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Supplier: LCSC Electronics Technology (HK) Limited
Description: 1.6kV 3.4V@1A 1A SOD-57 Avalanche Diodes ROHS
- VF: 3.4 volts
- VR: 1,600 volts
- trr: 75 ns
- Diode Type: Avalanche Diodes
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Supplier: Allied Electronics, Inc.
Description: 2002/95/ECand WEEE 2002/96/EC Applications: For use in general-purpose rectification of power supplies, inverters, converters and freewheeling diodes application.
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Description: Integrated Circuits (ICs) - Diodes - Avalanche Diodes
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- IF: 1,620,000 mA
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Supplier: Nexperia B.V.
Description: High performance voltage regulator diodes in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. Features and benefits Very low dynamic impedance at low currents: approximately 5 % of conventional series Hard breakdown knee Low noise: approximately 10 % of conventional
- IF: 250 mA
- Tj: 150 C
- PD: 250 milliwatts
- Diode Type: Avalanche Diodes
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Supplier: Newark, An Avnet Company
Description: AVALANCHE DIODE, 130V; Repetitive Peak Reverse Voltage:130V; Average Forward Current:-; Diode Configuration:Single; Forward Voltage Max:-; Reverse Recovery Time:-; Forward Surge Current:-; Operating Temperature Max:150°C RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: AVALANCHE DIODE, 1A, 800V, SOD-57; Current Rating:1A; Diode Case Style:SOD-57; Diode Configuration:Single; Diode Type:Fast Recovery; Features:Superfast Recovery; Forward Current If:1A; Forward Current If(AV):1A; Forward Voltage:1.7V RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: AVALANCHE DIODE, 3A, 400V, SOD-64; Current Rating:3A; Diode Case Style:SOD-64; Diode Configuration:Single; Diode Type:Fast Recovery; Features:Ultrafast Recovery; Forward Current If:3A; Forward Current If(AV):3A; Forward Voltage:1.4V RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: AVALANCHE DIODE, 3A, 50V, SOD-64; Current Rating:3A; Diode Case Style:SOD-64; Diode Configuration:Single; Diode Type:Fast Recovery; Features:Ultrafast Recovery; Forward Current If:3A; Forward Current If(AV):3A; Forward Voltage:1.4V RoHS Compliant: Yes
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Supplier: Littelfuse, Inc.
Description: The SP3522 integrates ultra low capacitance cathode-to cathode silicon avalanche diodes to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). This robust component can safely absorb repetitive ESD strikes above the maximum level
- VR: 7 volts
- CT: 0.15 pF
- Features: Array, Bidirectional
- Diode Type: Avalanche Diodes, Transient Voltage Suppressor Diodes (TVS)
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Supplier: Accuris
Description: Avalanche Breakdown Diode (ABD) Transient Voltage Suppressors
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Supplier: Utmel Electronic Limited
Description: DIODE ARRAY AVALANCHE 90V SOT23
- VF: 1 volts
- IF: 150 mA
- VR: 110 volts
- trr: 50 ns
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Supplier: Utmel Electronic Limited
Description: DIODE AVALANCHE 600V 1A SOD57
- VF: 2.5 volts
- IF: 1,000 mA
- VR: 600 volts
- trr: 30 ns
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Supplier: Utmel Electronic Limited
Description: DIODE AVALANCHE 1KV 1.5A
- VF: 1.15 volts
- IF: 1,500 mA
- VR: 1,000 volts
- IR: 0.001 mA
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Supplier: Utmel Electronic Limited
Description: DIODE AVALANCHE 1000V 1A DO220AA
- VF: 1.85 volts
- IF: 1,000 mA
- VR: 1,000 volts
- IR: 0.001 mA
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Supplier: Allied Electronics, Inc.
Description: 2002/95/ECand WEEE 2002/96/EC Applications: For use in general-purpose rectification of power supplies, inverters, converters and freewheeling diodes application.
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Supplier: Allied Electronics, Inc.
Description: 2002/95/ECand WEEE 2002/96/EC Applications: For use in general-purpose rectification of power supplies, inverters, converters and freewheeling diodes application.
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Supplier: Accuris
Description: Components for Low-Voltage Surge Protective Devices - Specifications for Avalanche Breakdown Diode (ABD)
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Supplier: Marktech Optoelectronics
Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for
- Sensitivity: 50 to 55 A/W
- Spectral Response Range: 400 to 1,100 nm
- Active Area Diameter or Length: 0.20000000000000004 mm
- Active Area Height: 500.00000000000006 mm
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Supplier: Accuris
Description: Components for low-voltage surge protective devices -- Part 321: Specifications for avalanche breakdown diode (ABD)
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Description: Is applicable to avalanche breakdown diodes (ABDs) which represent one type of surge protective device component (hereinafter referred to as SPDC) used in the design and construction of surge protective devices connected to low-voltage power distribution systems, transmission, and
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Supplier: CSA Group
Description: Is applicable to avalanche breakdown diodes (ABDs) which represent one type of surge protective device component (hereinafter referred to as SPDC) used in the design and construction of surge protective devices connected to low-voltage power distribution systems, transmission, and
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Supplier: ODG (Origin Data Global)
Description: SMA Avalanche Diodes ROHS
- Diode Type: Avalanche Diodes
- RoHS Compliant: RoHS Compliant
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Supplier: RS Components, Ltd.
Description: Avalanche Sinterglass Diode Fast
- Pin Count: 2
- Diode Type: Avalanche Diodes, Zener Diodes
- Features: Other, Single
- RoHS Compliant: RoHS Compliant
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Supplier: ODG (Origin Data Global)
Description: DIODE AVALANCHE 200V 850MA MELF
- VF: 0.98 volts
- VR: 200 volts
- IR: 0.001 mA
- trr: 25 ns
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Description: Avalanche breakdown diodes used for surge protection in systems with voltages equal to or less than 1000 V rms or 1200 V dc are discussed in this standard. The avalanche breakdown diode surge suppressor is a semiconductor diode which can operate in either the
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Supplier: Rochester Electronics
Description: Rectifier Diode, Avalanche
- Diode Type: Avalanche Diodes
- Features: Other
- Diode Applications: Rectifier Diode
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Supplier: Acme Chip Technology Co., Limited
Description: DIODE AVALANCHE 600V 1A SOD57
- VF: 600 volts
- Features: Other
- Diode Applications: Rectifier Diode
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Description: DIODE AVALANCHE 400V 80A TO218
- VF: 1.6 volts
- VR: 400 volts
- Features: Other
- Diode Applications: Rectifier Diode
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Description: This standard applies to the avalanche breakdown diodes used for surge protection on systems with voltages equal to or less than 1000 V rms or 1200 V dc. The avalanche breakdown diode surge suppressor is a semiconductor diode which can operate in either the forward
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1366990-UA1M Category: Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) Mfr: SMC Diode Solutions Package: Tape & Reel Product Status: Active Package / Case: DO-214AC,
- VF: 1.7 volts
- VR: 1,000 volts
- IR: 0.003 mA
- trr: 75 ns
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Supplier: Semikron, Inc.
Description: Discrete diodes SEMIKRON offers discrete diodes in three major packaging styles; axial epoxy diodes for PCB mounting, stud screw fit diodes that are convenient for applications like welding and rotating rectifiers in brushless generators due to their robustness and simple
- IF: 1,000 to 6,000,000 mA
- VRRM: 200 to 8,000 volts
- IFSM: 60 to 60,000 amps
- Diode Type: Avalanche Diodes, General Purpose (PN Junction Diodes), Step-recovery Diodes
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uses. The first type of diode is the avalanche diode. This diode conducts in the reverse direction when the reverse bias voltage exceeds the breakdown voltage. Its name comes from the avalanche effect that occurs when the reverse electric field across the P-N junction (read more)
Browse Diodes Datasheets for ASAP Semiconductor LLC -
Littelfuse's SC1533-01FTG bidirectional TVS diodes are fabricated in a proprietary silicon avalanche technology. They provide a high electrostatic discharge (ESD) protection level for electronic equipment. The SC1533-01FTG TVS can safely absorb repetitive ESD strikes of (read more)
Browse Diodes Datasheets for DigiKey -
, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter/compact system (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Richardson RFPD -
Hamamatsu Photonics is pleased to introduce the G15978-0020P, an exciting new InGaAs Avalanche Photodiode that redefines the possibilities in compact sensor technology. Designed specifically for researchers, engineers, and industrial applications, this new photodiode is ideally suited for (read more)
Browse Avalanche Diodes Datasheets for Hamamatsu Photonics Europe -
Microchip's next-generation 1200V Silicon Carbide IC (SiC) diodes and 700V SiC MOSFETs with high avalanche/repetitive Unclamped Inductive Switching (UIS) 3-phase 380/400V RMS input voltage, 50 Hz or 60 Hz 140 kHz switching frequency 700V DC output voltage (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
engineers to seamlessly migrate between MOSFET packaging, making it easy to adopt Nexperia MLPAK devices. In addition, they deliver rugged performance, excellent switching capability (low spiking and ringing) and high-power density. The high avalanche rating of these MOSFETs reduces the need to use (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V.
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FAQs > Diodes
connections. Avalanche capability. Hard or soft recovery time. Trr matching. Operation in air - 10kV axial-leaded diode. Operation in air - J-leaded MD90FF18J. Operation in air - Gull-wing MD90FF25
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Paralleling TVS Diodes for Higher Power Capability
Paralleling TVS Diodes for Higher Power Capability. Silicon Avalanche Transient Voltage Suppressors (TVS's) offer a great deal of flexibility in circuit protection. Fortunately, these devices are available in voltages ranging from 5 through 550 volts and in power ratings up to 230 kw. In addition
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Capitance and Signal Integrity (.pdf)
In previous Technical Briefs, it was introduced that Littelfuse offers a family of ESD suppression technologies including ceramic MultiLayer Varistors (MLV's), silicon (SP72x SCR/Diode and SP05xx TVS Avalanche Diode) Arrays, and polymer PulseGuard (R) suppressor products. These products perform
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JGD 1N5518 Series Datasheets. 1N5522A, 1N5545B, 1N5539, 1N5532D, 1N5523, 1N5529D, 1N5538D, 1N5544D, 1N5545A, 1N5520A, 1N5526B, 1N5546D, 1N5532, 1N5524C, 1N5534...
0.4 W, low voltage avalanche diode .
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ESD Design for Analog Circuits
3.3.4 Low-Voltage Avalanche Diodes . . . . . . . . . . . . . .
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System Level ESD Protection
146 3.3.3 High Holding Voltage HV Devices: Avalanche Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Single-Photon Imaging
Monolithic Single-Photon Avalanche Diodes : SPADs ..................
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Back cover
PROC 67 Sep 1634-1635 Bura, P.; Self-pumped parametric amplification with avalanche diodes (Ltr.).
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Noise in avalanche transit-time devices
First,it isgenerally believed that the noisiness of avalanche diodes may limit their applications and represents their majorweakness in comparison with other microwave devices.
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OSA | Monolithic active quenching and picosecond timing circuit suitable for large-area single-photon avalanche diodes
Monolithic active quenching and picosecond timing circuit suitable for large-area single-photon avalanche diodes .
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Subject Index, Jun. 1981
base-locked loop avalanche diode oscillator, 7X-band integrated circuit; Sa man, J.; T-MTT v22 n4 Apr 74464-466 (2D12) satellite multibeam antennas with active beam-forming networks; Matthews, E. W.; T-MTT v27 n12 Dec 79998-10tM (1F04 .
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Advanced Photon Counting
34 5 Single-Photon Avalanche Diodes (SPAD) ...................................................
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Semiconductor Power Devices
Both sides of the junction J3 are highly doped zones, which results in the onset of the avalanche breakdown at a small reverse bias like in an avalanche diode .