PHEMT RF Transistors
from Qorvo
The RFAM3620 is an Integrated Edge QAM Amplifier Module. The part employs GaAs pHEMT die, GaAs MESFET die, a 20 dB range variable attenuator and a power enable feature, has high output capability, and is operated from 45 MHz to 1218 MHz. It provides excellent linearity and superior return loss... [See More]
- Transistor Type: PHEMT
- Package Type: SMD
- Transistor Technology / Material: GaAs
- Power Gain: 36
from ODG (Origin Data Global)
FET RF 5.5V 2GHZ SOT-343 [See More]
- Transistor Type: MOSFET RF; PHEMT; pHEMT FET
- Package Type: SC-82A, SOT-343
- Transistor Technology / Material: pHEMT FET
- Power Gain: 17.5
from Win Source Electronics
Manufacturer: Freescale Semiconductor - NXP. Win Source Part Number: 1226964-MRFG35003ANT1. Manufacturer Homepage: www.freescale.com. Popularity: Medium. Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited [See More]
- Transistor Type: PHEMT
- Package Type: SOT3
from Qorvo
Qorvo's QPD2120D is a discrete 1200-micron pHEMT which operates from DC to 20 GHz. The QPD2120D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating... [See More]
- Transistor Type: PHEMT
- Transistor Grade / Operating Range: Military
- Transistor Technology / Material: DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die
- Package Type: Die
from ODG (Origin Data Global)
FET RF 3V 12GHZ 77-SMD [See More]
- Transistor Type: MOSFET RF; PHEMT; pHEMT FET
- Package Type: 4-SMD (77 Pack)
- Transistor Technology / Material: pHEMT FET
- Power Gain: 12
from Win Source Electronics
Manufacturer: Freescale Semiconductor - NXP. Win Source Part Number: 1226966-MRFG35010. Manufacturer Homepage: www.freescale.com. RoHS State: Request Verification. Popularity: Medium. Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited [See More]
- Transistor Type: PHEMT
- Package Type: SOT3
from Qorvo
Qorvo's QPD2160D is a discrete 1600-micron pHEMT which operates from DC to 20 GHz. The QPD2160D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating... [See More]
- Transistor Type: PHEMT
- Transistor Grade / Operating Range: Military
- Transistor Technology / Material: DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die
- Package Type: Die
from ODG (Origin Data Global)
FET RF 3V 12GHZ 77-SMD [See More]
- Transistor Type: MOSFET RF; PHEMT; pHEMT FET
- Package Type: 4-SMD (77 Pack)
- Transistor Technology / Material: pHEMT FET
- Power Gain: 12
from Win Source Electronics
Manufacturer: Freescale Semiconductor - NXP. Win Source Part Number: 1226967-MRFG35010NT1. Manufacturer Homepage: www.freescale.com. Popularity: Medium. Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance [See More]
- Transistor Type: PHEMT
- Package Type: SOT3
from Qorvo
Qorvo's QPD2018D is a discrete 180-micron pHEMT which operates from DC to 20 GHz. The QPD2018D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating... [See More]
- Transistor Type: PHEMT
- Transistor Grade / Operating Range: Military
- Transistor Technology / Material: GaAs
- Package Type: Die
from ODG (Origin Data Global)
FET RF 3V 4GHZ SOT-363 [See More]
- Transistor Type: MOSFET RF; PHEMT; pHEMT FET
- Package Type: 6-TSSOP, SC-88, SOT-363
- Transistor Technology / Material: pHEMT FET
- Power Gain: 15.8
from Win Source Electronics
Manufacturer: Freescale Semiconductor - NXP. Win Source Part Number: 1226968-MRFG35010R1. Manufacturer Homepage: www.freescale.com. Popularity: Medium. Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited [See More]
- Transistor Type: PHEMT
- Package Type: SOT3
from Qorvo
Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating... [See More]
- Transistor Type: PHEMT
- Transistor Grade / Operating Range: Military
- Transistor Technology / Material: DC - 20 GHz, 250 um Discrete GaAs pHEMT Die
- Package Type: Die
from ODG (Origin Data Global)
FET RF 7V 2GHZ SOT-89 [See More]
- Transistor Type: MOSFET RF; PHEMT; E-pHEMT
- Package Type: SOT89; TO-243AA
- Transistor Technology / Material: E-pHEMT
- Power Gain: 15.5
from Qorvo
Qorvo's QPD2040D is a discrete 400-micron pHEMT which operates from DC to 20 GHz. The QPD2040D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating... [See More]
- Transistor Type: PHEMT
- Transistor Grade / Operating Range: Military
- Transistor Technology / Material: DC - 20 GHz, 400 um Discrete GaAs pHEMT Die
- Package Type: Die
from ODG (Origin Data Global)
FET RF 7V 2GHZ 8-LPCC [See More]
- Transistor Type: MOSFET RF; PHEMT; E-pHEMT
- Package Type: 8-WFDFN Exposed Pad
- Transistor Technology / Material: E-pHEMT
- Power Gain: 20
from Qorvo
Qorvo's QPD2060D is a discrete 600-micron pHEMT which operates from DC to 20 GHz. The QPD2060D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating... [See More]
- Transistor Type: PHEMT
- Transistor Grade / Operating Range: Military
- Transistor Technology / Material: DC - 20 GHz, 600 um Discrete GaAs pHEMT Die
- Package Type: Die
from ODG (Origin Data Global)
IC TRANS E-PHEMT GAAS MINIPAK [See More]
- Transistor Type: MOSFET RF; PHEMT; pHEMT FET
- Package Type: 0505 (1412 Metric)
- Transistor Technology / Material: pHEMT FET
- Power Gain: 17.5
from Qorvo
Qorvo's QPD2080D is a discrete 800-micron pHEMT which operates from DC to 20 GHz. The QPD2080D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating... [See More]
- Transistor Type: PHEMT
- Transistor Grade / Operating Range: Military
- Transistor Technology / Material: DC - 20 GHz, 800 um Discrete GaAs pHEMT Die
- Package Type: Die
from ODG (Origin Data Global)
RF FET 4V 12GHZ 4MICROX [See More]
- Transistor Type: MOSFET RF; PHEMT; pHEMT FET
- Package Type: 4-Micro-X
- Transistor Technology / Material: pHEMT FET
- Power Gain: 13.7
from ODG (Origin Data Global)
RF MOSFET PHEMT FET 2V [See More]
- Transistor Type: MOSFET RF; PHEMT; pHEMT FET
- Package Type: 4-SMD, Flat Leads
- Transistor Technology / Material: pHEMT FET
- Power Gain: 12.2
from ODG (Origin Data Global)
FET RF 15V 3.55GHZ PLD-1.5 [See More]
- Transistor Type: MOSFET RF; PHEMT; pHEMT FET
- Package Type: PLD-1.5
- Transistor Technology / Material: pHEMT FET
- Power Gain: 10
from ODG (Origin Data Global)
RF MOSFET E-PHEMT 3V SC70-4 [See More]
- Transistor Type: MOSFET RF; PHEMT; E-pHEMT
- Package Type: SC-82A, SOT-343
- Transistor Technology / Material: E-pHEMT
- Power Gain: 23.2
from ODG (Origin Data Global)
RF MOSFET E-PHEMT 3V FG873 [See More]
- Transistor Type: MOSFET RF; PHEMT; E-pHEMT
- Package Type: 4-SMD, No Lead
- Transistor Technology / Material: E-pHEMT
- Power Gain: 23.8
from ODG (Origin Data Global)
SMT LOW NOISE AMPLIFIER, 400 - 3 [See More]
- Transistor Type: MOSFET RF; PHEMT; E-pHEMT
- Package Type: 8-TFDFN Exposed Pad
- Transistor Technology / Material: E-pHEMT
- Power Gain: 23.5