Mje34 Pnp Power Transistors

Description: Manufacturer: ON Semiconductor Win Source Part Number: 884911-MJE371 Operating Temperature Range: -65°C ~ 150°C (TJ) Features: Bipolar (BJT) Transistor PNP 40 V 4 A - 40 W Through Hole TO-126 Package: Bulk Package: TO-225AA, TO-126-3 Mounting: Through Hole Part Status: Obsolete Family

• Features: Other
• Polarity: PNP
• Package Type: SOT3

Description: Manufacturer: STMicroelectronics Win Source Part Number: 809446-MJE210 Packaging: Tube Mounting Style: Through Hole Power - Max: 1.5W Transistor Type: PNP Frequency - Transition: 65MHz Part Status: Obsolete (End Of Life) Supplier Device Package: SOT-32-3 Temperature Range -

• T_J: 150 C
• Power Gain: 45 dB
• Output Power: 1.5 watts
• Operating Frequency: 65 MHz

Description: Manufacturer: ON Semiconductor Win Source Part Number: 058935-MJE350G Packaging: Bulk Mounting: Through Hole Transistor Polarity: PNP Family Name: MJE350 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package:

• Features: Other
• Polarity: PNP
• Package Type: SOT3

Description: Manufacturer: ON Semiconductor Win Source Part Number: 884917-MJE703G Operating Temperature Range: -55°C ~ 150°C (TJ) Features: Bipolar (BJT) Transistor PNP - Darlington 80 V 4 A - 40 W Through Hole TO-126 Package: TO-225AA, TO-126-3 Package: Bulk Mounting: Through Hole Family Name:

• Features: Other
• Polarity: PNP
• Package Type: SOT3

Description: Bipolar Transistors - BJT PNP Medium Power

• Transistor Type: Bipolar RF Transistors

Description: Darlington Transistors 4A 80V Bipolar Power PNP

• Transistor Type: Darlington

Description: BIPOLAR TRANSISTOR, PNP, -40V, SOT-223, FULL REEL; Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:3A; Power Dissipation:2W; Transistor Mounting:Surface Mount; No. of Pins:4Pins RoHS Compliant: Yes

Description: TRANS PNP DARL 80V 4A TO126

• I_C(max): 4,000 milliamps
• V_CEO: 80 volts
• Output Power: 40 watts
• T_J: -55 to 150 C

Description: 2A, 100V, PNP, Si, POWER TRANSISTOR, TO-225, CASE 77-09, 3 PIN Product overview: MJE271 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers

• I_C(max): 2,000 milliamps
• V_CEO: 100 volts
• V_CBO: 100 volts
• f_T: 6 MHz

Description: Bipolar (BJT) Transistor PNP - Darlington 80V 4A 40W Through Hole TO-126

• Features: Other
• Polarity: PNP

Description: PNP Darlington Power Transistor, 80V, 4A, TO-225 Product overview: MJE703G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers

• I_C(max): 4,000 milliamps
• V_CEO: 80 volts
• V_CBO: 80 volts
• P_D: 40,000 milliwatts

Description: PNP Darlington Power Transistor, 60V, 4A, TO-225 Product overview: MJE700G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers

• I_C(max): 4,000 milliamps
• V_CEO: 60 volts
• V_CBO: 60 volts
• P_D: 40,000 milliwatts

Description: PNP BJT 100V 4A TO-225 Power Transistor Product overview: MJE253G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing

• I_C(max): 4,000 milliamps
• V_CEO: 100 volts
• V_CBO: 100 volts
• f_T: 40 MHz

Description: 750@3V,2A 80V PNP 4A 40W TO-225-3 Darlington Transistors ROHS

• h_fe: 750
• V_CEO: 80 volts
• I_C(max): 4,000 milliamps
• P_D: 40,000 milliwatts

Description: BIPOLAR TRANSISTOR, PNP, DUAL, -30V SOT563, FULL REEL; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; DC Collector Current:100mA; Power Dissipation Pd:500mW; DC Current Gain hFE:520hFE; No. of Pins:6Pins RoHS Compliant: Yes

Description: Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin

• Transistor Type: Bipolar RF Transistors, Power BJT Transistors, Power MOSFET
• Features: Bulk Pack, Other
• Polarity: PNP

Description: TRANS PNP 100V 3.7A SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:100MHz; Power Dissipation Pd:600mW; DC Collector Current:-3.7A; DC Current Gain hFE:300hFE; Transistor Case RoHS Compliant: Yes

Description: TRANS PNP 40V 4A TO126

• V_CEO: 40 volts
• I_C(max): 4,000 milliamps
• Features: Bulk Pack, Other
• Transistor Type: General Purpose BJT

Description: PNP power transistor,MJE15031 8A

• Transistor Type: General Purpose BJT
• Features: Other
• Polarity: PNP
• Package Type: TO-220

Description: PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX19 Features and benefits High current (max. 500 mA) Low voltage (max. 45 V) AEC-Q101 qualified Applications Saturated switching and driver applications e.g. for industrial

• h_fe: 100 to 600
• V_CEO: -45 volts
• I_C(max): -500 milliamps
• P_D: 250 milliwatts

Description: Transistor, PNP, -1A, -100V, 63-250hFE, SOT-223

• V_CEO: -100 volts
• I_C(max): -1,000 milliamps
• Transistor Type: General Purpose BJT
• Features: Other, Tape Reel

Description: PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 65 V) Applications General-purpose switching and amplification

• h_fe: 125 to 800
• V_CEO: -45 volts
• I_C(max): -100 milliamps
• P_D: 200 milliwatts

Description: PNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and soldarable side pads. Features and benefits General-purpose transistors Three current gain selections Low package height of 0.37 mm

• h_fe: 420 to 800
• V_CEO: -45 volts
• I_C(max): -100 milliamps
• P_D: 280 milliwatts

Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) Potential Applications For AF input stages

• I_C(max): 100 milliamps
• V_CEO: 30 volts
• V_CBO: 30 volts
• f_T: 250 MHz

Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Fast Switching Transistor // SMBT3906S

• I_C(max): 200 milliamps
• V_CEO: 40 volts
• V_CBO: 40 volts
• Transistor Type: Bipolar RF Transistors

Description: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 100mA 250MHz 200mW Surface Mount UMT3F

• Transistor Grade / Operating Range: Automotive
• Features: Other
• Polarity: PNP

Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX53

• I_C(max): 1,000 milliamps
• V_CEO: 80 volts
• V_CBO: 100 volts
• Transistor Type: Bipolar RF Transistors

Description: PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 2.2 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101

• V_CEO: 50 volts
• V_CBO: 50 volts
• f_T: 150 MHz
• h_fe: 70

Description: The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the

• h_fe: 50 to 75
• V_CEO: 36 volts
• V_CBO: -36 to -40 volts
• I_C(max): -10 to -20 milliamps

Description: Trans GP BJT PNP 120V 25A 3-Pin(2+Tab) TO-3

• I_C(max): 25,000 milliamps
• P_D: 200,000 milliwatts
• T_J: 125 C
• Transistor Type: Darlington

Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also

• h_fe: 175
• V_CEO: 60 volts
• V_CBO: 60 volts
• I_C(max): 600 milliamps

Description: 2SAR583D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier. It is a highly reliable product for automotive.

• P_D: 10,000 milliwatts
• T_J: -55 to 150 C
• Transistor Grade / Operating Range: Commercial
• Features: Other, Tape Reel

Description: The LS3550 Monolithic Dual and Single, PNP Transistor is a Higher Current Version of the MP350, MP 351, and MP352 Series. It is ideal for Small Signal Transistor, Super Beta Amplifier & Switching Applications. Available in PDIP 8L ROHS, TO-71 6L ROHS, TO-78 6L ROHS, SOIC 8L

• Transistor Type: General Purpose BJT
• Features: Other
• Polarity: PNP
• Package Type: SOT23

Description: NXP PBHV9040XBipolar (BJT) Single Transistor, PNP, -400 V, 55 MHz, 1.5 W, -250 mA, 10

• Transistor Type: Bipolar RF Transistors, General Purpose BJT
• Polarity: PNP

Description: Silicon Complementary Transistor Audio Power Amplifier, PNP Transistor Type +150 °C maximum operating temperature Designed for use in high power, high fidelity audio frequency amplifier applications.