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Supplier: MACOM
Description: At MACOM we offer a broad range of TMOS and DMOS RF power MOSFET transistor products as discrete devices from DC to 1.0 GHz. Our high power MOSFET transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical
- Output Power: 2 to 600 watts
- Power Gain: 8 to 21 dB
- Operating Frequency: 5 to 1,000 MHz
- Transistor Grade / Operating Range: Commercial, Industrial
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Supplier: Wolfspeed
Description: Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase
- Features: MOSFET, Other
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Supplier: Wolfspeed
Description: Cree introduces its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial
- Features: MOSFET, Other
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Supplier: Wolfspeed
Description: Cree introduces its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial
- Features: MOSFET, Other
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Supplier: Wolfspeed
Description: Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. MOSFET is designed to support new 1500V bus applications in topologies such a boost converters and Aux power supplies. Optimized for high-frequency
- Features: MOSFET, Other
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Supplier: Infineon Technologies AG
Description: MOSFET IRFB4115 | N-Channel Power MOSFET BSC123N08NS3 G | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET IRFS4115 | N-Channel Power MOSFET IRFP4310Z | N-Channel Power MOSFET IRFR5410 | P-Channel Power
- TJ: 150 C
- VGS(off): -1 to 0.45 volts
- Features: MOSFET, Other, Power MOSFET
- Polarity: P-Channel
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Supplier: Infineon Technologies AG
Description: 20V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive
- rDS(on): 0.00095 ohms
- TJ: 150 C
- VGS(off): 0.5 to 1.1 volts
- Features: MOSFET, Other, Power MOSFET
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Supplier: Infineon Technologies AG
Description: IRF7832PBF-1 | N-Channel Power MOSFET CY2304NZZXC-1T | CYPRESS™ Buffers BGS12P2L6 | RF Switches IRF7832PBF-1 | N-Channel Power MOSFET CY2304NZZXC-1T | CYPRESS™ Buffers
- rDS(on): 0.0119 ohms
- TJ: 150 C
- VGS(off): -2.4 to -1.3 volts
- Features: MOSFET, Other, Power MOSFET
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Supplier: Richardson RFPD
Description: Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss ""Miller"" capacitance. The
- rDS(on): 0.2 ohms
- Features: MOSFET, Other, Power MOSFET
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Supplier: Richardson RFPD
Description: Silicon Carbide Power MOSFET C3MTM MOSFET Technology Wolfspeed continues its leadership in SiC technology by offering MOSFETs in a wide variety of on-resistances and package options, enabling designers to select the right part for their applications. The efficiency
- rDS(on): 0.16 ohms
- Features: MOSFET, Other
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power
- Features: MOSFET
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Supplier: Infineon Technologies AG
Description: CoolMOS™ N-Channel Power MOSFET TLE9471-3ES V33 | OPTIREG™ Lite SBC BSC016N06NS | N-Channel Power MOSFET IPD50P04P4L-11 | Automotive MOSFET 2EDF7275F | Gate driver ICs BSS308PE | Small signal/small power MOSFET BSC014N06NS | N-Channel Power
- rDS(on): 45 ohms
- TJ: 150 C
- VGS(off): 1.3 to 2.3 volts
- Operating Mode: Enhancement
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Supplier: Newark, An Avnet Company
Description: HALF BRIDGE MOSFET MODULE, 1200V, 100A, SILICON CARBIDE; MOSFET Module Configuration:Half Bridge; Continuous Drain Current Id:100A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Power Dissipation:568W RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs,
- Features: MOSFET
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Description: high-speed rail, new energy vehicles, etc., and are a crucial core heat dissipation material for silicon carbide power modules (SiC MOSFET) and insulated gate bipolar transistors (IGBT).
- Density: 3.1999979803934133 to 3.2999979172807077 g/cc
- Applications: Corrosion Protection, Electrical / HV Parts, Electronics / RF-Microwave
- Performance Features: Hard
- Shape / Form: Plate / Board (e.g., Fiberboard)
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Supplier: ROHM Semiconductor GmbH
Description: BSM180C12P2E202 is a SiC (silicon carbide) power module with low surge and low switching loss, suitable for converter, photovoltaics, wind power generation, heating equipment.
- V(BR)DSS: 1,200 volts
- IDSS: 204,000 milliamps
- PD: 1,360,000 milliwatts
- TJ: -40 to 125 C
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Supplier: ROHM Semiconductor GmbH
Description: BSM300D12P2E001 is a half bridge module consisting of Silicon Carbide DMOSFET and Silicon Carbide Schottky Barrier Diode.
- V(BR)DSS: 1,200 volts
- IDSS: 300,000 milliamps
- PD: 1,875,000 milliwatts
- TJ: -40 to 125 C
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Supplier: RS Components, Ltd.
Description: Silicon carbide Power MOSFET 1200 V, 21
- Features: MOSFET, Other
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Category: Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs Package: Tube Product Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Power Dissipation (Max): 388W (Tc) Operating
- PD: 388,000 milliwatts
- Features: MOSFET, Power MOSFET
- Polarity: N-Channel
- Package Type: SOT3, TO-247
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Supplier: ROHM Semiconductor GmbH
Description: BSM080D12P2C008 is a half bridge module consisting of SiC-DMOS and SiC SBD.
- V(BR)DSS: 1,200 volts
- IDSS: 80,000 milliamps
- PD: 600,000 milliwatts
- TJ: -40 to 125 C
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Supplier: ODG (Origin Data Global)
Description: SILICON CARBIDE POWER MOSFET 650
- V(BR)DSS: 650 volts
- IDSS: 119,000 milliamps
- PD: 565,000 milliwatts
- TJ: -55 to 200 C
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Supplier: Utmel Electronic Limited
Description: Power Field-Effect Transistor, 2.5A I(D), 30V, 0.36ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
- Polarity: P-Channel
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
- Features: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products- Transistors- FETs, MOSFETs- Single FETs, MOSFETs Series: CoolSIC™ M1 Package: Tube Product Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 150°C
- Features: MOSFET
- Polarity: N-Channel
- Package Type: SOT3
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Description: SILICON CARBIDE POWER MOSFET 650
- V(BR)DSS: 650 volts
- IDSS: 119,000 milliamps
- Features: MOSFET, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: MACOM
Description: At MACOM we offer a broad range of pulsed and linear RF power transistor products--discrete devices, modules, and pallets designed to operate from DC to 6 GHz. Our high power transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific,
- Power Gain: 11 to 14 dB
- Output Power: 18 to 45 watts
- Operating Frequency: 0 to 4,000 MHz
- Transistor Grade / Operating Range: Commercial, Industrial
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs Series: CoolSiC™ Package: Tube Product Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V
- Features: MOSFET
- Polarity: N-Channel
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products Transistors -FETs, MOSFETs -Single FETs, MOSFETs Series: CoolSiC™ Package: Tube Product Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V
- Features: MOSFET
- Polarity: N-Channel
- Package Type: SOT3
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Description: related to RF power amplifier design under one concise cover. With a focus on efficiency enhancement techniques and the latest advances in the field, coverage includes: Device modeling for CAD Empirical modeling of bipolar devices Scalable modeling of RF MOSFETs
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Silicon N/P Channel Power MOS FET High Speed Power Switching Product overview: HAT3008R from Hitachi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for
- Features: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Silicon N Channel Power MOS FET High Speed Power Switching Product overview: HAT2028R from Hitachi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for
- Features: MOSFET
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Supplier: Littelfuse, Inc.
Description: The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage
- Polarity: N-Channel
- Features: Other
- Package Type: TO-247
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Supplier: DigiKey
Description: SILICON CARBIDE POWER MOSFET 120
- Polarity: N-Channel
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Supplier: Utmel Electronic Limited
Description: Power Field-Effect Transistor, 6A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
- Polarity: N-Channel
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Supplier: Allied Electronics, Inc.
Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs
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Featured Products Top
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Wolfspeed offers a family of 1200 V silicon carbide MOSFETs and Schottky diodes that are optimized for use in high power applications such as UPS, motor control and drives, switched-mode power supplies, solar and energy storage systems, electric vehicle charging, high (read more)
Browse Diodes Datasheets for DigiKey -
Lowest conduction and switching losses in the industry, enabling smaller, lighter and highly efficient power conversion Wolfspeed’s 3rd Generation 650V MOSFET technology from Richardson RFPD is optimized for high performance power electronics applications (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
1212 stands for copper clip, meaning that the power MOSFET silicon die is sandwiched between two pieces of copper, the drain tab on one side and the source clip on the other. With wire bonds entirely eliminated, such an optimized assembly offers a low on-resistance, reduced parasitic inductances (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Wolfspeed offers a new family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as solar and energy storage systems, EV charging, Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, high (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
Microchip's SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules from Richardson RFPD feature phase leg topology ranking from 700 volts (V), 538A to 1200 volts (V), 394 amperes (A) to 754 A at a case temperature (Tc) of 80 degrees Celsius. Offering higher power density and a (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
its Si82Ex/Fx value and performance isolated gate drivers for silicon MOSFET, IGBT, SiC and GaN devices. Skyworks Solutions, Inc. provides an upgrade path for its Si823x (read more)
Browse LED Drivers Datasheets for Skyworks Solutions, Inc. -
Automotive and e-mobility Renewable energy Industrial applications INNOVA Supplies silicon nitride (Si3N4) high-performance ceramic substrates offer the best blend of value and performance in demanding, high-power applications. We also supply various Silicon Nitride(Si3N4) high-performance ceramic components. Please contact us for bulk orders or customization. (read more)
Browse Silicon Nitride and Silicon Nitride Ceramics Datasheets for Xiamen Innovacera Advanced Materials Co., Ltd. -
XM Series is RF Switch based on SOI "Silicon On Insurator" and GaAs "gallium arsenide" process. It is suitable product for Radio Frequency applications such as Cellular or ISM band widely. Switch control Interface supports GPIO and MIPI with various configurations: High Power, High Isolation, excellent linearity and Insertion Loss. (read more)
Browse RF Switches Datasheets for Murata Electronics -
high power density, Nexperia’s CCPAK1212 MOSFETs reduce the need for parallel-connected devices, as well as saving up to 40% PCB space compared to traditional TOLL- or TOLT-packaged alternatives due to their compact size. The next-generation 100 V AEC-Q101 trench silicon platform (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Nexperia announced the release of 1200 V silicon carbide (SiC) MOSFETs in QDPAK packaging, extending its growing wide-bandgap (WBG) portfolio with a top-side cooled surface-mount package optimized for high-power density and thermally demanding applications. Designed for high-efficiency, high (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V.
Conduct Research Top
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Silicon RF Power MOSFETS
Silicon RF Power MOSFETS. Providing general guidelines for understanding the design and operation of the transistors, this book describes the physics, design considerations and RF performance of silicon power MOSFETs.
More Information Top
Indicates content that may require registration and/or purchase.
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2007 Index IEEE Transactions on Microwave Theory and Techniques Vol. 55
… J., T-MTT Jun. 2007 1272-1279 Filipovic, D. S., see Saito, Y., T-MTT Dec. 2007 2521-2530 Fioravanti, P., Spulber, O., and De Souza, M. M., Analytic Large-Signal Mod- eling of Silicon RF Power MOSFETs ; T-MTT May 2007 …
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Page 64. Semiconductor parts with 510 in root number
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS .
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Advanced Power MOSFET Concepts
B.J. Baliga, “ Silicon RF Power MOSFETs ”, World Scientific Publishing Company, Singapore, 2005.
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Fundamentals of Power Semiconductor Devices
The design of silicon RF power MOSFET structures capable of exhibiting this new mode of operation is described elsewhere.13 The superlinear mode of operation is based upon maintaining the MOS channel of the MOSFET in the linear regime of operation while …
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Page 6. Semiconductor parts with 027 in root number
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS .
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Page 48. Semiconductor parts with 102 in root number
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS .
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New analytical expressions for the design of linear power amplifier using GaN HEMTs
A reliable analytical approach proposed in [1] serves the purpose for Silicon RF power MOSFETs .
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A Novel Silicon High Voltage Vertical MOSFET Technology for a 100W L-Band Radar Application
The HVVFET™ (High Voltage Vertical Field Effect Transistor) is an advanced vertical MOSFET structure that expands the operating frequencies of vertical silicon RF power MOSFETs well into the microwave spectrum.
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More Electromagnetics? [review of "Electromagnetics for High-Speed Analog and Digital Communications Circuits" (Niknejad, A.M.; 2007)]
B. Jayant Baliga, Silicon RF Power MOSFETs (World Scientific, Singapore, 2005), 320 pp. [ISBN: 981-256-121-8].
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RF power LDMOSFET on SOI
The device performance compares favorably with bulk silicon rf power MOSFETs .