256x8 Memory Chips

Description: 256Kbit 1000kHz I2C SOP-8 EEPROM ROHS

• Memory Category: EEPROM

Description: EEPROM Memory IC 256Kbit I²C 1 MHz 3.5 µs 8-SOIC

• Density: 256 kbits
• Access Time: 3,500 ns
• Operating Temperature: 0 to 70 C
• Memory Category: EEPROM

Description: IC EEPROM 256KBIT I2C 400KHZ 8SO

• Density: 256 kbits
• Data Rate: 0.4 MHz
• Access Time: 900 ns
• Operating Temperature: -40 to 85 C

Description: IC EEPROM 256KBIT I2C 400KHZ 8SO

• Density: 256 kbits
• Access Time: 900 ns
• Memory Category: EEPROM
• Features: I²C, Other

Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 256GB. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 256GB, Memory IC and Storage Component, SSDs, HDDs. This listing

Description: FRAM, 256KBIT, SPI, SOP-8; Memory Type:FRAM; Memory Size:256Kbit; NVRAM Memory Configuration:32K x 8bit; IC Interface Type:SPI; Access Time:-; Memory Case Style:SOP; No. of Pins:8Pins; Supply Voltage Min:2.7V; Supply Voltage RoHS Compliant: Yes

Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 256MB, 1066MHz. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 256MB, 1066MHz, Memory IC and Storage Component, Memory - Modules.

Description: Win Source Part Number: 1036055-CAT24WC256X-1.8 Category: Integrated Circuits (ICs)>Memory Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: EEPROM Memory Type: Non-Volatile Memory Size: 256Kb (32K x 8) Access Time: 3.5 µs Voltage - Supply: 1.8V ~ 6V Package /

• Access Time: 3,500 ns
• Cycle Time: 10,000,000 ns
• Operating Temperature: 0 to 70 C
• Memory Category: EEPROM

Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 256GB, 6Gb. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 256GB, 6Gb, Memory IC and Storage Component, SSDs, HDDs. This

Description: FLASH Memory IC 2Mb (256K x 8) SPI 104MHz 8-USON (2x3)

• Density: 2,000 kbits
• Operating Temperature: -40 to 85 C
• Memory Category: Flash
• Features: Other

Description: Win Source Part Number: 941024-256MX8 PC1333 Series: * Categories: Memory

Description: Win Source Part Number: 950641-HYS64T256022EDL-3S-B_(256x8/8_ICs) Series: * Categories: Memory - Modules

Description: Win Source Part Number: 948867-KVR1333D3S8N9/2G/(256x8) Series: * Categories: Memory - Modules

Description: TT Memories is a division of Twilight Technology formed to support the memory marketplace from legacy technologies to state-of-the-art technologies. TT Memories manufactures devices and modules for the Commercial, Industrial, Aerospace, and Defense marketplaces. TT Memories also designs and

• Density: 8,000 kbits
• Operating Temperature: -55 to 125 C
• Supply Voltage: 5 V
• Memory Category: Flash

Description: FRAM, 256KBIT, I2C, SOP-8; Memory Type:FRAM; Memory Size:256Kbit; NVRAM Memory Configuration:32K x 8bit; IC Interface Type:I2C; Access Time:-; Memory Case Style:SOP; No. of Pins:8Pins; Supply Voltage Min:2.7V; Supply Voltage RoHS Compliant: Yes

Description: IC, MEMORY, FLASH, 256MBIT, 1.8V, 16SOIC; Flash Memory Type:Serial NOR; Memory Size:256Mbit; Flash Memory Configuration:32M x 8bit; IC Interface Type:SPI; Memory Case Style:SOIC; No. of Pins:16Pins; Clock Frequency:133MHz; Access RoHS Compliant: Yes

Description: SERIAL EEPROM, 256KBIT, 400KHZ, SOIC-8; Memory Interface Type:Serial I2C (2-Wire); Memory Size:256Kbit; EEPROM Memory Configuration:32K x 8bit; Clock Frequency:400kHz; Memory Case Style:SOIC; No. of Pins:8Pins; MSL:MSL 1 - Unlimited RoHS Compliant: Yes

Description: IC EEPROM 256KBIT SPI 8TSSOP

• Density: 256 kbits
• Memory Category: EEPROM
• Features: Full Production, Other, SPI

Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC / EEPROM Memory IC 256Kb (32K x 8) I²C 1 MHz 3.5 µs 8-SOIC Product overview: CAT24WC256X-1.8 from Catalyst Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules,

• Access Time: 3,500 ns
• Cycle Time: 10,000,000 ns
• Operating Temperature: 0 to 70 C
• Memory Category: EEPROM

Description: 32K X 8 EEPROM,CMOS,HIGH SPEED,3

• Density: 32 kbits
• Memory Category: EEPROM
• Features: Full Production, Other

Description: MICRON NAND256W3A2BN6EFlash Memory, NAND, 256 Mbit, 32K x 8bit, TSOP, 48 Pins

• Density: 2,048,000 kbits
• Operating Current: 20 mA
• Standby Current: 0.05 mA
• Access Time: 35 ns

Description: The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing

• Operating Current: 60 mA
• Standby Current: 0.5 mA
• Access Time: 90 ns
• Memory Category: EEPROM

Description: MX25U Series 256 Mb (x 1/x 2/x 4) 1.8 V Surface Mount Flash Memory - BGA-24

• Density: 268,435.456 kbits
• Operating Temperature: -40 C
• Logic Family: CMOS 4000
• Memory Category: Flash

Description: Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL256SAGBAEA03

• Density: 256,000 kbits
• Operating Temperature: -55 to 125 C
• Supply Voltage: 2.7 V, 3 V, 3.6 V
• Features: Other

Description: Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL256SAGBAEA00

• Density: 256,000 kbits
• Operating Temperature: -55 to 125 C
• Supply Voltage: 2.7 V, 3 V, 3.6 V
• Features: Other

Description: The Microchip Technology Inc. 24C02C is a 2K bit Serial Electrically Erasable PROM with a voltage range of 4.5V to 5.5V. The device is organized as a single block of 256 x 8-bit memory with a 2-wire serial interface. Low-current design permits operation with typical standby and active

Description: Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL256SAGBHEA00

• Density: 256,000 kbits
• Operating Temperature: -55 to 125 C
• Supply Voltage: 2.7 V, 3 V, 3.6 V
• Features: Other

Description: Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL256SAGNFE000

• Density: 256,000 kbits
• Operating Temperature: -40 to 105 C
• Supply Voltage: 2.7 V, 3 V, 3.6 V
• Features: Other

Description: EEPROM, 32KX8, Serial, CMOS, PDSO8

• Logic Family: CMOS 4000
• Memory Category: EEPROM
• Features: Other
• Package Type: SOP

Description: 256 x 1 x 2 dual independent synchronous FIFO memories 28-SOIC -40 to 85

• Memory Category: FIFO
• Features: Other

Description: Memory Products Offered: MRAM SRAM nvSRAM VRAM SDRAM UVEPROM DRAM EEPROM FRAM Flash

• Density: 2,048 kbits
• Access Time: 80 to 150 ns
• Operating Temperature: -55 to 125 C
• Supply Voltage: 5 V

Description: 256 x 1 x 2 dual independent synchronous FIFO memories 24-SOIC -40 to 85

• Memory Category: FIFO
• Features: Other

Description: 256Mbit SPI 133MHz WSON-8-EP(6x8) NOR FLASH ROHS

• Density: 256,000 kbits
• Operating Temperature: -40 to 85 C
• Memory Category: Flash
• Features: NOR, Other

Description: 256Kbit I2C SOIC-8 EEPROM ROHS

• Density: 256 kbits
• Operating Temperature: -40 to 85 C
• Memory Category: EEPROM
• Features: I²C, Other

Description: (Pb/Halide-free) Packaging Only 32-lead, Plastic J-leaded Chip Carrier (PLCC) 28-lead, 0.600" wide, plastic, dual inline package (PDIP)

• Density: 256 kbits
• Access Time: 45 to 70 ns
• Data Retention: 20 years
• Operating Temperature: -40 to 85 C