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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power
- Frequency Range: 1,800 to 1,910 MHz
- Maximum Gain: 27 dB
- Output Power( P1dB): 32 dBm
- Minimum Operating Voltage: 5 volts
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Supplier: Radwell International
Description: AUDIO AMPLIFIER, CLASS AB, 2.5W, DIP-8; OUTPUT POWER:2.5W; AMPLIFIER CLASS:AB; NO. OF CHANNELS:1 CHANNEL; SUPPLY VOLTAGE RANGE:10V TO 22V; AMPLIFIER CASE STYLE:DIP; NO. OF PINS:8PINS; LOAD IMPEDANCE:8OHM; OPERATING TEMPERATURE ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL
- Features: Audio Amplifiers
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Description: Features Circuitry: Class B Linear Input Power: 120V AC 60Hz or 230V AC 50Hz Input Signal: 0-2V rms. into 600 ohm load (50 ohm, 75 ohm optional) Frequency Response: 10Hz to 1MHz Output Volts: 0 – 25V rms. (inquire about available output transformers) Output Power: 50W, 250W, 500W and
- Frequency Range: 0.00001 to 1 MHz
- Output Power( P1dB): 53.979400086720375 dBm
- Minimum Operating Voltage: 115 volts
- Maximum Operating Voltage: 230 volts
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Supplier: AR Modular RF
Description: The Model KAW1040 is a general-purpose, wideband RF power amplifier for signals in the 1 MHz to 512 MHz frequency range. No tuning, band switching, or adjustments of any kind are required to operate this unit. Power output is in excess of 20 Watts into a 50-Ohm load.
- Frequency Range: 1 to 512 MHz
- Minimum Gain: 43 dB
- Output Power( P1dB): 43.01029995663981 dBm
- Gain Flatness: 2 dB
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: WIDE BAND LOW POWER AMPLIFIER, 4 / RF Amplifier IC Product overview: BGU7003W from NXP Semiconductors is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and
- Features: Other
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Supplier: Richardson RFPD
Description: NewEdge Signal Solutions ETX115 is a 2W Power Amplifier module delivering high gain, high power across a wide RF transmit bandwidth. This 2W compact module can be used for a wide range of applications including LTE Signals for use in tactical communication, test and
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Supplier: MACOM
Description: measurement and communication systems. Many of the power amplifiers include an on-chip temperature-compensated detector. Power amplifiers offer power up to 15W of power and are offered in a variety of package types for different applications.
- Frequency Range: 0 to 86,000 MHz
- Minimum Gain: 12 dB
- Maximum Gain: 30 dB
- Output Power( P1dB): 25 to 39 dBm
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Supplier: Broadcom Inc.
Description: The AMMC-6408 MMIC is a broadband 1W power amplifier in a surface mount package. It is designed for use in transmitters that operate in various frequency bands between 6GHz and 18GHz.
- Frequency Range: 6,000 to 18,000 MHz
- Minimum Gain: 16 dB
- Maximum Gain: 19 dB
- Output Power( P1dB): 25.999999999999996 to 29.000000000000004 dBm
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Supplier: Broadcom Inc.
Description: The AMMC-6442 is a 1W power amplifier MMIC die for use in transmitters that operate at frequencies between 37GHz and 40GHz.
- Frequency Range: 37,000 to 40,000 MHz
- Minimum Gain: 20 dB
- Maximum Gain: 23 dB
- Output Intercept Point (IP3): 37 dBm
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Supplier: Broadcom Inc.
Description: The Avago AMMC-6425 MMIC is a broadband 1W power amplifier designed for use in transmitters that operate in various frequency bands between 18 GHz and 28 GHz. This MMIC optimized for linear operation with an output third order intercept point (OIP3) of 38dBm.
- Frequency Range: 18,000 to 28,000 MHz
- Minimum Gain: 20 dB
- Maximum Gain: 20 dB
- Output Power( P1dB): 30 dBm
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Supplier: ValueTronics International, Inc.
Description: The 1W1000 is a 1 GHz 1 Watt RF Amplifier from Amplifier Research. Amplify RF and Microwave signals to measure, test, and design circuits. Applications include radio communications, cellphones, EMI testing, and much more. Additional Features: 100 kHz to 100 MHz
- Frequency Range: 1,000 MHz
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Supplier: APITech
Description: API Technologies' line of Gallium Nitride (GaN) Power Amplifiers utilize pulsed, solid state power amplifier technology and include designs that operate with output power levels up to 1,000 watts and frequencies to 18 GHz. These power amplifiers serve
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Supplier: Northrop Grumman Corporation
Description: Limited Samples NEW APN237 GaN Power Amplifier 13.5-15.5 13 40.5 44.5 Die Limited Samples NEW APN149 GaN HEMT High Power Amplifier 18-23 20 36 38 Die Limited Samples APN180 GaN HEMT High Power Amplifier 27-31 21 37 39 Die Pre-Production APN180FP Packaged GaN
- Frequency Range: 10,000 to 46,000 MHz
- Minimum Gain: 13 dB
- Maximum Gain: 25.5 dB
- Output Power( P1dB): 34 to 40.499999999999986 dBm
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Supplier: Custom MMIC
Description: The CMD262 is a 5 W GaN MMIC power amplifier die ideally suited for Ka-band communications systems where high power and high linearity are needed. The device delivers greater than 26 dB of gain with a corresponding output 1 dB compression point of +37.5 dBm and a saturated
- Frequency Range: 26,000 to 28,000 MHz
- Minimum Gain: 26 dB
- Maximum Gain: 26 dB
- Output Power( P1dB): 37.5 dBm
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Supplier: DigiKey
Description: IC RF AMP UHF VHF 5MHZ-500MHZ
- Frequency Range: 5 to 500 MHz
- Minimum Gain: 32 dB
- Maximum Gain: 32 dB
- Output Power( P1dB): 33 dBm
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Supplier: APITech
Description: Wide bandwidth and high efficiency are not the only features offered in our full line of high power amplifiers. Utilizing both in-house chip and wire (hybrid), thin film, and SMT technology, our power amplifiers draw from a wide range of leading edge semiconductors.
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Supplier: Qorvo
Description: Qorvo's QPA0812 is a packaged, high performance power amplifier fabricated on Qorvo's production QPHT15 (0.15um) pHEMT process. Covering 8.5 - 10.5 GHz, the QPA0812 provides 1 W of saturated output power and 24 dB of large-signal gain while achieving 48% power-added
- Frequency Range: 8,500 to 10,500 MHz
- Minimum Gain: 34.4 dB
- Maximum Gain: 34.4 dB
- Minimum Operating Voltage: 6 volts
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Supplier: Broadcom Inc.
Description: The AMMP-6442 MMIC is a 1W linear power amplifier in a surface mount package designed for use in transmitters that operate at frequencies between 37GHz and 40GHz.
- Frequency Range: 37,000 to 40,000 MHz
- Minimum Gain: 20 dB
- Maximum Gain: 23 dB
- Output Power( P1dB): 30 dBm
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Description: PIDSO's high efficiency linear power amplifier CRD.002-00A is ideally suited for rugged COFDM Video transmission applications in high PAPR scenarios. The high-efficiency linear power amplifier is built for harsh environments and provides 30dB of gain with a P1dB output of
- Package Type: Connectorized
- Amplifier Type: Power Amplifier
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Description: WIDE BAND LOW POWER AMPLIFIER, 4
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Supplier: NuWaves Ltd.
Description: The NuPower™ 12D05A is a small, highly efficient, connectorized solid state power amplifier that delivers up to 35 watts of RF power from 1700 to 2400 MHz to extend the operational range of data links and transmitters. The NuPower 12D05A accepts a nominal 0 dBm (1 mW)
- Frequency Range: 1,700 to 2,400 MHz
- Minimum Gain: 45 dB
- Maximum Gain: 45 dB
- Output Power( P1dB): 45.44068044350276 dBm
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Supplier: QuinStar Technology, Inc.
Description: QuinStar Technology’s series QPN power amplifiers utilize advanced Millimeter wave Monolithic Integrated Circuits (MMICs) and discrete devices for state-of-the-art power performance up to 4 GHz bandwidth in the 18-95 GHz frequency range. The standard amplifier housing
- Frequency Range: 18,000 to 95,000 MHz
- Minimum Gain: 10 dB
- Maximum Gain: 50 dB
- Output Power( P1dB): 21.00000000000001 to 38 dBm
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Supplier: Win Source Electronics
Description: Manufacturer: AMIS Category: RF and Wireless>RF Amplifiers Packaging: Bulk Part Status: Obsolete Resistance (Ohms): 45k Tolerance: ±20% Power (Watts): 30 W Composition: Wirewound Features: Bootstrap Circuit, Diode Emulation Package / Case: 8-SMD, No Lead
- Features: Other
- Applications: Terrestrial RF/Microwave Systems
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: options, lifecycle status, and procurement availability. Key searchable attributes include 18GHz, 1W. Search-friendly keywords include Rf Amplifier, RF Amplifiers, electronic component, datasheet, replacement part, 18GHz, 1W. This listing supports clearer
- Supply Voltage (VS): 6 volts
- Features: Other
- Standards: RoHS Compliant
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65170-21 is being discontinued and is not recommended for new designs. The suggested replacement is SKY66295-21 Skyworks SKY65170-21 is a fully-matched, 0.5 W Power Amplifier (PA) with high efficiency, designed for use in the 860 to 960 MHz band. The device is
- Frequency Range: 860 to 960 MHz
- Minimum Gain: 32 dB
- Maximum Gain: 32 dB
- Output Power( P1dB): 18 dBm
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Supplier: Skyworks Solutions, Inc.
Description: 1 GHz Power Doubler Hybrid Amplifier
- Noise Figure: 7.5 dB
- Nominal Operating Current: 0.43 amps
- Amplifier Type: Power Amplifier
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Supplier: Texas Instruments
Description: 1.25 Watt Fully Differential Audio Power Amplifier With RF Suppression and Shutdown 8-WSON
- Features: Audio Amplifiers
- RoHS Compliant: RoHS Compliant
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Supplier: Skyworks Solutions, Inc.
Description: Multiband/Multimode Power Amplifier Module GSM850 GSM900 DCS1800 PCS1900 WCDMA B1 WCDMA B2 WCDMA B3 WCDMA B4 WCDMA B5 WCDMA B6 WCDMA B8 WCDMA B10
- Frequency Range: 824 to 1,980 MHz
- Features: Other
- Amplifier Type: Power Amplifier
- Package Type: Surface Mount Technology (SMT)
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Supplier: Accuris
Description: ELECTRON TUBE, PUSH-PULL R-F BEAM POWER AMPLIFIER TYPE-6907
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Supplier: Skyworks Solutions, Inc.
Description: device is manufactured using an advanced InGaP HBT MMIC technology offering state-of-theart reliability, temperature stability, and ruggedness. The self-contained 7 mm x 7 mm x 1.3 mm surface mount package incorporates RF matching networks optimized for output power, efficiency, and
- Frequency Range: 1,880 to 1,930 MHz
- Minimum Gain: 30 dB
- Maximum Gain: 30 dB
- Output Power( P1dB): 27 dBm
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Supplier: Accuris
Description: ELECTRON TUBE, TWIN BEAM, RF AND AF POWER AMPLIFIER JAN-815
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Supplier: Qorvo
Description: Qorvo's QPA0106 is a wideband power amplifier fabricated using Qorvo’s QGaN25 0.25 um GaN on SiC production process. Covering 1 - 6 GHz, the QPA0106 provides 42.7 dBm of saturated output power. The QPA0106 is 100% DC and RF tested to ensure compliance to electrical
- Frequency Range: 1,000 to 6,000 MHz
- Minimum Gain: 33.7 dB
- Maximum Gain: 33.7 dB
- Minimum Operating Voltage: 22 volts
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Supplier: Amp-Line Corp.
Description: Wideband AC power amplifier: Broadband, Linear, 5 Hz - 1M Hz, 0-28 V rms. 50 watts. DC-coupled option and optional output transformer available to obtain different output voltage ranges in audio, ultrasonic and RF frequencies.
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-pull amplifiers, and RF power amplifiers. Power amplifiers are typically found in the final output stages of a circuit. There are five classes of power amplifiers: Class A, B, AB, C, and D. Let’s take a look at the characteristics of each. Class A power amplifiers’ (read more)
Browse RF Amplifiers Datasheets for ASAP Semiconductor LLC -
experienced in the design and development of high power amplifier modules and systems for C-UAS and EW. UAS represent a rapidly growing, low-cost, high-reward surveillance and attack threat to military and civilian personnel and infrastructure (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Qorvo's QPA0023D is a high-performance driver amplifier fabricated on Qorvo's production 0.15 um pHEMT process (QPHT15). Covering 6 – 18 GHz, the QPA0023D provides 13.5 dB small signal gain and 30 dBm P1dB with a saturated power of 32 dBm. In addition, the device has low IMD3 level of (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
controlled RF power amplifier ideal for ISM band and industrial wireless communication. With excellent small-signal gain of 32 dB and superior noise performance, it supports reliable mid-power amplification with flexible output control (read more)
Browse RF Amplifiers Datasheets for Win Source Electronics -
Package At Reference: 6 V / 70 mA / 5 GHz: - Gain: 13.5 dB - OIP3: 30 dBm - OP1dB: 16.5 dBm - Evaluation Board Noise Figure: 4.2 dB APPLICATIONS - Microwave Backhaul - C-Band Amplifiers - X-Band Amplifiers - Instrumentation (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Qorvo's QPA0813 is a packaged, high performance driver amplifier fabricated on Qorvo's production 0.15 um GaAs pHEMT process (QPHT15). Covering 8?-?11 GHz, the QPA0813 provides 0.7 W of saturated output power with 50% power-added efficiency. The device has an Enable / Disable function for fast (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
45 MHz - 1794 MHz, 34V, 18W, 23dB Gain High Output Power Doubler CATV Hybrid The QPA3316 is a Hybrid Power Doubler amplifier module,with 23 dB of gain. The part employs GaAs/GaN die and has an operational bandwidth from 45 MHz to 1794 MHz. It provides excellent (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
, or difficult to operate for small-scale dynamic testing applications. The VSA Series Mini Power Amplifiers are engineered specifically for compact precision vibration test systems, providing high (read more)
Browse Power Amplifiers Datasheets for ECON Technologies Co.,Ltd -
Qorvo's QPA4003 is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating from 26.5 to 29.5 GHz, it achieves 1.25 W linear power with lower than −33 dBc intermodulation distortion products and 29 dB small signal gain. Saturated output power is greater (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo
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An RF MEMS switch for 4G Front-Ends
[5] A. Fukuda, T. Furuta, H. Okazaki, and S. Narahashi, “A 0.9-5- GHz wide range 1W -Class reconfigurable power amplifier employing RF -MEMS switches,” 2006 IEEE MTT-S Int.
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A multi-mode multi-band reconfigurable power amplifier for low band GSM/UMTS handset applications
[1] A. Fukuda et al., "A 0.9-5-GHz Wide-Range 1W -Class Reconfigurable Power Amplifier Employing RF -MEMS Switches," in IEEE MTT-S Int. Dig., Jun. 2006, pp. 1859– 1862.
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Development of RF-MEMS ohmic contact switch for mobile handsets applications
[1] A. Fukuda, T. Furuta, H. Okazaki, and S. Narahashi, “A 0.9-5- GHz wide range 1W -Class reconfigurable power amplifier employing RF -MEMS switches,” IEEE MTT-S Int.
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A multi-band reconfigurable power amplifier for UMTS handset applications
[1] A. Fukuda, T. Furuta, H. Okazaki, and S. Narahashi, "A 0.9-5- GHz Wide-Range 1W -Class Reconfigurable Power Amplifier Employing RF -MEMS Switches," IEEE MTT-S Int.
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A high power and highly efficient multi-band power amplifier for mobile terminals
[8] A. Fukuda, T. Furuta, H. Okazaki, and S. Narahashi, “A 0.9-5-GHz wide range 1W -Class reconfigurable power amplifier employing RF -MEMS switches,” IEEE MTT-S Int.
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Multi-bit reconfigurable resonator using tapped transmission line and RF switches
A. Fukuda, T. Furuta, H. Okazaki and S. Narahashi, “A 0.9-5-GHz Wide-Range 1W -Class Reconfigurable Power Amplifier Employing RF -MEMS Switches,” IEEE International Microwave Symposium 2006 Digest, June 2006.
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A novel reconfigurable quad-band power amplifier with reconfigurable biasing network and LTCC substrates
[8] A. Fukuda, T. Furuta, H. Okazaki, and S. Narahashi, “A 0.9-5- GHz Wide Range 1W -Class Reconfigurable Power Amplifier Employing RF -MEMS switches,” 2006 IEEE MTT-S Int.
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MEMS-based reconfigurable RF front-end architecture for future band-free mobile terminals
A. Fukuda, T. Furuta, H. Okazaki, and S. Narahashi, “A 0.9-5-GHz wide-range 1W -class reconfigurable power amplifier employing RF - MEMS switches,” in 2006 IEEE MTT-S International Microwave Symposium Digest, pp. 1859–1862, June 2006.
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High-power ultrafast laser diodes
In order to obtain the highest output power from the amplifier , an RF current with - 1W of power was applied to the diode amplifier.
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Strategies for improved temporal and spectral resolution in in vivo oximetric imaging using time‐domain EPR
The RF amplifiers ZFL 1000LN, ZFL 1000VH; mixer ZFM-2H; filter PLP-15; switches ZYSW-2-50-DR, ZYSWA-2-50-DR, and ZFSWA-2-46; and power dividers ZFSC-3-4, PSCJ-2- 1W , and PSCQ-2-400 were obtained from …