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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
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Supplier: Nexperia B.V.
Description: NPN switching transistor in a SOT89 plastic package. PNP complement: PXT2907A. Features and benefits High current (max. 600 mA) Low voltage (max. 40 V). Applications General purpose switching and linear amplification.
- Package Type: SOT89, Other
- Polarity: NPN
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Package Type: SOT23, Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Package Type: SOT323, Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
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Supplier: Nexperia B.V.
Description: NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT2907A-Q Features and benefits High current (max. 600 mA) Low voltage (max. 40 V) Qualified according to AEC-Q101 and recommended for use in automotive
- Package Type: SOT23, Other
- Polarity: NPN
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Supplier: Nexperia B.V.
Description: NPN switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits High current (max. 600 mA) Low voltage (max. 40 V) AEC-Q101 qualified Applications Switching and linear amplification
- Package Type: SOT23, Other
- Polarity: NPN
- Transistor Grade / Operating Range: Automotive
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and
- Polarity: NPN
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Supplier: Utmel Electronic Limited
Description: TRANSISTOR, NPN, 40V, 0.6A, 50A/
- Polarity: NPN
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Supplier: Nexperia B.V.
Description: NPN switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits High current (max. 600 mA) Low voltage (max. 30 V) AEC-Q101 qualified Applications Switching and linear amplification
- Package Type: SOT23, Other
- Polarity: NPN
- Transistor Grade / Operating Range: Automotive
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Supplier: ROHM Semiconductor USA, LLC
Description: SST2222AHZG is the high reliability Automotive transistor, suitable for audio frequency small signal amplifier.
- Package Type: SOT23, Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and
- Package Type: Other
- Polarity: NPN
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Gen Pur SS
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: TRANSISTOR NPN
- Polarity: NPN
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Supplier: Utmel Electronic Limited
Description: TRANS NPN 50V 0.8A UB
- Polarity: NPN
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Supplier: Utmel Electronic Limited
Description: NPN Bipolar Transistor, SOT-223 (TO-261) 4 LEAD, 1000-REEL
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN G.P. TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Silicon
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: TRANS NPN 40V 0.6A TO18
- Package Type: Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: TRANS NPN 50V 0.8A TO18
- Package Type: Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ROHM Semiconductor GmbH
Description: SST2222A is bipolar transistor for audio frequency small signal amplifier.
- Package Type: SOT23, Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: Accuris
Description: TRANSISTOR, NPN, SILICON TYPES 2N2221, 2N2222
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Supplier: Win Source Electronics
Description: Manufacturer: Central Semiconductor Corp Win Source Part Number: 005691-2N2222A Packaging: Bulk Mounting: Through Hole Frequency - Transition: 300MHz Transistor Polarity: NPN Family Name: 2N2222A Categories: Discrete Semiconductor
- Package Type: SOT3, Other
- Polarity: NPN, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Microchip Technology Win Source Part Number: 922368-JANTXV2N2222A Series: Military, MIL-PRF-19500/255 Operating Temperature Range: -65°C ~ 200°C (TJ) Features: Bipolar (BJT) Transistor NPN 50 V 800 mA - 500 mW Through Hole TO-18
- Package Type: SOT3, Other
- Polarity: NPN
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Supplier: ODG (Origin Data Global)
Description: TRANS NPN 30V 0.6A TO18
- Package Type: Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: TRANS NPN 50V 0.8A 3SMD
- Package Type: Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 30V 800mA 500mW Through Hole TO-18
- Package Type: Other
- Polarity: NPN
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Supplier: Win Source Electronics
Description: Manufacturer: Microsemi Corporation Win Source Part Number: 140443-JAN2N2222A Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ
- Package Type: SOT3, Other
- Polarity: NPN, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Microsemi Corporation Win Source Part Number: 1191402-JANS2N2222A Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-18 (TO-206AA) Temperature Range -
- Package Type: SOT3
- Polarity: NPN
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and
- Package Type: Other
- Polarity: NPN
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Supplier: Accuris
Description: TRANSISTOR, NPN, SILICON TYPES 2N2221 , 2N2221A, 2N2222, 2N2222A
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Supplier: Semicoa
Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Military
- Transistor Type: General Purpose BJT
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon
- Package Type: Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: ROHM Semiconductor GmbH
Description: UM2222AU3 is bipolar transistor for audio frequency small signal amplifier.
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
- Package Type: Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
- Package Type: Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
- Package Type: Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With (read more)
Browse Transistors Datasheets for Win Source Electronics -
The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Explore the features and specifications of the BSS138PW,115 N-channel MOSFET from Nexperia USA Inc. This MOSFET is designed for a wide range of electronic applications, offering a balanced supply and demand status and medium popularity. With a drain-source breakdown voltage of 60V and a (read more)
Browse Transistors Datasheets for Win Source Electronics -
The WSF15N10 is an active, lead-free power MOSFET manufactured by WINSOK, housed in a compact and reliable TO-252 (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
PSUs, the use of GaN devices enables ~0.8–1.2% efficiency improvement at full load compared to silicon, while supporting ~40–70% increases in power density at the stage level, driven by higher switching frequencies and reduced passive component size. In a typical 1 kW high-voltage motor (read more)
Browse Transistors Datasheets for Nexperia B.V. -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo
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Effect of thermal annealing on radiation-induced degradation of bipolar technologies when the dose rate is switched from high to low
Excess input current as a function of the total dose for 2N2222A NPN transistor irradiated at a high dose rate (10 rad(Si)/s) and then switched to low dose rate (0.028 rad(Si)/s) at 50 krad(Si).
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Effect of switching from high to low dose rate on linear bipolar technology radiation response
Experiments were performed on commercial 2N2222A NPN transistors and 2N2907A PNP transistors from ST Microelec- tronics.
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Arduino Robotics
The common 2n2222a NPN transistor can be fully switched on with only a few milliamps of current and it can switch nearly 1 ampere, so it can be used as a simple low-side amplifier switch.
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Hybrid optoelectronic device with multiple bistable outputs
A Covega SOA model 1117 is used to construct the SOA-BJT device together with a standard 2N2222A NPN transistor .
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Inverter gate drive and phase leg development for 175°C operation
2N2222A npn transistor .
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Recent radiation test results at JPL
B. 2N2222A NPN Transistor (Semicoa .
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A fully-packaged electromagnetic microrelay
Microrelays integrated with a 2N2222A npn transistor as shown in Fig. 10, have been succesfully operated with an input current of O.lmA, corresponding to 20mA through the coil.
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Long Wave Infrared Cavity Enhanced Sensors
Figure 4.2 shows a comparison between the measured current and voltage noise of the NPN transistors 2N2222A , and 2N3904.
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CDMA Based Wireless System on DSK6711
Transistor 2N2222A NPN has been used here, two stages are collector biased input output and two stages are capacitvely coupled.
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On the aging of avalanche light emission from silicon junctions
Photomicrograph of the surface of a Philips 2N2222A npn bipolar transistor .