Tape Reel RF Transistors

PNP Epitaxial Planar Silicon Transistor [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: SOT323; SC-70 (SOT-323)

• Polarity: PNP

Manufacturer: Renesas Electronics America. Win Source Part Number: 095608-2SC1623-T1B-A. Category: Bipolar Small Signal. Packaging: Tape and Reel. Operating Temp Range: -55C to 150C. Mounting: Surface Mount. Pin Count: 3. Operating Temperature Classification: Military. Rad Hardened: No. Package... [See More]

• Packing Method: Tape Reel; Tape and Reel
• Package Type: SOT3

• Polarity: NPN; NPN
• Output Power: ? to 0.2000

NPN Silicon RF Transistor. Summary of Features. For low noise, high-gain amplifiers up to 2 GHz. For linear broadband amplifiers. fT = 8 GHz, NFmin = 1 dB at 900 MHz. Pb-free (RoHS compliant) package. Potential Applications. Wireless Communications. LNA in RF Front-end. For various applications like... [See More]

• Packing Method: Tape Reel; TAPE & REEL

• Package Type: SOT343

Bipolar Transistor, 15V, 1A, Low VCE(sat) NPN Single MCPH3 [See More]

• Packing Method: Tape Reel; Tape & Reel
• Polarity: NPN

• Transistor Type: Bipolar RF
• Package Type: SC 70FL / MCPH3

Manufacturer: NXP. Win Source Part Number: 096029-BC807-25. Category: Bipolar Small Signal. Packaging: Tape and Reel. Operating Temp Range: -55C to 15C. Mounting: Surface Mount. Pin Count: 3. Operating Temperature Classification: Military. Rad Hardened: No. Package Type: SOT-23. Frequency: 1(MHz). [See More]

• Packing Method: Tape Reel; Tape and Reel
• Package Type: SOT3

• Polarity: PNP; PNP
• Power Gain: 16

NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchmark quality and... [See More]

• Packing Method: Tape Reel; TAPE & REEL

• Package Type: SOT343-4-1

RF Small Signal Bipolar Transistor [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: SC-60

• Transistor Type: Bipolar RF; MOSFET RF

Manufacturer: Toshiba Semiconductor and Storage. Storage Condition: Dry storage cabinet & Humidity protection package. Win Source Part Number: 1189472-TLP185(GB-TPL,E(O. Packaging: Tape and Reel. Voltage: 80 V. Reverse Breakdown Voltage: 5 V. Number of Elements: 1. Forward Voltage: 1.25 V. Power... [See More]

• Packing Method: Tape Reel; Tape and Reel
• T_J: -55

• Package Type: SOT3; SO
• Output Power: ? to 0.2000

NPN Silicon Germanium RF Transistor. Summary of Features. For medium power amplifiers and driver stages. High OIP3 and P-1dB. Ideal for low phase noise oscilators. Maxim. available Gain Gma = 21.5 dB at 1.8 GHz. Noise figure F = 0.8 dB at 1.8 GHz. 70 GHz fT- Silicon Germanium technology. Pb-free... [See More]

• Packing Method: Tape Reel; TAPE & REEL

• Package Type: TSFP-4-1

Small Signal Bipolar Transistor, 0.6A, 40V, PNP, TO-92 [See More]

• Packing Method: Tape Reel; Tape & Reel
• Polarity: PNP

• Transistor Type: Bipolar RF; MOSFET RF
• Package Type: TO-92; TO-92

Manufacturer: ON Semiconductor. Win Source Part Number: 1232592-NTMFS5C670NLT1G. Packaging: Reel - TR. Operating Temperature Range: -55 °C ~ 175 °C (TJ). Package: 8-PowerTDFN. Mounting: SMD. Technology: MOSFET. Current - Continuous Drain (Id) @ 25 °C: 17A (Ta), 71A (Tc). Family Name:... [See More]

• Packing Method: Tape Reel; Reel - TR
• T_J: -55 to 175

• Package Type: SOT3

The BFP760 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT). Summary of Features. Low noise figure NFmin = 0.95 dB @ 5.5 GHz, 3 V, 10 mA. High gain Gms = 16.5 dB at 5.5 GHz, 3 V, 30 mA. OIP3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA. Potential Applications. [See More]

• Packing Method: Tape Reel; TAPE & REEL

• Package Type: SOT343-4-2

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon [See More]

• Packing Method: Tape Reel; Tape & Reel
• Polarity: PNP

• Transistor Type: Bipolar RF; MOSFET RF
• Package Type: SOT323

Manufacturer: Fairchild/ON Semiconductor. Win Source Part Number: 1174321-FJB5555TM. Packaging: Reel - TR. Operating Temperature Range: 150 °C (TJ). Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB. Mounting: SMD. Power - Max: 1.6W. Transistor Type: NPN. Family Name: FJB5555. Categories:... [See More]

• Packing Method: Tape Reel; Reel - TR
• Package Type: TO-263; SOT3

• Polarity: NPN
• T_J: 150

NPN Silicon RF Transistor. Summary of Features. For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA. Pb-free (RoHS compliant) package. Potential Applications. Satellite Receivers. Set Top Box. TV [See More]

• Packing Method: Tape Reel; TAPE & REEL

• Package Type: SOT89; SOT89

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon [See More]

• Packing Method: Tape Reel; Tape & Reel
• Polarity: PNP

• Transistor Type: Bipolar RF; MOSFET RF
• Package Type: SC-75

Manufacturer: Infineon Technologies. Win Source Part Number: 1186154-IPD50R399CP. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Family Name: IPD50R399CP. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO252-3. Drive... [See More]

• Packing Method: Tape Reel; Tape and Reel
• Package Type: SOT3; TO-252 (DPAK)

• Polarity: N-Channel; N-Channel
• T_J: -55 to 150

NPN Silicon RF Transistor. Summary of Features. High linearity low noise RF transistor. 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA. For UHF / VHF applications. Driver for multistage amplifiers. For linear broadband and antenna amplifiers. Collector design supports 5 V supply voltage. Pb-free... [See More]

• Packing Method: Tape Reel; TAPE & REEL

• Package Type: SOT23; SOT23

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon [See More]

• Packing Method: Tape Reel; Tape & Reel
• Polarity: PNP

• Transistor Type: Bipolar RF; MOSFET RF
• Package Type: SOT883

Manufacturer: Infineon Technologies. Win Source Part Number: 1186170-IPD60R950C6. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Family Name: IPD60R950C6. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO252-3. Drive Voltage (Max... [See More]

• Packing Method: Tape Reel; Reel
• Package Type: SOT3; TO-252 (DPAK)

• Polarity: N-Channel; N-Channel
• T_J: -55 to 150

NPN Silicon RF Transistor. Summary of Features. For low noise, high-gain amplifiers up to 2 GHz. For linear broadband amplifiers. fT = 8 GHz, NFmin = 1 dB at 900 MHz. Pb-free (RoHS compliant) and halogen-free (WEEE compliant) product. Potential Applications. Wireless Communications. LNA in RF... [See More]

• Packing Method: Tape Reel; TAPE & REEL

• Package Type: TSFP-3-1

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB [See More]

• Packing Method: Tape Reel; Tape & Reel
• Polarity: PNP

• Transistor Type: Bipolar RF; MOSFET RF
• Package Type: SOT23

Manufacturer: Infineon Technologies. Win Source Part Number: 1257878-SPD18P06P. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Family Name: SPD18P06P. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO252-3. Drive Voltage (Max Rds... [See More]

• Packing Method: Tape Reel; Reel
• Package Type: SOT3; TO-252 (DPAK)

• Polarity: P-Channel; P-Channel
• T_J: -55 to 175

NPN Silicon RF Transistor. Summary of Features. For low noise, high-gain amplifiers up to 2 GHz. For linear broadband amplifiers. fT = 8 GHz, NFmin = 1 dB at 900 MHz. Pb-free (RoHS compliant) package. Potential Applications. Wireless Communications. LNA in RF Front-end. For various applications like... [See More]

• Packing Method: Tape Reel; TAPE & REEL

• Package Type: TSLP-3-1

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB [See More]

• Packing Method: Tape Reel; Tape & Reel
• Polarity: PNP

• Transistor Type: Bipolar RF; MOSFET RF
• Package Type: SOT23

Manufacturer: STMicroelectronics. Win Source Part Number: 1260594-STB13007DT4. Packaging: Reel. Mounting Style: SMD. Transistor Type: NPN. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK. Temperature Range - Operating: 150 °C. Manufacturer Homepage: www.st.com. [See More]

• Packing Method: Tape Reel; Reel
• Package Type: TO-263; SOT3

• Polarity: NPN
• T_J: 150

NPN Silicon RF Transistor. Summary of Features. For low noise, high-gain amplifiers up to 2 GHz. For linear broadband amplifiers. fT = 8 GHz, NFmin = 1 dB at 900 MHz. Pb-free (RoHS compliant) package. Potential Applications. Wireless Communications. LNA in RF Front-end. For various applications like... [See More]

• Packing Method: Tape Reel; TAPE & REEL

• Package Type: SOT323; SOT323

Power Bipolar Transistor, 1A I(C), 1-Element, NPN [See More]

• Packing Method: Tape Reel; Tape & Reel
• Polarity: NPN

• Transistor Type: Bipolar RF
• Package Type: SOT89

Manufacturer: ON Semiconductor. Win Source Part Number: 1124251-2N7002VA. Packaging: Reel. Mounting Style: SMD. FET Feature: Logic Level Gate. Transistor Polarity: 2 N-Channel (Dual). Categories: Discrete Semiconductor Products. Supplier Device Package: SOT-563F. Temperature Range - Operating: -55... [See More]

• Packing Method: Tape Reel; Reel
• Package Type: SOT3

• Polarity: N-Channel; 2 N-Channel (Dual)
• T_J: -55 to 150

High Performance NPN Bipolar RF Transistor. Summary of Features. High performance low noise amplifier. Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz. For a wide range of non automotive applications such as WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB, UMTS/LTE and ISM bands. Easy to use... [See More]

• Packing Method: Tape Reel; TAPE & REEL

• Package Type: SOT343

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon [See More]

• Packing Method: Tape Reel; Tape & Reel
• Polarity: PNP

• Transistor Type: Bipolar RF; MOSFET RF
• Package Type: SOT-346 (S-Mini)

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1144846-AO6804. Packaging: Reel. Mounting Style: SMD. FET Feature: Logic Level Gate. Transistor Polarity: 2 N-Channel (Dual) Common Drain. Categories: Discrete Semiconductor Products. Supplier Device Package: 6-TSOP. Status:... [See More]

• Packing Method: Tape Reel; Reel
• Package Type: SOT3

• Polarity: N-Channel; 2 N-Channel (Dual) Common Drain
• T_J: -55 to 150

NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Summary of Features. For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. fT = 8 GHz, F = 0.9 dB at 900 MHz. Two (galvanic) internal isolated... [See More]

• Packing Method: Tape Reel; TAPE & REEL

• Package Type: SOT363

Small Signal Bipolar Transistor, 0.15A, 50V, PNP [See More]

• Packing Method: Tape Reel; Tape & Reel
• Polarity: PNP

• Transistor Type: Bipolar RF; MOSFET RF
• Package Type: SC-59-3

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1144849-AO8801. Packaging: Tape and Reel. Mounting Style: SMD. FET Feature: Standard. Transistor Polarity: 2 P-Channel (Dual). Categories: Discrete Semiconductor Products. Supplier Device Package: 8-TSSOP. Status: Obsolete. [See More]

• Packing Method: Tape Reel; Tape and Reel
• Package Type: SOT3

• Polarity: P-Channel; 2 P-Channel (Dual)
• T_J: -55 to 150

Small Signal Bipolar Transistor, 1A I(C), 1-Element, PNP [See More]

• Packing Method: Tape Reel; Tape & Reel
• Polarity: PNP

• Transistor Type: Bipolar RF; MOSFET RF
• Package Type: TO-220; TO-220FM

Manufacturer: Diodes Incorporated. Win Source Part Number: 803017-DMN5L06DMKQ-7. Packaging: Reel. Mounting Style: SMD. FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain to Source Voltage (Vdss): 50V. Power - Max: 400mW. Supplier Device Package: SOT-26. Temperature Range - Operating: -65... [See More]

• Packing Method: Tape Reel; Reel
• Package Type: SOT3; SOT23; SOT26

• Polarity: N-Channel
• T_J: -65 to 150

Bipolar PNP Transistor, 1.5A 15V [See More]

• Packing Method: Tape Reel; Tape & Reel
• Polarity: PNP

• Transistor Type: Bipolar RF

Manufacturer: ON Semiconductor. Win Source Part Number: 060143-NDH8304P. Packaging: Tape and Reel. Mounting Style: SMD. FET Feature: Logic Level Gate. Transistor Polarity: 2 P-Channel (Dual). Categories: Discrete Semiconductor Products. Supplier Device Package: SuperSOT-8. Status: Obsolete. [See More]

• Packing Method: Tape Reel; Tape and Reel
• Package Type: SOT3

• Polarity: P-Channel; 2 P-Channel (Dual)
• T_J: -55 to 150

PNP Bipolar Transistor [See More]

• Packing Method: Tape Reel; Tape & Reel
• Polarity: PNP

• Transistor Type: Bipolar RF
• Package Type: SOT-723 3 LEAD

Manufacturer: Diodes Incorporated. Win Source Part Number: 1124253-2N7002W-7. Packaging: Cut Tape (CT). Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: SOT-323. Drive Voltage (Max Rds On, Min Rds On): 5V,... [See More]

• Packing Method: Tape Reel; Cut Tape (CT)
• Package Type: SOT3; SOT323

• Polarity: N-Channel; N-Channel
• T_J: -55 to 150

Small Signal Bipolar Transistor, 8A, PNP [See More]

• Packing Method: Tape Reel; Tape & Reel
• Polarity: PNP

• Transistor Type: Bipolar RF; MOSFET RF
• Package Type: DPAK-3

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1144747-AO3434. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: SOT-23-3L. Drive Voltage (Max Rds On,... [See More]

• Packing Method: Tape Reel; Tape and Reel
• Package Type: SOT3; SOT23

• Polarity: N-Channel; N-Channel
• T_J: -55 to 150

Power Bipolar Transistor, 5A, 60V, PNP [See More]

• Packing Method: Tape Reel; Tape & Reel
• Polarity: PNP

• Transistor Type: Bipolar RF
• Package Type: TO-220; TO-220-3

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1144756-AO4406. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: 8-SOIC. Drive Voltage (Max Rds On, Min Rds On):... [See More]

• Packing Method: Tape Reel; Reel
• Package Type: SOT3

• Polarity: N-Channel; N-Channel
• T_J: -55 to 150

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN [See More]

• Packing Method: Tape Reel; Tape & Reel
• Polarity: NPN

• Transistor Type: Bipolar RF; MOSFET RF
• Package Type: SOT-523-3

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1144757-AO4407. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: 8-SOIC. Drive Voltage (Max Rds On, Min... [See More]

• Packing Method: Tape Reel; Tape and Reel
• Package Type: SOT3

• Polarity: P-Channel; P-Channel
• T_J: -55 to 150

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN [See More]

• Packing Method: Tape Reel; Tape & Reel
• Polarity: NPN

• Transistor Type: Bipolar RF; MOSFET RF
• Package Type: MPAK4

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 801572-AO4423. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET (Metal Oxide). FET Type: P-Channel. Drain to Source Voltage (Vdss): 30V. Part Status: Obsolete (End Of Life). Supplier Device Package: 8-SOIC. Drive... [See More]

• Packing Method: Tape Reel; Reel
• Package Type: SOT3

• Polarity: P-Channel
• T_J: -55 to 150

Bipolar Transistor, 9V, 0.3A, NPN [See More]

• Packing Method: Tape Reel; Tape & Reel
• Polarity: NPN

• Transistor Type: Bipolar RF
• Package Type: CP4

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1144916-AOD413. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-252, (D-Pak). Drive Voltage (Max Rds On, Min... [See More]

• Packing Method: Tape Reel; Reel
• Package Type: SOT3; TO-252 (DPAK)

• Polarity: P-Channel; P-Channel
• T_J: -55 to 175

NPN Triple Diffused Transistor [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: CAN3/4

• Polarity: NPN

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1144989-AON7400. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: 8-DFN (3x3). Drive Voltage (Max Rds On, Min Rds... [See More]

• Packing Method: Tape Reel; Reel
• Package Type: SOT3

• Polarity: N-Channel; N-Channel
• T_J: -55 to 150

Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single [See More]

• Packing Method: Tape Reel; Tape & Reel
• Polarity: NPN

• Transistor Type: Bipolar RF
• Package Type: DPAK / TP-FA

Manufacturer: ON Semiconductor. Win Source Part Number: 814188-BSS123LT1. Packaging: Cut Tape (CT). Mounting Style: SMD. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 100V. Part Status: Obsolete (End Of Life). Supplier Device Package: SOT-23-3 (TO-236). [See More]

• Packing Method: Tape Reel; Cut Tape (CT)
• Package Type: SOT3; SOT23

• Polarity: N-Channel

NPN Darlington Transistor [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: TO-92; TO-92MOD

• Polarity: NPN

Manufacturer: Diodes Incorporated. Win Source Part Number: 803560-DMN53D0LQ-7. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 50V. Supplier Device Package: SOT-23. Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V. [See More]

• Packing Method: Tape Reel; Reel
• Package Type: SOT3; SOT23

• Polarity: N-Channel
• T_J: -55 to 150

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET [See More]

• Packing Method: Tape Reel; Tape & Reel
• Polarity: N-Channel

• Transistor Type: MOSFET RF
• Package Type: SOT-343

Manufacturer: ON Semiconductor. Win Source Part Number: 801881-FCD850N80Z. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 800V. Supplier Device Package: DPAK. Drive Voltage (Max Rds On, Min Rds On): 10V. Temperature Range... [See More]

• Packing Method: Tape Reel; Reel
• Package Type: SOT3; TO-252 (DPAK)

• Polarity: N-Channel
• T_J: -55 to 150

Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: CFM2F

Manufacturer: Infineon Technologies. Win Source Part Number: 1186014-IPB04N03LA. Packaging: Cut Tape (CT). Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO263-3-2. Drive Voltage (Max Rds On, Min Rds... [See More]

• Packing Method: Tape Reel; Cut Tape (CT)
• Package Type: TO-263; SOT3

• Polarity: N-Channel; N-Channel
• T_J: -55 to 175

Small signal bipolar junction transistor [See More]

• Packing Method: Tape Reel
• Polarity: NPN

• Transistor Type: Bipolar RF
• Package Type: SOT23

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: 150

Microcurrent device offering good RF performance at 1mA-5mA. The AT-305XX is housed in two packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1.1dB, Gain=16dB at 3V, 1mA; P1dB= 7dBm at 3V, 5mA (all at 900 MHz) [See More]

• Packing Method: Tape Reel; Bulk
• Polarity: NPN; NPN

• Transistor Type: Bipolar RF
• Transistor Technology / Material: Silicon

DIODE CUR REG 100V 242UA 500MW [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Output Power: 0.5000

• Package Type: Through Hole

AIRFAST RF POWER LDMOS TRANSISTO [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Output Power: 280

• Power Gain: 18.7

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: 150

Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at 3V, 20mA (all at 900 MHz) [See More]

• Packing Method: Tape Reel; Bulk
• Polarity: NPN; NPN

• Transistor Type: Bipolar RF
• Transistor Technology / Material: Silicon

DIODE CUR REG 100V 242UA 500MW [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Output Power: 0.5000

• Package Type: DO-213AB (MELF, LL41)

AVAGO TECHNOLOGIES AT-41511-TR1G Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 225 mW, 50 mA, 150 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Polarity: NPN; NPN

• Transistor Type: Bipolar RF
• Transistor Technology / Material: SILICON

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)

Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at 3V, 20mA (all at 900 MHz) [See More]

• Packing Method: Tape Reel; Bulk
• Polarity: NPN; NPN

• Transistor Type: Bipolar RF
• Transistor Technology / Material: Silicon

DIODE CUR REG 100V 473UA 500MW [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Output Power: 0.5000

• Package Type: DO-7

AVAGO TECHNOLOGIES ATF-50189-BLK RF FET Transistor, High Linearity, 7 V, 1 A, 2.25 W, 400 MHz, 3.9 GHz, SOT-89 [See More]

• Packing Method: Tape Reel; Cut Tape (CT)
• Power Gain: 15.5

• T_J: -65 to 150
• Output Power: 0.7943

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased [See More]

• Packing Method: Tape Reel; Surface Mount

Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at 3V, 20mA (all at 900 MHz) [See More]

• Packing Method: Tape Reel; Bulk
• Polarity: NPN; NPN

• Transistor Type: Bipolar RF
• Transistor Technology / Material: Silicon

DIODE CUR REG 100V 517UA 500MW [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Output Power: 0.5000

• Package Type: DO-7

Bipolar Transistors - BJT SS Mid-Perf Transist X1-DFN1006-3,10K [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Polarity: NPN; NPN

• Transistor Type: Bipolar RF
• Transistor Technology / Material: SILICON

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

DIODE CUR REG 100V 330UA [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)

DUAL N CH RF MOSFET, 12V, 30MA, 4-SOT-143R - More Details [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Transistor Technology / Material: SILICON

• Transistor Type: MOSFET RF
• Number of units in IC: 1

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: 150

DIODE CUR REG 90V 23MA 1W [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Output Power: 1

• Package Type: Surface Mount

FET RF 100V 1.09GHZ PLD-1.5 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Transistor Technology / Material: SILICON

• Polarity: N-Channel; N-CHANNEL
• Number of units in IC: 1

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: 150

DIODE CUR REG 90V 23MA 1W SMB [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Output Power: 1

• Package Type: Surface Mount

FET RF 2CH 110V 130MHZ NI-1230 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Power Gain: 26

• Polarity: N-Channel; N-CHANNEL
• Output Power: 1000

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: 150

CURRENT REGULATOR DIODES 100V .3 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
• Output Power: 0.5000

• Package Type: Surface Mount

FET RF 40V 500MHZ PWRSO-10 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Number of units in IC: 1

• Polarity: N-Channel; N-CHANNEL
• T_J: -65 to 165

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: 150

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Through Hole

• T_J: -55 to 125

FET RF 4V 2GHZ SOT-343 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Power Gain: 17.5

• T_J: -65 to 150
• Output Power: 0.0126

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: 150

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: 150

FET RF 65V 1.81GHZ NI-880 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Output Power: 90

• Power Gain: 13.5

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: 150

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: 150

FET RF 65V 2.17GHZ NI-360 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Output Power: 10

• Power Gain: 13.5

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: 150

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: 150

FET RF 68V 2.16GHZ TO270-4 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Output Power: 23

• Power Gain: 14.5

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: 150

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

FET RF 68V 960MHZ TO-272-4 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Output Power: 100

• Power Gain: 17.5

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Through Hole

• T_J: 150

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: 150

FREESCALE SEMICONDUCTOR MMG3014NT1 RF TRANSISTOR, SOT-89 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Noise Figure: 5.7

• Power Gain: 19.5

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: 150

CONN D-SUB RCPT 9P SMD R/A SLDR [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)

• Package Type: UL94 V-0

IC FET RF LDMOS 220W H-37260-2 [See More]

• Packing Method: Tape Reel; Tray
• Output Power: 220

• Power Gain: 18

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: 150

TRANS NPN 40V 0.2A SOT23-3 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)

ON Semi CPH6003A-TL-E NPN RF Bipolar Transistor; 0.15 A; 12 V; 6-Pin CPH [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Polarity: NPN; NPN

• Transistor Type: Bipolar RF
• Number of units in IC: 1

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Through Hole

• T_J: 150

SMALL-SIGNAL BJT [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)

RF Bipolar Transistors NPN High Frequency [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Polarity: NPN

• Transistor Type: Bipolar RF
• T_J: 150

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -65 to 150

SMALL-SIGNAL BJT [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)

RF Bipolar Transistors NPN Low Distort Amp [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Polarity: NPN

• Transistor Type: Bipolar RF
• T_J: 150

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

TRANS NPN 50V 0.8A 4SMD [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)

RF Bipolar Transistors NPN Silicon Amp [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Polarity: NPN

• Transistor Type: Bipolar RF
• T_J: 150

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: 150

TRANS NPN 15V SMD [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)

RF Bipolar Transistors VCEO=-150V IC=-600mA [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Polarity: PNP; PNP

• Transistor Type: Bipolar RF
• Transistor Technology / Material: SILICON

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased [See More]

• Packing Method: Tape Reel; Surface Mount

TRANS NPN 60V 0.05A UA [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)

• Package Type: UA

RF FET 50V 11DB SOT1228A [See More]

• Packing Method: Tape Reel; Tray

TRANS PNP 12V 1A 3CPH [See More]

• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT)

TRANS PNP 60V 0.6A UB [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)

RF FET HEMT 150V 11.5DB SOT467C [See More]

• Packing Method: Tape Reel; Tray
• Transistor Technology / Material: GALLIUM NITRIDE

• Polarity: N-Channel; N-CHANNEL
• Number of units in IC: 1

TRANS PNP 12V 1A 3MCPH [See More]

• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

TRANSISTOR DUAL SMALL-SIGNAL BJT [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)

• Package Type: U

RF FET HEMT 150V 14DB SOT1228B [See More]

• Packing Method: Tape Reel; Tray
• Transistor Technology / Material: GALLIUM NITRIDE

• Polarity: N-Channel; N-CHANNEL
• Number of units in IC: 2

TRANS NPN 15V 0.7A 3CP [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)

TRANSISTOR DUAL SMALL-SIGNAL BJT [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)

• Package Type: 6-SMD

RF FET LDMOS 100V 15.5DB SOT539A [See More]

• Packing Method: Tape Reel; Tray
• Transistor Technology / Material: SILICON

• Polarity: N-Channel; N-CHANNEL
• Number of units in IC: 2

TRANS NPN 15V 700MA 3MCP [See More]

• Packing Method: Tape Reel; Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT),Digi-ReelR,Digi-ReelR

TRANS NPN 25V 0.5A TO92-3 [See More]

• Packing Method: Tape Reel; Tape & Box (TB)

RF FET LDMOS 100V 17DB SOT1135A [See More]

• Packing Method: Tape Reel; Tray
• Transistor Technology / Material: SILICON

• Polarity: N-Channel; N-CHANNEL
• Number of units in IC: 1