Shipping Tube / Stick Magazine RF Transistors
from Win Source Electronics
Manufacturer: onsemi. Win Source Part Number: 1324019-NJL0302DG. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Single. Packaging: Tube. Standard Package: 25. Mounting: Through Hole. Power - Max: 180 W. Voltage - Collector Emitter Breakdown (Max): 260 V. Current -... [See More]
- Packing Method: Tube; Tube
- Polarity: PNP
- Transistor Type: Bipolar RF
- Package Type: SOT3; TO-264-5
from Rochester Electronics
Power Bipolar Transistor, 15A, 60V, PNP [See More]
- Packing Method: Tube; Tube
- Polarity: PNP
- Transistor Type: Bipolar RF
- Package Type: TO-220; TO-220AB
from Win Source Electronics
Manufacturer: STMicroelectronics. Win Source Part Number: 1236549-PD55008-E. Packaging: Tube. Package: PowerSO-10 Exposed Bottom Pad. Current Rating: 4A. Frequency: 500MHz. Current - Test: 150mA. Gain: 17dB. Transistor Type: LDMOS. Voltage - Test: 12.5V. Power - Output: 8W. Categories: Discrete... [See More]
- Packing Method: Tube; Tube
- Power Gain: 17
- Package Type: SOT3
- Output Power: 8
from Rochester Electronics
PNP Epitaxial Silicon Transistor [See More]
- Packing Method: Tube; Tube
- Package Type: TO-264-3
- Polarity: PNP
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1186338-IPP60R190P6. Series: CoolMOS P6. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-220-3. Technology: MOSFET. Current - Continuous Drain (Id) @ 25 °C: 20.2A... [See More]
- Packing Method: Tube; Tube
- TJ: -55 to 150
- Package Type: TO-220; SOT3
from Rochester Electronics
PNP Epitaxial Silicon Transistor [See More]
- Packing Method: Tube; Tube
- Package Type: TO-264-3
- Polarity: PNP
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1187054-IRF540. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Packing Method: Tube; Tube
- Package Type: TO-220; SOT3
- Polarity: N-Channel; N-Channel
- TJ: -55 to 175
from Rochester Electronics
PNP Epitaxial Silicon Transistor [See More]
- Packing Method: Tube; Tube
- Package Type: TO-3; TO-3P-3L
- Polarity: PNP
from Win Source Electronics
Manufacturer: STMicroelectronics. Win Source Part Number: 1187113-IRF640. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Packing Method: Tube; Tube
- Package Type: TO-220; SOT3
- Polarity: N-Channel; N-Channel
- TJ: 150
from Rochester Electronics
Power Bipolar Transistor, 0.1A, 300V, NPN, TO-126, 3 Pin [See More]
- Packing Method: Tube; Tube
- Polarity: NPN
- Transistor Type: Bipolar RF
- Package Type: TO-126
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1257868-SPD04N60C3. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Family Name: SPD04N60C3. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO252-3. Drive Voltage (Max Rds... [See More]
- Packing Method: Tube; Tube
- Package Type: SOT3; TO-252 (DPAK)
- Polarity: N-Channel; N-Channel
- TJ: -55 to 150
from Rochester Electronics
NPN Epitaxial Silicon Transistor [See More]
- Packing Method: Tube; Tube
- Package Type: TO-264-3
- Polarity: NPN
from Win Source Electronics
Manufacturer: ON Semiconductor. Win Source Part Number: 814192-FCPF380N65FL1. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650V. Supplier Device Package: TO-220F. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Packing Method: Tube; Tube
- Package Type: TO-220; SOT3
- Polarity: N-Channel
- TJ: -55 to 150
from Rochester Electronics
Power Bipolar Transistor, 10A, 100V, PNP, TO-247, Plastic/Epoxy, 3 Pin [See More]
- Packing Method: Tube; Tube
- Polarity: PNP
- Transistor Type: Bipolar RF
- Package Type: TO-247; TO-247
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 724023-IPI04N03LA. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO262-3. Drive Voltage (Max Rds On, Min Rds On):... [See More]
- Packing Method: Tube; Tube
- Package Type: SOT3
- Polarity: N-Channel; N-Channel
- TJ: -55 to 175
from Rochester Electronics
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin [See More]
- Packing Method: Tube; Tube
- Polarity: NPN
- Transistor Type: Bipolar RF
- Package Type: SOT186A
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1186460-IPU04N03LA. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: P-TO251-3-1. Drive Voltage (Max Rds On, Min Rds... [See More]
- Packing Method: Tube; Tube
- Package Type: SOT3
- Polarity: N-Channel; N-Channel
- TJ: -55 to 175
from Rochester Electronics
10 Amp, 450 V NPN Power Bipolar Transistor [See More]
- Packing Method: Tube; Tube
- Polarity: NPN
- Transistor Type: Bipolar RF
- Package Type: TO-220; TO-220-3 FullPak
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 718696-IRF135B203. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO220-3. Drive Voltage (Max Rds On, Min Rds On):... [See More]
- Packing Method: Tube; Tube
- Package Type: TO-220; SOT3
- Polarity: N-Channel; N-Channel
- TJ: -55 to 175
from Rochester Electronics
General Purpose High Current NPN Transistor Arrays, 7-Element, Common-Emitter [See More]
- Packing Method: Tube; Tube
- Package Type: CERDIP16
- Polarity: NPN
from Win Source Electronics
Manufacturer: STMicroelectronics. Win Source Part Number: 808865-IRF530. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 100V. Part Status: Obsolete (End Of Life). Supplier Device Package: TO-220AB. Drive Voltage... [See More]
- Packing Method: Tube; Tube
- Package Type: TO-220; SOT3
- Polarity: N-Channel
- TJ: -55 to 175
from Rochester Electronics
General Purpose High Current NPN Transistor Arrays, 5-Element [See More]
- Packing Method: Tube; Tube
- Package Type: SOIC16
- Polarity: NPN
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1187058-IRF540S. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK (TO-263). Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Packing Method: Tube; Tube
- Package Type: TO-263; SOT3
- Polarity: N-Channel; N-Channel
- TJ: -55 to 175
from Rochester Electronics
General Purpose High Current NPN Transistor Arrays, 5-Element [See More]
- Packing Method: Tube; Tube
- Package Type: PDIP16
- Polarity: NPN
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1187082-IRF620. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Packing Method: Tube; Tube
- Package Type: TO-220; SOT3
- Polarity: N-Channel; N-Channel
- TJ: -65 to 150
from Rochester Electronics
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin [See More]
- Packing Method: Tube; Tube
- Polarity: PNP
- Transistor Type: Bipolar RF
- Package Type: TO-220; TO-220
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1187103-IRF630S. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK (TO-263). Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Packing Method: Tube; Tube
- Package Type: TO-263; SOT3
- Polarity: N-Channel; N-Channel
- TJ: -55 to 150
from Rochester Electronics
ESBC Rated NPN Power Transistor [See More]
- Packing Method: Tube; Tube
- Package Type: TO-220; TO-220-3
- Polarity: NPN
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1187117-IRF640S. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK. Drive Voltage (Max Rds On, Min Rds On): 10V. Status:... [See More]
- Packing Method: Tube; Tube
- Package Type: TO-263; SOT3
- Polarity: N-Channel; N-Channel
- TJ: -55 to 150
from Rochester Electronics
NPN Epitaxial Silicon Transistor [See More]
- Packing Method: Tube; Tube
- Package Type: IPAK-3 / DPAK-3 STRAIGHT LEAD
- Polarity: NPN
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1187553-IRFD010. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: 4-DIP, Hexdip, HVMDIP. Drive Voltage (Max Rds On, Min Rds... [See More]
- Packing Method: Tube; Tube
- Package Type: SOT3
- Polarity: N-Channel; N-Channel
- TJ: -55 to 150
from Rochester Electronics
PNP Epitaxial Silicon Transistor [See More]
- Packing Method: Tube; Tube
- Package Type: IPAK-3 / DPAK-3 STRAIGHT LEAD
- Polarity: PNP
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1187559-IRFD113. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: 4-DIP, Hexdip, HVMDIP. Drive Voltage (Max Rds On, Min Rds... [See More]
- Packing Method: Tube; Tube
- Package Type: SOT3
- Polarity: N-Channel; N-Channel
- TJ: -55 to 150
from Rochester Electronics
Power Bipolar Transistor, 42V V(BR)CEO, 3-Element, NPN, Silicon, TO-5, Metal, 3 Pin [See More]
- Packing Method: Tube; Tube
- Polarity: NPN
- Transistor Type: Bipolar RF
- Package Type: TO-CAN-3
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1187568-IRFD9010. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: 4-DIP, Hexdip, HVMDIP. Drive Voltage (Max Rds On, Min Rds... [See More]
- Packing Method: Tube; Tube
- Package Type: SOT3
- Polarity: P-Channel; P-Channel
- TJ: -55 to 150
from Rochester Electronics
RF Power Field-Effect Transistor [See More]
- Packing Method: Tube; Tube
- Package Type: SIL3
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1187570-IRFD9020. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: 4-DIP, Hexdip, HVMDIP. Drive Voltage (Max Rds On, Min Rds... [See More]
- Packing Method: Tube; Tube
- Package Type: SOT3
- Polarity: P-Channel; P-Channel
- TJ: -55 to 175
from Rochester Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon [See More]
- Packing Method: Tube; Tube
- Polarity: PNP
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SC-70-6
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1187961-IRFR9024. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D-Pak. Drive Voltage (Max Rds On, Min Rds On): 10V. Status:... [See More]
- Packing Method: Tube; Tube
- Package Type: SOT3; TO-252 (DPAK)
- Polarity: P-Channel; P-Channel
- TJ: -55 to 150
from Rochester Electronics
NPN microwave power transistor [See More]
- Packing Method: Tube; Tube
- Package Type: SOT439A2
- Polarity: NPN
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1188161-IRFZ20. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Packing Method: Tube; Tube
- Package Type: TO-220; SOT3
- Polarity: N-Channel; N-Channel
- TJ: -55 to 150
from Rochester Electronics
NPN microwave power transistor [See More]
- Packing Method: Tube; Tube
- Package Type: SOT-44
- Polarity: NPN
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1188182-IRFZ40. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Packing Method: Tube; Tube
- Package Type: TO-220; SOT3
- Polarity: N-Channel; N-Channel
- TJ: -55 to 175
from Rochester Electronics
Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, MS-012AA [See More]
- Packing Method: Tube; Tube
- Polarity: NPN
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SOIC8
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1257872-SPD07N60C3. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Family Name: SPD07N60C3. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO252-3. Drive Voltage (Max Rds... [See More]
- Packing Method: Tube; Tube
- Package Type: SOT3; TO-252 (DPAK)
- Polarity: N-Channel; N-Channel
- TJ: -55 to 150
from Rochester Electronics
Audio Dual Matched PNP Transistor [See More]
- Packing Method: Tube; Tube
- Package Type: PDIP8
- Polarity: PNP
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1258062-SPP15P10P. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO220-3. Drive Voltage (Max Rds On, Min Rds On):... [See More]
- Packing Method: Tube; Tube
- Package Type: TO-220; SOT3
- Polarity: P-Channel; P-Channel
- TJ: -55 to 175
from Rochester Electronics
Power Bipolar Transistor, 10A, 60V, NPN [See More]
- Packing Method: Tube; Tube
- Polarity: NPN
- Transistor Type: Bipolar RF
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1258134-SPP80N06S2-05. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO220-3-1. Drive Voltage (Max Rds On, Min... [See More]
- Packing Method: Tube; Tube
- Package Type: TO-220; SOT3
- Polarity: N-Channel; N-Channel
- TJ: -55 to 175
from Shenzhen Shengyu Electronics Technology Limited
TRANS NPN 50V 0.5A TO39 [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRANS NPN 40V 0.2A TO92-3 [See More]
- Packing Method: Tube; Tube
from Utmel Electronic Limited
FET RF 25V 870MHZ [See More]
- Packing Method: Tube; Tube
- Number of units in IC: 1
- Polarity: N-Channel; N-CHANNEL
- TJ: -65 to 165
from Shenzhen Shengyu Electronics Technology Limited
TRANS NPN 30V 0.6A TO18 [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
PB-F POWER TRANSISTOR TO-3PL PC= [See More]
- Packing Method: Tube; Tube
from Utmel Electronic Limited
FET RF 40V 500MHZ PWRSO10 [See More]
- Packing Method: Tube; Tube
- Number of units in IC: 1
- Polarity: N-Channel; N-CHANNEL
- TJ: -65 to 165
from Shenzhen Shengyu Electronics Technology Limited
TRANS PNP 80V 1A TO39 [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRANS NPN 450V 8A TO220NIS [See More]
- Packing Method: Tube; Tube
from Utmel Electronic Limited
FET RF 40V 870MHZ [See More]
- Packing Method: Tube; Tube
- Number of units in IC: 1
- Polarity: N-Channel; N-CHANNEL
- TJ: -65 to 150
from Shenzhen Shengyu Electronics Technology Limited
TRANS NPN 80V 1A SOT-32 [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRANS NPN 50V 5A TO220-3 [See More]
- Packing Method: Tube; Tube
from Utmel Electronic Limited
ON SEMICONDUCTOR - MJD2955G - RF TRANSISTOR, PNP, -60V 2MHZ D-PAK [See More]
- Packing Method: Tube; Tube
- Transistor Technology / Material: SILICON
- Polarity: PNP; PNP
- Number of units in IC: 1
from Shenzhen Shengyu Electronics Technology Limited
TRANS NPN DARL 40V 1.2A TO92-3 [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRANS PNP 45V 1.5A TO126-3 [See More]
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
TRANS PNP DARL 60V 8A TO220 [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRANS NPN 45V 2A TO220 [See More]
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
TRANS NPN DARL 100V 12A TO3 [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRANS NPN 45V 10A SOT93 [See More]
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
TRANS NPN DARL 80V 10A TO220 [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRANS PNP 45V 4A [See More]
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
TRANS PNP 20V 5A PW-MOLD [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRANS NPN 450V 5A TO220AB [See More]
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
TRANS PNP 300V 0.1A TO126-3 [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRANS NPN 450V 5A TO220F [See More]
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
TRANS PNP 50V 10A TO220NIS [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRANS NPN 400V 8A TO220-3 [See More]
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
TRANS PNP 230V 15A TO3P [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
RF SMALL SIGNAL TRANSISTOR [See More]
- Packing Method: Tube; Tube
- Output Power: 0.1500
from Shenzhen Shengyu Electronics Technology Limited
TRANS PNP 250V 17A TO264-3 [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
RF TRANS 5 PNP 15V 5.5GHZ 16QFN [See More]
- Packing Method: Tube; Tube
- Output Power: 0.1500
from Shenzhen Shengyu Electronics Technology Limited
TRANS PNP 250V 17A TO3P [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRANS NPN 100V 7A TO220-3 [See More]
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
TRANS PNP 20A 50V TO220 [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRANS NPN 300V 0.2A TO126 [See More]
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
TRANS PNP 140V 12A TO3P-3L [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRANS NPN 70V 5A TO220F-3 [See More]
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
TRANS NPN 230V 15A TO3P [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRANS PNP DARL 100V 2A IPAK [See More]
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
TRANS NPN 50V 10A TO220F-3FS [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRANS NPN 700V 4A DPAK [See More]
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
TRANS NPN 50V 5A TO220-3 [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRANS NPN 400V 4A TO220F [See More]
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
TRANS NPN 80V 5A TO220FP [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRANS 8NPN DARL 95V 0.5A 18DIP [See More]
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
TRANS PNP 230V 15A TO264 [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRANSISTOR NPN 250V TO-3P [See More]
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
TRANS NPN DARL 80V 25A TO247-3 [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRANS PNP 100V 5A TO220AB [See More]
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
TRANS NPN DARL 325V 4A TO220-3 [See More]
- Packing Method: Tube; Tube
from Acme Chip Technology Co., Limited
TRANS PNP DARL 60V 10A TO247-3 [See More]
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
CONN D-SUB PLUG 9POS VERT SLDR [See More]
- Packing Method: Tube; Tube
- Output Power: 1
from Acme Chip Technology Co., Limited
IC PWR RELAY 7NPN 1:1 16DIP [See More]
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
CONN D-SUB RCPT 9POS VERT SLDR [See More]
- Packing Method: Tube; Tube
- Output Power: 1
from Acme Chip Technology Co., Limited
TRANS 8NPN DARL 50V 0.5A 18DIP [See More]
- Packing Method: Tube; Tube