Shipping Tube / Stick Magazine Insulated Gate Bipolar Transistors (IGBT)

Manufacturer: Microchip Technology. Win Source Part Number: 1324937-APT150GN60J. Category: Discrete Semiconductor Products >Transistors - IGBTs - Modules. Packaging: Tube. Standard Package: 1. Mounting: Chassis Mount. Power - Max: 536 W. Configuration: Single. Input: Standard. IGBT Type: Trench... [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 175

• V_CES: 600
• Package Type: SOT3; ISOTOP

600 V, 15 A IGBT Discrete in TO220 package. Hard-switching 600 V, 15 A single TRENCHSTOP ™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with... [See More]

• Packing Method: Tube; TUBE
• Switching Speed: 2 to 20

• V_CE(on): 600
• t_r: 11

Buffer or Inverter Based IGBT/MOSFET Driver, 4A, CMOS, PDSO8 [See More]

• Packing Method: Tube; Tube

• Package Type: SOIC8

IGBT TRENCH FS 600V 40A TO-247 [See More]

• Packing Method: Tube
• Package Type: TO-247; TO-247-3

• T_J: -55 to 150
• Structure: Trench Field Stop

Manufacturer: Vishay Semiconductor Opto Division. Win Source Part Number: 1279690-VO3120. Packaging: Tube. Mounting Style: Through Hole. Approvals: cUR, UR. Technology: Optical Coupling. Current - Output High, Low: 2.5A, 2.5A. Voltage - Isolation: 5300Vrms. Current - Peak Output: 2.5A. Categories:... [See More]

• Packing Method: Tube; Tube
• Package Type: SOT3

• T_J: -40 to 110

600 V, 20 A IGBT Discrete in TO-247 package. High speed 600 V, 20 A single TRENCHSTOP ™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. [See More]

• Packing Method: Tube; TUBE
• Switching Speed: 20 to 100

• V_CE(on): 600
• t_r: 23

AEC 101 Qualified, 650V, 40A Fieldstop 4 trench IGBT [See More]

• Packing Method: Tube; Tube

• Package Type: TO-247; TO-247-3LD

IGBT 2500V 75A TO-264AA [See More]

• Packing Method: Tube

• Package Type: TO-264-3, TO-264AA

Manufacturer: Fairchild/ON Semiconductor. Win Source Part Number: 197246-10N120BND. Packaging: Tube/Rail. Mounting: Through Hole. Reverse Recovery Time (trr): 70ns. IGBT Type: NPT. Input Type: Standard. Gate Charge: 100nC. Categories: Discrete Semiconductor Products. Status: Not For New Designs. [See More]

• Packing Method: Rail; Tube; Tube/Rail
• P_D: 298000

• V_CE(on): 2.7
• T_J: -55 to 150

600 V, 30 A IGBT Discrete in TO-247 package. High speed 600 V, 30 A single TRENCHSTOP ™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. [See More]

• Packing Method: Tube; TUBE
• Switching Speed: 20 to 100

• V_CE(on): 600
• t_r: 30

Automotive IGBT Discretes [See More]

• Packing Method: Tube; Tube

• Package Type: TO-263; TO-263-3, D2PAK

IGBT PT 1200V 48A TO-247AD [See More]

• Packing Method: Tube
• Package Type: TO-247; TO-247-3

• T_J: -55 to 150
• Structure: PT

Manufacturer: Fairchild/ON Semiconductor. Win Source Part Number: 052105-11N120CND. Packaging: Tube/Rail. Mounting: Through Hole. Reverse Recovery Time (trr): 70ns. IGBT Type: NPT. Input Type: Standard. Gate Charge: 100nC. Categories: Discrete Semiconductor Products. Status: Not For New Designs. [See More]

• Packing Method: Rail; Tube; Tube/Rail
• P_D: 298000

• V_CE(on): 2.4
• T_J: -55 to 150

To further enhance the best-in-class performance of the TRENCHSTOP ™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP ™ 5 IGBT... [See More]

• Packing Method: Tube; TUBE
• Switching Speed: 30 to 100

• V_CE(on): 650
• t_r: 9

Automotive IGBT Discretes [See More]

• Packing Method: Tube; Tube

• Package Type: SUPER220

IGBT 2500V 5.5A TO-268AA [See More]

• Packing Method: Tube
• Package Type: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

• T_J: -55 to 150

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1016960-AOK10B60D. Packaging: Tube/Rail. Mounting: Through Hole. Reverse Recovery Time (trr): 105ns. Input Type: Standard. Gate Charge: 17.4nC. Categories: Discrete Semiconductor Products. Status: Active. Temperature Range -... [See More]

• Packing Method: Rail; Tube; Tube/Rail
• P_D: 163000

• V_CE(on): 1.8
• T_J: -55 to 175

1350 V, 20 A IGBT Discrete with anti-parallel diode in TO-247 package. The Reverse Conducting R5 1350 V, 20 A RC-H5 IGBTs with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for the demanding requirements of Induction Cooking applications. With a... [See More]

• Packing Method: Tube; TUBE
• Switching Speed: 8 to 60

• V_CE(on): 1350
• t_f: 50

FGA180N33ATD - IGBT-Single 330V 180A 390W (Tc) TO-3P-3 Tube [See More]

• Packing Method: Tube; Tube

• Package Type: TO-3; TO-3PN-3

IGBT PT 650V 180A TO-247AD [See More]

• Packing Method: Tube
• Package Type: TO-247; TO-247-3

• T_J: -55 to 175
• Structure: PT

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1016962-AOK15B60D. Packaging: Tube/Rail. Mounting: Through Hole. Reverse Recovery Time (trr): 196ns. Input Type: Standard. Gate Charge: 25.4nC. Categories: Discrete Semiconductor Products. Status: Active. Temperature Range -... [See More]

• Packing Method: Rail; Tube; Tube/Rail
• P_D: 167000

• V_CE(on): 1.8
• T_J: -55 to 175

650 V, 40 A IGBT with monolithically integrated diode in TO-247 package. Reverse Conducting R6 650 V, 40 A IGBT in TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements of induction heating applications using half-bridge resonant topology. Thanks to best... [See More]

• Packing Method: Tube; TUBE
• Switching Speed: 20 to 75

• V_CE(on): 650
• t_r: 19

IGBT, 650 V, 40 A Field Stop Trench 650 V, 40 A Field Stop Trench IGBT [See More]

• Packing Method: Tube; Tube

• Package Type: TO-3; TO-3PF-3L

IGBT 650V 50A TO-263AA [See More]

• Packing Method: Tube
• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

• T_J: -55 to 175

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1016965-AOK20B135D1. Packaging: Tube/Rail. Mounting: Through Hole. Input Type: Standard. Gate Charge: 66nC. Categories: Discrete Semiconductor Products. Status: Active. Temperature Range - Operating: -55 °C to 175... [See More]

• Packing Method: Rail; Tube; Tube/Rail
• P_D: 340000

• V_CE(on): 1.8
• T_J: -55 to 175

650 V, 8 A IGBT with anti-parallel diode in TO-220 package. High Speed 650 V, 8 A hard-switching IGBT TRENCHSTOP ™ 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-220 package, is defined as "best-in-class" IGBT. Summary of Features. 650 V breakthrough voltage. Compared to... [See More]

• Packing Method: Tube; TUBE
• Switching Speed: 30 to 100

• V_CE(on): 650
• t_r: 5

IGBT, 650V, 40A Field Stop Trench [See More]

• Packing Method: Tube; Tube

• Package Type: TO-247; TO-247 3L

IGBT 4500V 23A ISOPLUS I4-PAC [See More]

• Packing Method: Tube
• Package Type: ISOPLUSi5-PAK™

• T_J: -55 to 150

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 805826-AOK20B135E1. Packaging: Tube. Mounting Style: Through Hole. Power - Max: 250W. Current - Collector Pulsed (Icm): 80A. Switching Energy: 800 μJ (off). Input Type: Standard. Gate Charge: 58nC. Test Condition: 600V,... [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 175

• V_CES: 1350
• Package Type: TO-247; SOT3

600 V, 30 A IGBT with anti-parallel diode in TO-247 package. Hard-switching 600 V, 30 A high speed TRENCHSTOP ™ IGBT3 co-packed with Rapid 1 fast and soft anti-parallel diode in a TO-247 advanced isolation package for a best cost efficient solution. Summary of Features. TRENCHSTOP ™... [See More]

• Packing Method: Tube; TUBE
• Switching Speed: 18 to 60

• V_CE(on): 600
• t_r: 34

FGI3040G2-F085C - Ignition IGBT, N-Channel Ignition, DPAK, 450V 1.3V, EcoSPARK II [See More]

• Packing Method: Tube; Tube
• Package Type: TO-220; TO-220-JDEC

• Polarity: N-Channel

IGBT NPT 1200V 25A 156W Through Hole TO-247 [B] [See More]

• Packing Method: Tube
• Package Type: TO-247; TO-247-3

• T_J: -55 to 150
• Structure: NPT

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1003003-AOK20B60D1. Packaging: Tube/Rail. Mounting: Through Hole. Reverse Recovery Time (trr): 107ns. Input Type: Standard. Gate Charge: 24.6nC. Categories: Discrete Semiconductor Products. Status: Active. Temperature Range -... [See More]

• Packing Method: Rail; Tube; Tube/Rail
• P_D: 167000

• V_CE(on): 2.4
• T_J: -55 to 175

650 V, 40 A IGBT in TO-247 advanced isolation package. Hard-switching 650 V, 40 A TRENCHSTOP ™ 5 H5 IGBT discrete in TO-247 advanced isolation package is the highest efficiency discrete IGBT technology on the market ideally suited for customers who are looking for outstanding efficiency and... [See More]

• Packing Method: Tube; TUBE
• Switching Speed: 30 to 100

• V_CE(on): 650
• t_r: 29

600V, SMPS IGBT [See More]

• Packing Method: Tube; Tube

• Package Type: TO-220; TO-220-3

IGBT NPT 1200V 25A 156W Through Hole TO-220 [K] [See More]

• Packing Method: Tube
• Package Type: TO-220; TO-220-3

• T_J: -55 to 150
• Structure: NPT

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 804764-AOK20B65M2. Packaging: Tube. Mounting Style: Through Hole. Power - Max: 227W. Reverse Recovery Time (trr): 292ns. Current - Collector Pulsed (Icm): 60A. Switching Energy: 580 μJ (on), 280 μJ (off). Input... [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 175

• V_CES: 650
• Package Type: TO-247; SOT3

600 V, 120 A IGBT discrete with anti-parallel diode in TO-247PLUS package. Hard switching 600 V, 120 A TRENCHSTOP ™ IGBT technology in a TO-247PLUS package for higher current capability. The TO-247PLUS package allows up to 120 A in 600 V with the same outer dimensions as the industry standard... [See More]

• Packing Method: Tube; TUBE
• Switching Speed: 2 to 20

• V_CE(on): 600
• t_r: 75

Discrete IGBT without Anti-Parallel Diode [See More]

• Packing Method: Tube; Tube

• Package Type: FULLPAK220

IGBT Trench Field Stop 600V 40A 136W Through Hole TO-247-3 [See More]

• Packing Method: Tube
• Package Type: TO-247; TO-247-3

• T_J: -55 to 175
• Structure: Trench Field Stop

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1016972-AOK30B135W1. Packaging: Tube/Rail. Mounting: Through Hole. Input Type: Standard. Gate Charge: 62nC. Categories: Discrete Semiconductor Products. Status: Active. Temperature Range - Operating: -55 °C to 175... [See More]

• Packing Method: Rail; Tube; Tube/Rail
• P_D: 340000

• V_CE(on): 2.2
• T_J: -55 to 175

1200 V, 8 A IGBT7 S7 with anti-parallel diode in TO-247 package. Hard-switching 1200 V, 8 A TRENCHSTOP ™ IGBT7 S7 discrete in TO-247 package with EC7 diode inside. It offers low VCEsat to achieve very low conduction losses in target applications and the co-packed very soft and fast emitter... [See More]

• Packing Method: Tube; TUBE
• Switching Speed: 2 to 20

• V_CE(on): 1200
• t_r: 15

IKZ75N65 - Discrete IGBT with Anti-Parallel Diode [See More]

• Packing Method: Tube; Tube

• Package Type: PG-TO247-4

IGBT Trench Field Stop 600V 40A 136W Surface Mount D3PAK [See More]

• Packing Method: Tube
• Package Type: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

• T_J: -55 to 175
• Structure: Trench Field Stop

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 768554-AOK40B60D1. Series: Alpha IGBT. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-247-3. Power - Max: 278W. Reverse Recovery Time (trr): 127ns. [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 150

• V_CES: 600
• Package Type: TO-247; SOT3

1200 V, 15 A IGBT with anti-parallel diode in TO-247 package. Hard-switching 1200 V, 15 A high speed TRENCHSTOP ™ IGBT6 in a TO-247 package co-packed with a very soft and fast recovery anti-parallel diode is optimized for the best compromise between switching and conduction losses. Summary of... [See More]

• Packing Method: Tube; TUBE
• t_r: 29

• Switching Speed: 18 to 60
• t_f: 27

Buffer or Inverter Based IGBT/MOSFET Driver, 0.5A, CMOS, PQCC32 [See More]

• Packing Method: Tube; Tube

• Package Type: PLCC44

IGBT PT 1200V 96A 540W Through Hole T-MAX ™ [B2] [See More]

• Packing Method: Tube
• Package Type: TO-247; TO-247-3 Variant

• T_J: -55 to 150
• Structure: PT

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1016975-AOK40B65H1. Packaging: Tube/Rail. Mounting: Through Hole. Reverse Recovery Time (trr): 346ns. Input Type: Standard. Gate Charge: 63nC. Categories: Discrete Semiconductor Products. Status: Active. Temperature Range -... [See More]

• Packing Method: Rail; Tube; Tube/Rail
• P_D: 300000

• V_CE(on): 2.4
• T_J: -55 to 175

650 V, 20 A IGBT with anti-parallel diode in TO-247 package. Hard-switching 650 V, 20 A TRENCHSTOP ™ IGBT7 discrete in TO-247 package with soft EC7 diode inside. This price performance optimized range has premium controllability for the better EMI while switching losses are lower than the... [See More]

• Packing Method: Tube; TUBE
• Switching Speed: 5 to 40

• V_CE(on): 650
• t_r: 6

Half Bridge Based IGBT/MOSFET Driver [See More]

• Packing Method: Tube; Tube

• Package Type: SOIC14

IGBT TRENCH FS 600V 75A TO-247L [See More]

• Packing Method: Tube
• Package Type: TO-247; TO-247-3

• T_J: -40 to 175
• Structure: Trench Field Stop

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 804442-AOK40B65M3. Packaging: Tube. Mounting Style: Through Hole. Power - Max: 300W. Reverse Recovery Time (trr): 365ns. Current - Collector Pulsed (Icm): 120A. Switching Energy: 1.3mJ (on), 500 μJ (off). Input Type:... [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 175

• V_CES: 650
• Package Type: TO-247; SOT3

650 V, 75 A IGBT Discrete with CoolSiC ™ diode. 650 V, 75 A TRENCHSTOP ™ 5 H5 IGBT co-packed with half-rated 6th generation CoolSiC ™ Schottky barrier diode in TO-247-3 package. The ultra-fast 650 V hard-switching TRENCHSTOP ™ 5 H5 IGBT benefits very low switching losses at... [See More]

• Packing Method: Tube; TUBE
• Switching Speed: 40 to 100

• V_CE(on): 650
• t_r: 9

Half Bridge Based IGBT/MOSFET Driver [See More]

• Packing Method: Tube; Tube

• Package Type: PDIP8

IGBT Trench Field Stop 650V 91A 278W Through Hole TO-247-3 [See More]

• Packing Method: Tube
• Package Type: TO-247; TO-247-3

• T_J: -55 to 150
• Structure: Trench Field Stop

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 808749-AOK50B65M2. Packaging: Tube. Mounting Style: Through Hole. Power - Max: 500W. Reverse Recovery Time (trr): 327ns. Current - Collector Pulsed (Icm): 150A. Switching Energy: 2.09mJ (on), 1.03mJ (off). Input Type:... [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 175

• V_CES: 650
• Package Type: TO-247; SOT3

650 V, 20 A IGBT with anti-parallel diode in TO-247-3-HCC package. High speed 650 V, 20 A reverse conducting TRENCHSTOP ™ 5 WR6 IGBT in high creepage and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent... [See More]

• Packing Method: Tube; TUBE
• Switching Speed: 20 to 75

• V_CE(on): 650
• t_r: 13

Buffer or Inverter Based IGBT/MOSFET Driver [See More]

• Packing Method: Tube; Tube

• Package Type: SSOP32

IGBT TRENCH FS 650V 91A TO-247-3 [See More]

• Packing Method: Tube
• Package Type: TO-247; TO-247-3

• T_J: 175
• Structure: Trench Field Stop

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1016979-AOK60B60D1. Packaging: Tube/Rail. Mounting: Through Hole. Reverse Recovery Time (trr): 137ns. Input Type: Standard. Gate Charge: 75nC. Categories: Discrete Semiconductor Products. Status: Active. Temperature Range -... [See More]

• Packing Method: Rail; Tube; Tube/Rail
• P_D: 417000

• V_CE(on): 2.4
• T_J: -55 to 150

1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS package. Hard-switching 1200 V, 50 A HighSpeed 3 H3 in TO-247PLUS 4pin package. Higher current capability, improved thermal behaviour, extended C-E creepage are the key features of the TO-247PLUS package. The 4pin package configuration... [See More]

• Packing Method: Tube; TUBE
• Switching Speed: 18 to 60

• V_CE(on): 1200
• t_r: 29

High Speed IGBT [See More]

• Packing Method: Tube; Tube

• Package Type: TO-220; TO-220-3FP

IGBT [See More]

• Packing Method: Tube
• Package Type: i4-Pac™-4, Isolated

• T_J: -55 to 150

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 812211-AOK75B60D1. Packaging: Tube. Mounting Style: Through Hole. Power - Max: 500W. Reverse Recovery Time (trr): 147ns. Current - Collector Pulsed (Icm): 290A. Switching Energy: 3.7mJ (on), 1.3mJ (off). Input Type: Standard. [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 150

• V_CES: 600
• Package Type: TO-247; SOT3

1200 V, 40 A IGBT with anti-parallel diode in TO-247-4 package. Hard-switching 1200 V, 40 A high speed TRENCHSTOP ™ IGBT6 in a TO-247PLUS 4pin package co-packed with a soft and fast recovery full current anti-parallel diode is the responding to the market requirements for high efficiency and... [See More]

• Packing Method: Tube; TUBE
• Switching Speed: 10 to 50

• V_CE(on): 1200
• t_r: 27

Buffer or Inverter Based IGBT/MOSFET Driver, 4A, PDSO16 [See More]

• Packing Method: Tube; Tube

• Package Type: SOIC16

IGBT PT 1200V Through Hole TO-247AB [See More]

• Packing Method: Tube
• Package Type: TO-247; TO-247-3

• T_J: -40 to 150
• Structure: PT

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1144956-AOKS30B60D1. Packaging: Tube. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 96A. Switching Energy: 1.1mJ (on), 240 μJ (off). Input Type: Standard. Gate Charge: 34nC. Test Condition: 400V, 30A,... [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 150

• V_CES: 600
• Package Type: TO-247; SOT3

650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode. 650 V, 50A TRENCHSTOP ™ 5 S5 IGBT co-packed with full-rated 6th generation Silicon Carbide CoolSiC ™ Schottky barrier diode in Kelvin-emitter TO-247-4 package. The 650 V hard-switching TRENCHSTOP ™ 5 S5 IGBT technology... [See More]

• Packing Method: Tube; TUBE
• Switching Speed: 10 to 30

• V_CE(on): 650
• t_r: 9

Buffer or Inverter Based IGBT/MOSFET Driver, 4A, PDSO14 [See More]

• Packing Method: Tube; Tube

• Package Type: RQFN14

IGBT Trench 1200V 72A 390W Through Hole ISO247 [See More]

• Packing Method: Tube
• Structure: Trench

• Package Type: TO-247; TO-247-3

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017162-AOT10B60D. Packaging: Tube/Rail. Mounting: Through Hole. Reverse Recovery Time (trr): 105ns. Input Type: Standard. Gate Charge: 17.4nC. Categories: Discrete Semiconductor Products. Status: Active. Temperature Range -... [See More]

• Packing Method: Rail; Tube; Tube/Rail
• P_D: 163000

• V_CE(on): 1.8
• T_J: -55 to 175

Hybrid Power Discrete with SiC power technology in THD package for e-Mobility applications. Best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. Therefore, Infineon has developed a hybrid of 650V TRENCHSTOP ™ 5 AUTO... [See More]

• Packing Method: Tube; TUBE
• t_f: 13

• t_r: 12
• Package Type: TO-247; PG-TO247-3

SI8281CD - Automotive Isolated SiC and IGBT driver with integrated dc-dc [See More]

• Packing Method: Tube; Tube

• Package Type: SOIC20

IGBT PT 1200V 38A 165W Surface Mount TO-263HV [See More]

• Packing Method: Tube
• Structure: PT

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 768565-AOT10B65M1. Series: Alpha IGBT. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: -55 °C ~ 175 °C (TJ). Package: TO-220-3. Power - Max: 150W. Reverse Recovery Time (trr): 262ns. [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 175

• V_CES: 650
• Package Type: TO-220; SOT3

The power module implements the second generation CoolSiC ™ Automotive MOSFET 1200 V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural vehicles. Summary of Features. VDSS = 1200 V. IDN =... [See More]

• Packing Method: Tube; TUBE
• Transistor Grade / Operating Range: Automotive; eMobility ; Hybrid Electric Vehicles ; Drives ; CAV ; Aircon

• Package Type: PG-MDIP-11

SI8283BC - Isolated SiC and IGBT driver with feature-rich integrated dc-dc [See More]

• Packing Method: Tube; Tube

• Package Type: SOIC24

IGBT PT 1200V 9A 45W Surface Mount TO-252AA [See More]

• Packing Method: Tube
• Structure: PT

• Package Type: TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 803605-AOT10B65M2. Packaging: Tube. Mounting Style: Through Hole. Power - Max: 150W. Reverse Recovery Time (trr): 262ns. Current - Collector Pulsed (Icm): 30A. Switching Energy: 180 μJ (on), 130 μJ (off). Input... [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 175

• V_CES: 650
• Package Type: TO-220; SOT3

HybridPACKTM DSC S1 700 V, 400 A half-bridge TRENCHSTOPTM IGBT3 including matching diodes with enhanced softness is a very compact IGBT molded module targeting hybrid and electric vehicles. Summary of Features. Increased blocking Voltage capability to 700 V. Integrated current sensor. Integrated... [See More]

• Packing Method: Tube; TUBE
• V_CE(on): 1.65

• V_CES: 700
• I_C(max): 400

IGBT PT 1200V 100A 350W Chassis Mount SOT-227B [See More]

• Packing Method: Tube
• Structure: PT

• Package Type: SOT-227-4, miniBLOC

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1145006-AOT15B60D. Series: Alpha IGBT. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: -55 °C ~ 175 °C (TJ). Package: TO-220-3. Power - Max: 167W. Reverse Recovery Time (trr): 196ns. [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 175

• V_CES: 600
• Package Type: TO-220; SOT3

The HybridPACKTM DSC S2 is a very compact half-bridge module targeting Hybrid- and Electric Vehicle applications. The module is based on Infineon ’s long-term experience developing IGBT power modules and implements the EDT2 IGBT generation. The innovative and small package is designed for... [See More]

• Packing Method: Tube; TUBE
• V_CE(on): 1.2

• V_CES: 750
• I_C(max): 900

IGBT 3000V 86A 357W Through Hole ISOPLUS i4-PAC ™ [See More]

• Packing Method: Tube
• Package Type: i4-Pac™-5 (3 Leads)

• T_J: -55 to 150

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 768567-AOT15B65M1. Series: Alpha IGBT. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: -55 °C ~ 175 °C (TJ). Package: TO-220-3. Power - Max: 214W. Reverse Recovery Time (trr): 317ns. [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 175

• V_CES: 650
• Package Type: TO-220; SOT3

HybridPACKTM DSC L 700 V, 200 A six-pack TRENCHSTOPTM IGBT3 including matching diodes with enhanced softness is a very compact IGBT molded module targeting hybrid and electric vehicles. Summary of Features. Increased blocking voltage capability to 700 V. Integrated current sensor. Low inductive... [See More]

• Packing Method: Tube; TUBE
• V_CE(on): 1.45

• V_CES: 700
• I_C(max): 200

IGBT 3000V 38A 200W Through Hole TO-247HV (IXBH) [See More]

• Packing Method: Tube
• Package Type: TO-247; TO-247-3

• T_J: -55 to 150

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017227-AOT5B60D. Packaging: Tube/Rail. Mounting: Through Hole. Reverse Recovery Time (trr): 98ns. Input Type: Standard. Gate Charge: 9.4nC. Categories: Discrete Semiconductor Products. Status: Active. Temperature Range -... [See More]

• Packing Method: Rail; Tube; Tube/Rail
• P_D: 82400

• V_CE(on): 1.8
• T_J: -55 to 175

The automotive IGBT discrete AIKQ120N75CP2 is an EDT2 IGBT with a co-packed diode in the TO247PLUS package. The 750V EDT technology significantly improves energy efficiency and cooling efforts for high voltage automotive applications by enabling battery voltages up to 470V and safe fast switching... [See More]

• Packing Method: Tube; TUBE
• Switching Speed: 7 to 15

• V_CE(on): 750
• t_r: 69

IGBT PT 1200V 140A Through Hole PLUS247 ™-3 [See More]

• Packing Method: Tube
• Structure: PT

• Package Type: TO-247; TO-247-3 Variant

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1145031-AOT5B65M1. Packaging: Tube. Mounting Style: Through Hole. Reverse Recovery Time (trr): 195ns. Current - Collector Pulsed (Icm): 15A. Switching Energy: 80 μJ (on), 70 μJ (off). Input Type: Standard. Gate... [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 175

• V_CES: 650
• Package Type: TO-220; SOT3

The automotive IGBT discrete AIKQ200N75CP2 is an EDT2 IGBT with a co-packed diode in the TO247PLUS package. The 750V EDT technology significantly improves energy efficiency and cooling efforts for high voltage automotive applications by enabling battery voltages up to 470V and safe fast switching... [See More]

• Packing Method: Tube; TUBE
• Switching Speed: 7 to 15

• V_CE(on): 750
• t_r: 120

Discrete Semiconductor Products - Transistors - IGBTs - Single [See More]

• Packing Method: Tube; Through Hole

• T_J: -55 to 175

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. [See More]

• Packing Method: Tube
• T_J: -55 to 175

• P_D: 111000
• Package Type: TO-247; TO-247GE

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. [See More]

• Packing Method: Tube
• T_J: -55 to 175

• P_D: 54000
• Transistor Grade / Operating Range: Commercial

1200V/15A RC IGBT FSII TO [See More]

• Packing Method: Tube; Tube
• P_D: 333000

• I_C(max): 30
• T_J: -40 to 175

IGBT WITH SIC COPACK DIODE IGBT [See More]

• Packing Method: Tube; Tube

• Package Type: Automotive

Discrete Semiconductor Products - Transistors - IGBTs - Single [See More]

• Packing Method: Tube; Through Hole

• T_J: -55 to 150

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. [See More]

• Packing Method: Tube
• T_J: -55 to 175

• P_D: 54000
• Package Type: TO-3PFM

650V FS4 TRENCH IGBT [See More]

• Packing Method: Tube; Tube

• T_J: -55 to 175

SIC_DISCRETE [See More]

• Packing Method: Tube; Tube

• Package Type: Automotive

IGBT STD 600V 60A TO-220AB [See More]

• Packing Method: Tube; Tube

The RGS30TSX2HR is a 10 μs SCSOA guaranteed IGBT, suitable for Heater of Automotive. The RGS series delivers low conduction loss that contributes to reducing size and to improving efficiency of applications. This product complies AEC-Q101 qualification. [See More]

• Packing Method: Tube
• T_J: -55 to 175

• P_D: 267000
• Package Type: TO-247; TO-247N

FAIRCHILD SEMICONDUCTOR FGL60N100BNTDIGBT Single Transistor, 60 A, 2.9 V, 180 W, 1 kV, TO-264, 3 Pins [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: NPN
• V_CE(on): 1.5

IGBT 600V TO247-3 [See More]

• Packing Method: Tube; Tube

• Package Type: Automotive

FS3 T TO247 40A 650V AUTO [See More]

• Packing Method: Tube; Tube
• Package Type: Automotive

• T_J: -55 to 175

RGT20TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder. [See More]

• Packing Method: Tube
• T_J: -55 to 175

• P_D: 25000
• Package Type: TO-220; TO-220NFM

FAIRCHILD SEMICONDUCTOR HGTG27N120BN IGBT Single Transistor, 72 A, 2.7 V, 500 W, 1.2 kV, TO-247, 3 Pins [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: N-Channel; N-CHANNEL
• V_CE(on): 2.45

IGBT 600V 20A TRENCH TO-247N [See More]

• Packing Method: Tube; Tube

IGBT 650V TO247-3 [See More]

• Packing Method: Tube; Tube
• Package Type: Automotive

• T_J: -40 to 175

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. [See More]

• Packing Method: Tube
• T_J: -55 to 175

• P_D: 133000
• Package Type: TO-262

IC PREDRIVER IGBT IGNITION 8DIP [See More]

• Packing Method: Tube; Tube

• T_J: -40 to 150

IGBT 600V-X TO247 TUBE 0.45K [See More]

• Packing Method: Tube; Tube

IC DISCRETE 600V TO220-3 [See More]

• Packing Method: Tube; Tube

BM63373S-VA/-VC is an Intelligent Power Module composed of gate drivers, bootstrap diodes, IGBTs, fly wheel diodes. [See More]

• Packing Method: Tube
• Package Type: HSDIP25

• T_J: -40 to 125
• Transistor Grade / Operating Range: Commercial

IGBT 1000V 50A 156W TO3P [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: N-Channel; N-CHANNEL
• V_CE(on): 1.5

1200V 40A FSIII IGBT LOW VCESAT [See More]

• Packing Method: Tube; Tube

IC DISCRETE 600V TO247-3 [See More]

• Packing Method: Tube; Tube

• Package Type: Automotive

BM63373S-VA/-VC is an Intelligent Power Module composed of gate drivers, bootstrap diodes, IGBTs, fly wheel diodes. [See More]

• Packing Method: Tube
• Package Type: HSDIP25VC

• T_J: -40 to 125
• Transistor Grade / Operating Range: Commercial

IGBT 1200V 16A 138W TO220-3 [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: N-Channel; N-CHANNEL
• I_C(max): 16

IGBT MODULE 100A SINGLE 600V LOW [See More]

• Packing Method: Tube; Tube

IGBT 600V 20A 163W TO247 [See More]

• Packing Method: Tube; Tube

IGBT 1200V 22A 100W TO220 [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: N-Channel; N-CHANNEL
• I_C(max): 22

IGBT MODULE 75A SINGLE 1200V HIG [See More]

• Packing Method: Tube; Tube

IGBT 600V 20A 163W TO220 [See More]

• Packing Method: Tube; Tube

IGBT 1200V 30A 150W TO247AD [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: N-Channel; N-CHANNEL
• I_C(max): 30

IGBT 600V 10A 60W TO220SM [See More]

• Packing Method: Tube; Tube

IGBT 650V 10A TO220 [See More]

• Packing Method: Tube; Tube

IGBT 1200V 40A 288W TO247 [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: N-Channel; N-CHANNEL
• I_C(max): 40

IGBT 600V 30A 170W TO3PN [See More]

• Packing Method: Tube; Tube

IGBT 600V 20A 42W TO220F [See More]

• Packing Method: Tube; Tube

IGBT 1200V 46A 313W TO247-3 [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: N-Channel; N-CHANNEL
• T_J: -55 to 150

PB-F IGBT / TRANSISTOR TO-3PN IC [See More]

• Packing Method: Tube; Tube

IGBT MOD 650V 165A 430W ISOTOP [See More]

• Packing Method: Tube; Tube

IGBT 1200V 60A 300W TO247AD [See More]

• Packing Method: Tube; Tube
• I_C(max): 60

• V_CE(on): 2.28
• t_r: 25

IGBT TRENCH [See More]

• Packing Method: Tube; Tube

IGBT 1200V 245A 960W TMAX [See More]

• Packing Method: Tube; Tube

• T_J: -55 to 150

IGBT 1200V 60A 300W TO247AD [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: N-Channel; N-CHANNEL
• V_CE(on): 2.4

INDUSTRY 14 PG-HSIP247-3 [See More]

• Packing Method: Tube; Tube

IGBT 600V 229A 625W TO264 [See More]

• Packing Method: Tube; Tube

• T_J: -55 to 175

IGBT 1200V 70A 320W TO247AC [See More]

• Packing Method: Tube; Tube
• V_CE(on): 2.4

• Polarity: N-Channel; N-CHANNEL
• I_C(max): 70

INDUSTRY 14 [See More]

• Packing Method: Tube; Tube

IGBT 1200V 25A 156W TO247 [See More]

• Packing Method: Tube; Tube

• T_J: -55 to 150

IGBT 1200V 80A 555W TO247-3 [See More]

• Packing Method: Tube; Tube
• V_CE(on): 1.8

• Polarity: N-Channel; N-CHANNEL
• I_C(max): 80

INDUSTRY 14 [See More]

• Packing Method: Tube; Tube

IGBT 1200V 25A 156W TO220 [See More]

• Packing Method: Tube; Tube

• T_J: -55 to 150

IGBT 300V 170A 330W TO3P [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: N-Channel; N-CHANNEL
• I_C(max): 170

INDUSTRY 14 [See More]

• Packing Method: Tube; Tube

IGBT NPT COMBI 1200V 20A TO-247 [See More]

• Packing Method: Tube; Tube

IGBT 300V 400A TO264AA [See More]

• Packing Method: Tube; Tube

• I_C(max): 400

INDUSTRY 14 [See More]

• Packing Method: Tube; Tube

IGBT FIELDSTOP COMBI 600V 20A TO [See More]

• Packing Method: Tube; Tube

IGBT 400V [See More]

• Packing Method: Tube; Tube
• T_J: -40 to 150

• P_D: 1800

INDUSTRY 14 [See More]

• Packing Method: Tube; Tube

IGBT 1200V 88A 500W D3PAK [See More]

• Packing Method: Tube; Tube

IGBT 400V 45W IPAK [See More]

• Packing Method: Tube; Tube
• P_D: 45000

• V_CE(on): 4.5
• T_J: -40 to 150

IGBT TRENCH [See More]

• Packing Method: Tube; Tube

IGBT MODULE 900V 87A 284W ISOTOP [See More]

• Packing Method: Tube; Tube

IGBT 4500V 30A TO-247HV [See More]

• Packing Method: Tube; Tube

• T_J: -55 to 150

IGBT TRENCH [See More]

• Packing Method: Tube; Tube

• Package Type: 210 A

IGBT 600V 87A 283W SOT-227 [See More]

• Packing Method: Tube; Tube

IGBT 600V 10A 25W TP220FP [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: N-Channel; N-CHANNEL
• V_CE(on): 1.45

INDUSTRY 14 [See More]

• Packing Method: Tube; Tube

IGBT FIELDSTOP COMBI 600V 50A TO [See More]

• Packing Method: Tube; Tube

IGBT 600V 110A 284W TO247 [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: N-Channel; N-CHANNEL
• V_CE(on): 1.15

CIPOS MICRO [See More]

• Packing Method: Tube; Tube

IGBT MOD 600V 130A 431W ISOTOP [See More]

• Packing Method: Tube; Tube

IGBT 600V 13A 60W D2PAK [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: N-Channel; N-CHANNEL
• V_CE(on): 2.6

CIPOS MICRO [See More]

• Packing Method: Tube; Tube

IGBT 1200V 200A 833W TO264 [See More]

• Packing Method: Tube; Tube

• T_J: -55 to 150

IGBT 600V 13A 60W TO220 [See More]

• Packing Method: Tube; Tube
• I_C(max): 13

• V_CE(on): 2.1
• P_D: 60000

IGBT 600V 19A 60W TO220-3 [See More]

• Packing Method: Tube; Tube

IGBT MODULE 600V 430A 1150W SP6 [See More]

• Packing Method: Tube; Tube

IGBT 600V 14A 38W DPAK [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: N-Channel; N-CHANNEL
• V_CE(on): 1.7

IGBT 1200V ULTRA FAST TO247 [See More]

• Packing Method: Tube; Tube