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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push-pull configurations. Can be used in manual gain control, ALC and modulation circuit
- Output Power: 100 watts
- Power Gain: 12 dB
- Operating Frequency: 2 to 400 MHz
- Transistor Type: MOSFET RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: RF Manual 16th edition Product overview: BF1216 from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement
- Transistor Type: MOSFET
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Supplier: DigiKey
Description: Manual Average Handheld Analog Multimeter Digit Scale Display Voltage, Current, Resistance Battery Test, dB, Transistor Gain Function Features
- Special Measurement Types: Battery Test, Transistor Test
- Form Factor: Handheld
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Supplier: Richardson RFPD
Description: 650 V universal mother board This universal mother board can be used with daughter cards (sold separately) to evaluate the entire GaN Systems 650 V family of GaN E-HEMT products. For instructions and user guides please consult the manuals of the individual daughter cards. Note: GS665MB-EVB is
- Category: Development Board
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Supplier: steute
Description: Enclosure width: 22.5 mm 2 NC or 1 NC/1 NO contact can be connected Feedback circuit 2 enabling paths 1 transistor output Manual or automatic reset LED indicator for switching condition Crossed wire monitoring
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Supplier: steute
Description: Features/Options Enclosure width: 22.5 mm 2 NC or 1 NC/1 NO contact can be connected Feedback circuit 2 enabling paths 1 transistor output Manual or automatic reset LED indicator for switching condition Crossed wire monitoring
- Maximum Current: 3 amps
- Maximum AC Switching Voltage: 230 volts
- Maximum DC Switching Voltage: 24 volts
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Supplier: Microchip Technology, Inc.
Description: temperature data to drive fan Supports DTS data from CPU Up to Three External Temperature Channels (EMC2103-2 only) Supports 45nm, 60nm, and 90nm CPU diodes Automatically detects and supports CPUs requiring BJT or Transistor models Resistance error correction Supports discrete
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Supplier: Telco Sensors Inc.
Description: Operation mode and max sensing range: Thru-beam: 0-60 m Diffuse proximity: 0-4 m 230 V ac, 115 V ac, 24 V ac or 24 V dc supply voltage Manual sensitivity adjustment 1 relay or 1 transistor output Switch selectable light or dark function Switch selectable long or short range Power and
- Analog Input Channels: 1 #
- Maximum Output: 250 volts
- Operating Temperature: 14 to 122 F
- Outputs: Current Output, Relay Output, Voltage Output
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Supplier: E-T-A Circuit Breakers
Description: transistors Mini circuit breakers with manual switching function Application examples: Control and monitoring of DC loads Control, dimming and monitoring of lights Control and monitoring of navigation lights Control and monitoring of the anchor light Voltage measurement Current
- Current Rating: 102 amps
- Operating Temperature: -40 to 185 F
- Voltage: 24 VDC
- Features: Other
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Supplier: Telco Sensors Inc.
Description: Operation mode and max sensing range: Thru-beam: 0-35 m Diffuse proximity: 0-2 m 230 V ac, 115 V ac, 24 V ac or 24 V dc supply voltage Manual sensitivity adjustment Adjustable on/off time delay 4 relays and/or 4 transistor individual outputs 1 relay and 1 transistor common
- Analog Input Channels: 4 #
- Maximum Output: 250 volts
- Operating Temperature: 14 to 122 F
- Outputs: Current Output, Relay Output, Voltage Output
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Supplier: Krohn-Hite Corporation
Description: dial setting. AC V (control voltage) output provides a +2mV to 3V DC voltage proportional to the generator frequency. The main output amplitude is adjustable from 5mV p-p to 20Vp-p, open circuit. Our exclusive WAVEGUARD™ output protection circuit solves the problem of blown output transistors
- Minimum Frequency Range: 0.00000020000000000000002 MHz
- Maximum Frequency Range: 3 MHz
- Operating Temperature: 14 to 113 F
- Form Factor: Fixed/Rack mount, Portable / Benchtop
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Supplier: Computer Network Accessories, Inc.
Description: Mini 3 1/2 digit digital multimeter with 19 ranges. Includes manual, test leads and battery. Features: Automatic polarity indication Voltage measurements: 500V AC and 500V DC max. Current measurements: 10A DC max. Resistance measurements: 2M Ohms Diode and transistor (hFE) test
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Supplier: Allied Electronics, Inc.
Description: 6-Digit; Auto or Manual Reset to Zero or Preset BatchCounter — Increment with Main Counter Recycle or Final Preset Signal; 6-Digit; Presets: 1 Totalizer — Bi-Directional, Same or Opposite of Main Counter; 8 Digits Rate Indicator — 1/Tau; 6-Digit; Presets: 2 Outputs: Transistor — NPN
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Supplier: Burkert Fluid Control Systems
Description: be parameterised manually either via three buttons (variant with a display) or by a computer via a serial interface. In the standard variant, the device is supplied with one or two transistor outputs and one digital input. Further options are available, e.g. high frequency output, current
- Media Temperature Range: -4 to 212 F
- Operating Temperature: -4 to 140 F
- Electrical Output: Analog Current
- Features: Liquid
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Supplier: Computer Network Accessories, Inc.
Description: 3 1/2 digit digital multimeter with 30 ranges, 10A. Includes manual, test leads, holster, battery and temperature probe. Features: Very complete model DMM Low battery indication, overload protection and automatic deactivation Transistor, diode and audible continuity test 20A max. DC
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Supplier: Tri-Tronics Company, Inc.
Description: Polarity Protected Current Requirements: 45mA (exclusive of load) Output Transistors: (Current Limited) (1) NPN and (1) PNP sensor output transistor (1) PNP Action Alert output transistor Sensor outputs can sink or source up to 150mA All outputs are continuously short circuit
- Operating Temperature: -40 to 158 F
- Electrical Output: Current
- Features: DC Powered, Photoelectric Sensors
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Supplier: Electro Optical Components, Inc.
Description: SDS high voltage pulse generators are based upon the use of field-effect transistor technology. They have the remarkable feature of being inserted into lightweight and reduced obstruction cases. GIPO generators can produce pulses that can reach 5.5kV with a rise time of a few nanoseconds,
- Minimum Frequency Range: 7 MHz
- Maximum Frequency Range: 7 MHz
- Operating Temperature: 32 to 104 F
- Rise Time: 2.5 ns
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Supplier: Tri-Tronics Company, Inc.
Description: Polarity Protected Current Requirements: 45mA (exclusive of load) Output Transistors: (Current Limited) (1) NPN and (1) PNP sensor output transistor (1) PNP Action Alert output transistor Sensor outputs can sink or source up to 150mA All outputs are continuously short circuit
- Operating Temperature: -40 to 158 F
- Electrical Output: Current
- Features: DC Powered, Photoelectric Sensors
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Photoelectric Sensors - SMARTYEYE ® PRO™, White LED, 6ft 5-wire cable, O5 Proximity Block -- SPBWLO5Supplier: Tri-Tronics Company, Inc.
Description: Supply Voltage: 10 to 30 VDC Polarity Protected Current Requirements: 45mA (exclusive of load) Output Transistors: (Current Limited) (1) NPN and (1) PNP sensor output transistor (1) PNP Action Alert output transistor Sensor outputs can sink or source up to 150mA All outputs are
- Operating Distance: 12 inch
- Operating Temperature: -40 to 158 F
- Electrical Output: Current
- Features: DC Powered, Photoelectric Sensors
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Supplier: Tri-Tronics Company, Inc.
Description: Supply Voltage: 10 to 30 VDC Polarity Protected Current Requirements: 45mA (exclusive of load) Output Transistors: (Current Limited) (1) NPN and (1) PNP sensor output transistor (1) PNP Action Alert output transistor Sensor outputs can sink or source up to 150mA All outputs are
- Operating Distance: 12 inch
- Operating Temperature: -40 to 158 F
- Electrical Output: Current
- Features: DC Powered, Photoelectric Sensors
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Supplier: Transcat, Inc.
Description: by and backed by B&K Precision, a company that has been selling reliable, durable, value priced test instruments for over 60 years. Delayed sweep in 23 steps Built in component tester for capacitors, inductors, diodes, transistors, zener diodes 23 step time base to 0.1ms/div Deluxe
- Bandwidth: 30 MHz
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Supplier: ValueTronics International, Inc.
Description: Short Circuit: 0.003 Ohms max. High Speed Adjustable Slew Rate Front Panel or Remote Control 19 inch Rack Mount - 5U high Pulse Load Shaping Full Range Switching Quiet Variable Speed Fans The Transistor Devices/Dynaload RBL488-100-600-4000 Dynaload provides the full capabilities of the RBL
- Load Bank Type: DC
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Supplier: ValueTronics International, Inc.
Description: controlled electronic signals. Additional Features: Programmable test fixture for the Type 576 curve tracer The Tektronix 172 Programmable Test Fixture is used with the 576 Curve Tracer. This module permits you to program a sequence of tests of J FETs, transistors, and diodes. Performs up to
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Supplier: Computer Network Accessories, Inc.
Description: 3 1/2 digit digital multimeter with 30 ranges, 20A. Includes manual, test leads, holster, battery and temperature probe. Features: Very complete model DMM Low battery indication, overload protection and automatic deactivation Transistor, diode and audible continuity test 10A max. DC
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Supplier: Telco Sensors Inc.
Description: Operation mode and max sensing range: Thru-beam: 0-47 m Diffuse proximity: 0-2,6 m 10 – 30 V dc and 24 V ac supply voltage Manual sensitivity adjustment Sensor LED-drive Automatic sensor test Adjustable on/off time delay 3 relay or 3 transistor outputs Switch selectable light or dark
- Analog Input Channels: 3 #
- Maximum Output: 250 volts
- Operating Temperature: 14 to 122 F
- Outputs: Current Output, Relay Output, Voltage Output
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Supplier: ValueTronics International, Inc.
Description: MHz 2 Channels Built-in component tester for capacitors, inductors, diodes, transistors, zener diodes Dual or single trace operation 5 mV/div sensitivity Compact low profile design Calibrated 23-step time base with X10 magnifier Video sync trigger Alternate/chop sweep Sum and difference
- Bandwidth: 30 MHz
- Number of Input Channels: 2 (# channels)
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Supplier: ValueTronics International, Inc.
Description: ground lead, 6 in. ground lead, instruction manual. The TPP0850 offers the industry’s highest bandwidth probe (800 MHz) for high-voltage signals (up to 2500 Vp-p). This is ideal for testing power semiconductors and switch-mode power supplies, which continue to increase in switching speed to
- Bandwidth: 800 MHz
- Voltage Rating: 1,000 volts
- Probe Type: Current, Voltage
- Probe Configuration: Hook
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Supplier: Electro-Sensors, Inc.
Description: Full Logic Control Process Counter Features • Displays process, batch, total, and rate • Full diagnostic functions • Three programmable transistor setpoint outputs and AC inputs • Non-volatile memory • Keypad lockout • ETL approved to applicable UL and CSA standards The CT6000 is completely
- Number Input Channels: 2
- Maximum Count Frequency: 20 kHz
- Number of Digits (or Characters): 6
- Digit Height: 0.3 inches
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Supplier: SMS Elotherm North America
Description: TUBE WELDING SMS Elotherm tube-welding systems are designed as economical modular units based on transistor technology ranging from 50-2000 kW. The ideal frequency selected from a range of 50-600 kHz guarantees optimal conditions for HF welding of steel, aluminum, brass or copper. The
- Process Capability: Welding Equipment
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Description: circuit components with an emphasis on techniques such as even and odd mode analysis and the use of symmetry properties Microwave linear amplifier and oscillator design using solid-state circuits such as varactor devices and transistors FOUNDATIONS FOR MICROWAVE ENGINEERING, Second Edition,
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Supplier: Infineon Technologies AG
Description: The BTF6070-2ERV is especially designed for applications with higher safety requirements, such as braking systems (ABS, ESP) and therefore ISO26262 qualified (ASIL B, Safety manual is available). The power transistor is built by a N-channel vertical power MOSFET with charge pump. The
- tON: 70,000 ns
- tOFF: 70,000 ns
- Operating Ambient Temperature: -40 to 150 C
- Features: Other
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Supplier: Laurel Electronics LLC
Description: follow the change, then reverts back to its selected time constant. An Auto setting selects the time constant selection based on signal noise. Two tare functions: auto-tare and manual tare. In auto-tare, an input line is grounded by an external pushbutton. In manual tare, the tare
- Number of Digits: 5
- Current Range: 0.0000000001 amps
- Width: 118.872 mm
- Height: 62.23 mm
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Supplier: Laurel Electronics LLC
Description: temperatures sensors and signal conditioner boards to be changed in the field without recalibrating the transmitter. Factory recalibration is recommended every 12 months. For cold junction compensation (CJC), an external transistor is mounted adjacent to the thermocouple input to measure
- Operating Temperature: -40 to 158 F
- Outputs: Current Loop (e.g., 4-20 mA), Voltage
- Features: DC Current
- Form Factor: DIN Rail
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Supplier: Laurel Electronics LLC
Description: be changed in the field without recalibrating the transmitter. Factory recalibration is recommended every 12 months. For cold junction compensation (CJC), an external transistor is mounted adjacent to the thermocouple input to measure ambient temperature. That transistor is calibrated
- Operating Temperature: -40 to 158 F
- Outputs: Current Loop (e.g., 4-20 mA), Ethernet, Voltage
- Features: DC Current
- Form Factor: DIN Rail
Find Suppliers by Category Top
Featured Products Top
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Rochester Electronics stocks over two-billion units of transistors and gate drive devices, covering 20,000-part numbers. Our inventory is a mix of both active and obsolete devices, with 40% exhibiting lead times greater than 20 weeks.
(read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Rochester Electronics -
In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt (read more)
Browse Power Bipolar Transistors Datasheets for Nexperia B.V. -
In an effort to streamline your manufacturing process and improve transistor cooling, Fujipoly® offers a large assortment of box-shaped Sarcon® (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
Fujipoly® tube-shaped thermal interface covers provide an easy way to improve transistor cooling while streamlining your manufacturing process. Sarcon® tubes and sleeves are available in several standard sizes to fit many common transistor types and can be custom ordered to your exact (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics -
Fujipoly® tube-shaped thermal interface covers provide an easy way to improve transistor cooling while streamlining your manufacturing process. Sarcon® (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
The Microchip 2N2907AUB is a high-performance PNP bipolar transistor offering excellent flexibility for multiple electronic applications. With its robust 600mA collector current capacity and a collector-emitter voltage (VCEO) of 60V, this component is designed to (read more)
Browse RF Transmitters Datasheets for LIXINC Electronics Co., Limited -
The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics
Conduct Research Top
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Outline of a Transistor
This is the classification based on the differences in the operating features. The classification is made as bipolar transistors and unipolar transistors.
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History of Transistors
The invention of the transistor that gave an unprecedented shock to the electronics industry at that time was made in the year 1948. That truly was the beginning of the current age of electronics. Thereafter, there have been extremely fast advances in electronics technology which includes computer
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Understanding transistors
In an NPN transistor, the Base is at positive bias, the Collector at negative bias, and reverse current flows from the Emitter to the Collector. Also, please consider problems arising from usage.
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What are Transistors? - Categories and Features of Si Transistors
From this section, we will discuss "Si transistors", which however include a number of categories, such as bipolar transistors and MOSFETs, depending on the manufacturing process and device structure.
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Operation and Modeling of the MOS Transistor
Operation and Modeling of the MOS Transistor. Geared toward advanced electrical engineering students, this extensive text provides a unified treatment of the operation and modeling of the MOS transistor, the key element of most modern microelectronic chips.
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Quantum Transport: Atom to Transistor
Quantum Transport: Atom to Transistor. Written for senior and graduate students, this book presents the conceptual framework underlying the atomistic theory of matter, emphasizing aspects that relate to current flow, including advanced concepts of non-equilibrium quantum statistical mechanics.
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JFET Application Note: Reset Transistor
In JFETs designed primarily for silicon drift detectors and Si(Li) detectors,. the reset transistor is configured as shown in Figure 1, with the base. shorted to the source, the collector shorted to the gate, and the emitter. connected to the reset pad. Since the gate-source JFET junction
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Microwave Field-Effect Transistors: Theory, Design, and Applications
Microwave Field-Effect Transistors: Theory, Design, and Applications. This text covers the use of devices in microwave circuits and includes topics such as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, S-parameter mapping, narrow- and broadband
More Information Top
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Modified instrument for measuring blood cell aggregation using the screen filtration pressure (SFP) technique
This circuit is modified from the one shown in the RCA transistor manual to suit mains voltage of 200-250 V.
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Microwave Circuit Design Using Linear and Nonlinear Techniques 2nd Edition Complete Document
RCA, RF Power Transistor Manual , RCA Solid State Division, Somerville, N.J., 1971.
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A sensitive method of Hall measurement
The constant current source used is adapted from the circuit given in the G E Transistor Manual (1964).
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A multipoint record from a single pen recorder
In this applica- tion the interval has been set at 2.5 s and a reading is repeated every 17.5 s. 3 The flip-flop Figure 2 illustrates a gated flip-flop (GeneralElectric Transistor Manual 1964).
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Hybrid sparse-matrix methods
Transistor Manual , General Electric Co., Syracuse,N.Y., 1964.
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Network statistics for computer-aided network analysis
Transistor Manual , General Electric Co., Syracuse,N.Y., 1964.
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Analysis of Requirements in Reliability Physics
General Electric Transistor Manual , 6th Edition.
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Marks’ Standard Handbook for Mechanical Engineers, Eleventh Edition > ELECTRONICS
“ Transistor Manual ,” General Electric Co.
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