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Supplier: LCSC Electronics Technology (HK) Limited
Description: Single 600V 1.35V@3A 2A SOD-57 Avalanche Diodes ROHS
- IR: 0.0050 mA
- RoHS Compliant: Yes
- VF: 1.35 volts
- VR: 600 volts
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Supplier: LCSC Electronics Technology (HK) Limited
Description: Single 600V 2.5V@1A 1A SOD-57 Avalanche Diodes ROHS
- IR: 0.1000 mA
- RoHS Compliant: Yes
- VF: 2.5 volts
- VR: 600 volts
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 200V Single 1.07V@3A 2A SOD-57 Avalanche Diodes ROHS
- IR: 0.1000 mA
- RoHS Compliant: Yes
- VF: 1.07 volts
- VR: 200 volts
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 1.6kV 3.4V@1A 1A SOD-57 Avalanche Diodes ROHS
- RoHS Compliant: Yes
- VF: 3.4 volts
- VR: 1600 volts
- trr: 75 ns
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Supplier: Utmel Electronic Limited
Description: DIODE AVALANCHE 1KV 1.5A
- IF: 1500 mA
- IFSM: 30 amps
- IR: 1.00E-3 mA
- Lead Type: Other
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Supplier: Utmel Electronic Limited
Description: DIODE ARRAY AVALANCHE 90V SOT23
- Configuration: Array
- IF: 150 mA
- Life Cycle Stage: Other
- PD: 250 milliwatts
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Supplier: Utmel Electronic Limited
Description: DIODE AVALANCHE 1000V 1A DO220AA
- CT: 7.5 pF
- IF: 1000 mA
- IFSM: 30 amps
- IR: 1.00E-3 mA
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Supplier: Utmel Electronic Limited
Description: DIODE AVALANCHE 600V 1A SOD57
- IF: 1000 mA
- Lead Type: Axial Leads
- Life Cycle Stage: Other
- Package Type: Other
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Supplier: Marktech Optoelectronics
Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for
- Active Area Diameter or Length: 0.0400 mm
- Active Area Height: 230 mm
- Dark Current: 0.0500 nA
- Operating Temperature: -20 to 85 C
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Supplier: Richardson RFPD
Description: Avalanche Diode 2700A 2000V , Mounting force 22kN Low on-state voltage Avalanche reverse characteristics High operational reliability Suitable for parallel operation
- IF: 2.70E6 mA
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Description: Integrated Circuits (ICs) - Diodes - Avalanche Diodes
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Description: Integrated Circuits (ICs) - Diodes - Avalanche Diodes
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- IF: 910000 mA
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Supplier: Nexperia B.V.
Description: High performance voltage regulator diodes in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. Features and benefits Very low dynamic impedance at low currents: approximately 5 % of conventional series Hard breakdown knee Low noise
- IF: 250 mA
- Lead Type: Other
- PD: 250 milliwatts
- Package Type: SOT23, Other
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Supplier: Nexperia B.V.
Description: High performance voltage regulator diodes in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. Features and benefits Very low dynamic impedance at low currents: approximately 5 % of conventional series Hard breakdown knee Low noise
- IF: 250 mA
- Lead Type: Other
- PD: 250 milliwatts
- Package Type: SOT23, Other
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Supplier: Nexperia B.V.
Description: The PLVA2600A series consists of two high performance voltage regulator diodes with common anodes, in small SOT23 plastic SMD packages. The series consists of PLVA2650A to PLVA2668A. Features and benefits Very low dynamic impedance at low currents: approximately
- IF: 250 mA
- Lead Type: Other
- PD: 250 milliwatts
- Package Type: SOT23, Other
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Supplier: Littelfuse, Inc.
Description: The SP3522 integrates ultra low capacitance cathode-to cathode silicon avalanche diodes to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). This robust component can safely absorb repetitive ESD strikes above the maximum level
- CT: 0.1500 pF
- Configuration: Array
- RoHS Compliant: Yes
- VR: 7 volts
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Supplier: ODG (Origin Data Global)
Description: SMA Avalanche Diodes ROHS
- RoHS Compliant: Yes
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Supplier: Accuris
Description: Avalanche Breakdown Diode (ABD) Transient Voltage Suppressors
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Supplier: ODG (Origin Data Global)
Description: DIODE ARRAY AVALANCHE 90V SOT23
- Configuration: Array
- IR: 1.00E-4 mA
- Package Type: SC-59, SOT23, Other
- VF: 1 volts
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Supplier: ODG (Origin Data Global)
Description: DIODE AVALANCHE 200V 850MA MELF
- CT: 50 pF
- IR: 1.00E-3 mA
- Package Type: Other
- VF: 0.9800 volts
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Supplier: ODG (Origin Data Global)
Description: DIODE AVALANCHE 1KV 2A SOD57
- IR: 0.0050 mA
- Lead Type: Axial Leads
- Package Type: Other
- VF: 1.1 volts
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Supplier: Rochester Electronics
Description: Rectifier Diode, Avalanche
- Life Cycle Stage: Other
- Package Type: Other
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Description: Avalanche breakdown diodes used for surge protection in systems with voltages equal to or less than 1000 V rms or 1200 V dc are discussed in this standard. The avalanche breakdown diode surge suppressor is a semiconductor diode which can operate in either the
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Description: Is applicable to avalanche breakdown diodes (ABDs) which represent one type of surge protective device component (hereinafter referred to as SPDC) used in the design and construction of surge protective devices connected to low-voltage power distribution systems, transmission, and
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Supplier: Semikron, Inc.
Description: , besides the capsule (disc) diodes for high power applications. The line offers standard rectifiers with current ratings up to 6000A, fast rectifiers up to 140A, and avalanche rectifiers that allow high voltage rectification up to 5000V with single diodes and much more when
- Configuration: Single
- IF: 1000 to 6.00E6 mA
- IFSM: 60 to 60000 amps
- VRRM: 200 to 8000 volts
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Supplier: Hamamatsu Photonics
Description: Near-infrared high-sensitivity MPPC (SiPM) The S16786-0515WM is a near-infrared high-sensitivity MPPC (SiPM) designed for LiDAR applications. The smaller SPAD (Single Photon Avalanche Diode) size improves the dynamic range, and the microlens provide a high PDE (Photon Detection
- CT: 8 pF
- Configuration: Array
- Package Type: Other
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1366990-UA1M Category: Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) Mfr: SMC Diode Solutions Package: Tape & Reel Product Status: Active Package
- Diode Type: Avalanche Diodes
- IR: 0.0030 mA
- Tj: -55 to 150 C
- VF: 1.7 volts
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Supplier: PUI - Projections Unlimited, Inc.
Description: Fast Avalanche Sinterglass Diodes
- Diode Type: RF Diodes
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Supplier: CSA Group
Description: Is applicable to avalanche breakdown diodes (ABDs) which represent one type of surge protective device component (hereinafter referred to as SPDC) used in the design and construction of surge protective devices connected to low-voltage power distribution systems, transmission, and
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Supplier: Acme Chip Technology Co., Limited
Description: RECTIFIER DIODE, AVALANCHE
- Diode Applications: Rectifier Diode
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1366991-BYV98-200-TR Category: Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes Fake Threat In the Open Market: 36 pct. MSL Level: 1 (Unlimited) Mfr: Vishay General Semiconductor - Diodes Division Package: Tape & Reel
- Configuration: Single
- IR: 0.0100 mA
- Package Type: Other
- Tj: -55 to 175 C
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Supplier: Radwell International
Description: DIODE, AVALANCHE, 200V, 2 AMP, THROUGH HOLE, SOD-57. FREE 2 YEAR RADWELL WARRANTY
- Diode Type: General Purpose (PN Junction Diodes)
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Supplier: VAST STOCK CO., LIMITED
Description: Zener Diodes Low Voltage Avalanche Zener
- Diode Type: Zener Diodes
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Supplier: DigiKey
Description: DIODE AVALANCHE 1600V 1A MELF
- Tj: -50 to 150 C
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uses. The first type of diode is the avalanche diode. This diode conducts in the reverse direction when the reverse bias voltage exceeds the breakdown voltage. Its name comes from the avalanche effect that occurs when the reverse electric field across the P-N junction (read more)
Browse Diodes Datasheets for ASAP Semiconductor LLC -
Littelfuse's SC1533-01FTG bidirectional TVS diodes are fabricated in a proprietary silicon avalanche technology. They provide a high electrostatic discharge (ESD) protection level for electronic equipment. The SC1533-01FTG TVS can safely absorb repetitive ESD strikes of (read more)
Browse Diodes Datasheets for DigiKey -
, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter/compact system (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Richardson RFPD -
Hamamatsu Photonics is pleased to introduce the G15978-0020P, an exciting new InGaAs Avalanche Photodiode that redefines the possibilities in compact sensor technology. Designed specifically for researchers, engineers, and industrial applications, this new photodiode is ideally suited for (read more)
Browse Avalanche Diodes Datasheets for Hamamatsu Photonics -
Microchip's next-generation 1200V Silicon Carbide IC (SiC) diodes and 700V SiC MOSFETs with high avalanche/repetitive Unclamped Inductive Switching (UIS) 3-phase 380/400V RMS input voltage, 50 Hz or 60 Hz 140 kHz switching frequency 700V DC output voltage (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
engineers to seamlessly migrate between MOSFET packaging, making it easy to adopt Nexperia MLPAK devices. In addition, they deliver rugged performance, excellent switching capability (low spiking and ringing) and high-power density. The high avalanche rating of these MOSFETs reduces the need to use (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V.
Conduct Research Top
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FAQs > Diodes
connections. Avalanche capability. Hard or soft recovery time. Trr matching. Operation in air - 10kV axial-leaded diode. Operation in air - J-leaded MD90FF18J. Operation in air - Gull-wing MD90FF25
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Paralleling TVS Diodes for Higher Power Capability
Paralleling TVS Diodes for Higher Power Capability. Silicon Avalanche Transient Voltage Suppressors (TVS's) offer a great deal of flexibility in circuit protection. Fortunately, these devices are available in voltages ranging from 5 through 550 volts and in power ratings up to 230 kw. In addition
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Capitance and Signal Integrity (.pdf)
In previous Technical Briefs, it was introduced that Littelfuse offers a family of ESD suppression technologies including ceramic MultiLayer Varistors (MLV's), silicon (SP72x SCR/Diode and SP05xx TVS Avalanche Diode) Arrays, and polymer PulseGuard (R) suppressor products. These products perform
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JGD 1N5518 Series Datasheets. 1N5522A, 1N5545B, 1N5539, 1N5532D, 1N5523, 1N5529D, 1N5538D, 1N5544D, 1N5545A, 1N5520A, 1N5526B, 1N5546D, 1N5532, 1N5524C, 1N5534...
0.4 W, low voltage avalanche diode .
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ESD Design for Analog Circuits
3.3.4 Low-Voltage Avalanche Diodes . . . . . . . . . . . . . .
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System Level ESD Protection
146 3.3.3 High Holding Voltage HV Devices: Avalanche Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Single-Photon Imaging
Monolithic Single-Photon Avalanche Diodes : SPADs ..................
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Back cover
PROC 67 Sep 1634-1635 Bura, P.; Self-pumped parametric amplification with avalanche diodes (Ltr.).
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Noise in avalanche transit-time devices
First,it isgenerally believed that the noisiness of avalanche diodes may limit their applications and represents their majorweakness in comparison with other microwave devices.
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OSA | Monolithic active quenching and picosecond timing circuit suitable for large-area single-photon avalanche diodes
Monolithic active quenching and picosecond timing circuit suitable for large-area single-photon avalanche diodes .
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Subject Index, Jun. 1981
base-locked loop avalanche diode oscillator, 7X-band integrated circuit; Sa man, J.; T-MTT v22 n4 Apr 74464-466 (2D12) satellite multibeam antennas with active beam-forming networks; Matthews, E. W.; T-MTT v27 n12 Dec 79998-10tM (1F04 .
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Advanced Photon Counting
34 5 Single-Photon Avalanche Diodes (SPAD) ...................................................
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Semiconductor Power Devices
Both sides of the junction J3 are highly doped zones, which results in the onset of the avalanche breakdown at a small reverse bias like in an avalanche diode .