Bulk Pack RF Transistors

99 Results
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF -- 1324521-NSVF3007SG3T1G [NSVF3007SG3T1G from onsemi]
from Win Source Electronics

Manufacturer: onsemi. Win Source Part Number: 1324521-NSVF3007SG3T1G. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - RF. Packaging: Bulk. Standard Package: 1. Fake Threat In the Open Market: 83. REACH Status: REACH Unaffected. Other Part Number:... [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: SOT3
2N1556 [2N1556 from Motorola Solutions, Inc.]
from Rochester Electronics

PNP TRANSISTOR [See More]

  • Packing Method: Bulk; Bulk
  • Polarity: PNP
Electronic Wholesale - HOA1889-011 -- 753519-HOA1889-011 [HOA1889-011 from Honeywell Sensing & IoT]
from Win Source Electronics

Manufacturer: Honeywell Sensing and Productivity Solutions. Win Source Part Number: 753519-HOA1889-011. Packaging: Bulk. Type: Unamplified. Mounting Style: Through Hole. Response Time: 15 μs. Output Configuration: Phototransistor. Sensing Method: Transmissive. Family Name: HOA1889-011. Sensing... [See More]

  • Packing Method: Bulk; Bulk
  • TJ: -40 to 85
  • Package Type: SOT3
2N5194 [2N5194 from onsemi]
from Rochester Electronics

4.0 A, 60 V PNP Bipolar Power Transistor [See More]

  • Packing Method: Bulk; Bulk
  • Polarity: PNP
  • Transistor Type: Bipolar RF
  • Package Type: TO-225
Electronic Wholesale - STBV42 -- 1260716-STBV42 [STBV42 from STMicroelectronics]
from Win Source Electronics

Manufacturer: STMicroelectronics. Win Source Part Number: 1260716-STBV42. Packaging: Bulk. Mounting Style: Through Hole. Transistor Type: NPN. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-92-3. Status: Obsolete. Temperature Range - Operating: 150 °C. Manufacturer... [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: TO-92; SOT3
  • Polarity: NPN
  • TJ: 150
2N5401YBU [2N5401YBU from onsemi]
from Rochester Electronics

High Current PNP Bipolar Transistor, TO-92 [See More]

  • Packing Method: Bulk; Bulk
  • Polarity: PNP
  • Transistor Type: Bipolar RF
  • Package Type: TO-92; TO-92-3
Electronic Wholesale - STT13005D-K -- 1262069-STT13005D-K [STT13005D-K from STMicroelectronics]
from Win Source Electronics

Manufacturer: STMicroelectronics. Win Source Part Number: 1262069-STT13005D-K. Packaging: Bulk. Mounting Style: Through Hole. Operating Temperature Range: 150 °C (TJ). Package: TO-225AA, TO-126-3. Power - Max: 45W. Transistor Type: NPN. Family Name: STT13005D. Categories: Discrete Semiconductor... [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: SOT3
  • Polarity: NPN
  • TJ: 150
2SB1202S-E [2SB1202S-E from onsemi]
from Rochester Electronics

Small Signal Bipolar Transistor, 3A, PNP [See More]

  • Packing Method: Bulk; Bulk
  • Polarity: PNP
  • Transistor Type: Bipolar RF; MOSFET RF
  • Package Type: IPAK-3
FETs - Single - 2N6796 -- 1124201-2N6796 [2N6796 from Microsemi Corp.]
from Win Source Electronics

Manufacturer: Microsemi Corporation. Win Source Part Number: 1124201-2N6796. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-39. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: TO-3; TO-39; SOT3
  • Polarity: N-Channel; N-Channel
  • TJ: -55 to 150
2SB1215S-H [2SB1215S-H from onsemi]
from Rochester Electronics

Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA [See More]

  • Packing Method: Bulk; Bulk
  • Polarity: PNP
  • Transistor Type: Bipolar RF
  • Package Type: IPAK / TP
FETs - Single - 2N6798 -- 1124203-2N6798 [2N6798 from Microsemi Corp.]
from Win Source Electronics

Manufacturer: Microsemi Corporation. Win Source Part Number: 1124203-2N6798. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-39. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: TO-3; TO-39; SOT3
  • Polarity: N-Channel; N-Channel
  • TJ: -55 to 150
2SC4617 [2SC4617 from onsemi]
from Rochester Electronics

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon [See More]

  • Packing Method: Bulk; Bulk
  • Polarity: NPN
  • Transistor Type: Bipolar RF; MOSFET RF
  • Package Type: SC-75 (SOT-416)
FETs - Single - AO3421L -- 722174-AO3421L [AO3421L from Alpha & Omega Semiconductor, Ltd.]
from Win Source Electronics

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 722174-AO3421L. Packaging: Bulk. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: SOT-23-3L. Drive Voltage (Max Rds On, Min Rds... [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: SOT3; SOT23
  • Polarity: P-Channel; P-Channel
  • TJ: -55 to 150
2SD1835T [2SD1835T from onsemi]
from Rochester Electronics

Bipolar NPN Transistor, 2A 50V [See More]

  • Packing Method: Bulk; Bulk
  • Polarity: NPN
  • Transistor Type: Bipolar RF
  • Package Type: SIP3
FETs - Single - AO4490L -- 1144781-AO4490L [AO4490L from Alpha & Omega Semiconductor, Ltd.]
from Win Source Electronics

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1144781-AO4490L. Packaging: Bulk. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: 8-SO. Drive Voltage (Max Rds On, Min Rds On):... [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: SOT3
  • Polarity: N-Channel; N-Channel
  • TJ: -55 to 150
BD13716S [BD13716S from onsemi]
from Rochester Electronics

1.5 A, 60 V NPN Power Bipolar Junction Transistor [See More]

  • Packing Method: Bulk; Bulk
  • Polarity: NPN
  • Transistor Type: Bipolar RF
  • Package Type: TO-126-3
FETs - Single - JANTX2N6764 -- 1191521-JANTX2N6764 [JANTX2N6764 from Microsemi Corp.]
from Win Source Electronics

Manufacturer: Microsemi Corporation. Win Source Part Number: 1191521-JANTX2N6764. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-3. Drive Voltage (Max Rds On, Min Rds On):... [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: TO-3; SOT3
  • Polarity: N-Channel; N-Channel
  • TJ: -55 to 150
BD239C [BD239C from onsemi]
from Rochester Electronics

NPN Epitaxial Silicon Transistor [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: TO-220; TO-220
  • Polarity: NPN
FETs - Single - JANTX2N6768 -- 1191523-JANTX2N6768 [JANTX2N6768 from Microsemi Corp.]
from Win Source Electronics

Manufacturer: Microsemi Corporation. Win Source Part Number: 1191523-JANTX2N6768. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-3. Drive Voltage (Max Rds On, Min Rds On):... [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: TO-3; SOT3
  • Polarity: N-Channel; N-Channel
  • TJ: -55 to 150
BLF6G22LS-75,112 [BLF6G22LS-75,112 from Ampleon]
from Rochester Electronics

LDMOS RF Power Transistor [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: SOT502B
IGBTs - Single - IRG4PC30S -- 710531-IRG4PC30S [IRG4PC30S from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 710531-IRG4PC30S. Packaging: Bulk. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 68A. Switching Energy: 260 μJ (on), 3.45mJ (off). Input Type: Standard. Gate Charge: 50nC. Test Condition: 480V, 18A, 23Ohm, 15V. [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: TO-247; SOT3
  • Transistor Type: Bipolar RF
  • TJ: -55 to 150
BLF7G22L-130,112 [BLF7G22L-130,112 from NXP Semiconductors]
from Rochester Electronics

RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: SOT502A
  • Polarity: N-Channel
IGBTs - Single - IRG4PC30U -- 1188266-IRG4PC30U [IRG4PC30U from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1188266-IRG4PC30U. Packaging: Bulk. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 92A. Switching Energy: 160 μJ (on), 200 μJ (off). Input Type: Standard. Gate Charge: 50nC. Test Condition: 480V, 12A, 23Ohm, 15V. [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: TO-247; SOT3
  • Transistor Type: Bipolar RF
  • TJ: -55 to 150
LYE16350XH [LYE16350XH from Ampleon]
from Rochester Electronics

LYE16350XH - RF Power Transistor (Cus Special) [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: SOT473A
IGBTs - Single - IRG4PC40FD -- 1188270-IRG4PC40FD [IRG4PC40FD from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1188270-IRG4PC40FD. Packaging: Bulk. Mounting Style: Through Hole. Reverse Recovery Time (trr): 42ns. Current - Collector Pulsed (Icm): 200A. Switching Energy: 950 μJ (on), 2.01mJ (off). Input Type: Standard. Gate Charge: 100nC. Test... [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: TO-247; SOT3
  • Transistor Type: Bipolar RF
  • TJ: -55 to 150
MRF21125R3 [MRF21125R3 from NXP Semiconductors]
from Rochester Electronics

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: SOT-957
  • Polarity: N-Channel
IGBTs - Single - IRG4PC40KPBF -- 1188274-IRG4PC40KPBF [IRG4PC40KPBF from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1188274-IRG4PC40KPBF. Packaging: Bulk. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 84A. Switching Energy: 620 μJ (on), 330 μJ (off). Input Type: Standard. Gate Charge: 120nC. Test Condition: 480V, 25A, 10Ohm,... [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: TO-247; SOT3
  • Transistor Type: Bipolar RF
  • TJ: -55 to 150
MX0912B351Y [MX0912B351Y from Ampleon]
from Rochester Electronics

MX0912B351Y - NPN Silicon RF Power Transistor [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: SOT439A
  • Polarity: NPN
IGBTs - Single - IRG4PC40UPBF -- 1188278-IRG4PC40UPBF [IRG4PC40UPBF from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1188278-IRG4PC40UPBF. Packaging: Bulk. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 160A. Switching Energy: 320 μJ (on), 350 μJ (off). Input Type: Standard. Gate Charge: 100nC. Test Condition: 480V, 20A, 10Ohm,... [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: TO-247; SOT3
  • Transistor Type: Bipolar RF
  • TJ: -55 to 150
SFH 300 [SFH 300 from ams-OSRAM AG]
from Rochester Electronics

Radial T1 3/4 Silicon NPN Phototransistor [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: Clear Epoxy
  • Polarity: NPN
IGBTs - Single - IRG4PH20K -- 801536-IRG4PH20K [IRG4PH20K from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 801536-IRG4PH20K. Packaging: Bulk. Mounting Style: Through Hole. Power - Max: 60W. Current - Collector Pulsed (Icm): 22A. Switching Energy: 450 μJ (on), 440 μJ (off). Input Type: Standard. Gate Charge: 28nC. Test Condition: 960V,... [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: TO-247; SOT3
  • Transistor Type: Bipolar RF
  • TJ: -55 to 150
IGBTs - Single - IRG4PH20KD -- 1188290-IRG4PH20KD [IRG4PH20KD from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1188290-IRG4PH20KD. Packaging: Bulk. Mounting Style: Through Hole. Reverse Recovery Time (trr): 51ns. Current - Collector Pulsed (Icm): 22A. Switching Energy: 620 μJ (on), 300 μJ (off). Input Type: Standard. Gate Charge: 28nC. [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: TO-247; SOT3
  • Transistor Type: Bipolar RF
  • TJ: -55 to 150
IGBTs - Single - IRG4PH40K -- 1188292-IRG4PH40K [IRG4PH40K from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1188292-IRG4PH40K. Packaging: Bulk. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 60A. Switching Energy: 730 μJ (on), 1.66mJ (off). Input Type: Standard. Gate Charge: 94nC. Test Condition: 960V, 15A, 10Ohm, 15V. [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: TO-247; SOT3
  • Transistor Type: Bipolar RF
  • TJ: -55 to 150
IGBTs - Single - IRG4PSC71KD -- 1188306-IRG4PSC71KD [IRG4PSC71KD from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1188306-IRG4PSC71KD. Packaging: Bulk. Mounting Style: Through Hole. Reverse Recovery Time (trr): 82ns. Current - Collector Pulsed (Icm): 200A. Switching Energy: 3.95mJ (on), 2.33mJ (off). Input Type: Standard. Gate Charge: 340nC. Test... [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: SOT3
  • Transistor Type: Bipolar RF
  • TJ: -55 to 150
IGBTs - Single - IRG4PSC71KDPBF -- 1188307-IRG4PSC71KDPBF [IRG4PSC71KDPBF from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1188307-IRG4PSC71KDPBF. Packaging: Bulk. Mounting Style: Through Hole. Reverse Recovery Time (trr): 82ns. Current - Collector Pulsed (Icm): 200A. Switching Energy: 3.95mJ (on), 2.33mJ (off). Input Type: Standard. Gate Charge: 340nC. Test... [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: SOT3
  • Transistor Type: Bipolar RF
  • TJ: -55 to 150
IGBTs - Single - IRG4PSC71UPBF -- 1188310-IRG4PSC71UPBF [IRG4PSC71UPBF from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1188310-IRG4PSC71UPBF. Packaging: Bulk. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 200A. Switching Energy: 420 μJ (on), 1.99mJ (off). Input Type: Standard. Gate Charge: 340nC. Test Condition: 480V, 60A, 5Ohm, 15V. [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: SOT3
  • Transistor Type: Bipolar RF
  • TJ: -55 to 150
IGBTs - Single - IRG4PSH71KD -- 1188312-IRG4PSH71KD [IRG4PSH71KD from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1188312-IRG4PSH71KD. Packaging: Bulk. Mounting Style: Through Hole. Reverse Recovery Time (trr): 107ns. Current - Collector Pulsed (Icm): 156A. Switching Energy: 5.68mJ (on), 3.23mJ (off). Input Type: Standard. Gate Charge: 410nC. Test... [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: SOT3
  • Transistor Type: Bipolar RF
  • TJ: -55 to 150
IGBTs - Single - IRG4PSH71UD -- 1188314-IRG4PSH71UD [IRG4PSH71UD from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1188314-IRG4PSH71UD. Packaging: Bulk. Mounting Style: Through Hole. Reverse Recovery Time (trr): 110ns. Current - Collector Pulsed (Icm): 200A. Switching Energy: 8.8mJ (on), 9.4mJ (off). Input Type: Standard. Gate Charge: 380nC. Test... [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: SOT3
  • Transistor Type: Bipolar RF
  • TJ: -55 to 150
IGBTs - Single - IRGPC40U -- 1188385-IRGPC40U [IRGPC40U from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1188385-IRGPC40U. Packaging: Bulk. Mounting Style: Through Hole. Input Type: Standard. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247AC. Status: Obsolete. Temperature Range - Operating: -55 °C ~ 150... [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: TO-247; SOT3
  • Transistor Type: Bipolar RF
  • TJ: -55 to 150
IGBTs - Single - IRGPC50F -- 1188386-IRGPC50F [IRGPC50F from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1188386-IRGPC50F. Packaging: Bulk. Mounting Style: Through Hole. Input Type: Standard. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247AC. Status: Obsolete. Temperature Range - Operating: -55 °C ~ 150... [See More]

  • Packing Method: Bulk; Bulk
  • Package Type: TO-247; SOT3
  • Transistor Type: Bipolar RF
  • TJ: -55 to 150
Microcurrent transistors for battery operations -- AT-30511
from Broadcom Inc.

Microcurrent device offering good RF performance at 1mA-5mA. The AT-305XX is housed in two packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1.1dB, Gain=16dB at 3V, 1mA; P1dB= 7dBm at 3V, 5mA (all at 900 MHz) [See More]

  • Packing Method: Tape Reel; Bulk
  • Polarity: NPN; NPN
  • Transistor Type: Bipolar RF
  • Transistor Technology / Material: Silicon
Discrete Semiconductor Products - Current Regulation - Diodes, Transistors -- 1N5283 [1N5283 from Microchip Technology, Inc.]
from Acme Chip Technology Co., Limited

DIODE CUR REG 100V 242UA 500MW [See More]

  • Packing Method: Bulk; Bulk
  • Output Power: 0.5000
  • Package Type: Through Hole
FET RF 65V 945MHZ M250 -- 761-SD57030-01 [SD57030-01 from STMicroelectronics]
from Utmel Electronic Limited

FET RF 65V 945MHZ M250 [See More]

  • Packing Method: Bulk; Bulk
  • Number of units in IC: 1
  • Polarity: N-Channel; N-CHANNEL
  • TJ: -65 to 200
Microcurrent transistors for battery operations -- AT-32032
from Broadcom Inc.

Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at 3V, 20mA (all at 900 MHz) [See More]

  • Packing Method: Tape Reel; Bulk
  • Polarity: NPN; NPN
  • Transistor Type: Bipolar RF
  • Transistor Technology / Material: Silicon
ON SEMICONDUCTOR MJE210G. RF TRANSISTOR, PNP, -25V, 65MHZ, TO-225 -- 598-MJE210G [MJE210G from onsemi]
from Utmel Electronic Limited

ON SEMICONDUCTOR MJE210G. RF TRANSISTOR, PNP, -25V, 65MHZ, TO-225 [See More]

  • Packing Method: Bulk; Bulk
  • Transistor Technology / Material: SILICON
  • Polarity: PNP; PNP
  • Number of units in IC: 1
Microcurrent transistors for battery operations -- AT-32033
from Broadcom Inc.

Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at 3V, 20mA (all at 900 MHz) [See More]

  • Packing Method: Tape Reel; Bulk
  • Polarity: NPN; NPN
  • Transistor Type: Bipolar RF
  • Transistor Technology / Material: Silicon
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single -- 2N1489 [2N1489 from Microsemi Corp.]
from Shenzhen Shengyu Electronics Technology Limited

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

  • Packing Method: Bulk; Through Hole
  • TJ: 200
RF FET LDMOS 65V 23DB SOT608B -- 38-BLF6G10S-45,112 [BLF6G10S-45,112 from Ampleon]
from Utmel Electronic Limited

RF FET LDMOS 65V 23DB SOT608B [See More]

  • Packing Method: Bulk; Bulk
  • Output Power: 1
  • Power Gain: 23
Microcurrent transistors for battery operations -- AT-32063
from Broadcom Inc.

Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at 3V, 20mA (all at 900 MHz) [See More]

  • Packing Method: Tape Reel; Bulk
  • Polarity: NPN; NPN
  • Transistor Type: Bipolar RF
  • Transistor Technology / Material: Silicon
Discrete Semiconductor Products - Current Regulation - Diodes, Transistors -- 1N5287UR-1 [1N5287UR-1 from Microchip Technology, Inc.]
from Acme Chip Technology Co., Limited

DIODE CUR REG 100V 363UA 500MW [See More]

  • Packing Method: Bulk; Bulk
  • Output Power: 0.5000
  • Package Type: DO-213AB (MELF, LL41)
RF TRANS NPN 15V 800MHZ TO92-3 -- 598-MPSH17 [MPSH17 from onsemi]
from Utmel Electronic Limited

RF TRANS NPN 15V 800MHZ TO92-3 [See More]

  • Packing Method: Bulk; Bulk
  • Transistor Technology / Material: SILICON
  • Polarity: NPN; NPN
  • Number of units in IC: 1
Discrete Semiconductor Products - Current Regulation - Diodes, Transistors -- E-101 [E-101 from Semitec USA Corp.]
from Acme Chip Technology Co., Limited

CURRENT REGULATOR DIODES 100V .1 [See More]

  • Packing Method: Bulk; Bulk
  • Output Power: 0.3000
  • Package Type: Through Hole
Transistors RF Bipolar Transistor Si Low Current -- 107-AT-32032-BLKG [AT-32032-BLKG from Broadcom Inc.]
from Utmel Electronic Limited

Transistors RF Bipolar Transistor Si Low Current [See More]

  • Packing Method: Bulk; Bulk
  • Polarity: NPN; NPN
  • Transistor Type: Bipolar RF
  • Transistor Technology / Material: SILICON
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single -- 2SA1371E-AE [2SA1371E-AE from Sanyo Denki America, Inc.]
from Acme Chip Technology Co., Limited

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

  • Packing Method: Bulk; Through Hole
  • TJ: 150