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Description: Integrated Circuits (ICs) - Transistors - Intelligent Power Modules
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Description: Integrated Circuits (ICs) - Transistors - Intelligent Power Modules
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Supplier: Twilight Technology Inc.
Description: and memory module solutions. Our customers benefit from our broad experience and expertise in design, IC packaging, component reliability, and quality testing. With 25 years of design experience, our engineering staff solves problems with footprint conversions, RoHS, BGA and flip chip
- Transistor Type: Power BJT Transistors
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Supplier: MACOM
Description: At MACOM we offer a broad range of bipolar technology RF power transistor products as discrete devices, modules, and pallets from DC to 3.5 GHz. Our high power bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial,
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial, Industrial
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Power Module
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: ISOTOP BOOST CHOPPER MOSFET POWER MODULE
- Package Type: Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: LCSC Electronics Technology (HK) Limited
Description: DIP-25 Intelligent Power Modules (IPM) ROHS
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOP-23 Intelligent Power Modules (IPM) ROHS
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Supplier: Radwell International
Description: TRANSISTOR MODULE HIGH POWER. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Radwell International
Description: POWER BLOCK TRANSISTOR MODULE. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Radwell International
Description: TRANSISTOR MODULE, POWER. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Radwell International
Description: POWER TRANSISTOR MODULE. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Richardson RFPD
Description: Full - Bridge MOSFET Power Module
- Package Type: Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Twilight Technology Inc.
Description: and memory module solutions. Our customers benefit from our broad experience and expertise in design, IC packaging, component reliability, and quality testing. With 25 years of design experience, our engineering staff solves problems with footprint conversions, RoHS, BGA and flip chip
- Transistor Type: Power MOSFET
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Supplier: LCSC Electronics Technology (HK) Limited
Description: IGBT DIP-26 Intelligent Power Modules (IPM) ROHS
- Transistor Type: IGBT
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Supplier: Richardson RFPD
Description: ISOTOP BOOST CHOPPER MOSFET POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies, Power Factor Correction, Brake Switch. Features: Power MOS V MOSFETs, ISOTOP Package (SOT-227), Very Low Stray Inductance, High Level of Integration.
- Package Type: Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Richardson RFPD
Description: ISOTOP BUCK CHOPPER MOSFET POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies. Features: Power MOS 7 MOSFETs, ISOTOP Package (SOT-227), Very Low Stray Inductance, High Level of Integration. Benefits: Outstanding Performance at High Frequency
- Package Type: Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products- Transistors IGBTs- IGBT Modules Series: C Package: Tray Product Status: Active IGBT Type: Trench Field Stop Configuration: 2 Independent Power - Max: 1450 W Operating Temperature: -40°C ~ 125°C
- Package Type: SOT3
- Transistor Type: IGBT
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Supplier: LCSC Electronics Technology (HK) Limited
Description: MOSFET 5A 500V SOP-23H Intelligent Power Modules (IPM) ROHS
- Transistor Type: MOSFET
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Supplier: MACOM
Description: At MACOM we offer a broad range of bipolar technology RF power pallet amplifier products designed for applications from1.0 GHz to 3.5 GHz. Our high power pallets are ideal for civil avionics, radar, and industrial, scientific, and medical applications. Our all gold metallization
- Package Type: Other
- Transistor Grade / Operating Range: Commercial, Industrial
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: IXYS Category: Discrete Semiconductor Products Transistors IGBTs IGBT Modules Series: XPT™, GenX3™ Package: Tube Product Status: Active Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector
- Package Type: SOT3
- Transistor Type: IGBT
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Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: Vishay General Semiconductor - Diodes Division Category: Discrete Semiconductor Products Transistors IGBTs IGBT Modules Package: Tube Product Status: Active IGBT Type: Trench Field Stop Configuration: Single Chopper
- Package Type: SOT3
- Transistor Type: IGBT
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Supplier: Win Source Electronics
Description: Manufacturer: AMIS Category: Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules Packaging: Bulk Part Status: Obsolete Resistance (Ohms): 5 Tolerance (+ or -): 5% Power (Watts): 30 W Temperature Coefficient: Y6P Operating Temperature: -40°C ~ 85°C Size /
- Package Type: SOT3
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Supplier: ODG (Origin Data Global)
Description: IGBT MODULE 1200V 16A 24PWRDIP
- Package Type: Other
- Polarity: Other
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Supplier: Fuji Electric Corp. of America
Description: Fuji Electric’s IGBT Module (or insulated-gate bipolar transistor) is a high-performance 7th generation IGBT/FWD chipset with a compact design that provides for greater power output. It has environmentally friendly modules with easy assemblage, solder-free options, and
- Output Current: 200 amps
- Output Voltage: 1200 volts
- Technology: IGBT, Intelligent Power Module (IPM)
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Supplier: ROHM Semiconductor GmbH
Description: BM65364S-VA is an Intelligent Power Module composed of gate drivers, bootstrap diodes, MOSFETs.
- Package Type: Other
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: ROHM Semiconductor USA, LLC
Description: BM65364S-VA is an Intelligent Power Module composed of gate drivers, bootstrap diodes, MOSFETs.
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: Semikron, Inc.
Description: MOSFET Modules - Best in class switching performance SEMIKRON produces MOSFET (Metal Oxide Semiconductor Field Effect Transistor) modules in single switch, halfbridge, H-bridge and 6 PACK configuration in SEMITOP and SEMITRANS packages.The available MOSFET modules in the
- Configuration: Half-Bridge, H-Bridge
- Output Current: 80 to 335 amps
- Output Voltage: 100 to 200 volts
- Technology: MOSFET
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Supplier: DigiKey
Description: 2.13-INCH PASSIVE NFC-POWERED E-
- Display Type: Graphic Display
- Technology: Thin Film Transistor (TFT)
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Supplier: E-T-A Circuit Breakers
Description: The PowerPlex® DC024 is our Power Module with redundant protective functions for connected DC loads. One Power Module can control and monitor a total of twelve electrical loads. The module has a manual override function for each 8 A and 25 A output via
- Certification: Other
- Current Rating: 102 amps
- Nominal Voltage: 24 VDC, Other
- Operating Temperature: -40 to 185 F
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Supplier: Advantech
Description: The ADAM-5056D features sixteen digital output channels with LED indicators. The digital outputs are open-collector transistor switches that you can control from the ADAM-5000 main unit. You also can use the switches to control solid-state relays. Operating voltage: 30 Vmax
- Analog Input Channels: 16 #
- Data Acquisition Device Type: Output Module
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Description: USB connector) Serial (true-RS232), I2c Interface, and SPI Integrated SD/MMC (Secure Digital/MultiMedia) Memory Slot! High Performance, Low Power AVR32 32-Bit Microcontroller Ethernet 10/100 Mbit/s Audio Out +12 Volt Powered Optional Enclosure
- Applications: Computer Applications
- Display Type: Graphic Display
- Features: Built-in Controller
- Technology: Thin Film Transistor (TFT)
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Supplier: Acme Chip Technology Co., Limited
Description: POWER MODULE
- Transistor Type: IGBT
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Supplier: Infineon Technologies AG
Description: PrimePACK™ 3+ 1200 V, 2400 A dual IGBT module with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. Also available with pre-applied Thermal Interface Material. Summary of Features Highest power density Best-in-class VCEsat
- Package Type: Other
- Transistor Grade / Operating Range: Industrial
- Transistor Type: IGBT
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Featured Products Top
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friendly. Applications Signal Processing: Amplification and switching in audio and signal processing circuits. Amplifiers: Driver stages in amplifiers and low power consumption modules. Control (read more)
Browse Transistors Datasheets for Win Source Electronics -
Energy Fuji Electric Co., Ltd. is pleased to announce the launch of the HPnC Series, a new series of large-capacity industrial IGBT* modules for applications including power converters for solar and wind power generation systems. * Insulated-gate bipolar transistor (read more)
Browse Semiconductor Power Modules Datasheets for Fuji Electric Corp. of America -
Analog Devices' EVAL-ADuM4146WHB1Z is a half bridge gate drive board that allows simple evaluation of the performance of the ADuM4146 when driving advanced Wolfspeed third generation C3M™ silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (MOSFETs) and power modules (read more)
Browse Gate Drivers Datasheets for Richardson RFPD -
available RF Power Amplifier product portfolio for wireless infrastructure that spans multiple levels of integration, including; discrete transistors, multistage IC’s, and multi-chip modules (MCM), as well as leveraging GaN and Silicon LDMOS from the latest cutting edge NXP fabs (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Industry-first precision module for ultra-low power, ultra-low-voltage voltage clamp for systems starting at 5 Volts or less (read more)
Browse Uncategorized Products Datasheets for Advanced Linear Devices, Inc. -
Advanced Linear Devices Inc. (ALD), a leader in specialty analog technology, has announced a first-to-market low power, low voltage, high-precision voltage-clamp module. The SABMBOVP family is an ideal clamping solution for critical mission applications deployed in business, safety, and security (read more)
Browse Datasheets for Advanced Linear Devices, Inc. -
Principle Low Dropout Regulators (LDOs) mainly ensure that the output voltage is steady. This output voltage is higher than the input power. It usually uses a P-channel MOSFET or a PNP bipolar junction transistor (BJT) to drive it carefully. This keeps it just under the set (read more)
Browse General Purpose Diodes Datasheets for ODG (Origin Data Global)
Conduct Research Top
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Meeting the Demand for Smaller and More Reliable Power Modules with the X Series RC-IGBTs
design, fabrication, and packaging technologies to improve on power density, thermal management, and efficiency, all while maintaining a bottom line in cost. Traditional insulated-gate bipolar transistors (IGBTs) have been ubiquitously leveraged in power electronics applications, but users looking
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The Problem With Current Limit
Accessory module offered by Power Amp Design. Pick most any monolithic op amp available and you will undoubtedly see specifications for maximum output current and short circuit current. The output current is most often limited by a simple transistor circuit that senses the drop across a small value
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
licensing objectives. Xemod is a privately held, fabless maker of RF power amplifier modules and components based on lateral double-diffused transistor (LDMOS) technology. The company is based in Tempe, Arizona. Nvidia's profits plunge on soaring sales SANTA CLARA, Calif. -- Profits at graphics chip
More Information Top
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Page 9. Semiconductor parts with 050 in root number
POWER TRANSISTOR MODULE .
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Page 53. Semiconductor parts with 100 in root number
POWER TRANSISTOR MODULE .
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Page 27. Semiconductor parts with 100 in root number
Power transistor module for power switching, AC and DC motor controls .
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1.5 kW, S-band solid-state pulsed power amplifier with digitally controlled automatic gain equalizer circuit
The input signal of last stage is distributed by 2- way Wilkinson divider and then 1:2 power divider produce two sub signals to drive two transistor power modules .
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Temperature effects on high power low on-resistance MOS-bipolar transistor module
The current ‘state-of-the-art’,favours power transistor modules which are best constructed with a large bipolar output module driven by a medium power MOSFET, to form a power MOS-bipolar, in a Darlington configu- ration (Fig. 1).
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Page 20. Semiconductor parts with 150 in root number
POWER TRANSISTOR MODULE .
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Page 16. Semiconductor parts with 300 in root number
POWER TRANSISTOR MODULE .
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Effects of temperature on high power low on-voltage MOS-bipolar transistor module
The current “state-of-the-art”, favours power transis- tor modules which are best constructed with a large bipolar output module driven by a medium power MOSFET,to form a power MOS-bipolar, in a Darling- tonconfiguration (seeFig.
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The Electric Car: development and future of battery, hybrid and fuel-cell cars
A snubber to control the shape of the switching waveform may be con- nected across each power transistor module and consists of a resistor- capacitor circuit in parallel with the power module, together with a small parasitic inductance in series with the …
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The Power of Green: Mitsubishi 9900A Series High Efficiency True On-Line Double Conversion Uninterruptible Power Supply (UPS) (.pdf)
The custom Three Level Transistor Power Module (TLTPM) and integrated circuit utilized in the 9900A Series UPS is explained with the reliability of Three-Level circuit topology evaluated.
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