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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 884911-MJE371 Operating Temperature Range: -65°C ~ 150°C (TJ) Features: Bipolar (BJT) Transistor PNP 40 V 4 A - 40 W Through Hole TO-126 Package: Bulk Package: TO-225AA, TO-126-3 Mounting: Through Hole Part Status: Obsolete Family
- Features: Other
- Polarity: PNP
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 809446-MJE210 Packaging: Tube Mounting Style: Through Hole Power - Max: 1.5W Transistor Type: PNP Frequency - Transition: 65MHz Part Status: Obsolete (End Of Life) Supplier Device Package: SOT-32-3 Temperature Range -
- TJ: 150 C
- Power Gain: 45 dB
- Output Power: 1.5 watts
- Operating Frequency: 65 MHz
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 131275-MJE271 Packaging: Bulk Mounting: Through Hole Frequency - Transition: 6MHz Transistor Polarity: PNP - Darlington Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 150°C
- Features: Other
- Polarity: PNP
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 1223706-MJE171 Packaging: Bulk Mounting Style: Through Hole Transistor Type: PNP Frequency - Transition: 50MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-225AA Status: Obsolete Temperature Range -
- TJ: -65 to 150 C
- Power Gain: 50 dB
- Output Power: 12.5 watts
- Operating Frequency: 50 MHz
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PNP Medium Power
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Darlington Transistors 4A 80V Bipolar Power PNP
- Transistor Type: Darlington
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Supplier: DigiKey
Description: SILICON PNP POWER TRANSISTOR, TO
- Features: Other
- Polarity: PNP
- Package Type: TO-220
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Supplier: ODG (Origin Data Global)
Description: TRANS PNP DARL 80V 4A TO126
- IC(max): 4,000 milliamps
- VCEO: 80 volts
- Output Power: 40 watts
- TJ: -55 to 150 C
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: 2A, 100V, PNP, Si, POWER TRANSISTOR, TO-225, CASE 77-09, 3 PIN Product overview: MJE271 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers
- IC(max): 2,000 milliamps
- VCEO: 100 volts
- VCBO: 100 volts
- fT: 6 MHz
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, -40V, SOT-223, FULL REEL; Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:3A; Power Dissipation:2W; Transistor Mounting:Surface Mount; No. of Pins:4Pins RoHS Compliant: Yes
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 750@3V,2A 80V PNP 4A 40W TO-225-3 Darlington Transistors ROHS
- hfe: 750
- VCEO: 80 volts
- IC(max): 4,000 milliamps
- PD: 40,000 milliwatts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: 3.0 A PNP Bipolar Power Transistor, TO-225, 500-BLKBX Product overview: MJE170 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and
- Transistor Type: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: PNP Darlington Power Transistor, 80V, 4A, TO-225 Product overview: MJE703G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers
- IC(max): 4,000 milliamps
- VCEO: 80 volts
- VCBO: 80 volts
- PD: 40,000 milliwatts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: 4.0 A, 40 V PNP Bipolar Power Transistor, TO-225, 500-BLKBX Product overview: MJE371 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers
- IC(max): 4,000 milliamps
- VCEO: 40 volts
- VCBO: 40 volts
- PD: 40,000 milliwatts
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, DUAL, -30V SOT563, FULL REEL; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; DC Collector Current:100mA; Power Dissipation Pd:500mW; DC Current Gain hFE:520hFE; No. of Pins:6Pins RoHS Compliant: Yes
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Supplier: Rochester Electronics
Description: Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
- Transistor Type: Bipolar RF Transistors, Power BJT Transistors, Power MOSFET
- Features: Bulk Pack, Other
- Polarity: PNP
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Supplier: Newark, An Avnet Company
Description: TRANS PNP 100V 3.7A SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:100MHz; Power Dissipation Pd:600mW; DC Collector Current:-3.7A; DC Current Gain hFE:300hFE; Transistor Case RoHS Compliant: Yes
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Description: TRANS PNP 40V 4A TO126
- VCEO: 40 volts
- IC(max): 4,000 milliamps
- Features: Bulk Pack, Other
- Transistor Type: General Purpose BJT
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Supplier: RS Components, Ltd.
Description: PNP power transistor,MJE15029 8A
- Number of Transistors in the Chip: 1
- Transistor Type: General Purpose BJT
- Features: Other
- Polarity: PNP
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Supplier: Nexperia B.V.
Description: PNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and soldarable side pads. Features and benefits General-purpose transistors Three current gain selections Low package height of 0.37 mm
- hfe: 420 to 800
- VCEO: -45 volts
- IC(max): -100 milliamps
- PD: 280 milliwatts
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Supplier: New Yorker Electronics Co., Inc.
Description: Transistor, PNP, -100mA, -80V, 220-475hFE, SOT-23
- VCEO: -80 volts
- IC(max): -100 milliamps
- Transistor Type: General Purpose BJT
- Features: Other, Tape Reel
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Supplier: Nexperia B.V.
Description: PNP/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC846BS NPN/PNP complement: BC846BPN Features and benefits Low collector capacitance Low collector-emitter saturation voltage Closely matched current
- hfe: 200 to 450
- VCEO: -65 volts
- IC(max): -100 milliamps
- PD: 200 milliwatts
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Supplier: Nexperia B.V.
Description: PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 65 V) Applications General-purpose switching and amplification
- hfe: 125 to 800
- VCEO: -45 volts
- IC(max): -100 milliamps
- PD: 200 milliwatts
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Supplier: Nexperia B.V.
Description: PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX19 Features and benefits High current (max. 500 mA) Low voltage (max. 45 V) AEC-Q101 qualified Applications Saturated switching and driver applications e.g. for industrial
- hfe: 100 to 600
- VCEO: -45 volts
- IC(max): -500 milliamps
- PD: 250 milliwatts
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX53
- IC(max): 1,000 milliamps
- VCEO: 80 volts
- VCBO: 100 volts
- Transistor Type: Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 2.2 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101
- VCEO: 50 volts
- VCBO: 50 volts
- fT: 150 MHz
- hfe: 70
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Fast Switching Transistor // SMBT3906S
- IC(max): 200 milliamps
- VCEO: 40 volts
- VCBO: 40 volts
- Transistor Type: Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) Potential Applications For AF input stages
- IC(max): 100 milliamps
- VCEO: 30 volts
- VCBO: 30 volts
- fT: 250 MHz
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans GP BJT PNP 25V 12A
- IC(max): 12,000 milliamps
- PD: 36,000 milliwatts
- TJ: 150 C
- Transistor Type: Darlington
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Supplier: Semicoa
Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also
- hfe: 175
- VCEO: 40 volts
- VCBO: 60 volts
- IC(max): 600 milliamps
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Supplier: Utmel Electronic Limited
Description: Trans GP BJT PNP 100V 5A 3-Pin TO-39
- IC(max): 5,000 milliamps
- PD: 1,000 milliwatts
- TJ: -65 to 200 C
- Number of Transistors in the Chip: 1
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Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- VCEO: -12 volts
- IC(max): -500 milliamps
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
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Supplier: Newark, An Avnet Company
Description: Bipolar (BJT) Single Transistor, PNP, -65 V, 200 MHz, 200 mW, -100 mA, 290 RoHS Compliant: Yes
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Supplier: ODG (Origin Data Global)
Description: HIGH FREQUENCY TRANSISTOR ARRAY
- IC(max): 65 milliamps
- VCEO: 8 volts
- Noise Figure: 3.5 dB
- Operating Frequency: 5,500 MHz
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, DARLINGTON PNP 4A 100V, TO225AA PKG
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Mje34 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array, Integrated Circuits and Semiconductors — Product Line
Type » Transistors ; Bipolar; Si PNP Power MJE34 Specifications .