Semiconductor Heterojunctions and Nanostructures

| Decimal multiples | Decimal submultiples | ||||
|---|---|---|---|---|---|
| Factor | Name | Symbol | Factor | Name | Symbol |
| 10 24 | yotta | Y | 10 -24 | yocto | y |
| 10 21 | zetta | Z | 10 -21 | zepto | z |
| 10 18 | exa | E | 10 -18 | atto | a |
| 10 15 | peta | P | 10 -15 | femto | f |
| 10 12 | tera | T | 10 -12 | pico | p |
| 10 9 | giga | G | 10 -9 | nano | n |
| 10 6 | mega | M | 10 -6 | micro | ? |
| 10 3 | kilo | k | 10 -3 | milli | m |
| 10 2 | hecto | h | 10 -2 | centi | c |
| 10 1 | deka | da | 10 -1 | deci | d |
| Semiconductor | Electron effective mass | Heavy hole effective mass | Light hole effective mass |
|---|---|---|---|
| GaAs | 0.067 | 0.45 | 0.082 |
| AlAs | 0.124 | 0.5 | 0.22 |
| InP | 0.077 | 0.60 | 0.012 |
| InAs | 0.026 | 0.41 | 0.025 |
| InSb | 0.014 | 0.44 | 0.016 |
| GaSb | 0.043 | 0.33 | 0.056 |
| AlSb | 0.12 | ||
| GaP | 0.17 | 0.67 | |
| GaN | 0.20 | 0.80 | 0.30 |
| InN | 0.11 | 0.50 | 0.17 |
| AlN | 0.27 |
| 0.25 |
| Si | m l = 0.98 m t = 0.19 | 0.49 | 0.16 |
| SiC | 0.60 | ||
| ZnO | 0.28 | 0.59 | |
| ZnS | 0.28 | 0.49 | |
| CdS | 0.14 | 0.51 | |
| CdTe | 0.09 | 0.40 |
| Semiconductor | Bandgap, eV | Lattice constant, nm | Thermal conductivity, W/(cm C) | Density, g/cm 3 (at 300 K) |
|---|---|---|---|---|
| GaAs (ZB, D) | 1.424 (300 K) 1.519 (0 K) | 0.5653 | 0.50 | 5.318 |
| AlAs (ZB, I) |