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Supplier: Electro Optical Components, Inc.
Description: LED Microsensor NT LLC is focused on developing and manufacturing optoelectronic devices for the mid-infrared spectral range. The company offers a wide range of Light Emitting Diodes (LEDs), LED arrays and spectral matched Photodiodes (PD) that cover the spectral range from 1600 to 5000 nm
- Active Area Diameter or Length: 0.3000 to 1 mm
- Dark Current: 10000 to 2.50E7 nA
- Noise Equivalent Power (NEP): 9.00E-13 to 6.00E-11 W/Hz½
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
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Supplier: Ophir-Spiricon Inc.
Description: Recommended for measurement of low energies
- Active Area Diameter or Length: 8 mm
- Photodiode Material: Other
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 190 to 12000 nm
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Supplier: Ophir-Spiricon Inc.
Description: Recommended use for high and low repetition rate pulse measurement
- Active Area Diameter or Length: 12 mm
- Photodiode Material: Other
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 150 to 12000 nm
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Supplier: Ophir-Spiricon Inc.
Description: Recommended for measurement of low energies and high repetition rates
- Active Area Diameter or Length: 10 mm
- Photodiode Material: Silicon
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 190 to 1100 nm
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Supplier: Ophir-Spiricon Inc.
Description: General use for medium aperture pulsed lasers
- Active Area Diameter or Length: 24 mm
- Active Area Height: 24 mm
- Photodiode Material: Other
- Spectral Response: UV, Visible, IR
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Supplier: VAST STOCK CO., LIMITED
Description: Photodiodes Polyled Detector Gullwing
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Supplier: VAST STOCK CO., LIMITED
Description: Photodiodes Polyled Detector Z-bend
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Supplier: VAST STOCK CO., LIMITED
Description: Photodiodes Polyled Detector Yoke Bend
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Supplier: VAST STOCK CO., LIMITED
Description: Photodiodes Polyled Detector Straight Leads
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Supplier: Electro Optical Components, Inc.
Description: Silicon carbide SiC photodetectors / photodiodes have a spectral response of approximately 210 – 380 nm and are not sensitive to UV radiation outside this region. This makes them ideal detectors in certain applications for monitoring the UV spectrum without the need for solar rejection
- Active Area Diameter or Length: 1.1 to 3.6 mm
- Active Area Height: 1.1 to 3.6 mm
- Photodiode Material: Other
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
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Supplier: OSI Optoelectronics
Description: FCI-020A and FCI-040A with active area sizes of 0.5mm and 1.0mm, are parts of OSI Optoelectronics' large active area IR sensitive silicon detectors exhibiting excellent responsivity at 970nm. These large active area devices are ideal for use in low speed infrared instrumentation and
- Active Area Diameter or Length: 5.10E-4 mm
- Dark Current: 0.1500 nA
- Noise Equivalent Power (NEP): 2.80E-15 W/Hz½
- Operating Temperature: -40 to 75 C
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics' family of large active area and high speed silicon detector series are designed to reliably support short-haul data communications applications. All exhibit low dark current and low capacitance at 3.3V bias. The base unit comes in a 3 pin TO-46 package with micro lens cap
- Active Area Diameter or Length: 0.1270 mm
- Dark Current: 0.0200 nA
- Noise Equivalent Power (NEP): 5.95E-15 W/Hz½
- Operating Temperature: -40 to 75 C
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Supplier: MACOM
Description: MACOM offers various PIN photodiodes to support PAM-4 and 400G Ethernet applications with both singlets and arrays. Our proprietary design offers high quantum efficiency and high reliability for industry leading performance.
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Package / Mounting: Bare Die
- Sensitivity: 0.8800 A/W
- Spectral Response: IR
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now
- Active Area Diameter or Length: 10 mm
- Operating Temperature: -20 to 80 C
- Photodiode Package / Mounting: Leaded
- Rise Time: 250 ns
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now
- Operating Temperature: -20 to 80 C
- Photodiode Package / Mounting: Through Hole Technology (THT)
- Quantum Efficiency: 100 %
- Rise Time: 2000 ns
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Supplier: Marktech Optoelectronics
Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to
- Active Area Diameter or Length: 0.0400 mm
- Active Area Height: 230 mm
- Dark Current: 0.0500 nA
- Operating Temperature: -20 to 85 C
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Supplier: OSI Optoelectronics
Description: Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with
- Active Area Diameter or Length: 3 mm
- Dark Current: 15 nA
- Operating Temperature: -40 to 70 C
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: OSI Optoelectronics
Description: Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with
- Active Area Diameter or Length: 0.3000 mm
- Dark Current: 1 nA
- Operating Temperature: -40 to 70 C
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: Hamamatsu Photonics
Description: Detector for X-ray monitor Features - Si photodiode coupled to low cost CsI scintillator - Ideal for detection of X-ray energy below 100 keV
- Active Area Diameter or Length: 5.8 mm
- Active Area Height: 5.8 mm
- Dark Current: 0.0500 nA
- Photodiode Material: Silicon
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Supplier: Electro Optical Components, Inc.
Description: Silicon carbide SiC photodetectors / photodiodes have a spectral response of approximately 210 – 380 nm and are not sensitive to UV radiation outside this region. This makes them ideal detectors in certain applications for monitoring the UV spectrum without the need for solar rejection
- Active Area Diameter or Length: 0.2500 to 3.3 mm
- Active Area Height: 0.2500 to 3.3 mm
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
- Spectral Response: UV
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Supplier: Hamamatsu Photonics
Description: Detector for X-ray monitors Features - High sensitivity, high reliability photodiode with ceramic scintillator - High X-ray sensitivity: 1.8 times that of CWO - Less afterglow than CsI: <0.1 %/3 ms, <0.01 %/30 ms - Unlike CsI, has no deliquescence
- Active Area Diameter or Length: 5.8 mm
- Active Area Height: 5.8 mm
- Dark Current: 0.0500 nA
- Photodiode Material: Silicon
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Supplier: First Sensor AG
Description: photodiodes, which form wide, fully depleted space-charge regions even at low reverse voltages in order to guarantee the maximum absorption of radiation. For high-energy radiation we offer detectors with a CsI:TI scintillation crystal. Special features Very low dark current signals
- Active Area Diameter or Length: 10 mm
- Dark Current: 1.5 to 2.5 nA
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
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Supplier: Hamamatsu Photonics
Description: Wide spectral response range (0.5 to 1.7 µm), Active area: 1 mm dia. The G10899-01K is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 µm to 1.7 µm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 µm to 1
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Dark Current: 5 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics
Description: Wide spectral response range (0.5 to 1.7 µm), Active area: 2 mm dia. The G10899-02K is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 µm to 1.7 µm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 µm to 1
- Active Area Diameter or Length: 2 mm
- Active Area Height: 2 mm
- Dark Current: 25 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: First Sensor AG
Description: First Sensor offers large-area InGaAs PIN photodiodes with active sensor surfaces up to 3 mm in diameter. The diodes feature low dark currents and high sensitivity up to 1700 nm wavelength. A model enhanced for the visible wavelength range is also available. Housing options include both
- Active Area Diameter or Length: 1 mm
- Dark Current: 1 to 10 nA
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Indium Gallium Arsenide
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Supplier: MOXTEK, Inc.
Description: The XPIN® detector is Moxtek’s best performing Si-PIN detector. XPIN detectors use a silicon PIN diode, multi-layer collimator, and thin DuraBeryllium® window, achieving great resolution and x-ray sensitivity. The XPIN preamp provides a low-noise signal output to an analog or
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
- Spectral Response: X-ray
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Supplier: MOXTEK, Inc.
Description: The XPIN® detector is Moxtek’s best performing Si-PIN detector. XPIN detectors use a silicon PIN diode, multi-layer collimator, and thin DuraBeryllium® window, achieving great resolution and x-ray sensitivity. The XPIN preamp provides a low-noise signal output to an analog or
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
- Spectral Response: X-ray
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now
- Active Area Diameter or Length: 10 mm
- Operating Temperature: -20 to 80 C
- Photodiode Package / Mounting: Leaded
- Rise Time: 250 ns
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Supplier: DigiKey
Description: SILICON PHOTO DETECTOR
- Dark Current: 0.5000 nA
- Operating Temperature: -40 to 100 C
- Photodiode Package / Mounting: Through Hole Technology (THT), Other
- Rise Time: 25 ns
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Supplier: ODG (Origin Data Global)
Description: PHOTODIODE DETECTOR FIBER OPTIC
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Supplier: Accuris
Description: Nuclear Instrumentation - Photodiodes for Scintillation Detectors - Test Procedures
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Supplier: California Eastern Laboratories - CEL
Description: InGaAs APD In Coaxial Package For Fiber Optic Communication And OTDR Applications
- Active Area Diameter or Length: 0.0800 mm
- Dark Current: 7 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: Acme Chip Technology Co., Limited
Description: SENSOR PHOTODIODE DETECTOR ASSY
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Supplier: TE Connectivity
Description: Product Type Features Optical Detector Type : Pin Photodiode Optical Sensor Product Type : Detector Signal Characteristics Operating Wavelength (NANOM) : 500 - 900 Usage Conditions Operating Temperature Range : -40 - 85 DEGC [-104 - 185 DEGF ]
- Operating Temperature: -40 to 185 F
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Supplier: TE Connectivity
Description: Sensor Application : Optical Tweezers, Laser Beam Position Sensor, Autocollimators, Pulsed Light Detection, Ellipsometer Product Type Features Optical Detector Type : Quadrant Pin Photodiode Optical Sensor Product Type
- Operating Temperature: -40 to 414 F
- Technology: Photoelectric Sensors
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detector to push the boundaries of what’s possible in their projects. Discover more about the G1719X series of InGaAs photodiodes now. (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics -
No other detector material (e.g. Si, Ti02, GaN or diamond) offers the unique advantages of IFW's silicon carbide detectors (SiC) in UV-applications: intrinsic spectral response is (read more)
Browse UV Sensors Datasheets for Electro Optical Components, Inc. -
The Mid IR LEDs and Photodiodes key properties are: Low (read more)
Browse Gas Sensors Datasheets for Electro Optical Components, Inc. -
FEMTO's OE-300 photoreceiver series uses premium quality photodiodes followed by a high (read more)
Browse Photosensor Modules Datasheets for Electro Optical Components, Inc. -
stability, better exchangeability, wider measuring ranges, etc. Their Gamma Sensor Module consists of a cesium iodide crystal, a photodiode, and a high-gain preamplifier that can be used to (read more)
Browse Gas Sensors Datasheets for Electro Optical Components, Inc. -
crystal, a photodiode, and a high-gain preamplifier that can be used to measure X and γ radiation from 50keV to 3MeV. It features high sensitivity and a fast response time (of about a second) to a very minor change of X and γ ( 0.01 μSv/h ). The (read more)
Browse Gas Sensors Datasheets for Electro Optical Components, Inc.
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Stability and Quantum Efficiency Performance of Silicon Photodiode Detectors in the Far Ultraviolet (.pdf)
Recent improvements in silicon photodiode fabrication technology have resulted in the production of photodiodes which are stable after prolonged exposure to short wavelength radiation and which have efficiencies in the far ultraviolet close to those predicted using a value of 3.63 eV
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Lateral Effect Photodiodes (.pdf)
optical designers is the lateral-effect photodiode, which provides direct readout of the displacement of a light spot across its active area; with the air of optics and electronics such a detector can measure angle and distance.
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Amplifying High-Impedence Sensors ? Photodiode Example
amps, is broken down into four design steps: DC, stability compensation, closed-loop gain and noise This design step sets the DC gain and bias point to reduction. ensure proper operation. It also addresses DC offsets. A design using a PIN photodiode (light detector) illus- High-impedance sensors have
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Silicon Photodiodes with Stable, Near-Theoretical Quantum Efficiency in the Soft X-Ray Region (.pdf)
Silicon photodiodes have practically no carrier recombination at the Si-Si02 interface or in the front diffused region have been developed by defect-free n-type impurity diffusion into the p-type silicon. These photodiodes exhibit very high quantum effiencies in the 10 eV to 150 eV photon energy
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Medical Imaging Using Silicon Photomultipliers (SiPMs)
KETEK SiPMs provide excellent performance for these detection tasks and are the superior alternative. compared to the traditionally used light detectors like PMTs (photomultiplier tubes) and APDs. (avalanche photodiodes).
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Using a Digital Potentiometer to Optimize a Precision Single Supply Photo Detect
Photodiodes bridge the gap between light and electronics. Many times precision applications such as CT scanners, blood analyzers, smoke detectors, position sensors, IR pyrometers and chromatographs utilize the basic transimpedance amplifier circuit that transforms light energy into a usable
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http://dspace.mit.edu/bitstream/handle/1721.1/61912/707090925-MIT.pdf?sequence=2
1.4 Role of Optics System and Quadrant Photodiode Detector in AFM Controls . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Photonics and Lasers: An Introduction
Photodiode Detectors .
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Mercury Cadmium Telluride: Growth Properties and Applications Complete Document
… phase epitaxy (LPE) growth Metal-organic vapour phase epitaxy (MOVPE) Molecular beam epitaxy (MBE) Alternative substrates Mechanical, thermal and optical properties of MCT Defects, diffusion, doping and annealing Dry device processing Photoconductive and photovoltaic detectors Avalanche photodiode detectors Room-temperature IR detectors .
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Building Electro-Optical Systems: Making It all Work 2nd Edition Complete Document
14.3.9 Resonance Since inductors and capacitors have reactances of opposite signs, they can be made to cancel each others’ effects, for example, in photodiode detectors where the diode has lots of capacitance.
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The Solar Radiation and Climate Experiment (SORCE)
Also shown in this figure is the measured SIM irradiance in the 208-1604 nm range covered by the SIM photodiode detectors discussed in Section 2.3.1.
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A compact, discrete CsI(Tl) scintillator/Si photodiode gamma camera for breast cancer imaging
4 Prototype CsI(Tl)/Si PIN Photodiode Detectors .
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The CCPR K2.c key comparison of spectral responsivity from 200 nm to 400 nm
Three types of transfer detectors based on two types of pho- todiodes were used as comparison artefacts: (i) single ele- ment photodiode detectors based on windowless SUV100 PtSi/n-Si Schottky photodiodes manufactured by the Swiss Federal Institute of Technology (ETH) in Zurich …
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Progress in Renewable and Sustainable Energy
Silicon photodiode detector is widely used and operated in reversed bias condition.
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The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications
As a benchmark, consider any room-temperature (300 K) background and a 70% (antireflection-coated) QE photodiode detector , sensitive to the 3- to 5-mm spectral band.
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Handbook of Optics: Volume II - Design, Fabrication, and Testing; Sources and Detectors; Radiometry and Photometry, Third Edition > PHOTODETECTORS
Spectral response of a TiO 2 Schottky photodiode detector shown on a linear vertical scale of amperes/watt versus wavelength.