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Supplier: Linear Systems
Description: MINIATURE/NON MAGNETIC 8-PIN DFN PACKAGE LOW LEAKAGE DIODE
- Diode Applications: Low Leakage
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Supplier: Nexperia B.V.
Description: Epitaxial medium-speed switching diode with a low leakage current in a small SOT23 plastic SMD package. Features and benefits Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 us Continuous reverse voltage: max. 75 V Repetitive peak
- VF: 1,000 to 1 volts
- IF: 215 mA
- VR: 75 volts
- IR: 0.000005 mA
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Supplier: Nexperia B.V.
Description: Epitaxial, medium-speed switching, double diode in a small SOT23 Surface-Mounted Device (SMD) plastic package. The diodes are connected in series. Features and benefits Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 us Continuous reverse
- VF: 1,000 to 1 volts
- IF: 160 mA
- VR: 75 volts
- IR: 0.000005 mA
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Supplier: Nexperia B.V.
Description: Dual common cathode low-leakage diode encapsulated in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package. Features and benefits High switching speed: trr = 0.8 µs Low leakage current: IR = 3 pA Repetitive peak reverse voltage
- VF: 1,000 to 1 volts
- IF: 320 mA
- VR: 75 volts
- IR: 0.000005 mA
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Supplier: Nexperia B.V.
Description: Epitaxial, medium-speed switching diode with a low-leakage current encapsulated in a small SOD323 SMD plastic package. Features and benefits Plastic SMD package Low-leakage current: typ. 3 pA Switching time: typ. 0.8 us Continuous reverse voltage: max. 75 V
- Diode Applications: Low Leakage, Switching
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Supplier: PANJIT SemiConductor
Description: Low series resistance, low capacitance, available in ultra small packages
- VF: 1.25 volts
- VR: 100 volts
- IR: 0.000005 mA
- trr: 3,000 ns
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Supplier: Newark, An Avnet Company
Description: LOW LEAKAGE DIODE 150V 200mA DO-35; Diode Configuration:Single; Repetitive Peak Reverse Voltage:150V; Average Forward Current:200mA; Forward Voltage Max:1.15V; Reverse Recovery Time:-; Forward Surge Current:1A; Diode Case Style:DO-35RoHS Compliant: Yes
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Supplier: Broadcom Inc.
Description: General purpose Schottky diode in a broad range of package configurations. Optimised for High voltage clamp or analog DC switch applications. For low breakdown applciations, like detectors or mixers, please refer to HSMS-282X. For low flicker (1/F) noise applications refer to
- VF: 0.4 volts
- IF: 1 mA
- IR: 0.0002 mA
- Tj: 150 C
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Supplier: PANJIT SemiConductor
Description: Low series resistance, low capacitance, available in ultra small packages
- VF: 0.7 volts
- IF: 1 mA
- VR: 250 volts
- IR: 0.0001 mA
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Supplier: ROHM Semiconductor USA, LLC
Description: BAW156HM is high reliability and small mold type diode for general switching.
- VF: 1.3 volts
- IF: 150,000 mA
- VR: 80 volts
- Tj: -65 to 150 C
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Supplier: Littelfuse, Inc.
Description: The Breakover Gen1 series offers Breakover diodes in various voltage ranges with fast turn on behaviour, low temperature dependancy and low leakage currents.
- Features: Other
- Diode Applications: Power Diode
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Supplier: ROHM Semiconductor GmbH
Description: BAV199FM is a switching diode featuring low IR. It is a highly reliable product suitable for general switching applications.
- VF: 1.25 volts
- IF: 150,000 mA
- VR: 80 volts
- Diode Type: General Purpose (PN Junction Diodes)
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Supplier: ROHM Semiconductor GmbH
Description: ROHM's switching diodes, including diode arrays, are available in high-reliability packages and stable supply for various applications.
- VF: 1 volts
- IF: 10,000 mA
- VR: 20 volts
- Diode Type: General Purpose (PN Junction Diodes)
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Supplier: ROHM Semiconductor GmbH
Description: BAV199UM is high reliability and low IR diodes for general switching.
- VF: 1.25 volts
- IF: 150,000 mA
- VR: 80 volts
- Diode Type: General Purpose (PN Junction Diodes)
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Supplier: ROHM Semiconductor GmbH
Description: ROHM's switching diodes, including diode arrays, are available in high-reliability packages and stable supply for various applications.
- VF: 1.2 volts
- IF: 100,000 mA
- VR: 35 volts
- Diode Type: General Purpose (PN Junction Diodes)
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Supplier: ROHM Semiconductor USA, LLC
Description: BAW156HMFH is high reliability and small mold type diode for general switching.
- VF: 1.3 volts
- IF: 150,000 mA
- VR: 80 volts
- Tj: -65 to 150 C
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Supplier: Accuris
Description: DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE, TYPES 1N3595, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
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Supplier: Marki Microwave LLC
Description: The HLM-8011 is a high-power GaAs Schottky diode signal limiter featuring high IP3 and high power handling. It offers low insertion loss and low return loss from DC through Ka band and has a typical 1dB compression point of +9dBm. Its low flat leakage makes it
- Frequency Band: 0 to 30,000 MHz
- Package Type: Connectorized
- Features: Other
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Supplier: Allied Electronics, Inc.
Description: Circuit modules provide ratings up to 42.5 amps. Available in three standard bridge circuits and an AC switch version. Features: Low Profile Designed for PCB Connections UL Recognized
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Supplier: MACOM
Description: Very Low Voltage, Low Leakage Sharp Knee, Low Impedance Low Current: 250 µA - Low Noise Ultra-Low Current: 50 μA – Low Leakage
- IR: 0.00000040000000000000003 to 0.00005 mA
- Features: Other
- Diode Type: Zener Diodes
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE, TYPES 1N3595, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
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Supplier: Utmel Electronic Limited
Description: PMEG60T30ELR - 60 V, 3 A low leakage current Trench MEGA Schottky barrier rectifier
- VF: 0.62 volts
- trr: 17 ns
- Features: Other, SOD-123
- RoHS Compliant: RoHS Compliant
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Supplier: New Yorker Electronics Co., Inc.
Description: Diode, Low Leakage, 200mA, 75V, SOD-523
- IF: 200 mA
- Diode Applications: Low Leakage
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Supplier: Allied Electronics, Inc.
Description: Circuit modules provide ratings up to 42.5 amps. Available in three standard bridge circuits and an AC switch version. Features: Low Profile Designed for PCB Connections UL Recognized
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Supplier: Broadcom Inc.
Description: The ACPL-M49U is a single channel, high temperature, high CMR, 20kBd digital optocoupler, configurable as a low power, low leakage phototransistor, specifically for use in industrial applications. The SO-5 JEDEC registered (MO-155) package outline is surface mountable. This
- Collector Emitter Breakdown Voltage: 5 volts
- Operating Temperature: -40 to 125 C
- Input: DC
- Output: Phototransistor
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Supplier: Broadcom Inc.
Description: The ACPL-M49T is a single channel, high temperature, high CMR, 20kBd digital optocoupler, configurable as a low power, low leakage phototransistor, specifically for use in the automotive applications. The SO-5 JEDEC registered (MO-155) package outline is surface mountable. This
- Isolation Voltage: 1,500 volts
- Operating Temperature: -40 to 125 C
- Input: DC
- Output: Phototransistor
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Supplier: RS Components, Ltd.
Description: High Conductance Low Leakage Diode DO-35
- Diode Applications: Low Leakage, Switching
- RoHS Compliant: RoHS Compliant
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Supplier: RS Components, Ltd.
Description: Diode Dual Com.Cathode Low Leakage SOT23
- trr: 1,500 ns
- Tj: 150 C
- Diode Applications: Low Leakage, Rectifier Diode
- Features: Other, SOT23
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Supplier: Rochester Electronics
Description: High Conductance Low Leakage Diode
- Diode Applications: Low Leakage
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Supplier: ROHM Semiconductor USA, LLC
Description: RB218BM200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle
- VF: 0.88 volts
- IF: 10,000 mA
- VR: 200 volts
- IR: 0.01 mA
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Supplier: Infineon Technologies AG
Description: ESD259-B1-W0201 | Multi purpose diodes for ESD protection ESD202-B1-CSP01005 | Multi purpose diodes for ESD protection ESD200-B1-CSP0201 | Multi purpose diodes for ESD protection ESDF200-B1-W0201 | Multi purpose diodes for ESD protection ESD245-B1-W0201 | Multi purpose
- IR: 0.0000005 to 0.0001 mA
- Diode Applications: Protector
- RoHS Compliant: RoHS Compliant
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Supplier: VAST STOCK CO., LIMITED
Description: Schottky Diodes & Rectifiers Low Vf Low Leakage Schottky Rectifier
- Features: Other
- Diode Type: Schottky Barrier Diodes
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Supplier: AVX Corporation
Description: TVS Diodes The SMAJ, SMBJ and SMCJ series of TVS diodes are a popular format of general purpose transient voltage suppression diodes. These components are based on low leakage, high reliable, low cost glass passivated chip rectifier technology.
- IFSM: 40 to 200 amps
- VBR: 5 to 440 volts
- Diode Applications: Protector
- Features: SMA, SMB, Single
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Supplier: DigiKey
Description: 200MA 200V SMD DIODE-LOW LEAKAGE
- Tj: -65 to 150 C
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, DIODE, RECTIFIER, 1 ELEMENT, 0.15A, 30V V(RRM), SILICON, DO-7, LOW LEAKAGE SWITCHING DIODE (GLASS PACKAGE). FREE 2 YEAR RADWELL WARRANTY
- Diode Type: General Purpose (PN Junction Diodes)
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Good-Ark Semiconductor’s GSCLAMP0524PE is a quad TVS array designed to protect sensitive high-speed data lines from ESD, cable discharge events, and electrical fast transients. Featuring ultra-low 0.2pF line-to-line capacitance and low leakage current, it maintains high signal integrity in (read more)
Browse Transient Voltage Suppressor Diodes (TVS) Datasheets for New Yorker Electronics Co., Inc. -
The TDK Corporation has expanded its ultra-low clamping voltage TVS diode lineup from EPCOS with three models in the SD0201 series (read more)
Browse Diodes Datasheets for DigiKey -
high-frequency applications where energy efficiency and response speed are critical. With advantages including low leakage current, temperature stability, and reliable electrical performance, SS16 Schottky diodes are widely used in switching power supplies, voltage protection circuits, solar (read more)
Browse Diodes Datasheets for Win Source Electronics -
-frequency applications and minimizing switching losses. Low Leakage Current: Enhances circuit efficiency and reliability with its low reverse leakage current. Surface Mount Package: SOT-23 package allows easy integration into space-constrained designs (read more)
Browse Diodes Datasheets for Win Source Electronics -
Vishay's 16 Gen 3 1,200 V silicon-carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) design. They also combine high surge current robustness with low forward-voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power (read more)
Browse General Purpose Diodes Datasheets for DigiKey -
Used extensively in power management systems. Ideal for digital circuits requiring fast switching. Suitable for signal processing applications due to low leakage current and high-speed operation. Benefits: Small form (read more)
Browse Diodes Datasheets for Win Source Electronics -
. Another type of diode is the Schottky diode, constructed from a metal-to-metal semiconductor contact and featuring a lower forward voltage drop than that of traditional P-N junction diodes. They can be used as a low-loss rectifier, but the reverse leakage current of these (read more)
Browse Diodes Datasheets for ASAP Semiconductor LLC -
and an average rectified current of 3A, this diode ensures robust operation in power management systems, industrial machinery, consumer electronics, automotive, and portable devices. Its low forward voltage drop of 450mV @ 3A minimizes energy loss, making it highly effective in energy (read more)
Browse Diodes Datasheets for Win Source Electronics -
Diodes Incorporated 1N4148WSF-7 Overview Fast Switching Speed: Designed for high-speed switching applications with a fast reverse recovery time. Low Forward Voltage Drop: Efficient conduction minimizes power losses and (read more)
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Discover the features and specifications of the MBRS340T3G Schottky Barrier Rectifier from ON Semiconductor, designed for efficiency and reliability in a wide range of electronic applications. This rectifier is highly favored in scenarios requiring low forward voltage drop and fast switching (read more)
Browse Diodes Datasheets for Win Source Electronics
Conduct Research Top
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Characterization Techniques for Miniature Low Power X-Ray Tubes
output stability a spotstability. test is performed. Relative standard deviations of less than 1% are typical. Leakage current must be very low since operating conditions are typically less than 10. µA of emission current. In the case of arcing tubes the measurement of leakage current
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* Optimizing High-Voltage Common Mode Rejection Performance of the APCL-x6xL Ultra-Low Power Optocouplers
The ACPL-x6xL products are optically coupled ultra-low. power 10 MBd digital CMOS opto couplers that operate. with low power consumption, especially when the light. emitting diode (LED) operates at low current. When. a current is applied to drive the LED, common mode. rejection (CMR) can be aff
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Techniques to Increase High-Voltage Common Mode Rejection (HVCMR)
The ACPL-M61L is an optically coupled ultra-low power. 10 MBd digital CMOS optocouplers that operates with. low power consumption, especially when the light. emitting diode (LED) operates at low current. It is off ered. in a compact SO-5 package. When a low current is used. to drive the LED, common
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Fairchild Semiconductor 1N456 Series Datasheets. 1N458, FTSO5137, 1N461A, FDLL456A, FDLL458A, 1N456ATR, PN5137, FDLL459, FTSO5139, FDLL482B, 1N484B, FTSO5135, ...
Low leakage diode .
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Fairchild Semiconductor 1N483 Series Datasheets. 1N459A, PN5137, FDLL459, 1N485B, 1N462A, 1N458, FTSO5139, FDLL462A, FDLL485B, 1N457A, FTSO5135, FTSO5137, PN51...
Low leakage diode .
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Circuit requirements for MEMS-based mechanical-to-electrical power conversion
Keywords: Energy scavenging, microwatt level power, vibration, piezoelectric effect, wireless sensors, PVDF, ultra- low leakage diode , high energy conversion efficiency .
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Page 1. Semiconductor parts with 199 in root number
DUAL SURFACE MOUNT LOW LEAKAGE DIODE .
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Page 15. Semiconductor parts with 300 in root number
High Conductance Low Leakage Diode .
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ESD: Circuits and Devices
Low leakage diode string designs using triple-well technologies for RF ESD applications.
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bav199 datasheet : Datasheets for Electronic Components and Semiconductors
85V; 140mA very low leakage diode .
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Fairchild Semiconductor MMBD1503 Series Datasheets. MMBD1503A_D87Z, MMBD1503, MMBD1501A_NL, MMBD1501A_D87Z, MMBD1503A_NL, MMBD1504A_D87Z, MMBD1503A, MMBD1504A_...
High Conductance Low Leakage Diode in 3-pin SOT-23 package.
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“No cost” reduced-leakage Schottky diode by ion implantation
Thus, low turn-on, low leakage diodes were produced with no extra cost to an existing BiCMOS pro- cess.
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FLLD261 datasheet - HIGH CONDUCTANCE LOW LEAKAGE DIODE : Datasheets for Electronic Components and Semiconductors
HIGH CONDUCTANCE LOW LEAKAGE DIODE .