TO-3 Insulated Gate Bipolar Transistors (IGBT)

IGBT NPT and Trench 1200V 30A 212W Through Hole TO-3PN [See More]

• Package Type: TO-3; TO-3P-3, SC-65-3
• Packing Method: Tube

• T_J: -55 to 150
• Structure: NPT; NPT and Trench

Win Source Part Number: 1003359-FGA40T65UQDF. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Bulk. Standard Package: 1. Power - Max: 231 W. Reverse Recovery Time (trr): 89 ns. IGBT Type: NPT. Voltage - Collector Emitter Breakdown (Max): 650 V. Current -... [See More]

• Package Type: TO-3; SOT3
• T_J: -55 to 175

• V_CES: 650

GenX3 ™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3 ™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new... [See More]

• Package Type: TO-3; TO-3P
• V_CE(on): 3.4

• V_CES: 1200
• I_C(max): 40

IGBT NPT/TRENCH 1200V 50A TO3P [See More]

• Package Type: TO-3; TO-3P-3, SC-65-3
• Packing Method: Tube; Tube

• T_J: -55 to 150
• Structure: NPT; NPT and Trench

280W 40A 600V TO-3PN IGBTs ROHS [See More]

• Package Type: TO-3
• P_D: 280000

• V_CES: 600

FGA180N33ATD - IGBT-Single 330V 180A 390W (Tc) TO-3P-3 Tube [See More]

• Package Type: TO-3; TO-3PN-3

• Packing Method: Tube; Tube

IGBT 600V 59A 230W Through Hole TO-3P(N) [See More]

• Package Type: TO-3; TO-3P-3, SC-65-3
• Packing Method: Tray

• T_J: 175

Win Source Part Number: 1013901-FGA40T65SHDF. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Bulk. Standard Package: 1. Power - Max: 268 W. Reverse Recovery Time (trr): 101 ns. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown (Max): 650 V. [See More]

• Package Type: TO-3; SOT3
• T_J: -55 to 175

• V_CES: 650

Manufactured through the state-of-the-art GenX3 ™ IGBT process and an extreme-light Punch Through (XPT ™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive... [See More]

• Package Type: TO-3; TO-3PM
• V_CE(on): 1.85

• V_CES: 600
• I_C(max): 33

IGBT FIELD STOP 650V 80A TO3PN [See More]

• Package Type: TO-3; TO-3P-3, SC-65-3
• Packing Method: Tube; Tube

• T_J: -55 to 175
• Structure: Field Stop

250W 40A 650V TO-3PN IGBTs ROHS [See More]

• Package Type: TO-3
• P_D: 250000

• V_CES: 650

IGBT, 650V, 40A, Field Stop [See More]

• Package Type: TO-3; TO-3P-3, SC-65-3

• Packing Method: Tube; Tube

PB-F IGBT / TRANSISTOR TO-3PN IC [See More]

• Package Type: TO-3; TO-3P-3, SC-65-3
• Packing Method: Tray

• T_J: 150

Win Source Part Number: 1017563-FGA30T65SHD. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Bulk. Standard Package: 1. Power - Max: 238 W. Reverse Recovery Time (trr): 31.8 ns. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown (Max): 650 V. [See More]

• Package Type: TO-3; SOT3
• T_J: -55 to 175

• V_CES: 650

IGBT FIELD STOP 650V 120A TO3P [See More]

• Package Type: TO-3; TO-3P-3, SC-65-3
• Packing Method: Tube; Tube

• T_J: -55 to 175
• Structure: Field Stop

TO-3P-3 IGBTs ROHS [See More]

• Package Type: TO-3

IGBT 600V 35A 79W Through Hole TO-3P [See More]

• Package Type: TO-3; TO-3P-3 Full Pack
• Packing Method: Tube

• T_J: -55 to 150

Win Source Part Number: 1022088-FGA3060ADF. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Bulk. Standard Package: 1. Power - Max: 176 W. Reverse Recovery Time (trr): 26 ns. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown (Max): 600 V. [See More]

• Package Type: TO-3; SOT3
• T_J: -55 to 175

• V_CES: 600

IGBT FIELD STOP 600V 40A TO3PF [See More]

• Package Type: TO-3; TO-3P-3 Full Pack
• Packing Method: Tube; Tube

• T_J: -55 to 175
• Structure: Field Stop

TO-3P-3 IGBTs ROHS [See More]

• Package Type: TO-3

IGBT 600V 36A 80W Through Hole TO-3PF [See More]

• Package Type: TO-3; TO-3P-3 Full Pack
• Packing Method: Tube

• T_J: -55 to 150

Win Source Part Number: 1026432-STGWT80V60DF. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 30. Power - Max: 469 W. Reverse Recovery Time (trr): 60 ns. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown (Max): 600 V. [See More]

• Package Type: TO-3; SOT3
• T_J: -55 to 175

• V_CES: 600

IGBT FIELD STOP 600V 80A TO3PF [See More]

• Package Type: TO-3; TO-3P-3 Full Pack
• Packing Method: Tube; Tube

• T_J: -55 to 175
• Structure: Field Stop

TO-3PN IGBTs ROHS [See More]

• Package Type: TO-3

IGBT 600V 36A 88W Through Hole TO-3PF [See More]

• Package Type: TO-3; TO-3P-3 Full Pack
• Packing Method: Tube

• T_J: -55 to 150

Win Source Part Number: 1030445-FGA90N30DTU. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 30. Power - Max: 219 W. Reverse Recovery Time (trr): 21 ns. Voltage - Collector Emitter Breakdown (Max): 300 V. Current - Collector (Ic) (Max): 90... [See More]

• Package Type: TO-3; SOT3
• T_J: -55 to 150

• V_CES: 300

IGBT 600V 45A 140W TO3P [See More]

• Package Type: TO-3; TO-3P-3, SC-65-3
• Packing Method: Tube; Tube

• T_J: 150
• Structure: Trench

TO-3P IGBTs ROHS [See More]

• Package Type: TO-3

IGBT Trench Field Stop 600V 40A 52W Through Hole TO-3PF [See More]

• Package Type: TO-3; TO-3P-3 Full Pack
• Packing Method: Tube

• T_J: -55 to 175
• Structure: Trench Field Stop

Win Source Part Number: 1060981-GPA020A120MN-FD. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 1. Power - Max: 223 W. Reverse Recovery Time (trr): 425 ns. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown (Max): 1200 V. [See More]

• Package Type: TO-3; SOT3
• T_J: -55 to 150

• V_CES: 1200

IGBT 600V 75A 200W TO3P [See More]

• Package Type: TO-3; TO-3P-3, SC-65-3
• Packing Method: Tube; Tube

• T_J: 150
• Structure: Trench

TO-3P-3 IGBTs ROHS [See More]

• Package Type: TO-3

IGBT Trench Field Stop 650V 39A 85W Through Hole TO-3PFM [See More]

• Package Type: TO-3; TO-3PFM, SC-93-3
• Packing Method: Tube

• T_J: -40 to 175
• Structure: Trench Field Stop

Win Source Part Number: 1060982-GPA020A135MN-FD. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 1. Power - Max: 223 W. Reverse Recovery Time (trr): 425 ns. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown (Max): 1350 V. [See More]

• Package Type: TO-3; SOT3
• T_J: -55 to 150

• V_CES: 1350

IGBT 600V 50A 201.6W TO-3P [See More]

• Package Type: TO-3; TO-3P-3, SC-65-3
• Packing Method: Tube; Tube

• T_J: 150
• Structure: Trench

TO-3P-3 IGBTs ROHS [See More]

• Package Type: TO-3

IGBT Trench Field Stop 650V 27A 61W Through Hole TO-3PFM [See More]

• Package Type: TO-3; TO-3PFM, SC-93-3
• Packing Method: Tube

• T_J: -40 to 175
• Structure: Trench Field Stop

Win Source Part Number: 1061320-GT30J121(Q). Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 50. Power - Max: 170 W. Voltage - Collector Emitter Breakdown (Max): 600 V. Current - Collector (Ic) (Max): 30 A. Current - Collector Pulsed... [See More]

• Package Type: TO-3; SOT3

• V_CES: 600

IGBT 600V 60A 235.8W TO-3P [See More]

• Package Type: TO-3; TO-3P-3, SC-65-3
• Packing Method: Tube; Tube

• T_J: 150
• Structure: Trench

TO-3P-3 IGBTs ROHS [See More]

• Package Type: TO-3

IGBT Trench Field Stop 1200V 30A 220W Through Hole TO-3P [See More]

• Package Type: TO-3; TO-3P-3, SC-65-3
• Packing Method: Tube

• T_J: -55 to 150
• Structure: Trench Field Stop

Win Source Part Number: 1066191-IXGQ96N30TCD1. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 30. IGBT Type: Trench. Voltage - Collector Emitter Breakdown (Max): 320 V. Current - Collector (Ic) (Max): 96 A. Input Type: Standard. Mounting... [See More]

• Package Type: TO-3; SOT3

• V_CES: 320

IGBT 650V 80A 283W TO3P-3L [See More]

• Package Type: TO-3; TO-3P-3, SC-65-3
• Packing Method: Tube; Tube

• T_J: -55 to 175
• Structure: Trench Field Stop

TO-3P-3 IGBTs ROHS [See More]

• Package Type: TO-3

IGBT Field Stop 650V 120A 600W Through Hole TO-3P [See More]

• Package Type: TO-3; TO-3P-3, SC-65-3
• Packing Method: Tube

• T_J: -55 to 175
• Structure: Field Stop

Win Source Part Number: 1088444-RJH60D5DPK-00#T0. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 1. Power - Max: 200 W. Reverse Recovery Time (trr): 100 ns. IGBT Type: Trench. Voltage - Collector Emitter Breakdown (Max): 600 V. Current -... [See More]

• Package Type: TO-3; SOT3
• T_J: 150

• V_CES: 600

IGBT 650V 80A 375W TO3P-3L [See More]

• Package Type: TO-3; TO-3P-3, SC-65-3
• Packing Method: Tube; Tube

• T_J: -55 to 175
• Structure: Trench Field Stop

TO-3P-3 IGBTs ROHS [See More]

• Package Type: TO-3

IGBT Field Stop 600V 40A 75W Through Hole TO-3PF [See More]

• Package Type: TO-3; TO-3P-3 Full Pack
• Packing Method: Tube

• T_J: -55 to 175
• Structure: Field Stop

Win Source Part Number: 1108222-STGWT30HP65FB. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Series: HB. Package: Tube. Standard Package: 600. Power - Max: 260 W. Reverse Recovery Time (trr): 140 ns. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown... [See More]

• Package Type: TO-3; SOT3
• T_J: -55 to 175

• V_CES: 650

IGBT 650V 80A 375W TO3P-3L [See More]

• Package Type: TO-3; TO-3P-3, SC-65-3
• Packing Method: Tube; Tube

• T_J: -55 to 175
• Structure: Trench Field Stop

IGBT Field Stop 600V 80A 115W Through Hole TO-3PF [See More]

• Package Type: TO-3; TO-3P-3 Full Pack
• Packing Method: Tube

• T_J: -55 to 175
• Structure: Field Stop

Win Source Part Number: 1165684-RJH65T04BDPM-A0#T2. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 25. Power - Max: 65 W. Reverse Recovery Time (trr): 80 ns. IGBT Type: Trench. Voltage - Collector Emitter Breakdown (Max): 650 V. Current -... [See More]

• Package Type: TO-3; SOT3
• T_J: 175

• V_CES: 650

IGBT Trench Field Stop 650V 80A 94W Through Hole TO-3PF-3 [See More]

• Package Type: TO-3; TO-3P-3 Full Pack
• Packing Method: Tube

• T_J: -55 to 175
• Structure: Trench Field Stop

Win Source Part Number: 1187678-FGA5065ADF. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Bulk. Standard Package: 1. Power - Max: 268 W. Reverse Recovery Time (trr): 31.8 ns. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown (Max): 650 V. [See More]

• Package Type: TO-3; SOT3
• T_J: -55 to 175

• V_CES: 650

IGBT 600V 30A 60W Through Hole TO-3PF [See More]

• Package Type: TO-3; TO-3P-3 Full Pack

• Packing Method: Bulk

Win Source Part Number: 1194425-STGWT20H65FB. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 30. Power - Max: 168 W. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown (Max): 650 V. Current - Collector (Ic) (Max): 40 A. [See More]

• Package Type: TO-3; SOT3
• T_J: -55 to 175

• V_CES: 650

IGBT NPT 600V 75A 390W Through Hole TO-247AD [See More]

• Package Type: TO-3; TO-247; TO-3P-3 Full Pack
• Packing Method: Tube

• T_J: -55 to 150
• Structure: NPT

Win Source Part Number: 1219067-STGWT30H65FB. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 30. Power - Max: 260 W. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown (Max): 650 V. Current - Collector (Ic) (Max): 30 A. [See More]

• Package Type: TO-3; SOT3
• T_J: -55 to 175

• V_CES: 650

IGBT 300V 170A 330W Through Hole TO-3P [See More]

• Package Type: TO-3; TO-3P-3, SC-65-3
• Packing Method: Tube

• T_J: -55 to 150

Manufacturer: Sanken. Win Source Part Number: 1324185-FGM622S. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Packaging: Tube. Standard Package: 1,080. Mounting: Surface Mount. Power - Max: 60 W. Voltage - Collector Emitter Breakdown (Max): 600 V. Current - Collector... [See More]

• Package Type: TO-3; SOT3; TO-3P-3 Full Pack
• T_J: 150

• V_CES: 600
• Packing Method: Tube; Tube

IGBT Trench 1200V 50A 245W Through Hole TO-3P [See More]

• Package Type: TO-3; TO-3P-3, SC-65-3
• Packing Method: Tube

• T_J: 150
• Structure: Trench

Win Source Part Number: 974565-RJH60D0DPM-00#T1. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 1. Power - Max: 40 W. Reverse Recovery Time (trr): 100 ns. IGBT Type: Trench. Voltage - Collector Emitter Breakdown (Max): 600 V. Current -... [See More]

• Package Type: TO-3; SOT3
• T_J: 150

• V_CES: 600

Win Source Part Number: 987125-IXGQ180N33TCD1. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 30. Voltage - Collector Emitter Breakdown (Max): 330 V. Current - Collector (Ic) (Max): 180 A. Input Type: Standard. Mounting Type: Through... [See More]

• Package Type: TO-3; SOT3

• V_CES: 330

Win Source Part Number: 998593-STGWT20V60DF. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 30. Power - Max: 167 W. Reverse Recovery Time (trr): 40 ns. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown (Max): 600 V. [See More]

• Package Type: TO-3; SOT3
• T_J: -55 to 175

• V_CES: 600

Manufacturer: IXYS. Win Source Part Number: 1191202-IXGM40N60A. Mounting Style: Chassis Mount. Configuration: Single. Input: Standard. NTC Thermistor: No. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-204. Status: Obsolete. Temperature Range - Operating: -55 °C ~ 150... [See More]

• Package Type: TO-3; SOT3
• T_J: -55 to 150

• V_CES: 600

Manufacturer: Fairchild/ON Semiconductor. Win Source Part Number: 774527-FGA120N30DTU. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-3P-3, SC-65-3. Power - Max: 290W. Reverse Recovery Time (trr): 21ns. Current - Collector... [See More]

• Package Type: TO-3; SOT3
• T_J: -55 to 150

• V_CES: 300
• Packing Method: Tube; Tube

Manufacturer: Fairchild/ON Semiconductor. Win Source Part Number: 1038626-FGA15N120ANDTU. Packaging: Tube/Rail. Mounting: Through Hole. Reverse Recovery Time (trr): 330ns. IGBT Type: NPT. Input Type: Standard. Gate Charge: 120nC. Categories: Discrete Semiconductor Products. Status: Obsolete(EOL). [See More]

• Package Type: TO-3; SOT3; TO-3PN
• P_D: 200000

• V_CE(on): 3.2
• T_J: -55 to 150

Manufacturer: Fairchild/ON Semiconductor. Win Source Part Number: 001159-FGA15N120ANTDTU_F109. Packaging: Tube/Rail. Mounting: Through Hole. Reverse Recovery Time (trr): 330ns. IGBT Type: NPT and Trench. Input Type: Standard. Gate Charge: 120nC. Categories: Discrete Semiconductor Products. Status:... [See More]

• Package Type: TO-3; SOT3; TO-3P
• P_D: 186000

• V_CE(on): 2.4
• T_J: -55 to 150

Manufacturer: Fairchild/ON Semiconductor. Win Source Part Number: 204166-FGA15N120FTDTU. Packaging: Tube/Rail. Mounting: Through Hole. Reverse Recovery Time (trr): 575ns. IGBT Type: Trench Field Stop. Input Type: Standard. Gate Charge: 100nC. Categories: Discrete Semiconductor Products. Status:... [See More]

• Package Type: TO-3; SOT3; TO-3PN
• P_D: 220000

• V_CE(on): 2
• T_J: -55 to 150

SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This... [See More]

• Package Type: TO-3; TO-3
• V_CE(on): 2

• Polarity: N-Channel
• P_D: 195000