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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP Low Noise
- Polarity: PNP, Other
- Transistor Type: General Purpose BJT, Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor Summary of Features Low noise amplifier for low current applications Collector design supports 5V supply voltage For oscillators up to 3.5 GHz Low noise figure 1.0 dB at 1.8 GHz Pb-free (RoHS compliant
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor Summary of Features General purpose Low Noise Amplifier Ideal for low current operation High breakdown voltage enables operation in automotive applications Minimum noise figure 1.0 dB @ 1mA,1.5V,1.9GHz Small
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: High Performance NPN Bipolar RF Transistor Summary of Features High performance low noise amplifier Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz For a wide range of non automotive applications such as WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB, UMTS/LTE
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA Summary of Features For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz, F = 0.9 dB at 900 MHz
- Package Type: Other
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Supplier: Microchip Technology, Inc.
Description: MMA085AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobili ty transistor (pHEMT) distributed amplifier in die form that operates between DC and 40 GHz. It is ideal for test instrumentation and communications infrastructure
- Package Type: Other
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Supplier: APITech
Description: phase noise performance. MIL PRF 38534 screening is available. Ceramic and metal construction provides low junction temperatures. Use of bipolar transistors to achieve low phase noise and high output power. Integrate unique low pass filtering for superior
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Supplier: Dexter Research Center, Inc.
Description: operational life of more than one year. 100% electrostatic shielded with a gain of 1,000 and includes a DC offset adjustment. To prevent accidental damage to the noise transistors, the input is diode-protected. Applications: Very low voltage noise and current noise
- Analog Input Channels: 1 #
- Form Factor: Stand Alone
- Gain Range: 1 to 1000 #
- Maximum Output: 7 +/-volts
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Supplier: Skyworks Solutions, Inc.
Description: The SKY65050-372LF is a high performance, n-channel lownoise transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and is provided in a 2.20 x 1.35 x 1.10 mm, 4-pin SC-70 package. The transistor’s low Noise Figure (NF), high gain, and
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 450 to 6000 MHz
- Maximum Gain: 15.5 dB
- Maximum Operating Voltage: 3 volts
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Supplier: Microchip Technology, Inc.
Description: The MMA043PP4 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobili ty transistor (pHEMT) low-noise wideband amplifier in a leadless 4 mm × 4 mm surface-mount package that operates between 0.5 GHz and 12 GHz. The MMA043PP4 amplifier provides 16 dB of gain, 2.0 dB noise
- Package Type: Other
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Supplier: ODG (Origin Data Global)
Description: LOW-NOISE SI TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: LOW-NOISE TRANSISTOR
- Package Type: Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: LOW-NOISE SIGE:C TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: RF LOW-NOISE SI TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: Broadcom Inc.
Description: Enhanced-mode PHEMT technology requires only a single positive voltage source. This low noise, high gain, high linearity transistor is optimized for low current receiver designs in cellular/PCS and WCDMA handsets, mobile wireless devices and other low current RF
- Amplifier Type: Low Noise Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 450 to 6000 MHz
- Maximum Gain: 18.5 dB
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Supplier: Skyworks Solutions, Inc.
Description: Skyworks SKY65173-70LF is a high performance, wideband, low-noise, highly linear Power Amplifier (PA) driver. The device provides a 2.6 dB Noise Figure (NF) and an output power at 1 dB compression of +26.5 dBm, making the SKY65173-70LF ideal for use in the driver stage of
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 869 to 960 MHz
- Maximum Gain: 16.5 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65080-70LF is being discontinued and is not recommended for new designs. Skyworks SKY65080-70LF is a high performance, ultra-wideband Power Amplifier (PA) driver with superior output power, low noise, linearity, and efficiency. The device provides a 2.3 dB Noise
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 1500 to 2500 MHz
- Maximum Gain: 15 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65045-70LF is being discontinued and is not recommended for new designs. The suggested replacement are SKY65162-70LF, SKY65173-70LF Skyworks SKY65045-70LF is a high-performance, ultrawideband Power Amplifier (PA) driver with superior output power, low noise, linearity,
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 390 to 1500 MHz
- Maximum Gain: 14 dB
- Maximum Operating Voltage: 5 volts
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Supplier: ROHM Semiconductor GmbH
Description: The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
- Package Type: TO-247, Other
- Polarity: N-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: ROHM Semiconductor GmbH
Description: The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
- Package Type: TO-247, Other
- Polarity: N-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: ROHM Semiconductor GmbH
Description: The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
- Package Type: Other
- Polarity: N-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: ROHM Semiconductor GmbH
Description: The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
- Package Type: TO-251 / TO-252, Other
- Polarity: N-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: Broadcom Inc.
Description: Enhanced-mode PHEMT technology requires only a single positive voltage source. This low noise, high gain, high linearity transistor is optimized for low current receiver designs in cellular/PCS and WCDMA handsets, mobile wireless devices and other low current RF
- Package Type: Other
- Polarity: Other
- Transistor Grade / Operating Range: Commercial
- Transistor Type: PHEMT
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Supplier: Broadcom Inc.
Description: ATF-35143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 surface mount plastic package.
- Package Type: Other
- Transistor Grade / Operating Range: Other
- Transistor Type: PHEMT
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT Quad NPN Low Noise
- Transistor Type: Bipolar RF Transistors
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Supplier: Broadcom Inc.
Description: Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical cellular/PCS handset and other wireless RF applications, high part-to-part consistency, and excellent reliability. The ATF-38143 is packaged in the miniature SOT-343 package.
- Package Type: Other
- Transistor Grade / Operating Range: Other
- Transistor Type: PHEMT
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN LOW NOISE 20V
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Low Noise
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PNP Low Noise
- Transistor Type: Bipolar RF Transistors
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Description: LOW-NOISE SI TRANSISTOR
- Transistor Type: General Purpose BJT
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Featured Products Top
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Quality and Reliability The MMBT3904LT3G is designed to meet the stringent quality standards of ON Semiconductor, ensuring reliable performance across a wide range of environmental conditions. It offers excellent amplification properties and low noise, making it suitable for (read more)
Browse Transistors Datasheets for Win Source Electronics -
In this article, we discuss some important factors that are hard to find when choosing LDO regulators. We also compare actual switching regulators and LDO regulators when we require low noise. We discuss trends in the industry. We end with how high-performance LDO regulators (read more)
Browse General Purpose Diodes Datasheets for ODG (Origin Data Global) -
dissipation effect is better than that of the super copper and aluminum. Ceramics are insulated, resistant to high temperatures, oxidation, acid and alkali, cold and thermal shock, and low coefficient of thermal expansion, ensuring stability in high and low temperatures or other harsh environments (read more)
Browse Aluminum Oxide and Alumina Ceramics Datasheets for Xiamen Innovacera Advanced Materials Co., Ltd. -
-frequency components and smaller transformers, making them more compact. Noise and Ripple Linear Power Supplies: Produce very low noise and ripple, providing clean and stable output. Ideal for sensitive analog (read more)
Browse Power Supplies Datasheets for Uni-Trend US
Conduct Research Top
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Solving the Noise Puzzle with Low-Noise Matched Bipolar Transistor Pairs
Noise is one of the more important aspects of circuit design. Lower noise in audio amplifier design means better quality audio. Low-noise in instrument design means more reliable and accurate measurements at lower voltage and current levels. And low-noise in current source designs means less noise
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A Guide to Using FETS (Field Effect Transistors) for Sensor Applications
FETs (Field Effect Transistors). suitable for use in low noise amplifier applications for. photo diodes, accelerometers, transducers, and other types of sensors. Read the White Paper
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A Guide to Using FETS for Sensor Applications
In particular, low noise JFETs exhibit low input gate currents that are desirable when working with high impedance devices at the input or with high value feedback resistors (e.g., >=1M ). Operational amplifiers (op amps) with bipolar transistor input stages have much higher input noise currents
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Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
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AN3010: An Examination of Recovery Time of an Integrated Limiter/LNA
or nuclear electromagnetic pulse. Especially, low noise amplifiers (LNAs) in the front-end of microwave systems need high power protection because these amplifiers can sustain only low input power levels in the range of 10-20 dBm continuous wave (CW). To protect these circuits and maintain low
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Linear Voltage Fan Speed Control Using Microchip's TC64X Family
Pulse Width Modulation (PWM) fan speed control methodology pulse-width modulates a fan's full-rated power supply voltage at a low frequency, typically 30 Hz. A typical PWM circuit, consisting of a transistor in series with a fan, can be small and inexpensive because it is either fully
More Information Top
Indicates content that may require registration and/or purchase.
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Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices
Voltage stabilizers consist of low noise transistors are, in some cases, inserted between the batteries and the circuit.
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Comments on “low‐noise one‐port microwave transistor amplifier”
Venguer et al. [1] reported a low noise transistor based reflection amplifier, and described it as “a new type of a microwave reflec- tion amplifier with very low noise properties . . . ” .
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RF/Microwave Circuit Design for Wireless Applications Complete Document
This patented technique (U.S. Patent Nos. 3,624,536 and 3,891,934, since expired), known as lossless feedback, provides lower noise transistor .
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Small Signal Microwave Amplifier Design
Equations 8.29 through 8.31 are the well-known minimum noise figure and optimum noise source match given in one form or another in most data sheets for low noise transistors .
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Physics and Technology of Heterojunction Devices
Fig. 5.28 Typical layer structure of a modulation doped heteroj unction requiredfor millimetre wave low noise transistor applications All the necessary components are indicated .
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Page 2. Semiconductor parts with 947 in root number
LOW NOISE TRANSISTORS .
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Enhancing the noise performance of monolithic microwave integrated circuit-based low noise amplifiers through the use of a discrete preamplifying transistor
Imperfections in their manufactur- ing may, for example, result in the lowest noise transistor not being found in the first stage, while the GaAs and InP substrates that are typically used for MMICs are also quite lossy.
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BC559 datasheet : Datasheets for Electronic Components and Semiconductors
PNP silicon low noise transistor .
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The principles of impedance optimization and noise matching
An actual low noise transistor has a base resistance of 50 L2 upwards, and also shows a disproportionate increase in flicker noise as the operating current is increased.
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Low phase noise operation of microwave oscillator circuits
The efficiency of this design method and its ease of use represent a real breakthrough in the field of low noise transistor oscillator circuit design.