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Supplier: Electro Optical Components, Inc.
Description: LED Microsensor NT LLC is focused on developing and manufacturing optoelectronic devices for the mid-infrared spectral range. The company offers a wide range of Light Emitting Diodes (LEDs), LED arrays and spectral matched Photodiodes (PD) that cover the spectral range from 1600 to 5000 nm,
- Sensitivity: 0.7 to 1.6 A/W
- Active Area Diameter or Length: 0.30000000000000004 to 1 mm
- Dark Current: 10,000 to 25,000,000 nA
- Noise Equivalent Power (NEP): 0.0000000000009 to 0.00000000006 W/Hz½
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Supplier: Ophir-Spiricon Inc.
Description: General use for medium aperture pulsed lasers
- Spectral Response Range: 150 to 3,000 nm
- Active Area Diameter or Length: 24 mm
- Active Area Height: 24 mm
- Photodiode Spectral Response: IR, UV, Visible
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Supplier: Electro Optical Components, Inc.
Description: Screened detectors with 0% output above 400 nm Quadrant detector available for beam focus monitoring Gallium Phosphate (GaP) Detectors with output up to 400 nm Diffuser lens option available JIC 119-22 is equivalent to the discontinued Perkin Elmer UV10.T2E.10F and JIC 119-22L
- Sensitivity: 0.13 A/W
- Spectral Response Range: 230 to 530 nm
- Active Area Diameter or Length: 1.1 to 3.6 mm
- Active Area Height: 1.1 to 3.6 mm
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Supplier: Accuris
Description: Nuclear Instrumentation - Photodiodes for Scintillation Detectors - Test Procedures
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now
- Active Area Diameter or Length: 10.000000000000002 mm
- Rise Time: 250 ns
- Operating Temperature: -20 to 80 C
- Photodiode Package: Leaded
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now
- Rise Time: 2,000 ns
- Quantum Efficiency: 100 %
- Operating Temperature: -20 to 80 C
- Photodiode Package: Through Hole Technology (THT)
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Description: Establishes standard test procedures for photodiodes used in scintillation detectors and defines the parameters which shall be provided by the supplier for each type of photodiode.
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Supplier: CSA Group
Description: Establishes standard test procedures for photodiodes used in scintillation detectors and defines the parameters which shall be provided by the supplier for each type of photodiode.
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Supplier: RS Components, Ltd.
Description: Silicon photodiode detector
- Spectral Response Range: 320 to 1,100 nm
- Photodiode Spectral Response: IR, Visible
- Features: Other
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Supplier: Newport MKS
Description: Optics Cage Detector Mount, 818 Series Photodiode Sensors, OpticsCage+
- Features: Other
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Supplier: VAST STOCK CO., LIMITED
Description: Photodiodes Polyled Detector Straight Leads
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Supplier: Marktech Optoelectronics
Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to
- Sensitivity: 35 to 50 A/W
- Spectral Response Range: 400 to 1,100 nm
- Active Area Diameter or Length: 0.04 mm
- Active Area Height: 230 mm
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Supplier: OSI Optoelectronics
Description: FCI-020A and FCI-040A with active area sizes of 0.5mm and 1.0mm, are parts of OSI Optoelectronics' large active area IR sensitive silicon detectors exhibiting excellent responsivity at 970nm. These large active area devices are ideal for use in low speed infrared instrumentation and
- Sensitivity: 0.65 A/W
- Spectral Response Range: 1,100 to 1,650 nm
- Active Area Diameter or Length: 0.00051 mm
- Rise Time: 26 ns
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Supplier: OSI Optoelectronics
Description: Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with
- Sensitivity: 42 A/W
- Spectral Response Range: 350 to 1,100 nm
- Active Area Diameter or Length: 3 mm
- Rise Time: 5 ns
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Supplier: Hamamatsu Photonics Europe
Description: Detector for X-ray monitor Features - Si photodiode coupled to low cost CsI scintillator - Ideal for detection of X-ray energy below 100 keV
- Active Area Diameter or Length: 5.8 mm
- Active Area Height: 5.8 mm
- Dark Current: 0.05 nA
- Photodiode Material: Silicon
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Supplier: ODG (Origin Data Global)
Description: PHOTODIODE DETECTOR FIBER OPTIC
- Sensor Technology: Optical Linear Encoder
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Supplier: MACOM
Description: MACOM offers various PIN photodiodes to support PAM-4 and 400G Ethernet applications with both singlets and arrays. Our proprietary design offers high quantum efficiency and high reliability for industry leading performance.
- Sensitivity: 0.88 A/W
- Spectral Response Range: 1,200 to 1,650 nm
- Photodiode Package: Bare Die
- Photodiode Spectral Response: IR
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Supplier: Hamamatsu Photonics Europe
Description: Wide spectral response range (0.5 to 1.7 μm), Active area: 1 mm dia. The G10899-01K is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899-01K
- Sensitivity: 1 A/W
- Spectral Response Range: 500 to 1,700 nm
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
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Supplier: Electro Optical Components, Inc.
Description: Screened detectors with 0% output above 400 nm Quadrant detector available for beam focus monitoring Gallium Phosphate (GaP) Detectors with output up to 400 nm Diffuser lens option available JIC 119-22 is equivalent to the discontinued Perkin Elmer UV10.T2E.10F and JIC 119-22L
- Spectral Response Range: 210 to 380 nm
- Active Area Diameter or Length: 0.25 to 3.3000000000000003 mm
- Active Area Height: 0.25 to 3.3000000000000003 mm
- Photodiode Package: Leaded, Through Hole Technology (THT)
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Supplier: DigiKey
Description: SILICON PHOTO DETECTOR
- Sensitivity: 0.21 A/W
- Spectral Response Range: 250 to 1,100 nm
- Rise Time: 25 ns
- Operating Temperature: -40 to 100 C
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Supplier: Acme Chip Technology Co., Limited
Description: SENSOR PHOTODIODE DETECTOR ASSY
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Supplier: First Sensor AG
Description: photodiodes, which form wide, fully depleted space-charge regions even at low reverse voltages in order to guarantee the maximum absorption of radiation. For high-energy radiation we offer detectors with a CsI:TI scintillation crystal. Special features Very low dark current signals
- Operating Temperature: 14 to 140 F
- Detector Style: Detector Sensing Element Only
- Types of Radiation Detectors: Semiconductor Diode Detector
- Types of Ionizing Radiation Detected: X-Ray
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Supplier: TE Connectivity
Description: Dimensions Active Area Width : 3.5 MM [.14 INCH ] Total Active Area : 13 MMSQ [.02 INCHSQ ] Operation/Application Optical Sensor Application : Photometry, Fluorescence Detection, Analytical Instruments, Medical Equipment, Spectroscopy Product Type Features Optical Detector Type : Pin
- Operating Temperature: -40 to 413.6 F
- Features: Photoelectric Sensors
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Supplier: First Sensor AG
Description: First Sensor offers large-area InGaAs PIN photodiodes with active sensor surfaces up to 3 mm in diameter. The diodes feature low dark currents and high sensitivity up to 1700 nm wavelength. A model enhanced for the visible wavelength range is also available. Housing options include both
- Spectral Response Range: 900 to 1,700 nm
- Active Area Diameter or Length: 1 mm
- Rise Time: 15 ns
- Dark Current: 1 to 10 nA
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Supplier: California Eastern Laboratories - CEL
Description: The NR8360JP-BC is an InGaAs avalanche photodiode module in a 14-pin DIP package with single mode fiber. A thermoelectric cooler is integrated enabling the temperature control of the APD chip. It is designed for long-reach optical communications and optical test instruments, especially OTDR.
- Sensitivity: 0.89 A/W
- Spectral Response Range: 1,310 to 1,550 nm
- Active Area Diameter or Length: 0.030000000000000002 mm
- Operating Temperature: -20 to 55 C
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Supplier: MOXTEK, Inc.
Description: The XPIN® detector is Moxtek’s best performing Si-PIN detector. XPIN detectors use a silicon PIN diode, multi-layer collimator, and thin DuraBeryllium® window, achieving great resolution and x-ray sensitivity. The XPIN preamp provides a low-noise signal output to an analog or
- Photodiode Type: PIN Photodiode
- Photodiode Material: Silicon
- Photodiode Spectral Response: X-ray
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now
- Active Area Diameter or Length: 1 mm
- Rise Time: 0.7 ns
- Quantum Efficiency: 100 %
- Operating Temperature: -20 to 80 C
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now
- Sensitivity: 0.44 A/W
- Spectral Response Range: 400 to 1,100 nm
- Active Area Diameter or Length: 3.9000000000000004 to 4.4 mm
- Rise Time: 50 ns
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Supplier: DigiKey
Description: Photodiode Sensor Analog Voltage Output
- Operating Temperature: 0 to 70 C
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Supplier: Hamamatsu Photonics Europe
Description: Temperature controller designed for TE-cooled infrared detectors It allows easy but accurate temperature setting for the thermoelectric cooler mounted in an infrared detector. Applicable detectors - One-stage / two-stage TE-cooled type InAsSb photovoltaic detectors -
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Supplier: Meadowlark Optics, Inc.
Description: This turnkey detector is a low noise, high sensitivity system that exceeds the performance of silicon photodiode systems over the wavelength range of 185 to 800 nm. It has a superior combination of a large, eight mm diameter, aperture and fast response of ten microseconds. The
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Supplier: Hamamatsu Photonics Europe
Description: Sensors with a wide spectral response range from UV to IR The K3413-05 is a hybrid detector containing an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. This structure delivers a wide spectral response range from 0.25 μm
- Sensing Range: 0.00167 mm
- Color Types Detected: Near IR, RGB (Visible), UV
- Number Of Colors Detected: Two
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Supplier: Newark, An Avnet Company
Description: OPTICAL SENSOR (PHOTODETECTOR - "P-N") PHOTODIODE; No. of Pins:2Pins; Diode Case Style:Side Looking; Wavelength of Peak Sensitivity:925nm; Angle of Half Sensitivity ±:55°; Dark Current:0.03µA; Operating Temperature Min:-; MSL:- RoHS Compliant: Yes
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detector to push the boundaries of what’s possible in their projects. Discover more about the G1719X series of InGaAs photodiodes now. (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics Europe -
No other detector material (e.g. Si, Ti02, GaN or diamond) offers the unique advantages of IFW's silicon carbide detectors (SiC) in UV-applications: intrinsic spectral response is (read more)
Browse UV Sensors Datasheets for Electro Optical Components, Inc. -
The Mid IR LEDs and Photodiodes key properties are: Low (read more)
Browse Gas Sensors Datasheets for Electro Optical Components, Inc. -
FEMTO's OE-300 photoreceiver series uses premium quality photodiodes followed by a high (read more)
Browse Photosensor Modules Datasheets for Electro Optical Components, Inc. -
also be operated like a conventional photoreceiver simply by shielding one of the photodiodes from incident light with only slightly higher noise level than the Single Channel OE-200 series. (read more)
Browse Photosensor Modules Datasheets for Electro Optical Components, Inc. -
stability, better exchangeability, wider measuring ranges, etc. Their Gamma Sensor Module consists of a cesium iodide crystal, a photodiode, and a high-gain preamplifier that can be used to (read more)
Browse Gas Sensors Datasheets for Electro Optical Components, Inc. -
crystal, a photodiode, and a high-gain preamplifier that can be used to measure X and γ radiation from 50keV to 3MeV. It features high sensitivity and a fast response time (of about a second) to a very minor change of X and γ ( 0.01 μSv/h ). The (read more)
Browse Gas Sensors Datasheets for Electro Optical Components, Inc.
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Stability and Quantum Efficiency Performance of Silicon Photodiode Detectors in the Far Ultraviolet (.pdf)
Recent improvements in silicon photodiode fabrication technology have resulted in the production of photodiodes which are stable after prolonged exposure to short wavelength radiation and which have efficiencies in the far ultraviolet close to those predicted using a value of 3.63 eV
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Lateral Effect Photodiodes (.pdf)
optical designers is the lateral-effect photodiode, which provides direct readout of the displacement of a light spot across its active area; with the air of optics and electronics such a detector can measure angle and distance.
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Amplifying High-Impedence Sensors ? Photodiode Example
amps, is broken down into four design steps: DC, stability compensation, closed-loop gain and noise This design step sets the DC gain and bias point to reduction. ensure proper operation. It also addresses DC offsets. A design using a PIN photodiode (light detector) illus- High-impedance sensors have
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Silicon Photodiodes with Stable, Near-Theoretical Quantum Efficiency in the Soft X-Ray Region (.pdf)
Silicon photodiodes have practically no carrier recombination at the Si-Si02 interface or in the front diffused region have been developed by defect-free n-type impurity diffusion into the p-type silicon. These photodiodes exhibit very high quantum effiencies in the 10 eV to 150 eV photon energy
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Medical Imaging Using Silicon Photomultipliers (SiPMs)
KETEK SiPMs provide excellent performance for these detection tasks and are the superior alternative. compared to the traditionally used light detectors like PMTs (photomultiplier tubes) and APDs. (avalanche photodiodes).
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Using a Digital Potentiometer to Optimize a Precision Single Supply Photo Detect
Photodiodes bridge the gap between light and electronics. Many times precision applications such as CT scanners, blood analyzers, smoke detectors, position sensors, IR pyrometers and chromatographs utilize the basic transimpedance amplifier circuit that transforms light energy into a usable
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http://dspace.mit.edu/bitstream/handle/1721.1/61912/707090925-MIT.pdf?sequence=2
1.4 Role of Optics System and Quadrant Photodiode Detector in AFM Controls . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Photonics and Lasers: An Introduction
Photodiode Detectors .
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Mercury Cadmium Telluride: Growth Properties and Applications Complete Document
… phase epitaxy (LPE) growth Metal-organic vapour phase epitaxy (MOVPE) Molecular beam epitaxy (MBE) Alternative substrates Mechanical, thermal and optical properties of MCT Defects, diffusion, doping and annealing Dry device processing Photoconductive and photovoltaic detectors Avalanche photodiode detectors Room-temperature IR detectors .
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Building Electro-Optical Systems: Making It all Work 2nd Edition Complete Document
14.3.9 Resonance Since inductors and capacitors have reactances of opposite signs, they can be made to cancel each others’ effects, for example, in photodiode detectors where the diode has lots of capacitance.
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The Solar Radiation and Climate Experiment (SORCE)
Also shown in this figure is the measured SIM irradiance in the 208-1604 nm range covered by the SIM photodiode detectors discussed in Section 2.3.1.
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A compact, discrete CsI(Tl) scintillator/Si photodiode gamma camera for breast cancer imaging
4 Prototype CsI(Tl)/Si PIN Photodiode Detectors .
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The CCPR K2.c key comparison of spectral responsivity from 200 nm to 400 nm
Three types of transfer detectors based on two types of pho- todiodes were used as comparison artefacts: (i) single ele- ment photodiode detectors based on windowless SUV100 PtSi/n-Si Schottky photodiodes manufactured by the Swiss Federal Institute of Technology (ETH) in Zurich …
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Progress in Renewable and Sustainable Energy
Silicon photodiode detector is widely used and operated in reversed bias condition.
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The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications
As a benchmark, consider any room-temperature (300 K) background and a 70% (antireflection-coated) QE photodiode detector , sensitive to the 3- to 5-mm spectral band.
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Handbook of Optics: Volume II - Design, Fabrication, and Testing; Sources and Detectors; Radiometry and Photometry, Third Edition > PHOTODETECTORS
Spectral response of a TiO 2 Schottky photodiode detector shown on a linear vertical scale of amperes/watt versus wavelength.