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Supplier: Infineon Technologies AG
Description: Home // Products // RF // RF Transistor // Low Noise RF Transistors // BFP183
- Package Type: Other
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP Low Noise
- Polarity: PNP, Other
- Transistor Type: General Purpose BJT, Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor Summary of Features Low noise amplifier for low current applications Collector design supports 5V supply voltage For oscillators up to 3.5 GHz Low noise figure 1.0 dB at 1.8 GHz Pb-free (RoHS compliant
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor for ESD protected high gain low noise amplifier Summary of Features Excellent ESD performance typical value 1000 V (HBM) Outstanding Gms = 20 dB Noise Figure F = 0.9 dB SIEGET® 45 - Line Pb-free (ROHS compliant) package Potential Applications
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA Summary of Features For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz, F = 0.9 dB at 900 MHz
- Package Type: SOT23, Other
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Supplier: Microchip Technology, Inc.
Description: MMA085AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobili ty transistor (pHEMT) distributed amplifier in die form that operates between DC and 40 GHz. It is ideal for test instrumentation and communications infrastructure
- Package Type: Other
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Supplier: APITech
Description: phase noise performance. MIL PRF 38534 screening is available. Ceramic and metal construction provides low junction temperatures. Use of bipolar transistors to achieve low phase noise and high output power. Integrate unique low pass filtering for superior
- Harmonic Suppression: -15 dBc
- Oscillation Frequency: 350 to 400 MHz
- Oscillator Type: VCO
- Phase Noise (@ 10kHz): 120 dBc/Hz
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Supplier: Dexter Research Center, Inc.
Description: operational life of more than one year. 100% electrostatic shielded with a gain of 1,000 and includes a DC offset adjustment. To prevent accidental damage to the noise transistors, the input is diode-protected. Applications: Very low voltage noise and current noise
- Analog Input Channels: 1 #
- Application: General Lab and Industrial
- Form Factor: Stand Alone
- Gain Range: 1 to 1000 #
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Supplier: Skyworks Solutions, Inc.
Description: The SKY65050-372LF is a high performance, n-channel low noise transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and is provided in a 2.20 x 1.35 x 1.10 mm, 4-pin SC-70 package. The transistor’s low Noise Figure (NF),
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 450 to 6000 MHz
- Maximum Gain: Over 15.5 dB
- Maximum Operating Voltage: 3 volts
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Supplier: Allied Electronics, Inc.
Description: Silicon NPN Transistor Low Noises
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Supplier: Analog Devices, Inc.
Description: Product Details The HMC8401 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). The HMC8401 is a wideband low noise amplifier which operates between dc and 28 GHz. The amplifier provides 14.5 dB
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 10 to 28000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 14.5 dB
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Supplier: Analog Devices, Inc.
Description: Product Details The HMC8402 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier which operates between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of gain, 2 dB
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 2000 to 30000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 13.5 dB
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Supplier: Analog Devices, Inc.
Description: Product Details The HMC1040CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise wideband amplifier that operates from 20 GHz to 44 GHz. The HMC1040CHIPS is self biased and provides
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 20000 to 44000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 21 dB
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Supplier: Analog Devices, Inc.
Description: Product Details The HMC903 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier (LNA), which is self biased with the optional bias control for IDQ reduction. It operates
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 6000 to 18000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 19 dB
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Supplier: Microchip Technology, Inc.
Description: The MMA043PP4 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobili ty transistor (pHEMT) low-noise wideband amplifier in a leadless 4 mm × 4 mm surface-mount package that operates between 0.5 GHz and 12 GHz. The MMA043PP4 amplifier provides 16 dB of gain, 2.0 dB noise
- Package Type: Other
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Supplier: Allied Electronics, Inc.
Description: Silicon PNP Transistors
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Supplier: Skyworks Solutions, Inc.
Description: chains. The SKY65173-70LF uses low-cost Surface-Mount Technology (SMT) in the form of a 4-pin, 2.4 x 4.5 mm Small Outline Transistor (SOT-89) package. Features Wideband frequency range: 869 to 960 MHz Low Noise Figure: < 2.6 dB typical High IIP3
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 869 to 960 MHz
- Maximum Gain: Over 16.5 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Skyworks Solutions, Inc.
Description: Skyworks SKY65045-70LF is a high-performance, ultrawideband Power Amplifier (PA) driver with superior output power, low noise, linearity, and efficiency. The device provides a 1.6 dB Noise Figure (NF) and an output power at 1 dB compression of 25 dBm, making the SKY65045-70LF
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 390 to 1500 MHz
- Maximum Gain: Over 14 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Maxim Integrated
Description: The MAX2181 is a highly integrated FM variable-gain low-noise amplifier ideal for use in automotive FM and FM-diversity active antenna applications. The device features an FM signal path, providing 30dB of gain range, controlled by an on-chip power detector. The FM signal path covers 76MHz to
- Device Type: Other
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Broadcom Inc.
Description: Enhanced-mode PHEMT technology requires only a single positive voltage source. This low noise, high gain, high linearity transistor is optimized for low current receiver designs in cellular/PCS and WCDMA handsets, mobile wireless devices and other low current RF
- Amplifier Type: Low Noise Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 450 to 6000 MHz
- Maximum Gain: 18.5 dB
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Supplier: ROHM Semiconductor GmbH
Description: The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
- Package Type: TO-251 / TO-252, Other
- Polarity: N-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: ROHM Semiconductor GmbH
Description: The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
- Package Type: TO-247, Other
- Polarity: N-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: ROHM Semiconductor GmbH
Description: The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
- Package Type: TO-247, Other
- Polarity: N-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: ROHM Semiconductor GmbH
Description: The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
- Package Type: TO-247, Other
- Polarity: N-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: Allied Electronics, Inc.
Description: Silicon PNP Transistors
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Supplier: Broadcom Inc.
Description: Enhanced-mode PHEMT technology requires only a single positive voltage source. This low noise, high gain, high linearity transistor is optimized for low current receiver designs in cellular/PCS and WCDMA handsets, mobile wireless devices and other low current RF
- Package Type: Other
- Polarity: Other
- Transistor Grade / Operating Range: Commercial
- Transistor Type: PHEMT
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT Quad NPN Low Noise
- Transistor Type: Bipolar RF Transistors
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Description: LOW-NOISE TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: Maxim Integrated
Description: The MAX8882/MAX8883 dual, low-noise, low-dropout linear regulators operate from a +2.5V to +6.5V input and deliver up to 160mA each of continuous current. Both versions offer low output noise and low dropout of only 72mV at 80mA. Designed with an internal P-channel
- IC Package Type: Other
- Input Voltage (VIN): 2.5 to 6.5 volts
- Operating Temperature: -40 to 85 C
- Output Level / Polarity: Positive
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Supplier: Spectral Dynamics, Inc.
Description: P.I.N.D. - Particle Impact Noise Detection Vibration Shock and Acoustics to insure the highest of reliability For over thirty years the PIND Products Group of SPECTRAL DYNAMICS, INC. has given users a simple, reliable, and inexpensive method of Particle Impact Noise
- Form Factor: Bench / Rack / Cabinet
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Supplier: RFMW
Description: Transistor, Low Noise, GaAs HEMT
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Supplier: Accuris
Description: Rules for the Preparation of Detail Specification for Semiconductor Devices of Assessed Quality: Low Noise, Low Power Microwave Transistors
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Supplier: Nexperia B.V.
Description: The NXF6505A/B-Q100 is a specialized push-pull transformer driver that is designed to deliver low noise and low EMI for isolated power supplies in small form factors. This driver is capable of driving low-profile, center-tapped transformers from a 2.25 V to 5 V DC power
- Package Type: Other
- Transistor Grade / Operating Range: Automotive
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Description: LOW-NOISE SI TRANSISTOR
- Output Power: 0.1200 watts
- Packing Method: Bulk Pack, Other
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Supplier: PUI - Projections Unlimited, Inc.
Description: NPN Transistors, Best Suited For Low Noise VHF And VHF Amplifier Mixer and Oscillator Applications.
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Quality and Reliability The MMBT3904LT3G is designed to meet the stringent quality standards of ON Semiconductor, ensuring reliable performance across a wide range of environmental conditions. It offers excellent amplification properties and low noise, making it suitable for (read more)
Browse Transistors Datasheets for Win Source Electronics
Conduct Research Top
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Solving the Noise Puzzle with Low-Noise Matched Bipolar Transistor Pairs
Noise is one of the more important aspects of circuit design. Lower noise in audio amplifier design means better quality audio. Low-noise in instrument design means more reliable and accurate measurements at lower voltage and current levels. And low-noise in current source designs means less noise
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A Guide to Using FETS (Field Effect Transistors) for Sensor Applications
FETs (Field Effect Transistors). suitable for use in low noise amplifier applications for. photo diodes, accelerometers, transducers, and other types of sensors. Read the White Paper
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A Guide to Using FETS for Sensor Applications
In particular, low noise JFETs exhibit low input gate currents that are desirable when working with high impedance devices at the input or with high value feedback resistors (e.g., >=1M ). Operational amplifiers (op amps) with bipolar transistor input stages have much higher input noise currents
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Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
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AN3010: An Examination of Recovery Time of an Integrated Limiter/LNA
or nuclear electromagnetic pulse. Especially, low noise amplifiers (LNAs) in the front-end of microwave systems need high power protection because these amplifiers can sustain only low input power levels in the range of 10-20 dBm continuous wave (CW). To protect these circuits and maintain low
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Linear Voltage Fan Speed Control Using Microchip's TC64X Family
Pulse Width Modulation (PWM) fan speed control methodology pulse-width modulates a fan's full-rated power supply voltage at a low frequency, typically 30 Hz. A typical PWM circuit, consisting of a transistor in series with a fan, can be small and inexpensive because it is either fully
More Information Top
Indicates content that may require registration and/or purchase.
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Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices
Voltage stabilizers consist of low noise transistors are, in some cases, inserted between the batteries and the circuit.
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Comments on “low‐noise one‐port microwave transistor amplifier”
Venguer et al. [1] reported a low noise transistor based reflection amplifier, and described it as “a new type of a microwave reflec- tion amplifier with very low noise properties . . . ” .
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RF/Microwave Circuit Design for Wireless Applications Complete Document
This patented technique (U.S. Patent Nos. 3,624,536 and 3,891,934, since expired), known as lossless feedback, provides lower noise transistor .
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Small Signal Microwave Amplifier Design
Equations 8.29 through 8.31 are the well-known minimum noise figure and optimum noise source match given in one form or another in most data sheets for low noise transistors .
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Physics and Technology of Heterojunction Devices
Fig. 5.28 Typical layer structure of a modulation doped heteroj unction requiredfor millimetre wave low noise transistor applications All the necessary components are indicated .
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Page 2. Semiconductor parts with 947 in root number
LOW NOISE TRANSISTORS .
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Enhancing the noise performance of monolithic microwave integrated circuit-based low noise amplifiers through the use of a discrete preamplifying transistor
Imperfections in their manufactur- ing may, for example, result in the lowest noise transistor not being found in the first stage, while the GaAs and InP substrates that are typically used for MMICs are also quite lossy.
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BC559 datasheet : Datasheets for Electronic Components and Semiconductors
PNP silicon low noise transistor .
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The principles of impedance optimization and noise matching
An actual low noise transistor has a base resistance of 50 L2 upwards, and also shows a disproportionate increase in flicker noise as the operating current is increased.
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Low phase noise operation of microwave oscillator circuits
The efficiency of this design method and its ease of use represent a real breakthrough in the field of low noise transistor oscillator circuit design.