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Supplier: Utmel Electronic Limited
Description: NXP PMBFJ174,215 P-channel JFET Transistor, 30 V, Idss 20135mA, 3-Pin SOT-23
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: Acme Chip Technology Co., Limited
Description: JFET P-Channel 30V Low Noise
- Transistor Type: JFET
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Supplier: Acme Chip Technology Co., Limited
Description: JFET P-Channel 40V Low Ciss
- Transistor Type: JFET
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Supplier: Acme Chip Technology Co., Limited
Description: JFET P-Channel 25V Low Ciss
- Transistor Type: JFET
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Supplier: VAST STOCK CO., LIMITED
Description: JFET JFET P-Channel Reel of 1000
- Transistor Type: JFET
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Supplier: VAST STOCK CO., LIMITED
Description: JFET P-Channel Switch
- Transistor Type: JFET
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Supplier: Linear Systems
Description: GENERAL PURPOSE SINGLE P-CHANNEL JFET
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: Linear Systems
Description: LOW NOISE, LOW CAPACITANCE SINGLE P-CHANNEL JFET
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: Linear Systems
Description: The 2N5114 Series Low On-Resistance, P-Channel JFET Switch is a direct replacement for Siliconix-Vishay equivalent part. It is ideal for Low Resistance, Low Capacitance Switching Applications. Available in TO-18 3L ROHS package, as well as Tested Die. All Linear Systems devices are
- Package Type: Other
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 225mW 2mA@15V P-Channel 30V SOT-23 JFETs ROHS
- Package Type: SOT23
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: VAST STOCK CO., LIMITED
Description: JFET JFET P-Channel -30V 50mA 360mW 3.27mW
- Transistor Type: JFET
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Supplier: VAST STOCK CO., LIMITED
Description: JFET JFET P-Channel -30V 50mA 360mW 2.8mW
- Transistor Type: JFET
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS
- Transistor Type: JFET
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Supplier: Linear Systems
Description: This dual P-Channel JFET amplifier is designed to provide a balance between very low noise (en = 2.0nV/vHz) and very low input capacitance (Ciss = 8pF).
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans JFET P-CH 3-Pin TO-226AA
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: P-CHANNEL SILICON JUNCTION FET
- Transistor Type: JFET
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans JFET P-CH 0.5V 5mA
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: ODG (Origin Data Global)
Description: JFET P-CH 30V 0.225W SOT23
- Package Type: SOT23, Other
- Polarity: P-Channel, Other
- Transistor Type: JFET
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Supplier: ODG (Origin Data Global)
Description: JFET P-CH 40V 0.225W SOT23
- Package Type: SOT23, Other
- Polarity: P-Channel, Other
- Transistor Type: JFET
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Supplier: ODG (Origin Data Global)
Description: JFET P-CH 40V 0.35W TO92
- Package Type: TO-92, Other
- Polarity: P-Channel, Other
- Transistor Type: JFET
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Supplier: ODG (Origin Data Global)
Description: JFET P-CH 30V 0.35W TO92
- Package Type: TO-92, Other
- Polarity: P-Channel, Other
- Transistor Type: JFET
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 225mW 1.5mA@15V P-Channel 300O 30V SOT-23 JFETs ROHS
- Package Type: SOT23
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 225mW 7mA@15V P-Channel 125O 30V SOT-23 JFETs ROHS
- Package Type: SOT23
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: DigiKey
Description: JFET P-Channel 30V 350mW Through Hole TO-92-3
- Package Type: TO-92, Other
- Polarity: P-Channel
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Supplier: Utmel Electronic Limited
Description: JFET P-CH 40V 0.225W SOT23
- Polarity: P-Channel, Other
- Transistor Type: JFET
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1037502-2SJ03640QL Category: Discrete Semiconductor Products>Transistors - JFETs Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) FET Type: P-Channel Power - Max: 150 mW Current - Drain (Idss) @ Vds (Vgs=0): 600
- Package Type: SOT3
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: DigiKey
Description: JFET P-Channel 30V 225mW Surface Mount SOT-23-3
- Package Type: SOT23, Other
- Polarity: P-Channel
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Supplier: DigiKey
Description: JFET P-Channel 30V 400mW Through Hole TO-92-3
- Package Type: TO-92, Other
- Polarity: P-Channel
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Supplier: DigiKey
Description: JFET P-Channel 30V 300mW Surface Mount SOT-23 (TO-236AB)
- Package Type: SOT23, Other
- Polarity: P-Channel
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Supplier: RS Components, Ltd.
Description: Transistor JFET P-Channel SOT23 - Discrete Semiconductors - JFET Transistors
- Package Type: SOT23, Other
- Polarity: P-Channel
- rDS(on): 300 ohms
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Supplier: Radwell International
Description: JFET JFET P-CHANNEL -40V 50MA 500MW 3MW . FREE 2 YEAR RADWELL WARRANTY
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1188070-2N4338-E3 Category: Discrete Semiconductor Products>Transistors - JFETs Package: Bulk Standard Package: 200 FET Type: N-Channel Power - Max: 300 mW Voltage - Breakdown (V(BR)GSS): 50 V Current - Drain (Idss) @ Vds (Vgs=0): 200
- Package Type: SOT3
- Polarity: N-Channel
- TJ: -55 to 175 C
- VGS(off): 0.3000 volts
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Supplier: Win Source Electronics
Description: Manufacturer: Microsemi Corporation Win Source Part Number: 1123794-2N3822 Packaging: Bulk Mounting Style: Through Hole Transistor Polarity: N-Channel Voltage - Breakdown (V(BR)GSS): 50V Categories: Discrete Semiconductor Products Supplier Device Package: TO-72
- Output Power: 0.3000 watts
- Package Type: SOT3
- Packing Method: Bulk Pack, Other
- Polarity: N-Channel, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 107594-2SK3320-GR Category: Discrete Semiconductor Products Family: Transistors - JFETs Packaging: Reel Mounting Style: SMD/SMT Package: 5-TSSOP, SC-70-5, SOT-353 Manufacturer Device Package: USV
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
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The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With (read more)
Browse Transistors Datasheets for Win Source Electronics -
Nexperia has expanded its portfolio of 650 V industrial-grade GaN FETs for power conversion applications. The range includes 35 mΩ, 50 mΩ and 70 mΩ devices in TO-247-3, TO-247-4, TOLL and TOLT packages. The additions give engineers greater flexibility to optimise efficiency, thermal performance and power density across datacenter, telecom, renewable energy, BESS and ind...
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The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics -
Explore the features and specifications of the BSS138PW,115 N-channel MOSFET from Nexperia USA Inc. This MOSFET is designed for a wide range of electronic applications, offering a balanced supply and demand status and medium popularity. With a drain-source breakdown voltage of 60V and a (read more)
Browse Transistors Datasheets for Win Source Electronics -
The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
High-performance WSF15N10 MOSFET in TO-252 package offers low on-resistance and fast switching, ideal for power management and motor control applications.
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Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
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IAV and Nexperia are exploring a new high-voltage EV architecture through the ONE Inverter concept. Combining IAV’s software-defined system and battery control expertise with Nexperia’s wide-bandgap semiconductor technologies, the approach enables more efficient use of battery capacity by dynamically managing battery sections and combining power electronics functions in one s...
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New Nexperia 600 V IGBTs. Ideally suited for industrial motor drive applications, including industrial motor drives like servo motors, robotics, elevators, operating grippers, in-line manufacturing, power inverters, UPS, photovoltaic strings, EV-charging, and induction heating and welding. The portfolio leads with devices across 30 - 75 A.
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Current single event effects and radiation damage results for candidate spacecraft electronics
The 2N5114 40V P channel JFET transistor was tested to a total dose of 50 krad(Si) at a dose rate < 1 rad/s.
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MMBFJ175LT1G: P-Channel JFET Transistor, 30 V
MMBFJ175L: P - Channel JFET Transistor , 30 V .
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MMBFJ175L: P-Channel JFET Transistor, 30 V
MMBFJ175L: P - Channel JFET Transistor , 30 V .
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MMBFJ175L: P-Channel JFET Transistor, 30 V
MMBFJ175L: P - Channel JFET Transistor , 30 V .
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P-Channel JFET Transistor (Parametric Search) | Microsemi
P - Channel JFET Transistor (Parametric Search .
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2N5461_D26Z Fairchild Semiconductor | Mouser
JFET P - Channel Transistor General Purpose .
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Page 7. Semiconductor parts with 460 in root number
Silicon P - channel JFET transistor .
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Complementary logic with 60 nm poly gate JFET for 0.5 V operation
For the first time, complementary logic based on an enhancement mode JFET (cJFET), consisting of n- and p - channel JFET transistors built on bulk silicon and SOI with 60 nm gate length operating at 0.5 V has been demonstrated.
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Enhanced total dose damage in junction field effect transistors and related linear integrated circuits
Schematic cross-section representation of p - channel JFET transistors used in this study.
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An analog/digital BCDMOS technology with dielectric isolation-devices and processes
The normally-on p - channel JFET transistor is important for many applica- .