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Standards and Technical Documents - Semiconductor devices - Micro-electromechanical devices - Part 5: RF MEMS switches -- IEC 62047-5:2011
Description: IEC 62047-5:2011 describes terminology, definition, symbols, test methods that can be used to evaluate and determine the essential ratings and characteristic parameters of RF MEMS switches. The statements made in this standardization are also applicable to RF (Radio Frequency) MEMS (Micro-ElectroShow More
Supplier: ValueTronics International, Inc.
Description: Noise: -140dBc/Hz to -116dBc/Hz Modulation: AM/FM Interface: RS - 232 and IEEE - 488 Output Accuracy : 2dB Overload protection Simultaneous modulation External Triggering FlexProtocol LF Generator DM Mem extension 8-bit Rear connectors for RF & LF Digital Modulation No ext
- Device Type: Generator
- Generator Type: Signal
Description: and Systems; - Filters: Analog, Passive, Switched-Capacitor, and Digital Filters, Wavelets and Filterbanks; - General Circuits and System Theory: Optimization, Graphs and Computational Methods, Simulation, Modeling and Analysis; - Circuit Design: Discrete Circuit, Integrated Circuit, and VLSI CircuitShow More
Technical Books - Introduction to Microwave Circuits:Radio Frequency and Design Applications -- 9780470545003
Description: and circuit characterization for rf/microwave amplifier, oscillator, and filter circuit design and analysis. You will understand why capacitors act as inductors and vice versa and why amplifiers work like oscillators, while oscillators for local area networks work more like local area heatersShow More
Supplier: Renaissance Electronics Corporation
Description: No Description Provided
- Frequency Range: 0.0 to 2.50E9 Hz
- Isolation (Port to Port): 40 dB
- Switching Speed: 50000 ns
- VSWR: 1.4 :1
Supplier: Samsung Electro-Mechanics
Description: Amplifier), PAD(Power Amplifier Duplexer) BAW(Bulk Acoustic Wave) Filter SAW(Surface Acoustic Wave) Filter RF parts including various switches Why Samsung Features of Products (Technology) Can realize small packages and low costs as multiple ICs and passive components are integrated into oneShow More
Description: New MaxRF models eliminate GSM/TDMA burst noise and provide wide-band RF noise suppression UltraMini footprint - less than 11.5mm Slim UltraMini footprint - less than 8.5mm Digital mics eliminate analog noise Integrated designs with differential or switchable gain "Zero height" for thinnest
- Microphone Sensitivity: 7.94 mV/Pa
- Impedance: 400 ohms
Supplier: MKS Instruments, Inc.
Description: elite„¢ RF plasma generators provide state-of-the art technology in a compact air-cooled package. Each elite„¢ RF Power Supply is designed with high speed closed loop control, a class E RF deck and a switching modulator for superior output performance. Its design utilizesShow More
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RF MEMS: Theory Design and Technology
… Conclusion, 447 Bibliography, 447 15 Future Work in RF MEMS 15.1 Summary of Accomplished Work, 449 15.2 Future Work, 453 Appendix A Detailed Analysis and Measurements of Intermodulation Distortion and Power Handling in RF MEMS Switches , Varactors, and Tunable Filters …
Multi-Port RF MEMS Switches and Switch Matrices .
Compared to existing solid-state technologies for switching 1–40 GHz signals, RF MEMS switches offer the potential for lower insertion loss, extremely high lin- earity, and greatly reduced power consumption, in addition to possible integration with microwave circuits.
RF MEMS Switches : Survey and Analysis .
Physical model for charge accumulation and technology development for robust RF MEMS switches .