TO-247 RF Transistors
from Win Source Electronics
Win Source Part Number: 1050109-BUTW92. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Single. Package: Tube. Standard Package: 30. Power - Max: 180 W. Voltage - Collector Emitter Breakdown (Max): 250 V. Current - Collector (Ic) (Max): 45 A. Transistor Type: NPN. Vce... [See More]
- Package Type: TO-247; SOT3
- Polarity: NPN
- Transistor Type: Bipolar RF
- TJ: 150
from ODG (Origin Data Global)
FET RF N-CH 500V 14A TO247 [See More]
- Package Type: TO-247; TO-247-3
- Polarity: N-Channel; N-Channel
- Transistor Type: MOSFET RF; MOSFET
- Transistor Technology / Material: MOSFET
from Rochester Electronics
Power Bipolar Transistor, 10A, 100V, PNP, TO-247, Plastic/Epoxy, 3 Pin [See More]
- Package Type: TO-247; TO-247
- Polarity: PNP
- Transistor Type: Bipolar RF
- Packing Method: Tube; Tube
from Win Source Electronics
Win Source Part Number: 1078918-MJW0302AG. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Single. Package: Tube. Standard Package: 30. Power - Max: 150 W. Voltage - Collector Emitter Breakdown (Max): 260 V. Current - Collector (Ic) (Max): 15 A. Transistor Type: PNP. Vce... [See More]
- Package Type: TO-247; SOT3
- Polarity: PNP
- Transistor Type: Bipolar RF
- TJ: -65 to 150
from ODG (Origin Data Global)
RF MOSFET LDMOS 50V TO247 [See More]
- Package Type: TO-247; TO-247-3
- Transistor Technology / Material: LDMOS
- Transistor Type: MOSFET RF; LDMOS
- Power Gain: 28
from Win Source Electronics
Win Source Part Number: 1382891-MJW16212. Category: Discrete Semiconductor Products >Transistors >Bipolar (BJT) >Single Bipolar Transistors. Series: SCANSWITCH ™. Package: Bulk. Standard Package: 61 pcs. Power - Max: 150 W. Voltage - Collector Emitter Breakdown (Max): 650 V. Current -... [See More]
- Package Type: TO-247; SOT3
- Polarity: NPN
- Transistor Type: Bipolar RF
- TJ: -55 to 150
from Win Source Electronics
Win Source Part Number: 1096721-STC04IE170HV. Category: Discrete Semiconductor Products >Transistors - Special Purpose. Package: Tube. Applications: Gate Driver. Standard Package: 30. Voltage - Rated: 1700V (1.7kV). Transistor Type: NPN - Emitter Switched Bipolar. Mounting Type: Through Hole. [See More]
- Package Type: TO-247; SOT3
- Polarity: NPN
- Transistor Type: Bipolar RF
from Win Source Electronics
Manufacturer: Siemens. Win Source Part Number: 1156471-BUZ357. Family Name: BUZ357. Manufacturer Homepage: www.siemens.com/. Introduction Date: January 01, 2000. ECCN: EAR99. Estimated EOL Date: Obsolete / End of life. Is this a common-used part?: Yes. Popularity: High. Fake Threat In the Open... [See More]
- Package Type: TO-247; SOT3
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 710531-IRG4PC30S. Packaging: Bulk. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 68A. Switching Energy: 260 μJ (on), 3.45mJ (off). Input Type: Standard. Gate Charge: 50nC. Test Condition: 480V, 18A, 23Ohm, 15V. [See More]
- Package Type: TO-247; SOT3
- Packing Method: Bulk; Bulk
- Transistor Type: Bipolar RF
- TJ: -55 to 150
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1188266-IRG4PC30U. Packaging: Bulk. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 92A. Switching Energy: 160 μJ (on), 200 μJ (off). Input Type: Standard. Gate Charge: 50nC. Test Condition: 480V, 12A, 23Ohm, 15V. [See More]
- Package Type: TO-247; SOT3
- Packing Method: Bulk; Bulk
- Transistor Type: Bipolar RF
- TJ: -55 to 150
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1188270-IRG4PC40FD. Packaging: Bulk. Mounting Style: Through Hole. Reverse Recovery Time (trr): 42ns. Current - Collector Pulsed (Icm): 200A. Switching Energy: 950 μJ (on), 2.01mJ (off). Input Type: Standard. Gate Charge: 100nC. Test... [See More]
- Package Type: TO-247; SOT3
- Packing Method: Bulk; Bulk
- Transistor Type: Bipolar RF
- TJ: -55 to 150
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1188274-IRG4PC40KPBF. Packaging: Bulk. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 84A. Switching Energy: 620 μJ (on), 330 μJ (off). Input Type: Standard. Gate Charge: 120nC. Test Condition: 480V, 25A, 10Ohm,... [See More]
- Package Type: TO-247; SOT3
- Packing Method: Bulk; Bulk
- Transistor Type: Bipolar RF
- TJ: -55 to 150
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1188278-IRG4PC40UPBF. Packaging: Bulk. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 160A. Switching Energy: 320 μJ (on), 350 μJ (off). Input Type: Standard. Gate Charge: 100nC. Test Condition: 480V, 20A, 10Ohm,... [See More]
- Package Type: TO-247; SOT3
- Packing Method: Bulk; Bulk
- Transistor Type: Bipolar RF
- TJ: -55 to 150
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 801536-IRG4PH20K. Packaging: Bulk. Mounting Style: Through Hole. Power - Max: 60W. Current - Collector Pulsed (Icm): 22A. Switching Energy: 450 μJ (on), 440 μJ (off). Input Type: Standard. Gate Charge: 28nC. Test Condition: 960V,... [See More]
- Package Type: TO-247; SOT3
- Packing Method: Bulk; Bulk
- Transistor Type: Bipolar RF
- TJ: -55 to 150
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1188290-IRG4PH20KD. Packaging: Bulk. Mounting Style: Through Hole. Reverse Recovery Time (trr): 51ns. Current - Collector Pulsed (Icm): 22A. Switching Energy: 620 μJ (on), 300 μJ (off). Input Type: Standard. Gate Charge: 28nC. [See More]
- Package Type: TO-247; SOT3
- Packing Method: Bulk; Bulk
- Transistor Type: Bipolar RF
- TJ: -55 to 150
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1188292-IRG4PH40K. Packaging: Bulk. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 60A. Switching Energy: 730 μJ (on), 1.66mJ (off). Input Type: Standard. Gate Charge: 94nC. Test Condition: 960V, 15A, 10Ohm, 15V. [See More]
- Package Type: TO-247; SOT3
- Packing Method: Bulk; Bulk
- Transistor Type: Bipolar RF
- TJ: -55 to 150
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1188323-IRG7PH35UD-EP. Packaging: Tube. Mounting Style: Through Hole. Reverse Recovery Time (trr): 105ns. IGBT Type: Trench. Current - Collector Pulsed (Icm): 60A. Switching Energy: 1.06mJ (on), 620 μJ (off). Input Type: Standard. [See More]
- Package Type: TO-247; SOT3
- Packing Method: Tube; Tube
- Transistor Type: Bipolar RF
- TJ: -55 to 150
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1188324-IRG7PH35UDPBF. Packaging: Tube. Mounting Style: Through Hole. Reverse Recovery Time (trr): 105ns. IGBT Type: Trench. Current - Collector Pulsed (Icm): 60A. Switching Energy: 1.06mJ (on), 620 μJ (off). Input Type: Standard. [See More]
- Package Type: TO-247; SOT3
- Packing Method: Tube; Tube
- Transistor Type: Bipolar RF
- TJ: -55 to 150
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1188325-IRG7PH37K10D-EPBF. Packaging: Tube. Mounting Style: Through Hole. Reverse Recovery Time (trr): 120ns. Current - Collector Pulsed (Icm): 60A. Switching Energy: 1mJ (on), 600 μJ (off). Input Type: Standard. Gate Charge: 135nC. [See More]
- Package Type: TO-247; SOT3
- Packing Method: Tube; Tube
- Transistor Type: Bipolar RF
- TJ: -40 to 150
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1188326-IRG7PH37K10DPBF. Packaging: Tube. Mounting Style: Through Hole. Reverse Recovery Time (trr): 120ns. Current - Collector Pulsed (Icm): 60A. Switching Energy: 1mJ (on), 600 μJ (off). Input Type: Standard. Gate Charge: 135nC. [See More]
- Package Type: TO-247; SOT3
- Packing Method: Tube; Tube
- Transistor Type: Bipolar RF
- TJ: -40 to 150
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1188329-IRG7PH42U-EP. Packaging: Tube. Mounting Style: Through Hole. Reverse Recovery Time (trr): 153ns. IGBT Type: Trench. Current - Collector Pulsed (Icm): 90A. Switching Energy: 2.11mJ (on), 1.18mJ (off). Input Type: Standard. Gate... [See More]
- Package Type: TO-247; SOT3
- Packing Method: Tube; Tube
- Transistor Type: Bipolar RF
- TJ: -55 to 175
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1188330-IRG7PH44K10DPBF. Packaging: Tube. Mounting Style: Through Hole. Reverse Recovery Time (trr): 130ns. Current - Collector Pulsed (Icm): 100A. Switching Energy: 2.1mJ (on), 1.3mJ (off). Input Type: Standard. Gate Charge: 200nC. Test... [See More]
- Package Type: TO-247; SOT3
- Packing Method: Tube; Tube
- Transistor Type: Bipolar RF
- TJ: -40 to 150
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1188332-IRG7PK35UD1PBF. Packaging: Tube. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 200A. Switching Energy: 650 μJ (off). Input Type: Standard. Gate Charge: 98nC. Test Condition: 600V, 20A, 10Ohm, 15V. Categories:... [See More]
- Package Type: TO-247; SOT3
- Packing Method: Tube; Tube
- Transistor Type: Bipolar RF
- TJ: -40 to 150
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1188333-IRG8P40N120KDPBF. Packaging: Tube. Mounting Style: Through Hole. Reverse Recovery Time (trr): 80ns. Current - Collector Pulsed (Icm): 75A. Switching Energy: 1.6mJ (on), 1.8mJ (off). Input Type: Standard. Gate Charge: 240nC. Test... [See More]
- Package Type: TO-247; SOT3
- Packing Method: Tube; Tube
- Transistor Type: Bipolar RF
- TJ: -40 to 150
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1188360-IRGP30B120KD-EP. Packaging: Tube. Mounting Style: Through Hole. Reverse Recovery Time (trr): 300ns. IGBT Type: NPT. Current - Collector Pulsed (Icm): 120A. Switching Energy: 1.07mJ (on), 1.49mJ (off). Input Type: Standard. Gate... [See More]
- Package Type: TO-247; SOT3
- Packing Method: Tube; Tube
- Transistor Type: Bipolar RF
- TJ: -55 to 150
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1188364-IRGP4063D1PBF. Packaging: Tube. Mounting Style: Through Hole. Reverse Recovery Time (trr): 80ns. Current - Collector Pulsed (Icm): 192A. Switching Energy: 1.4mJ (on), 1.1mJ (off). Input Type: Standard. Gate Charge: 150nC. Test... [See More]
- Package Type: TO-247; SOT3
- Packing Method: Tube; Tube
- Transistor Type: Bipolar RF
- TJ: -40 to 175
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1188365-IRGP4063PBF. Packaging: Tube. Mounting Style: Through Hole. IGBT Type: Trench. Current - Collector Pulsed (Icm): 144A. Switching Energy: 625 μJ (on), 1.28mJ (off). Input Type: Standard. Gate Charge: 95nC. Test Condition: 400V,... [See More]
- Package Type: TO-247; SOT3
- Packing Method: Tube; Tube
- Transistor Type: Bipolar RF
- TJ: -55 to 175
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1188367-IRGP4069PBF. Packaging: Tube. Mounting Style: Through Hole. IGBT Type: Trench. Current - Collector Pulsed (Icm): 105A. Switching Energy: 390 μJ (on), 632 μJ (off). Input Type: Standard. Gate Charge: 104nC. Test Condition:... [See More]
- Package Type: TO-247; SOT3
- Packing Method: Tube; Tube
- Transistor Type: Bipolar RF
- TJ: -55 to 175
from Shenzhen Shengyu Electronics Technology Limited
TRANS NPN 700V 8A TO247-3 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
SICFET N-CH 700V 110A TO247-3 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Bulk; Bulk
from Shenzhen Shengyu Electronics Technology Limited
MOSFET N-CH 300V 46A TO247AC [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
75M 1200V 175C SIC FET [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
SICFET N-CH 1200V 52A TO247-3 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
75M 1200V 175C SIC FET [See More]
- Package Type: TO-247; TO-247-4
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
MOSFET N-CH 600V 24A TO247 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
SIC MOSFET N-CH 4A TO247-3 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
MOSFET N-CH 500V 58A T-MAX [See More]
- Package Type: TO-247; TO-247-3 Variant
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
3300V 50M TO-247-4 SIC MOSFET [See More]
- Package Type: TO-247; TO-247-4
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
MOSFET N-CH 1000V 8A TO247 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
SIC MOSFET N-CH 128A TO247-4 [See More]
- Package Type: TO-247; TO-247-4
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
MOSFET N-CH 1200V 12A TO247 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
750V 60M TO-247-4 G3R SIC MOSFET [See More]
- Package Type: TO-247; TO-247-4
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
MOSFET N-CH 1200V 14A TO247 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRANS SJT 1700V 16A TO247AB [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
RF MOSFET 150V TO247 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
GAN041-650WSB/SOT429/TO-247 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
RF MOSFET 125V TO247CS [See More]
- Package Type: TO-247; TO-247CS
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
SIC MOSFET 1200V 80M TO-247-3L [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
SICFET N-CH 1200V 90A TO247-3 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
SIC DISCRETE [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
SICFET N-CH 1700V 72A TO247-4 [See More]
- Package Type: TO-247; TO-247-4
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
SIC DISCRETE [See More]
- Package Type: TO-247; TO-247-4
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
SICFET N-CH 1700V 40A TO247-4 [See More]
- Package Type: TO-247; TO-247-4
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
SIC DISCRETE [See More]
- Package Type: TO-247; TO-247-4
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
SICFET N-CH 650V 120A TO247-4L [See More]
- Package Type: TO-247; TO-247-4
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
SIC DISCRETE [See More]
- Package Type: TO-247; TO-247-4
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
SICFET N-CH 1200V 24A TO247 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
650V COOLMOS CFD7A SJ POWER DEVI [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
SICFET N-CH 900V 35A TO247-3 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRENCH >=100V PG-TO247-3 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
MOSFET N-CH 650V 75A TO247 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
MOSFET N-CH 500V 20A TO247-3 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
MOSFET N-CH 650V 75A TO247 [See More]
- Package Type: TO-247; TO-247-4
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRENCH >=100V [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
MOSFET N-CH 600V 77A TO247-3 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
SIC MOSFET, 1200V 50MOHM, TO-247 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
MOSFET N-CH 650V 76A TO247-4 [See More]
- Package Type: TO-247; TO-247-4
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
SIC MOSFET, 1200V 50MOHM, TO-247 [See More]
- Package Type: TO-247; TO-247-4
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
MOSFET N-CH 650V 24A TO247-3 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
MOSFET 34A 650V X3 TO247 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
MOSFET N-CH 600V 35A TO247-3 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Bulk; Bulk
from Acme Chip Technology Co., Limited
MOSFET ULTRA JCT 600V 78A TO247 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
SIC MOSFET N-CH 61A TO247-4 [See More]
- Package Type: TO-247; TO-247-4
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
MOSFET N-CH 2200V 600MA TO247HV [See More]
- Package Type: TO-247; TO-247-3 Variant
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
SIC MOSFET N-CH 41A TO247-3 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
MOSFET N-CH 75V 140A TO247 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
TRANS SJT 1700V 4A TO247AB [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
MOSFET N-CH 200V 220A X4 TO-247 [See More]
- Package Type: TO-247; TO-247-3
- Packing Method: Tube; Tube