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Supplier: Broadcom Inc.
Description: The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. VBR=4 V, CT=0.3 pF, RD@5mA=14Ohms, Vf @ 1
- VF: 0.25 volts
- IF: 1 mA
- Tj: -65 to 150 C
- Operating Frequency: 915 to 5,800 MHz
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Supplier: Utmel Electronic Limited
Description: Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon, SOT-323, 3 PIN
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Supplier: Edmund Optics Inc.
Description: Designed for Use with the Premier Laser Diodes Wide Acceptance Angle Ideal for Particle Detection and Densitometry Designed for use with the Premier Laser Diodes, these detectors have a wide acceptance angle of 160 degrees and an amplification system, which makes them very versatile
- Operating Temperature Range: -40 to 85 C
- Laser Type: Laser Diodes
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Supplier: TE Connectivity
Description: Protection Diode : Without Coil Power Measurement : Milliwatts Coil Suppression Diode : Without High Frequency Relay Coil Power Rating (DC) (MILW) : 500 High Frequency Relay Coil Resistance (OHM) : 50 High Frequency Relay Coil Voltage Rating
- Operating Temperature: -67 to 185 F
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Diodes - 5V, 10mA, Series Connection, Automotive High Frequency Detection Schottky Diode -- RB876WFHSupplier: ROHM Semiconductor GmbH
Description: RB876WFH is a detection schottky diode with high detection efficiency and low capacitance (Ct=0.8pF) , suitable for high frequency detection. This product complies AEC-Q101 qualified.
- VF: 0.35 volts
- IF: 1,000 mA
- VR: 5 volts
- Features: Other
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Supplier: Shimadzu Corporation
Description: A frequency doubled diode laser for in-product applications. This product is the best alternative device to argon ion laser. It incorporates Shimadzu's QPM component to offer high optical conversion efficiency and high reliability. Its compact size, single power-supply
- Wavelength Range: 488 to 505 nm
- Laser Power: 10 to 20 milliwatts
- Beam Area: 1.2 mm²
- Operating Voltage: 12 volts
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Supplier: SemiGen
Description: SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly
- VF: 0.6 volts
- Diode Applications: Detector, Mixer, Modulation, Switching
- Features: Other
- Diode Type: Schottky Barrier Diodes
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Supplier: Microchip Technology, Inc.
Description: The Schottky-Rectifier-200V is a family of 200V high voltage schottky diodes available in various package options Additional Features Ultrafast recovery times Soft recovery Low leakage current Avalanche energy rated Higher switching frequency Low switching losses Low noise (EMI)
- Diode Applications: High Voltage
- Features: Other
- Diode Type: Schottky Barrier Diodes
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Supplier: Marki Microwave LLC
Description: The HLM-70ACH is a high-power GaAs Schottky diode signal limiter. It offers low insertion loss and low return loss from DC through V band. Its high power handling makes it ideal for protecting sensitive components and for applications requiring high linearity.
- Frequency Band: 0 to 70,000 MHz
- Features: Other
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Supplier: Marki Microwave LLC
Description: The HLM-67ABH is a wide DC-67 GHz bandwidth GaAs Schottky diode signal limiter featuring high +27 dBm IP3 and high 1 W power handling. It offers low 1.35 dB typical insertion loss and excellent 19 dB typical return loss from DC through V band and has a typical 1 dB compression
- Frequency Band: 0 to 67,000 MHz
- Package Type: Connectorized
- Features: Other
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Supplier: Renesas Electronics Corporation
Description: The ISL6269B IC is a Single-phase Synchronous-Buck PWM controller featuring Intersil's Robust Ripple Regulator R3™ Technology that delivers truly superior dynamic response to input voltage and output load transients. Integrated MOSFET drivers and bootstrap diode result in fewer components and
- Output Voltage (Volt): 0.6 to 3.3 volts
- Input Voltage (VIN): 7 to 25 volts
- Features: Other
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Supplier: ROHM Semiconductor GmbH
Description: Ultra small mold type package Switching Diode DAN217WM is suitable for high frequency switching applications.
- VF: 1.2 volts
- IF: 100,000 mA
- VR: 80 volts
- Diode Type: General Purpose (PN Junction Diodes)
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Supplier: Richardson RFPD
Description: The FD93 is a passive bridge diode frequency doublers, designed for use in high volume commercial arid test equipment applications. The design utilizes Schottky bridge quad diodes arid broadBand baluns to attain excellent performance. The use of high temperature
- Input Frequency Range: 2,000 to 9,000 MHz
- Conversion: 12 dB
- Input Power: 23 dBm
- Multiplying Factor: 2X
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Supplier: Renesas Electronics Corporation
Description: The ISL6615 is a high-speed MOSFET driver optimized to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. This driver, combined with an Intersil Digital or Analog multiphase PWM controller, forms a complete high frequency and
- Features: Other
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Supplier: Renesas Electronics Corporation
Description: low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the
- Features: Other
- Package Type: SOIC / SOP
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Supplier: Renesas Electronics Corporation
Description: The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate drivers are independently controlled and matched to 13ns.
- Features: Other
- Package Type: SOIC / SOP
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Supplier: ROHM Semiconductor GmbH
Description: This is the product guarantees long time support in industrial market. BD2320EFJ-LA is the 100V maximum voltage High-Side and Low-Side gate driver which can drive external Nch-FET using the bootstrap method. The driver includes a 100V bootstrap diode and independent inputs control for
- Supply Voltage: 7.5 to 14.5 volts
- Operating Temperature: -40 to 125 C
- Number of Outputs: 2
- Screening Level: Commercial
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Supplier: Skyworks Solutions, Inc.
Description: The SKY16603-632LF is a fully integrated dual PIN diode high-linearity limiter module in a surface-mount package. It is designed for use as a passive receiver protector in wireless or other RF systems for frequencies up to 6 GHz. It features a low limiting threshold, low-insertion
- Diode Applications: Limiter
- Features: Other
- Diode Type: PIN Diodes
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Supplier: Littelfuse, Inc.
Description: conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
- VCES: 600 volts
- VCE(on): 2.1 volts
- IC(max): 60 amps
- Features: IGBT, Other
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Supplier: Acme Chip Technology Co., Limited
Description: MIXER DIODE, VERY HIGH FREQUENCY
- Tj: -65 to 150 C
- Features: Other, SOD-323
- Diode Type: RF Diodes
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Supplier: Radwell International
Description: DIODE, SILICON SCHOTTKY BARRIER DIODE, RESIN MOLDED, HIGH FREQUENCY RECTIFICATION . FREE 2 YEAR RADWELL WARRANTY
- Diode Type: General Purpose (PN Junction Diodes)
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Supplier: Newark, An Avnet Company
Description: HIGH GAIN TRANSISTOR, NPN, 45V; Transistor Polarity:NPN; Collector Emitter Voltage Max:45V; Continuous Collector Current:3A; Power Dissipation:2W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:150MHz RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: HIGH GAIN TRANSISTOR, NPN, 30V; Transistor Polarity:NPN; Collector Emitter Voltage Max:30V; Continuous Collector Current:7A; Power Dissipation:3W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:100MHz RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: HIGH VOLTAGE TRANSISTOR, NPN, 20V; Transistor Polarity:NPN; Collector Emitter Voltage Max:20V; Continuous Collector Current:3A; Power Dissipation:2W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:150MHz RoHS Compliant: Yes
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Supplier: Littelfuse, Inc.
Description: conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
- VCES: 600 volts
- VCE(on): 2.5 volts
- IC(max): 75 amps
- Features: IGBT, Other
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Supplier: Newark, An Avnet Company
Description: HIGH GAIN TRANSISTOR, PNP, -120V; Transistor Polarity:PNP; Collector Emitter Voltage Max:120V; Continuous Collector Current:2A; Power Dissipation:2W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:160MHz RoHS Compliant: Yes
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Supplier: Littelfuse, Inc.
Description: conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
- VCES: 600 volts
- VCE(on): 2.7 volts
- IC(max): 70 amps
- Features: IGBT, Other
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Supplier: Littelfuse, Inc.
Description: conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
- VCES: 600 volts
- VCE(on): 3 volts
- IC(max): 60 amps
- Features: IGBT, Other
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Supplier: ODG (Origin Data Global)
Description: High Frequency / RF Relays DPDT 26.5VDC 1560 ohm w/diode
- Diode Type: RF Diodes
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Description: High performance CW, single longitudinal mode, ultra low noise 633nm lasers, narrow spectrum linewidth <50MHz,>2m coherenct length. which is used in DNA sequencing, flow cytometry, cell sorting, optical instrument, spectrum analysis, interference, measurement, holography, physics experiment,
- Wavelength Range: 633 nm
- Laser Power: 1 to 30 milliwatts
- Operating Voltage: 85 to 264 volts
- Operating Temperature Range: 10 to 35 C
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Supplier: Marki Microwave LLC
Description: The MMD-0426L is a MMIC doubler fabricated with GaAs Schottky diodes. This part operates from a 2 to 13 GHz input frequency range or a doubled output frequency range of 4 to 26 GHz. It features excellent 12 dB typical conversion loss, high 50 dB 1F and 62 dB 3F
- Input Frequency Range: 0 to 26,000 MHz
- Multiplying Factor: 2X
- Package Type: Connectorized
- Features: Other
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Supplier: MACOM
Description: MACOM’s GaAs and Silicon varactor tuning diodes provide broadband performance ranging from 10 MHz to 70 GHz. They are ideal for high Q filter and VCO electronic tuning circuits and are available in die form, flip chip, plastic and ceramic packaging. These GaAs diodes boast a
- CT: 0.025 to 54.1 pF
- Features: Other
- Diode Type: Varactor Diodes
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Supplier: Fuji Electric Corp. of America
Description: trade-off between on-voltage and switching loss compared with previous High-Speed W Series products. This enhancement contributes to energy saving and miniaturization of industrial equipment with a switching frequency of approximately 20 kHz, which is common among uninterruptible power
- VCES: 1,200 volts
- IC(max): 25 amps
- Switching Speed: 20 kHz
- TJ: 175 C
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Supplier: Infineon Technologies AG
Description: Silicon Variable Capacitance Diode Summary of Features For FM radio tuners with extended frequency band High tuning ratio at low supply voltage (car radio) Monolithic chip (common cathode) for perfect dual diode tracking Coded capacitance groups and group matching
- IF: 20 mA
- VR: 18 volts
- Features: Other, SOT23
- Diode Type: RF Diodes
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Supplier: kTB Solutions
Description: kTB High ENR Noise Sources The KTB k2600 Series High ENR Noise Source embody excellent stability with temperature and voltage. They are well suited for receiver testing, noise figure measurements, and any application requiring broad bandwidth and fast switching time. Like all KTB noise
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The MMD-1030LCSM is a MMIC doubler fabricated with GaAs Schottky diodes. It delivers operation over a 5 to 15GHz input frequency range or a doubled output frequency range of 10 to 30GHz. Featuring excellent conversion loss, superior isolations and harmonic suppressions across a broad bandwidth, the doubler is an ideal solution for test and measurement applications. Available as a 3x3 mm QFN. (read more)
Browse RF Frequency Multipliers Datasheets for Marki Microwave LLC -
Diodes Incorporated 1N4148WSF-7 Overview Fast Switching Speed: Designed for high-speed switching applications with a fast reverse recovery time. Low Forward Voltage Drop: Efficient conduction minimizes power losses and (read more)
Browse Diodes Datasheets for Win Source Electronics -
Key Features: Low Forward Voltage: Typical forward voltage drop of just 0.32V at 10mA ensures high efficiency in power-sensitive applications. Fast Switching Speed: Designed for quick operation, crucial for high-frequency (read more)
Browse Diodes Datasheets for Win Source Electronics -
the junction during automated or manual handling. The flip chip configuration is suitable for pick-and-place insertion. The high cutoff frequencies of these diodes allow use through W-band frequencies. Typical applications include single and double balanced mixers in radio (read more)
Browse Schottky Diodes Datasheets for Richardson RFPD -
The MBRS540T3G, manufactured by ON Semiconductor, is a high-performance Schottky barrier rectifier diode designed for high-frequency and energy-sensitive applications. With its low forward voltage drop and high surge current handling capacity, it offers engineers (read more)
Browse Diodes Datasheets for Win Source Electronics -
improve efficiency, the Gen 3 diodes have virtually no recovery tail, unlike ultrafast diodes. These diodes offer AC/DC PFC and DC/DC ultra-high frequency output rectification in FBPS and LLC converters for applications such as solar power inverters, energy storage systems, industrial (read more)
Browse General Purpose Diodes Datasheets for DigiKey -
high-frequency applications where energy efficiency and response speed are critical. With advantages including low leakage current, temperature stability, and reliable electrical performance, SS16 Schottky diodes are widely used in switching power supplies, voltage protection circuits, solar (read more)
Browse Diodes Datasheets for Win Source Electronics -
kTB Noise Diodes kTB noise diodes offer a symmetrical white Gaussian noise voltage distribution while maintaining a flat power spectral density versus frequency response (read more)
Browse Diodes Datasheets for kTB Solutions -
. These diodes are available in SOD-882, SC-79, and SOT-23 packages. Wiring configurations include singles, series pairs, and reverse series pairs. They may be used at frequencies up to 24 GHz. SMS7630 Series includes SMS7630-079LF, SMS7630-005LF, SMS7630-006LF, SMS7630 (read more)
Browse Diodes Datasheets for Skyworks Solutions, Inc. -
multi-mode. Single mode green lasers have a high operating temperature range of up to 85°C without any active cooling required, unlike frequency-doubled lasers. Single-mode blue and green laser diodes deliver up to 110mW with excellent efficiency, resulting in minimal temperature (read more)
Browse Diode Lasers Datasheets for World Star Tech
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AG312: Design with PIN Diodes
is a current controlled resistor at radio and microwave frequencies. It is a silicon semiconductor diode in which a high resistivity intrinsic I-region is sandwiched between a P-type and N-type region. When the PIN diode is forward biased, holes and electrons are injected into the I-region
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RF Isolator & Circulator Frequency Division in Common Areas
ZTS offers a wide variety of isolators to fit customers requirements. These are two-port devices that transmit microwave or radio frequency power in one direction only and block the signal in the opposite direction. They can be thought of as a diode for RF energy. Isolators are used to isolate
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Neutron Hardness of Photodiodes For Use in Passice Rubidium Frequency Standards (.pdf)
The photodiode used for optical detection of the atomic resonance in a passive rubidium frequency standard (RFS) is a critical component that can limit the radiation hardness of the standard at high neutronfluence levels. With the goal of obtaining a more neutron-resistant photodiode than
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DPSS
Diode Pumped Solid State (DPSS) lasers are a variation of the well known ruby, Nd:YAG, or other type of optically pumped crystal based laser where a high power IR laser diode or array of laser diodes provides the excitation instead of a flashlamp or other intense light source. Note that many DPSS
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New HF Converter for Induction Heating (.pdf)
This paper presents a new HF-converter for induction heating. The converter has a diode rectifier and automatic matching. It uses a patented timesharing principle for high frequency use of IGBTs (ref. [1]) in order to reach 350 kHz. The paper focuses on the benefits the converter structure has
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What Is A VCXO? Voltage Controlled Crystal Oscillator
in the calculation. A VCXO consists of a crystal and an oscillator circuit with a varactor diode and supporting circuitry. The high Q (Quality) factor of quartz allows a small range of frequency pulling. They also offer high performance with low jitter and low phase noise.
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Infrared Illumination for Time-of-Flight Applications
The 3D capabilities of Time-of-Flight (TOF) cameras open up new opportunities for a number of applications. One of the challenges of TOF systems is due to the high modulation frequency operating condition, which means that all parts (camera, light sources, etc.) need to be high frequency capable
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Physics of Semiconductor Devices
The authors have measured tunnel injection current for each of these high frequency diodes and incorporated into the analysis along with drift and diffusion currents.
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Microwave avalanche devices
WCOdue to the junction capacitance per unit area COalso varies as the square of the frequency since higher frequency diodes have correspondingly narrower depletion widths so that CO itself increases with frequency.
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Millimeter-Wave Integrated Circuits
Ellis also makes the crucial point that conventional high frequency diode mixers based on beam lead Schottky diodes are performance constrained due to the diode packaging parasitics.
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Fabrication and analysis of GaAs Schottky barrier diodes fabricated on thin membranes for terahertz applications
Very high frequency diodes are typically small (< 1 grn diameter) to minimize Cjo and have a highly doped epitaxial layer to minimize Rs (on the order of 1-4 x1017).
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Stepwise current oscillations in tunnel and high-frequency semiconductor diodes
Abstract—The response of tunnel and high frequency diodes to an external harmonic signal of large ampli tude has been studied.
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Mixer and Detector Diodes
This, of course, makes higher frequency diodes more susceptible to burnout than low-frequency diodes.
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Recent Advances In Millimeter Wave IMPATT Sources
Open type packages have been used for these higher frequency diodes to minimize package parasitics.
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Isolated Swiss-Forward three-phase rectifier for aircraft applications
The blue and light blue lines show the high frequency diode currents.
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Printable rectifying device using si-composite
By optimising device geometry, composite, and printing process low-cost printed, high frequency diodes (MHz–some GHz) may be viable.
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