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Supplier: Richardson RFPD
Description: 1 – 150 MHz, 1 Watt Power Amplifier
- Amplifier Type: Power Amplifier
- Frequency Range: 1 to 150 MHz
- Maximum Gain: 17 dB
- Maximum Operating Voltage: 14 volts
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Supplier: Richardson RFPD
Description: 88 – 110 MHz, 1 Watt Power Amplifier
- Amplifier Type: Power Amplifier
- Frequency Range: 88 to 110 MHz
- Maximum Gain: 17 dB
- Maximum Operating Voltage: 14 volts
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Supplier: Richardson RFPD
Description: 30 – 90 MHz, 1 Watt Power Amplifier
- Amplifier Type: Power Amplifier
- Frequency Range: 30 to 90 MHz
- Maximum Gain: 17 dB
- Maximum Operating Voltage: 16 volts
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Supplier: Richardson RFPD
Description: 20 – 600 MHz, 1 Watt Power Amplifier
- Amplifier Type: Power Amplifier
- Frequency Range: 20 to 600 MHz
- Maximum Gain: 17 dB
- Maximum Operating Voltage: 14 volts
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Supplier: Radwell International
Description: POWER AMPLIFIER MODULE, 800 MHZ, 100W. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Radwell International
Description: AUDIO AMPLIFIER, 0.7W, 1 CHANNEL(S), 1 FUNC, CMOS, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Radwell International
Description: AUDIO POWER AMPLIFIER, CLASS AB, 2.5W DIP-14; AMPLIFIER CLASS:AB; NO. OF CHANNELS:1 CHANNEL; OUTPUT POWER:2W; SUPPLY VOLTAGE RANGE:10V TO 22V; AMPLIFIER CASE STYLE:DIP; NO. OF PINS:14PINS; LOAD IMPEDANCE:8OHM; PRODUCT RANGE:- ROHS COMPLIANT:
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Supplier: DigiKey
Description: RF Amplifier IC
- Amplifier Type: Low Noise Amplifier, Power Amplifier
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Supplier: DigiKey
Description: RF Amplifier IC
- Amplifier Type: Low Noise Amplifier, Power Amplifier
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Supplier: Radwell International
Description: AUDIO AMPLIFIER, CLASS AB, 2.5W, DIP-8; OUTPUT POWER:2.5W; AMPLIFIER CLASS:AB; NO. OF CHANNELS:1 CHANNEL; SUPPLY VOLTAGE RANGE:10V TO 22V; AMPLIFIER CASE STYLE:DIP; NO. OF PINS:8PINS; LOAD IMPEDANCE:8OHM; OPERATING TEMPERATURE ROHS COMPLIANT: YES.
- Device Type: Audio Amplifiers
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Supplier: MACOM
Description: At MACOM we design, manufacture, and support a wide variety of power amplifiers for RF, microwave, and millimeter wave applications. Our Power amplifiers cover 40 KHz to 90 GHz operation for a wide range of both linear and saturated applications, including network
- Amplifier Type: Power Amplifier
- Applications: Terrestrial RF/Microwave Systems
- Frequency Range: 0.0 to 86000 MHz
- Maximum Gain: 30 dB
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Supplier: ValueTronics International, Inc.
Description: The 1W1000 is a 1 GHz 1 Watt RF Amplifier from Amplifier Research. Amplify RF and Microwave signals to measure, test, and design circuits. Applications include radio communications, cellphones, EMI testing, and much more. Additional Features:
- Frequency Range: 1000 MHz
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Description: Features Circuitry: Class B Linear Input Power: 120V AC 60Hz or 230V AC 50Hz Input Signal: 0-2V rms. into 600 ohm load (50 ohm, 75 ohm optional) Frequency Response: 10Hz to 1MHz
- Amplifier Type: Power Amplifier
- Applications: Terrestrial RF/Microwave Systems
- Frequency Range: 1.00E-5 to 1 MHz
- Maximum Operating Voltage: 230 volts
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Supplier: Win Source Electronics
Description: Manufacturer: AMIS Category: RF and Wireless>RF Amplifiers Packaging: Bulk Part Status: Obsolete Resistance (Ohms): 45k Tolerance: ±20% Power (Watts): 30 W Composition: Wirewound Features: Bootstrap Circuit, Diode Emulation Package / Case: 8-SMD, No Lead
- Applications: Terrestrial RF/Microwave Systems
- Package Type: Other
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Supplier: AR Modular RF
Description: The Model KAW1050 is a general-purpose, wideband RF power amplifier for signals in the 1 MHz to 400 MHz frequency range. No tuning, band switching, or adjustments of any kind are required to operate this unit. Power output is in excess of 25 Watts into a 50-Ohm
- Amplifier Type: Power Amplifier
- Applications: SATCOM Amplifier
- Frequency Range: 1 to 400 MHz
- Gain Flatness: 2 dB
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Supplier: Northrop Grumman Corporation
Description: Microelectronics Products & Services is now offering a line of Gallium Nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) intended for military and challenging commercial wireless, high-power amplifier applications. GaN Power Amplifiers Products
- Amplifier Type: Power Amplifier
- Applications: Military / Defense
- Frequency Range: 10000 to 46000 MHz
- Maximum Gain: 25.5 dB
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Supplier: Skyworks Solutions, Inc.
Description: 1 GHz Power Doubler Hybrid Amplifier
- Amplifier Type: Power Amplifier
- Noise Figure: 7.5 dB
- Nominal Operating Current: 0.4300 amps
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Supplier: APITech
Description: API Technologies' line of Gallium Nitride (GaN) Power Amplifiers utilize pulsed, solid state power amplifier technology and include designs that operate with output power levels up to 1,000 watts and frequencies to 18 GHz. These power
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Supplier: Custom MMIC
Description: The CMD262 is a 5 W GaN MMIC power amplifier die ideally suited for Ka-band communications systems where high power and high linearity are needed. The device delivers greater than 26 dB of gain with a corresponding output 1 dB compression point of +37.5 dBm and a
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Radar Systems, SATCOM Amplifier, Terrestrial RF/Microwave Systems
- Frequency Range: 26000 to 28000 MHz
- MMIC Technology Required: Yes
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Supplier: QuinStar Technology, Inc.
Description: QuinStar Technology’s series QPN power amplifiers utilize advanced Millimeter wave Monolithic Integrated Circuits (MMICs) and discrete devices for state-of-the-art power performance up to 4 GHz bandwidth in the 18-95 GHz frequency range. The standard amplifier housing
- Amplifier Type: Power Amplifier
- Frequency Range: 18000 to 95000 MHz
- Gain Flatness: 1.25 to 4 dB
- Maximum Gain: 50 dB
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Supplier: Qorvo
Description: The RF3628 broad-band linear power amplifier supports B1 (1920-1980MHz), B2 (1850 - 1910MHz), B5 (824 - 849MHz) and B8 (880 - 915MHz) in 3.4 V, 50 O mobile equipment designed for 3G UMTS transmit. RF3628 meets the spectral linearity requirements of HSDPA, HSUPA and
- Amplifier Type: Power Amplifier
- Maximum Gain: 28 dB
- Maximum Operating Voltage: 3.6 volts
- Minimum Gain: 28 dB
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Supplier: Broadcom Inc.
Description: The AMMC-6408 MMIC is a broadband 1W power amplifier in a surface mount package. It is designed for use in transmitters that operate in various frequency bands between 6GHz and 18GHz.
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems, SATCOM Amplifier, Terrestrial RF/Microwave Systems
- Frequency Range: 6000 to 18000 MHz
- MMIC Technology Required: Yes
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Description: AMPLIFIER,POWER
- Maximum Gain: 27 dB
- Minimum Gain: Up to 27 dB
- Package Type: Other
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Description: PIDSO's high efficiency linear power amplifier CRD.002-00A is ideally suited for rugged COFDM Video transmission applications in high PAPR scenarios. The high-efficiency linear power amplifier is built for harsh environments and provides 30dB of gain with a P1dB
- Amplifier Type: Power Amplifier
- Package Type: Connectorized
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Supplier: Fairview Microwave Inc.
Description: connectors and rated at 1 Watt. Our SMA medium power RF amplifier design has a 54 dB typical gain. Fairview RF medium power high gain amplifier part number FMAM5074 is rated with a Psat of 30 dBm. Our radio frequency medium power
- Amplifier Type: Power Amplifier
- Frequency Range: 2000 to 2600 MHz
- Maximum Gain: 54 dB
- Maximum Operating Voltage: 30 volts
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Supplier: NuWaves Ltd.
Description: The NuPower™ 12D05A is a small, highly efficient, connectorized solid state power amplifier that delivers up to 35 watts of RF power from 1700 to 2400 MHz to extend the operational range of data links and transmitters. The NuPower 12D05A accepts a nominal 0
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Mobile / Wireless Systems
- Frequency Range: 1700 to 2400 MHz
- Maximum Gain: 45 dB
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Supplier: Acme Chip Technology Co., Limited
Description: WIDE BAND HIGH POWER AMPLIFIER
- Package Type: Other
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Supplier: Marki Microwave LLC
Description: The ADM3-0022PA has the gain and output power to produce 1W of output power from a +0 dBm input power up to 22 GHz. It contains 3 broadband amplifier stages in series in a single package with built-in equalization to provide a flat gain and output
- Amplifier Type: Power Amplifier, Other
- Frequency Range: 0.0 to 22000 MHz
- Package Type: Connectorized, Other
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Supplier: TMP Pro Distribution
Description: , versatile loading options, high thermal capacity and proven reliability, the CX Series is the ideal solution to any permanently installed sound system. The model line incorporates QSC's exclusive PowerLight technology and are equipped with many contractor specific features including
- Type: Amplifier
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Supplier: Rohde & Schwarz USA, Inc.
Description: The R&S®BBL200 broadband amplifiers are ideal for applications requiring high RF power. The R&S®BBL200 broadband amplifiers generate 3 kW, 5 kW and 10 kW of power in a frequency range from 9 kHz to 225 MHz. They are liquid-cooled, solidstate,
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 0.0090 to 225 MHz
- Gain Flatness: 3 dB
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Supplier: ODG (Origin Data Global)
Description: POWER AMPLIFIER,CERAMIC,7- LEAD
- IC Package Type: Other
- Supply Voltage: Other
- Technology: Other
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Supplier: Qorvo
Description: The QPA0004 is a reconfigurable dual-band MMIC power amplifier operating in both S-Band and X-Band. In S-Band, it provides 9W saturated power over the 3.1 to 3.5GHz frequency range. In X-Band, it provides 8W saturated power from 9 to 11GHz. The
- Device Type: Power Operational Amplifiers
- Operating Range: Military
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Supplier: Texas Instruments
Description: 1.25 Watt Fully Differential Audio Power Amplifier With RF Suppression and Shutdown 8-WSON
- Device Type: Audio Amplifiers
- RoHS Compliant: Yes
Find Suppliers by Category Top
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Qorvo's QPA0016 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA0016 targets the 13.75-14.5 GHz Satcom band while providing 5-Watts of linear power with third-order intermodulation distortion products of 25 d (read more)
Browse Power Operational Amplifiers Datasheets for Qorvo -
-pull amplifiers, and RF power amplifiers. Power amplifiers are typically found in the final output stages of a circuit. There are five classes of power amplifiers: Class A, B, AB, C, and D. Let’s take a look at the characteristics of each. Class A power amplifiers’ (read more)
Browse RF Amplifiers Datasheets for ASAP Semiconductor LLC -
experienced in the design and development of high power amplifier modules and systems for C-UAS and EW. UAS represent a rapidly growing, low-cost, high-reward surveillance and attack threat to military and civilian personnel and infrastructure (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Qorvo's QPA0023D is a high-performance driver amplifier fabricated on Qorvo's production 0.15 um pHEMT process (QPHT15). Covering 6 – 18 GHz, the QPA0023D provides 13.5 dB small signal gain and 30 dBm P1dB with a saturated power of 32 dBm. In addition, the device has low IMD3 level of (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
controlled RF power amplifier ideal for ISM band and industrial wireless communication. With excellent small-signal gain of 32 dB and superior noise performance, it supports reliable mid-power amplification with flexible output control (read more)
Browse RF Amplifiers Datasheets for Win Source Electronics -
Package At Reference: 6 V / 70 mA / 5 GHz: - Gain: 13.5 dB - OIP3: 30 dBm - OP1dB: 16.5 dBm - Evaluation Board Noise Figure: 4.2 dB APPLICATIONS - Microwave Backhaul - C-Band Amplifiers - X-Band Amplifiers - Instrumentation (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Qorvo's QPA0813 is a packaged, high performance driver amplifier fabricated on Qorvo's production 0.15 um GaAs pHEMT process (QPHT15). Covering 8?-?11 GHz, the QPA0813 provides 0.7 W of saturated output power with 50% power-added efficiency. The device has an Enable / Disable function for fast (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
45 MHz - 1794 MHz, 34V, 18W, 23dB Gain High Output Power Doubler CATV Hybrid The QPA3316 is a Hybrid Power Doubler amplifier module,with 23 dB of gain. The part employs GaAs/GaN die and has an operational bandwidth from 45 MHz to 1794 MHz. It provides excellent (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
, or difficult to operate for small-scale dynamic testing applications. The VSA Series Mini Power Amplifiers are engineered specifically for compact precision vibration test systems, providing high (read more)
Browse Power Amplifiers Datasheets for ECON Technologies Co.,Ltd -
Qorvo's QPA4003 is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating from 26.5 to 29.5 GHz, it achieves 1.25 W linear power with lower than −33 dBc intermodulation distortion products and 29 dB small signal gain. Saturated output power is greater (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo
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An RF MEMS switch for 4G Front-Ends
[5] A. Fukuda, T. Furuta, H. Okazaki, and S. Narahashi, “A 0.9-5- GHz wide range 1W -Class reconfigurable power amplifier employing RF -MEMS switches,” 2006 IEEE MTT-S Int.
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A multi-mode multi-band reconfigurable power amplifier for low band GSM/UMTS handset applications
[1] A. Fukuda et al., "A 0.9-5-GHz Wide-Range 1W -Class Reconfigurable Power Amplifier Employing RF -MEMS Switches," in IEEE MTT-S Int. Dig., Jun. 2006, pp. 1859– 1862.
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Development of RF-MEMS ohmic contact switch for mobile handsets applications
[1] A. Fukuda, T. Furuta, H. Okazaki, and S. Narahashi, “A 0.9-5- GHz wide range 1W -Class reconfigurable power amplifier employing RF -MEMS switches,” IEEE MTT-S Int.
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A multi-band reconfigurable power amplifier for UMTS handset applications
[1] A. Fukuda, T. Furuta, H. Okazaki, and S. Narahashi, "A 0.9-5- GHz Wide-Range 1W -Class Reconfigurable Power Amplifier Employing RF -MEMS Switches," IEEE MTT-S Int.
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A high power and highly efficient multi-band power amplifier for mobile terminals
[8] A. Fukuda, T. Furuta, H. Okazaki, and S. Narahashi, “A 0.9-5-GHz wide range 1W -Class reconfigurable power amplifier employing RF -MEMS switches,” IEEE MTT-S Int.
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Multi-bit reconfigurable resonator using tapped transmission line and RF switches
A. Fukuda, T. Furuta, H. Okazaki and S. Narahashi, “A 0.9-5-GHz Wide-Range 1W -Class Reconfigurable Power Amplifier Employing RF -MEMS Switches,” IEEE International Microwave Symposium 2006 Digest, June 2006.
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A novel reconfigurable quad-band power amplifier with reconfigurable biasing network and LTCC substrates
[8] A. Fukuda, T. Furuta, H. Okazaki, and S. Narahashi, “A 0.9-5- GHz Wide Range 1W -Class Reconfigurable Power Amplifier Employing RF -MEMS switches,” 2006 IEEE MTT-S Int.
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MEMS-based reconfigurable RF front-end architecture for future band-free mobile terminals
A. Fukuda, T. Furuta, H. Okazaki, and S. Narahashi, “A 0.9-5-GHz wide-range 1W -class reconfigurable power amplifier employing RF - MEMS switches,” in 2006 IEEE MTT-S International Microwave Symposium Digest, pp. 1859–1862, June 2006.
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High-power ultrafast laser diodes
In order to obtain the highest output power from the amplifier , an RF current with - 1W of power was applied to the diode amplifier.
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Strategies for improved temporal and spectral resolution in in vivo oximetric imaging using time‐domain EPR
The RF amplifiers ZFL 1000LN, ZFL 1000VH; mixer ZFM-2H; filter PLP-15; switches ZYSW-2-50-DR, ZYSWA-2-50-DR, and ZFSWA-2-46; and power dividers ZFSC-3-4, PSCJ-2- 1W , and PSCQ-2-400 were obtained from …