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Supplier: Accuris
Description: German Language - SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANI CAL DEVICES - PART 5: RF MEMS SWITCHES
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANI CAL DEVICES - PART 5: RF MEMS SWITCHES
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANI CAL DEVICES PART 5: RF MEMS SWITCHES
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Supplier: CSA Group
Description: IEC 62047-5:2011 describes terminology, definition, symbols, test methods that can be used to evaluate and determine the essential ratings and characteristic parameters of RF MEMS switches. The statements made in this standardization are also applicable to RF (Radio
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Description: IEC 62047-5:2011 describes terminology, definition, symbols, test methods that can be used to evaluate and determine the essential ratings and characteristic parameters of RF MEMS switches. The statements made in this standardization are also applicable to RF (Radio
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Supplier: Analog Devices, Inc.
Description: , significantly reducing input referred quiescent current. The LT8415 also features a comparator built into the SHDN pin, overvoltage protection for the CAP, VOUT, OUT1 and OUT2 pins, built in soft start and comes in a tiny 12-pin 3mm × 2mm DFN package. Applications Sensor Power RF
- IC Package Type: Other
- Operating Temperature: -40 to 125 C
- Regulator Category: Switching Regulator
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Supplier: Infineon Technologies AG
Description: -G | F-RAM (Ferroelectric RAM) CY8C5868LTI-LP039 | CY8C58LPxxx BTS118D | Classic HITFET™ 12V | Automotive Low-Side Switch IM69D130 | MEMS microphones for consumer IRF530NS | N-Channel Power MOSFET CY8CMBR3002-SX1I
- Features: RoHS Compliant
- IC Package Type: Other
- Supply Voltage: Other
- TJ: -40 to 85 C
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Supplier: Samsung Electro-Mechanics
Description: heat dissipation characteristics Application PA(Power Amplifier), PAD(Power Amplifier Duplexer) BAW(Bulk Acoustic Wave) Filter SAW(Surface Acoustic Wave) Filter RF parts including various switches Why Samsung
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Supplier: Infineon Technologies AG
Description: -RAM (Ferroelectric RAM) FM25V10-G | F-RAM (Ferroelectric RAM) IM69D130 | MEMS microphones for consumer BFR193F | High Linearity RF Transistors BSC039N06NS | N-Channel Power MOSFET 2EDL05N06PF | Gate Driver ICs BGA725L6 | GNSS LNAs
- Input (Supply) Voltage: 1.7 to 3.6 volts
- Operating Temperature: -40 to 85 C
- Packing Method: Tape Reel
- Pressure Range: 4.35 to 17.4 psi
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Supplier: Knowles
Description: switchable gain "Zero height" for thinnest ever designs Built on our CMOS/MEMS technology platform (originally launched in 2002), the SiSonic™ silicon-based microphone series is entering its fourth generation of development, with product shipments exceeding 1 billion units to
- Microphone Sensitivity: 50.12 mV/Pa
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Supplier: Knowles
Description: switchable gain "Zero height" for thinnest ever designs Built on our CMOS/MEMS technology platform (originally launched in 2002), the SiSonic™ silicon-based microphone series is entering its fourth generation of development, with product shipments exceeding 1 billion units to
- Impedance: 400 ohms
- Microphone Sensitivity: 12.59 mV/Pa
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Supplier: Knowles
Description: switchable gain "Zero height" for thinnest ever designs Built on our CMOS/MEMS technology platform (originally launched in 2002), the SiSonic™ silicon-based microphone series is entering its fourth generation of development, with product shipments exceeding 1 billion units to
- Impedance: 100 ohms
- Microphone Sensitivity: 79.43 mV/Pa
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Supplier: Knowles
Description: switchable gain "Zero height" for thinnest ever designs Built on our CMOS/MEMS technology platform (originally launched in 2002), the SiSonic™ silicon-based microphone series is entering its fourth generation of development, with product shipments exceeding 1 billion units to
- Impedance: 400 ohms
- Microphone Sensitivity: 12.59 mV/Pa
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Supplier: Infineon Technologies AG
Description: The IRPS5401 is a complete power management unit delivering up to 5 output voltages to processors, FPGA’s and other multi-rail power systems. Four high efficiency configurable switching regulators and a source/sink linear regulator provide the typical rails required such as core voltage
- IC Package Type: Other
- Output Current (IOUT): 50 amps
- Regulated Output Voltage (Volt): 0.2500 to 5.1 volts
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Description: characterization for rf/microwave amplifier, oscillator, and filter circuit design and analysis. You will understand why capacitors act as inductors and vice versa and why amplifiers work like oscillators, while oscillators for local area networks work more like local area heaters.
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XM Series is RF Switch based on SOI "Silicon On Insurator" and GaAs "gallium arsenide" process. It is suitable product for Radio Frequency applications such as Cellular or ISM band widely. Switch control Interface supports GPIO and MIPI with various configurations: High Power, High Isolation, excellent linearity and Insertion Loss. (read more)
Browse RF Switches Datasheets for Murata Electronics -
innovation since the transistor with its Ideal Switch® technology, released to production a new 6x SPST (Single Pole Single Throw) relay solution fully integrated with relay driver and charge pump. The MM1205 is a single (read more)
Browse RF Switches Datasheets for Menlo Microsystems, Inc. -
The JFW model 75S-243 is a 1P16T self-terminating RF switch. This RF switch covers DC-1000MHz and comes with either BNC female or precision F female RF connectors. Its simple TTL control makes it ideal for routing CATV signals or for use in constructing a 75 Ohm matrix switch. (read more)
Browse RF Switches Datasheets for JFW Industries, Inc. -
Model 50S-1554 is a 50 Ohm solid-state reflective 1P2T RF switch operating 20-500 MHz. The RF power rating for this 1P2T is 150 Watts (cold switch) and 150 Watts (hot switch). The unused port is reflective. It is available with 50 Ohm RF connectors: SMA, TNC or N female. This 1P2T has one (read more)
Browse RF Switches Datasheets for JFW Industries, Inc. -
Model 50S-1832 is a high peak power 50 Ohm solid-state reflective 1P2T RF switch operating 960-1300 MHz. The RF power rating for this 1P2T is 200 Watts average (cold switch) and 1000 Watts peak with 35 microsecond pulse width. The unused port is reflective. It is available with 50 Ohm RF (read more)
Browse RF Switches Datasheets for JFW Industries, Inc. -
The 50S-1720 (1P2T), 50S-1721 (1P4T), and 50S-1722 (1P8T) are JFW's newest line of PIN-Diode RF switches. They boast an operating frequency from 0.5-18GHz, 50dB minimum isolation at 18 GHz, and a maximum switching speed of 100 nanoseconds. Their compact, self-terminating design makes them (read more)
Browse RF Switches Datasheets for JFW Industries, Inc. -
The 50S-1720 (1P2T), 50S-1721 (1P4T), and 50S-1722 (1P8T) are JFW's newest line of PIN-Diode RF switches. They boast an operating frequency from 0.5-18GHz, 50dB minimum isolation at 18 GHz, and a maximum switching speed of 100 nanoseconds. Their compact, self-terminating design makes (read more)
Browse RF Switches Datasheets for JFW Industries, Inc. -
Introducing the 50S-1820 and 50S-1821 from JFW, our latest innovations in our line of high-power, solid-state RF switches. The 50S-1820 is capable of switching 100-Watts of RF power from 800-2700 MHz (cold switch), while the 50S-1821 will switch 75-Watts from 800-3000 MHz. Both switches boast 10 (read more)
Browse RF Switches Datasheets for JFW Industries, Inc. -
JFW model 50S-1772+XX is a failsafe electro-mechanical 1P2T coaxial switch for RF testing. It operates DC-40 GHz and has 2.9mm female RF connectors. It is (read more)
Browse RF Switches Datasheets for JFW Industries, Inc. -
Our products are in-stock and ready to ship today! Connecting people and things has never been more important than right now. We are here to keep your RF designs moving forward with our portfolio of off-the-shelf SPDT and SP3T switches for handset, WLAN, base (read more)
Browse RF Switches Datasheets for Skyworks Solutions, Inc.
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RF MEMS: Theory Design and Technology
… Conclusion, 447 Bibliography, 447 15 Future Work in RF MEMS 15.1 Summary of Accomplished Work, 449 15.2 Future Work, 453 Appendix A Detailed Analysis and Measurements of Intermodulation Distortion and Power Handling in RF MEMS Switches , Varactors, and Tunable Filters …
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https://uwspace.uwaterloo.ca/bitstream/handle/10012/878/mdaneshm2006.pdf?sequence=1
Multi-Port RF MEMS Switches and Switch Matrices .
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MEMS Reliability
Compared to existing solid-state technologies for switching 1–40 GHz signals, RF MEMS switches offer the potential for lower insertion loss, extremely high lin- earity, and greatly reduced power consumption, in addition to possible integration with microwave circuits.
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http://dspace.mit.edu/bitstream/handle/1721.1/53152/505599029-MIT.pdf?sequence=2
RF MEMS Switches : Survey and Analysis .
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https://www.duo.uio.no/bitstream/handle/10852/36070/1337_-li_materie-DUO.pdf?sequence=1
Physical model for charge accumulation and technology development for robust RF MEMS switches .