PT Insulated Gate Bipolar Transistors (IGBT)
from DigiKey
IGBT PT 1200V 48A TO-247AD [See More]
- Structure: PT
- Package Type: TO-247; TO-247-3
- TJ: -55 to 150
- Packing Method: Tube
from DigiKey
IGBT PT 650V 180A TO-247AD [See More]
- Structure: PT
- Package Type: TO-247; TO-247-3
- TJ: -55 to 175
- Packing Method: Tube
from DigiKey
IGBT PT 600V 41A 187W Through Hole TO-247-3 [See More]
- Structure: PT
- Package Type: TO-247; TO-247-3
- TJ: -55 to 150
- Packing Method: Tube
from DigiKey
IGBT PT 1200V 41A 250W Through Hole TO-220 [K] [See More]
- Structure: PT
- Package Type: TO-220; TO-220-3
- TJ: -55 to 150
- Packing Method: Tube
from DigiKey
IGBT PT MOS 7 SIC COMBI 1200 V 2 [See More]
- Structure: PT
- Package Type: TO-247; TO-247-3
- TJ: -55 to 150
- Packing Method: Tube
from DigiKey
IGBT PT 1200V 96A 540W Through Hole T-MAX ™ [B2] [See More]
- Structure: PT
- Package Type: TO-247; TO-247-3 Variant
- TJ: -55 to 150
- Packing Method: Tube
from DigiKey
IGBT PT 600V 65A 290W Surface Mount D3PAK [See More]
- Structure: PT
- Package Type: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- TJ: -55 to 150
- Packing Method: Tube
from DigiKey
IGBT PT 1200V Through Hole TO-247AB [See More]
- Structure: PT
- Package Type: TO-247; TO-247-3
- TJ: -40 to 150
- Packing Method: Tube
from DigiKey
IGBT PT 1200V 38A 165W Surface Mount TO-263HV [See More]
- Structure: PT
- Packing Method: Tape Reel
- Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
from DigiKey
IGBT PT 1200V 9A 45W Surface Mount TO-252AA [See More]
- Structure: PT
- Packing Method: Tube
- Package Type: TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63
from DigiKey
IGBT PT 1200V 100A 350W Chassis Mount SOT-227B [See More]
- Structure: PT
- Packing Method: Tube
- Package Type: SOT-227-4, miniBLOC
from DigiKey
IGBT PT 1200V 140A Through Hole PLUS247 ™-3 [See More]
- Structure: PT
- Packing Method: Tube
- Package Type: TO-247; TO-247-3 Variant
from DigiKey
IGBT PT 1200V 22A 100W Surface Mount TO-263 (D2Pak) [See More]
- Structure: PT
- Packing Method: Tape Reel
- Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
from DigiKey
IGBT PT 1200V 60A 300W Through Hole TO-247AD [See More]
- Structure: PT
- Package Type: TO-247; TO-247-3
- TJ: -55 to 150
- Packing Method: Tube
from DigiKey
IGBT PT 600V 38A 64W Through Hole TO-220 Isolated Tab [See More]
- Structure: PT
- Package Type: TO-220; TO-220-3 Full Pack, Isolated Tab
- TJ: -55 to 150
- Packing Method: Tube
from DigiKey
IGBT PT 600V 120A 300W Through Hole TO-220 [See More]
- Structure: PT
- Package Type: TO-220; TO-220-3
- TJ: -55 to 150
- Packing Method: Tube
from DigiKey
IGBT PT 650V 250A 880W Through Hole TO-247 (IXTH) [See More]
- Structure: PT
- Package Type: TO-247; TO-247-3
- TJ: -55 to 175
- Packing Method: Tube
from DigiKey
IGBT PT 650V 38A 200W Surface Mount TO-263AA [See More]
- Structure: PT
- Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- TJ: -55 to 175
- Packing Method: Tube
from DigiKey
IGBT PT 1200V 80A 375W Surface Mount TO-263HV [See More]
- Structure: PT
- Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- TJ: -55 to 175
- Packing Method: Tube
from DigiKey
IGBT PT 1200V 106A 500W Through Hole TO-247 (IXYH) [See More]
- Structure: PT
- Package Type: TO-247; TO-247-3
- TJ: -55 to 175
- Packing Method: Tube
from DigiKey
IGBT PT 1200V 140A 600W Through Hole TO-247 (IXYH) [See More]
- Structure: PT
- Package Type: TO-247; TO-247-3
- TJ: -55 to 175
- Packing Method: Tube
from DigiKey
IGBT PT 1200V 375A 1360W Through Hole TO-264 (IXYK) [See More]
- Structure: PT
- Package Type: TO-264-3, TO-264AA
- TJ: -55 to 175
- Packing Method: Tube
from DigiKey
IGBT PT 650V 600A 2300W Through Hole PLUS264 ™ [See More]
- Structure: PT
- Package Type: TO-264-3, TO-264AA
- TJ: -55 to 175
- Packing Method: Tube
from DigiKey
IGBT PT 1200V 80A 375W Through Hole TO-220 (IXYP) [See More]
- Structure: PT
- Package Type: TO-220; TO-220-3
- TJ: -55 to 175
- Packing Method: Tube
from DigiKey
IGBT PT 1200V 140A 600W Surface Mount TO-268HV (IXYT) [See More]
- Structure: PT
- Package Type: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- TJ: -55 to 175
- Packing Method: Tube
from Littelfuse, Inc.
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated... [See More]
- Structure: PT
- VCE(on): 3
- VCES: 1200
- IC(max): 22
from Littelfuse, Inc.
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated... [See More]
- Structure: PT
- VCE(on): 3
- VCES: 1200
- IC(max): 22
from Littelfuse, Inc.
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated... [See More]
- Structure: PT
- VCE(on): 2.2
- VCES: 1200
- IC(max): 240
from Littelfuse, Inc.
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated... [See More]
- Structure: PT
- VCE(on): 1.3
- VCES: 600
- IC(max): 320
from Littelfuse, Inc.
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated... [See More]
- Structure: PT
- VCE(on): 3
- VCES: 1200
- IC(max): 22
from Littelfuse, Inc.
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated... [See More]
- Structure: PT
- VCE(on): 3
- VCES: 1000
- IC(max): 40
from Littelfuse, Inc.
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated... [See More]
- Structure: PT
- VCE(on): 2.2
- VCES: 1200
- IC(max): 240
from Littelfuse, Inc.
GenX3 ™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3 ™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new... [See More]
- Structure: PT
- VCE(on): 3.4
- VCES: 1200
- IC(max): 40
from Littelfuse, Inc.
GenX3 ™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3 ™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new... [See More]
- Structure: PT
- VCE(on): 2.5
- VCES: 600
- IC(max): 75
from Littelfuse, Inc.
GenX3 ™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3 ™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new... [See More]
- Structure: PT
- VCE(on): 2.5
- VCES: 600
- IC(max): 75
from Littelfuse, Inc.
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated... [See More]
- Structure: PT
- VCE(on): 4
- VCES: 1000
- IC(max): 50
from Littelfuse, Inc.
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated... [See More]
- Structure: PT
- VCE(on): 1.4
- VCES: 600
- IC(max): 38
from Littelfuse, Inc.
GenX3 ™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3 ™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new... [See More]
- Structure: PT
- VCE(on): 1.5
- VCES: 600
- IC(max): 75
from Littelfuse, Inc.
GenX3 ™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3 ™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new... [See More]
- Structure: PT
- VCE(on): 1.5
- VCES: 600
- IC(max): 150