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  • Thermal Considerations for High-Power GaN RF Amplifiers
    The reliability of high-power GaN HEMTs, employed in high power amplifiers, is driven by peak temperatures within the base semiconductor technology. As such, the design engineer must carefully consider the thermal environment presented to a high-power amplifier. This paper will examine how peak
  • High-Efficiency, Ka-band GaN Power Amplifiers
    Abstract-This paper reports the design and performance of state-of-the-art GaN MMICs and a fully packaged Ka-band SSPA. Incorporating harmonic tuning, the MMICs produce power levels up to 10 W CW with efficiencies in the high thirties (42% peak) at frequencies of 30 to 34 GHz. These results
  • RF Power: GaN Moves In for the Kill
    papers, analyst reports, and corporate brochures. After all, GaN has at least ten times the power density per millimeter of transistor gate periphery, higher operating voltages (reducing impedance transformation issues), higher efficiency, and the ability to combine high RF power output over broad
  • Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
    The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
  • GaN FETs: Why Cascode?
    GaN technology and specifically GaN-on-Silicon HEMT technology has become a key focus for power engineers over the last few years. Its promise to provide the high-power performance and high-frequency switching many applications are demanding is clear. However as commercial GaN FETs become more
  • Microwave RF: GaN Devices Raising the Output-Power Performance Bar
    Solid-state power comes in many forms, although the fastest-growing high-frequency, high-power semiconductor technology may be based on gallium nitride (GaN). GaN power transistors have long been the active-device building blocks for linear and compressed power amplifiers in L- and S-band military
  • Microwave Journal: Breakthrough GaN Device for Satcom Delivers 20 W of Power
    Qorvo's QPA1724 is a packaged high power MMIC amplifier, Ku-/K-Band, fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15).  QPA1724 is targeted for 17.3 to 21.2 GHz satcom band. It provides 20 W of saturated output power with 16 dB of large signal gain while achieving 27 percent
  • Broadening GaN FET applications with e-mode
    offering with high- (650 V) and low-voltage (100 / 150 V) e-mode (enhancement mode) devices, Nexperia provides designers with the optimum choice of efficiency and power density.
  • Wolfspeed Addresses Growing Ultra-High Frequency Radar Market With New GaN HEMT
    The device was engineered for the growing ultra-high frequency (UHF) radar market, in which defense, public safety and land mobile radio applications seek to upgrade performance and component life cycle availability by implementing GaN RF power devices. The new UHF GaN RF device delivers greater
  • Reaching New Levels of Linearity in Passive Mixers with GaN Technology
    When microwave engineers hear the words "Gallium. Nitride" (GaN), one thought usually comes to their. minds: power amplifiers. Due to its physical properties of high-breakdown voltage and high-thermal conductivity, GaN is ideally suited over its Gallium Arsenide (GaAs) counterpart
  • Embedded: 5G and GaN: What Embedded Designers Need To Know
    As described in the previous article in this series, the power demands of sub-6GHz 5G base stations are driving a shift from LDMOS amplifiers to GaN-based solutions. The high power density, efficiency and wider frequency support make it a compelling solution for many RF applications. As any
  • Microwave Journal: The RF GaN Device Market: A Roller-Coaster Ride
    In as little as five years, analysts at Yole Développement (Yole) predict the already mighty RF GaN device market will mushroom from some $900 million to $2.4 billion. Three decades of investment from defense organizations around the world has placed this high power density, high efficiency
  • Wide-Bandgap Semiconductor: The Future of SiC and GaN Technology
    While silicon is an excellent general-purpose semiconductor, its limitations when dealing with high voltages, temperature, and switching frequencies are well-documented. As the market continues its race towards more power, the industry is accelerating away from silicon in favor of WBG semiconductor
  • Wide Bandgap Semiconductor - The Future of SiC and GaN Technology
    While silicon is an excellent general-purpose semiconductor, its limitations when dealing with high voltages, temperature, and switching frequencies are well-documented. As the market continues its race towards more power, the industry is accelerating away from silicon in favor of WBG semiconductor
  • An Analysis of Current-Source Inverters Using High-Frequency WBG Switches
    semiconductors using silicon carbide (SiC) and gallium nitride (GaN), have emerged as a viable alternative. They can switch faster than their silicon-based counterparts, making them an attractive option for high-frequency PWM switching applications.
  • Miniature Strip-Connectors Designed for Rugged Circuit Density
    High density, portable, robotic, space and bodymounted electronics all share in similar requirements their design. Advanced electronic systems are rapidly evolving in their use of advance chip technologies from CMOS, and GaN, (Gallium Nitride), to MEMs technologies. These new chips are operating