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Supplier: Linear Systems
Description: PICO Ampere Diodes
- Diode Applications: Low Leakage
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Supplier: Linear Systems
Description: MINIATURE/NON MAGNETIC 8-PIN DFN PACKAGE LOW LEAKAGE DIODE
- Diode Applications: Low Leakage
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Supplier: Linear Systems
Description: The ID100 Series Monolithic Dual, Pico Amp Low Leakage Diodes is a direct replacement for the Intersil equivalent part. It is ideal for Pico Amp, Ultra Low Leakage, Protection Diode Applications. Available in TO-71 6L ROHS and TO-78 6L ROHS package, as well
- Diode Applications: Low Leakage
- RoHS Compliant: Yes
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Supplier: Linear Systems
Description: The JPAD Series Single, Pico Amp, Low Leakage Diodes is a direct replacement for the Siliconix-Vishay equivalent part. It is ideal for Pico Amp, Ultra Low Leakage, Protection Diode Applications. Available in TO-92 2L ROHS, TO-72 3L ROHS, TO-18 2L ROHS, and
- Diode Applications: Low Leakage
- RoHS Compliant: Yes
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Supplier: PANJIT SemiConductor
Description: Low series resistance, low capacitance, available in ultra small packages
- Diode Applications: Switching, Low Leakage
- Diode Type: General Purpose (PN Junction Diodes)
- IR: 5.00E-6 mA
- RoHS Compliant: Yes
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Supplier: Nexperia B.V.
Description: Epitaxial, medium-speed switching, double diode in a small SOT23 Surface-Mounted Device (SMD) plastic package. The diodes are connected in series. Features and benefits Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 us
- Diode Applications: Low Leakage
- IF: 160 mA
- IR: 5.00E-6 mA
- VF: 1 to 1000 volts
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Supplier: PANJIT SemiConductor
Description: Low series resistance, low capacitance, available in ultra small packages
- Diode Applications: Switching, Low Leakage
- Diode Type: General Purpose (PN Junction Diodes)
- IF: 1 mA
- IR: 1.00E-4 mA
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Supplier: Nexperia B.V.
Description: Low leakage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. Features and benefits High switching speed: trr = 0.8 µs Low leakage current: IR = 3 pA Repetitive peak reverse voltage
- Diode Applications: Switching, Low Leakage
- IF: 215 mA
- IR: 5.00E-6 mA
- RoHS Compliant: Yes
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Supplier: Nexperia B.V.
Description: Single low leakage current switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package. Features and benefits Switching time typical: trr = 0.8 µs Low leakage current typical: IR
- Diode Applications: Switching, Low Leakage
- IF: 325 mA
- IR: 5.00E-6 mA
- RoHS Compliant: Yes
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Supplier: Nexperia B.V.
Description: Low-leakage diode in an ultra small DFN1006BD-2 (SOD882BD) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Features and benefits Switching time: max. trr = 3 µs Low leakage current: max. IR = 5 n
- Diode Applications: Switching, Low Leakage
- IR: 5.00E-6 mA
- RoHS Compliant: Yes
- VF: 1 to 1000 volts
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Supplier: Broadcom Inc.
Description: General purpose Schottky diode in a broad range of package configurations. Optimised for High voltage clamp or analog DC switch applications. For low breakdown applciations, like detectors or mixers, please refer to HSMS-282X. For low flicker (1/F) noise applications refer to
- Diode Applications: Switching, Detector, Mixer
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 1 mA
- IR: 2.00E-4 mA
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Supplier: Broadcom Inc.
Description: General purpose Schottky diode in a broad range of package configurations. Optimised for High voltage clamp or analog DC switch applications. For low breakdown applciations, like detectors or mixers, please refer to HSMS-282X. For low flicker (1/F) noise applications refer to
- Diode Applications: Switching, Detector, Mixer
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 1 mA
- IR: 2.00E-4 mA
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Supplier: ROHM Semiconductor USA, LLC
Description: BAV199HM is high reliability and small mold type diode for general switching.
- IF: 150000 mA
- RoHS Compliant: Yes
- Tj: -65 to 150 C
- VF: 1.3 volts
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Supplier: ROHM Semiconductor USA, LLC
Description: BAW156HM is high reliability and small mold type diode for general switching.
- IF: 150000 mA
- RoHS Compliant: Yes
- Tj: -65 to 150 C
- VF: 1.3 volts
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Supplier: Broadcom Inc.
Description: General purpose Schottky diode in a broad range of package configurations. Optimised for High voltage clamp or analog DC switch applications. For low breakdown applciations, like detectors or mixers, please refer to HSMS-282X. For low flicker (1/F) noise applications refer to
- Diode Applications: Switching, Detector, Mixer
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 1 mA
- IR: 2.00E-4 mA
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Supplier: Broadcom Inc.
Description: General purpose Schottky diode in a broad range of package configurations. Optimised for High voltage clamp or analog DC switch applications. For low breakdown applciations, like detectors or mixers, please refer to HSMS-282X. For low flicker (1/F) noise applications refer to
- Diode Applications: Switching, Detector, Mixer
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 1 mA
- IR: 2.00E-4 mA
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Supplier: ROHM Semiconductor USA, LLC
Description: 1SS380VM is Low IR Switching Diode for general switching.
- IF: 100000 mA
- RoHS Compliant: Yes
- Tj: -55 to 150 C
- VF: 1.2 volts
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Supplier: Rochester Electronics
Description: High Conductance Low Leakage Diode
- Diode Applications: Low Leakage
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Supplier: Rochester Electronics
Description: High Conductance Low Leakage Diode
- Diode Applications: Low Leakage
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Supplier: Rochester Electronics
Description: Low Leakage Diode
- Diode Applications: Low Leakage
- RoHS Compliant: Yes
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Supplier: ROHM Semiconductor GmbH
Description: BAV170HY is high reliability and low IR diodes for general switching.
- Diode Type: General Purpose (PN Junction Diodes)
- IF: 150000 mA
- RoHS Compliant: Yes
- VF: 1.25 volts
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Supplier: ROHM Semiconductor GmbH
Description: BAS116HY is high reliability and low IR diodes for general switching.
- Diode Type: General Purpose (PN Junction Diodes)
- IF: 150000 mA
- RoHS Compliant: Yes
- VF: 1.25 volts
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Supplier: ROHM Semiconductor GmbH
Description: BAW156HY is high reliability and low IR diodes for general switching.
- Diode Type: General Purpose (PN Junction Diodes)
- IF: 150000 mA
- RoHS Compliant: Yes
- VF: 1.25 volts
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Supplier: ROHM Semiconductor GmbH
Description: BAV199UM is high reliability and low IR diodes for general switching.
- Diode Type: General Purpose (PN Junction Diodes)
- IF: 150000 mA
- RoHS Compliant: Yes
- VF: 1.25 volts
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Supplier: Littelfuse, Inc.
Description: The Breakover Gen1 series offers Breakover diodes in various voltage ranges with fast turn on behaviour, low temperature dependancy and low leakage currents.
- Diode Applications: Power Diode
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Supplier: Utmel Electronic Limited
Description: PMEG60T30ELR - 60 V, 3 A low leakage current Trench MEGA Schottky barrier rectifier
- Diode Type: Schottky Barrier Diodes, Other
- RoHS Compliant: Yes
- VF: 0.6200 volts
- trr: 17 ns
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Supplier: Littelfuse, Inc.
Description: /50 ns) Surge Tolerance, IEC 6100-4- 5 2nd Edition, 7A (8/20us) Low maximum leakage current of 20 nA at 5 V Halogen-free, lead-free, and RoHS-compliant Moisture Sensitivity Level (MSL -1)
- CT: 7 pF
- Diode Type: General Purpose (PN Junction Diodes), Transient Voltage Suppressor Diodes (TVS)
- RoHS Compliant: Yes
- Tj: -40 to 125 C
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Supplier: MACOM
Description: Very Low Voltage, Low Leakage Sharp Knee, Low Impedance Low Current: 250 µA - Low Noise Ultra-Low Current: 50 µA – Low Leakage
- Diode Type: Zener Diodes
- IR: 4.00E-7 to 5.00E-5 mA
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Supplier: Littelfuse, Inc.
Description: The Schottky Low leakage series offers various packages with improved leakage currents and breakdown voltages up to 200V.
- Package Type: Other
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Supplier: Marki Microwave LLC
Description: The HLM-8011 is a high-power GaAs Schottky diode signal limiter featuring high IP3 and high power handling. It offers low insertion loss and low return loss from DC through Ka band and has a typical 1dB compression point of +9dBm. Its low flat leakage makes it
- Frequency Band: 0.0 to 30000 MHz
- Package Type: Other
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Zener Diodes - Low leakage Uni-directional Surface Mount 400 W TVS Diode in SOD-123FL -- SMF4L54AT1GSupplier: Littelfuse, Inc.
Description: The SMF4L-T1G low leakage series is designed to protect sensitive systems or components from high voltage, high energy transients. It offers a fast response time, low Zener impedance, high surge and excellent clamping capabilities. Because of its small size, it is ideal for use
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE, TYPES 1N3595, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
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Supplier: ODG (Origin Data Global)
Description: 60V LOW LEAKAGE TRENCH RECTIFIER
- Diode Applications: Rectifier Diode
- IR: 0.0500 mA
- VF: 0.6800 volts
- VR: 60 volts
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Description: 60V LOW LEAKAGE TRENCH RECTIFIER
- Diode Applications: Rectifier Diode
- VF: 0.6000 volts
- VR: 60 volts
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Supplier: PUI - Projections Unlimited, Inc.
Description: Small size Exceptionally low leakage Avalanche characteristics
- Diode Applications: Rectifier Diode
- VR: 3000 volts
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Featured Products Top
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Good-Ark Semiconductor’s GSCLAMP0524PE is a quad TVS array designed to protect sensitive high-speed data lines from ESD, cable discharge events, and electrical fast transients. Featuring ultra-low 0.2pF line-to-line capacitance and low leakage current, it maintains high signal integrity in (read more)
Browse Transient Voltage Suppressor Diodes (TVS) Datasheets for New Yorker Electronics Co., Inc. -
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Browse Diodes Datasheets for DigiKey -
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Browse Diodes Datasheets for Win Source Electronics -
in high-speed circuits. Why Choose ESDA6V1-5W6? The ESDA6V1-5W6 TVS diode stands out due to its combination of high power rating, low leakage current, and bidirectional protection. Its compact size makes it a versatile choice for various applications, ensuring (read more)
Browse Diodes Datasheets for Win Source Electronics -
Vishay's 16 Gen 3 1,200 V silicon-carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) design. They also combine high surge current robustness with low forward-voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power (read more)
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Used extensively in power management systems. Ideal for digital circuits requiring fast switching. Suitable for signal processing applications due to low leakage current and high-speed operation. Benefits: Small form (read more)
Browse Diodes Datasheets for Win Source Electronics -
. Another type of diode is the Schottky diode, constructed from a metal-to-metal semiconductor contact and featuring a lower forward voltage drop than that of traditional P-N junction diodes. They can be used as a low-loss rectifier, but the reverse leakage current of these (read more)
Browse Diodes Datasheets for ASAP Semiconductor LLC -
and an average rectified current of 3A, this diode ensures robust operation in power management systems, industrial machinery, consumer electronics, automotive, and portable devices. Its low forward voltage drop of 450mV @ 3A minimizes energy loss, making it highly effective in energy (read more)
Browse Diodes Datasheets for Win Source Electronics -
Diodes Incorporated 1N4148WSF-7 Overview Fast Switching Speed: Designed for high-speed switching applications with a fast reverse recovery time. Low Forward Voltage Drop: Efficient conduction minimizes power losses and (read more)
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Discover the features and specifications of the MBRS340T3G Schottky Barrier Rectifier from ON Semiconductor, designed for efficiency and reliability in a wide range of electronic applications. This rectifier is highly favored in scenarios requiring low forward voltage drop and fast switching (read more)
Browse Diodes Datasheets for Win Source Electronics
Conduct Research Top
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Characterization Techniques for Miniature Low Power X-Ray Tubes
output stability a spotstability. test is performed. Relative standard deviations of less than 1% are typical. Leakage current must be very low since operating conditions are typically less than 10. µA of emission current. In the case of arcing tubes the measurement of leakage current
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* Optimizing High-Voltage Common Mode Rejection Performance of the APCL-x6xL Ultra-Low Power Optocouplers
The ACPL-x6xL products are optically coupled ultra-low. power 10 MBd digital CMOS opto couplers that operate. with low power consumption, especially when the light. emitting diode (LED) operates at low current. When. a current is applied to drive the LED, common mode. rejection (CMR) can be aff
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Techniques to Increase High-Voltage Common Mode Rejection (HVCMR)
The ACPL-M61L is an optically coupled ultra-low power. 10 MBd digital CMOS optocouplers that operates with. low power consumption, especially when the light. emitting diode (LED) operates at low current. It is off ered. in a compact SO-5 package. When a low current is used. to drive the LED, common
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Fairchild Semiconductor 1N456 Series Datasheets. 1N458, FTSO5137, 1N461A, FDLL456A, FDLL458A, 1N456ATR, PN5137, FDLL459, FTSO5139, FDLL482B, 1N484B, FTSO5135, ...
Low leakage diode .
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Low leakage diode .
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Circuit requirements for MEMS-based mechanical-to-electrical power conversion
Keywords: Energy scavenging, microwatt level power, vibration, piezoelectric effect, wireless sensors, PVDF, ultra- low leakage diode , high energy conversion efficiency .
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High Conductance Low Leakage Diode .
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bav199 datasheet : Datasheets for Electronic Components and Semiconductors
85V; 140mA very low leakage diode .
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High Conductance Low Leakage Diode in 3-pin SOT-23 package.
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“No cost” reduced-leakage Schottky diode by ion implantation
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FLLD261 datasheet - HIGH CONDUCTANCE LOW LEAKAGE DIODE : Datasheets for Electronic Components and Semiconductors
HIGH CONDUCTANCE LOW LEAKAGE DIODE .
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