Shipping Tube / Stick Magazine RF Transistors

103 Results
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single -- 1324019-NJL0302DG [NJL0302DG from onsemi]
from Win Source Electronics

Manufacturer: onsemi. Win Source Part Number: 1324019-NJL0302DG. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Single. Packaging: Tube. Standard Package: 25. Mounting: Through Hole. Power - Max: 180 W. Voltage - Collector Emitter Breakdown (Max): 260 V. Current -... [See More]

  • Packing Method: Tube; Tube
  • Polarity: PNP
  • Transistor Type: Bipolar RF
  • Package Type: SOT3; TO-264-5
2N6490
from Rochester Electronics

Power Bipolar Transistor, 15A, 60V, PNP [See More]

  • Packing Method: Tube; Tube
  • Polarity: PNP
  • Transistor Type: Bipolar RF
  • Package Type: TO-220; TO-220AB
Electrical Parts - PD55008-E -- 1236549-PD55008-E [PD55008-E from STMicroelectronics]
from Win Source Electronics

Manufacturer: STMicroelectronics. Win Source Part Number: 1236549-PD55008-E. Packaging: Tube. Package: PowerSO-10 Exposed Bottom Pad. Current Rating: 4A. Frequency: 500MHz. Current - Test: 150mA. Gain: 17dB. Transistor Type: LDMOS. Voltage - Test: 12.5V. Power - Output: 8W. Categories: Discrete... [See More]

  • Packing Method: Tube; Tube
  • Power Gain: 17
  • Package Type: SOT3
  • Output Power: 8
2SA1943OTU [2SA1943OTU from onsemi]
from Rochester Electronics

PNP Epitaxial Silicon Transistor [See More]

  • Packing Method: Tube; Tube
  • Package Type: TO-264-3
  • Polarity: PNP
Electronic Surplus - IPP60R190P6 -- 1186338-IPP60R190P6 [IPP60R190P6 from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1186338-IPP60R190P6. Series: CoolMOS P6. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-220-3. Technology: MOSFET. Current - Continuous Drain (Id) @ 25 °C: 20.2A... [See More]

  • Packing Method: Tube; Tube
  • TJ: -55 to 150
  • Package Type: TO-220; SOT3
2SA1943RTU [2SA1943RTU from onsemi]
from Rochester Electronics

PNP Epitaxial Silicon Transistor [See More]

  • Packing Method: Tube; Tube
  • Package Type: TO-264-3
  • Polarity: PNP
Electronic Surplus - IRF540 -- 1187054-IRF540 [IRF540 from Vishay Intertechnology, Inc.]
from Win Source Electronics

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187054-IRF540. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

  • Packing Method: Tube; Tube
  • Package Type: TO-220; SOT3
  • Polarity: N-Channel; N-Channel
  • TJ: -55 to 175
2SA1962RTU [2SA1962RTU from onsemi]
from Rochester Electronics

PNP Epitaxial Silicon Transistor [See More]

  • Packing Method: Tube; Tube
  • Package Type: TO-3; TO-3P-3L
  • Polarity: PNP
Electronic Surplus - IRF640 -- 1187113-IRF640 [IRF640 from STMicroelectronics]
from Win Source Electronics

Manufacturer: STMicroelectronics. Win Source Part Number: 1187113-IRF640. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

  • Packing Method: Tube; Tube
  • Package Type: TO-220; SOT3
  • Polarity: N-Channel; N-Channel
  • TJ: 150
2SC3503E-RA [2SC3503E-RA from onsemi]
from Rochester Electronics

Power Bipolar Transistor, 0.1A, 300V, NPN, TO-126, 3 Pin [See More]

  • Packing Method: Tube; Tube
  • Polarity: NPN
  • Transistor Type: Bipolar RF
  • Package Type: TO-126
Electronic Wholesale - SPD04N60C3 -- 1257868-SPD04N60C3 [SPD04N60C3 from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1257868-SPD04N60C3. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Family Name: SPD04N60C3. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO252-3. Drive Voltage (Max Rds... [See More]

  • Packing Method: Tube; Tube
  • Package Type: SOT3; TO-252 (DPAK)
  • Polarity: N-Channel; N-Channel
  • TJ: -55 to 150
2SC5200RTU [2SC5200RTU from onsemi]
from Rochester Electronics

NPN Epitaxial Silicon Transistor [See More]

  • Packing Method: Tube; Tube
  • Package Type: TO-264-3
  • Polarity: NPN
FETs - Single - FCPF380N65FL1 -- 814192-FCPF380N65FL1 [FCPF380N65FL1 from onsemi]
from Win Source Electronics

Manufacturer: ON Semiconductor. Win Source Part Number: 814192-FCPF380N65FL1. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650V. Supplier Device Package: TO-220F. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

  • Packing Method: Tube; Tube
  • Package Type: TO-220; SOT3
  • Polarity: N-Channel
  • TJ: -55 to 150
BDV64BG [BDV64BG from onsemi]
from Rochester Electronics

Power Bipolar Transistor, 10A, 100V, PNP, TO-247, Plastic/Epoxy, 3 Pin [See More]

  • Packing Method: Tube; Tube
  • Polarity: PNP
  • Transistor Type: Bipolar RF
  • Package Type: TO-247; TO-247
FETs - Single - IPI04N03LA -- 724023-IPI04N03LA [IPI04N03LA from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 724023-IPI04N03LA. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO262-3. Drive Voltage (Max Rds On, Min Rds On):... [See More]

  • Packing Method: Tube; Tube
  • Package Type: SOT3
  • Polarity: N-Channel; N-Channel
  • TJ: -55 to 175
BUJ303AX,127 [BUJ303AX,127 from WeEn Semiconductors]
from Rochester Electronics

Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin [See More]

  • Packing Method: Tube; Tube
  • Polarity: NPN
  • Transistor Type: Bipolar RF
  • Package Type: SOT186A
FETs - Single - IPU04N03LA -- 1186460-IPU04N03LA [IPU04N03LA from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1186460-IPU04N03LA. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: P-TO251-3-1. Drive Voltage (Max Rds On, Min Rds... [See More]

  • Packing Method: Tube; Tube
  • Package Type: SOT3
  • Polarity: N-Channel; N-Channel
  • TJ: -55 to 175
BUT11AFTU [BUT11AFTU from onsemi]
from Rochester Electronics

10 Amp, 450 V NPN Power Bipolar Transistor [See More]

  • Packing Method: Tube; Tube
  • Polarity: NPN
  • Transistor Type: Bipolar RF
  • Package Type: TO-220; TO-220-3 FullPak
FETs - Single - IRF135B203 -- 718696-IRF135B203 [IRF135B203 from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 718696-IRF135B203. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO220-3. Drive Voltage (Max Rds On, Min Rds On):... [See More]

  • Packing Method: Tube; Tube
  • Package Type: TO-220; SOT3
  • Polarity: N-Channel; N-Channel
  • TJ: -55 to 175
CA3082F/3
from Rochester Electronics

General Purpose High Current NPN Transistor Arrays, 7-Element, Common-Emitter [See More]

  • Packing Method: Tube; Tube
  • Package Type: CERDIP16
  • Polarity: NPN
FETs - Single - IRF530 -- 808865-IRF530 [IRF530 from STMicroelectronics]
from Win Source Electronics

Manufacturer: STMicroelectronics. Win Source Part Number: 808865-IRF530. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 100V. Part Status: Obsolete (End Of Life). Supplier Device Package: TO-220AB. Drive Voltage... [See More]

  • Packing Method: Tube; Tube
  • Package Type: TO-220; SOT3
  • Polarity: N-Channel
  • TJ: -55 to 175
CA3083M
from Rochester Electronics

General Purpose High Current NPN Transistor Arrays, 5-Element [See More]

  • Packing Method: Tube; Tube
  • Package Type: SOIC16
  • Polarity: NPN
FETs - Single - IRF540S -- 1187058-IRF540S [IRF540S from Vishay Intertechnology, Inc.]
from Win Source Electronics

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187058-IRF540S. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK (TO-263). Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

  • Packing Method: Tube; Tube
  • Package Type: TO-263; SOT3
  • Polarity: N-Channel; N-Channel
  • TJ: -55 to 175
CA3083R4339
from Rochester Electronics

General Purpose High Current NPN Transistor Arrays, 5-Element [See More]

  • Packing Method: Tube; Tube
  • Package Type: PDIP16
  • Polarity: NPN
FETs - Single - IRF620 -- 1187082-IRF620 [IRF620 from Vishay Intertechnology, Inc.]
from Win Source Electronics

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187082-IRF620. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

  • Packing Method: Tube; Tube
  • Package Type: TO-220; SOT3
  • Polarity: N-Channel; N-Channel
  • TJ: -65 to 150
D45H11G [D45H11G from onsemi]
from Rochester Electronics

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin [See More]

  • Packing Method: Tube; Tube
  • Polarity: PNP
  • Transistor Type: Bipolar RF
  • Package Type: TO-220; TO-220
FETs - Single - IRF630S -- 1187103-IRF630S [IRF630S from Vishay Intertechnology, Inc.]
from Win Source Electronics

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187103-IRF630S. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK (TO-263). Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

  • Packing Method: Tube; Tube
  • Package Type: TO-263; SOT3
  • Polarity: N-Channel; N-Channel
  • TJ: -55 to 150
FJP2145TU [FJP2145TU from onsemi]
from Rochester Electronics

ESBC Rated NPN Power Transistor [See More]

  • Packing Method: Tube; Tube
  • Package Type: TO-220; TO-220-3
  • Polarity: NPN
FETs - Single - IRF640S -- 1187117-IRF640S [IRF640S from Vishay Intertechnology, Inc.]
from Win Source Electronics

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187117-IRF640S. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK. Drive Voltage (Max Rds On, Min Rds On): 10V. Status:... [See More]

  • Packing Method: Tube; Tube
  • Package Type: TO-263; SOT3
  • Polarity: N-Channel; N-Channel
  • TJ: -55 to 150
KSH44H11ITU [KSH44H11ITU from onsemi]
from Rochester Electronics

NPN Epitaxial Silicon Transistor [See More]

  • Packing Method: Tube; Tube
  • Package Type: IPAK-3 / DPAK-3 STRAIGHT LEAD
  • Polarity: NPN
FETs - Single - IRFD010 -- 1187553-IRFD010 [IRFD010 from Vishay Intertechnology, Inc.]
from Win Source Electronics

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187553-IRFD010. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: 4-DIP, Hexdip, HVMDIP. Drive Voltage (Max Rds On, Min Rds... [See More]

  • Packing Method: Tube; Tube
  • Package Type: SOT3
  • Polarity: N-Channel; N-Channel
  • TJ: -55 to 150
KSH45H11ITU [KSH45H11ITU from onsemi]
from Rochester Electronics

PNP Epitaxial Silicon Transistor [See More]

  • Packing Method: Tube; Tube
  • Package Type: IPAK-3 / DPAK-3 STRAIGHT LEAD
  • Polarity: PNP
FETs - Single - IRFD113 -- 1187559-IRFD113 [IRFD113 from Vishay Intertechnology, Inc.]
from Win Source Electronics

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187559-IRFD113. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: 4-DIP, Hexdip, HVMDIP. Drive Voltage (Max Rds On, Min Rds... [See More]

  • Packing Method: Tube; Tube
  • Package Type: SOT3
  • Polarity: N-Channel; N-Channel
  • TJ: -55 to 150
LM195H/883 [LM195H/883 from Texas Instruments]
from Rochester Electronics

Power Bipolar Transistor, 42V V(BR)CEO, 3-Element, NPN, Silicon, TO-5, Metal, 3 Pin [See More]

  • Packing Method: Tube; Tube
  • Polarity: NPN
  • Transistor Type: Bipolar RF
  • Package Type: TO-CAN-3
FETs - Single - IRFD9010 -- 1187568-IRFD9010 [IRFD9010 from Vishay Intertechnology, Inc.]
from Win Source Electronics

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187568-IRFD9010. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: 4-DIP, Hexdip, HVMDIP. Drive Voltage (Max Rds On, Min Rds... [See More]

  • Packing Method: Tube; Tube
  • Package Type: SOT3
  • Polarity: P-Channel; P-Channel
  • TJ: -55 to 150
MRF101AN [MRF101AN from NXP Semiconductors]
from Rochester Electronics

RF Power Field-Effect Transistor [See More]

  • Packing Method: Tube; Tube
  • Package Type: SIL3
FETs - Single - IRFD9020 -- 1187570-IRFD9020 [IRFD9020 from Vishay Intertechnology, Inc.]
from Win Source Electronics

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187570-IRFD9020. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: 4-DIP, Hexdip, HVMDIP. Drive Voltage (Max Rds On, Min Rds... [See More]

  • Packing Method: Tube; Tube
  • Package Type: SOT3
  • Polarity: P-Channel; P-Channel
  • TJ: -55 to 175
MUN5113DW1T1 [MUN5113DW1T1 from onsemi]
from Rochester Electronics

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon [See More]

  • Packing Method: Tube; Tube
  • Polarity: PNP
  • Transistor Type: Bipolar RF; MOSFET RF
  • Package Type: SC-70-6
FETs - Single - IRFR9024 -- 1187961-IRFR9024 [IRFR9024 from Vishay Intertechnology, Inc.]
from Win Source Electronics

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187961-IRFR9024. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D-Pak. Drive Voltage (Max Rds On, Min Rds On): 10V. Status:... [See More]

  • Packing Method: Tube; Tube
  • Package Type: SOT3; TO-252 (DPAK)
  • Polarity: P-Channel; P-Channel
  • TJ: -55 to 150
MX0912B251Y [MX0912B251Y from Ampleon]
from Rochester Electronics

NPN microwave power transistor [See More]

  • Packing Method: Tube; Tube
  • Package Type: SOT439A2
  • Polarity: NPN
FETs - Single - IRFZ20 -- 1188161-IRFZ20 [IRFZ20 from Vishay Intertechnology, Inc.]
from Win Source Electronics

Manufacturer: Vishay Siliconix. Win Source Part Number: 1188161-IRFZ20. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

  • Packing Method: Tube; Tube
  • Package Type: TO-220; SOT3
  • Polarity: N-Channel; N-Channel
  • TJ: -55 to 150
RZ1214B35YI [RZ1214B35YI from Ampleon]
from Rochester Electronics

NPN microwave power transistor [See More]

  • Packing Method: Tube; Tube
  • Package Type: SOT-44
  • Polarity: NPN
FETs - Single - IRFZ40 -- 1188182-IRFZ40 [IRFZ40 from Vishay Intertechnology, Inc.]
from Win Source Electronics

Manufacturer: Vishay Siliconix. Win Source Part Number: 1188182-IRFZ40. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

  • Packing Method: Tube; Tube
  • Package Type: TO-220; SOT3
  • Polarity: N-Channel; N-Channel
  • TJ: -55 to 175
SSM2212RZ
from Rochester Electronics

Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, MS-012AA [See More]

  • Packing Method: Tube; Tube
  • Polarity: NPN
  • Transistor Type: Bipolar RF; MOSFET RF
  • Package Type: SOIC8
FETs - Single - SPD07N60C3 -- 1257872-SPD07N60C3 [SPD07N60C3 from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1257872-SPD07N60C3. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Family Name: SPD07N60C3. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO252-3. Drive Voltage (Max Rds... [See More]

  • Packing Method: Tube; Tube
  • Package Type: SOT3; TO-252 (DPAK)
  • Polarity: N-Channel; N-Channel
  • TJ: -55 to 150
SSM2220PZ
from Rochester Electronics

Audio Dual Matched PNP Transistor [See More]

  • Packing Method: Tube; Tube
  • Package Type: PDIP8
  • Polarity: PNP
FETs - Single - SPP15P10P -- 1258062-SPP15P10P [SPP15P10P from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1258062-SPP15P10P. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO220-3. Drive Voltage (Max Rds On, Min Rds On):... [See More]

  • Packing Method: Tube; Tube
  • Package Type: TO-220; SOT3
  • Polarity: P-Channel; P-Channel
  • TJ: -55 to 175
TIP33A [TIP33A from Motorola Solutions, Inc.]
from Rochester Electronics

Power Bipolar Transistor, 10A, 60V, NPN [See More]

  • Packing Method: Tube; Tube
  • Polarity: NPN
  • Transistor Type: Bipolar RF
FETs - Single - SPP80N06S2-05 -- 1258134-SPP80N06S2-05 [SPP80N06S2-05 from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1258134-SPP80N06S2-05. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO220-3-1. Drive Voltage (Max Rds On, Min... [See More]

  • Packing Method: Tube; Tube
  • Package Type: TO-220; SOT3
  • Polarity: N-Channel; N-Channel
  • TJ: -55 to 175
FET RF 25V 870MHZ -- 761-PD84008-E [PD84008-E from STMicroelectronics]
from Utmel Electronic Limited

FET RF 25V 870MHZ [See More]

  • Packing Method: Tube; Tube
  • Number of units in IC: 1
  • Polarity: N-Channel; N-CHANNEL
  • TJ: -65 to 165
FET RF 40V 500MHZ PWRSO10 -- 761-PD55003-E [PD55003-E from STMicroelectronics]
from Utmel Electronic Limited

FET RF 40V 500MHZ PWRSO10 [See More]

  • Packing Method: Tube; Tube
  • Number of units in IC: 1
  • Polarity: N-Channel; N-CHANNEL
  • TJ: -65 to 165
FET RF 40V 870MHZ -- 761-PD85035S-E [PD85035S-E from STMicroelectronics]
from Utmel Electronic Limited

FET RF 40V 870MHZ [See More]

  • Packing Method: Tube; Tube
  • Number of units in IC: 1
  • Polarity: N-Channel; N-CHANNEL
  • TJ: -65 to 150
ON SEMICONDUCTOR - MJD2955G - RF TRANSISTOR, PNP, -60V 2MHZ D-PAK -- 598-MJD2955G [MJD2955G from onsemi]
from Utmel Electronic Limited

ON SEMICONDUCTOR - MJD2955G - RF TRANSISTOR, PNP, -60V 2MHZ D-PAK [See More]

  • Packing Method: Tube; Tube
  • Transistor Technology / Material: SILICON
  • Polarity: PNP; PNP
  • Number of units in IC: 1