Lc945p General Purpose NPN Transistors

Description: Bipolar Transistors - BJT NPN Epitaxial Transistor

• V_CEO: 50 volts
• I_C(max): 150 milliamps
• P_D: 200 milliwatts
• T_J: 150 C

Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) 1BC847BL3 is not qualified according

• I_C(max): 100 milliamps
• V_CEO: 45 volts
• V_CBO: 50 volts
• f_T: 250 MHz

Description: SS T092 GP XSTR NPN SPCL

• Features: Bulk Pack, Other
• Transistor Type: General Purpose BJT

Description: PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: 2PC4081Q Features and benefits Low current (max. 150 mA) Low voltage (max. 50 V) Low collector capacitance (typ. 2.5 pF) Applications General-purpose switching and

• h_fe: 270
• V_CEO: -50 volts
• I_C(max): -150 milliamps
• P_D: 200 milliwatts

Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) 1BC847BL3 is not qualified according

• I_C(max): 100 milliamps
• V_CEO: 30 volts
• V_CBO: 30 volts
• f_T: 250 MHz

Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) 1BC847BL3 is not qualified according

• I_C(max): 100 milliamps
• V_CEO: 30 volts
• V_CBO: 30 volts
• f_T: 250 MHz

Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q1011 BC847BL3 is not qualified according

• I_C(max): 100 milliamps
• V_CEO: 45 volts
• V_CBO: 50 volts
• f_T: 250 MHz

Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 778052-KSC945CGBU Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-226-3, TO-92-3 (TO-226AA) Power - Max: 250mW Transistor Type: NPN Frequency - Transition: 300MHz Family

• I_C(max): 0.00009999999999999999 milliamps
• T_J: 150 C
• Power Gain: 200 dB
• Operating Frequency: 300 MHz

Description: TRANSISTOR, BJT, NPN, 230V,15A,TO-3P; Transistor Polarity:NPN; Collector Emitter Voltage Max:230V; Continuous Collector Current:15A; Power Dissipation:130W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:-; MSL:- RoHS Compliant: Yes

Description: Manufacturer: Diodes Incorporated Win Source Part Number: 013415-CTA2N1P-7-F Packaging: Reel - TR Voltage Rating: 40V NPN, 50V P-Channel Current Rating: 600mA NPN, 130mA P-Channel Applications: General Purpose Mounting: SMD (SMT) Transistor Polarity: NPN,

• Polarity: NPN, P-Channel
• Features: Other
• Package Type: SOT3

Description: POWER BJT, NPN, 250V, 17A, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:250V; Continuous Collector Current:17A; Power Dissipation:250W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:25MHz

Description: BJT, NPN, 160V, SOT-23, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:160V; Continuous Collector Current:60mA; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and

• Transistor Type: General Purpose BJT
• Polarity: NPN

Description: BJT, NPN, 140V, 3A, TO-66; Transistor Polarity:NPN; Collector Emitter Voltage Max:140V; Continuous Collector Current:3A; Power Dissipation:25W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes

Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and

• Transistor Type: General Purpose BJT
• Polarity: NPN

Description: TRANSISTOR NPN SILICON 70VC IC=10A TO-3P CASE DARLNGTON DRIVER TF=1.8US

Description: Silicon Complementaryyy Transistors, Darlington Power Amp, Switch, PNP Bipolar Transistor Polarity Collector-emitter sustaining voltage: VCEO (sus) == 100 V Min @ 30 mA Monolithic construction with built-in base-emitter shunt resistor Designed for general purpose

Description: NPN general purpose transistor,BC850C

• Transistor Type: General Purpose BJT
• Polarity: NPN
• Features: Other
• Package Type: SOT23

Description: Silicon Transistor High Voltage Horizontal Output for High Definition CRT, NPN Transistor Type +150 °C maximum operating temperature High-definition color display horizontal deflection output.

Description: Silicon NPN Transistors

Description: Manufacturer: Nexperia USA Inc. Win Source Part Number: 1089500-PMC85XP,115 Packaging: Reel - TR Voltage Rating: 30V Current Rating: 2.6A Applications: General Purpose Mounting: SMD (SMT) Transistor Polarity: NPN Pre-Biased, P-Channel Categories: Discrete Semiconductor

• Transistor Type: MOSFET
• Polarity: NPN, P-Channel
• Features: Other, Tape Reel
• Package Type: SOT3

Description: TRANS NPN 50V 0.15A TO92-3

• V_CEO: 50 volts
• I_C(max): 150 milliamps
• Features: Bulk Pack, Other
• Transistor Type: General Purpose BJT

Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774473-FDMA1430JP Series: PowerTrench Packaging: Reel package Package: 6-VDFN Exposed Pad Current Rating: 2.9A Applications: Load Switch Mounting: SMD Transistor Type: NPN, P-Channel Family Name: FDMA1430JP Categories:

• Transistor Type: General Purpose BJT, MOSFET
• Polarity: NPN, P-Channel
• Features: Other, Tape Reel
• Package Type: SOT3

Description: The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the PNP

• h_fe: 60 to 100
• V_CEO: 36 volts
• V_CBO: 36 to 40 volts
• I_C(max): 10 to 20 milliamps

Description: TRANS ARRAY NPN/P-CH 60V SOT363 Product overview: CTA2N1P-7-F from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing

• T_J: -55 C
• Transistor Type: Bipolar RF Transistors
• Features: Other

Description: Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose) / Trans Darlington NPN 110V 6A 3-Pin(3+Tab) TO-3P Product overview: 2SD2493 from Sanken Electric Co., Ltd. is a Bipolar Transistor for signal amplification, switching,

• Transistor Type: Bipolar RF Transistors

Description: tolerant of installation misalignment, target geometry and composition, target run-out, vibration and air gap changes. In comparison, the RH series are single-element based, zero speed, single channel speed sensors and are an excellent choice for general purpose speed sensing. Unlike

• Operating Temperature: -40 to 257 F
• Body Shape: Cylindrical, Threaded Barrel
• Power Requirements: DC Powered
• Output: Frequency

Description: package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor,

• P_D: 580 milliwatts
• T_J: -65 C
• Transistor Type: MOSFET
• Polarity: NPN, PNP

Description: 65 V, 100 mA NPN/NPN matched double transistor

• Polarity: NPN
• Features: Other, Tape Reel

Description: Transistor, NPN, 0.6A, 75V, SOT-223

• V_CEO: 75 volts
• I_C(max): 600 milliamps
• Transistor Type: General Purpose BJT
• Polarity: NPN

Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.5A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports

• T_J: 150 C
• Transistor Type: Bipolar RF Transistors, Darlington
• Polarity: NPN
• Features: Other

Description: Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount SMT3

• Polarity: NPN
• Features: Other
• Package Type: SOT23

Description: RF TRANS NPN 6V 12GHZ SOT323

• I_C(max): 30 milliamps
• V_CEO: 6 volts
• Power Gain: 7 dB
• Noise Figure: 1.5 to 2.5 dB

Description: Trans GP BJT NPN/PNP 40V 0.6A Automotive 6-Pin TSOP T/R

• I_C(max): 600 milliamps
• P_D: 540 milliwatts
• T_J: -65 to 150 C
• Number of Transistors in the Chip: 2

Description: 100V 750@3V,3A NPN 10A 70W TO-220 Darlington Transistors ROHS

• h_fe: 750
• V_CEO: 100 volts
• I_C(max): 10,000 milliamps
• P_D: 70,000 milliwatts