N-Channel RF Transistors

JFET N-CH 25V 100MA TO92 [See More]

• Polarity: N-Channel; N-Channel
• Transistor Technology / Material: JFET

• Transistor Type: MOSFET RF; JFET
• Package Type: TO-92; TO-226-3, TO-92-3 Long Body

Radiation Hard Power Switch 60V/80A. Summary of Features. N-channel. Low RDS(on). Single Event Effect (SEE) hardened. LET 95, Range: 86 μm (Pb) VGS = -10V, VDS = 55V, approved VGS = -15V, VDS = 30V;. LET 62, Range: 73 μm (Xe) VGS = -20V, VDS = 60V, VGS = -25V, VDS = 30V approved. Total... [See More]

• Polarity: N-Channel; N

• Package Type: TO-257AA

RF Small Signal Field-Effect Transistor, Very High Frequency Band, N-Channel, Junction FET, TO-92 [See More]

• Polarity: N-Channel
• Package Type: TO-92; TO-92

• Transistor Type: MOSFET RF

Win Source Part Number: 987956-BUK7K5R6-30E,115. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: Automotive, AEC-Q101, TrenchMOS ™. Package: Bulk. Standard Package: 1. Mounting: SMD (SMT). FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain to... [See More]

• Polarity: N-Channel
• T_J: -55 to 175

• Package Type: SOT3
• Output Power: 64

RF MOSFET N-CH JFET 5V 3CP [See More]

• Polarity: N-Channel; N-Channel
• Transistor Technology / Material: JFET

• Transistor Type: MOSFET RF; JFET
• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3

Radiation Hard Power Switch 250V/12A. Summary of Features. Low RDS(on). Single Event Effect (SEE) hardened. LET 85, Range: 118 μm VGS = -10V, VDS = 250V, approved. LET 55; Range: 90 µm VGS = -15V, VDS = 250V, approved. Total Ionisation Dose (TID) hardened 100 kRad approved (Level R). [See More]

• Polarity: N-Channel; N

• Package Type: SMD-0.5

RF Small Signal Field-Effect Transistor, N-Channel MOSFET [See More]

• Polarity: N-Channel
• Package Type: MPAK4

• Transistor Type: MOSFET RF
• Packing Method: Tape Reel; Tape & Reel

Win Source Part Number: 1012044-TK110P10PL,RQ. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel. Standard Package: 2,500. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 100 V. [See More]

• Polarity: N-Channel
• T_J: 175

• Package Type: SOT3
• Output Power: ? to 75

FET RF 15V 200MHZ CP4 [See More]

• Polarity: N-Channel; N-Channel Dual Gate
• Transistor Technology / Material: MOSFET

• Transistor Type: MOSFET RF; MOSFET
• Package Type: TO-253-4, TO-253AA

Radiation Hard Power Switch 250V/54A. Summary of Features. Low RDS(on). Single Event Effect (SEE) hardened. LET 85, Range: 118 μm VGS = -10V, VDS = 250V, approved. LET 55; Range: 90 µm VGS = -15V, VDS = 250V, approved. Total Ionisation Dose (TID) hardened 100 kRad approved (Level R). [See More]

• Polarity: N-Channel; N

• Package Type: SMD-2

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET [See More]

• Polarity: N-Channel
• Package Type: SOT-343

• Transistor Type: MOSFET RF
• Packing Method: Tape Reel; Tape & Reel

Win Source Part Number: 1019254-TK16J60W,S1VE. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tube. Standard Package: 25. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current - Continuous Drain (Id) @ 25... [See More]

• Polarity: N-Channel
• T_J: 150

• Package Type: TO-3; SOT3
• Output Power: ? to 130

TRANS N-CH CMPAK-4 [See More]

• Polarity: N-Channel; N-Channel Dual Gate
• Transistor Technology / Material: MOSFET

• Transistor Type: MOSFET RF; MOSFET
• Package Type: SC-82A, SOT-343

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: HQFN24

Win Source Part Number: 1123029-FCPF1300N80ZYD. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® II. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 800 V. Current -... [See More]

• Polarity: N-Channel
• T_J: -55 to 150

• Package Type: TO-220; SOT3
• Output Power: ? to 24

MOSFET RF N-CH 1000V 30A T1 [See More]

• Polarity: N-Channel; N-Channel
• Transistor Technology / Material: MOSFET

• Transistor Type: MOSFET RF; MOSFET
• Package Type: T-1

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, N-Channel, Metal-oxide Semiconductor FET [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: FM2F

Win Source Part Number: 1214795-TK22A65X5,S5X. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. Current - Continuous Drain (Id) @ 25... [See More]

• Polarity: N-Channel
• T_J: 150

• Package Type: TO-220; SOT3
• Output Power: ? to 45

FET RF N-CH 500V 14A TO247 [See More]

• Polarity: N-Channel; N-Channel
• Transistor Technology / Material: MOSFET

• Transistor Type: MOSFET RF; MOSFET
• Package Type: TO-247; TO-247-3

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, N-Channel, Metal-oxide Semiconductor FET [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: FM4F

Manufacturer: NXP USA Inc. Win Source Part Number: 1324131-BUK7Y25-40B,115. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Packaging: Bulk. Standard Package: 1. Mounting: Surface Mount. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source... [See More]

• Polarity: N-Channel
• Packing Method: Bulk; Bulk

• Package Type: SOT3; SC-100, SOT-669
• T_J: -55 to 175

RF N-CHANNEL MOSFET [See More]

• Polarity: N-Channel; N-Channel
• Package Type: SOT143; TO-253-4, TO-253AA

• Transistor Type: MOSFET RF
• Power Gain: 23

RF Power Field-Effect Transistor, 1-Element, S Band, N-Channel, Metal-oxide Semiconductor FET [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: CFM4F

Win Source Part Number: 992770-NP90N06VDK-E1-AY. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 2,500. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to... [See More]

• Polarity: N-Channel
• T_J: 175

• Package Type: SOT3; TO-252 (DPAK)
• Output Power: ? to 147

RF MOSFET N-CH 5V SOT143-4 [See More]

• Polarity: N-Channel; N-Channel
• Transistor Technology / Material: MOSFET

• Transistor Type: MOSFET RF; MOSFET
• Package Type: SOT143; TO-253-4, TO-253AA

RF Power Field-Effect Transistor, 1-Element, S Band, N-Channel, Metal-oxide Semiconductor FET [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: CFM6F

Win Source Part Number: 1345672-IPI70R950CE. Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs. Series: CoolMOS ™. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 700 V. [See More]

• Polarity: N-Channel
• T_J: -40 to 150

• Package Type: SOT3
• Output Power: ? to 68

JFET N-CH 20V 25MA SOT23 [See More]

• Polarity: N-Channel; N-Channel
• Transistor Technology / Material: JFET

• Transistor Type: MOSFET RF; JFET
• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET [See More]

• Polarity: N-Channel
• Package Type: CP4

• Transistor Type: MOSFET RF

Win Source Part Number: 1349655-TK7R7P10PL,RQ. Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs. Package: Tape & Reel. Standard Package: 2,500. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 100 V. Power... [See More]

• Polarity: N-Channel
• T_J: 175

• Package Type: SOT3
• Output Power: ? to 93

MOSFET NCH DUAL GATE 20V SOT143B [See More]

• Polarity: N-Channel; N-Channel Dual Gate
• Transistor Technology / Material: MOSFET

• Transistor Type: MOSFET RF; MOSFET
• Package Type: SOT143; TO-253-4, TO-253AA

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET [See More]

• Polarity: N-Channel
• Package Type: DFP4

• Transistor Type: MOSFET RF
• Packing Method: Tape Reel; Tape & Reel

Win Source Part Number: 1352839-IPP024N06N3G. Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs. Temperature Range - Operating: -55 °C ~ 175 °C (TJ). ECCN: EAR99. Fake Threat In the Open Market: 33 pct. Mfr: Infineon Technologies. Series:... [See More]

• Polarity: N-Channel
• T_J: -55 to 175

• Package Type: SOT3
• Output Power: ? to 250

MOSFET N-CH 12V 30MA SOT343R [See More]

• Polarity: N-Channel; N-Channel Dual Gate
• Transistor Technology / Material: MOSFET

• Transistor Type: MOSFET RF; MOSFET
• Package Type: SC-82A, SOT-343

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET [See More]

• Polarity: N-Channel
• Packing Method: Tray

• Package Type: SOT502B

Win Source Part Number: 1083948-PBSM5240PFH,115. Category: Discrete Semiconductor Products >Transistors - Special Purpose. Package: Tape & Reel. Applications: General Purpose. Standard Package: 3,000. Mounting: SMD (SMT). Voltage - Rated: 40V PNP, 30V N-Channel. Transistor Type: PNP,... [See More]

• Polarity: PNP; N-Channel

• Package Type: SOT3

BLF175 - HF/VHF POWER VDMOS TRAN [See More]

• Polarity: N-Channel; N-Channel
• Transistor Technology / Material: MOSFET

• Transistor Type: MOSFET RF; MOSFET
• Package Type: SOT123; SOT-123A

RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET [See More]

• Polarity: N-Channel
• Packing Method: Tray

• Package Type: SOT502A

Win Source Part Number: 1338158-ALD910023SAL. Category: Discrete Semiconductor Products - Transistors - Special Purpose. Series: SAB ™. Package: Tube. Applications: Supercapacitor Auto Balancing. Standard Package: 50. Voltage - Rated: 10.6V. Transistor Type: 2 N-Channel (Dual). Mounting Type:... [See More]

• Polarity: N-Channel

• Package Type: SOT3

BLF278C - DUAL PUSH-PULL N-CHANN [See More]

• Polarity: N-Channel; 2 N-Channel (Dual) Common Source
• Transistor Technology / Material: MOSFET

• Transistor Type: MOSFET RF; MOSFET
• Package Type: SOT26; SOT-262A1

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET [See More]

• Polarity: N-Channel
• Packing Method: Tray

• Package Type: SOT538

Win Source Part Number: 1339064-ALD810019SCLI. Category: Discrete Semiconductor Products - Transistors - Special Purpose. Series: SAB ™. Package: Tube. Applications: Supercapacitor Auto Balancing. Standard Package: 25. Voltage - Rated: 10.6V. Transistor Type: 4 N-Channel. Mounting Type:... [See More]

• Polarity: N-Channel

• Package Type: SOT3

RF MOSFET N-CHANNEL DE275 [See More]

• Polarity: N-Channel; N-Channel
• Transistor Technology / Material: MOSFET

• Transistor Type: MOSFET RF; MOSFET
• Package Type: 6-SMD, Flat Lead Exposed Pad

RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET [See More]

• Polarity: N-Channel
• Packing Method: Tray

• Package Type: SOT467

Win Source Part Number: 1340622-ALD910025SAL. Category: Discrete Semiconductor Products - Transistors - Special Purpose. Series: SAB ™. Package: Tube. Applications: Supercapacitor Auto Balancing. Standard Package: 50. Voltage - Rated: 10.6V. Transistor Type: 2 N-Channel (Dual). Mounting Type:... [See More]

• Polarity: N-Channel

• Package Type: SOT3

RF MOSFET N-CHANNEL DE375 [See More]

• Polarity: N-Channel; N-Channel
• Transistor Technology / Material: MOSFET

• Transistor Type: MOSFET RF; MOSFET
• Package Type: 6-SMD, Flat Lead Exposed Pad

N-Channel Enhancement-Mode RF Power Lateral LDMOSFET [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: CFM2F

Win Source Part Number: 1340862-ALD810026SCL. Category: Discrete Semiconductor Products - Transistors - Special Purpose. Series: SAB ™. Package: Tube. Applications: Supercapacitor Auto Balancing. Standard Package: 50. Voltage - Rated: 10.6V. Transistor Type: 4 N-Channel. Mounting Type: Surface... [See More]

• Polarity: N-Channel

• Package Type: SOT3

RF MOSFET N-CH JFET 15V SOT23-3 [See More]

• Polarity: N-Channel; N-Channel
• Transistor Technology / Material: JFET

• Transistor Type: MOSFET RF; JFET
• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236AB [See More]

• Polarity: N-Channel
• Package Type: SOT23; SOT-23-XF

• Transistor Type: MOSFET RF
• Packing Method: Tape Reel; Tape & Reel

Manufacturer: EPC. Category: Discrete Semiconductor Products -Transistors FETs, MOSFETs -Single FETs, MOSFETs. Series: eGaN ®. Package: Tape & Reel (TR) Cut Tape (CT). Product Status: Active. FET Type: N-Channel. Technology: GaNFET (Gallium Nitride). Drain to Source Voltage (Vdss): 40 V. [See More]

• Polarity: N-Channel

• Package Type: SOT3

JFET N-CH 30V 15MA SOT23 [See More]

• Polarity: N-Channel; N-Channel
• Transistor Technology / Material: JFET

• Transistor Type: MOSFET RF; JFET
• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: HVQFN24

Manufacturer: Infineon Technologies. Win Source Part Number: 1186154-IPD50R399CP. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Family Name: IPD50R399CP. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO252-3. Drive... [See More]

• Polarity: N-Channel; N-Channel
• Packing Method: Tape Reel; Tape and Reel

• Package Type: SOT3; TO-252 (DPAK)
• T_J: -55 to 150

FET RF 65V 400MHZ 319B-02 [See More]

• Polarity: N-Channel; N-Channel
• Transistor Technology / Material: MOSFET

• Transistor Type: MOSFET RF; MOSFET
• Package Type: 319B-02

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET [See More]

• Polarity: N-Channel
• Packing Method: Bulk; Bulk

• Package Type: SOT-957

Manufacturer: Infineon Technologies. Win Source Part Number: 1186170-IPD60R950C6. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Family Name: IPD60R950C6. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO252-3. Drive Voltage (Max... [See More]

• Polarity: N-Channel; N-Channel
• Packing Method: Tape Reel; Reel

• Package Type: SOT3; TO-252 (DPAK)
• T_J: -55 to 150

FET RF 65V 400MHZ 211-07 [See More]

• Polarity: N-Channel; N-Channel
• Transistor Technology / Material: MOSFET

• Transistor Type: MOSFET RF; MOSFET
• Package Type: 211-07

Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: CFM2

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187054-IRF540. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Polarity: N-Channel; N-Channel
• Packing Method: Tube; Tube

• Package Type: TO-220; SOT3
• T_J: -55 to 175

FET RF 2CH 65V 175MHZ 375-04 [See More]

• Polarity: N-Channel; 2 N-Channel (Dual) Common Source
• Transistor Technology / Material: MOSFET

• Transistor Type: MOSFET RF; MOSFET
• Package Type: 375-04

RF Power Field-Effect Transistor, 2-Element, S Band, N-Channel MOSFET [See More]

• Polarity: N-Channel

• Package Type: FL16

Manufacturer: STMicroelectronics. Win Source Part Number: 1187113-IRF640. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Polarity: N-Channel; N-Channel
• Packing Method: Tube; Tube

• Package Type: TO-220; SOT3
• T_J: 150

FET RF 125V 150MHZ 211-11 [See More]

• Polarity: N-Channel; N-Channel
• Transistor Technology / Material: MOSFET

• Transistor Type: MOSFET RF; MOSFET
• Package Type: 211-11, Style 2

RF Power Field-Effect Transistor, N-Channel MOSFET [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: SMD4

Manufacturer: Infineon Technologies. Win Source Part Number: 1257868-SPD04N60C3. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Family Name: SPD04N60C3. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO252-3. Drive Voltage (Max Rds... [See More]

• Polarity: N-Channel; N-Channel
• Packing Method: Tube; Tube

• Package Type: SOT3; TO-252 (DPAK)
• T_J: -55 to 150

FET RF N-CH 150W 50V 175MHZ [See More]

• Polarity: N-Channel; N-Channel
• Transistor Technology / Material: MOSFET

• Transistor Type: MOSFET RF; MOSFET
• Power Gain: 13

RF Small Signal Field-Effect Transistor, N-Channel MOSFET [See More]

• Polarity: N-Channel
• Package Type: SC-70-6

• Transistor Type: MOSFET RF
• Packing Method: Tape Reel; Tape & Reel

Manufacturer: ON Semiconductor. Win Source Part Number: 1124251-2N7002VA. Packaging: Reel. Mounting Style: SMD. FET Feature: Logic Level Gate. Transistor Polarity: 2 N-Channel (Dual). Categories: Discrete Semiconductor Products. Supplier Device Package: SOT-563F. Temperature Range - Operating: -55... [See More]

• Polarity: N-Channel; 2 N-Channel (Dual)
• Packing Method: Tape Reel; Reel

• Package Type: SOT3
• T_J: -55 to 150

FET RF 2CH 125V 175MHZ 375-04 [See More]

• Polarity: N-Channel; 2 N-Channel (Dual) Common Source
• Transistor Technology / Material: MOSFET

• Transistor Type: MOSFET RF; MOSFET
• Package Type: 375-04

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1144846-AO6804. Packaging: Reel. Mounting Style: SMD. FET Feature: Logic Level Gate. Transistor Polarity: 2 N-Channel (Dual) Common Drain. Categories: Discrete Semiconductor Products. Supplier Device Package: 6-TSOP. Status:... [See More]

• Polarity: N-Channel; 2 N-Channel (Dual) Common Drain
• Packing Method: Tape Reel; Reel

• Package Type: SOT3
• T_J: -55 to 150

FET RF 125V 80MHZ 368-03 1=1PC [See More]

• Polarity: N-Channel; N-Channel
• Transistor Technology / Material: MOSFET

• Transistor Type: MOSFET RF; MOSFET
• Package Type: 368-03

Manufacturer: Diodes Incorporated. Win Source Part Number: 803017-DMN5L06DMKQ-7. Packaging: Reel. Mounting Style: SMD. FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain to Source Voltage (Vdss): 50V. Power - Max: 400mW. Supplier Device Package: SOT-26. Temperature Range - Operating: -65... [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Reel

• Package Type: SOT3; SOT23; SOT26
• T_J: -65 to 150

FET RF 65V 500MHZ 305A-01 [See More]

• Polarity: N-Channel; N-Channel
• Transistor Technology / Material: MOSFET

• Transistor Type: MOSFET RF; MOSFET
• Package Type: 305A-01

Karl Kruse  is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]

• Polarity: N-Channel

FET RF 100V 1.09GHZ PLD-1.5 [See More]

• Polarity: N-Channel; N-CHANNEL
• Packing Method: Tape Reel; Tape & Reel (TR)

• Transistor Technology / Material: SILICON
• Number of units in IC: 1

FET RF 25V 870MHZ [See More]

• Polarity: N-Channel; N-CHANNEL
• Number of units in IC: 1

• Packing Method: Tube; Tube
• T_J: -65 to 165

FET RF 2CH 110V 130MHZ NI-1230 [See More]

• Polarity: N-Channel; N-CHANNEL
• Power Gain: 26

• Packing Method: Tape Reel; Tape & Reel (TR)
• Output Power: 1000

FET RF 40V 500MHZ PWRSO-10 [See More]

• Polarity: N-Channel; N-CHANNEL
• Number of units in IC: 1

• Packing Method: Tape Reel; Tape & Reel (TR)
• T_J: -65 to 165

FET RF 40V 500MHZ PWRSO10 [See More]

• Polarity: N-Channel; N-CHANNEL
• Number of units in IC: 1

• Packing Method: Tube; Tube
• T_J: -65 to 165

FET RF 65V 945MHZ M250 [See More]

• Polarity: N-Channel; N-CHANNEL
• Number of units in IC: 1

• Packing Method: Bulk; Bulk
• T_J: -65 to 200

Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 3 W, 12.5 V [See More]

• Polarity: N-Channel
• Power Gain: 15

• Packing Method: Tape Reel; Digi-Reel?
• Output Power: 3

RF FET HEMT 150V 11.5DB SOT467C [See More]

• Polarity: N-Channel; N-CHANNEL
• Packing Method: Tape Reel; Tray

• Transistor Technology / Material: GALLIUM NITRIDE
• Number of units in IC: 1

RF FET HEMT 150V 14DB SOT1228B [See More]

• Polarity: N-Channel; N-CHANNEL
• Packing Method: Tape Reel; Tray

• Transistor Technology / Material: GALLIUM NITRIDE
• Number of units in IC: 2

RF FET LDMOS 100V 15.5DB SOT539A [See More]

• Polarity: N-Channel; N-CHANNEL
• Packing Method: Tape Reel; Tray

• Transistor Technology / Material: SILICON
• Number of units in IC: 2

RF FET LDMOS 100V 17DB SOT1135A [See More]

• Polarity: N-Channel; N-CHANNEL
• Packing Method: Tape Reel; Tray

• Transistor Technology / Material: SILICON
• Number of units in IC: 1

RF FET LDMOS 110V 20.8DB SOT539B [See More]

• Polarity: N-Channel; N-CHANNEL
• Packing Method: Tape Reel; Tray

• Transistor Technology / Material: SILICON
• Number of units in IC: 2

RF FET LDMOS 60V 11DB SOT502A [See More]

• Polarity: N-Channel; N-CHANNEL
• Packing Method: Tape Reel; Tray

• Transistor Technology / Material: SILICON
• Number of units in IC: 1

RF FET LDMOS 65V 14DB SOT12521 [See More]

• Polarity: N-Channel; N-CHANNEL
• Packing Method: Tape Reel; Tape & Reel (TR)

• Transistor Technology / Material: SILICON
• Number of units in IC: 2

RF FET LDMOS 65V 17DB SOT502B [See More]

• Polarity: N-Channel; N-CHANNEL
• Packing Method: Tape Reel; Tape & Reel (TR)

• Transistor Technology / Material: SILICON
• Number of units in IC: 1

RF FET LDMOS 65V 18DB SOT1120B [See More]

• Polarity: N-Channel; N-CHANNEL
• Packing Method: Tape Reel; Tape & Reel (TR)

• Transistor Technology / Material: SILICON
• Number of units in IC: 2

RF FET LDMOS 65V 18DB SOT1121A [See More]

• Polarity: N-Channel; N-CHANNEL
• Packing Method: Tape Reel; Tray

• Transistor Technology / Material: SILICON
• Number of units in IC: 2

RF FET LDMOS 65V 18DB SOT1244C [See More]

• Polarity: N-Channel; N-CHANNEL
• Packing Method: Tape Reel; Tape & Reel (TR)

• Transistor Technology / Material: SILICON
• Number of units in IC: 1

RF FET LDMOS 65V 19DB SOT1242C [See More]

• Polarity: N-Channel; N-CHANNEL
• Packing Method: Tape Reel; Tape & Reel (TR)

• Transistor Technology / Material: SILICON
• Number of units in IC: 2

RF JFET Transistors Super Lo Noise HJFET [See More]

• Polarity: N-Channel; N-CHANNEL
• Number of units in IC: 1

• Packing Method: Tape Reel; Tape & Reel (TR)
• T_J: -65 to 125

RF MOSFET Transistors HV8 2.6GHZ 80W NI780S-4 [See More]

• Polarity: N-Channel; N-CHANNEL
• Transistor Technology / Material: SILICON

• Transistor Type: MOSFET RF
• Packing Method: Tape Reel; Tape & Reel (TR)

RF MOSFET Transistors HV8 300W 50V NI1230S [See More]

• Polarity: N-Channel; N-CHANNEL
• Transistor Technology / Material: SILICON

• Transistor Type: MOSFET RF
• Packing Method: Tape Reel; Tape & Reel (TR)

RF MOSFET Transistors VHV6 500W 50V NI780H [See More]

• Polarity: N-Channel; N-CHANNEL
• Transistor Technology / Material: SILICON

• Transistor Type: MOSFET RF
• Packing Method: Tape Reel; Tape & Reel (TR)

Trans RF MOSFET N-CH 110V 3-Pin TO-270 T/R [See More]

• Polarity: N-Channel; N-CHANNEL
• Transistor Technology / Material: SILICON

• Transistor Type: MOSFET RF
• Packing Method: Tape Reel; Tape & Reel (TR)

Trans RF MOSFET N-CH 110V 3-Pin TO-272 T/R [See More]

• Polarity: N-Channel; N-CHANNEL
• Transistor Technology / Material: SILICON

• Transistor Type: MOSFET RF
• Packing Method: Tape Reel; Tape & Reel (TR)