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Supplier: MACOM
Description: At MACOM we offer a broad range of TMOS and DMOS RF power MOSFET transistor products as discrete devices from DC to 1.0 GHz. Our high power MOSFET transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical
- Operating Frequency: 5 to 1000 MHz
- Output Power: 2 to 600 watts
- Package Type: Other
- Power Gain: 8 to 21 dB
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Description: -speed rail, new energy vehicles, etc., and are a crucial core heat dissipation material for silicon carbide power modules (SiC MOSFET) and insulated gate bipolar transistors (IGBT).
- Applications: Corrosion Protection, Electrical / HV Parts, Electronics / RF-Microwave
- Density: 3.2 to 3.3 g/cc
- Shape / Form: Plate / Board (e.g., Fiberboard)
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Infineon Technologies AG
Description: EasyPACK™ 1B CoolSiC™ MOSFET fourpack module 1200 V, 17 mO G1 with NTC, pre-applied thermal interface material (TIM) and PressFIT contact technology. Summary of Features Best-in-class packages with 12 mm height Leading edge WBG material
- Package Type: Other
- Transistor Grade / Operating Range: Industrial, Other
- Transistor Type: MOSFET
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Supplier: Infineon Technologies AG
Description: -100V Single P-Channel Power MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load
- Package Type: TO-220, Other
- Packing Method: Shipping Tube / Stick Magazine, Other
- Polarity: P-Channel, Other
- TJ: 175 C
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Supplier: Infineon Technologies AG
Description: 20V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The
- Package Type: Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
- TJ: 150 C
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Supplier: Infineon Technologies AG
Description: DC-DC eMobility Motor control Notebook Onboard charger Designers who used this product also designed with BGS12P2L6 | RF Switches IRF7832PBF-1 | N-Channel Power MOSFET CY2304NZZXC-1T
- Package Type: SO-8, Other
- Packing Method: Tape Reel, Other
- Polarity: P-Channel, Other
- TJ: 150 C
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Description: SILICON CARBIDE POWER MOSFET 120
- Packing Method: Tape Reel, Other
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Description: SILICON CARBIDE POWER MOSFET 650
- Package Type: Other
- Packing Method: Tape Reel, Other
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Description: SILICON CARBIDE POWER MOSFET 650
- Package Type: TO-247, Other
- Packing Method: Shipping Tube / Stick Magazine, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Microsemi Corporation Win Source Part Number: 1096898-APTSM120AM55 CT1AG Packaging: Bulk Mounting: Chassis Mount FET Type: 2 N-Channel (Dual), Schottky FET Feature: Silicon Carbide (SiC) Categories: Discrete Semiconductor Products Status: Active
- PD: 470000 milliwatts
- Package Type: SOT3, Other
- Packing Method: Bulk Pack, Other
- Polarity: N-Channel
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Supplier: MACOM
Description: At MACOM we offer a broad range of pulsed and linear RF power transistor products--discrete devices, modules, and pallets designed to operate from DC to 6 GHz. Our high power transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific,
- Operating Frequency: 0.0 to 4000 MHz
- Output Power: 18 to 45 watts
- Package Type: Other
- Power Gain: 11 to 14 dB
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Supplier: Rochester Electronics
Description: MX0912B351Y - NPN Silicon RF Power Transistor
- Package Type: Other
- Packing Method: Bulk Pack, Other
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Supplier: Rochester Electronics
Description: MX0912B100Y - NPN Silicon RF Power Transistor
- Package Type: Other
- Packing Method: Bulk Pack, Other
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Supplier: Rochester Electronics
Description: MZ0912B50 - NPN Silicon RF Power Transistor
- Package Type: Other
- Packing Method: Other
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 1030763-SCT2450KEC Packaging: Tube/Rail Mounting: Through Hole Technology: SiCFET (Silicon Carbide) Polarity: N-Channel Power Dissipation (Max): 85W (Tc) Categories: Discrete Semiconductor Products Drive
- PD: 85000 milliwatts
- Package Type: TO-247, SOT3, Other
- Packing Method: Rail, Shipping Tube / Stick Magazine, Other
- Polarity: N-Channel, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Cree/Wolfspeed Win Source Part Number: 1027138-C2M0160120D Packaging: Tube/Rail Mounting: Through Hole Technology: SiCFET (Silicon Carbide) Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Family Name: C2M0160120D Categories: Discrete
- PD: 125000 milliwatts
- Package Type: TO-247, SOT3, Other
- Packing Method: Rail, Shipping Tube / Stick Magazine, Other
- Polarity: N-Channel, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 794000-SCH2080KEC Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 175°C (TJ) Package: TO-247-3 Technology: SiCFET (Silicon Carbide) Current - Continuous Drain (Id) @ 25°C: 40A
- PD: 262000 milliwatts
- Package Type: TO-247, SOT3
- Packing Method: Shipping Tube / Stick Magazine, Other
- TJ: 175 C
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Supplier: Rochester Electronics
Description: RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Package Type: Other
- Packing Method: Other
- Polarity: N-Channel
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Description: topics related to RF power amplifier design under one concise cover. With a focus on efficiency enhancement techniques and the latest advances in the field, coverage includes: Device modeling for CAD Empirical modeling of bipolar devices Scalable modeling of RF MOSFETs
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Supplier: Integra Technologies, Inc.
Description: The high power silicon transistor part number IDM175CW300 is designed for VHF-Band systems operating at 1-200 . Operating at CW conditions, this dual MOSFET device supplies a minimum of 300 watts of power across the instantaneous operating bandwidth of 1-200 . All devices
- Package Type: Other
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Description: (si)Applications Semiconductor manufacturing Microwave power amplifier RF power and switch High temperature power electronics Laser diode dispersion optoelectronic devices High power and high frequency electronic devices MOSFET, IGBT power modules Led
- Applications: Other
- Material Type: Aluminum Nitride, Specialty Ceramic
- Performance Features: Specialty / Other
- Shape / Form: Wafer / Substrate
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Featured Products Top
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Wolfspeed offers a family of 1200 V silicon carbide MOSFETs and Schottky diodes that are optimized for use in high power applications such as UPS, motor control and drives, switched-mode power supplies, solar and energy storage systems, electric vehicle charging, high (read more)
Browse Diodes Datasheets for DigiKey -
Lowest conduction and switching losses in the industry, enabling smaller, lighter and highly efficient power conversion Wolfspeed’s 3rd Generation 650V MOSFET technology from Richardson RFPD is optimized for high performance power electronics applications (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
1212 stands for copper clip, meaning that the power MOSFET silicon die is sandwiched between two pieces of copper, the drain tab on one side and the source clip on the other. With wire bonds entirely eliminated, such an optimized assembly offers a low on-resistance, reduced parasitic inductances (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Wolfspeed offers a new family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as solar and energy storage systems, EV charging, Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, high (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
Microchip's SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules from Richardson RFPD feature phase leg topology ranking from 700 volts (V), 538A to 1200 volts (V), 394 amperes (A) to 754 A at a case temperature (Tc) of 80 degrees Celsius. Offering higher power density and a (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
its Si82Ex/Fx value and performance isolated gate drivers for silicon MOSFET, IGBT, SiC and GaN devices. Skyworks Solutions, Inc. provides an upgrade path for its Si823x (read more)
Browse LED Drivers Datasheets for Skyworks Solutions, Inc. -
Automotive and e-mobility Renewable energy Industrial applications INNOVA Supplies silicon nitride (Si3N4) high-performance ceramic substrates offer the best blend of value and performance in demanding, high-power applications. We also supply various Silicon Nitride(Si3N4) high-performance ceramic components. Please contact us for bulk orders or customization. (read more)
Browse Silicon Nitride and Silicon Nitride Ceramics Datasheets for Xiamen Innovacera Advanced Materials Co., Ltd. -
XM Series is RF Switch based on SOI "Silicon On Insurator" and GaAs "gallium arsenide" process. It is suitable product for Radio Frequency applications such as Cellular or ISM band widely. Switch control Interface supports GPIO and MIPI with various configurations: High Power, High Isolation, excellent linearity and Insertion Loss. (read more)
Browse RF Switches Datasheets for Murata Electronics -
high power density, Nexperia’s CCPAK1212 MOSFETs reduce the need for parallel-connected devices, as well as saving up to 40% PCB space compared to traditional TOLL- or TOLT-packaged alternatives due to their compact size. The next-generation 100 V AEC-Q101 trench silicon platform (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Nexperia announced the release of 1200 V silicon carbide (SiC) MOSFETs in QDPAK packaging, extending its growing wide-bandgap (WBG) portfolio with a top-side cooled surface-mount package optimized for high-power density and thermally demanding applications. Designed for high-efficiency, high (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V.
Conduct Research Top
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Silicon RF Power MOSFETS
Silicon RF Power MOSFETS. Providing general guidelines for understanding the design and operation of the transistors, this book describes the physics, design considerations and RF performance of silicon power MOSFETs.
More Information Top
Indicates content that may require registration and/or purchase.
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2007 Index IEEE Transactions on Microwave Theory and Techniques Vol. 55
… J., T-MTT Jun. 2007 1272-1279 Filipovic, D. S., see Saito, Y., T-MTT Dec. 2007 2521-2530 Fioravanti, P., Spulber, O., and De Souza, M. M., Analytic Large-Signal Mod- eling of Silicon RF Power MOSFETs ; T-MTT May 2007 …
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Page 64. Semiconductor parts with 510 in root number
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS .
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Advanced Power MOSFET Concepts
B.J. Baliga, “ Silicon RF Power MOSFETs ”, World Scientific Publishing Company, Singapore, 2005.
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Fundamentals of Power Semiconductor Devices
The design of silicon RF power MOSFET structures capable of exhibiting this new mode of operation is described elsewhere.13 The superlinear mode of operation is based upon maintaining the MOS channel of the MOSFET in the linear regime of operation while …
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Page 6. Semiconductor parts with 027 in root number
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS .
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Page 48. Semiconductor parts with 102 in root number
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS .
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New analytical expressions for the design of linear power amplifier using GaN HEMTs
A reliable analytical approach proposed in [1] serves the purpose for Silicon RF power MOSFETs .
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A Novel Silicon High Voltage Vertical MOSFET Technology for a 100W L-Band Radar Application
The HVVFET™ (High Voltage Vertical Field Effect Transistor) is an advanced vertical MOSFET structure that expands the operating frequencies of vertical silicon RF power MOSFETs well into the microwave spectrum.
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More Electromagnetics? [review of "Electromagnetics for High-Speed Analog and Digital Communications Circuits" (Niknejad, A.M.; 2007)]
B. Jayant Baliga, Silicon RF Power MOSFETs (World Scientific, Singapore, 2005), 320 pp. [ISBN: 981-256-121-8].
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RF power LDMOSFET on SOI
The device performance compares favorably with bulk silicon rf power MOSFETs .