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Supplier: MACOM
Description: At MACOM we design, manufacture, and support a wide variety of power amplifiers for RF, microwave, and millimeter wave applications. Our Power amplifiers cover 40 KHz to 90 GHz operation for a wide range of both linear and saturated applications, including network
- Amplifier Type: Power Amplifier
- Applications: Terrestrial RF/Microwave Systems
- Frequency Range: 0.0 to 86000 MHz
- Maximum Gain: 30 dB
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Supplier: Northrop Grumman Corporation
Description: Microelectronics Products & Services is now offering a line of Gallium Nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) intended for military and challenging commercial wireless, high-power amplifier applications. GaN Power Amplifiers Products
- Amplifier Type: Power Amplifier
- Applications: Military / Defense
- Frequency Range: 10000 to 46000 MHz
- Maximum Gain: 25.5 dB
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Supplier: APITech
Description: API Technologies' line of Gallium Nitride (GaN) Power Amplifiers utilize pulsed, solid state power amplifier technology and include designs that operate with output power levels up to 1,000 watts and frequencies to 18 GHz. These power
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Terrestrial RF/Microwave Systems
- Package Type: Connectorized
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Supplier: AR Modular RF
Description: The Model KAW1050 is a general-purpose, wideband RF power amplifier for signals in the 1 MHz to 400 MHz frequency range. No tuning, band switching, or adjustments of any kind are required to operate this unit. Power output is in excess of 25 Watts into a 50-Ohm
- Amplifier Type: Power Amplifier
- Applications: SATCOM Amplifier
- Frequency Range: 1 to 400 MHz
- Gain Flatness: 2 dB
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Supplier: AR Modular RF
Description: The Model KAW1040 is a general-purpose, wideband RF power amplifier for signals in the 1 MHz to 512 MHz frequency range. No tuning, band switching, or adjustments of any kind are required to operate this unit. Power output is in excess of 20 Watts into a 50-Ohm
- Amplifier Type: Power Amplifier
- Frequency Range: 1 to 512 MHz
- Gain Flatness: 2 dB
- Maximum Operating Voltage: 264 volts
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Supplier: AR Modular RF
Description: The Model KAA4020 is a Class AB wideband RF power amplifier that delivers more than 500 Watts CW power into a 50-Ohm load over the frequency range of 1 MHz to 50 MHz. Power gain is a minimum of 57 dB. GPIB control requires the optional IEEE488.2/RS232
- Amplifier Type: Power Amplifier
- Frequency Range: 1 to 50 MHz
- Gain Flatness: 1.5 dB
- Maximum Operating Voltage: 265 volts
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Supplier: ValueTronics International, Inc.
Description: The 1W1000 is a 1 GHz 1 Watt RF Amplifier from Amplifier Research. Amplify RF and Microwave signals to measure, test, and design circuits. Applications include radio communications, cellphones, EMI testing, and much more. Additional Features:
- Frequency Range: 1000 MHz
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Supplier: ValueTronics International, Inc.
Description: The 757LC is a 1 GHz, 100 W RF amplifier from Kalmus. Amplify RF and Microwave signals to measure, test, and design circuits. Applications include radio communications, cellphones, EMI testing, and much more. Additional Features: Power Output: 100 W
- Frequency Range: 1000 MHz
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Supplier: ValueTronics International, Inc.
Description: 250 kHz to 105 MHz and a linear power output of 100 W. Amplifier gain is a nominal 55 dB. Input/output impedance of 50 ohms, VSWR input 1.5:1 max, output 2.5:1 max. Each unit has a built in meter that indicates both output RF voltage as well as power
- Frequency Range: 105 MHz
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Supplier: ValueTronics International, Inc.
Description: Gain: 50db Gain Variation: + 1.5db Max. Class A Linear Power Output: 50 watts Max Power Output: 100 Watts CW & Pulse, 1.5-220 MHz RF Input: Type N RF Output: Type N The Model 550L RF Amplifier is an air-cooled source of power for
- Frequency Range: 400 MHz
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Supplier: QuinStar Technology, Inc.
Description: QuinStar Technology’s series QPN power amplifiers utilize advanced Millimeter wave Monolithic Integrated Circuits (MMICs) and discrete devices for state-of-the-art power performance up to 4 GHz bandwidth in the 18-95 GHz frequency range. The standard amplifier housing
- Amplifier Type: Power Amplifier
- Frequency Range: 18000 to 95000 MHz
- Gain Flatness: 1.25 to 4 dB
- Maximum Gain: 50 dB
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Supplier: QuinStar Technology, Inc.
Description: QuinStar’s series QPW power amplifiers utilize advanced MMICs and discrete devices for state-of-the-art CW power performance in the 16-95 GHz frequency range with minimum bandwidth of 5 GHz. The standard amplifier housing offers a wide range and combinations of input and
- Amplifier Type: Power Amplifier
- Frequency Range: 16000 to 95000 MHz
- Gain Flatness: 2 to 3.5 dB
- Maximum Gain: 50 dB
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Supplier: Skyworks Solutions, Inc.
Description: The SKY85018-11 is a high-power Bluetooth power amplifier with bypass mode. The SKY85018-11 is provided in a small 1.5 mm x 1.5 mm package. Features High-power Bluetooth PA with bypass PA gain: 20 dB Low bypass loss Output power: +23 dBm, BDR
- Amplifier Type: Power Amplifier
- Maximum Gain: Over 20 dB
- Minimum Gain: 20 dB
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Supplier: RFMW Ltd.
Description: Power Amplifier Module, 1.92 to 1.98 GHz, 3V WCDMA BAND 1 LINEAR PA MODULE
- Amplifier Type: Power Amplifier
- Applications: Terrestrial RF/Microwave Systems
- Frequency Range: 1920 to 1980 MHz
- Maximum Gain: 28 dB
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Supplier: Analog Devices, Inc.
Description: a common driver/LO amplifier approach in multiple radio bands. The HMC383 amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its compact size, single supply operation, and DC blocked RF I/Os. All data is measured with the chip in a 50 Ohm test fixture
- Amplifier Type: Power Amplifier
- Frequency Range: 12000 to 30000 MHz
- Maximum Gain: 16 dB
- Minimum Gain: 16 dB
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Supplier: Richardson RFPD
Description: 1 – 150 MHz, 1 Watt Power Amplifier
- Amplifier Type: Power Amplifier
- Frequency Range: 1 to 150 MHz
- Maximum Gain: 17 dB
- Maximum Operating Voltage: 14 volts
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Supplier: NuWaves Ltd.
Description: The NuPower™ 12D05A is a small, highly efficient, connectorized solid state power amplifier that delivers up to 35 watts of RF power from 1700 to 2400 MHz to extend the operational range of data links and transmitters. The NuPower 12D05A accepts a nominal 0
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Mobile / Wireless Systems
- Frequency Range: 1700 to 2400 MHz
- Maximum Gain: 45 dB
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Supplier: AR RF/Microwave Instrumentation
Description: Model 150W1000B, when used with a sweep generator, will provide 150 watts of RF power. Included is a front panel gain control which permits the operator to conveniently set the desired output level. The 150W1000B is protected from RF input overdrive by an RF
- Amplifier Type: Power Amplifier
- Frequency Range: 80 to 1000 MHz
- Input VSWR: 1.5 :1
- Maximum Gain: 52 dB
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Supplier: ROHDE & SCHWARZ, Inc.
Description: The R&S®BBL200 broadband amplifiers are ideal for applications requiring high RF power. The R&S®BBL200 broadband amplifiers generate 3 kW, 5 kW and 10 kW of power in a frequency range from 9 kHz to 225 MHz. They are liquid-cooled, solidstate,
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 0.0090 to 225 MHz
- Gain Flatness: 3 dB
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Supplier: Digi-Key Electronics
Description: AMPLIFIER
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 5 to 1100 MHz
- Maximum Gain: 14.7 dB
- Maximum Operating Voltage: 15 volts
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Description: Features Circuitry: Class B Linear Input Power: 120V AC 60Hz or 230V AC 50Hz Input Signal: 0-2V rms. into 600 ohm load (50 ohm, 75 ohm optional) Frequency Response: 10Hz to 1MHz
- Amplifier Type: Power Amplifier
- Applications: Terrestrial RF/Microwave Systems
- Frequency Range: 1.00E-5 to 1 MHz
- Maximum Operating Voltage: 230 volts
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Supplier: TMP Pro Distribution
Description: per channel); CLIP: Red LED (1 per channel) Dimensions 19" (48.3 cm) rack mounting, 5.25"(13.3cm) tall (3 rack spaces), 15.9" (40 cm) deep (from front mounting rails) Amplifier Protection: Full short circuit, open circuit, thermal, ultrasonic, and RF protection; Stable into
- Type: Amplifier
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Supplier: Amp-Line Corp.
Description: Wideband AC power amplifier: Broadband, Linear, 5 Hz - 1M Hz, 0-28 V rms. 50 watts. DC-coupled option and optional output transformer available to obtain different output voltage ranges in audio, ultrasonic and RF frequencies.
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Supplier: Broadcom Inc.
Description: The AMMC-6408 MMIC is a broadband 1W power amplifier in a surface mount package. It is designed for use in transmitters that operate in various frequency bands between 6GHz and 18GHz.
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems, SATCOM Amplifier, Terrestrial RF/Microwave Systems
- Frequency Range: 6000 to 18000 MHz
- MMIC Technology Required: Yes
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Supplier: Microchip Technology, Inc.
Description: The SST12CP11 is a high-power and high-gain power amplifier (PA) based on the highly-reliable InGaP/GaAs HBT technology.This PA can be easily configured for high-power applications with good power-added efficiency while operating over the 2.4-2.5 GHz frequency
- Device Type: Power Operational Amplifiers
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Supplier: Custom MMIC
Description: The CMD262 is a 5 W GaN MMIC power amplifier die ideally suited for Ka-band communications systems where high power and high linearity are needed. The device delivers greater than 26 dB of gain with a corresponding output 1 dB compression point of +37.5 dBm and a
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Radar Systems, SATCOM Amplifier, Terrestrial RF/Microwave Systems
- Frequency Range: 26000 to 28000 MHz
- MMIC Technology Required: Yes
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Supplier: Analog Devices, Inc.
Description: Product Details The HMC-APH518 is a two stage GaAs HEMT MMIC 1 Watt Power Amplifier which operates between 21 and 24 GHz. The HMC-APH518 provides 17 dB of gain, and an output power of +30.5 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the
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Supplier: Qorvo
Description: The RF3628 broad-band linear power amplifier supports B1 (1920-1980MHz), B2 (1850 - 1910MHz), B5 (824 - 849MHz) and B8 (880 - 915MHz) in 3.4 V, 50 O mobile equipment designed for 3G UMTS transmit. RF3628 meets the spectral linearity requirements of HSDPA, HSUPA and
- Amplifier Type: Power Amplifier
- Maximum Gain: 28 dB
- Minimum Gain: 28 dB
- Package Type: Surface Mount Technology (SMT)
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Supplier: Richardson RFPD
Description: The SKU 1212 is a 2000 to 6000 MHz amplifier which is guaranteed to deliver 50W minimum output power and related RF performance under all specified temperature and environmental conditions. Typical power output is 65W and other typical performance parameters
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Supplier: Pasternack
Description: PE15A3016 medium power broadband amplifier from Pasternack is featured in our extensive in-stock RF amplifier selection. Our connectorized medium power broadband amplifier uses SMA connectors at 50 Ohm. This SMA broadband amplifier has wide-band
- Amplifier Type: Power Amplifier
- Frequency Range: 2000 to 8000 MHz
- Input VSWR: 2 :1
- Maximum Gain: 33 dB
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Supplier: Fairview Microwave Inc.
Description: RF power amplifier FMAM5034F from Fairview Microwave is just one amp of a large selection of in-stock radio frequency amplifiers specifically stocked to be highly available for quick shipment. Fairview RF power amplifier is a connectorized medium
- Amplifier Type: Power Amplifier
- Frequency Range: 800 to 4200 MHz
- Maximum Operating Voltage: 13 volts
- Minimum Gain: 31 dB
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Supplier: Picosecond Pulse Labs, Inc.
Description: Features Broadband linear gain amplifier with 15 dB gain 15 GHz bandwidth with ±0.3dB gain flatness Lower 3 dB frequency of 10 kHz Low deviation from linear phase (±3 degrees) 1 dB gain compression point of 13 d
- Amplifier Type: Other
- Frequency Range: 15000 MHz
- Maximum Gain: 15 dB
- Minimum Gain: 15 dB
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Supplier: Infineon Technologies AG
Description: Wideband RF LDMOS Integrated Power Amplifier - 15W, 28V, 1800-2200MHz Summary of Features: - Designed for wide RF bandwidth and low memory effects - Broadband input on-chip matching - Typical two-carrier WCDMA performance at 2140MHz, 28V, 7W avg, - Gain =
- Frequency Range: 1800 to 2200 MHz
- Maximum Gain: 28.5 dB
- Maximum Operating Voltage: 28 volts
- Minimum Gain: 28.5 dB
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Supplier: Analog Devices, Inc.
Description: Product Details The ADL5561 is a high performance differential amplifier optimized for RF and IF applications. The amplifier offers low noise of 2.1 nV/vHz and excellent distortion performance over a wide frequency range, making it an ideal driver for high speed 8-bit to
- Device Type: Differential Amplifiers
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Maxim Integrated
Description: The MAX2235 low-voltage, silicon RF power amplifier (PA) is designed for use in the 900MHz frequency band. It operates directly from a single +2.7V to +5.5V supply, making it suitable for use with 3-cell NiCd or 1-cell Li-Ion batteries. The device delivers +30dBm
- Device Type: Power Operational Amplifiers
- Package Type: TSSOP
- RoHS Compliant: Yes
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Qorvo® Advances Defense Phased Array Radar Performance and Capabilities with 150W GaN Power Amplifier (read more)
Browse Power Operational Amplifiers Datasheets for Qorvo -
Qorvo's QPA2966D is a wideband power amplifier fabricated on Qorvo's QGaN15 GaN on SiC process. The QPA2966D operates from 2 to 20 GHz, providing > 20 W of saturated power. QPA2966D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead free and RoHS compliant. (read more)
Browse Power Operational Amplifiers Datasheets for Qorvo -
Qorvo® Adds New GaN Power Amplifiers for Mission-Critical Applications. Qorvo's QPA2211D is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating between 27 and 31 GHz, it achieves 5 W linear power with −25 dBc intermodulation distortion products (read more)
Browse Power Operational Amplifiers Datasheets for Qorvo -
Qorvo's QPA2575 is a Ka-band power amplifier fabricated on Qorvo's QPHT15 0.15 um power pHEMT process. The QPA2575 operates from 32 to 38 GHz, providing 3 W of saturated power with 16 % power-added efficiency, and 19 dB small signal gain. To simplify system (read more)
Browse Power Operational Amplifiers Datasheets for Qorvo -
INDUSTRY’S HIGHEST POWER, LINEARITY AND EFFICIENCY MAXIMIZE PERFORMANCE IN KA-BAND AND X-BAND SYSTEMS Qorvo's QPA2212T is a Ka-band die-on-tab power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating between 27.5 and 31 GHz, it achieves 25 W (read more)
Browse Power Operational Amplifiers Datasheets for Qorvo -
7x4x1.2 inch Common Heat Sink and Fan Assembly GaN Models Utilize Silicon on Carbide (SiC) Modules Include Mating Connector with Pigtail assembly Enables discrete or digital RS485 Control of the following (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
WEBINAR: Balancing Throughput and Process Control for Manufacturing of RF Power Amplifier Assemblies The production of RF power amplifiers necessitates both high volume and high quality. In general, finding a balance between maximizing throughput and meeting the required performance (read more)
Browse Die Bonders Datasheets for Palomar Technologies, Inc -
Output Channels: 9 Output Power: 90 watts total (10 watts per channel) Output Current: 0 - 1 A rms. @ 10 V compliance volts Frequency Range: 300 Hz - 2K Hz Model AL-120-CR-L/A-6 6-channel Constant Current Power Amplifier (Customer: Kongsberg Maritime (read more)
Browse Power Amplifiers Datasheets for Amp-Line Corp. -
The QPA9901 is a high-efficiency, fully input and output matched linearizable power amplifier in RoHS compliant surface mount package. This InGaP/GaAs HBT device delivers high performance across wideband frequencies with +35.6dBm P3dB while maintaining 32% PAE at 28dBm average operation power (read more)
Browse RF Amplifiers Datasheets for Qorvo -
GaN Systems has added a 50 W wireless power amplifier - a small size, low cost, and high efficiency evaluation board ideal for wireless power transfer and charging (read more)
Browse Power Amplifiers Datasheets for Richardson RFPD
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An RF MEMS switch for 4G Front-Ends
[5] A. Fukuda, T. Furuta, H. Okazaki, and S. Narahashi, “A 0.9-5- GHz wide range 1W -Class reconfigurable power amplifier employing RF -MEMS switches,” 2006 IEEE MTT-S Int.
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A multi-mode multi-band reconfigurable power amplifier for low band GSM/UMTS handset applications
[1] A. Fukuda et al., "A 0.9-5-GHz Wide-Range 1W -Class Reconfigurable Power Amplifier Employing RF -MEMS Switches," in IEEE MTT-S Int. Dig., Jun. 2006, pp. 1859– 1862.
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Development of RF-MEMS ohmic contact switch for mobile handsets applications
[1] A. Fukuda, T. Furuta, H. Okazaki, and S. Narahashi, “A 0.9-5- GHz wide range 1W -Class reconfigurable power amplifier employing RF -MEMS switches,” IEEE MTT-S Int.
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A multi-band reconfigurable power amplifier for UMTS handset applications
[1] A. Fukuda, T. Furuta, H. Okazaki, and S. Narahashi, "A 0.9-5- GHz Wide-Range 1W -Class Reconfigurable Power Amplifier Employing RF -MEMS Switches," IEEE MTT-S Int.
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A high power and highly efficient multi-band power amplifier for mobile terminals
[8] A. Fukuda, T. Furuta, H. Okazaki, and S. Narahashi, “A 0.9-5-GHz wide range 1W -Class reconfigurable power amplifier employing RF -MEMS switches,” IEEE MTT-S Int.
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Multi-bit reconfigurable resonator using tapped transmission line and RF switches
A. Fukuda, T. Furuta, H. Okazaki and S. Narahashi, “A 0.9-5-GHz Wide-Range 1W -Class Reconfigurable Power Amplifier Employing RF -MEMS Switches,” IEEE International Microwave Symposium 2006 Digest, June 2006.
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A novel reconfigurable quad-band power amplifier with reconfigurable biasing network and LTCC substrates
[8] A. Fukuda, T. Furuta, H. Okazaki, and S. Narahashi, “A 0.9-5- GHz Wide Range 1W -Class Reconfigurable Power Amplifier Employing RF -MEMS switches,” 2006 IEEE MTT-S Int.
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MEMS-based reconfigurable RF front-end architecture for future band-free mobile terminals
A. Fukuda, T. Furuta, H. Okazaki, and S. Narahashi, “A 0.9-5-GHz wide-range 1W -class reconfigurable power amplifier employing RF - MEMS switches,” in 2006 IEEE MTT-S International Microwave Symposium Digest, pp. 1859–1862, June 2006.
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High-power ultrafast laser diodes
In order to obtain the highest output power from the amplifier , an RF current with - 1W of power was applied to the diode amplifier.
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Strategies for improved temporal and spectral resolution in in vivo oximetric imaging using time‐domain EPR
The RF amplifiers ZFL 1000LN, ZFL 1000VH; mixer ZFM-2H; filter PLP-15; switches ZYSW-2-50-DR, ZYSWA-2-50-DR, and ZFSWA-2-46; and power dividers ZFSC-3-4, PSCJ-2- 1W , and PSCQ-2-400 were obtained from …