Bipolar RF Transistors RF Transistors
from Infineon Technologies AG
HiRel Microwave Transistor. Summary of Features. Hermetically sealed microwave package. fT= 8 GHz. F = 2.2 dB at 2 GHz. Type Variant No. 03. ESA Space Qualified ESSCC Detail Spec. No.: 5611/006/03 B. Potential Applications. For low noise, high-gain broadband amplifiers at collector currents from 0,5... [See More]
- Transistor Type: Bipolar RF
- Packing Method: SINGLE BOX
- Package Type: Micro-X
from Win Source Electronics
Win Source Part Number: 1005637-SG2803L-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 50. Mounting: SMD (SMT). Voltage - Collector Emitter Breakdown (Max): 50V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 8 NPN... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: NPN
- TJ: -55 to 125
from ODG (Origin Data Global)
RF TRANS NPN 65V 1GHZ 55KT [See More]
- Transistor Type: Bipolar RF
- Package Type: 55KT
- Polarity: NPN; NPN
- TJ: 200
from Rochester Electronics
Bipolar Transistor, 15V, 1A, Low VCE(sat) NPN Single MCPH3 [See More]
- Transistor Type: Bipolar RF
- Package Type: SC 70FL / MCPH3
- Polarity: NPN
- Packing Method: Tape Reel; Tape & Reel
from Infineon Technologies AG
HiRel Microwave Transistor. Summary of Features. Hermetically sealed microwave package. fT= 8 GHz. F = 2.2 dB at 2 GHz. Potential Applications. For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Quality level for Engineering Models. Applications. Space... [See More]
- Transistor Type: Bipolar RF
- Packing Method: SINGLE BOX
- Package Type: Micro-X
from Win Source Electronics
Win Source Part Number: 1006864-SBC847BPDW1T3G. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 10,000. Mounting: SMD (SMT). Power - Max: 380mW. Voltage - Collector Emitter Breakdown (Max):... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: NPN; PNP
- TJ: -55 to 150
from ODG (Origin Data Global)
RF TRANS NPN 65V 55SM [See More]
- Transistor Type: Bipolar RF
- Package Type: 55SM
- Polarity: NPN; NPN
- TJ: 230
from Rochester Electronics
RF Small Signal Bipolar Transistor [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SC-60
from Infineon Technologies AG
HiRel Microwave Transistor. Summary of Features. For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers. Specified 1/f Noise. Hermetically sealed microwave package. fT= 8GHz. F = 1.75 dB at 2 GHz. Applications. Space applications [See More]
- Transistor Type: Bipolar RF
- Packing Method: WAFER UNSAWN
from Win Source Electronics
Win Source Part Number: 1008883-SG2813J-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 21. Voltage - Collector Emitter Breakdown (Max): 50V. Current - Collector (Ic) (Max): 600mA. Transistor Type: 8 NPN Darlington. Vce... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: NPN
- TJ: -55 to 125
from ODG (Origin Data Global)
RF TRANS NPN 10V 1.5GHZ 3CP [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
- Polarity: NPN; NPN
- TJ: 150
from Rochester Electronics
2N2814 - NPN Bipolar Transistor [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-61
- Polarity: NPN
from Win Source Electronics
Win Source Part Number: 1010559-PBSS4160PANP,115. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: *. Package: Bulk. Standard Package: 1. Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited). REACH Status: REACH Unaffected. Mfr: NXP... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
from ODG (Origin Data Global)
RF TRANS NPN 42V 2.3GHZ 55BT [See More]
- Transistor Type: Bipolar RF
- Package Type: 55BT
- Polarity: NPN; NPN
- TJ: 200
from Rochester Electronics
RF Small Signal Bipolar Transistor, 0.05A, Very High Frequency Band, NPN, TO-92 [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: TO-92; TO-92
- Polarity: NPN
from Win Source Electronics
Win Source Part Number: 1013476-SG2024J-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 1. Voltage - Collector Emitter Breakdown (Max): 95V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 7 NPN Darlington. Vce... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: NPN
- TJ: -55 to 125
from ODG (Origin Data Global)
RF TRANS NPN 15V 1.9GHZ TO72 [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-206AF, TO-72-4 Metal Can
- Polarity: NPN; NPN
- TJ: -65 to 200
from Rochester Electronics
4.0 A, 60 V PNP Bipolar Power Transistor [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-225
- Polarity: PNP
- Packing Method: Bulk; Bulk
from Win Source Electronics
Win Source Part Number: 1019168-SG2003L-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 50. Mounting: SMD (SMT). Voltage - Collector Emitter Breakdown (Max): 50V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 7 NPN... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: NPN
- TJ: -55 to 125
from ODG (Origin Data Global)
SMALL-SIGNAL BJT [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-205AA, TO-5-3 Metal Can
- Polarity: PNP; PNP
- TJ: -65 to 200
from Rochester Electronics
Small Signal Bipolar Transistor, NPN [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SIP3
- Polarity: NPN
from Win Source Electronics
Win Source Part Number: 1021519-SG2823L-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 50. Mounting: SMD (SMT). Voltage - Collector Emitter Breakdown (Max): 95V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 8 NPN... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: NPN
- TJ: -55 to 125
from ODG (Origin Data Global)
SMALL-SIGNAL BJT [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-206AA, TO-18-3 Metal Can
- Polarity: PNP; PNP
- TJ: -65 to 200
from Rochester Electronics
25 A, 80 V NPN Bipolar Power Transistor [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-3; TO-204 (TO-3)
- Polarity: NPN
- Packing Method: Tray
from Win Source Electronics
Win Source Part Number: 1024225-ULQ2001A. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tube. Standard Package: 2,000. Voltage - Collector Emitter Breakdown (Max): 50V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 7 NPN Darlington. Vce... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: NPN
- TJ: 150
from ODG (Origin Data Global)
SILICON TRANSISTOR NPN TO-39 [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-39; TO-205AD, TO-39-3 Metal Can
- Polarity: NPN; NPN
- TJ: -65 to 200
from Rochester Electronics
Power Bipolar Transistor, 25A, 120V, PNP, TO-204AA, Metal, 2 Pin [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-204AA
- Polarity: PNP
from Win Source Electronics
Win Source Part Number: 1028180-KSC5200OTU. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Bulk. Standard Package: 1. Power - Max: 130W. Voltage - Collector Emitter Breakdown (Max): 230V. Current - Collector (Ic) (Max): 13A. Transistor Type: NPN. Vce... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: NPN
- TJ: 150
from ODG (Origin Data Global)
RF TRANS NPN 30V 400MHZ TO39 [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-39; TO-205AD, TO-39-3 Metal Can
- Polarity: NPN; NPN
- TJ: -65 to 200
from Rochester Electronics
Power Bipolar Transistor, 15A, 60V, PNP [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-220; TO-220AB
- Polarity: PNP
- Packing Method: Tube; Tube
from Win Source Electronics
Win Source Part Number: 1033310-SG2023L-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 50. Mounting: SMD (SMT). Voltage - Collector Emitter Breakdown (Max): 95V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 7 NPN... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: NPN
- TJ: -55 to 125
from ODG (Origin Data Global)
RF TRANS PNP 30V 30MA TO72 [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-72-3 Metal Can
- Polarity: PNP; PNP
- TJ: -65 to 200
from Rochester Electronics
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SOT323
- Polarity: PNP
- Packing Method: Tape Reel; Tape & Reel
from Win Source Electronics
Win Source Part Number: 1048409-BC847BPN,125. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 300mW. Voltage - Collector Emitter Breakdown (Max):... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: NPN; PNP
- TJ: 150
from ODG (Origin Data Global)
PNP SIL RF TO39 [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-39; TO-205AD, TO-39-3 Metal Can
- Polarity: PNP; PNP
- TJ: -65 to 200
from Rochester Electronics
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SC-75
- Polarity: PNP
- Packing Method: Tape Reel; Tape & Reel
from Win Source Electronics
Win Source Part Number: 1048413-BC847QAPNZ. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 5,000. Mounting: SMD (SMT). Power - Max: 350mW. Voltage - Collector Emitter Breakdown (Max): 45V. [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: NPN; PNP
- TJ: 150
from ODG (Origin Data Global)
RF TRANS NPN 15V 900MHZ TO92 [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92; TO-226-3, TO-92-3 (TO-226AA)
- Polarity: NPN; NPN
- TJ: -65 to 150
from Rochester Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SOT883
- Polarity: PNP
- Packing Method: Tape Reel; Tape & Reel
from Win Source Electronics
Win Source Part Number: 1048426-BC856SF. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 10,000. Mounting: SMD (SMT). Power - Max: 400mW. Voltage - Collector Emitter Breakdown (Max):... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: PNP
- TJ: 150
from ODG (Origin Data Global)
RF TRANS NPN 15V TO92-3 [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Polarity: NPN; NPN
- TJ: -55 to 150
from Rochester Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SOT23
- Polarity: PNP
- Packing Method: Tape Reel; Tape & Reel
from Win Source Electronics
Win Source Part Number: 1079528-MMDT2227A_R1_00001. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 225mW, 200mW. Voltage - Collector Emitter Breakdown (Max): 40V, 60V. Current -... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: NPN; PNP; Complementary
- TJ: -55 to 150
from ODG (Origin Data Global)
RF TRANS PNP 20V 300MHZ SSMINI3 [See More]
- Transistor Type: Bipolar RF
- Package Type: SC-89, SOT-490
- Polarity: PNP; PNP
- TJ: 125
from Rochester Electronics
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SOT23
- Polarity: PNP
- Packing Method: Tape Reel; Tape & Reel
from Win Source Electronics
Win Source Part Number: 1079529-MMDT2907AQ-7-F. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel (TR). Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max): 60V. Current - Collector... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: PNP
- TJ: -55 to 150
from ODG (Origin Data Global)
PNP TRANSISTOR [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
- Polarity: PNP; PNP
- TJ: 150
from Rochester Electronics
Small Signal Bipolar Transistor, 0.15A, 50V, NPN, SC-70 [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SOT323; SC-70 (SOT-323)
- Polarity: NPN
- Packing Method: Tape Reel; Tape & Reel
from Win Source Electronics
Win Source Part Number: 1085643-PMBT3906YS,115. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 350mW. Voltage - Collector Emitter Breakdown... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: PNP
- TJ: 150
from ODG (Origin Data Global)
RF TRANS PNP 12V 8.5GHZ SOT23 [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
- Polarity: PNP; PNP
- TJ: 150
from Rochester Electronics
Power Bipolar Transistor, 1A I(C), 1-Element, NPN [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT89
- Polarity: NPN
- Packing Method: Tape Reel; Tape & Reel
from Win Source Electronics
Win Source Part Number: 1086362-PUMT1,115. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 300mW. Voltage - Collector Emitter Breakdown (Max): 40V. Current - Collector (Ic) (Max):... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: PNP
- TJ: 150
from ODG (Origin Data Global)
RF SMALL SIGNAL BIPOLAR TRANSIST [See More]
- Transistor Type: Bipolar RF
from Rochester Electronics
Small Signal Bipolar Transistor, 0.15A, 50V, PNP [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SC-59-3
- Polarity: PNP
- Packing Method: Tape Reel; Tape & Reel
from Win Source Electronics
Win Source Part Number: 1102390-UP04534G0L. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 8,000. Mounting: SMD (SMT). Power - Max: 125mW. Voltage - Collector Emitter Breakdown (Max): 20V. Current - Collector (Ic)... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: NPN
- TJ: 125
from ODG (Origin Data Global)
RF 0.1A, ULTRA HIGH FREQ BAND [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT89; TO-243AA
- Polarity: NPN; NPN
- TJ: 150
from Rochester Electronics
Small Signal Bipolar Transistor, 0.5A, 140V, PNP [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: TO-220; TO-220FM
- Polarity: PNP
from Win Source Electronics
Win Source Part Number: 1106496-BC857BS,135. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 10,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max):... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: PNP
- TJ: 150
from ODG (Origin Data Global)
2SC3583 - MD [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
- Polarity: NPN; NPN
- TJ: 150
from Rochester Electronics
Power Bipolar Transistor, PNP [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-220; TO-220-3FP
- Polarity: PNP
from Win Source Electronics
Win Source Part Number: 1108930-BCM847BS,115. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 300mW. Voltage - Collector Emitter Breakdown (Max): 45V. Current - Collector (Ic)... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: NPN
- TJ: 150
from ODG (Origin Data Global)
RF TRANS NPN 20V 0.05A SMT3 [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
- Polarity: NPN; NPN
- TJ: 150
from Rochester Electronics
Small Signal Bipolar Transistor, 1.5, PNP [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: TO-251-3, IPak, TO-251AA
- Polarity: PNP
from Win Source Electronics
Win Source Part Number: 1109505-EMX26T2R. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 8,000. Mounting: SMD (SMT). Power - Max: 150mW. Voltage - Collector Emitter Breakdown (Max): 50V. Current - Collector (Ic) (Max):... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: NPN
- TJ: 150
from ODG (Origin Data Global)
RF TRANS NPN 20V 0.05A UMT3 [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT323; SC-70, SOT-323
- Polarity: NPN; NPN
- TJ: 150
from Rochester Electronics
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin [See More]
- Transistor Type: Bipolar RF
- Polarity: PNP
from Win Source Electronics
Win Source Part Number: 1111978-BCM847BS-7. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max): 45V. [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: NPN
- TJ: -65 to 150
from ODG (Origin Data Global)
RF TRANS NPN 30V 550MHZ USM [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT323; SC-70, SOT-323
- Polarity: NPN; NPN
- TJ: 125
from Rochester Electronics
PNP Bipolar Transistor [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT-723 3 LEAD
- Polarity: PNP
- Packing Method: Tape Reel; Tape & Reel
from Win Source Electronics
Win Source Part Number: 1112673-MMDT4403-TP. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max): 40V. Current - Collector (Ic)... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: PNP
- TJ: -55 to 150
from ODG (Origin Data Global)
RF TRANS NPN 12V 4.5GHZ SOT323 [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT323; SC-70, SOT-323
- Polarity: NPN; NPN
- TJ: 150
from Rochester Electronics
Small Signal Bipolar Transistor, 3A, 25V, PNP [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SP-8
- Polarity: PNP
from Win Source Electronics
Win Source Part Number: 1115115-EMX1FHAT2R. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 8,000. Mounting: SMD (SMT). Power - Max: 150mW. Voltage - Collector Emitter Breakdown (Max): 50V. [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: NPN
- TJ: 150
from ODG (Origin Data Global)
RF 0.035A, ULTRA HIGH FREQ BAND [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT323; SC-70, SOT-323
- Polarity: NPN; NPN
- TJ: 150
from Rochester Electronics
Small Signal Bipolar Transistor, 3A, PNP [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: IPAK-3
- Polarity: PNP
- Packing Method: Bulk; Bulk
from Win Source Electronics
Win Source Part Number: 1115671-BC847BPN_R1_00001. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max): 45V. Current - Collector... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT3
- Polarity: NPN; PNP; Complementary
- TJ: -55 to 150
from ODG (Origin Data Global)
RF TRANS NPN 15V SOT89 [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT89; TO-243AA
- Polarity: NPN; NPN
- TJ: 150
from Rochester Electronics
Bipolar PNP Transistor, 5A 50V [See More]
- Transistor Type: Bipolar RF
- Package Type: DPAK
- Polarity: PNP
from MACOM
At MACOM we offer a broad range of bipolar technology RF power pallet amplifier products designed for applications from1.0 GHz to 3.5 GHz. Our high power pallets are ideal for civil avionics, radar, and industrial, scientific, and medical applications. Our all gold metallization fabrication... [See More]
- Transistor Type: Bipolar RF
- Transistor Grade / Operating Range: Commercial (optional feature); Industrial (optional feature)
- Transistor Technology / Material: Silicon
- Package Type: Pallet
from Northrop Grumman Corporation
WPTB32A0912Ax 960-1215 MHz Bipolar RF Transistor. The WPTB32A0912Ax application-specific transistor uses the 3217 L-Band die which was developed for pulsed radar systems. Optimal internal matching delivers high performance for applications such as the MIDS and JTIDS communication systems. Low... [See More]
- Transistor Type: Bipolar RF
- Transistor Grade / Operating Range: Military
- Transistor Technology / Material: SiC
- TJ: 200
from Broadcom Inc.
Microcurrent device offering good RF performance at 1mA-5mA. The AT-305XX is housed in two packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1.1dB, Gain=16dB at 3V, 1mA; P1dB= 7dBm at 3V, 5mA (all at 900 MHz) [See More]
- Transistor Type: Bipolar RF
- Transistor Technology / Material: Silicon
- Polarity: NPN; NPN
- Transistor Grade / Operating Range: Industrial
from Integra Technologies, Inc.
The high power pulsed avionics transistor part number IB0607S10 is designed for UHF-Band avionics systems operating at 653 to 687 . While operating in class C mode under 20us pulse conditions at VCC= 50V, this common base device supplies a minimum of 12 watts of peak pulse power. The new generation... [See More]
- Transistor Type: Bipolar RF
- Package Type: P32A5
- Transistor Technology / Material: GaN
- Power Gain: 10.2
from Utmel Electronic Limited
AVAGO TECHNOLOGIES AT-41511-TR1G Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 225 mW, 50 mA, 150 [See More]
- Transistor Type: Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: NPN; NPN
- Packing Method: Tape Reel; Tape & Reel (TR)
from PANJIT SemiConductor
Small signal bipolar junction transistor [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT23
- Polarity: NPN
- Packing Method: Tape Reel
from MACOM
At MACOM we offer a broad range of bipolar technology RF power transistor products as discrete devices, modules, and pallets from DC to 3.5 GHz. Our high power bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our... [See More]
- Transistor Type: Bipolar RF
- Transistor Technology / Material: Silicon
- Polarity: NPN (optional feature)
- Transistor Grade / Operating Range: Commercial (optional feature); Industrial (optional feature)
from Broadcom Inc.
Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at 3V, 20mA (all at 900 MHz) [See More]
- Transistor Type: Bipolar RF
- Transistor Technology / Material: Silicon
- Polarity: NPN; NPN
- Package Type: SOT323
from Integra Technologies, Inc.
The high power pulsed avionics transistor part number IB1012S150 is designed for L-Band avionics systems operating at 1025 to 1150 . While operating in class C mode under DME pulse conditions at VCC=50V, this common base device supplies a minimum of 150 watts of peak pulse power. It utilizes a low... [See More]
- Transistor Type: Bipolar RF
- Package Type: P44C14
- Transistor Technology / Material: GaN
- Power Gain: 10.2
from Utmel Electronic Limited
Bipolar Transistors - BJT SS Mid-Perf Transist X1-DFN1006-3,10K [See More]
- Transistor Type: Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: NPN; NPN
- Packing Method: Tape Reel; Tape & Reel (TR)
from Broadcom Inc.
Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at 3V, 20mA (all at 900 MHz) [See More]
- Transistor Type: Bipolar RF
- Transistor Technology / Material: Silicon
- Polarity: NPN; NPN
- Package Type: SOT23
from Integra Technologies, Inc.
The high power pulsed avionics transistor part number IB1012S50 is designed for L-Band avionics systems operating at 1025 to 1150 . While operating in class C mode under DME pulse conditions at VCC=50V, this common base device supplies a minimum of 50 watts of peak pulse power. It utilizes a low... [See More]
- Transistor Type: Bipolar RF
- Package Type: P32A5
- Transistor Technology / Material: GaN
- Power Gain: 10.6
from Utmel Electronic Limited
ON Semi CPH6003A-TL-E NPN RF Bipolar Transistor; 0.15 A; 12 V; 6-Pin CPH [See More]
- Transistor Type: Bipolar RF
- Packing Method: Tape Reel; Tape & Reel (TR)
- Polarity: NPN; NPN
- Number of units in IC: 1
from Broadcom Inc.
Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at 3V, 20mA (all at 900 MHz) [See More]
- Transistor Type: Bipolar RF
- Transistor Technology / Material: Silicon
- Polarity: NPN; NPN
- Package Type: SOT-363 (SC70)
from Integra Technologies, Inc.
The high power pulsed transistor device part number IB1012S500 is designed for systems operating over the instantaneous bandwidth of 1025-1150 . While operating in class C mode under DME pulsing conditions and Vcc=50V, this common base device supplies a minimum of 500 watts of peak pulse power. It... [See More]
- Transistor Type: Bipolar RF
- Package Type: P54A5
- Transistor Technology / Material: GaN
- Power Gain: 10.3
from Utmel Electronic Limited
RF Bipolar Transistors NPN High Frequency [See More]
- Transistor Type: Bipolar RF
- Packing Method: Tape Reel; Tape & Reel (TR)
- Polarity: NPN
- TJ: 150
from Integra Technologies, Inc.
#9632; Silicon LDMOS Technology. ■ POUT-PK = 200W @ ELM Mode S/6.4%/50V; (PAVG = 12.8W). ■ 1030 or 1090 Operating Frequency. ■ Internal Impedance Pre-matched Device. ■ Specified For Use Under Class AB Operation. ■ Metal Based Package Sealed With Ceramic-Epoxy Lid. [See More]
- Transistor Type: Bipolar RF
- Package Type: PL64A1
- Transistor Technology / Material: GaN
- Power Gain: 17
from Utmel Electronic Limited
RF Bipolar Transistors NPN High Frequency [See More]
- Transistor Type: Bipolar RF
- Packing Method: Tape Reel; Tape & Reel (TR)
- Polarity: NPN
- TJ: 150
from Integra Technologies, Inc.
#9632; Silicon LDMOS Technology. ■ POUT-PK = 1000W @ 50uS, 2%, 50V. ■ 1030 Operating Frequency. ■ Internal Impedance Pre-matched Device. ■ Specified For Use Under Class AB Operation. ■ Metal Based Package Sealed With Ceramic-Epoxy Lid. ■ Gold Metallization... [See More]
- Transistor Type: Bipolar RF
- Package Type: PL124A1
- Transistor Technology / Material: GaN
- Power Gain: 18
from Utmel Electronic Limited
RF Bipolar Transistors NPN Low Distort Amp [See More]
- Transistor Type: Bipolar RF
- Packing Method: Tape Reel; Tape & Reel (TR)
- Polarity: NPN
- TJ: 150
from Integra Technologies, Inc.
The high power transistor part number ILD1011M15HV is designed for Avionics systems operating at 1030-1090 . Operating at 507s, 2% pulse conditions this LDMOS FET device supplies a minimum of 15 watts of power at 1030/1090 . All devices are 100% screened for large signal RF parameters. [See More]
- Transistor Type: Bipolar RF
- Package Type: PL32A1
- Transistor Technology / Material: GaN
- Power Gain: 17
from Utmel Electronic Limited
RF Bipolar Transistors NPN Silicon Amp [See More]
- Transistor Type: Bipolar RF
- Packing Method: Tape Reel; Tape & Reel (TR)
- Polarity: NPN
- TJ: 150
from Integra Technologies, Inc.
The high power pulsed transistor part number ILD1214L250 is designed for L-Band systems operating at 1.2 –1.4 GHz. Operating at a pulse width of 1ms with a duty factor of 10%, this dual MOSFET device supplies a minimum of 250 watts of peak pulse power across the instantaneous operating... [See More]
- Transistor Type: Bipolar RF
- Package Type: PL124A1
- Transistor Technology / Material: GaN
- Power Gain: 12.5
from Utmel Electronic Limited
RF Bipolar Transistors TAPE-7 TNS-RFSS [See More]
- Transistor Type: Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: NPN; NPN
- Packing Method: Tape Reel; Tape & Reel (TR)
from Integra Technologies, Inc.
Part number ILD2731M30 is designed for S-Band radar applications operating over the 2.7-3.1 GHz instantaneous frequency band. Under 300us/10% pulsing conditions it easily supplies a minimum of 30 watts of peak output power with well over 10dB gain. Since it operates under Class B or AB bias it... [See More]
- Transistor Type: Bipolar RF
- Package Type: PL32A1
- Transistor Technology / Material: GaN
- Power Gain: 12.5
from Utmel Electronic Limited
RF Bipolar Transistors VCEO=-150V IC=-600mA [See More]
- Transistor Type: Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: PNP; PNP
- Packing Method: Tape Reel; Tape & Reel (TR)
from Integra Technologies, Inc.
#9632; Silicon LDMOS Technology. ■ POUT-PK = 60W @ 300us/20%/32V; (PAVG = 12W). ■ 2.7-3.1GHz Instantaneous Operating Frequency Range. ■ Internal Impedance Pre-matched Device. ■ Specified For Use Under Class AB Operation. ■ Metal Based Package Sealed With Ceramic-Epoxy... [See More]
- Transistor Type: Bipolar RF
- Package Type: PL32A1
- Transistor Technology / Material: GaN
- Power Gain: 10.7
from Utmel Electronic Limited
Transistors RF Bipolar Transistor Si Low Current [See More]
- Transistor Type: Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: NPN; NPN
- Packing Method: Bulk; Bulk
from Integra Technologies, Inc.
Part number ILD2735M120 is designed for S-Band radar applications operating over the 2.7 – 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsed conditions it supplies a minimum of 120 watts of peak output power. Specified operation is with Class AB bias. The broadband test fixture... [See More]
- Transistor Type: Bipolar RF
- Package Type: PL124A1
- Transistor Technology / Material: GaN
- Power Gain: 10
from Integra Technologies, Inc.
Part number ILT2731M130 is a high power transistor which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 2.7-3.1 GHz. It utilizes gold metal LDMOS transistor technology operating in common source configuration. It may be... [See More]
- Transistor Type: Bipolar RF
- Package Type: P64H2
- Transistor Technology / Material: GaN
- Power Gain: 11.7
from Integra Technologies, Inc.
Part number ILT2731M15 is a high power transistor which is. internally matched to 50 ohms. It is designed for S-Band radar. systems and operates over the instantaneous bandwidth of 2.7-3.1. GHz. It utilizes gold metal LDMOS transistor technology operating. in common source configuration. Production... [See More]
- Transistor Type: Bipolar RF
- Package Type: PL32A2
- Transistor Technology / Material: GaN
- Power Gain: 12.1
from Integra Technologies, Inc.
Part number ILT2731M30 is a high power transistor which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 2.7-3.1 GHz. It utilizes gold metal LDMOS transistor technology operating in common source configuration. Production RF... [See More]
- Transistor Type: Bipolar RF
- Package Type: PL32A2
- Transistor Technology / Material: GaN
- Power Gain: 11.5