MOSFET RF Transistors RF Transistors
from Win Source Electronics
Win Source Part Number: 1005099-BLP7G07S-140P,118. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tape & Reel (TR). Standard Package: 100. Voltage - Rated: 65 V. Frequency: 700MHz ~ 1GHz. Gain: 20.6dB. Transistor Type: LDMOS (Dual). Voltage - Test: 28 V. [See More]
- Transistor Type: MOSFET RF
- Power Gain: 20.6
- Package Type: SOT3
- Output Power: 35
from Richardson RFPD
The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz. [See More]
- Transistor Type: MOSFET RF
- Power Gain: 19
- Package Type: Plastic Flangeless
- Output Power: 750
from Infineon Technologies AG
Active Bias Controller for various applications like cellular and cordless phones, DECT, WLAN, PHS and RF modems. The controllers are stabilizing the bias current for NPN transistors and FET ’s. Summary of Features. Stable bias current supply, even at low battery voltage. Low voltage drop. [See More]
- Transistor Type: MOSFET RF
- Packing Method: Tape Reel; TAPE & REEL
- Package Type: SOT343
from Rochester Electronics
RF Small Signal Bipolar Transistor [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SC-60
from ODG (Origin Data Global)
JFET N-CH 25V 100MA TO92 [See More]
- Transistor Type: MOSFET RF; JFET
- Transistor Technology / Material: JFET
- Polarity: N-Channel; N-Channel
- Package Type: TO-92; TO-226-3, TO-92-3 Long Body
from Win Source Electronics
Win Source Part Number: 1028372-MRF1K50HR5. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tape & Reel. Standard Package: 50. Voltage - Rated: 50 V. Frequency: 1.8MHz ~ 500MHz. Gain: 22.5dB. Transistor Type: LDMOS. Power - Output: 1500W. Package / Case:... [See More]
- Transistor Type: MOSFET RF
- Power Gain: 22.5
- Package Type: SOT3
- Output Power: 1500
from Richardson RFPD
The ARF463AG comprises a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. It has been optimized for both linear and high efficiency classes of operation. [See More]
- Transistor Type: MOSFET RF
- Power Gain: 15
- Package Type: Plastic Through-Hole
- Output Power: 100
from Rochester Electronics
Small Signal Bipolar Transistor, 0.6A, 40V, PNP, TO-206AA [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: TO-206AA
- Polarity: PNP
from ODG (Origin Data Global)
NCH 4V DRIVE SERIES [See More]
- Transistor Type: MOSFET RF
from Win Source Electronics
Win Source Part Number: 1033176-MRF24300NR3. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Bulk. Standard Package: 1. Voltage - Rated: 65 V. Frequency: 2.45GHz. Current - Test: 100 mA. Gain: 13.1dB. Transistor Type: LDMOS. Voltage - Test: 32 V. Power -... [See More]
- Transistor Type: MOSFET RF
- Power Gain: 13.1
- Package Type: SOT3
- Output Power: 330
from Richardson RFPD
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies. [See More]
- Transistor Type: MOSFET RF
- Power Gain: 16
- Package Type: Ceramic Flanged
- Output Power: 60
from Rochester Electronics
RF Small Signal Bipolar Transistor, 0.05A, Very High Frequency Band, NPN, TO-92 [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: TO-92; TO-92
- Polarity: NPN
from ODG (Origin Data Global)
NCH 4V DRIVE SERIES [See More]
- Transistor Type: MOSFET RF
from Win Source Electronics
Win Source Part Number: 1042115-A2T26H160-24SR3. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Bulk. Standard Package: 1. Voltage - Rated: 65 V. Frequency: 2.58GHz. Current - Test: 350 mA. Gain: 15.5dB. Transistor Type: LDMOS (Dual). Voltage - Test: 28 V. [See More]
- Transistor Type: MOSFET RF
- Power Gain: 15.5
- Package Type: SOT3
- Output Power: 28
from Richardson RFPD
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies. [See More]
- Transistor Type: MOSFET RF
- Power Gain: 13
- Package Type: Ceramic Flanged
- Output Power: 40
from Rochester Electronics
Small Signal Bipolar Transistor, NPN [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SIP3
- Polarity: NPN
from ODG (Origin Data Global)
RF MOSFET N-CH JFET 5V 3CP [See More]
- Transistor Type: MOSFET RF; JFET
- Transistor Technology / Material: JFET
- Polarity: N-Channel; N-Channel
- Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
from Win Source Electronics
Win Source Part Number: 1042169-A3G35H100-04SR3. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Series: *. Package: Tape & Reel (TR). Standard Package: 250. ECCN: EAR99. Fake Threat In the Open Market: 54 pct. MSL Level: Not Applicable. REACH Status: REACH... [See More]
- Transistor Type: MOSFET RF
- Package Type: SOT3
from Richardson RFPD
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies. [See More]
- Transistor Type: MOSFET RF
- Power Gain: 10
- Package Type: Ceramic Flanged
- Output Power: 150
from Rochester Electronics
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SOT323
- Polarity: PNP
- Packing Method: Tape Reel; Tape & Reel
from ODG (Origin Data Global)
FET RF 15V 200MHZ CP4 [See More]
- Transistor Type: MOSFET RF; MOSFET
- Transistor Technology / Material: MOSFET
- Polarity: N-Channel; N-Channel Dual Gate
- Package Type: TO-253-4, TO-253AA
from Win Source Electronics
Win Source Part Number: 1049351-BLF7G27L-135,118. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tape & Reel (TR). Standard Package: 100. Frequency: 2.6GHz ~ 2.7GHz. Current - Test: 1.3 A. Gain: 16.5dB. Transistor Type: LDMOS. Voltage - Test: 28 V. Power... [See More]
- Transistor Type: MOSFET RF
- Power Gain: 16.5
- Package Type: SOT3
- Output Power: 25
from Richardson RFPD
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies. [See More]
- Transistor Type: MOSFET RF
- Power Gain: 13
- Package Type: Ceramic SMT
- Output Power: 10
from Rochester Electronics
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SC-75
- Polarity: PNP
- Packing Method: Tape Reel; Tape & Reel
from ODG (Origin Data Global)
IC RF LDMOS AMP [See More]
- Transistor Type: MOSFET RF; LDMOS
- Transistor Technology / Material: LDMOS
- Polarity: Dual
- Package Type: TO-270-15 Variant, Flat Leads
from Win Source Electronics
Manufacturer: STMicroelectronics. Win Source Part Number: 1324667-LET9045. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Packaging: Tube. Standard Package: 50. Voltage - Rated: 80 V. Frequency: 960MHz. Current - Test: 300 mA. Gain: 17.5dB. Transistor Type: LDMOS. [See More]
- Transistor Type: MOSFET RF
- Packing Method: Tube; Tube
- Package Type: SOT3; PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Power Gain: 17.5
from Richardson RFPD
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies. [See More]
- Transistor Type: MOSFET RF
- Power Gain: 11
- Package Type: Plastic SMT
- Output Power: 0.7500
from Rochester Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SOT883
- Polarity: PNP
- Packing Method: Tape Reel; Tape & Reel
from ODG (Origin Data Global)
RF MOSFET LDMOS 28V TO270-17 [See More]
- Transistor Type: MOSFET RF; LDMOS
- Transistor Technology / Material: LDMOS
- Polarity: Dual
- Package Type: TO-270-17 Variant, Flat Leads
from Win Source Electronics
Win Source Part Number: 1356101-A3G26H501W17SR3. Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs. Package: Tape & Reel. Fake Threat In the Open Market: 48 pct. MSL Level: Not Applicable. Mfr: NXP USA Inc. Series: *. Product Status: Active. Base Product... [See More]
- Transistor Type: MOSFET RF
- Package Type: SOT3
from Richardson RFPD
RF Power Vertical MOSFET. The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation dis [See More]
- Transistor Type: MOSFET RF
- Power Gain: 18
- Package Type: Ceramic Flanged
- Output Power: 150
from Rochester Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SOT23
- Polarity: PNP
- Packing Method: Tape Reel; Tape & Reel
from ODG (Origin Data Global)
IC TRANS RF LDMOS [See More]
- Transistor Type: MOSFET RF; LDMOS
- Transistor Technology / Material: LDMOS
- Polarity: Dual
- Package Type: TO-270-17 Variant, Gull Wing
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 792704-PTFA220121MV4R1KXUMA1. Series: *. Family Name: PTFA220121M. Categories: Discrete Semiconductor Products. ECCN: EAR99. Estimated EOL Date: 2027. Popularity: Medium. Fake Threat In the Open Market: 44 pct. Supply and Demand Status:... [See More]
- Transistor Type: MOSFET RF
- Package Type: SOT3
from Richardson RFPD
RF Power Vertical MOSFET. The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation dis [See More]
- Transistor Type: MOSFET RF
- Power Gain: 22
- Package Type: Ceramic Flanged
- Output Power: 150
from Rochester Electronics
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SOT23
- Polarity: PNP
- Packing Method: Tape Reel; Tape & Reel
from ODG (Origin Data Global)
IC RF LDMOS AMP [See More]
- Transistor Type: MOSFET RF; LDMOS
- Transistor Technology / Material: LDMOS
- Polarity: Dual
- Package Type: TO-270-17 Variant, Flat Leads
from Win Source Electronics
Manufacturer: STMicroelectronics. Win Source Part Number: 042554-SD4933. Packaging: Tray. Voltage Rating: 200V. Current Rating: 40A. Frequency: 30MHz. Current - Test: 250mA. Gain: 24dB. Transistor Polarity: N-Channel. Voltage - Test: 50V. Power - Output: 300W. Categories: Discrete Semiconductor... [See More]
- Transistor Type: MOSFET RF
- Package Type: SOT3; M177
- Polarity: N-Channel; N-Channel
- Packing Method: Tray; Tray
from Richardson RFPD
RF Power Vertical MOSFET. The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation d [See More]
- Transistor Type: MOSFET RF
- Power Gain: 17
- Package Type: Plastic Flangeless
- Output Power: 600
from Rochester Electronics
Small Signal Bipolar Transistor, 0.15A, 50V, NPN, SC-70 [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SOT323; SC-70 (SOT-323)
- Polarity: NPN
- Packing Method: Tape Reel; Tape & Reel
from ODG (Origin Data Global)
FET RF 2CH 70V 803MHZ [See More]
- Transistor Type: MOSFET RF; LDMOS
- Transistor Technology / Material: LDMOS
- Polarity: Dual
- Package Type: NI-780S-4L
from Win Source Electronics
Manufacturer: STMicroelectronics. Win Source Part Number: 140423-SD4933MR. Packaging: Tray. Voltage Rating: 200V. Current Rating: 40A. Frequency: 30MHz. Current - Test: 250mA. Gain: 24dB. Transistor Polarity: N-Channel. Voltage - Test: 50V. Power - Output: 300W. Categories: Discrete Semiconductor... [See More]
- Transistor Type: MOSFET RF
- Package Type: SOT3; M177
- Polarity: N-Channel; N-Channel
- Packing Method: Tray; Tray
from Richardson RFPD
RF Power Vertical MOSFET. The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation di [See More]
- Transistor Type: MOSFET RF
- Output Power: 300
- Power Gain: 22
- Operating Frequency: 2 to 150
from Rochester Electronics
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SOT-346 (S-Mini)
- Polarity: PNP
- Packing Method: Tape Reel; Tape & Reel
from ODG (Origin Data Global)
AIRFAST RF POWER LDMOS TRANSISTO [See More]
- Transistor Type: MOSFET RF; LDMOS
- Package Type: 24-PowerQFN
- Transistor Technology / Material: LDMOS
- Power Gain: 19.1
from Win Source Electronics
Manufacturer: STMicroelectronics. Win Source Part Number: 935222-STAC4932B. Features: RF Mosfet N-Channel 100 V 500 mA 123MHz 26dB 1000W STAC244B. Package: Tray. Package: STAC244B. Family Name: STAC4932. Categories: Discrete Semiconductor Products. Case / Package: STAC244B. ECCN: EAR99. Popularity:... [See More]
- Transistor Type: MOSFET RF
- Package Type: SOT3; STAC244B
- Polarity: N-Channel
from Richardson RFPD
The VRF2944 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. [See More]
- Transistor Type: MOSFET RF
- Power Gain: 25
- Package Type: Ceramic Flanged
- Output Power: 400
from Rochester Electronics
Small Signal Bipolar Transistor, 0.15A, 50V, PNP [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SC-59-3
- Polarity: PNP
- Packing Method: Tape Reel; Tape & Reel
from ODG (Origin Data Global)
AIRFAST RF POWER LDMOS TRANSISTO [See More]
- Transistor Type: MOSFET RF; LDMOS
- Package Type: OM-1230-4L2S
- Transistor Technology / Material: LDMOS
- Power Gain: 17.8
from Rochester Electronics
Small Signal Bipolar Transistor, 0.5A, 140V, PNP [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: TO-220; TO-220FM
- Polarity: PNP
from ODG (Origin Data Global)
IC TRANS RF LDMOS [See More]
- Transistor Type: MOSFET RF; LDMOS
- Transistor Technology / Material: LDMOS
- Polarity: Dual
- Package Type: NI-1230-4LS2L
from Rochester Electronics
Small Signal Bipolar Transistor, 1A, 100V, PNP, TO-243AA [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: TO-243AA
- Polarity: PNP
from ODG (Origin Data Global)
AIRFAST RF LDMOS WIDEBAND INTEGR [See More]
- Transistor Type: MOSFET RF; LDMOS
- Package Type: OM-1230-4L
- Transistor Technology / Material: LDMOS
- Power Gain: 18.9
from Rochester Electronics
Small Signal Bipolar Transistor, 1.5, PNP [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: TO-251-3, IPak, TO-251AA
- Polarity: PNP
from ODG (Origin Data Global)
AIRFAST RF POWER LDMOS TRANSISTO [See More]
- Transistor Type: MOSFET RF; LDMOS
- Transistor Technology / Material: LDMOS
- Polarity: Dual
- Package Type: ACP-1230S-4L2S
from Rochester Electronics
Small Signal Bipolar Transistor, PNP [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: TO-126
- Polarity: PNP
from ODG (Origin Data Global)
RF MOSFET LDMOS 10.8V 16DFN [See More]
- Transistor Type: MOSFET RF; LDMOS
- Package Type: 16-VDFN Exposed Pad
- Transistor Technology / Material: LDMOS
- Operating Frequency: 136 to 941
from Rochester Electronics
Small Signal Bipolar Transistor, 3A, 25V, PNP [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SP-8
- Polarity: PNP
from ODG (Origin Data Global)
FET RF 2CH 40V 520MHZ TO270-4 [See More]
- Transistor Type: MOSFET RF; LDMOS
- Transistor Technology / Material: LDMOS
- Polarity: Dual
- Package Type: TO-270AB
from Rochester Electronics
Small Signal Bipolar Transistor, 3A, PNP [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: IPAK-3
- Polarity: PNP
- Packing Method: Bulk; Bulk
from ODG (Origin Data Global)
IC TRANS RF LDMOS [See More]
- Transistor Type: MOSFET RF; LDMOS
- Package Type: SOT89; TO-243AA
- Transistor Technology / Material: LDMOS
- Power Gain: 20.8
from Rochester Electronics
Small Signal Bipolar Transistor, 8A, PNP [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: DPAK-3
- Polarity: PNP
- Packing Method: Tape Reel; Tape & Reel
from ODG (Origin Data Global)
FET RF 30V 520MHZ PLD [See More]
- Transistor Type: MOSFET RF; LDMOS
- Package Type: PLD-1.5W
- Transistor Technology / Material: LDMOS
- Power Gain: 18.3
from Rochester Electronics
Small Signal Bipolar Transistor, 1A, 16V, PNP [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: TO-220; TO-220-3
- Polarity: PNP
from ODG (Origin Data Global)
FET RF 40V 520MHZ TO270-2G [See More]
- Transistor Type: MOSFET RF; LDMOS
- Package Type: TO-270BA
- Transistor Technology / Material: LDMOS
- Power Gain: 17.7
from Rochester Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Polarity: NPN
from ODG (Origin Data Global)
FET RF 40V 520MHZ TO-270-2 [See More]
- Transistor Type: MOSFET RF; LDMOS
- Package Type: TO-270AA
- Transistor Technology / Material: LDMOS
- Power Gain: 17.7
from Rochester Electronics
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: MPAK4
- Polarity: NPN
- Packing Method: Tape Reel; Tape & Reel
from ODG (Origin Data Global)
FET RF 70V 960MHZ PLD [See More]
- Transistor Type: MOSFET RF; LDMOS
- Package Type: OM-780-2
- Transistor Technology / Material: LDMOS
- Power Gain: 19.2
from Rochester Electronics
Small Signal Bipolar Transistor, 1A, 50V, NPN [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: TO-92; TO-92MOD
- Polarity: NPN
- Packing Method: Tape Reel; Tape & Reel
from ODG (Origin Data Global)
RF MOSFET LDMOS 28V PLD-1.5W [See More]
- Transistor Type: MOSFET RF; LDMOS
- Package Type: PLD-1.5W
- Transistor Technology / Material: LDMOS
- Power Gain: 21.7
from Rochester Electronics
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET [See More]
- Transistor Type: MOSFET RF
- Package Type: SOT-343
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
from ODG (Origin Data Global)
FET RF 2CH 105V 920MHZ OM780-4 [See More]
- Transistor Type: MOSFET RF; LDMOS
- Transistor Technology / Material: LDMOS
- Polarity: Dual
- Package Type: OM-780-4L
from Rochester Electronics
Small Signal Bipolar Transistor, 1A, 80V, PNP, HUSON3 [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SOT1061
- Polarity: PNP
- Packing Method: Tape Reel; Tape & Reel
from ODG (Origin Data Global)
IC TRANS RF LDMOS [See More]
- Transistor Type: MOSFET RF; LDMOS
- Transistor Technology / Material: LDMOS
- Polarity: Dual
- Package Type: SOT-979A
from Utmel Electronic Limited
DUAL N CH RF MOSFET, 12V, 30MA, 4-SOT-143R - More Details [See More]
- Transistor Type: MOSFET RF
- Packing Method: Tape Reel; Tape & Reel (TR)
- Transistor Technology / Material: SILICON
- Number of units in IC: 1
from Integra Technologies, Inc.
IGN0110UM100 is a dual gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100 – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain. Specified... [See More]
- Transistor Type: MOSFET RF
- Package Type: PL22D1
- Transistor Technology / Material: GaN
- Power Gain: 12.5
from MACOM
At MACOM we offer a broad range of TMOS and DMOS RF power MOSFET transistor products as discrete devices from DC to 1.0 GHz. Our high power MOSFET transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our all gold... [See More]
- Transistor Type: MOSFET RF
- Transistor Grade / Operating Range: Commercial (optional feature); Industrial (optional feature)
- Transistor Technology / Material: Silicon
- Package Type: Flange Ceramic
from Karl Kruse GmbH & Co. KG
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]
- Transistor Type: MOSFET RF
from Utmel Electronic Limited
RF MOSFET LDMOS DUAL 50V SOT539B [See More]
- Transistor Type: MOSFET RF
- Transistor Technology / Material: SILICON
- Polarity: N-Channel; N-CHANNEL
- Packing Method: Tape Reel; Tray
from Integra Technologies, Inc.
#9632; GaN on SiC HEMT Technology. ■ POUT-PK ≥ 125W @ 2ms/20%/50V. ■ 1.2-1.4GHz Instantaneous Operating Frequency Range. ■ Internal Impedance Pre-matched Device. ■ Depletion Mode Device. ■ Negative Gate Voltage and Bias Sequencing Required. ■ Specified For Use... [See More]
- Transistor Type: MOSFET RF
- Package Type: PL44C1
- Transistor Technology / Material: GaN
- Power Gain: 18
from Utmel Electronic Limited
RF MOSFET LDMOS SOT1462-1 [See More]
- Transistor Type: MOSFET RF
- Output Power: 25
- Packing Method: Tape Reel; Tape & Reel (TR)
from Integra Technologies, Inc.
#9632; GaN on SiC HEMT Technology. ■ POUT-PK > 500W @ 2.0ms / 20% / 50V. ■ 1.2-1.4GHz Instantaneous Operating Frequency Range. ■ Internal Impedance Pre-matched Device. ■ Depletion Mode Device. ■ Negative Gate Voltage and Bias Sequencing Required. ■ Specified... [See More]
- Transistor Type: MOSFET RF
- Package Type: PL95A1
- Transistor Technology / Material: GaN
- Power Gain: 16
from Utmel Electronic Limited
RF MOSFET Transistors BL RF [See More]
- Transistor Type: MOSFET RF
- Power Gain: 19.2
- Packing Method: Tape Reel; Tape & Reel (TR)
- Output Power: 350
from Integra Technologies, Inc.
#9632; GaN on SiC HEMT Technology. ■ POUT-PK ≥ 380W @ 150us/10%/50V. ■ 1.21-1.40 GHz Instantaneous Operating Frequency Range. ■ Internal Impedance Input Pre-matched Device. ■ Depletion Mode Device. ■ Negative Gate Voltage and Bias Sequencing Required. ■... [See More]
- Transistor Type: MOSFET RF
- Package Type: PL44C1
- Transistor Technology / Material: GaN
- Power Gain: 19.5
from Utmel Electronic Limited
RF MOSFET Transistors HV8 2.6GHZ 80W NI780S-4 [See More]
- Transistor Type: MOSFET RF
- Transistor Technology / Material: SILICON
- Polarity: N-Channel; N-CHANNEL
- Packing Method: Tape Reel; Tape & Reel (TR)
from Integra Technologies, Inc.
#9632; GaN on SiC HEMT Technology. ■ POUT-PK = 500W @ 100us/10%/50V. ■ 1.2-1.4GHz Instantaneous Operating Frequency Range. ■ Internal Impedance Pre-matched Device. ■ Depletion Mode Device. ■ Negative Gate Voltage and Bias Sequencing Required. ■ Specified For Use... [See More]
- Transistor Type: MOSFET RF
- Package Type: PL44C1
- Transistor Technology / Material: GaN
- Power Gain: 17
from Utmel Electronic Limited
RF MOSFET Transistors HV8 2GHZ 140W NI780S [See More]
- Transistor Type: MOSFET RF
- Power Gain: 17.9
- Packing Method: Tape Reel; Tape & Reel (TR)
- Output Power: 34
from Integra Technologies, Inc.
#9632; GaN on SiC HEMT Technology. ■ POUT-PK ≥ 600W @ 150us/10%/50V. ■ 1.2-1.4GHz Instantaneous Operating Frequency Range. ■ Internal Impedance Pre-matched Device. ■ Depletion Mode Device. ■ Negative Gate Voltage and Bias Sequencing Required. ■ Specified For... [See More]
- Transistor Type: MOSFET RF
- Package Type: PL64A1
- Transistor Technology / Material: GaN
- Power Gain: 19.7
from Utmel Electronic Limited
RF MOSFET Transistors HV8 300W 50V NI1230S [See More]
- Transistor Type: MOSFET RF
- Transistor Technology / Material: SILICON
- Polarity: N-Channel; N-CHANNEL
- Packing Method: Tape Reel; Tape & Reel (TR)
from Integra Technologies, Inc.
#9632; GaN on SiC HEMT Technology. ■ POUT-PK ≥ 650W @ 300us/10%/50V. ■ 1.2-1.4GHz Instantaneous Operating Frequency Range. ■ Internal Impedance Pre-matched Device. ■ Depletion Mode Device. ■ Negative Gate Voltage and Bias Sequencing Required. ■ Specified For... [See More]
- Transistor Type: MOSFET RF
- Package Type: PL95A1
- Transistor Technology / Material: GaN
- Power Gain: 12.5
from Utmel Electronic Limited
RF MOSFET Transistors HV8 900MHZ 60W OM780-2 [See More]
- Transistor Type: MOSFET RF
- Packing Method: Tape Reel; Tape & Reel (TR)
- Transistor Technology / Material: SILICON
- Number of units in IC: 1
from Integra Technologies, Inc.
#9632; GaN on SiC HEMT Technology. ■ POUT-PK ≥ 160W @ 100us/10%/50V. ■ 420 to 450 Operating Frequency. ■ Internal Input Impedance Pre-matched Device. ■ No Internal Output Match for Efficiency Optimization. ■ Depletion Mode Device - Negative Gate Voltage and Bias... [See More]
- Transistor Type: MOSFET RF
- Package Type: PL44C1
- Transistor Technology / Material: GaN
- Power Gain: 22
from Utmel Electronic Limited
RF MOSFET Transistors N-Ch Radio Freq 1A 3W 7V VDSS [See More]
- Transistor Type: MOSFET RF
- Power Gain: 12
- Packing Method: Tape Reel; Cut Tape (CT)
- Output Power: 1.58
from Utmel Electronic Limited
RF MOSFET Transistors TAPE-7 MOS-RFSS [See More]
- Transistor Type: MOSFET RF
- Packing Method: Tape Reel; Tape & Reel (TR)
- Transistor Technology / Material: SILICON
- Number of units in IC: 2
from Utmel Electronic Limited
RF MOSFET Transistors VHV6 500W 50V NI780H [See More]
- Transistor Type: MOSFET RF
- Transistor Technology / Material: SILICON
- Polarity: N-Channel; N-CHANNEL
- Packing Method: Tape Reel; Tape & Reel (TR)
from Utmel Electronic Limited
Trans RF MOSFET 65V 15-Pin TO-270 W GULL T/R [See More]
- Transistor Type: MOSFET RF
- Power Gain: 26
- Packing Method: Tape Reel; Tape & Reel (TR)
from Utmel Electronic Limited
Trans RF MOSFET 65V 15-Pin TO-272 W T/R [See More]
- Transistor Type: MOSFET RF
- Power Gain: 26
- Packing Method: Tape Reel; Tape & Reel (TR)
from Utmel Electronic Limited
Trans RF MOSFET N-CH 110V 3-Pin TO-270 T/R [See More]
- Transistor Type: MOSFET RF
- Transistor Technology / Material: SILICON
- Polarity: N-Channel; N-CHANNEL
- Packing Method: Tape Reel; Tape & Reel (TR)
from Utmel Electronic Limited
Trans RF MOSFET N-CH 110V 3-Pin TO-272 T/R [See More]
- Transistor Type: MOSFET RF
- Transistor Technology / Material: SILICON
- Polarity: N-Channel; N-CHANNEL
- Packing Method: Tape Reel; Tape & Reel (TR)
from Utmel Electronic Limited
Trans RF MOSFET N-CH 110V 42A 5-Pin SOT-539A [See More]
- Transistor Type: MOSFET RF
- Transistor Technology / Material: SILICON
- Polarity: N-Channel; N-CHANNEL
- Number of units in IC: 2
from Utmel Electronic Limited
Trans RF MOSFET N-CH 40V 2A 3-Pin PowerSO-10RF (Formed lead) Tube [See More]
- Transistor Type: MOSFET RF
- Packing Method: Tube; Tube
- Polarity: N-Channel; N-CHANNEL
- Number of units in IC: 1
from Utmel Electronic Limited
Trans RF MOSFET N-CH 65V 17-Pin TO-272 W T/R [See More]
- Transistor Type: MOSFET RF
- Transistor Technology / Material: SILICON
- Polarity: N-Channel; N-CHANNEL
- Packing Method: Tape Reel; Tape & Reel (TR)
from Utmel Electronic Limited
Trans RF MOSFET N-CH 65V 3-Pin NI-880 T/R [See More]
- Transistor Type: MOSFET RF
- Power Gain: 17.5
- Packing Method: Tape Reel; Tape & Reel (TR)
- Output Power: 50
from Utmel Electronic Limited
Trans RF MOSFET N-CH 65V 9-Pin Case 375J-02 T/R [See More]
- Transistor Type: MOSFET RF
- Transistor Technology / Material: SILICON
- Polarity: N-Channel; N-CHANNEL
- Packing Method: Tape Reel; Tape & Reel (TR)
from Utmel Electronic Limited
Trans RF MOSFET N-CH 68V 3-Pin NI-880S T/R [See More]
- Transistor Type: MOSFET RF
- Transistor Technology / Material: SILICON
- Polarity: N-Channel; N-CHANNEL
- Packing Method: Tape Reel; Tape & Reel (TR)
from Utmel Electronic Limited
Trans RF MOSFET N-CH 68V 5-Pin TO-270 W T/R [See More]
- Transistor Type: MOSFET RF
- Transistor Technology / Material: SILICON
- Polarity: N-Channel; N-CHANNEL
- Packing Method: Tape Reel; Tape & Reel (TR)
from Utmel Electronic Limited
Trans RF MOSFET N-CH 70V 5-Pin NI-1230 T/R [See More]
- Transistor Type: MOSFET RF
- Transistor Technology / Material: SILICON
- Polarity: N-Channel; N-CHANNEL
- Packing Method: Tape Reel; Tape & Reel (TR)
from Utmel Electronic Limited
Trans RF MOSFET N-CH 8V 0.025A Automotive 4-Pin(3+Tab) SOT-143 T/R [See More]
- Transistor Type: MOSFET RF
- Number of units in IC: 1
- Packing Method: Tape Reel; Tape & Reel (TR)
- TJ: -55 to 150
from Utmel Electronic Limited
Transistors RF MOSFET 2170MHZ 10W [See More]
- Transistor Type: MOSFET RF
- Power Gain: 14.5
- Packing Method: Tape Reel; Tape & Reel (TR)
- Output Power: 10