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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor Summary of Features Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage. Supports 2.9 V Vcc with enough external collector resistance. High gain and low noise at high frequencies due to
- Features: Other
- Packing Method: Tape Reel
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Supplier: Skyworks Solutions, Inc.
Description: The SKY65050-372LF is a high performance, n-channel lownoise transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and is provided in a 2.20 x 1.35 x 1.10 mm, 4-pin SC-70 package. The transistor’s low Noise Figure (NF), high gain, and
- Frequency Range: 450 to 6,000 MHz
- Minimum Gain: 15.5 dB
- Maximum Gain: 15.5 dB
- Noise Figure: 0.65 dB
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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor Summary of Features General purpose low noise amplifier for low voltage, low current applications High ESD robustness, typical 1500V (HBM) Low minimum noise figure 1.1 dB at 1.8 GHz High linearity: output compression point
- Features: Other
- Packing Method: Tape Reel
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Supplier: Infineon Technologies AG
Description: The BFP843F is a robust low noise broadband pre-matched hetero-junction bipolar transistor (HBT). Summary of Features Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5kV HBM ESD hardness High transition frequency fT = 60 GHz to
- Features: Other
- Packing Method: Tape Reel
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP Low Noise
- VCEO: 60 volts
- IC(max): 500 milliamps
- PD: 625 milliwatts
- Number of Transistors in the Chip: 1
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Supplier: Mini-Circuits
Description: TAV1-551+ is a low noise, high gain device manufactured using E-PHEMPT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise figure, particularly below 2.5 GHz, and when combining this noise figure with gain in a single device it
- Minimum Gain: 8.6 dB
- Maximum Gain: 21.6 dB
- Noise Figure: 0.5 to 1.4 dB
- Operating Temperature: -40 to 85 C
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Supplier: Microchip Technology, Inc.
Description: MMA085AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobility transistor (pHEMT) distributed amplifier in die form that operates between DC and 40 GHz. It is ideal for test instrumentation and communications infrastructure
- Features: Other
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Supplier: APITech
Description: MIL PRF 38534 screening is available. Ceramic and metal construction provides low junction temperatures. Use of bipolar transistors to achieve low phase noise and high output power. Integrate unique low pass filtering for superior harmonic performance.
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Supplier: Dexter Research Center, Inc.
Description: life of more than one year. 100% electrostatic shielded with a gain of 1,000 and includes a DC offset adjustment. To prevent accidental damage to the noise transistors, the input is diode-protected. Applications: Very low voltage noise and current noise in the
- Analog Input Channels: 1 #
- Gain Range: 1 to 1,000 #
- Maximum Output: 7 volts
- Output Impedance: 300 ohms
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Supplier: Accuris
Description: Detail specification for silicon n-p-n planar transistor intended for low level, low noise amplifier applications
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Supplier: Accuris
Description: Rules for the Preparation of Detail Specification for Semiconductor Devices of Assessed Quality: Low Noise, Low Power Microwave Transistors
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Supplier: Mini-Circuits
Description: SMT MMIC, Low Noise, Medium Power, Linear, pHEMT Transistor, 45 MHz to 6000 MHz, SOT-343 Style Package
- Minimum Gain: 8.3 dB
- Maximum Gain: 22.3 dB
- Noise Figure: 0.4 to 1.5 dB
- Operating Temperature: -40 to 85 C
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Supplier: Mini-Circuits
Description: TAV1-541+ is a low noise, high IP3 transistor device manufactured using E-PHEMPT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise figure, particularly below 2.5 GHz, and when combining this noise figure with IP3
- Minimum Gain: 9.3 dB
- Maximum Gain: 24.1 dB
- Noise Figure: 0.4 to 1.4 dB
- Operating Temperature: -40 to 85 C
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Supplier: Mini-Circuits
Description: SMT MMIC, Low Noise, Medium Power, pHEMT Transistor, 45 MHz to 6000 MHz, 3x3 mm QFN Style Package
- Minimum Gain: 8.4 dB
- Maximum Gain: 21.3 dB
- Noise Figure: 0.4 to 1.7 dB
- Operating Temperature: -40 to 85 C
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Supplier: Allied Electronics, Inc.
Description: Silicon PNP Transistors
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Supplier: Broadcom Inc.
Description: Enhanced-mode PHEMT technology requires only a single positive voltage source. This low noise, high gain, high linearity transistor is optimized for low current receiver designs in cellular/PCS and WCDMA handsets, mobile wireless devices and other low current RF
- Frequency Range: 450 to 6,000 MHz
- Minimum Gain: 15.5 dB
- Maximum Gain: 18.5 dB
- Output Power( P1dB): 14.400000000000006 dBm
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65081-70LF is being discontinued and is not recommended for new designs. Skyworks SKY65081-70LF is a high performance, ultra-wideband Power Amplifier (PA) driver with superior output power, low noise, linearity, and efficiency. The device provides a 2.0 dB Noise
- Frequency Range: 2,000 to 3,000 MHz
- Minimum Gain: 14.3 dB
- Maximum Gain: 14.3 dB
- Noise Figure: 2 dB
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65048-360LF is being discontinued and is not recommended for new designs. The SKY65048-360LF is a high performance, two-stage ultra-low noise amplifier. The device is fabricated from Skyworks advanced pHEMT process and is provided in a 2 x 2 mm, 8-pin Quad Flat No-Lead
- Frequency Range: 700 to 1,200 MHz
- Minimum Gain: 16.5 dB
- Maximum Gain: 16.5 dB
- Noise Figure: 0.65 dB
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65045-70LF is being discontinued and is not recommended for new designs. The suggested replacement are SKY65162-70LF, SKY65173-70LF Skyworks SKY65045-70LF is a high-performance, ultrawideband Power Amplifier (PA) driver with superior output power, low noise, linearity,
- Frequency Range: 390 to 1,500 MHz
- Minimum Gain: 14 dB
- Maximum Gain: 14 dB
- Noise Figure: 1.8 dB
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Supplier: Broadcom Inc.
Description: ATF-35143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 surface mount plastic package.
- Features: Other
- Transistor Type: PHEMT
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Supplier: Allied Electronics, Inc.
Description: Silicon NPN Transistor Low Noises
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Supplier: Allied Electronics, Inc.
Description: Silicon PNP Transistors
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Supplier: Broadcom Inc.
Description: Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical cellular/PCS handset and other wireless RF applications, high part-to-part consistency, and excellent reliability. The ATF-38143 is packaged in the miniature SOT-343 package.
- Features: Other
- Transistor Type: PHEMT
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Low-Power. Search-friendly keywords include transistor, BJT, switching, amplification, Low-Power, Bipolar Transistor, Bipolar RF Transistors. This
- TJ: 150 C
- Features: Bipolar RF Transistors, Other
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Supplier: Accuris
Description: Semiconductor Device, Transistor, Plastic, NPN, Silicon, Switching, Low Noise Type 2N2484UE1 JAN, JANTX, JANJ
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Supplier: ROHM Semiconductor GmbH
Description: The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
- V(BR)DSS: 650 volts
- IDSS: 47,000 milliamps
- QG: 149.99999999999997 nC
- PD: 480,000 milliwatts
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Supplier: ROHM Semiconductor GmbH
Description: The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
- V(BR)DSS: 650 volts
- IDSS: 11,000 milliamps
- QG: 32 nC
- PD: 124,000 milliwatts
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Supplier: ROHM Semiconductor GmbH
Description: The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
- V(BR)DSS: 650 volts
- IDSS: 35,000 milliamps
- QG: 110 nC
- PD: 379,000 milliwatts
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Supplier: ROHM Semiconductor GmbH
Description: The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
- V(BR)DSS: 650 volts
- IDSS: 7,000 milliamps
- QG: 20 nC
- PD: 78,000 milliwatts
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Supplier: Broadcom Inc.
Description: Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical cellular/PCS base station and other wireless RF applications, high part-to-part consistency, and excellent reliability. The ATF-34143 is packaged in the miniature SOT-343 package.
- Features: Other
- Transistor Type: PHEMT
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Supplier: Newark, An Avnet Company
Description: Analog high linearity low noise variable gain amplifier / REEL RoHS Compliant: Yes
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Supplier: BAE Systems - Fairchild Imaging
Description: The Fairchild Imaging CIS2521F is a large format, ultra low-noise CMOS image sensor intended for scientific and industrial applications requiring high quality imaging under extremely low light conditions. The device features an array of 5 transistor (5T) pixels on a 6.5µm
- Horizontal Pixels: 2,560
- Vertical Pixels: 2,160
- Pixel Size: 6.5 µm
- Maximum Frame Rate: 100 fps
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Supplier: Nexperia B.V.
Description: RS-232, SPI, I²C, low-power LAN Low-noise isolated USB supplies Process control Telecom supplies Radio supplies Distributed supplies Medical instruments Precision instruments Low-noise filament supplies Motor control Isolated power supplies for automotive
- Transistor Grade / Operating Range: Automotive, Industrial
- Features: Other
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Supplier: ODG (Origin Data Global)
Description: LOW-NOISE SI TRANSISTOR
- Features: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT Low-Noise Matched Transistor Array
- Features: Bipolar RF Transistors
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Featured Products Top
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Quality and Reliability The MMBT3904LT3G is designed to meet the stringent quality standards of ON Semiconductor, ensuring reliable performance across a wide range of environmental conditions. It offers excellent amplification properties and low noise, making it suitable for (read more)
Browse Transistors Datasheets for Win Source Electronics -
dissipation effect is better than that of the super copper and aluminum. Ceramics are insulated, resistant to high temperatures, oxidation, acid and alkali, cold and thermal shock, and low coefficient of thermal expansion, ensuring stability in high and low temperatures or other harsh environments (read more)
Browse Aluminum Oxide and Alumina Ceramics Datasheets for Xiamen Innovacera Advanced Materials Co., Ltd. -
-frequency components and smaller transformers, making them more compact. Noise and Ripple Linear Power Supplies: Produce very low noise and ripple, providing clean and stable output. Ideal for sensitive analog (read more)
Browse Power Supplies Datasheets for Uni-Trend US
Conduct Research Top
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Solving the Noise Puzzle with Low-Noise Matched Bipolar Transistor Pairs
Noise is one of the more important aspects of circuit design. Lower noise in audio amplifier design means better quality audio. Low-noise in instrument design means more reliable and accurate measurements at lower voltage and current levels. And low-noise in current source designs means less noise
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A Guide to Using FETS (Field Effect Transistors) for Sensor Applications
FETs (Field Effect Transistors). suitable for use in low noise amplifier applications for. photo diodes, accelerometers, transducers, and other types of sensors. Read the White Paper
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A Guide to Using FETS for Sensor Applications
In particular, low noise JFETs exhibit low input gate currents that are desirable when working with high impedance devices at the input or with high value feedback resistors (e.g., >=1M ). Operational amplifiers (op amps) with bipolar transistor input stages have much higher input noise currents
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Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
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AN3010: An Examination of Recovery Time of an Integrated Limiter/LNA
or nuclear electromagnetic pulse. Especially, low noise amplifiers (LNAs) in the front-end of microwave systems need high power protection because these amplifiers can sustain only low input power levels in the range of 10-20 dBm continuous wave (CW). To protect these circuits and maintain low
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Linear Voltage Fan Speed Control Using Microchip's TC64X Family
Pulse Width Modulation (PWM) fan speed control methodology pulse-width modulates a fan's full-rated power supply voltage at a low frequency, typically 30 Hz. A typical PWM circuit, consisting of a transistor in series with a fan, can be small and inexpensive because it is either fully
More Information Top
Indicates content that may require registration and/or purchase.
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Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices
Voltage stabilizers consist of low noise transistors are, in some cases, inserted between the batteries and the circuit.
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Comments on “low‐noise one‐port microwave transistor amplifier”
Venguer et al. [1] reported a low noise transistor based reflection amplifier, and described it as “a new type of a microwave reflec- tion amplifier with very low noise properties . . . ” .
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RF/Microwave Circuit Design for Wireless Applications Complete Document
This patented technique (U.S. Patent Nos. 3,624,536 and 3,891,934, since expired), known as lossless feedback, provides lower noise transistor .
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Small Signal Microwave Amplifier Design
Equations 8.29 through 8.31 are the well-known minimum noise figure and optimum noise source match given in one form or another in most data sheets for low noise transistors .
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Physics and Technology of Heterojunction Devices
Fig. 5.28 Typical layer structure of a modulation doped heteroj unction requiredfor millimetre wave low noise transistor applications All the necessary components are indicated .
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Page 2. Semiconductor parts with 947 in root number
LOW NOISE TRANSISTORS .
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Enhancing the noise performance of monolithic microwave integrated circuit-based low noise amplifiers through the use of a discrete preamplifying transistor
Imperfections in their manufactur- ing may, for example, result in the lowest noise transistor not being found in the first stage, while the GaAs and InP substrates that are typically used for MMICs are also quite lossy.
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BC559 datasheet : Datasheets for Electronic Components and Semiconductors
PNP silicon low noise transistor .
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The principles of impedance optimization and noise matching
An actual low noise transistor has a base resistance of 50 L2 upwards, and also shows a disproportionate increase in flicker noise as the operating current is increased.
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Low phase noise operation of microwave oscillator circuits
The efficiency of this design method and its ease of use represent a real breakthrough in the field of low noise transistor oscillator circuit design.