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  • Fundamentals of Modern VLSI Devices
    Fundamentals of Modern VLSI Devices. Beginning with a thorough review of the relevant aspects of semiconductor physics, this book examines in detail the basic properties and design of CMOS and bipolar devices, and discusses the various factors that affect their performance.
  • SiC Materials and Devices, Volume 2
    SiC Materials and Devices, Volume 2. Reviewing state-of-the-art areas in SiC technology and materials and device research, this text explores the growth of SiC substrates; deep defects in different SiC polytypes; recent work on SiC JFETs; and complex, controversial issues in bipolar devices.
  • Pin-Compatible CMOS Upgrades to Bipolar LDOs
    technology from which these devices are fabricated brings inherent disadvantages, such as excessive supply current. This application note outlines the advantages of small geometry CMOS LDOs over bipolar LDOs and provides comparative test data of key regulator specifications for a popular pin-compatible
  • DC Performance Comparisons of CMOS vs Bipolar LDOs When Operating in "Dropout" (Vin = Nominal Vout) Mode (list devices)
    battery for their power source. Digital cameras contain high-speed memory ICs, which require tight voltage regulation at moderate loads to meet the required timing parameters of the system. Precision low dropout (LDO) regulator devices can be used to meet these requirements but in doing so, the LDO
  • Silicon Carbide Semiconductor Devices at Ultra-high Voltages and their Applications
    In spite of the advancements in the field of semiconductor technology, traditional power electronic systems comprising of Silicon are still being used today. Silicon-insulated bipolar transistors have always been used in voltage source conversion to create flexible ac transmission systems (FACTS
  • What are Transistors? - Categories and Features of Si Transistors
    From this section, we will discuss "Si transistors", which however include a number of categories, such as bipolar transistors and MOSFETs, depending on the manufacturing process and device structure.
  • Considerations for Driving Power MOSFETs in High-Current, Switch Mode Regulators
    The low on-resistance and high current carrying capability of power MOSFETs make them preferred switching devices in SMPS power supply design. However, designing with these devices is not as straightforward as with their bipolar counterparts. Unlike bipolar transistors, power MOSFETs have
  • A Guide to Using FETS for Sensor Applications
    In particular, low noise JFETs exhibit low input gate currents that are desirable when working with high impedance devices at the input or with high value feedback resistors (e.g., >=1M ). Operational amplifiers (op amps) with bipolar transistor input stages have much higher input noise currents

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