Military RF Transistors

Qorvo's TGF3015-SM is a 10W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within... [See More]

• Transistor Grade / Operating Range: Military
• Package Type: QFN

• Transistor Technology / Material: 0.03 - 3.0 GHz, 10 Watt, 32 Volt GaN RF Input-Matched Transistor
• Power Gain: 17

Qorvo's TGF3021-SM is a 30 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 4 GHz and a 32V supply rail. The device is in an industry standard 3x4mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications,... [See More]

• Transistor Grade / Operating Range: Military
• Package Type: QFN

• Transistor Technology / Material: GaN
• Power Gain: 19

Qorvo's QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can... [See More]

• Transistor Grade / Operating Range: Military
• Transistor Technology / Material: GaN

• Transistor Type: IMFET
• Package Type: RF-565

The QPD1028L is a 750W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency. Input pre-match within the package results in ease of external board match and saves board space. The... [See More]

• Transistor Grade / Operating Range: Military
• Package Type: NI-780

• Transistor Technology / Material: 1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor
• Power Gain: 18

The QPD1028 is a 750W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency. Input pre-match within the package results in ease of external board match and saves board space. The... [See More]

• Transistor Grade / Operating Range: Military
• Package Type: NI-780

• Transistor Technology / Material: 1.2 - 1.4 GHz, 750 Watt, 65 Volt, GaN on SiC RF Transistor
• Power Gain: 18

QPD2929L is a 100W (P3dB), wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications,... [See More]

• Transistor Grade / Operating Range: Military
• Package Type: NI-360

• Transistor Technology / Material: 100 W, DC-3.5 GHz, GaN RF Transistor
• Power Gain: 11.5

The Qorvo QPD1026L is a 1300 W (P3dB) discrete GaN on SiC HEMT which operates from 420 to 450 MHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for amateur radio, public... [See More]

• Transistor Grade / Operating Range: Military
• Package Type: NI-1230 (Eared)

• Transistor Technology / Material: 1300 Watt, 65 Volt, 420 - 450 MHz GaN RF Input-Matched Transistor
• Power Gain: 25.9

The Qorvo QPD1029L is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and... [See More]

• Transistor Grade / Operating Range: Military
• Package Type: NI-1230 (Eared)

• Transistor Technology / Material: 1500 Watt, 65 Volt, 1.2 - 1.4 GHz, GaN RF Input-Matched Transistor
• Power Gain: 21.3

QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. [See More]

• Transistor Grade / Operating Range: Military
• Package Type: QFN

• Transistor Technology / Material: 15W, 30-1200 MHz, GaN RF Input-Matched Transistor
• Power Gain: 15.5

QPD1000A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1215 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. [See More]

• Transistor Grade / Operating Range: Military
• Package Type: QFN

• Transistor Technology / Material: 15W, 30-1215 MHz, GaN RF Input-Matched Transistor
• Power Gain: 16

The Qorvo QPD1025 is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96 to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and... [See More]

• Transistor Grade / Operating Range: Military
• Package Type: NI-1230 (Earless)

• Transistor Technology / Material: 1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
• Power Gain: 22.5

The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and... [See More]

• Transistor Grade / Operating Range: Military
• Package Type: NI-1230 (Eared)

• Transistor Technology / Material: 1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
• Power Gain: 22.5

The QPD0005 is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable of delivering PSAT of 8.7 W at +48 V operation. Lead free and RoHS compliant. [See More]

• Transistor Grade / Operating Range: Military
• Package Type: DFN

• Transistor Technology / Material: 2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor
• Power Gain: 18.8

QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. [See More]

• Transistor Grade / Operating Range: Military
• Package Type: QFN

• Transistor Technology / Material: 25W, 30-1200 MHz, GaN RF Input-Matched Transistor
• Power Gain: 17

The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. [See More]

• Transistor Grade / Operating Range: Military
• Package Type: NI-650

• Transistor Technology / Material: 300W, 1-1.5 GHz, GaN on SiC RF Transistor
• Power Gain: 15

Qorvo's TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the... [See More]

• Transistor Grade / Operating Range: Military
• Package Type: QFN

• Transistor Technology / Material: GaN
• Power Gain: 12.7

The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support... [See More]

• Transistor Grade / Operating Range: Military
• Transistor Technology / Material: 450 Watt, 50 Volt, 1.2 - 1.4 GHz GaN IMFET

• Transistor Type: IMFET
• Package Type: Ni50-CW

The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support... [See More]

• Transistor Grade / Operating Range: Military
• Package Type: NI-780

• Transistor Technology / Material: GaN
• Power Gain: 23.9

The Qorvo QPD1016L is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support... [See More]

• Transistor Grade / Operating Range: Military
• Package Type: NI-780

• Transistor Technology / Material: GaN
• Power Gain: 15

QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. [See More]

• Transistor Grade / Operating Range: Military
• Package Type: QFN

• Transistor Technology / Material: 7W, 30-1200 MHz, GaN RF Input-Matched Transistor
• Power Gain: 12.8

The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to... [See More]

• Transistor Grade / Operating Range: Military
• Package Type: QFN

• Transistor Technology / Material: GaN
• Power Gain: 24

Qorvo's TGF2978-SM is a 20 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 3x3mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications,... [See More]

• Transistor Grade / Operating Range: Military
• Package Type: QFN

• Transistor Technology / Material: GaN
• Power Gain: 11

Qorvo's TGF2979-SM is a 25 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 4 x 3 mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications,... [See More]

• Transistor Grade / Operating Range: Military
• Package Type: QFN

• Transistor Technology / Material: DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor
• Power Gain: 11

Qorvo's TGF2954 is a discrete 5.04 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2954 typically provides 44.5 dBm of saturated output power with power gain of 19.5 dB at 3 GHz. The maximum power added efficiency is 71.5 % which makes the TGF2954 appropriate for high efficiency... [See More]

• Transistor Grade / Operating Range: Military
• Package Type: Die

• Transistor Technology / Material: GaN on SiC
• Power Gain: 19.6

Wolfspeed ’s CGHV38375F is a packaged, 400 W HPA matched to 50 ohms at both input and output ports. The CGHV38375F operates from 2.75 – 3.75 GHz providing coverage over the entire S-band radar band. This high-power amplifier provides >10 dB of large signal gain and 40% power-added... [See More]

• Transistor Grade / Operating Range: Commercial; Industrial; Military
• Power Gain: 10

• Transistor Technology / Material: 2.75 - 3.75, 400W GaN on SiC HPA
• Output Power: 400

SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available in die form... [See More]

• Transistor Grade / Operating Range: Military
• Package Type: TO-72 UB

• Polarity: NPN
• T_J: -65 to 200

WPTB32A0912Ax 960-1215 MHz Bipolar RF Transistor. The WPTB32A0912Ax application-specific transistor uses the 3217 L-Band die which was developed for pulsed radar systems. Optimal internal matching delivers high performance for applications such as the MIDS and JTIDS communication systems. Low... [See More]

• Transistor Grade / Operating Range: Military
• Transistor Technology / Material: SiC

• Transistor Type: Bipolar RF
• T_J: 200