Low Noise JFET

Description: EOC offers a variety of silicon photodiode options from IFW Optronics: Silicon Photodiodes with an Integrated Low Noise JFET Amplifier Quadrant Photodiodes

• Spectral Response Range: 400 to 1,100 nm
• Active Area Diameter or Length: 4.800000000000001 to 7.000000000000001 mm
• Photodiode Spectral Response: IR, Visible
• Photodiode Package: Leaded, Through Hole Technology (THT)

Description: The ISL28110, ISL28210, are single and dual JFET amplifiers featuring low noise, high slew rate, low input bias current and offset voltage, making them the ideal choice for high impedance applications where precision and low noise are important. The

• Supply Voltage (V_S): 9 to 40 volts
• Supply Current (I_S): 2.5500000000000003 milliamps
• Input Offset Voltage (V_OS): 0.3 millivolts
• Input Bias Current (I_BIAS): 0.0000003 to 0.000002 µA

Description: Low-Noise JFET-Input Operational Amplifier 8-SOIC 0 to 70

• Supply Voltage (V_S): 7 to 36 volts
• Input Offset Voltage (V_OS): 6 millivolts
• Quiescent Current (I_Q): 2,500 microamps
• CMRR: 75 dB

Description: Low-Noise JFET-Input Operational Amplifier 8-SOIC 0 to 70

• Supply Voltage (V_S): 7 to 36 volts
• Input Offset Voltage (V_OS): 3 millivolts
• Quiescent Current (I_Q): 2,500 microamps
• CMRR: 75 dB

Description: Low-Noise JFET-Input Operational Amplifier 14-SO 0 to 70

• Supply Voltage (V_S): 7 to 36 volts
• Input Offset Voltage (V_OS): 6 millivolts
• Quiescent Current (I_Q): 2,500 microamps
• CMRR: 75 dB

Description: Low-Noise JFET-Input Operational Amplifier 14-SOIC 0 to 70

• Supply Voltage (V_S): 7 to 36 volts
• Input Offset Voltage (V_OS): 3 millivolts
• Quiescent Current (I_Q): 2,500 microamps
• CMRR: 75 dB

Description: Low Noise JFET Input Operational Amplifier, Supply Voltage ±18 V Low power consumption Wide common mode and differential voltage ranges Low input bias and offset currents The JFET-input Operational amplifiers in the TL07x series are similar to the TL08x

Description: AMPLIFIER; LOW NOISE JFET INPUT OPERATIONAL; + 18 V; 1.4 MA (TYP.); + 30 V

Description: JFET AMPLIFIERS-DUALS - LOW NOISE, MONOLITHIC N-CH

Description: MICROCIRCUIT, LINEAR, LOW NOISE, PRECISION, RAIL TO RAIL OUTPUT, JFET DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

Description: IC, OP AMP, JFET LOW NOISE, DIP8; No. of Amplifiers:1 Amplifier; Bandwidth:4MHz; Slew Rate:13V/µs; Supply Voltage Range:7V to 36V; Amplifier Case Style:DIP; No. of Pins:8Pins; Operating Temperature Min:0°C; Operating Temperature RoHS Compliant: Yes

Description: OP AMP, JFET-INPUT LOW NOISE, SOIC8; No. of Amplifiers:1 Amplifier; Bandwidth:3MHz; Slew Rate:13V/µs; Supply Voltage Range:7V to 36V; Amplifier Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Min:0°C; Operating Temperature RoHS Compliant: Yes

Description: ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET

• Transistor Type: JFET

Description: Excalibur Low-Noise High-Speed JFET-Input Quad Operational Amplifier 16-SOIC 0 to 70

• Supply Voltage (V_S): 5 volts
• Supply Current (I_S): 6.5 milliamps
• Input Offset Voltage (V_OS): 3 millivolts
• Input Bias Current (I_BIAS): 0.005 µA

Description: LOW NOISE, LOW CAPACITANCE SINGLE P-CHANNEL JFET

• Transistor Type: JFET
• Polarity: P-Channel

Description: IMPROVED LOW NOISE WIDEBAND - MONOLITHIC DUAL N-CHANNEL - JFET AMPLIFIER

• Transistor Type: JFET

Description: JFET P-Channel 30V Low Noise

• Transistor Type: JFET
• Features: Other

Description: DUAL, ULTRA-LOW NOISE, LOW GATE

• V_(BR)DSS: 40 volts
• V_GS(off): 1.5 volts
• T_J: -55 to 150 C
• Transistor Type: JFET

Description: DUAL, ULTRA-LOW NOISE, LOW-GATE-

• Polarity: N-Channel
• Features: Other

Description: Integrated Circuit Dual JFET-Input Operational Amplifier Low harmonic distortion: 0.01% typ. Low input bias and offset currents High input impedance High slew rate Wide gain bandwidth Low supply current The NTE858M is dual, low-noise JFET input

Description: Dissipation: 350 mW Height: 5.33 mm Weight: 200.998119 mg Noise Figure: 4 dB Number of Pins: 3 Width: 4.19 mm Categories: JFETs(Junction Field Effect) Case / Package: TO-92 Alternative Parts (Cross-Reference): 2N5950; BF256B; J175_D26Z; TIS742N5247.; Popularity: Low Fake Threat

• P_D: 350 milliwatts
• Features: Bulk Pack, Other
• Transistor Type: JFET
• Package Type: SOT3, TO-92

Description: Low-Noise JFET-Input Op Amp

• Features: Operational Amplifiers, Other
• Standards: RoHS Compliant
• Package Type: SOP

Description: Operational Amplifiers - Op Amps Low Noise JFET

• Features: Operational Amplifiers, Other

Description: Low Noise, Precision, Rail-to-Rail Output, JFET Op Amp

• Supply Voltage (V_S): 9 to 30 volts
• CMRR: 115 dB
• Gain-Bandwidth Product (GBW): 10.6 MHz
• Slew Rate (SR): 25 V/µs

Description: 30MHZ, LOW NOISE, HIGH PREC., JFET OPAMP. FREE 2 YEAR RADWELL WARRANTY

• Features: Operational Amplifiers

Description: DISCONTINUED BY MANUFACTURER, OPERATIONAL AMPLIFIER, LOW NOISE, JFET INPUT, DIP-8. FREE 2 YEAR RADWELL WARRANTY

Description: Single, 5.5 MHz, High Slew Rate, Low-Noise, Low-power, RRO Precision JFET Operational Amplifier 8-SOIC -40 to 125 Product overview: OPA145ID from Texas Instruments is an Operational Amplifier IC for signal conditioning, buffering, current sensing, analog measurement,

• Operating Temperature: -40 C
• Features: Operational Amplifiers

Description: Single, 5.5 MHz, High Slew Rate, Low-Noise, Low-power, RRO Precision JFET Operational Amplifier 5-SOT-23 -40 to 125 Product overview: OPA145IDBVT from Texas Instruments is an Operational Amplifier IC for signal conditioning, buffering, current sensing, analog measurement,

• Operating Temperature: -40 C
• Features: Operational Amplifiers

Description: 0.45-6.0 GHz Low Noise Transistor

• Features: Other
• Transistor Type: PHEMT

Description: The Dytran series 3214 is a cost effective single axis IEPE accelerometer available in TEDS variations. Units feature a wide bandwidth, 10-32 radial connector and 10-32 stud mounting capabilities. The series 3214 incorporates low noise JFET electronics and is hermetically sealed

• Acceleration: 500 g
• Frequency Range: 1 to 10,000 Hz
• Operating Temperature: -58 to 248 F
• Features: Other, Piezoelectric

Description: JFETs JFET N-Channel -40V Low Noise Product overview: PN4392 from InterFET is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing

• Transistor Type: Bipolar RF Transistors
• Features: Other

Description: JFETs JFET N-Channel -25V Low Noise Product overview: J108 from InterFET is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets,

• P_D: 360 milliwatts
• Transistor Type: Bipolar RF Transistors
• Polarity: N-Channel
• Features: Other

Description: The Dytran series 3333 is a miniature IEPE triaxial accelerometer with a low end frequency response, for excellent phase response at low frequencies. Units are light weight, compact and offer excellent signal-to-noise ratio. This series is offered in a case isolated version and

• Acceleration: 5,000 g
• Frequency Range: 0.54 to 10,000 Hz
• Operating Temperature: -58 to 248 F
• Sensor Mounting: Adhesive Base

Description: almost zero drift with time. This eliminates production line adjustments, as well as periodic calibration. Notable electrical characteristics are low supply current (650 µA,typical), single-supply operation (6.5V to 16V), low input offset voltage (15 µV,typical), low

Description: with reduced microphonic effect Beam splitter option Integrated beam splitter in the detector or micromechanical frame for compact design One common aperture opening for all channels Inside filter, common entry window Low channel crosstalk (< 0.1 %) Signal processing with JFET or

• Operating Temperature: -13 to 185 F
• Electrical Outputs: Analog Current
• Number of Gases Monitored: Single Gas