Semiconductor Heterojunctions and Nanostructures

Appendix A: Tables

Overview

Table A1: Prefixes and Their Symbols for Decimal Multiples and Submultiples of Units

Decimal multiples

Decimal submultiples

Factor

Name

Symbol

Factor

Name

Symbol

10 24

yotta

Y

10 -24

yocto

y

10 21

zetta

Z

10 -21

zepto

z

10 18

exa

E

10 -18

atto

a

10 15

peta

P

10 -15

femto

f

10 12

tera

T

10 -12

pico

p

10 9

giga

G

10 -9

nano

n

10 6

mega

M

10 -6

micro

?

10 3

kilo

k

10 -3

milli

m

10 2

hecto

h

10 -2

centi

c

10 1

deka

da

10 -1

deci

d

Table A2: Effective Masses, in the Unit of m o, in Selected Semiconductors

Semiconductor

Electron effective mass

Heavy hole effective mass

Light hole effective mass

GaAs

0.067

0.45

0.082

AlAs

0.124

0.5

0.22

InP

0.077

0.60

0.012

InAs

0.026

0.41

0.025

InSb

0.014

0.44

0.016

GaSb

0.043

0.33

0.056

AlSb

0.12

GaP

0.17

0.67

GaN

0.20

0.80

0.30

InN

0.11

0.50

0.17

AlN

0.27

0.25

Si

m l = 0.98

m t = 0.19

0.49

0.16

SiC

0.60

ZnO

0.28

0.59

ZnS

0.28

0.49

CdS

0.14

0.51

CdTe

0.09

0.40

Table A3: Bandgap, Lattice Constant, Thermal Conductivity, and Density of Selected Semiconductors

Semiconductor

Bandgap, eV

Lattice constant, nm

Thermal conductivity, W/(cm C)

Density, g/cm 3 (at 300 K)

GaAs (ZB, D)

1.424 (300 K)

1.519 (0 K)

0.5653

0.50

5.318

AlAs (ZB, I)

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