- 1216295 [TIP32AG from onsemi]
from RS Components, Ltd.

Transistor PNP 60V 3A 40W TO220AB [See More]

  • Polarity: PNP
  • IC(max): -3000
  • VCEO: -60
  • PD: 40000
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1152359-BC857BV,115 - Image
View Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1152359-BC857BV,115 [BC857BV,115 from Nexperia B.V.]
from Win Source Electronics

Win Source Part Number: 1152359-BC857BV,115. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 4,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max): 45V. [See More]

  • Polarity: PNP
  • TJ: 150
  • IC(max): 100
  • Package Type: SOT3
Bipolar Transistors -- 1216414 - Image
Bipolar Transistors -- 1216414 [MJD253T4G from onsemi]
from RS Components, Ltd.

PNP Power Transistor 100V 4A 12.5W DPAK [See More]

  • Polarity: PNP
  • IC(max): -4000
  • VCEO: -100
  • PD: 12500
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1157643-HN3A51F(TE85L,F) - Image
View Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1157643-HN3A51F(TE85L,F) [HN3A51F(TE85L,F) from Toshiba America Electronic Components, Inc.]
from Win Source Electronics

Win Source Part Number: 1157643-HN3A51F(TE85L,F). Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 300mW. Voltage - Collector Emitter Breakdown (Max): 120V. Current - Collector... [See More]

  • Polarity: PNP
  • TJ: 150
  • IC(max): 100
  • Package Type: SOT3
Bipolar Transistors -- 1216418 - Image
Bipolar Transistors -- 1216418 [MJL1302AG from onsemi]
from RS Components, Ltd.

PNP Power Transistor 260V 15A 200W TO264 [See More]

  • Polarity: PNP
  • VCBO: 260
  • VCEO: -260
  • IC(max): -15000
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1170580-CMLT3906EG TR PBFREE - Image
View Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1170580-CMLT3906EG TR PBFREE [CMLT3906EG TR PBFREE from Central Semiconductor Corp.]
from Win Source Electronics

Win Source Part Number: 1170580-CMLT3906EG TR PBFREE. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 150mW. Voltage - Collector Emitter Breakdown (Max): 40V. Current - Collector... [See More]

  • Polarity: PNP
  • TJ: -65 to 150
  • IC(max): 200
  • Package Type: SOT3
Bipolar Transistors -- 1216419 - Image
Bipolar Transistors -- 1216419 [MJL21193G from onsemi]
from RS Components, Ltd.

PNP Power Transistor 250V 16A 200W TO264 [See More]

  • Polarity: PNP
  • VCBO: 400
  • VCEO: -250
  • IC(max): -16000
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1177148-2N5796U - Image
View Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1177148-2N5796U [2N5796U from TT Electronics]
from Win Source Electronics

Win Source Part Number: 1177148-2N5796U. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Bulk. Standard Package: 120. Mounting: SMD (SMT). Power - Max: 600mW. Voltage - Collector Emitter Breakdown (Max): 60V. Current - Collector (Ic) (Max): 600mA. [See More]

  • Polarity: PNP
  • TJ: -65 to 200
  • IC(max): 600
  • Package Type: SOT3
Bipolar Transistors -- 1216420 - Image
Bipolar Transistors -- 1216420 [MJW21195G from onsemi]
from RS Components, Ltd.

PNP Power Transistor 250V 16A 200W TO247 [See More]

  • Polarity: PNP
  • VCBO: 400
  • VCEO: -250
  • IC(max): -16000
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1201248-MMDT3906TB6_R1_00001 - Image
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1201248-MMDT3906TB6_R1_00001 [MMDT3906TB6_R1_00001 from PANJIT SemiConductor]
from Win Source Electronics

Win Source Part Number: 1201248-MMDT3906TB6_R1_00001. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 4,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max): 40V. Current - Collector... [See More]

  • Polarity: PNP
  • TJ: -55 to 150
  • IC(max): 200
  • Package Type: SOT3
Bipolar Transistors -- 1219421 - Image
Bipolar Transistors -- 1219421
from RS Components, Ltd.

Transistor,PNP,500mA,400V,SOT223 [See More]

  • Polarity: PNP
  • IC(max): -500
  • VCEO: -400
  • PD: 2000
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1206076-JANS2N3810U/TR - Image
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1206076-JANS2N3810U/TR [JANS2N3810U/TR from Microchip Technology, Inc.]
from Win Source Electronics

Win Source Part Number: 1206076-JANS2N3810U/TR. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Military, MIL-PRF-19500/336. Package: Tape & Reel (TR). Standard Package: 1. Mounting: SMD (SMT). Power - Max: 350mW. Voltage - Collector Emitter Breakdown... [See More]

  • Polarity: PNP
  • TJ: -65 to 200
  • IC(max): 50
  • Package Type: SOT3
Bipolar Transistors -- 1219423 - Image
Bipolar Transistors -- 1219423
from RS Components, Ltd.

Transistor,PNP,0.2A,300V,SOT23 [See More]

  • Polarity: PNP
  • IC(max): -200
  • VCEO: -300
  • PD: 500
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1206518-JANTXV2N3810 - Image
View Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1206518-JANTXV2N3810 [JANTXV2N3810 from Microchip Technology, Inc.]
from Win Source Electronics

Win Source Part Number: 1206518-JANTXV2N3810. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Military, MIL-PRF-19500/336. Package: Bulk. Standard Package: 1. Power - Max: 350mW. Voltage - Collector Emitter Breakdown (Max): 60V. Current - Collector (Ic)... [See More]

  • Polarity: PNP
  • TJ: -65 to 200
  • IC(max): 50
  • Package Type: SOT3
Bipolar Transistors -- 1219441 - Image
Bipolar Transistors -- 1219441
from RS Components, Ltd.

Transistor PNP 45V 0.1A SOT23 [See More]

  • Polarity: PNP
  • IC(max): -100
  • VCEO: -45
  • PD: 300
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1324224-NSVT3946DXV6T1G - Image
View Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 1324224-NSVT3946DXV6T1G [NSVT3946DXV6T1G from onsemi]
from Win Source Electronics

Manufacturer: onsemi. Win Source Part Number: 1324224-NSVT3946DXV6T1G. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Packaging: Reel - TR. Standard Package: 4,000. Mounting: Surface Mount. Power - Max: 500mW. Voltage - Collector Emitter Breakdown (Max): 40V. [See More]

  • Polarity: NPN; PNP
  • TJ: -55 to 150
  • IC(max): 200
  • Package Type: SOT3; SOT-563, SOT-666
Bipolar Transistors -- 1219445 - Image
Bipolar Transistors -- 1219445
from RS Components, Ltd.

Transistor PNP 45V 0.1A SOT323 [See More]

  • Polarity: PNP
  • IC(max): -100
  • VCEO: -45
  • PD: 200
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 957773-BC857SH6327XTSA1 - Image
View Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays -- 957773-BC857SH6327XTSA1 [BC857SH6327XTSA1 from Infineon Technologies AG]
from Win Source Electronics

Win Source Part Number: 957773-BC857SH6327XTSA1. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 250mW. Voltage - Collector Emitter Breakdown (Max): 45V. Current - Collector (Ic)... [See More]

  • Polarity: PNP
  • TJ: 150
  • IC(max): 100
  • Package Type: SOT3
Hi-Rel PNP Transistors - Image
Hi-Rel PNP Transistors
from MACOM

MACOMs product portfolio of high reliability semiconductors for the military, defense, satellite and aerospace industries includes: Rectifiers, Switching diodes, Zener diodes, Temperature compensated zeners, Current regulators, Transient voltage suppressors, Silicon controlled rectifiers, Small... [See More]

  • Polarity: PNP
  • VCBO: 40 to 120
  • hfe: 30 to 18000
  • IC(max): 1000 to 20000
BCX53 Series 80 V 1 A SMT PNP BJT Transistor - SOT-89 -- 15976-LM5Z51VT1G - Image
BCX53 Series 80 V 1 A SMT PNP BJT Transistor - SOT-89 -- 15976-LM5Z51VT1G
from Utmel Electronic Limited

BCX53 Series 80 V 1 A SMT PNP BJT Transistor - SOT-89 [See More]

  • Polarity: PNP
Matched Transistor Array -- TT1300S - Image
View Datasheet
Matched Transistor Array -- TT1300S
from TT Semiconductor, Inc.

The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the PNP devices (30 ohms for... [See More]

  • Polarity: PNP
  • VCEO: 36
  • hfe: 50 to 75
  • VCBO: -40 to -36
Small Signal Bipolar Junction Transistor -- BC857BS
from PANJIT SemiConductor

Small signal bipolar junction transistor [See More]

  • Polarity: PNP
  • VCEO: 45
  • hfe: 450
  • IC(max): 100
Bipolar Transistor -- 2N2605 - Image
Bipolar Transistor -- 2N2605
from Semicoa

SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available in die form... [See More]

  • Polarity: PNP
  • VCEO: 60
  • hfe: 450
  • VCBO: 70
200 A, 300 V, PNP, SILICON, GENERAL PURPOSE SMALL -- BFN27-E6327-SMD - Image
View Datasheet
200 A, 300 V, PNP, SILICON, GENERAL PURPOSE SMALL -- BFN27-E6327-SMD
from Karl Kruse GmbH & Co. KG

Karl Kruse  is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]

  • Polarity: PNP
PNP General Purpose Amplification Transistor + NPN Digital transistor -- UMF28N - Image
View Datasheet
PNP General Purpose Amplification Transistor + NPN Digital transistor -- UMF28N
from ROHM Semiconductor GmbH

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth. [See More]

  • Polarity: NPN; PNP
  • IC(max): -150
  • VCEO: -50
  • TJ: -55 to 150
Driver Transistor -- 2SAR542F3 - Image
View Datasheet
Driver Transistor -- 2SAR542F3
from ROHM Semiconductor USA, LLC

PNP -3.0A -30V Middle Power Transistor [See More]

  • Polarity: PNP
  • IC(max): -3000
  • VCEO: -30
  • TJ: -55 to 150
Bipolar Transistors -- IT132 - Image
View Datasheet
Bipolar Transistors -- IT132
from Linear Systems

The IT130A Series Monolithic Dual, PNP Transistor is a direct replacement for Intersil IT130 Series. It is ideal for Small Signal Transistor Amplifier & Switching Applications. Available in PDIP 8L ROHS, TO-71 6L ROHS, TO-78 6L ROHS, SOIC 8L ROHS, and Tested Die. All Linear Systems devices are... [See More]

  • Polarity: PNP
  • Package Type: TO-71
Bipolar (Bjt) Single Transistor, Pnp, -40 V, 1.6 W, -5 A, 250 Rohs Compliant: Yes -- 761-2STN2540 - Image
Bipolar (Bjt) Single Transistor, Pnp, -40 V, 1.6 W, -5 A, 250 Rohs Compliant: Yes -- 761-2STN2540 [2STN2540 from STMicroelectronics]
from Utmel Electronic Limited

Bipolar (Bjt) Single Transistor, Pnp, -40 V, 1.6 W, -5 A, 250 Rohs Compliant: Yes [See More]

  • Polarity: PNP; PNP
  • VCEO: -40
  • Transistor Technology / Material: SILICON
  • IC(max): 5000
PNP Low VCE(sat) Transistor + NPN Digital transistor -- EMF5 - Image
View Datasheet
PNP Low VCE(sat) Transistor + NPN Digital transistor -- EMF5
from ROHM Semiconductor GmbH

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth. [See More]

  • Polarity: NPN; PNP
  • IC(max): -500
  • VCEO: -12
  • TJ: -55 to 150
PNP General Purpose Amplification Transistor + NPN Digital transistor -- UMF28N - Image
View Datasheet
PNP General Purpose Amplification Transistor + NPN Digital transistor -- UMF28N
from ROHM Semiconductor USA, LLC

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth. [See More]

  • Polarity: NPN; PNP
  • IC(max): -150
  • VCEO: -50
  • TJ: -55 to 150
Bipolar Transistors - BJT 1A -- 233-DPBT8105-7 - Image
Bipolar Transistors - BJT 1A -- 233-DPBT8105-7 [DPBT8105-7 from DIODES Incorporated]
from Utmel Electronic Limited

Bipolar Transistors - BJT 1A [See More]

  • Polarity: PNP; PNP
  • VCEO: 60
  • Transistor Technology / Material: SILICON
  • IC(max): 1000
Bipolar Transistors - BJT 1W -20V -- 233-2DB1424R-13 - Image
Bipolar Transistors - BJT 1W -20V -- 233-2DB1424R-13 [2DB1424R-13 from DIODES Incorporated]
from Utmel Electronic Limited

Bipolar Transistors - BJT 1W -20V [See More]

  • Polarity: PNP; PNP
  • VCEO: 20
  • Transistor Technology / Material: SILICON
  • IC(max): 3000
Bipolar Transistors - BJT 200mW Half H-Bridge -- 233-HBDM60V600W-7 - Image
Bipolar Transistors - BJT 200mW Half H-Bridge -- 233-HBDM60V600W-7 [HBDM60V600W-7 from DIODES Incorporated]
from Utmel Electronic Limited

Bipolar Transistors - BJT 200mW Half H-Bridge [See More]

  • Polarity: NPN; PNP; NPN, PNP
  • VCEO: 60
  • Transistor Technology / Material: SILICON
  • IC(max): 600
Bipolar Transistors - BJT 250mW 45V -- 233-BC857BLP-7 - Image
Bipolar Transistors - BJT 250mW 45V -- 233-BC857BLP-7 [BC857BLP-7 from DIODES Incorporated]
from Utmel Electronic Limited

Bipolar Transistors - BJT 250mW 45V [See More]

  • Polarity: PNP; PNP
  • VCEO: 45
  • Transistor Technology / Material: SILICON
  • IC(max): 100
Bipolar Transistors - BJT 500mA 30V PNP -- 598-BC808-25LT1G - Image
Bipolar Transistors - BJT 500mA 30V PNP -- 598-BC808-25LT1G [BC808-25LT1G from onsemi]
from Utmel Electronic Limited

Bipolar Transistors - BJT 500mA 30V PNP [See More]

  • Polarity: PNP; PNP
  • VCEO: 25
  • Transistor Technology / Material: SILICON
  • IC(max): 500
Bipolar Transistors - BJT 600V 0.1A PNP high vltg low VCEsat tran -- 554-PBHV3160ZX - Image
Bipolar Transistors - BJT 600V 0.1A PNP high vltg low VCEsat tran -- 554-PBHV3160ZX [PBHV3160ZX from Nexperia B.V.]
from Utmel Electronic Limited

Bipolar Transistors - BJT 600V 0.1A PNP high vltg low VCEsat tran [See More]

  • Polarity: PNP; PNP
  • VCEO: 600
  • Transistor Technology / Material: SILICON
  • IC(max): 100
Bipolar Transistors - BJT BIP PNP 4A 50V -- 598-2SA2013-TD-E - Image
Bipolar Transistors - BJT BIP PNP 4A 50V -- 598-2SA2013-TD-E [2SA2013-TD-E from onsemi]
from Utmel Electronic Limited

Bipolar Transistors - BJT BIP PNP 4A 50V [See More]

  • Polarity: PNP; PNP
  • VCEO: 50
  • Transistor Technology / Material: SILICON
  • IC(max): 4000
Bipolar Transistors - BJT BIPLR PW TRANS FLAT LEAD 4.5x4.0mm -- 590-DSA7004S0L - Image
Bipolar Transistors - BJT BIPLR PW TRANS FLAT LEAD 4.5x4.0mm -- 590-DSA7004S0L [DSA7004S0L from Panasonic]
from Utmel Electronic Limited

Bipolar Transistors - BJT BIPLR PW TRANS FLAT LEAD 4.5x4.0mm [See More]

  • Polarity: PNP; PNP
  • VCEO: 50
  • Transistor Technology / Material: SILICON
  • IC(max): 2000
Bipolar Transistors - BJT BIPOLAR TRANS PNP -- 233-DST3906DJ-7 - Image
Bipolar Transistors - BJT BIPOLAR TRANS PNP -- 233-DST3906DJ-7 [DST3906DJ-7 from DIODES Incorporated]
from Utmel Electronic Limited

Bipolar Transistors - BJT BIPOLAR TRANS PNP [See More]

  • Polarity: PNP; PNP
  • VCEO: 40
  • Transistor Technology / Material: SILICON
  • IC(max): 200
Bipolar Transistors - BJT BIPOLAR TRANS,PNP -100V,-5A -- 233-DXT2013P5-13 - Image
Bipolar Transistors - BJT BIPOLAR TRANS,PNP -100V,-5A -- 233-DXT2013P5-13 [DXT2013P5-13 from DIODES Incorporated]
from Utmel Electronic Limited

Bipolar Transistors - BJT BIPOLAR TRANS,PNP -100V,-5A [See More]

  • Polarity: PNP; PNP
  • VCEO: 100
  • Transistor Technology / Material: SILICON
  • IC(max): 5000
Bipolar Transistors - BJT BIPOLAR TRANSISTOR NPN -- 233-ZXTP718MATA - Image
Bipolar Transistors - BJT BIPOLAR TRANSISTOR NPN -- 233-ZXTP718MATA [ZXTP718MATA from DIODES Incorporated]
from Utmel Electronic Limited

Bipolar Transistors - BJT BIPOLAR TRANSISTOR NPN [See More]

  • Polarity: NPN; PNP; PNP
  • VCEO: 20
  • Transistor Technology / Material: SILICON
  • IC(max): 3500
Bipolar Transistors - BJT Comp Dual -- 233-ZXTD6717E6TA - Image
Bipolar Transistors - BJT Comp Dual -- 233-ZXTD6717E6TA [ZXTD6717E6TA from DIODES Incorporated]
from Utmel Electronic Limited

Bipolar Transistors - BJT Comp Dual [See More]

  • Polarity: NPN; PNP; NPN, PNP
  • VCEO: 12
  • Transistor Technology / Material: SILICON
  • IC(max): 1250
Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm -- 590-DMA501010R - Image
Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm -- 590-DMA501010R [DMA501010R from Panasonic]
from Utmel Electronic Limited

Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm [See More]

  • Polarity: PNP; PNP
  • VCEO: 50
  • Transistor Technology / Material: SILICON
  • IC(max): 100
Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm -- 590-DMA506010R - Image
Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm -- 590-DMA506010R [DMA506010R from Panasonic]
from Utmel Electronic Limited

Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm [See More]

  • Polarity: PNP; PNP
  • VCEO: 50
  • Transistor Technology / Material: SILICON
  • IC(max): 100
Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K -- 233-BC857BLP4-7B - Image
Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K -- 233-BC857BLP4-7B [BC857BLP4-7B from DIODES Incorporated]
from Utmel Electronic Limited

Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K [See More]

  • Polarity: PNP; PNP
  • VCEO: 45
  • Transistor Technology / Material: SILICON
  • IC(max): 100
Bipolar Transistors - BJT H-Bridge-40V -- 233-ZHB6790TA - Image
Bipolar Transistors - BJT H-Bridge-40V -- 233-ZHB6790TA [ZHB6790TA from DIODES Incorporated]
from Utmel Electronic Limited

Bipolar Transistors - BJT H-Bridge-40V [See More]

  • Polarity: NPN; PNP; NPN, PNP
  • VCEO: 40
  • Transistor Technology / Material: SILICON
  • IC(max): 2000
Bipolar Transistors - BJT PNP 12V/1A Sch Comb -- 233-ZX3CD1S1M832TA - Image
Bipolar Transistors - BJT PNP 12V/1A Sch Comb -- 233-ZX3CD1S1M832TA [ZX3CD1S1M832TA from DIODES Incorporated]
from Utmel Electronic Limited

Bipolar Transistors - BJT PNP 12V/1A Sch Comb [See More]

  • Polarity: PNP; PNP
  • VCEO: 12
  • Transistor Technology / Material: SILICON
  • IC(max): 4000
Bipolar Transistors - BJT PNP 15V VCEO 2A -- 233-ZTX788B - Image
Bipolar Transistors - BJT PNP 15V VCEO 2A -- 233-ZTX788B [ZTX788B from DIODES Incorporated]
from Utmel Electronic Limited

Bipolar Transistors - BJT PNP 15V VCEO 2A [See More]

  • Polarity: PNP; PNP
  • IC(max): 3000
  • Transistor Technology / Material: SILICON
  • PD: 1000
Bipolar Transistors - BJT PNP 80V 4A -- 554-PBSS305PX,115 - Image
Bipolar Transistors - BJT PNP 80V 4A -- 554-PBSS305PX,115 [PBSS305PX,115 from Nexperia B.V.]
from Utmel Electronic Limited

Bipolar Transistors - BJT PNP 80V 4A [See More]

  • Polarity: PNP; PNP
  • VCEO: 80
  • Transistor Technology / Material: SILICON
  • IC(max): 4000
Bipolar Transistors - BJT PNP BIPOLAR -- 233-BC857AW-7-F - Image
Bipolar Transistors - BJT PNP BIPOLAR -- 233-BC857AW-7-F [BC857AW-7-F from DIODES Incorporated]
from Utmel Electronic Limited

Bipolar Transistors - BJT PNP BIPOLAR [See More]

  • Polarity: PNP; PNP
  • VCEO: 45
  • Transistor Technology / Material: SILICON
  • IC(max): 100
Bipolar Transistors - BJT PNP Epitaxial Sil -- 598-BD240CTU - Image
Bipolar Transistors - BJT PNP Epitaxial Sil -- 598-BD240CTU [BD240CTU from onsemi]
from Utmel Electronic Limited

Bipolar Transistors - BJT PNP Epitaxial Sil [See More]

  • Polarity: PNP; PNP
  • VCEO: 150
  • Transistor Technology / Material: SILICON
  • IC(max): 2000
Bipolar Transistors - BJT PNP Epitaxial Transistor -- 598-KSA733GTA - Image
Bipolar Transistors - BJT PNP Epitaxial Transistor -- 598-KSA733GTA [KSA733GTA from onsemi]
from Utmel Electronic Limited

Bipolar Transistors - BJT PNP Epitaxial Transistor [See More]

  • Polarity: PNP; PNP
  • VCEO: 50
  • Transistor Technology / Material: SILICON
  • IC(max): 150
Bipolar Transistors - BJT PNP Epitaxial Transistor -- 598-KSA916YTA - Image
Bipolar Transistors - BJT PNP Epitaxial Transistor -- 598-KSA916YTA [KSA916YTA from onsemi]
from Utmel Electronic Limited

Bipolar Transistors - BJT PNP Epitaxial Transistor [See More]

  • Polarity: PNP; PNP
  • VCEO: 120
  • Transistor Technology / Material: SILICON
  • IC(max): 800