Products & Services
See also: Categories | Featured Products | Technical Articles | More Information-
Description: Integrated Circuits (ICs) - Transistors - Intelligent Power Modules
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: SOP-23 Intelligent Power Modules (IPM) ROHS
-
Supplier: E-T-A Circuit Breakers
Description: The PowerPlex® DC024 is our Power Module with redundant protective functions for connected DC loads. One Power Module can control and monitor a total of twelve electrical loads. The module has a manual override function for each 8 A and 25 A output via integral
- Current Rating: 102 amps
- Operating Temperature: -40 to 185 F
- Voltage: 24 VDC
- Features: Other
-
-
Supplier: Radwell International
Description: POWER BLOCK, TRANSISTOR MODULE, IPM MODULE, FOR A06B-6089-HXXX, 80 AMP, 600 V, A50L-0001-0383. FREE 2 YEAR RADWELL WARRANTY
- Current Rating: 80 amps
- Terminal Block Type: Power Distribution Block
-
Supplier: Newark, An Avnet Company
Description: TRANSISTOR,IGBT POWER MODULE,FULL BRIDGE,600V V(BR)CES,21A I(C)
-
Supplier: Newark, An Avnet Company
Description: TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2kV V(BR)CES,200A I(C)
-
Supplier: Newark, An Avnet Company
Description: IGBT Power Module
-
Supplier: JC Cherry, Inc.
Description: Modular Socket for Power Semiconductor Package For Power Transistor For SIP Package For Intelligent Power Module(IPM) - Able to place with various layout according to the package. - Kelvin contact type. - High temperature type. - We also design and manufacture
- Contact Resistance: 20 milliohms
- Operating Temperature: -55 to 150 C
- Socket Type: DIP, SIP
- Contact Plating: Gold Plating
-
Supplier: Richardson RFPD
Description: consideration, but not guaranteed. This amplifier is suitable for broadband mobile jamming and band specific high power applications in the UHF, L, S and C frequency bands. This compact module utilizes the latest high power RF GaN transistors and also features built-in
-
Supplier: ROHM Semiconductor USA, LLC
Description: BSM300C12P3E201 is a SiC (silicon carbide) power module with Low surge and low switching loss, suitable for motro drive, converter, photovoltaics, wind power generation.
- V(BR)DSS: 1,200 volts
- IDSS: 300,000 milliamps
- PD: 1,360,000 milliwatts
- TJ: -40 to 125 C
-
Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products- Power Driver Modules Package: Tube Product Status: Active Type: IGBT Configuration: Half Bridge Voltage: 750 V Voltage - Isolation: 2500Vrms Mounting Type: Chassis Mount Package / Case: Module
- Features: IGBT
- Package Type: SOT3
-
Supplier: ODG (Origin Data Global)
Description: IGBT MODULE 1200V 16A 24PWRDIP
- Features: Other
-
Supplier: ROHM Semiconductor GmbH
Description: BM63577S-VA/-VC is an Intelligent Power Module composed of gate drivers, bootstrap diodes, IGBTs, fly wheel diodes.
- TJ: -40 to 125 C
- Transistor Grade / Operating Range: Commercial
- Features: IGBT, Other, Power MOSFET
- Packing Method: Shipping Tube / Stick Magazine
-
Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products -Power Driver Modules Series: CIPOS™ Package: Tube Product Status: Active Type: IGBT Configuration: 3 Phase Current: 15 A Voltage: 600 V Voltage - Isolation: 2000Vrms
- Features: IGBT
- Package Type: SOT3
-
Supplier: MACOM
Description: At MACOM we offer a broad range of bipolar technology RF power transistor products as discrete devices, modules, and pallets from DC to 3.5 GHz. Our high power bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial,
- Power Gain: 5.7 to 22 dB
- Operating Frequency: 1 to 3,500 MHz
- Output Power: 0.7 to 1,000 watts
- Features: Bipolar RF Transistors, Other
-
Supplier: Twilight Technology Inc.
Description: Twilight Technology, Inc. specializes in IC packaging and testing services focused on providing solutions for high reliability applications or obsolete components. Twilight Technology has manufactured and marketed a variety of standard and proprietary semiconductor packaging and memory module
- Features: Power BJT Transistors
-
Supplier: Newark, An Avnet Company
Description: PP - HIGH POWER MODULES ROHS COMPLIANT: YES
-
Supplier: Littelfuse, Inc.
Description: Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA100W1200TEH
- VCES: 1,200 volts
- Features: IGBT, Other
-
Supplier: Littelfuse, Inc.
Description: Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA80W1200TED
- VCES: 1,200 volts
- Features: IGBT, Other
-
Supplier: ROHM Semiconductor USA, LLC
Description: BM65364S-VA is an Intelligent Power Module composed of gate drivers, bootstrap diodes, MOSFETs.
- TJ: -40 to 125 C
- Transistor Grade / Operating Range: Commercial
- Features: Power MOSFET
- Packing Method: Shipping Tube / Stick Magazine
-
Supplier: Littelfuse, Inc.
Description: Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA80W1200PTEH
- VCES: 1,200 volts
- Features: IGBT, Other
-
Supplier: Littelfuse, Inc.
Description: Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA40W1200TED
- VCES: 1,200 volts
- Features: IGBT, Other
-
Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: IXYS Category: Discrete Semiconductor Products Transistors IGBTs IGBT Modules Series: XPT™, GenX3™ Package: Tube Product Status: Active Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector
- VCES: 1,200 volts
- Features: IGBT
- Package Type: SOT3
-
Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products- Transistors IGBTs- IGBT Modules Series: C Package: Tray Product Status: Active IGBT Type: Trench Field Stop Configuration: 2 Independent Power - Max: 1450 W Operating Temperature: -40°C ~ 125°C
- Features: IGBT
- Package Type: SOT3
-
Supplier: Richardson RFPD
Description: ISOTOP BOOST CHOPPER MOSFET POWER MODULE
- rDS(on): 0.1 ohms
- Features: MOSFET, Other, Power MOSFET
-
Supplier: Twilight Technology Inc.
Description: Twilight Technology, Inc. specializes in IC packaging and testing services focused on providing solutions for high reliability applications or obsolete components. Twilight Technology has manufactured and marketed a variety of standard and proprietary semiconductor packaging and memory module
- Features: Power MOSFET
-
Supplier: Richardson RFPD
Description: Dual-In-Line Package Intelligent Power Module
- Features: Other
-
Supplier: MACOM
Description: At MACOM we offer a broad range of bipolar technology RF power pallet amplifier products designed for applications from1.0 GHz to 3.5 GHz. Our high power pallets are ideal for civil avionics, radar, and industrial, scientific, and medical applications. Our all gold metallization
- Power Gain: 7 to 8 dB
- Operating Frequency: 2,700 to 3,500 MHz
- Output Power: 130 to 300 watts
- Features: Bipolar RF Transistors, Other
-
Supplier: MACOM
Description: At MACOM we offer a broad range of pulsed and linear RF power transistor products--discrete devices, modules, and pallets designed to operate from DC to 6 GHz. Our high power transistors are ideal for civil avionics, communications, networks, radar, and industrial,
- Power Gain: 11 to 14 dB
- Output Power: 18 to 45 watts
- Operating Frequency: 0 to 4,000 MHz
- Transistor Grade / Operating Range: Commercial, Industrial
-
Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65174-21 is being discontinued and is not recommended for new designs. The SKY65174-21 is a highly integrated Power Amplifier Module (PAM) intended for high performance Wireless Local Area Network (WLAN) requiring up to +27 dBm linear output power. The
- Frequency Range: 2,400 to 2,500 MHz
- Minimum Gain: 35 dB
- Maximum Gain: 35 dB
- Noise Figure: 7 dB
-
Supplier: Wolfspeed
Description: 39.5 dBm GaN on SiC Power Amplifier Module, 3300-3800 MHz The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with
-
Supplier: Solid State Devices, Inc.
Description: reputation has been built upon our unsurpassed technology and quality in the areas of high density/high power and high voltage discrete semiconductors and modules.
- Polarity: NPN
- Features: Other
-
Supplier: Solid State Devices, Inc.
Description: reputation has been built upon our unsurpassed technology and quality in the areas of high density/high power and high voltage discrete semiconductors and modules.
- Features: Other
- Polarity: PNP
-
Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Power Module
- Features: Bipolar RF Transistors
Find Suppliers by Category Top
Featured Products Top
-
friendly. Applications Signal Processing: Amplification and switching in audio and signal processing circuits. Amplifiers: Driver stages in amplifiers and low power consumption modules. Control (read more)
Browse Transistors Datasheets for Win Source Electronics -
Energy Fuji Electric Co., Ltd. is pleased to announce the launch of the HPnC Series, a new series of large-capacity industrial IGBT* modules for applications including power converters for solar and wind power generation systems. * Insulated-gate bipolar transistor (read more)
Browse Semiconductor Power Modules Datasheets for Fuji Electric Corp. of America -
Analog Devices' EVAL-ADuM4146WHB1Z is a half bridge gate drive board that allows simple evaluation of the performance of the ADuM4146 when driving advanced Wolfspeed third generation C3M™ silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (MOSFETs) and power modules (read more)
Browse Gate Drivers Datasheets for Richardson RFPD -
available RF Power Amplifier product portfolio for wireless infrastructure that spans multiple levels of integration, including; discrete transistors, multistage IC’s, and multi-chip modules (MCM), as well as leveraging GaN and Silicon LDMOS from the latest cutting edge NXP fabs (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Industry-first precision module for ultra-low power, ultra-low-voltage voltage clamp for systems starting at 5 Volts or less (read more)
Browse Uncategorized Products Datasheets for Advanced Linear Devices, Inc. -
this change and switch the output transistor. This sensing method allows the sensor to identify metallic objects without direct physical contact. It is particularly useful in industrial environments where a mechanical switch could be damaged by repeated (read more)
Browse Automotive Electrical Connectors Datasheets for ERSAELECTRONICS PTE. LTD.
Conduct Research Top
-
Meeting the Demand for Smaller and More Reliable Power Modules with the X Series RC-IGBTs
design, fabrication, and packaging technologies to improve on power density, thermal management, and efficiency, all while maintaining a bottom line in cost. Traditional insulated-gate bipolar transistors (IGBTs) have been ubiquitously leveraged in power electronics applications, but users looking
-
The Problem With Current Limit
Accessory module offered by Power Amp Design. Pick most any monolithic op amp available and you will undoubtedly see specifications for maximum output current and short circuit current. The output current is most often limited by a simple transistor circuit that senses the drop across a small value
-
EETimes.com | Electronics Industry News for EEs & Engineering Managers
licensing objectives. Xemod is a privately held, fabless maker of RF power amplifier modules and components based on lateral double-diffused transistor (LDMOS) technology. The company is based in Tempe, Arizona. Nvidia's profits plunge on soaring sales SANTA CLARA, Calif. -- Profits at graphics chip
More Information Top
Indicates content that may require registration and/or purchase.
-
Page 9. Semiconductor parts with 050 in root number
POWER TRANSISTOR MODULE .
-
Page 53. Semiconductor parts with 100 in root number
POWER TRANSISTOR MODULE .
-
Page 27. Semiconductor parts with 100 in root number
Power transistor module for power switching, AC and DC motor controls .
-
1.5 kW, S-band solid-state pulsed power amplifier with digitally controlled automatic gain equalizer circuit
The input signal of last stage is distributed by 2- way Wilkinson divider and then 1:2 power divider produce two sub signals to drive two transistor power modules .
-
Temperature effects on high power low on-resistance MOS-bipolar transistor module
The current ‘state-of-the-art’,favours power transistor modules which are best constructed with a large bipolar output module driven by a medium power MOSFET, to form a power MOS-bipolar, in a Darlington configu- ration (Fig. 1).
-
Page 20. Semiconductor parts with 150 in root number
POWER TRANSISTOR MODULE .
-
Page 16. Semiconductor parts with 300 in root number
POWER TRANSISTOR MODULE .
-
Effects of temperature on high power low on-voltage MOS-bipolar transistor module
The current “state-of-the-art”, favours power transis- tor modules which are best constructed with a large bipolar output module driven by a medium power MOSFET,to form a power MOS-bipolar, in a Darling- tonconfiguration (seeFig.
-
The Electric Car: development and future of battery, hybrid and fuel-cell cars
A snubber to control the shape of the switching waveform may be con- nected across each power transistor module and consists of a resistor- capacitor circuit in parallel with the power module, together with a small parasitic inductance in series with the …
-
The Power of Green: Mitsubishi 9900A Series High Efficiency True On-Line Double Conversion Uninterruptible Power Supply (UPS) (.pdf)
The custom Three Level Transistor Power Module (TLTPM) and integrated circuit utilized in the 9900A Series UPS is explained with the reliability of Three-Level circuit topology evaluated.