Products & Services
See also: Categories | Featured Products | Technical Articles | More Information-
Supplier: Richardson RFPD
Description: The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
- Output Power: 750 watts
- Power Gain: 19 dB
- Operating Frequency: 0 to 40 MHz
- Transistor Type: MOSFET RF Transistors
-
Supplier: MACOM
Description: At MACOM we offer a broad range of TMOS and DMOS RF power MOSFET transistor products as discrete devices from DC to 1.0 GHz. Our high power MOSFET transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical
- Output Power: 2 to 600 watts
- Power Gain: 8 to 21 dB
- Operating Frequency: 5 to 1,000 MHz
- Transistor Grade / Operating Range: Commercial, Industrial
-
Supplier: MACOM
Description: At MACOM we offer a broad range of pulsed and linear RF power transistor products--discrete devices, modules, and pallets designed to operate from DC to 6 GHz. Our high power transistors are ideal for civil avionics, communications, networks, radar, and industrial,
- Power Gain: 11 to 14 dB
- Output Power: 18 to 45 watts
- Operating Frequency: 0 to 4,000 MHz
- Transistor Grade / Operating Range: Commercial, Industrial
-
-
Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Package Type: TO-202
-
Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Transistor Type: General Purpose BJT
- Polarity: NPN
-
Supplier: Newark, An Avnet Company
Description: RF POWER TRANSISTOR, NPN, 18V 50MHZ M113; Transistor Polarity:NPN; Collector Emitter Voltage Max:18V; Transition Frequency:-; Power Dissipation:183W; Continuous Collector Current:12A; No. of Pins:4Pins; DC Current Gain hFE Min:10hFE RoHS Compliant: Yes
-
Supplier: Newark, An Avnet Company
Description: RF POWER TRANSISTOR, NPN 20V 500MHZ TO39; Transistor Polarity:NPN; Collector Emitter Voltage Max:20V; Transition Frequency:500MHz; Power Dissipation:1W; Continuous Collector Current:400mA; No. of Pins:3Pins; Product Range:-; MSL:- RoHS Compliant: Yes
-
Supplier: Qorvo
Description: the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier. The device is housed in an industry-standard 4 x 3 mm surface mount QFN package. Lead-free and
- Power Gain: 18.8 dB
- Operating Frequency: 0 to 6,000 MHz
- Features: Other
-
Supplier: Qorvo
Description: The QPD0060 is a wide band over-molded DFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0060 can be used in Doherty architecture for the final stage of a base station amplifier for small cell, microcell, and active antenna
- Power Gain: 25 dB
- Operating Frequency: 0 to 3,600 MHz
- Features: Other
-
Supplier: Qorvo
Description: Qorvo's QPD3800 is a discrete GaN on SiC HEMT which operates from 3.4-3.8 GHz. The device is a single stage matched power amplifier transistor. The QPD38000 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency
- Power Gain: 21 dB
- Operating Frequency: 3,400 to 3,800 MHz
- Features: Other
-
Supplier: ODG (Origin Data Global)
Description: ON5040 - RF POWER TRANSISTOR (AM
- Transistor Type: Bipolar RF Transistors
-
Supplier: Northrop Grumman Corporation
Description: resistance and high efficiency couple to provide nearly imperceptible droop across the entire TDMA burst waveform at power levels of over 200 watts. WPTB64A1011Ax Class C 1030/1090 MHz Bipolar RF Transistor The WPTB64A1011Ax is an application specific transistor
- IC(max): 18,000 milliamps
- VCBO: 70 to 85 volts
- Power Gain: 7.4 to 9 dB
- Operating Frequency: 960 to 1,215 MHz
-
Supplier: VAST STOCK CO., LIMITED
Description: RF Bipolar Transistors
- Transistor Type: Bipolar RF Transistors
-
Supplier: Qorvo
Description: Qorvo's QPD3601 is a discrete GaN on SiC HEMT which operates from 3.4-3.6 GHz. The device is a single stage matched power amplifier transistor. The QPD3601 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency
- Power Gain: 22 dB
- Operating Frequency: 3,400 to 3,600 MHz
- Features: Other
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Low-Power. Search-friendly keywords include transistor, BJT, switching, amplification, Low-Power, Bipolar Transistor, Bipolar RF
- Transistor Type: Bipolar RF Transistors
-
Supplier: Utmel Electronic Limited
Description: POWER BIPOLAR TRANSISTOR
- VCEO: 60 volts
- Output Power: 2 watts
- TJ: 150 C
- Transistor Type: Bipolar RF Transistors
-
Supplier: Newark, An Avnet Company
Description: RF POWER TRANSISTOR, 1GHZ, 3.6V, NSOIC-8; Frequency Min:0Hz; Frequency Max:1GHz; Gain:11.6dB; Noise Figure Typ:3.3dB; RF IC Case Style:NSOIC; No. of Pins:8Pins; Supply Voltage Min:-; Supply Voltage Max:3.6V; Product Range:- RoHS Compliant: Yes
-
Supplier: Newark, An Avnet Company
Description: RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V / REEL RoHS Compliant: Yes
-
Supplier: Utmel Electronic Limited
Description: Transistors RF MOSFET Power 60W 1GHZ FET TO-270
- V(BR)DSS: 65 volts
- Number of Transistors in the Chip: 1
- Output Power: 60 watts
- Power Gain: 18 dB
-
Supplier: Utmel Electronic Limited
Description: MRFE6VS Series 133 V 512 MHz RF Power LDMOS Transistor - TO-270-2
- Power Gain: 25.4 dB
- Output Power: 25 watts
- Features: Other, Tape Reel
-
Supplier: Micross Components, Inc.
Description: Micross Continues to Build Inventory on the Industry's Most Popular Parts Part Number - Manufacturer - Description - Availability - Request Quote 1N3595 Fairchild/Onsemi High Conductance Fast Diode Available
-
Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1037383-2SD1829 Polarity: NPN Number of Pins: 3 Categories: RF Transistors(BJT) Popularity: Low Fake Threat In the Open Market: 53 pct. Supply and Demand Status:
- Transistor Type: Bipolar RF Transistors, Darlington
- Polarity: NPN
- Features: Other
- Package Type: SOT3, TO-220
-
Supplier: DigiKey
Description: RF Transistor NPN 65V 7.7A 65W
- Polarity: NPN
-
Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor Summary of Features General purpose low noise amplifier for low voltage, low current applications High ESD robustness, typical 1500V (HBM) Low minimum noise figure 1.1 dB at 1.8 GHz High linearity: output compression point OP1dB = 13 dBm @ 3V, 35mA, 1.8GHz
- Features: Other, Tape Reel
-
Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1242498-RF1K49156 Manufacturer Homepage: www.fairchildsemi.com RoHS State: Request Verification Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient
- Transistor Type: MOSFET, Power MOSFET
- Package Type: SOT3
-
Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60610NY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board
- VCEO: -60 volts
- IC(max): -10 milliamps
- PD: 1.5 milliwatts
- TJ: 175 C
-
Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board
- VCEO: 60 volts
- IC(max): 3 milliamps
- PD: 1.25 milliwatts
- TJ: 175 C
-
Supplier: Infineon Technologies AG
Description: Home // Products // RF // High Reliability Discrete // HiRel Radiation Hard PowerMOS Transistor // CHIP L5490 (P)
- Features: Other, Tray
-
Supplier: Texas Instruments
Description: Ultra Reliable Power Transistor 3-TO-220 0 to 125
- Transistor Type: MOSFET
-
Supplier: Win Source Electronics
Description: Manufacturer: Broadcom Limited Win Source Part Number: 61945-AT-41511 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 11dB to 15.5dB Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1dB to 1.7dB @ 900MHz to 2.4GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature
- IC(max): 50 milliamps
- VCEO: 12 volts
- Power Gain: 30 dB
- Noise Figure: 1 dB
-
Supplier: Infineon Technologies AG
Description: The BFP843F is a robust low noise broadband pre-matched hetero-junction bipolar transistor (HBT). Summary of Features Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5kV HBM ESD hardness High transition frequency fT = 60 GHz
- Features: Other, Tape Reel
-
Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61006NY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board
- VCEO: -100 volts
- IC(max): -6 milliamps
- PD: 1.3 milliwatts
- TJ: 175 C
-
Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60406PY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board
- VCEO: 40 volts
- IC(max): 6 milliamps
- PD: 1.35 milliwatts
- TJ: 175 C
-
Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1059451-FMMT4123TA Packaging: Tape & Reel (TR) Current Rating: 200 mA Mounting: SMD (SMT) Polarity: NPN Gain Bandwidth Product: 250 MHz Categories: RF
- VCEO: 30 volts
- PD: 330 milliwatts
- Operating Frequency: 200 MHz
- Output Power: 0.33 watts
-
Supplier: Infineon Technologies AG
Description: Home // Products // RF // High Reliability Discrete // HiRel Radiation Hard PowerMOS Transistor // CHIP L5462A(P)
- Features: Other, Tray
Find Suppliers by Category Top
Featured Products Top
-
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
Family of RF Power Macro GaN Transistors from NXP (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
available RF Power Amplifier product portfolio for wireless infrastructure that spans multiple levels of integration, including; discrete transistors, multistage IC’s, and multi-chip modules (MCM), as well as leveraging GaN and Silicon LDMOS from the latest cutting edge NXP fabs (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
perform optimally in customer-specific circuits and improve your production yields. Also, several RF and DC power circuits can be improved if the transistors are DC matched for specific characteristics. Let Richardson RFPD perform this testing for you, and ensure you are only purchasing product that will work in your system (read more)
Browse RF Transistors Datasheets for Richardson RFPD -
RIAA phono stages: tube and transistor designs Switching power supply design and manufacture Automated PCV assembly including surface mount and through-hole components Manual assembly and soldering with trained and certified operators (read more)
Browse Audio Transformers Datasheets for Triad Magnetics
Conduct Research Top
-
AN721: Impedance Matching Networks Applied to RF Power Transistors, Courtesy of Motorola
be considered as a corollary of the matching circuit. Matching is necessary for the best possible energy transfer from stage to stage. In RF-power transistors the input impedance is of low value, decreasing as the power increases, or as the chip size becomes larger. This impedance must be matched
-
Silicon RF Power MOSFETS
Silicon RF Power MOSFETS. Providing general guidelines for understanding the design and operation of the transistors, this book describes the physics, design considerations and RF performance of silicon power MOSFETs.
-
RF Power: GaN Moves In for the Kill
papers, analyst reports, and corporate brochures. After all, GaN has at least ten times the power density per millimeter of transistor gate periphery, higher operating voltages (reducing impedance transformation issues), higher efficiency, and the ability to combine high RF power output over broad
-
Microwave RF: GaN Devices Raising the Output-Power Performance Bar
Solid-state power comes in many forms, although the fastest-growing high-frequency, high-power semiconductor technology may be based on gallium nitride (GaN). GaN power transistors have long been the active-device building blocks for linear and compressed power amplifiers in L- and S-band military
-
Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
-
EETimes.com | Electronics Industry News for EEs & Engineering Managers
licensing objectives. Xemod is a privately held, fabless maker of RF power amplifier modules and components based on lateral double-diffused transistor (LDMOS) technology. The company is based in Tempe, Arizona. Nvidia's profits plunge on soaring sales SANTA CLARA, Calif. -- Profits at graphics chip
More Information Top
Indicates content that may require registration and/or purchase.
-
http://www.nxp.com/documents/handbook/RF_Fundamentals.pdf
The emitter of an RF power transistor must be dimensioned such that the transistor can deliver the required output power with all performance-degrading effects such as capacitances minimized.
-
RF Power Amplifiers
RF Power Transistors 339 .
-
Page 1. Semiconductor parts with 107 in root number
NPN SILICON RF POWER TRANSISTOR .
-
http://www.nxp.com/documents/handbook/SC19_RF_POWER_TRANS_CHAR_1.pdf
RF power transistors characteristics .
-
http://www.nxp.com/documents/selection_guide/75016687.pdf
We’ve updated the content on RF small-signal products, and have added a new section on RF power transistors .
-
Page 4. Semiconductor parts with 100 in root number
NPN silicon RF power transistor .
-
Page 3. Semiconductor parts with 191 in root number
12 watts, 1.78-1.92 GHz RF power transistor .
-
http://www.nxp.com/documents/selection_guide/75017428.pdf
Also included are next-generation devices and enhanced products such as 8th generation LDMOS transistors (Gen8), GPS LNAs, wireless infrastructure LNAs, satellite downconverters, CATV power doublers, overmolded plastic (OMP) RF power transistors , GaN power amplifiers, and low-power wireless microcontrollers.
-
Subject index
Kim, S.J., +, MWSYM-03 2003 627-630 vol.1 Analytic expressions for optimum source & load impedance and assoc. large-sig. gain of RF power transistor .
-
Lateral Power Transistors in Integrated Circuits
A. Wood, W. Brakensiek, C. Dragon, W. Burger, 120 Watt, 2 GHz, Si LDMOS RF power transistor for PCS base station applications, in IEEE MTT-S International Microwave Symposium (Baltimore, USA, 1998) 14.