N-Channel Insulated Gate Bipolar Transistors (IGBT)
Last Updated: January 31, 2025
Description
N-Channel Insulated Gate Bipolar Transistors (IGBTs) are semiconductor devices used to control electrical energy. They are designed to manage large currents and voltages efficiently, making them essential components in various power electronics applications. These devices combine the high input impedance of MOSFETs with the high current and voltage handling capabilities of bipolar transistors.
Working Principle
N-Channel IGBTs operate by utilizing a hybrid structure that combines the features of both MOSFETs and bipolar transistors. The gate voltage controls the device, allowing for fast operation similar to MOSFETs. However, they also benefit from the low on-resistance characteristics of bipolar transistors, even at high voltages. This combination makes IGBTs particularly useful in applications requiring efficient power management and high-speed switching. The conductivity modulation in IGBTs results in a small on-state voltage drop and high on-state current density, which reduces chip size and cost .
Applications
IGBTs are widely used in power electronics, particularly in applications that require efficient control of high power levels. Specific examples include:
- Electric Vehicles (EVs): IGBTs are used in the powertrain systems of electric vehicles to manage the conversion of electrical energy from the battery to the motor.
- Renewable Energy Systems: They are employed in solar inverters and wind turbine converters to efficiently convert and manage power.
- Industrial Motor Drives: IGBTs are crucial in controlling the speed and torque of industrial motors, enhancing energy efficiency and performance.
Advantages over other Insulated Gate Bipolar Transistors (IGBT)
N-Channel IGBTs offer several advantages over other types of IGBTs:
- High Current Density: They provide a high on-state current density, which allows for smaller chip sizes and reduced costs .
- Simplified Drive Circuit: The input MOS gate layout requires low driving power, simplifying the drive circuit compared to current-controlled devices .
- Large Safe Operating Area: N-Channel IGBTs have superior forward and reverse blocking capabilities, making them more reliable in high-power applications .
Limitations
Despite their advantages, N-Channel IGBTs have some limitations:
- Latch-Up Risk: Due to their internal PNPN-layered construction, they are susceptible to latch-up, a condition where the gate loses control over the collector current, potentially leading to device damage .
- Power Dissipation: Prolonged latch-up states can result in significant power dissipation, which may damage the IGBT if not properly managed .
Considerations
When considering the use of N-Channel IGBTs, several factors should be taken into account:
- Initial Costs: While IGBTs can reduce overall system costs due to their efficiency and compact size, the initial investment in high-quality IGBTs may be significant.
- Operating Expense: The efficiency of IGBTs can lead to lower operating expenses over time, particularly in high-power applications.
- Durability and Maintenance: IGBTs are generally durable, but their susceptibility to latch-up requires careful design and maintenance to prevent damage.
- Replacement Costs: The need for forced commutation in case of latch-up can increase maintenance and replacement costs if not properly managed.
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 091896-IRL3705NPBF. Packaging: Tube/Rail. Mounting: Through Hole. Technology: MOSFET. Polarity: N-Channel. Power Dissipation (Max): 170W (Tc). Family Name: IRG4PSH71KD. Categories: Discrete Semiconductor Products. Drive Voltage (Max Rds... [See More]
- Polarity: N-Channel; N-Channel
- TJ: -55 to 175
- PD: 170000
- Package Type: TO-220; SOT3; TO-220AB
from RS Components, Ltd.
IGBT TrenchStop N-Channel 650V 40A TO247 [See More]
- Polarity: N-Channel
- Package Type: TO-247; To-247
from Rochester Electronics
N-Channel Ignition IGBT, TO-263 [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: TO-263; TO-263
from RS Components, Ltd.
IGBT TrenchStop N-Channel 650V 50A TO247 [See More]
- Polarity: N-Channel
- Package Type: TO-247; To-247
from Rochester Electronics
N-Channel IGBT, 900V, 60A [See More]
- Polarity: N-Channel
- Package Type: TO-3; TO-3PL
from RS Components, Ltd.
IGBT TrenchStop N-Channel 600V 6A TO220 [See More]
- Polarity: N-Channel
- Package Type: TO-220; To-220
from Rochester Electronics
N-Channel IGBT 400V, 150A, for Strobe Flash [See More]
- Polarity: N-Channel
- Package Type: SOP8
from RS Components, Ltd.
IGBT TrenchStop N-Chan 1200V 40A TO247 [See More]
- Polarity: N-Channel
- Package Type: TO-247; To-247
from Rochester Electronics
N-Channel IGBT 400V, 150A, for Strobe Flash [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: VSON8
from RS Components, Ltd.
IGBT TrenchStop N-Channel 650V 40A TO247 [See More]
- Polarity: N-Channel
- Package Type: TO-247; To-247
from Rochester Electronics
FGI3040G2-F085C - Ignition IGBT, N-Channel Ignition, DPAK, 450V 1.3V, EcoSPARK II [See More]
- Polarity: N-Channel
- Packing Method: Tube; Tube
- Package Type: TO-220; TO-220-JDEC
from RS Components, Ltd.
IGBT TrenchStop N-Channel 600V 75A TO247 [See More]
- Polarity: N-Channel
- Package Type: TO-247; To-247
from Rochester Electronics
27A, 600V, UFS N-Channel IGBT [See More]
- Polarity: N-Channel
- Package Type: T0-262AA
from RS Components, Ltd.
IGBT TrenchStop N-Channel 650V 15A TO220 [See More]
- Polarity: N-Channel
- Package Type: TO-220; To-220
from Rochester Electronics
24A, 600V, UFS SERIES N-Channel IGBT WITH ANTI-PARALLEL HYPERFAST DIODE [See More]
- Polarity: N-Channel
- Packing Method: Tube; Tube
- Package Type: SOT-93 (T0-218) 4
from RS Components, Ltd.
IGBT TrenchStop N-Channel 600V 50A TO247 [See More]
- Polarity: N-Channel
- Package Type: TO-247; To-247
from Rochester Electronics
12A, 400V, N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE [See More]
- Polarity: N-Channel
- Package Type: TO-218
from RS Components, Ltd.
IGBT TrenchStop N-Channel 600V 30A TO247 [See More]
- Polarity: N-Channel
- Package Type: TO-247; To-247
from Rochester Electronics
N-Channel IGBT for Switching Applications, TO-204AA [See More]
- Polarity: N-Channel
- Package Type: TO-204AA
from RS Components, Ltd.
IGBT TrenchStop N-Channel 600V 15A TO220 [See More]
- Polarity: N-Channel
- Package Type: TO-220; To-220
from Rochester Electronics
IGBTs for Strobe, 400V, 150A, N-Channel [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: TSSOP8
from RS Components, Ltd.
3-phase IGBT Module + NTC 1200V 150A [See More]
- Polarity: N-Channel
- Package Type: Ag-econo3-4
from RS Components, Ltd.
IGBT Module EconoPACK2 IGBT4 1200V 100A [See More]
- Polarity: N-Channel
- Package Type: Ag-econo3-4
from RS Components, Ltd.
C series 62mm IGBT Module 1200V 600A [See More]
- Polarity: N-Channel
- Package Type: Ag-62mm-2
from RS Components, Ltd.
IGBT Module EasyPIM IGBT4 1200V 35A [See More]
- Polarity: N-Channel
- Package Type: Ag-easy2b-1
from RS Components, Ltd.
IGBT 25A 1200V Ultra Field Stop TO-247 [See More]
- Polarity: N-Channel
- Package Type: TO-247; To-247
from RS Components, Ltd.
Dual Series IGBT Module 1200V 450A [See More]
- Polarity: N-Channel
- Number of units in IC: 2
- Package Type: Simbus f
from RS Components, Ltd.
Transistor IGBT N-Ch 600V 120A TO247 [See More]
- Polarity: N-Channel
- Package Type: TO-247; To-247ab
from RS Components, Ltd.
Transistor IGBT N-Ch 600V 80A TO247 [See More]
- Polarity: N-Channel
- Package Type: TO-247; To-247
from RS Components, Ltd.
Transistor IGBT N-Ch 600V 80A TO247 [See More]
- Polarity: N-Channel
- Package Type: TO-247; To-247
from RS Components, Ltd.
Transistor IGBT N-Ch 600V 80A TO247 [See More]
- Polarity: N-Channel
- Package Type: TO-247; To-247
from RS Components, Ltd.
IGBT, Fairchild, FGAF40N60SMD [See More]
- Polarity: N-Channel
- Package Type: To-3pf
from RS Components, Ltd.
IGBT, Fairchild, HGT1S10N120BNST [See More]
- Polarity: N-Channel
- Package Type: TO-263; D2pak (to-263)
from RS Components, Ltd.
IGBT 1200V 40A Field Stop Trench TO247 [See More]
- Polarity: N-Channel
- Package Type: TO-247; To-247
from RS Components, Ltd.
IGBT Module N-CH 1.2KV 55A AG-ECONO3-3 [See More]
- Polarity: N-Channel
- Number of units in IC: 7
- Package Type: Econo3
from RS Components, Ltd.
IGBT TrenchStop N-Channel 600V 60A TO247 [See More]
- Polarity: N-Channel
- Package Type: TO-247; To-247
from Karl Kruse GmbH & Co. KG
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]
- Polarity: N-Channel
from Littelfuse, Inc.
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is... [See More]
- Polarity: N-Channel
- VCE(on): 1.3
from Solid State Devices, Inc.
SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This... [See More]
- Polarity: N-Channel
- Package Type: Milpack III
- VCE(on): 2
from Utmel Electronic Limited
FAIRCHILD SEMICONDUCTOR HGTG27N120BN IGBT Single Transistor, 72 A, 2.7 V, 500 W, 1.2 kV, TO-247, 3 Pins [See More]
- Polarity: N-Channel; N-CHANNEL
- VCE(on): 2.45
- Transistor Technology / Material: SILICON
- IC(max): 72
from Littelfuse, Inc.
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is... [See More]
- Polarity: N-Channel
- VCE(on): 1.5
from Utmel Electronic Limited
IGBT [See More]
- Polarity: N-Channel; N-CHANNEL
- TJ: -40 to 175
- Transistor Technology / Material: SILICON
- Number of units in IC: 1
from Utmel Electronic Limited
IGBT 1000V 50A 156W TO3P [See More]
- Polarity: N-Channel; N-CHANNEL
- VCE(on): 1.5
- Transistor Technology / Material: SILICON
- IC(max): 50
from Utmel Electronic Limited
IGBT 1200V 16A 138W TO220-3 [See More]
- Polarity: N-Channel; N-CHANNEL
- IC(max): 16
- Transistor Technology / Material: SILICON
- PD: 138000
from Utmel Electronic Limited
IGBT 1200V 22A 100W TO220 [See More]
- Polarity: N-Channel; N-CHANNEL
- IC(max): 22
- Transistor Technology / Material: SILICON
- PD: 100000
from Utmel Electronic Limited
IGBT 1200V 30A 150W TO247AD [See More]
- Polarity: N-Channel; N-CHANNEL
- IC(max): 30
- Transistor Technology / Material: SILICON
- tf: 190
from Utmel Electronic Limited
IGBT 1200V 40A 288W TO247 [See More]
- Polarity: N-Channel; N-CHANNEL
- IC(max): 40
- Transistor Technology / Material: SILICON
- PD: 288000
from Utmel Electronic Limited
IGBT 1200V 41A 160W TO247AC [See More]
- Polarity: N-Channel; N-CHANNEL
- VCE(on): 2.43
- Transistor Technology / Material: SILICON
- IC(max): 41
from Utmel Electronic Limited
IGBT 1200V 46A 313W TO247-3 [See More]
- Polarity: N-Channel; N-CHANNEL
- TJ: -55 to 150
- Transistor Technology / Material: SILICON
- Packing Method: Tube; Tube
from Utmel Electronic Limited
IGBT 1200V 60A 300W TO247AD [See More]
- Polarity: N-Channel; N-CHANNEL
- VCE(on): 2.4
- Transistor Technology / Material: SILICON
- IC(max): 60
from Utmel Electronic Limited
IGBT 1200V 80A 555W TO247-3 [See More]
- Polarity: N-Channel; N-CHANNEL
- IC(max): 80
- VCE(on): 1.8
- PD: 555000
from Utmel Electronic Limited
IGBT 1200V 9.6A 62.5W TO263-3 [See More]
- Polarity: N-Channel; N-CHANNEL
- TJ: -40 to 150
- Transistor Technology / Material: SILICON
- Packing Method: Tape Reel; Tape & Reel (TR)
from Utmel Electronic Limited
Igbt 20A, 350V, N-Channel / Tr Rohs Compliant: Yes [See More]
- Polarity: N-Channel; N-CHANNEL
- TJ: -55 to 175
- Transistor Technology / Material: SILICON
- Packing Method: Tape Reel; Tape & Reel (TR)
from Utmel Electronic Limited
IGBT 300V 170A 330W TO3P [See More]
- Polarity: N-Channel; N-CHANNEL
- IC(max): 170
- Transistor Technology / Material: SILICON
- PD: 330000
from Utmel Electronic Limited
IGBT 360V 44A 187W D2PAK [See More]
- Polarity: N-Channel; N-CHANNEL
- IC(max): 44
- Transistor Technology / Material: SILICON
- tr: 7000
from Utmel Electronic Limited
IGBT 440V 20A 125W DPAK [See More]
- Polarity: N-Channel; N-CHANNEL
- TJ: -55 to 175
- Transistor Technology / Material: SILICON
- Packing Method: Tape Reel; Tape & Reel (TR)
from Utmel Electronic Limited
IGBT 600V 10A 25W TP220FP [See More]
- Polarity: N-Channel; N-CHANNEL
- VCE(on): 1.45
- Transistor Technology / Material: SILICON
- IC(max): 10
from Utmel Electronic Limited
IGBT 600V 110A 284W TO247 [See More]
- Polarity: N-Channel; N-CHANNEL
- VCE(on): 1.15
- Transistor Technology / Material: SILICON
- IC(max): 110
from Utmel Electronic Limited
IGBT 600V 12A 100W TO252-3 [See More]
- Polarity: N-Channel; N-CHANNEL
- IC(max): 12
- Transistor Technology / Material: SILICON
- TJ: -40 to 175
from Utmel Electronic Limited
IGBT 600V 15A 62W DPAK [See More]
- Polarity: N-Channel; N-CHANNEL
- IC(max): 15
- Transistor Technology / Material: SILICON
- PD: 62000
from Utmel Electronic Limited
IGBT 600V 17A 45W TO220FP [See More]
- Polarity: N-Channel; N-CHANNEL
- VCE(on): 1.95
- Transistor Technology / Material: SILICON
- IC(max): 17
from Utmel Electronic Limited
IGBT 600V 200A 780W PLUS247 [See More]
- Polarity: N-Channel; N-CHANNEL
- VCE(on): 1.2
- Transistor Technology / Material: SILICON
- IC(max): 200
from Utmel Electronic Limited
IGBT 600V 20A 101W TO220AB [See More]
- Polarity: N-Channel; N-CHANNEL
- VCE(on): 1.6
- Transistor Technology / Material: SILICON
- IC(max): 20
from Utmel Electronic Limited
IGBT 600V 20A 65W TO220 [See More]
- Polarity: N-Channel; N-CHANNEL
- VCE(on): 1.9
- Transistor Technology / Material: SILICON
- IC(max): 20
from Utmel Electronic Limited
IGBT 600V 40A 130W D2PAK [See More]
- Polarity: N-Channel; N-CHANNEL
- IC(max): 40
- Transistor Technology / Material: SILICON
- PD: 130000