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Supplier: Acme Chip Technology Co., Limited
Description: JFET P-Channel 40V Low Ciss
- Transistor Type: JFET
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Supplier: Acme Chip Technology Co., Limited
Description: JFET P-Channel 30V Low Noise
- Transistor Type: JFET
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Supplier: Acme Chip Technology Co., Limited
Description: JFET P-Channel 25V Low Ciss
- Transistor Type: JFET
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Supplier: Utmel Electronic Limited
Description: NXP PMBFJ174,215 P-channel JFET Transistor, 30 V, Idss 20135mA, 3-Pin SOT-23
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: Linear Systems
Description: GENERAL PURPOSE SINGLE P-CHANNEL JFET
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: Linear Systems
Description: LOW NOISE, LOW CAPACITANCE SINGLE P-CHANNEL JFET
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: VAST STOCK CO., LIMITED
Description: JFET JFET P-Channel Reel of 1000
- Transistor Type: JFET
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Supplier: Linear Systems
Description: The 2N5114 Series Low On-Resistance, P-Channel JFET Switch is a direct replacement for Siliconix-Vishay equivalent part. It is ideal for Low Resistance, Low Capacitance Switching Applications. Available in TO-18 3L ROHS package, as well as Tested Die. All Linear Systems devices are
- Package Type: Other
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 225mW 2mA@15V P-Channel 30V SOT-23 JFETs ROHS
- Package Type: SOT23
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: VAST STOCK CO., LIMITED
Description: JFET P-Channel Switch
- Transistor Type: JFET
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Supplier: Linear Systems
Description: This dual P-Channel JFET amplifier is designed to provide a balance between very low noise (en = 2.0nV/vHz) and very low input capacitance (Ciss = 8pF).
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: VAST STOCK CO., LIMITED
Description: JFET JFET P-Channel -30V 50mA 360mW 3.27mW
- Transistor Type: JFET
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Supplier: VAST STOCK CO., LIMITED
Description: JFET JFET P-Channel -30V 50mA 360mW 2.8mW
- Transistor Type: JFET
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 225mW 7mA@15V P-Channel 125O 30V SOT-23 JFETs ROHS
- Package Type: SOT23
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 225mW 1.5mA@15V P-Channel 300O 30V SOT-23 JFETs ROHS
- Package Type: SOT23
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS
- Transistor Type: JFET
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans JFET P-CH 3-Pin TO-226AA
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: P-CHANNEL SILICON JUNCTION FET
- Transistor Type: JFET
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Supplier: DigiKey
Description: JFET P-Channel 30V 350mW Through Hole TO-92-3
- Package Type: TO-92, Other
- Polarity: P-Channel
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans JFET P-CH 3-Pin TO-18
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: Utmel Electronic Limited
Description: JFET P-CH 40V 0.225W SOT23
- Polarity: P-Channel, Other
- Transistor Type: JFET
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Supplier: DigiKey
Description: JFET P-Channel 30V 300mW Surface Mount SOT-23 (TO-236AB)
- Package Type: SOT23, Other
- Polarity: P-Channel
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Supplier: DigiKey
Description: JFET P-Channel 30V 350mW Surface Mount SOT-23
- Package Type: SOT23, Other
- Polarity: P-Channel
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Supplier: DigiKey
Description: JFET P-Channel 40V 225mW Surface Mount SOT-23-3
- Package Type: SOT23, Other
- Polarity: P-Channel
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1037502-2SJ03640QL Category: Discrete Semiconductor Products>Transistors - JFETs Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) FET Type: P-Channel Power - Max: 150 mW Current - Drain (Idss) @ Vds (Vgs=0): 600
- Package Type: SOT3
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: Allied Electronics, Inc.
Description: Silicon P-Channel JFET Transistor General Purpose AF Amplifier Current gate is 10 mA Voltage gate to source cutoff is 7.5 V.
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Supplier: Rochester Electronics
Description: Small Signal Field-Effect Transistor, P-Channel JFET, TO-236AB
- Package Type: Other
- Polarity: P-Channel
- Transistor Type: JFET, MOSFET RF Transistors
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Supplier: Rochester Electronics
Description: Small Signal Field-Effect Transistor, P-Channel JFET
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
- Polarity: P-Channel
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Supplier: RS Components, Ltd.
Description: Transistor JFET P-Channel SOT23 - Discrete Semiconductors - JFET Transistors
- Package Type: SOT23, Other
- Polarity: P-Channel
- rDS(on): 300 ohms
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Supplier: LIXINC Electronics Co., Limited
Description: P-CHANNEL JFET, TO-236AB
- Package Type: SOT23, Other
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1188070-2N4338-E3 Category: Discrete Semiconductor Products>Transistors - JFETs Package: Bulk Standard Package: 200 FET Type: N-Channel Power - Max: 300 mW Voltage - Breakdown (V(BR)GSS): 50 V Current - Drain (Idss) @ Vds (Vgs=0): 200
- Package Type: SOT3
- Polarity: N-Channel
- TJ: -55 to 175 C
- VGS(off): 0.3000 volts
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Supplier: Win Source Electronics
Description: Manufacturer: Microsemi Corporation Win Source Part Number: 1123794-2N3822 Packaging: Bulk Mounting Style: Through Hole Transistor Polarity: N-Channel Voltage - Breakdown (V(BR)GSS): 50V Categories: Discrete Semiconductor Products Supplier Device Package: TO-72
- Output Power: 0.3000 watts
- Package Type: SOT3
- Packing Method: Bulk Pack, Other
- Polarity: N-Channel, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 107594-2SK3320-GR Category: Discrete Semiconductor Products Family: Transistors - JFETs Packaging: Reel Mounting Style: SMD/SMT Package: 5-TSSOP, SC-70-5, SOT-353 Manufacturer Device Package: USV
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Description: JFET N-CH 40V TO18
- Package Type: Other
- Transistor Type: JFET
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Featured Products Top
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The UJ4C075033L8S is a 750V, 33 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off (read more)
Browse RF Transistors Datasheets for Qorvo -
The UJ4C075060L8S is a 750V, 58 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use (read more)
Browse RF Transistors Datasheets for Qorvo -
The UJ4C075044L8S is a 750V, 44 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off (read more)
Browse RF Transistors Datasheets for Qorvo -
The UJ4C075023L8S is a 750V, 23 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use (read more)
Browse RF Transistors Datasheets for Qorvo -
UJ4SC075009B7S is an AEC-Q101 Qualified 750 V, 9 m? Gen 4 SiC FET. Its distinctive stacked cascode circuit configuration integrates a normally-on SiC JFET alongside a Si MOSFET, resulting in a (read more)
Browse RF Transistors Datasheets for RFMW -
The Qorvo QPD1011 is a 7W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 1.2 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region (read more)
Browse Transistors Datasheets for Qorvo -
Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating (read more)
Browse Transistors Datasheets for Qorvo -
Qorvo's QPD2040D is a discrete 400-micron pHEMT which operates from DC to 20 GHz. The QPD2040D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating (read more)
Browse Transistors Datasheets for Qorvo -
New Yorker Electronics has announced its availability of the new Good-Ark Semiconductor SSF2418E 6A/20V Dual N-Channel MOSFET with ESD protection in the SOT-23-6L package. The SSF2418E (read more)
Browse Transistors Datasheets for Omni Pro Electronics, Inc. -
-20V, P ch NexFET MOSFET™, single SON 2x2, 23.9mOhm 6-WSON -55 to 150 Specifications Manufacturer: Texas Instruments (read more)
Browse Transistors Datasheets for Utmel Electronic Limited
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Current single event effects and radiation damage results for candidate spacecraft electronics
The 2N5114 40V P channel JFET transistor was tested to a total dose of 50 krad(Si) at a dose rate < 1 rad/s.
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MMBFJ175LT1G: P-Channel JFET Transistor, 30 V
MMBFJ175L: P - Channel JFET Transistor , 30 V .
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MMBFJ175L: P-Channel JFET Transistor, 30 V
MMBFJ175L: P - Channel JFET Transistor , 30 V .
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MMBFJ175L: P-Channel JFET Transistor, 30 V
MMBFJ175L: P - Channel JFET Transistor , 30 V .
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P-Channel JFET Transistor (Parametric Search) | Microsemi
P - Channel JFET Transistor (Parametric Search .
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2N5461_D26Z Fairchild Semiconductor | Mouser
JFET P - Channel Transistor General Purpose .
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Page 7. Semiconductor parts with 460 in root number
Silicon P - channel JFET transistor .
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Complementary logic with 60 nm poly gate JFET for 0.5 V operation
For the first time, complementary logic based on an enhancement mode JFET (cJFET), consisting of n- and p - channel JFET transistors built on bulk silicon and SOI with 60 nm gate length operating at 0.5 V has been demonstrated.
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Enhanced total dose damage in junction field effect transistors and related linear integrated circuits
Schematic cross-section representation of p - channel JFET transistors used in this study.
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An analog/digital BCDMOS technology with dielectric isolation-devices and processes
The normally-on p - channel JFET transistor is important for many applica- .