Military RF Transistors

Qorvo's TGF3015-SM is a 10W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within... [See More]

• Transistor Grade / Operating Range:
• Package Type: QFN

• Transistor Technology / Material: 0.03 - 3.0 GHz, 10 Watt, 32 Volt GaN RF Input-Matched Transistor
• Power Gain: 17

Qorvo's TGF3021-SM is a 30 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 4 GHz and a 32V supply rail. The device is in an industry standard 3x4mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications,... [See More]

• Transistor Grade / Operating Range:
• Package Type: QFN

• Transistor Technology / Material: GaN
• Power Gain: 19

Qorvo's TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the... [See More]

• Transistor Grade / Operating Range:
• Package Type: QFN

• Transistor Technology / Material: GaN
• Power Gain: 12.7

The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to... [See More]

• Transistor Grade / Operating Range:
• Package Type: QFN

• Transistor Technology / Material: GaN
• Power Gain: 24

Qorvo's TGF2978-SM is a 20 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 3x3mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications,... [See More]

• Transistor Grade / Operating Range:
• Package Type: QFN

• Transistor Technology / Material: GaN
• Power Gain: 11

Qorvo's TGF2979-SM is a 25 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 4 x 3 mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications,... [See More]

• Transistor Grade / Operating Range:
• Package Type: QFN

• Transistor Technology / Material: DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor
• Power Gain: 11

Qorvo's TGF2954 is a discrete 5.04 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2954 typically provides 44.5 dBm of saturated output power with power gain of 19.5 dB at 3 GHz. The maximum power added efficiency is 71.5 % which makes the TGF2954 appropriate for high efficiency... [See More]

• Transistor Grade / Operating Range:
• Package Type: Die

• Transistor Technology / Material: GaN on SiC
• Power Gain: 19.6

Wolfspeed ’s CGHV38375F is a packaged, 400 W HPA matched to 50 ohms at both input and output ports. The CGHV38375F operates from 2.75 – 3.75 GHz providing coverage over the entire S-band radar band. This high-power amplifier provides >10 dB of large signal gain and 40% power-added... [See More]

• Transistor Grade / Operating Range: Commercial; Industrial; Military
• Power Gain: 10

• Transistor Technology / Material: 2.75 - 3.75, 400W GaN on SiC HPA
• Output Power: 400

WPTB32A0912Ax 960-1215 MHz Bipolar RF Transistor. The WPTB32A0912Ax application-specific transistor uses the 3217 L-Band die which was developed for pulsed radar systems. Optimal internal matching delivers high performance for applications such as the MIDS and JTIDS communication systems. Low... [See More]

• Transistor Grade / Operating Range: Military
• Transistor Technology / Material: SiC

• Transistor Type: Bipolar RF
• T_J: 200

SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available in die form... [See More]

• Transistor Grade / Operating Range: Military
• Package Type: TO-72 UB

• Polarity: NPN
• T_J: -65 to 200