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Supplier: New Yorker Electronics Co., Inc.
Description: MOSFET, P-Channel, -25V, -0.85A, SOT-23
- V(BR)DSS: -25 volts
- IDSS: -850 milliamps
- Features: MOSFET, Other
- Polarity: P-Channel
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor,
- gfs: 0.0019 kS
- PD: 2.4 milliwatts
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
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Supplier: Newark, An Avnet Company
Description: P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:900mV; Power Dissipation:750mW RoHS Compliant: Yes
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Supplier: Infineon Technologies AG
Description: N-Channel Power MOSFET IRF4905S | P-Channel Power MOSFET IPB036N12N3 G | N-Channel Power MOSFET BSC117N08NS5 | N-Channel Power MOSFET IRF7842 | N-Channel Power MOSFET IAUT300N10S5N015 | Automotive MOSFET BSC016N06NS
- rDS(on): 0.199 ohms
- QG: 38 nC
- TJ: 150 C
- VGS(off): 8 volts
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Supplier: Microchip Technology, Inc.
Description: The MIC94052/94053 are low on-resistance, 84mW(max) P-channel MOSFETs. They are housed in a Teeny™ SC-70-6 package. Designed for high-side switch applications where space is critical, the MIC94052/3 exhibit a typical on-resistance of 70mΩ at 4.5V gate-to-source voltage. The
- Features: MOSFET
- Polarity: P-Channel
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Supplier: Utmel Electronic Limited
Description: P-CHANNEL MOSFET, SOT-23 PACKAGE
- PD: 350 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
- Polarity: P-Channel
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Supplier: Utmel Electronic Limited
Description: P-CHANNEL,MOSFETS,SOT-23 PACKAGE
- PD: 1,400 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
- Polarity: P-Channel
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array N and P-Channel Complementary 10.6V - 500mW Surface Mount 8-SOIC
- V(BR)DSS: 12 volts
- IDSS: -2 to 4.8 milliamps
- rDS(on): 500 to 1,800 ohms
- TJ: 0 to 70 C
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Supplier: Microchip Technology, Inc.
Description: The MIC94050 and MIC94051 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package. Designed for high-side switch applications where space is critical, the MIC94050/1 exhibits an on-resistance of typically 0.125 Ohm at 4.5V
- Features: MOSFET
- Polarity: P-Channel
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Metal-Oxide Semiconductor FET (MOSFET) - Avalanche Rated P-channel MOSFET Transistor -- SFF110P20FP5Supplier: Solid State Devices, Inc.
Description: Features: TrenchMOS technology Lowest ON-resistance in the industry Avalanche rated Hermetically Sealed, Hot Case power SMD Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available 2/ Improved (RDS(ON) QG) figure of merit
- V(BR)DSS: 240 volts
- IDSS: 0.3 milliamps
- VGS(off): 4.5 volts
- rDS(on): 0.035 ohms
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 P-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC
- V(BR)DSS: 12 volts
- IDSS: -16 milliamps
- rDS(on): 270 ohms
- TJ: 0 to 70 C
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Supplier: Nexperia B.V.
Description: P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of
- V(BR)DSS: -20 volts
- IDSS: -4,700 milliamps
- VGS(off): 0.65 volts
- rDS(on): 0.084 ohms
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Supplier: Nexperia B.V.
Description: P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.98 × 1.48 × 0.35 mm Trench MOSFET technology ElectroStatic
- V(BR)DSS: -12 volts
- IDSS: -8,200 milliamps
- VGS(off): 0.6 volts
- rDS(on): 0.033 ohms
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Features: MOSFET
- Polarity: P-Channel
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Supplier: Littelfuse, Inc.
Description: Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching
- Features: Other
- Polarity: P-Channel
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Supplier: Accuris
Description: A Procedure for Measuring P-Channel MOSFET Negative Bias Temperature Instabilities
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Supplier: Utmel Electronic Limited
Description: MOSFET Dual P-Channel Nex FET Power MOSFET
- V(BR)DSS: 20 volts
- rDS(on): 0.07 ohms
- QG: 5.8999999999999995 nC
- PD: 1,500 milliwatts
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Supplier: Texas Instruments
Description: Single P-channel Enhancement-Mode MOSFET 16-TSSOP
- Features: MOSFET
- Polarity: P-Channel
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Supplier: Texas Instruments
Description: Single P-channel Enhancement-Mode MOSFET 8-SOIC
- Features: MOSFET
- Polarity: P-Channel
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Supplier: Texas Instruments
Description: Dual P-channel Enhancemenent-Mode MOSFET 8-SOIC
- Features: MOSFET
- Polarity: P-Channel
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Supplier: Newark, An Avnet Company
Description: N & P CHANNEL MOSFET, 12V, TSOP; Repetitive Peak Reverse Voltage:600V; Average Forward Current:16A; Diode Configuration:Dual Common Anode; Forward Voltage Max:1.5V; Reverse Recovery Time:50ns; Forward Surge Current:200A RoHS Compliant: Yes
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Supplier: Allied Electronics, Inc.
Description: P-CHANNEL 40-V (D-S), 175C MOSFET
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Supplier: Accuris
Description: Procedure for Measuring P-Channel MOSFET Hot-Carrier-Induced Degradation at Maximum Gate Current under DC Stress
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Supplier: RS Components, Ltd.
Description: P-Channel 60 V (D-S) MOSFET
- Features: MOSFET, Other
- Polarity: P-Channel
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Supplier: Allied Electronics, Inc.
Description: MOSFET, P-CHANNEL, -55V, -31A, 60 MOHM,42 NC QG, TO-262
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Features: MOSFET
- Polarity: P-Channel
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Supplier: Newark, An Avnet Company
Description: Disc Mosfet P Channel-Polar TO-3P (3) / TUBE
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Circuit Protection Components - Disc Mosfet P Channel-Polar Isoplus247 / Tube Littelfuse -- 03AH1797Supplier: Newark, An Avnet Company
Description: Disc Mosfet P Channel-Polar ISOPLUS247 / TUBE
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Supplier: ODG (Origin Data Global)
Description: SMALL SIGNAL P-CHANNEL MOSFET
- V(BR)DSS: 20 volts
- IDSS: 5,300 milliamps
- TJ: -55 to 150 C
- Features: MOSFET, Other
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans MOSFET P-CH 60V 20A
- V(BR)DSS: 60 volts
- IDSS: 20,000 milliamps
- Features: MOSFET
- Polarity: P-Channel
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET 20V P-Channel PowerTrench MOSFET
- Features: MOSFET
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- V(BR)DSS: -100 volts
- IDSS: -11,000 milliamps
- rDS(on): 0.3 ohms
- PD: 63,000 milliwatts
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Supplier: ODG (Origin Data Global)
Description: MOSFET P-CH 200V 48A TO268
- V(BR)DSS: 200 volts
- IDSS: 48,000 milliamps
- PD: 462,000 milliwatts
- TJ: -55 to 150 C
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 20V 8mΩ@12A,4.5V 1V@250uA P Channel WDFN-8 MOSFETs ROHS
- V(BR)DSS: 20 volts
- VGS(off): 1 volts
- rDS(on): 0.008 ohms
- PD: 2,300 milliwatts
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Featured Products Top
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The ALD1107 MOSFET is a high-precision P-channel MOSFET transistor array by Advanced Linear Devices. Its low threshold voltage of -0.7V, low input capacitance, and typical offset voltage of only 2mV make it ideal for analog switching and amplifying (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD1105 by Advanced Linear Devices is engineered for precision and performance. It combines the power of an N-channel MOSFET with a P-channel MOSFET in a single package. The transistor pair is matched for minimum offset voltage and differential thermal (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD310702 from Advanced Linear Devices is a monolithic quad P-channel MOSFET array with unrivaled precision in temperature tracking and simplified bias circuitry. The matched pair circuit is designed for the next generation of products requiring extremely low (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD1103, by Advanced Linear Devices, is a monolithic dual N-channel and P-channel matched transistor pair designed for precision and versatility. The chip combines the power of N-channel and P-channel MOSFET pairs in one package. This dual configuration is (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Product Overview The 2N7002ET1G from ON Semiconductor is a versatile N-Channel MOSFET designed to meet the needs of a wide range of electronic applications, offering high performance and efficiency. Key Features Drain (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
Infineon Technologies BSS138NH6327XTSA2 Overview N-Channel MOSFET: Suitable for various applications requiring efficient power switching. 60V Drain-Source Breakdown Voltage: Capable of handling high voltages (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
amplifiers, energy harvesting systems, analog timers, and conventional and precision EPAD MOSFET transistors. For more information about Advanced Linear Devices go to www.aldinc.com. Learn More See SAB P (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Features: Type: N-Channel MOSFET Logic-Level Gate Drive: Can be switched with (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
The ALD1115 MOSFET by Advanced Linear Devices is a monolithic complementary N-channel and P-channel transistor pair that is designed for a broad range of analog applications. It contains an N-channel and a P-channel MOSFET in one package. These chips are (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
) Package: TO-236-3, SC-59, SOT-23-3 Max Gate-Source Voltage: ±20V Max Input Capacitance: 5305pF @ 13V Features: N-Channel MOSFET, surface mount High-popularity product, balanced supply and demand (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics
Conduct Research Top
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Using Low Resistance MOSFETs as Load Switches
a resistor and therefore Ohms law applies; when turned off, the MOSFET appears as a diode and as such blocks current in one direction with a very high resistance (if reverse protection is required, an additional MOSFET or blocking diode is required). P-channel MOSFETs are normally used
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Application Note: Output Inductor Selection for the AAT115X Series Buck Converter
input. The AAT115X peak current mode control loop senses the current flowing through the high-side P-channel MOSFET and compares it to the output of the voltage loop error amplifier. Sufficient sensed current slope is important for good noise immunity and a wide duty cycle dynamic range. Moreover
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AN211A: Field Effect Transistors in Theory and Practice, Courtesy of Motorla
. The other terminal is called the drain terminal. Current flow between source and drain is related to the drain-source voltage by the resistance of the intervening material. In Figure 1b, p-type regions have been diffused into the n-type substrate of Figure 1a leaving an n-type channel between the source
More Information Top
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Fundamentals of Nanoscaled Field Effect Transistors
6, the use of biaxial strained silicon technology and some case studies for n channel MOSFET and p channel MOSFET modeling have been taken.
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Fundamentals of Bias Temperature Instability in MOS Transistors
1 Introduction: Bias Temperature Instability (BTI) in N and P Channel MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Hot-carrier induced instability of 0.5 μm CMOS devices patterned using synchrotron X-ray lithography
This paper reports the device char- acteristics and hot-carrier induced instability in n- and p channel MOSFETs patterned using synchrotron X-ray .
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Silicon-on-insulator dynamic threshold ESD networks and active clamp circuitry
By connecting the gate of the n-channel MOSFET to the gate reference voltage V m , and the gate of the p channel MOSFET to a gate reference voltage VDD - V p , a new hybrid active clamp/body-coupled dynamic threshold MOSFET ESD …
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Prediction of CMOS transistor performance at 0.10-&mgr;m gate length using tuned simulations
In this paper, the results of a simulation study carried out to predict the performance of N and P channel MOSFETs having a physical gate length of 0.
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Diagnostics of differential parameters in models of field-effect transistors
The results of identification of parameters and simulation errors of a p channel MOSFET were partly presented in [8, 9].
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NTUD3171PZ: Small Signal MOSFET 20V 150mA 5 Ohm Dual P-Channel SOT-963 with ESD
• Dual P Channel MOSFET .
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NTUD3171PZT5G: Small Signal MOSFET 20V 150mA 5 Ohm Dual P-Channel SOT-963 with ESD
• Dual P Channel MOSFET .
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Prediction of 0.18 um CMOS technology performance using tuned device simulation
The results of a simulation study which is carried out to predict the performance of N and P channel MOSFETs with a physical gate length (Lg) of 0.18 pm are reported in this paper.
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Design Consideration in High Temperature Analog CMOS Integrated Circuits
1) where(P~,q,J = (-2.4mV/K,+1.72V)and(+2.4mV/K, - 1.72 V) for typical n’and p channel MOSFET ’s, respec- tively.