-
Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 884911-MJE371 Operating Temperature Range: -65°C ~ 150°C (TJ) Features: Bipolar (BJT) Transistor PNP 40 V 4 A - 40 W Through Hole TO-126 Package: Bulk Package: TO-225AA, TO-126-3 Mounting: Through Hole Part Status: Obsolete Family
- Features: Other
- Polarity: PNP
- Package Type: SOT3
-
Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 809446-MJE210 Packaging: Tube Mounting Style: Through Hole Power - Max: 1.5W Transistor Type: PNP Frequency - Transition: 65MHz Part Status: Obsolete (End Of Life) Supplier Device Package: SOT-32-3 Temperature Range -
- TJ: 150 C
- Power Gain: 45 dB
- Output Power: 1.5 watts
- Operating Frequency: 65 MHz
-
Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 058935-MJE350G Packaging: Bulk Mounting: Through Hole Transistor Polarity: PNP Family Name: MJE350 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package:
- Features: Other
- Polarity: PNP
- Package Type: SOT3
-
-
Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 884917-MJE703G Operating Temperature Range: -55°C ~ 150°C (TJ) Features: Bipolar (BJT) Transistor PNP - Darlington 80 V 4 A - 40 W Through Hole TO-126 Package: TO-225AA, TO-126-3 Package: Bulk Mounting: Through Hole Family Name:
- Features: Other
- Polarity: PNP
- Package Type: SOT3
-
Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PNP Medium Power
- Transistor Type: Bipolar RF Transistors
-
Supplier: VAST STOCK CO., LIMITED
Description: Darlington Transistors 4A 80V Bipolar Power PNP
- Transistor Type: Darlington
-
Supplier: ODG (Origin Data Global)
Description: TRANS PNP DARL 80V 4A TO126
- IC(max): 4,000 milliamps
- VCEO: 80 volts
- Output Power: 40 watts
- TJ: -55 to 150 C
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: 2A, 100V, PNP, Si, POWER TRANSISTOR, TO-225, CASE 77-09, 3 PIN Product overview: MJE271 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers
- IC(max): 2,000 milliamps
- VCEO: 100 volts
- VCBO: 100 volts
- fT: 6 MHz
-
Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP 40V 4A 40W Through Hole TO-126
- Features: Other
- Polarity: PNP
-
Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, -40V, SOT-223, FULL REEL; Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:3A; Power Dissipation:2W; Transistor Mounting:Surface Mount; No. of Pins:4Pins RoHS Compliant: Yes
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: 750@3V,2A 80V PNP 4A 40W TO-225-3 Darlington Transistors ROHS
- hfe: 750
- VCEO: 80 volts
- IC(max): 4,000 milliamps
- PD: 40,000 milliwatts
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: PNP Darlington Power Transistor, 80V, 4A, TO-225 Product overview: MJE703G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers
- IC(max): 4,000 milliamps
- VCEO: 80 volts
- VCBO: 80 volts
- PD: 40,000 milliwatts
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: 4.0 A, 40 V PNP Bipolar Power Transistor, TO-225, 500-BLKBX Product overview: MJE371 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers
- IC(max): 4,000 milliamps
- VCEO: 40 volts
- VCBO: 40 volts
- PD: 40,000 milliwatts
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: PNP Darlington Power Transistor, 60V, 4A, TO-225 Product overview: MJE700G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers
- IC(max): 4,000 milliamps
- VCEO: 60 volts
- VCBO: 60 volts
- PD: 40,000 milliwatts
-
Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, DUAL, -30V SOT563, FULL REEL; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; DC Collector Current:100mA; Power Dissipation Pd:500mW; DC Current Gain hFE:520hFE; No. of Pins:6Pins RoHS Compliant: Yes
-
Supplier: Rochester Electronics
Description: Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
- Transistor Type: Bipolar RF Transistors, Power BJT Transistors, Power MOSFET
- Features: Bulk Pack, Other
- Polarity: PNP
-
Supplier: Newark, An Avnet Company
Description: TRANS PNP 100V 3.7A SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:100MHz; Power Dissipation Pd:600mW; DC Collector Current:-3.7A; DC Current Gain hFE:300hFE; Transistor Case RoHS Compliant: Yes
-
Description: TRANS PNP 40V 4A TO126
- VCEO: 40 volts
- IC(max): 4,000 milliamps
- Features: Bulk Pack, Other
- Transistor Type: General Purpose BJT
-
Supplier: RS Components, Ltd.
Description: PNP power transistor,MJE15029 8A
- Number of Transistors in the Chip: 1
- Transistor Type: General Purpose BJT
- Features: Other
- Polarity: PNP
-
Supplier: Nexperia B.V.
Description: PNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and soldarable side pads. Features and benefits General-purpose transistors Three current gain selections Low package height of 0.37 mm
- hfe: 420 to 800
- VCEO: -45 volts
- IC(max): -100 milliamps
- PD: 280 milliwatts
-
Supplier: New Yorker Electronics Co., Inc.
Description: Transistor, PNP, -140V, -20.00A, TO-3
- VCEO: -140 volts
- IC(max): -20,000 milliamps
- Transistor Type: General Purpose BJT
- Features: Other, Tray
-
Supplier: ODG (Origin Data Global)
Description: RF TRANS PNP 20V 600MHZ SOT23
- IC(max): 50 milliamps
- VCEO: 20 volts
- Operating Frequency: 600 MHz
- Output Power: 0.225 watts
-
Supplier: Nexperia B.V.
Description: PNP general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 30 V) Matched pair. AEC-Q101 qualified Small SMD plastic package Applications Applications with working point
- hfe: 420 to 800
- VCEO: -30 volts
- IC(max): -100 milliamps
- Transistor Type: General Purpose BJT
-
Supplier: Nexperia B.V.
Description: PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX19 Features and benefits High current (max. 500 mA) Low voltage (max. 45 V) AEC-Q101 qualified Applications Saturated switching and driver applications e.g. for industrial
- hfe: 100 to 600
- VCEO: -45 volts
- IC(max): -500 milliamps
- PD: 250 milliwatts
-
Supplier: Nexperia B.V.
Description: NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits High current High voltage Two current gain selections AEC-Q101 qualified Applications General-purpose switching and amplification 48 V automotive board net
- Transistor Grade / Operating Range: Automotive
- Transistor Type: General Purpose BJT
- Features: Other
- Polarity: PNP
-
Supplier: DigiKey
Description: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 100mA 250MHz 200mW Surface Mount UMT3F
- Transistor Grade / Operating Range: Automotive
- Features: Other
- Polarity: PNP
-
Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX53
- IC(max): 1,000 milliamps
- VCEO: 80 volts
- VCBO: 100 volts
- Transistor Type: Bipolar RF Transistors
-
Supplier: Infineon Technologies AG
Description: PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 2.2 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101
- VCEO: 50 volts
- VCBO: 50 volts
- fT: 150 MHz
- hfe: 70
-
Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) Potential Applications For AF input stages
- IC(max): 100 milliamps
- VCEO: 30 volts
- VCBO: 30 volts
- fT: 250 MHz
-
Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Fast Switching Transistor // SMBT3906S
- IC(max): 200 milliamps
- VCEO: 40 volts
- VCBO: 40 volts
- Transistor Type: Bipolar RF Transistors
-
Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans GP BJT PNP 25V 12A
- IC(max): 12,000 milliamps
- PD: 36,000 milliwatts
- TJ: 150 C
- Transistor Type: Darlington
-
Supplier: Newark, An Avnet Company
Description: Bipolar (BJT) Single Transistor, BRT, PNP, 50 V, 180 MHz, 250 mW, 100 mA, 100 RoHS Compliant: Yes
-
Supplier: Semicoa
Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also
- hfe: 175
- VCEO: 40 volts
- VCBO: 60 volts
- IC(max): 600 milliamps
-
Supplier: Utmel Electronic Limited
Description: Trans GP BJT PNP 100V 5A 3-Pin TO-39
- IC(max): 5,000 milliamps
- PD: 1,000 milliwatts
- TJ: -65 to 200 C
- Number of Transistors in the Chip: 1
-
Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- VCEO: -12 volts
- IC(max): -500 milliamps
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
Find Suppliers by Category Top
Featured Products Top
-
The Microchip 2N2907AUB is a high-performance PNP bipolar transistor offering excellent flexibility for multiple electronic applications. With its robust 600mA collector current capacity and a collector-emitter voltage (VCEO) of 60V, this component is designed to (read more)
Browse RF Transmitters Datasheets for LIXINC Electronics Co., Limited -
Transition Frequency (fT): 300MHz, excellent for high-frequency applications Complementary PNP Transistor: SMMBT3906LT3G for push (read more)
Browse Transistors Datasheets for Win Source Electronics -
available RF Power Amplifier product portfolio for wireless infrastructure that spans multiple levels of integration, including; discrete transistors, multistage IC’s, and multi-chip modules (MCM), as well as leveraging GaN and Silicon LDMOS from the latest cutting edge NXP fabs (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Principle Low Dropout Regulators (LDOs) mainly ensure that the output voltage is steady. This output voltage is higher than the input power. It usually uses a P-channel MOSFET or a PNP bipolar junction transistor (BJT) to drive it carefully. This keeps it just under the set (read more)
Browse General Purpose Diodes Datasheets for ODG (Origin Data Global) -
. Ceramics can withstand high current, can be high voltage, can prevent leakage breakdown, have no noise, will not generate coupling parasitic capacitance with power tubes such as MOS, and thus simplify the filtering process. Aluminum nitride ceramic thermal insulator (read more)
Browse Aluminum Oxide and Alumina Ceramics Datasheets for Xiamen Innovacera Advanced Materials Co., Ltd. -
this change and switch the output transistor. This sensing method allows the sensor to identify metallic objects without direct physical contact. It is particularly useful in industrial environments where a mechanical switch could be damaged by repeated (read more)
Browse Automotive Electrical Connectors Datasheets for ERSAELECTRONICS PTE. LTD. -
automatically balance leakage currents and manage over-voltage, enabling ultra-low power usage in supercapacitors used in a series stack. The board uses ALD’s SAB MOSFETs to balance the leakage current in each individual supercapacitor cell, even for cells of 3000 Farad (F) or more. The PCB (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc.
More Information Top
Indicates content that may require registration and/or purchase.
-
Mje34 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array, Integrated Circuits and Semiconductors — Product Line
Type » Transistors ; Bipolar; Si PNP Power MJE34 Specifications .