Detector Diodes
Last Updated: April 1, 2025
Description
Detector diodes are semiconductor devices that convert alternating current (AC) signals into direct current (DC) signals. They are primarily used to detect the presence of radio frequency (RF) signals by rectifying them, which means they allow current to flow in only one direction, effectively converting the AC signal into a DC output.
Working Principle
Detector diodes operate based on the principle of rectification, where they conduct current in one direction while blocking it in the opposite direction. This is achieved through the P-N junction, which allows electrons to flow from the N-type material to the P-type material when forward-biased, but not in the reverse direction. This property makes them useful for converting RF signals into a measurable DC voltage, which can then be used for further processing or measurement. The efficiency of this conversion is enhanced by the diode's ability to respond quickly to changes in the input signal, making them ideal for applications requiring fast detection and response times.
Applications
Detector diodes are widely used in RF and microwave applications. They are integral components in RF power meters, where they convert RF power into a DC voltage that can be measured. They are also used in demodulation circuits to extract audio signals from modulated RF carriers. In addition, detector diodes are employed in radar systems and communication devices to detect and process incoming signals.
Advantages over other Diodes
Detector diodes, particularly those based on Schottky barrier technology, offer several advantages over other types of diodes. They have a lower forward voltage drop, which allows them to detect lower signal levels more effectively. Additionally, they exhibit faster switching speeds and reduced stored charge effects, making them more suitable for high-frequency applications compared to traditional diodes.
Limitations
One limitation of detector diodes is their sensitivity to excessive forward current, which can lead to high power dissipation and potential damage. They also have a limited dynamic range, which can restrict their performance in applications requiring the detection of very weak or very strong signals.
Considerations
When selecting detector diodes, several factors should be considered. Initial costs can vary depending on the technology used, with gallium-arsenide-based diodes typically being more expensive than silicon-based ones due to their superior performance at microwave frequencies. Operating expenses are generally low, but the durability and accuracy of the diodes can be affected by environmental conditions and signal levels. Replacement and maintenance costs are usually minimal, but it is important to ensure that the diodes are not subjected to conditions that exceed their specified limits to avoid premature failure.
from Hamamatsu Photonics
One-dimensional 128 ch array, Pixel pitch: 57.5 × 62.5 μm. The S13552 is a one-dimensional 128-element MPPC array. This is used by the SciFi (scintillating fiber) tracker in LHCb (Large Hadron Collider beauty experiment), one of detectors located at the LHC of CERN (European Organization... [See More]
- Diode Applications: Detector
from Rochester Electronics
RF Mixer and Detector Schottky Diode [See More]
- Diode Applications: Detector; Mixer
- RoHS Compliant: RoHS
- Diode Type: Schottky; RF Diodes
from Nexperia B.V.
The NID1100 is a low forward-voltage drop ideal diode with forward and reverse voltage blocking. It can be used to replace rectifiers in low voltage systems unable to tolerate the high voltage drops of conventional Schottky diodes. The device operates over an input voltage range of 1.5 V to 5.5 V... [See More]
- Diode Applications: Detector; Protector; Power Diodes
- RoHS Compliant: RoHS
from Infineon Technologies AG
Silicon Schottky Diodes. Summary of Features. Low barrier diode for detectors up to GHz frequencies. Pb-free (RoHS compliant) package. Potential Applications. Wireless Communications. Satellite Receivers. Base Stations. High Speed Data Networks. RFID. Applications. Automotive telematics control unit... [See More]
- Diode Applications: Detector; Mixer
- VF: 0.5000
- Diode Type: Schottky; RF Diodes
- IF: 20
from RS Components, Ltd.
BAT62 dual Schottky detector [See More]
- Diode Applications: Rectifier; Detector
- IF: 20
- Diode Type: Schottky
- RoHS Compliant: RoHS
from Hamamatsu Photonics
Low breakdown voltage type MPPC for scintillation detector. The S14160 series achieve higher PDE (photon detection efficiency) and lower operation voltage than other MPPC to adapt for PET and radiation monitor application. They achieve small dead space in a photosensitive area with HWB (hole wire... [See More]
- Diode Applications: Detector
from Rochester Electronics
RF Mixer and Detector Schottky Diode [See More]
- Diode Applications: Detector; Mixer
- RoHS Compliant: RoHS
- Diode Type: Schottky; RF Diodes
from Nexperia B.V.
High performance voltage regulator diodes in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. Features and benefits. Very low dynamic impedance at low currents: approximately 5 % of conventional series. Hard breakdown knee. Low noise: approximately 10 % of conventional series. [See More]
- Diode Applications: Limiter; Detector; Power Diodes
- IF: 250
- Diode Type: Avalanche Diodes
- Tj: 150
from Infineon Technologies AG
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02EL a suitable choice for mixer and detector functions in applications which... [See More]
- Diode Applications: Detector; Mixer
- VF: 0.2500 to 0.3200
- Diode Type: Schottky; RF Diodes
- IF: 110
from Hamamatsu Photonics
Low breakdown voltage type MPPC for scintillation detector. The S14160 series achieve higher PDE (photon detection efficiency) and lower operation voltage than other MPPC to adapt for PET and radiation monitor application. They achieve small dead space in a photosensitive area with HWB (hole wire... [See More]
- Diode Applications: Detector
from Rochester Electronics
BAT15 - RF Mixer and Detector Schottky Diode [See More]
- Diode Applications: Detector; Mixer
- RoHS Compliant: RoHS
- Diode Type: Schottky; RF Diodes
from Infineon Technologies AG
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02ELS a suitable choice for mixer and detector functions in applications which... [See More]
- Diode Applications: Detector; Mixer
- VF: 0.2500 to 0.3200
- Diode Type: Schottky; RF Diodes
- IF: 110
from Hamamatsu Photonics
Low breakdown voltage type MPPC for scintillation detector. The S14160 series achieve higher PDE (photon detection efficiency) and lower operation voltage than other MPPC to adapt for PET and radiation monitor application. They achieve small dead space in a photosensitive area with HWB (hole wire... [See More]
- Diode Applications: Detector
from Rochester Electronics
RF Mixer and Detector Schottky Diode [See More]
- Diode Applications: Detector; Mixer
- RoHS Compliant: RoHS
- Diode Type: Schottky; RF Diodes
from Infineon Technologies AG
Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT 15 - 02 LRH a suitable choice for mixer and detector functions in... [See More]
- Diode Applications: Detector; Mixer
- VF: 0.2500 to 0.3200
- Diode Type: Schottky; RF Diodes
- IF: 110
from Hamamatsu Photonics
Low breakdown voltage type MPPC for scintillation detector. The S14161 series achieve higher PDE (photon detection efficiency) and lower operation voltage than other MPPC to adapt for PET and radiation monitor application. They achieve small dead space in a photosensitive area with HWB (hole wire... [See More]
- Diode Applications: Detector
from Rochester Electronics
RF Mixer and Detector Schottky Diode [See More]
- Diode Applications: Detector; Mixer
- RoHS Compliant: RoHS
- Diode Type: Schottky; RF Diodes
from Infineon Technologies AG
Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT 15 - 02 LS a suitable choice for mixer and detector functions in... [See More]
- Diode Applications: Detector; Mixer
- VF: 0.2500 to 0.3200
- Diode Type: Schottky; RF Diodes
- IF: 110
from Hamamatsu Photonics
Low breakdown voltage type MPPC for scintillation detector. The S14161 series achieve higher PDE (photon detection efficiency) and lower operation voltage than other MPPC to adapt for PET and radiation monitor application. They achieve small dead space in a photosensitive area with HWB (hole wire... [See More]
- Diode Applications: Detector
from Rochester Electronics
RF Mixer and Detector Schottky Diode [See More]
- Diode Applications: Detector; Mixer
- RoHS Compliant: RoHS
- Diode Type: Schottky; RF Diodes
from Infineon Technologies AG
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-03W a suitable choice for mixer and detector functions in applications which... [See More]
- Diode Applications: Detector; Mixer
- VF: 0.2500 to 0.3200
- Diode Type: Schottky; RF Diodes
- IF: 110
from Hamamatsu Photonics
Low breakdown voltage type MPPC for scintillation detector. The S14161 series achieve higher PDE (photon detection efficiency) and lower operation voltage than other MPPC to adapt for PET and radiation monitor application. They achieve small dead space in a photosensitive area with HWB (hole wire... [See More]
- Diode Applications: Detector
from Rochester Electronics
RF Mixer and Detector Schottky Diode [See More]
- Diode Applications: Detector; Mixer
- RoHS Compliant: RoHS
- Diode Type: Schottky; RF Diodes
from Infineon Technologies AG
This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-04R a suitable choice for mixer and detector functions in applications which... [See More]
- Diode Applications: Detector; Mixer
- VF: 0.2500
- Diode Type: Schottky; RF Diodes
- IF: 110
from Hamamatsu Photonics
Low breakdown voltage type MPPC for scintillation detector. The S14161 series achieve higher PDE (photon detection efficiency) and lower operation voltage than other MPPC to adapt for PET and radiation monitor application. They achieve small dead space in a photosensitive area with HWB (hole wire... [See More]
- Diode Applications: Detector
from Rochester Electronics
RF Mixer and Detector Schottky Diode [See More]
- Diode Applications: Detector; Mixer
- RoHS Compliant: RoHS
- Diode Type: Schottky; RF Diodes
from Infineon Technologies AG
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-04W a suitable choice for mixer and detector functions in applications which... [See More]
- Diode Applications: Detector; Mixer
- VF: 0.2500
- Diode Type: Schottky; RF Diodes
- IF: 110
from Rochester Electronics
RF Mixer and Detector Schottky Diode [See More]
- Diode Applications: Detector; Mixer
- RoHS Compliant: RoHS
- Diode Type: Schottky; RF Diodes
from Infineon Technologies AG
This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-099 a suitable choice for mixer and detector functions in applications which... [See More]
- Diode Applications: Detector; Mixer
- VF: 0.2500 to 0.3200
- Diode Type: Schottky; RF Diodes
- IF: 110
from Rochester Electronics
Schottky Barrier Diode for Detector [See More]
- Diode Applications: Detector
- RoHS Compliant: RoHS
- Diode Type: Schottky
from Infineon Technologies AG
This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-099R a suitable choice for mixer functions in applications which frequencies are... [See More]
- Diode Applications: Detector; Mixer
- VF: 0.2500 to 0.3200
- Diode Type: Schottky; RF Diodes
- IF: 110
from Infineon Technologies AG
Silicon Schottky Diodes. Summary of Features. For mixer applications in VHF/UHF range. For high-speed switching application. Pb-free (RoHS compliant) package. Potential Applications. Wireless Communications. Satellite Receivers. Base Stations. High Speed Data Networks [See More]
- Diode Applications: Detector; Mixer
- VF: 0.3400 to 0.6000
- Diode Type: Schottky; RF Diodes
- IF: 130
from Infineon Technologies AG
This Infineon RF Schottky Diode is a silicon low barrier N-type device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT24-02ELS a suitable choice for mixer and detector functions in applications with... [See More]
- Diode Applications: Detector; Mixer
- VF: 0.2500 to 0.3200
- Diode Type: Schottky; RF Diodes
- IF: 110
from Infineon Technologies AG
Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT24 - 02LS a suitable choice for mixer and detector functions in... [See More]
- Diode Applications: Detector; Mixer
- VF: 0.2500
- Diode Type: Schottky; RF Diodes
- IF: 110
from Infineon Technologies AG
Silicon Schottky Diodes. Summary of Features. Low barrier diode for detectors up to GHz frequencies. For high-speed applications. Zero bias detector diode. Pb-free (RoHS compliant) package. Potential Applications. Wireless Communications. Satellite Receivers. Base Stations. High Speed Data Networks. [See More]
- Diode Applications: Detector; Mixer
- VF: 0.1900 to 0.3000
- Diode Type: Schottky; RF Diodes
- IF: 100
from Broadcom Inc.
The HSCH-5310 / HSCH-531x medium barrier beam lead schottky diodes are ideally suited for mixer and detector applications from 1GHz to 26GHz. The HSCH-5314 and HSCH-5318 have guaranteed RF tested performance, while the other products are DC only tested. [See More]
- Diode Applications: Detector; Mixer
- VF: 0.5000
- Diode Type: Schottky; RF Diodes
- VR: 1
from SemiGen
SemiGen ’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly controlled... [See More]
- Diode Applications: Switching; Modulation; Detector; Mixer
- VF: 295
- Diode Type: Schottky
from Karl Kruse GmbH & Co. KG
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]
- Diode Applications: Detector
from Broadcom Inc.
The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. VBR=4 V, CT=0.3 pF, RD@5mA=14Ohms, Vf @ 1 mA=350 mV [See More]
- Diode Applications: Modulation; Detector
- VF: 0.2500
- Diode Type: Schottky; RF Diodes
- IF: 1
from SemiGen
SemiGen ’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly controlled... [See More]
- Diode Applications: Switching; Modulation; Detector; Mixer
- VF: 295
- Diode Type: Schottky
from Broadcom Inc.
The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. VBR=4 V, CT=0.3 pF, RD@5mA=14Ohms, Vf @ 1 mA=350 mV [See More]
- Diode Applications: Modulation; Detector
- VF: 0.2500
- Diode Type: Schottky; RF Diodes
- IF: 1
from SemiGen
SemiGen ’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly controlled... [See More]
- Diode Applications: Switching; Modulation; Detector; Mixer
- VF: 0.2500
- Diode Type: Schottky
from Broadcom Inc.
The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. VBR=4 V, CT=0.3 pF, RD@5mA=14Ohms, Vf @ 1 mA=350 mV [See More]
- Diode Applications: Modulation; Detector
- VF: 0.2500
- Diode Type: Schottky; RF Diodes
- IF: 1
from SemiGen
The SemiGen SZB900 Series of Zero Bias Schottky Detector diodes are designed for use in video detectors and power monitors eliminating the need to provide external DC bias to the diode. The choice of barrier metal and processes provide a broad selection of video impedance. Features: Low Junction... [See More]
- Diode Applications: Detector
- VF: 0.3000
- Diode Type: Schottky
from Broadcom Inc.
The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. VBR=4 V, CT=0.3 pF, RD@5mA=14Ohms, Vf @ 1 mA=350 mV [See More]
- Diode Applications: Modulation; Detector
- VF: 0.2500
- Diode Type: Schottky; RF Diodes
- IF: 1
from Broadcom Inc.
The MiniPak HMPS-282x family of Schottky diodes is the most consistent and best all-round device available, and finds applications in mixing, detecting, switching, sampling, clamping and wave shaping at frequencies up to 6 GHz. The MiniPak package offers reduced parasitics when compared to... [See More]
- Diode Applications: Switching; Detector; Mixer; Sampling, Clamping
- VF: 0.3400
- Diode Type: Schottky; RF Diodes
- IF: 1